CN110835743A - 9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing - Google Patents

Abstract

The invention relates to a 9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing, comprising a feeding cavity, a preheating cavity, a HWCVD cavity for depositing an intrinsic amorphous silicon film, and a doped amorphous silicon film. Deposition of HWCVD chamber, transition chamber, first, second, and third TCO film deposition PVD chamber and blanking chamber are connected in sequence through vacuum locks, and vacuum locks are set at the head and tail, and a mobile device penetrates each chamber from front to back and vacuum lock, the set-up carrier plate in the feeding chamber, the vertical carrier plate is set on the mobile device and is movable from front to back in this integrated equipment, the second TCO film deposition PVD chamber is equipped with a sputtering target, Each of the above-mentioned cavities is connected with an ultra-pure gas circuit, a heating system and a vacuum pumping system. It can effectively avoid exposure to the air in the product preparation process, improve the performance of the crystalline silicon heterojunction solar cell, and reduce its production cost.

Description

9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing

technical field

The invention relates to the field of high-efficiency crystalline silicon solar cell manufacturing, in particular to a 9-cavity vertical HWCVD-PVD integrated device for solar cell manufacturing.

Background technique

Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon/crystalline silicon heterojunction structures. The two key steps in its production technology are the deposition of amorphous silicon-based thin films (including intrinsic layers and doped layers, made of amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon, etc.) and transparent conductive Deposition of oxide TCO layers. The more commonly used deposition methods for amorphous silicon-based thin films are low-temperature chemical vapor deposition methods, including plasma chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). Controlled sputtering is the most commonly used). In production, the equipment corresponding to these two technologies is usually separated. That is, the low temperature CVD equipment is an independent system, which usually includes several parts such as feeding and preheating chamber, intrinsic layer deposition chamber, doping deposition chamber (p-type or n-type) and blanking chamber; and PVD equipment also It should include a feeding chamber, a preheating chamber, a film deposition chamber, and a blanking chamber. Between the CVD and PVD systems, the loading and unloading devices for silicon wafers and the conveying devices for transferring silicon wafers between different equipment are also required. The overall system is very complex. Moreover, because the product must be exposed to the air during the transfer between the CVD and PVD systems, the surface of the product is affected by water vapor, oxygen, dust, etc. in the air, resulting in performance degradation; high operating costs in production, and the number of workers required is also higher. many.

SUMMARY OF THE INVENTION

The technical problem solved by the present invention is to provide a method that can effectively avoid the exposure of the intrinsic and doped silicon-based thin films and the TCO film layers to the air during the product preparation process, improve the performance of the crystalline silicon heterojunction solar cell, and reduce its production cost. 9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing.

The technical scheme adopted by the present invention includes: a feeding cavity, a preheating cavity, a HWCVD cavity for depositing an intrinsic amorphous silicon film, a HWCVD cavity for depositing a doped amorphous silicon film, a transition cavity, and a first TCO film The deposition PVD cavity, the second TCO film deposition PVD cavity, the third TCO film deposition PVD cavity, and the unloading cavity are connected in sequence through a vacuum lock, and the feeding cavity and the unloading cavity are connected in turn. The cavity outlet is also provided with a vacuum lock. A mobile device is connected to each cavity and the vacuum lock from front to back. The intrinsic amorphous silicon film is deposited in the HWCVD cavity, and the doped amorphous silicon film is deposited in the HWCVD cavity. The first The TCO film deposition PVD cavity, the second TCO film deposition PVD cavity, and the third TCO film deposition PVD cavity are all vertical structures, and a carrier plate is set up in the feeding cavity, and the vertical carrier plate is set on the mobile device in a manner The integrated equipment is movable from front to back, the second TCO film deposition PVD chamber is equipped with a sputtering target, the transition chamber is externally connected to a heating system and/or a cooling water system and/or a vacuum system, and the blanking chamber is externally connected Nitrogen system and/or vacuum system.

The moving device is a pusher feeding track or a moving track or a moving hanger.

Each of the above-mentioned cavities is connected to an ultrapure gas circuit system and/or a heating system and/or a cooling water system and/or a vacuum system.

The vertical structure of the intrinsic amorphous silicon film deposition HWCVD cavity, the doped amorphous silicon film deposition HWCVD cavity, and the vertical structure of the three TCO film deposition PVD cavity are used to integrate these two thin film deposition equipment. The cavities are connected by a vacuum lock structure, and the product is not exposed to the atmosphere when the product is transferred between the cavities of the equipment through the mobile device.

When the equipment is in use, each cavity is kept in a vacuum state by its external vacuum system before the silicon wafer enters. Fix the silicon wafer to be coated on the vertically placed carrier plate; break the vacuum in the feeding chamber, open the vacuum lock on the feeding end, the carrier plate is sent into the feeding chamber by the mobile device, and then close the vacuum lock to vacuumize, Open the vacuum lock between the feeding chamber and the heating chamber, send the carrier plate into the heating chamber and close the vacuum lock to evacuate for pre-heating. Pre-heating can be done in the chamber or by an external heating system to reach a predetermined degree of vacuum and temperature Then, open the vacuum lock between the preheating chamber and the HWCVD chamber for the deposition of the intrinsic amorphous silicon film; send the carrier plate into the HWCVD chamber for the deposition of the intrinsic amorphous silicon film to close the vacuum lock; Film deposition HWCVD chamber for the deposition of intrinsic amorphous silicon film layer, after the deposition is completed, the residual reaction gas is removed, and after reaching the required vacuum degree, the intrinsic amorphous silicon film deposition HWCVD chamber is opened for deposition of doped amorphous silicon film The vacuum lock between the HWCVD chambers, the carrier plate is sent into the HWCVD chamber for doped amorphous silicon film deposition, and the vacuum lock is closed; the doped amorphous silicon film layer is doped in the HWCVD chamber for doped amorphous silicon film deposition After the deposition is completed, the residual reaction gas is evacuated, the vacuum lock behind the chamber is opened after the required vacuum degree is reached, and the carrier plate is sent into the transition chamber. The cooling transition adjusts the temperature of the carrier plate, which plays the role of preheating before TCO deposition and adjusting the HWCVD part and the TCO deposition part; then open the vacuum lock and send it into the first TCO film deposition PVD cavity to close the vacuum lock; first, 2. The vacuum lock between the PVD chambers for deposition of three TCO films is kept open under normal working conditions. The sputtering target is installed in the second PVD chamber for deposition of TCO films. The coating process of TCO; then open the vacuum lock after the third TCO film is deposited in the PVD chamber, and the carrier plate is sent into the blanking chamber to close the vacuum lock; in the blanking chamber, use nitrogen or clean air to break the vacuum, and then open the lower chamber The vacuum lock at the discharge end of the material chamber removes the carrier plate; close the vacuum lock and vacuumize the material chamber. In this way, the coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for amorphous silicon/crystalline silicon heterojunction solar cell is completed.

The beneficial effects of the present invention are: the whole process of deposition of intrinsic amorphous silicon, doped amorphous silicon and TCO thin films deposited on one surface of a silicon wafer during the manufacturing process of amorphous silicon/crystalline silicon heterojunction solar cells is not exposed to air , reducing the oxidation of the silicon wafer film by the atmosphere and the pollution of the surface of each structure caused by water vapor and dust in the air, thereby improving the performance of the product. The integrated design of HWCVD and PVD is carried out from front to back through the mobile device, which saves the unloading cavity of HWCVD equipment and the loading cavity of PVD, as well as the transfer device and unloading and loading device between the two equipments. Reduce the complexity of the equipment, shorten the process and man-hours, reduce the cost of purchasing and operating the production line equipment; reduce the process, thereby reducing the handling of the product and the physical impact on the silicon wafer between the carrier tray, thereby reducing the product. The fragmentation rate further reduces the cost.

Description of drawings

FIG. 1 is a front view of the present invention.

Among them: feeding chamber 1; preheating chamber 2; intrinsic amorphous silicon film deposition HWCVD chamber 3; doped amorphous silicon film deposition HWCVD chamber 4; transition chamber 5; PVD for the first TCO film deposition Cavity 6; PVD cavity 7 for deposition of the second TCO film; PVD cavity 8 for deposition of the third TCO film; system 14; heating system 15.

Detailed ways

The present patent will be further elaborated below in conjunction with specific embodiments. It should be understood that these examples are only used to illustrate the present patent and not to limit the scope of the present patent. In addition, it should be understood that after reading the content taught in this patent, those skilled in the art can make various changes or modifications to this patent, and these equivalent forms also fall within the scope defined by the appended claims of this application.

As shown in Figure 1: A 9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing includes a feeding cavity 1, a preheating cavity 2, an intrinsic amorphous silicon film deposition HWCVD cavity 3, a doping cavity 3 Hetero-amorphous silicon film deposition HWCVD chamber 4, transition chamber 5, PVD chamber 6 for first TCO film deposition, PVD chamber 7 for second TCO film deposition, PVD chamber 8 for third TCO film deposition, lower Material cavity 9 , carrier plate 10 , moving track 11 , vacuum lock 12 , nitrogen system 13 , vacuuming system 14 , heating system 15 . The above-mentioned HWCVD and PVD cavities are vertical, feeding cavity 1, preheating cavity 2, HWCVD cavity 3 for intrinsic amorphous silicon film deposition, HWCVD cavity 4 for doped amorphous silicon film deposition, and transition cavity Body 5, PVD chamber 6 where the first TCO film is deposited, PVD chamber 7 where the second TCO film is deposited, PVD chamber 8 where the third TCO film is deposited, and the blanking chamber 9 are connected in sequence from front to back and two by two. They are connected by a vacuum lock 12. The feeding end of the feeding chamber 1 and the discharging end of the feeding chamber 9 are also provided with vacuum locks. The feeding chamber 1 is provided with a vertical carrier plate 10. The moving track 11 on which the feeding carrier plate moves in each cavity is sequentially loaded from front to back. The unloading cavity 9 is connected to the nitrogen system 14 to supply nitrogen to break the vacuum, and the vacuum pumping system 14 to pump vacuum. The transition cavity 5 is connected to the heating system 15. The heating and vacuum connection system 14 is evacuated.

In this embodiment, the feeding cavity, the preheating cavity, each HWCVD, and each PVD cavity are connected to an ultrapure gas circuit system and/or heating system and/or cooling water system and/or vacuum system, according to the on-site production synthesis Option: The heating system 15 connected to the transition cavity 5 also has the heating effect of cooling adjustment, which is used to meet the different needs of temperature adjustment.

Claims (3)

1. a 9-cavity vertical HWCVD-PVD integrated device for solar cell manufacturing, characterized in that: comprising a feeding cavity, a preheating cavity, an intrinsic amorphous silicon film deposition HWCVD cavity, a doping cavity Amorphous silicon film deposition HWCVD chamber, transition chamber, first TCO film deposition PVD chamber, second TCO film deposition PVD chamber, third TCO film deposition PVD chamber and blanking chamber, any of the above chambers They are connected in sequence through vacuum locks. The feeding port of the feeding cavity and the discharging port of the unloading cavity are also equipped with vacuum locks. A moving device penetrates each cavity and the vacuum lock from front to back, and the intrinsic amorphous silicon film is deposited. The HWCVD cavity, the HWCVD cavity for doped amorphous silicon film deposition, the first TCO film deposition PVD cavity, the second TCO film deposition PVD cavity, and the third TCO film deposition PVD cavity are all vertical structures. The set-up carrier in the body, the vertical carrier is set on the mobile device and is movable from front to back in this integrated equipment, the second TCO film deposition PVD chamber is equipped with a sputtering target, and the transition chamber is connected to an external heating system and /or cooling water system and/or vacuum system, and external nitrogen system and/or vacuum system to the blanking chamber. 2 . The 9-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing according to claim 1 , wherein the moving device is a pusher feeding track or a moving track or a moving hanger. 3 . 3. The 9-cavity vertical HWCVD-PVD integrated device for solar cell manufacturing according to claim 1, wherein each cavity is connected to an external ultrapure gas circuit system and/or a heating system and/or a cooling system Water system and/or vacuum system.

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