CN110854300B - Display device, display panel and manufacturing method thereof - Google Patents
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本公开是关于显示技术领域,涉及一种显示面板、显示面板的制造方法与显示装置,该显示面板包括:衬底、显示层和封装层,显示层设于所述衬底的一侧,封装层设于所述显示层远离所述衬底的一侧,所述封装层为金属材料,所述金属层的表面上形成有疏水的微纳结构。本公开提供的显示面板,封装层具有超疏水性,能够有效阻挡水汽渗入到显示面板内部,从而改善显示面板的封装效果,延长显示面板寿命。
The present disclosure relates to the field of display technology, and relates to a display panel, a method for manufacturing a display panel, and a display device. The display panel includes: a substrate, a display layer, and an encapsulation layer. The display layer is arranged on one side of the substrate, and the encapsulation layer is arranged on a side of the display layer away from the substrate. The encapsulation layer is a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal layer. The display panel provided by the present disclosure has an encapsulation layer with super-hydrophobicity, which can effectively prevent water vapor from penetrating into the interior of the display panel, thereby improving the encapsulation effect of the display panel and extending the life of the display panel.
Description
技术领域Technical Field
本公开涉及显示技术领域,具体而言,涉及一种显示面板、显示面板的制造方法与显示装置。The present disclosure relates to the field of display technology, and in particular, to a display panel, a method for manufacturing a display panel, and a display device.
背景技术Background Art
有机发光二极管(Organic Light-Emitting Diode,OLED)显示装置由于具有薄、轻、宽视角、主动发光、发光颜色连续可调、成本低、响应速度快、能耗小、驱动电压低、工作温度范围宽、生产工艺简单、发光效率高及可柔性显示等优点,已被列为极具发展前景的下一代显示技术。Organic Light-Emitting Diode (OLED) display devices have been listed as the next generation display technology with great development prospects due to their advantages such as thinness, lightness, wide viewing angle, active light emission, continuously adjustable light emission color, low cost, fast response speed, low energy consumption, low driving voltage, wide operating temperature range, simple production process, high light emission efficiency and flexible display.
OLED器件对水汽和氧气等外界因素非常敏感,例如一旦发生氧化反应,OLED器件的稳定性就会变差并且寿命会大幅度降低,因此采用有效的封装结构阻止水汽、氧气侵入,可以延长OLED器件的使用寿命。OLED devices are very sensitive to external factors such as water vapor and oxygen. For example, once an oxidation reaction occurs, the stability of the OLED device will deteriorate and its life will be greatly reduced. Therefore, using an effective packaging structure to prevent the intrusion of water vapor and oxygen can extend the service life of the OLED device.
需要说明的是,在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解,因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field.
发明内容Summary of the invention
本公开的目的在于提供一种显示面板、显示面板的制造方法与显示装置,能够有效阻挡水汽渗入到显示面板内部,从而改善显示面板的封装效果,延长显示面板寿命。The purpose of the present disclosure is to provide a display panel, a method for manufacturing a display panel and a display device, which can effectively prevent water vapor from penetrating into the interior of the display panel, thereby improving the packaging effect of the display panel and extending the life of the display panel.
根据本公开的一个方面,提供了一种显示面板,该显示面板包括:According to one aspect of the present disclosure, there is provided a display panel, the display panel comprising:
衬底;substrate;
显示层,设于所述衬底的一侧;A display layer, disposed on one side of the substrate;
封装层,设于所述显示层远离所述衬底的一侧,所述封装层为金属材料,所述金属层的表面上形成有疏水的微纳结构。The encapsulation layer is arranged on a side of the display layer away from the substrate. The encapsulation layer is made of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal layer.
在本公开的一种示例性实施例中,所述微纳结构包括从所述封装层表面上延伸出的多个微纳柱。In an exemplary embodiment of the present disclosure, the micro-nano structure includes a plurality of micro-nano pillars extending from the surface of the encapsulation layer.
在本公开的一种示例性实施例中,所述微纳柱的直径为10nm~1000nm。In an exemplary embodiment of the present disclosure, the diameter of the micro-nano column is 10 nm to 1000 nm.
在本公开的一种示例性实施例中,所述微纳柱的高度为10nm~1000nm。In an exemplary embodiment of the present disclosure, the height of the micro-nano column is 10 nm to 1000 nm.
在本公开的一种示例性实施例中,相邻的两个所述微纳柱之间的中心距为10nm~500nm。In an exemplary embodiment of the present disclosure, the center distance between two adjacent micro-nano pillars is 10 nm to 500 nm.
在本公开的一种示例性实施例中,所述微纳结构与水汽的浸润角度为110°~160°。In an exemplary embodiment of the present disclosure, the wetting angle between the micro-nano structure and water vapor is 110° to 160°.
在本公开的一种示例性实施例中,所述封装层的层厚为150nm~1000nm。In an exemplary embodiment of the present disclosure, the encapsulation layer has a thickness of 150 nm to 1000 nm.
在本公开的一种示例性实施例中,所述封装层的材料包括铝、钕、铜、银中的至少一种。In an exemplary embodiment of the present disclosure, the material of the encapsulation layer includes at least one of aluminum, neodymium, copper and silver.
根据本公开的另一个方面,提供了一种显示面板的制造方法,该制造方法包括:According to another aspect of the present disclosure, a method for manufacturing a display panel is provided, the method comprising:
提供一衬底;providing a substrate;
在所述衬底的一侧形成显示层;forming a display layer on one side of the substrate;
在所述显示层远离所述衬底的一侧形成封装层,所述封装层为金属材料;forming an encapsulation layer on a side of the display layer away from the substrate, wherein the encapsulation layer is made of a metal material;
在所述封装层的表面上形成疏水的微纳结构。A hydrophobic micro-nano structure is formed on the surface of the encapsulation layer.
根据本公开的又一个方面,提供了一种显示装置,该显示装置包括上述的显示面板。According to yet another aspect of the present disclosure, a display device is provided, comprising the above-mentioned display panel.
本公开提供的显示面板,封装层采用金属材料形成,金属材料的表面上形成有疏水的微纳结构,表面具有微纳结构的封装层即起到封装的作用,又可以有效阻挡水汽渗入到显示器件内部,从而改善器件封装效果,延长器件寿命。The display panel provided by the present disclosure has an encapsulation layer formed of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal material. The encapsulation layer with the micro-nano structure on the surface not only plays a role of encapsulation, but also can effectively prevent water vapor from penetrating into the interior of the display device, thereby improving the device packaging effect and extending the device life.
应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本公开。It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.
图1为本公开的一种实施例提供的显示面板的剖面示意图;FIG1 is a cross-sectional schematic diagram of a display panel provided by an embodiment of the present disclosure;
图2为本公开的一种实施例提供的显示面板的制造方法的流程图。FIG. 2 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present disclosure.
具体实施方式DETAILED DESCRIPTION
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的范例;相反,提供这些实施方式使得本公开将更加全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中,提供许多具体细节从而给出对本公开的实施方式的充分理解。然而,本领域技术人员将意识到,可以实践本公开的技术方案而省略所述特定细节中的一个或更多,或者可以采用其它的方法、步骤等。在其它情况下,不详细示出或描述公知技术方案以避免喧宾夺主而使得本公开的各方面变得模糊。Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as being limited to the examples set forth herein; on the contrary, these embodiments are provided so that the present disclosure will be more comprehensive and complete, and the concepts of the example embodiments are fully conveyed to those skilled in the art. The described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced while omitting one or more of the specific details, or other methods, steps, etc. may be adopted. In other cases, known technical solutions are not shown or described in detail to avoid obscuring various aspects of the present disclosure.
用语“一个”、“一”、“该”和“所述”用以表示存在一个或多个要素/组成部分/等;用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等;用语“第一”、“第二”等仅作为标记使用,不是对其对象的数量限制。The terms "a", "an", "the" and "said" are used to indicate the presence of one or more elements/components/etc.; the terms "including" and "having" are used to express an open-ended inclusive meaning and mean that additional elements/components/etc. may exist in addition to the listed elements/components/etc.; the terms "first", "second", etc. are used merely as labels and are not intended to limit the quantity of their objects.
本示例实施方式中首先提供了一种显示面板,如图1所示,该显示面板包括:衬底10、显示层30和封装层60,显示层30设于衬底10的一侧,封装层60设于显示层30远离衬底10的一侧,封装层60为金属材料,金属层的表面上形成有疏水的微纳结构,疏水的微纳结构可为封装层60上具有疏水特性的凹凸不平的表面。In this example implementation, a display panel is first provided, as shown in FIG1 , the display panel includes: a substrate 10, a display layer 30 and an encapsulation layer 60, the display layer 30 is arranged on one side of the substrate 10, the encapsulation layer 60 is arranged on the side of the display layer 30 away from the substrate 10, the encapsulation layer 60 is a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal layer, and the hydrophobic micro-nano structure can be an uneven surface with hydrophobic properties on the encapsulation layer 60.
本公开提供的显示面板,封装层采用金属材料形成,金属材料的表面上形成有疏水的微纳结构,表面具有微纳结构的封装层即起到封装的作用,又可以有效阻挡水汽渗入到显示器件内部,从而改善器件封装效果,延长器件寿命。The display panel provided by the present disclosure has an encapsulation layer formed of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal material. The encapsulation layer with the micro-nano structure on the surface not only plays a role of encapsulation, but also can effectively prevent water vapor from penetrating into the interior of the display device, thereby improving the device packaging effect and extending the device life.
具体地,通过在封装层60的表面上形成具有超疏水性质的凹凸不平的微纳结构,使得封装层60的表面形成一纳米级的极薄空气层,当外部水分接触到封装层60时,由于隔着空气层,因此可以减少水分与封装层60的直接接触,从而提升封装层的水氧阻隔能力。Specifically, by forming an uneven micro-nano structure with super-hydrophobic properties on the surface of the encapsulation layer 60, an extremely thin air layer at the nanometer level is formed on the surface of the encapsulation layer 60. When external moisture contacts the encapsulation layer 60, the air layer is separated, so the direct contact between the moisture and the encapsulation layer 60 can be reduced, thereby improving the water-oxygen barrier capacity of the encapsulation layer.
如图1所示,微纳结构包括从封装层60的表面上延伸出的多个微纳柱。其中,微纳柱直径为10nm~1000nm,例如10nm、100nm、200nm、500nm、700nm、1000nm等,在此不一一列举;微纳柱的高度为10nm~1000nm,例如10nm、100nm、200nm、500nm、700nm、1000nm等,在此不一一列举;相邻的两个微纳柱之间的中心距为10nm~500nm,例如10nm、100nm、200nm、300nm、400nm、500nm等,在此不一一列举。当然,微纳柱直径也可小于10nm或大于1000nm,微纳柱的高度也可小于10nm或大于1000nm,相邻的两个微纳柱之间的中心距也可小于10nm或大于500nm,本公开对此不做限制。As shown in Fig. 1, the micro-nano structure includes a plurality of micro-nano pillars extending from the surface of the encapsulation layer 60. The diameter of the micro-nano pillars is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed here; the height of the micro-nano pillars is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed here; the center distance between two adjacent micro-nano pillars is 10nm to 500nm, such as 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, etc., which are not listed here. Of course, the diameter of the micro-nano column may be less than 10nm or greater than 1000nm, the height of the micro-nano column may be less than 10nm or greater than 1000nm, and the center distance between two adjacent micro-nano columns may be less than 10nm or greater than 500nm. The present disclosure does not impose any restrictions on this.
此外,微纳结构可包括从封装层60的表面上延伸出的多个三角形、半球形、梯形或其它不规则的纳米级的微纳结构,本公开对此不做限制,凡是微纳结构上的变换,均属于本公开的保护范围。In addition, the micro-nano structure may include a plurality of triangular, hemispherical, trapezoidal or other irregular nanoscale micro-nano structures extending from the surface of the encapsulation layer 60, and the present disclosure does not limit this, and all changes in the micro-nano structure fall within the protection scope of the present disclosure.
具体地,封装层60的层厚为150nm~1000nm,以保证微纳结构的形成。封装层60的层厚例如可为150nm、200nm、400nm、500nm、700nm、1000nm等,在此不一一列举,当然,封装层60的层厚也可小于150nm或大于500nm,本公开对此不做限制。Specifically, the thickness of the encapsulation layer 60 is 150 nm to 1000 nm to ensure the formation of the micro-nano structure. The thickness of the encapsulation layer 60 can be, for example, 150 nm, 200 nm, 400 nm, 500 nm, 700 nm, 1000 nm, etc., which are not listed here one by one. Of course, the thickness of the encapsulation layer 60 can also be less than 150 nm or greater than 500 nm, which is not limited in the present disclosure.
具体地,微纳结构与水汽的浸润角度为110°~160°,以保证封装层60白表面的微纳结构具备较好的疏水性。微纳结构与水汽的浸润角度例如可为110°、120°、130°、140°、150°、160°等,在此不一一列举。当然,微纳结构与水汽的浸润角度也可小于110°或大于160°,本公开对此不做限制。Specifically, the wetting angle between the micro-nano structure and the water vapor is 110° to 160° to ensure that the micro-nano structure on the surface of the encapsulation layer 60 has good hydrophobicity. The wetting angle between the micro-nano structure and the water vapor can be, for example, 110°, 120°, 130°, 140°, 150°, 160°, etc., which are not listed here. Of course, the wetting angle between the micro-nano structure and the water vapor can also be less than 110° or greater than 160°, and the present disclosure does not limit this.
其中,封装层60的材料包括铝、钕、铜、银中的至少一种。选取上述金属材料形成封装层60,便于在封装层60的表面形成微纳结构。当然,还可以为其它金属材料,例如锌,本公开对此不做限制。The material of the encapsulation layer 60 includes at least one of aluminum, neodymium, copper, and silver. The above metal materials are selected to form the encapsulation layer 60, so as to facilitate the formation of micro-nano structures on the surface of the encapsulation layer 60. Of course, other metal materials, such as zinc, may also be used, and the present disclosure does not limit this.
具体地,衬底10可以为无机材料的衬底,也可以为有机材料的衬底。举例而言,在本公开的一种实施方式中,衬底10的材料可以为钠钙玻璃(soda-lime glass)、石英玻璃、蓝宝石玻璃等玻璃材料,或者可以为不锈钢、铝、镍等金属材料。在本公开的另一种实施方式中,衬底10的材料可以为聚甲基丙烯酸甲酯(Polymethyl methacrylate,PMMA)、聚乙烯醇(Polyvinyl alcohol,PVA)、聚乙烯基苯酚(Polyvinyl phenol,PVP)、聚醚砜(Polyethersulfone,PES)、聚酰亚胺、聚酰胺、聚缩醛、聚碳酸酯(Poly carbonate,PC)、聚对苯二甲酸乙二酯(Polyethylene terephthalate,PET)、聚萘二甲酸乙二酯(Polyethylenenaphthalate,PEN)或其组合。在本公开的另一种实施方式中,衬底10也可以为柔性衬底,例如衬底的材料可以为聚酰亚胺(polyimide,PI)。Specifically, the substrate 10 may be a substrate of an inorganic material or a substrate of an organic material. For example, in one embodiment of the present disclosure, the material of the substrate 10 may be a glass material such as soda-lime glass, quartz glass, sapphire glass, or may be a metal material such as stainless steel, aluminum, nickel, etc. In another embodiment of the present disclosure, the material of the substrate 10 may be polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyethersulfone (PES), polyimide, polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN) or a combination thereof. In another embodiment of the present disclosure, the substrate 10 may also be a flexible substrate, for example, the material of the substrate may be polyimide (PI).
具体地,显示层30用于实现图案显示,在显示层30中,显示单元可以为有机发光二极管(OLED)、液晶显示单元、发光二极管(LED)或者其他可行的可显示单元。可以理解的是,显示单元可以实现自主发光,例如有机发光二极管或者发光二极管,也可以借助背光源并实现发光控制,例如液晶显示单元可以控制背光源的光线是否通过发光区域而实现显示。Specifically, the display layer 30 is used to realize pattern display. In the display layer 30, the display unit can be an organic light emitting diode (OLED), a liquid crystal display unit, a light emitting diode (LED) or other feasible display units. It is understandable that the display unit can realize autonomous light emission, such as an organic light emitting diode or a light emitting diode, or can realize light emission control with the help of a backlight source, such as a liquid crystal display unit can control whether the light of the backlight source passes through the light emitting area to realize display.
进一步地,显示层30中还可以包括驱动层20,用于驱动各个发光单元40。驱动层20中可以包括薄膜晶体管和电容器,其中,薄膜晶体管可以为LTPS-TFT(低温多晶硅-薄膜晶体管)或者oxide-TFT(氧化物-薄膜晶体管),例如可以为IGZO-TFT(铟镓锌氧-薄膜晶体管),本公开对此不做限定。薄膜晶体管可以为顶栅型或者底栅型,本公开也不做限定。Further, the display layer 30 may further include a driving layer 20 for driving each light-emitting unit 40. The driving layer 20 may include a thin film transistor and a capacitor, wherein the thin film transistor may be an LTPS-TFT (low temperature polycrystalline silicon-thin film transistor) or an oxide-TFT (oxide-thin film transistor), for example, an IGZO-TFT (indium gallium zinc oxygen-thin film transistor), which is not limited in the present disclosure. The thin film transistor may be a top gate type or a bottom gate type, which is not limited in the present disclosure.
具体地,显示层30远离衬底10的一侧设有公共电极层50,公共电极层50可为公共阴极或公共阳极。其中,公共电极层50的材料可为金属材料举例来说,金属可以是铂、金、银、铝、铬、钡、钠、钯、铁、锰或其组合。也就是说,封装层60与公共电极层50可为相同的金属材料,可通过沉积工艺形成金属层作为公共电极层50与封装层60,可直接金属层的表面的形成微纳结构,以使金属层的上层区域作为封装层60。Specifically, a common electrode layer 50 is provided on the side of the display layer 30 away from the substrate 10, and the common electrode layer 50 may be a common cathode or a common anode. The material of the common electrode layer 50 may be a metal material. For example, the metal may be platinum, gold, silver, aluminum, chromium, barium, sodium, palladium, iron, manganese or a combination thereof. In other words, the encapsulation layer 60 and the common electrode layer 50 may be made of the same metal material, and a metal layer may be formed as the common electrode layer 50 and the encapsulation layer 60 through a deposition process, and a micro-nano structure may be directly formed on the surface of the metal layer so that the upper region of the metal layer serves as the encapsulation layer 60.
此外,显示面板还可包括设于封装层60远离衬底10一侧的钝化层和保护膜层,本公开对此不做限制。In addition, the display panel may further include a passivation layer and a protective film layer disposed on a side of the encapsulation layer 60 away from the substrate 10 , which is not limited in the present disclosure.
下述为本公开方法实施例,可以用于执行本公开装置实施例。对于本公开方法实施例中未披露的细节,请参照本公开装置实施例。The following are embodiments of the method disclosed herein, which can be used to implement the device embodiments disclosed herein. For details not disclosed in the method embodiments disclosed herein, please refer to the device embodiments disclosed herein.
本公开的实施例还提供了一种显示面板的制造方法,如图2所示,包括:The embodiment of the present disclosure further provides a method for manufacturing a display panel, as shown in FIG2 , comprising:
步骤S100、提供一衬底;Step S100, providing a substrate;
步骤S200、在衬底的一侧形成显示层;Step S200, forming a display layer on one side of the substrate;
步骤S300、在显示层远离衬底的一侧形成封装层,封装层为金属材料;Step S300, forming an encapsulation layer on a side of the display layer away from the substrate, wherein the encapsulation layer is made of a metal material;
步骤S400、在封装层的表面上形成疏水的微纳结构。Step S400: forming a hydrophobic micro-nano structure on the surface of the encapsulation layer.
本公开提供的显示面板,封装层采用金属材料形成,在金属材料的表面上形成有疏水的微纳结构,表面具有微纳结构的封装层即起到封装的作用,又可以有效阻挡水汽渗入到显示器件内部,从而改善器件封装效果,延长器件寿命。The display panel provided by the present disclosure has an encapsulation layer formed of a metal material, and a hydrophobic micro-nano structure is formed on the surface of the metal material. The encapsulation layer with the micro-nano structure on the surface not only plays a role of encapsulation, but also can effectively prevent water vapor from penetrating into the interior of the display device, thereby improving the device packaging effect and extending the device life.
下面,将对本示例实施方式中显示面板的制造方法的各步骤进行进一步的说明。Next, each step of the method for manufacturing the display panel in this exemplary embodiment will be further described.
在步骤S100中,提供一衬底。In step S100 , a substrate is provided.
具体地,如图1所示,可通过沉积等工艺形成衬底10,衬底10的材料可以是无机材料或有机材料,例如,无机材料可以是钠钙玻璃、石英玻璃、蓝宝石玻璃等玻璃材料,或是不锈钢、铝、镍等各种金属或其合金的金属材料;有机材料可以是聚甲基丙烯酸甲酯、聚乙烯醇、聚乙烯基苯酚、聚醚砜、聚酰亚胺、聚酰胺或其组合。其中,衬底10可为柔性衬底。Specifically, as shown in FIG1 , the substrate 10 can be formed by deposition or other processes, and the material of the substrate 10 can be an inorganic material or an organic material. For example, the inorganic material can be a glass material such as soda-lime glass, quartz glass, sapphire glass, or a metal material such as stainless steel, aluminum, nickel, or various metals or alloys thereof; the organic material can be polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polyamide, or a combination thereof. The substrate 10 can be a flexible substrate.
在步骤S200中,在衬底的一侧形成显示层。In step S200 , a display layer is formed on one side of a substrate.
具体地,在衬底10一侧可通过沉积、喷涂等工艺形成缓冲层,缓冲层的材料可以是氧化硅、氮氧化硅、氮化硅或上述材料的组合;接着在缓冲层上形成驱动层20,驱动层20包括多个薄膜晶体管。当然,也可在衬底10上直接形成驱动层20。驱动层20具体包括通过物理气相沉积法、化学气相沉积法、旋涂法或其组合形成于缓冲层上远离衬底10一侧的有源层,有源层部分覆盖缓冲层;在缓冲层远离衬底10的一侧通过物理气相沉积法、化学气相沉积法、旋涂法或其组合形成覆盖缓冲层与有源层的栅绝缘层,在栅绝缘层远离衬底10的一侧上通过沉积等工艺形成栅极层;接着在栅绝缘层上远离衬底10的一侧通过沉积等工艺形成覆盖栅绝缘层与栅极层的层间介质层;接在通过曝光显示、刻蚀等工艺在层间介质层、栅绝缘层上形成源漏极过孔,源极过孔与漏极过孔分别位于栅极层的两侧,且与有源层连通;接着在源极过孔与漏极过孔中通过沉积等工艺形成源极与漏极,从而形成薄膜晶体管。Specifically, a buffer layer can be formed on one side of the substrate 10 by deposition, spraying or other processes, and the material of the buffer layer can be silicon oxide, silicon oxynitride, silicon nitride or a combination of the above materials; then a driving layer 20 is formed on the buffer layer, and the driving layer 20 includes a plurality of thin film transistors. Of course, the driving layer 20 can also be formed directly on the substrate 10. The driving layer 20 specifically includes an active layer formed on the side of the buffer layer away from the substrate 10 by physical vapor deposition, chemical vapor deposition, spin coating or a combination thereof, and the active layer partially covers the buffer layer; a gate insulating layer covering the buffer layer and the active layer is formed on the side of the buffer layer away from the substrate 10 by physical vapor deposition, chemical vapor deposition, spin coating or a combination thereof, and a gate layer is formed on the side of the gate insulating layer away from the substrate 10 by deposition and other processes; then, an interlayer dielectric layer covering the gate insulating layer and the gate layer is formed on the side of the gate insulating layer away from the substrate 10 by deposition and other processes; then, source and drain vias are formed on the interlayer dielectric layer and the gate insulating layer by exposure display, etching and other processes, and the source via and the drain via are respectively located on both sides of the gate layer and are connected to the active layer; then, a source and a drain are formed in the source via and the drain via by deposition and other processes, thereby forming a thin film transistor.
接着在层间介质层远离衬底10的一侧通过沉积等工艺形成平坦层;接着通过刻蚀等工艺在平坦层上形成露出漏极的过孔,接着在平坦层远离衬底10的一侧通过沉积等工艺形成第一电极层,第一电极层包括多个第一电极,各第一电极通过过孔与各漏极一一对应连接;接着在平坦层远离衬底10的一侧通过沉积等工艺形成像素界定层,像素界定层上通过刻蚀等工艺形成多个通孔,各通孔露出各第一电极层;接着在像素界定层上形成发光单元40,发光单元40可包括空穴注入层、空穴传输层、发光材料层、电子传输层与电子注入层;接着在发光单元40远离衬底10的一侧上通过沉积等工艺形成第二电极层,第二电极层为公共电极层50,其中,第一电极层可为阳极层,第二电极层可为透明的公共阴极层。Then, a flat layer is formed on the side of the interlayer dielectric layer away from the substrate 10 by deposition and other processes; then, a via hole exposing the drain is formed on the flat layer by etching and other processes, and then a first electrode layer is formed on the side of the flat layer away from the substrate 10 by deposition and other processes, the first electrode layer includes a plurality of first electrodes, and each first electrode is connected to each drain electrode one by one through the via hole; then, a pixel defining layer is formed on the side of the flat layer away from the substrate 10 by deposition and other processes, and a plurality of through holes are formed on the pixel defining layer by etching and other processes, and each through hole exposes each first electrode layer; then, a light-emitting unit 40 is formed on the pixel defining layer, and the light-emitting unit 40 may include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer and an electron injection layer; then, a second electrode layer is formed on the side of the light-emitting unit 40 away from the substrate 10 by deposition and other processes, and the second electrode layer is a common electrode layer 50, wherein the first electrode layer may be an anode layer, and the second electrode layer may be a transparent common cathode layer.
在步骤S300中,在显示层远离衬底的一侧形成封装层,封装层为金属材料。In step S300, a packaging layer is formed on a side of the display layer away from the substrate, and the packaging layer is made of metal material.
具体地,通过物理气相沉积法、化学气相沉积法、旋涂法或其组合在显示层30远离衬底10的一侧采用金属材料形成封装层60,接着通过采用激光刻蚀技术在封装层60的金属表面形成纳米微结构,采用光栅扫描聚焦飞秒激光脉冲照射金属表面,在金属表面形成从表面上延伸出的多个疏水的微纳柱。此外,也可以采用沉积法实现,如物理气相沉积和化学气相沉积,该方法主要是利用气相发生的物理化学过程,在表面形成疏水型金属层,可以用来实现微纳米结构涂层的制造,以及仿生模版,离子刻蚀等技术实现。本领域技术人员还可采用其他方法在封装层表面形成微纳结构,例如阳极氧化法,本公开对此不做限制。Specifically, a metal material is used to form an encapsulation layer 60 on the side of the display layer 30 away from the substrate 10 by physical vapor deposition, chemical vapor deposition, spin coating or a combination thereof, and then a nano-microstructure is formed on the metal surface of the encapsulation layer 60 by laser etching technology, and a raster scanning focused femtosecond laser pulse is used to irradiate the metal surface to form a plurality of hydrophobic micro-nano columns extending from the surface. In addition, a deposition method such as physical vapor deposition and chemical vapor deposition can also be used. This method mainly utilizes the physical and chemical processes occurring in the gas phase to form a hydrophobic metal layer on the surface, which can be used to manufacture a micro-nanostructure coating, as well as bionic templates, ion etching and other technologies. Those skilled in the art can also use other methods to form a micro-nanostructure on the surface of the encapsulation layer, such as anodization, which is not limited by the present disclosure.
此外,公共电极层50可为公共阴极或公共阳极。其中,公共电极层50的材料可为金属材料举例来说,金属可以是铂、金、银、铝、铬、钡、钠、钯、铁、锰或其组合。也就是说,封装层60与公共电极层50可为相同的金属材料,可通过一次沉积工艺形成金属层作为公共电极层50与封装层60,可直接金属层的表面的形成微纳结构,以使金属层的上层区域作为封装层60,减少了显示面板的制造工艺的工艺步骤,提高了显示面板的制造效率,降低了制造成本。In addition, the common electrode layer 50 may be a common cathode or a common anode. The material of the common electrode layer 50 may be a metal material. For example, the metal may be platinum, gold, silver, aluminum, chromium, barium, sodium, palladium, iron, manganese or a combination thereof. In other words, the encapsulation layer 60 and the common electrode layer 50 may be made of the same metal material, and a metal layer may be formed as the common electrode layer 50 and the encapsulation layer 60 through a single deposition process. A micro-nano structure may be directly formed on the surface of the metal layer so that the upper region of the metal layer serves as the encapsulation layer 60, thereby reducing the process steps of the manufacturing process of the display panel, improving the manufacturing efficiency of the display panel, and reducing the manufacturing cost.
其中,通过在封装层60的表面上形成具有超疏水性质的凹凸不平的微纳结构,使得封装层60的表面形成一纳米级的极薄空气层,当外部水分接触到封装层60时,由于隔着空气层,因此可以减少水分与封装层60的直接接触,从而提升封装层的水氧阻隔能力。Among them, by forming an uneven micro-nano structure with super hydrophobic properties on the surface of the encapsulation layer 60, an extremely thin air layer at the nanometer level is formed on the surface of the encapsulation layer 60. When external moisture contacts the encapsulation layer 60, the air layer is separated, so the direct contact between the moisture and the encapsulation layer 60 can be reduced, thereby improving the water-oxygen barrier capacity of the encapsulation layer.
其中,微纳柱直径为10nm~1000nm,例如10nm、100nm、200nm、500nm、700nm、1000nm等,在此不一一列举;微纳柱的高度为10nm~1000nm,例如10nm、100nm、200nm、500nm、700nm、1000nm等,在此不一一列举;相邻的两个微纳柱之间的中心距为10nm~500nm,例如10nm、100nm、200nm、300nm、400nm、500nm等,在此不一一列举。当然,微纳柱直径也可小于10nm或大于1000nm,微纳柱的高度也可小于10nm或大于1000nm,相邻的两个微纳柱之间的中心距也可小于10nm或大于500nm,本公开对此不做限制。Among them, the diameter of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed here one by one; the height of the micro-nano column is 10nm to 1000nm, such as 10nm, 100nm, 200nm, 500nm, 700nm, 1000nm, etc., which are not listed here one by one; the center distance between two adjacent micro-nano columns is 10nm to 500nm, such as 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, etc., which are not listed here one by one. Of course, the diameter of the micro-nano column can also be less than 10nm or greater than 1000nm, the height of the micro-nano column can also be less than 10nm or greater than 1000nm, and the center distance between two adjacent micro-nano columns can also be less than 10nm or greater than 500nm, and the present disclosure does not limit this.
此外,微纳结构可包括封装层60表面上延伸出的多个三角形、半球形、梯形或其他不规则的纳米级的微纳结构,本公开对此不做限制,凡是微纳结构上的变换,均属于本公开的保护范围。In addition, the micro-nano structure may include a plurality of triangular, hemispherical, trapezoidal or other irregular nanoscale micro-nano structures extending from the surface of the packaging layer 60, and the present disclosure does not limit this, and all changes in the micro-nano structure fall within the protection scope of the present disclosure.
其中,封装层60的层厚为150nm~1000nm,以保证微纳结构的形成。封装层60的层厚例如可为150nm、200nm、400nm、500nm、700nm、1000nm等,在此不一一列举,当然,封装层60的层厚也可小于150nm或大于500nm,本公开对此不做限制。The thickness of the encapsulation layer 60 is 150 nm to 1000 nm to ensure the formation of the micro-nano structure. The thickness of the encapsulation layer 60 can be, for example, 150 nm, 200 nm, 400 nm, 500 nm, 700 nm, 1000 nm, etc., which are not listed here. Of course, the thickness of the encapsulation layer 60 can also be less than 150 nm or greater than 500 nm, which is not limited in the present disclosure.
其中,微纳结构与水汽的浸润角度为110°~160°,以保证封装层60白表面的微纳结构具备较好的疏水性。微纳结构与水汽的浸润角度例如可为110°、120°、130°、140°、150°、160°等,在此不一一列举。当然,微纳结构与水汽的浸润角度也可小于110°或大于160°,本公开对此不做限制。The wetting angle between the micro-nano structure and the water vapor is 110° to 160°, so as to ensure that the micro-nano structure on the surface of the encapsulation layer 60 has good hydrophobicity. The wetting angle between the micro-nano structure and the water vapor can be, for example, 110°, 120°, 130°, 140°, 150°, 160°, etc., which are not listed here. Of course, the wetting angle between the micro-nano structure and the water vapor can also be less than 110° or greater than 160°, and the present disclosure does not limit this.
其中,封装层60的材料包括铝、钕、铜、银中的至少一种。选取上述金属材料形成封装层60,便于在封装层60的表面形成微纳结构。当然,还可以为其它金属材料,例如锌,本公开对此不做限制。The material of the encapsulation layer 60 includes at least one of aluminum, neodymium, copper, and silver. The above metal materials are selected to form the encapsulation layer 60, so as to form a micro-nano structure on the surface of the encapsulation layer 60. Of course, other metal materials, such as zinc, can also be used, and the present disclosure does not limit this.
此外,显示面板的制造方法还包括在封装层60远离衬底10一侧形成层叠的钝化层和保护膜层,本领域技术人员还可设置更多的其它层,例如盖板,本公开对此不做限制。In addition, the manufacturing method of the display panel also includes forming a stacked passivation layer and a protective film layer on the side of the encapsulation layer 60 away from the substrate 10. Those skilled in the art may also set more other layers, such as a cover plate, which is not limited in the present disclosure.
应当注意,尽管在附图中以特定顺序描述了本公开中方法的各个步骤,但是,这并非要求或者暗示必须按照该特定顺序来执行这些步骤,或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的,可以省略某些步骤,将多个步骤合并为一个步骤执行,以及/或者将一个步骤分解为多个步骤执行等。It should be noted that although the steps of the method in the present disclosure are described in a specific order in the drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and/or one step may be decomposed into multiple steps, etc.
本公开的实施例还提供了一种显示装置,该显示装置包括上述实施方式的显示面板。该显示装置可以是于手机、平板电脑、电视或其它具有显示面板的终端设备,其有益效果可参考上述显示面板的有益效果,在此不再详述。The embodiment of the present disclosure also provides a display device, which includes the display panel of the above embodiment. The display device can be a mobile phone, a tablet computer, a television or other terminal device with a display panel, and its beneficial effects can refer to the beneficial effects of the above display panel, which will not be described in detail here.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本公开的真正范围和精神由所附的权利要求指出。Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.
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CN111129353B (en) * | 2020-02-07 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | Display device and method of manufacturing the same |
CN111736378A (en) | 2020-06-17 | 2020-10-02 | Tcl华星光电技术有限公司 | Substrate and preparation method thereof, and display panel |
CN112261845B (en) * | 2020-10-28 | 2022-06-28 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Prevent fine passageway liquid cooling system of condensation |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003344640A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Optical element and method for manufacturing the same |
KR20070050764A (en) * | 2006-06-29 | 2007-05-16 | 주식회사 대우일렉트로닉스 | Manufacturing method of ODL display device |
CN109860420A (en) * | 2019-01-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Encapsulate film layer and preparation method thereof, encapsulating structure, display device |
CN110444568A (en) * | 2019-07-31 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and preparation method thereof, display device |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1041067A (en) * | 1996-07-24 | 1998-02-13 | Matsushita Electric Ind Co Ltd | Organic electroluminescent device |
GB2335884A (en) * | 1998-04-02 | 1999-10-06 | Cambridge Display Tech Ltd | Flexible substrates for electronic or optoelectronic devices |
ITTO980580A1 (en) * | 1998-07-02 | 2000-01-02 | C R F Societa Consotile Per Az | LIGHT EMITTER DEVICE, BASED ON ELECTRO-LUMINESCENT ORGANIC MATERIAL, WITH COMPLIANT EXTERNAL INTERFACE |
JP3885440B2 (en) * | 1999-12-27 | 2007-02-21 | 凸版印刷株式会社 | Photoelectric conversion element and manufacturing method thereof |
US8058093B2 (en) * | 2005-08-26 | 2011-11-15 | Global Photonic Energy Corp. | Method of forming an encapsulating electrode |
KR101604139B1 (en) * | 2009-11-30 | 2016-03-17 | 엘지디스플레이 주식회사 | Organic light emitting diodde desplay device and fabricating method thereof |
CN101704410A (en) * | 2009-12-03 | 2010-05-12 | 上海交通大学 | Nano superhydrophobic surface used for airplane antifreezing and deicing and preparation method thereof |
KR20110065777A (en) * | 2009-12-10 | 2011-06-16 | 엘지디스플레이 주식회사 | Flexible organic light emitting diode display and manufacturing method |
CN101844272A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method and system for manufacturing self-cleaning surface structure by adopting laser interference photoetching technology |
KR101127595B1 (en) * | 2010-05-04 | 2012-03-23 | 삼성모바일디스플레이주식회사 | Organic light emitting display device and manufacturing method thereof |
CN102167280B (en) * | 2011-01-13 | 2014-03-12 | 西北工业大学 | Super-hydrophobic silicon micron-nano composite structure and preparation method thereof |
US9153794B2 (en) * | 2011-05-11 | 2015-10-06 | Linde Aktiengesellschaft | Thin film encapsulation of organic light emitting diodes |
US8999438B2 (en) * | 2011-09-09 | 2015-04-07 | Weixing Lu | Systems and methods for super-hydrophobic and super-oleophobic surface treatments |
CN102779747B (en) * | 2012-07-30 | 2014-11-05 | 江苏物联网研究发展中心 | Machining method of nano column/needle forest structure |
CN102943246B (en) * | 2012-11-26 | 2014-10-29 | 四川材料与工艺研究所 | Method for preparing metal surface super-hydrophobicity aluminum coating |
CN103077993A (en) * | 2013-01-23 | 2013-05-01 | 华中科技大学 | Solar cell with double-sided heterojunction structure and preparation method for solar cell |
CN103395739B (en) * | 2013-07-22 | 2016-01-06 | 江苏物联网研究发展中心 | A kind of preparation method of micro-concave mirror |
CN103738913A (en) * | 2013-12-31 | 2014-04-23 | 中山大学 | Method for manufacturing quasi-three-dimensional micron-nanometer column array |
KR102264488B1 (en) * | 2014-10-13 | 2021-06-11 | 엘지디스플레이 주식회사 | Organic light emitting display device having hydrophobi bank layer and method of fanricating thereof |
CN104310307B (en) * | 2014-11-03 | 2015-08-12 | 江苏物联网研究发展中心 | The graphical processing method of nano column/needle forest structure |
KR102268900B1 (en) * | 2014-11-19 | 2021-06-23 | 엘지디스플레이 주식회사 | Organic light emitting display device |
CN105870159B (en) * | 2016-06-07 | 2018-07-17 | 京东方科技集团股份有限公司 | A kind of organic LED display panel, display device and production method |
CN106571430B (en) * | 2016-09-18 | 2019-03-01 | 湖畔光电科技(江苏)有限公司 | Micro-display device encapsulating structure and technique |
CN106495497B (en) * | 2016-09-21 | 2019-03-08 | 华北电力大学 | A kind of preparation method of surface anti-reflection self-cleaning structure |
CN106992268A (en) * | 2017-04-28 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of organic light emitting diode device and its manufacture method, display device |
CN207637810U (en) * | 2017-12-18 | 2018-07-20 | 长理纳米生物技术(长春)有限公司 | Silicon photrouics with superhydrophobic surface structure |
CN109980118A (en) * | 2017-12-27 | 2019-07-05 | 宁波长阳科技股份有限公司 | A kind of water vapor rejection film |
TWM580039U (en) * | 2019-02-26 | 2019-07-01 | 閎暉實業股份有限公司 | Composite structure of lamination |
CN109920933B (en) * | 2019-03-05 | 2021-02-09 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method thereof, display panel and display device |
-
2019
- 2019-11-27 CN CN201911180989.8A patent/CN110854300B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003344640A (en) * | 2002-05-29 | 2003-12-03 | Canon Inc | Optical element and method for manufacturing the same |
KR20070050764A (en) * | 2006-06-29 | 2007-05-16 | 주식회사 대우일렉트로닉스 | Manufacturing method of ODL display device |
CN109860420A (en) * | 2019-01-30 | 2019-06-07 | 京东方科技集团股份有限公司 | Encapsulate film layer and preparation method thereof, encapsulating structure, display device |
CN110444568A (en) * | 2019-07-31 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and preparation method thereof, display device |
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