CN110828486A - Display panel manufacturing method and display panel - Google Patents

Abstract

The invention discloses a manufacturing method of a display panel and a display panel. The method includes: providing a substrate; forming a channel on the substrate, the channel includes a first channel and a second channel; making the first channel and the second channel contain hydrogen ions with different concentrations; based on the channel An array device is formed, the array device includes a driving transistor formed based on the first channel and a switching transistor formed based on the second channel; a light emitting device layer is formed on the side of the array device away from the substrate. By making the first channel and the second channel contain different concentrations of hydrogen ions, the sub-threshold swings of the driving transistor corresponding to the first channel and the switching transistor corresponding to the second channel are different, so that the The driving transistor satisfies the control of the gray scale, and at the same time enables the switching transistor to have a faster switching speed.

Description

Display panel manufacturing method and display panel

technical field

Embodiments of the present invention relate to the field of display technology, and in particular, to a method for fabricating a display panel and a display panel.

Background technique

In the prior art, the driving transistors and the switching transistors in the display panel have the same manufacturing process, resulting in equal subthreshold swings of the driving transistors and the switching transistors, which is not conducive to the grayscale control of the driving transistors and the rapid turn-on of the switching transistors.

SUMMARY OF THE INVENTION

The invention provides a manufacturing method of a display panel and a display panel, so as to realize that the switching transistor and the driving transistor respectively meet different sub-threshold swing requirements.

In a first aspect, an embodiment of the present invention provides a method for fabricating a display panel, including:

provide the substrate;

forming a channel on the substrate, the channel includes a first channel and a second channel;

causing the first channel and the second channel to contain different concentrations of hydrogen ions;

An array device is formed based on the channel, and the array device includes a driving transistor formed based on the first channel and a switching transistor formed based on the second channel;

A light emitting device layer is formed on a side of the array device away from the substrate.

Optionally, the first channel and the second channel contain hydrogen ions of different concentrations, including:

A first mask is arranged on the side of the channel away from the substrate, the opening area of the first mask corresponds to the first channel, and the non-open area of the first mask corresponds to the the second channel;

implanting the first channel with hydrogen ions of a first dose and a first doping energy;

removing the first mask; setting a second mask on the side of the channel away from the substrate, the opening area of the second mask corresponds to the second channel, the second mask The non-open area of the mask corresponds to the first channel;

The second channel is implanted with hydrogen ions with a second dose and a second doping energy, so that the hydrogen ion concentration of the second channel is different from that of the first channel.

Optionally, the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the first dose is smaller than the second dose, and the first doping energy less than the second doping energy.

Optionally, the range of the first dose is less than or equal to 1E+12ions/cm2, the range of the second dose is 3E+12-5E+12ions/cm2, the first doping energy and the second The range of doping energy is less than or equal to 5KV.

Optionally, causing the first channel and the second channel to contain hydrogen ions with different concentrations, further comprising:

forming a gate insulating layer on a side of the channel away from the substrate;

A first mask is disposed on the side of the gate insulating layer away from the substrate, the opening area of the first mask corresponds to the first channel, and the non-opening area of the first mask corresponding to the second channel;

implanting the first channel with hydrogen ions at a third dose and a third doping energy;

removing the first mask; setting a second mask on the side of the gate insulating layer away from the substrate, the opening area of the second mask corresponds to the second channel, the The non-open area of the second mask corresponds to the first channel;

The second channel is implanted with hydrogen ions at a fourth dose and a fourth doping energy.

Optionally, the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the third dose is smaller than the fourth dose, and the third doping energy less than the fourth doping energy.

Optionally, the range of the third dose is less than or equal to 1E+12ions/cm2, the range of the fourth dose is 3E+12-5E+12ions/cm2, the third doping energy and the fourth The range of doping energy is 5KV-10KV.

Optionally, after the channel is formed on the substrate, the method further includes:

Fluoride ions are implanted into the channel.

Optionally, when fluorine ions are implanted into the channel, the implantation dose of the fluorine ions is 1E+12-2E+12 ions/cm 2 , and the doping energy is 10KV.

In a second aspect, an embodiment of the present invention provides a display panel, which is manufactured by using the manufacturing method of a display panel provided by any embodiment of the present invention.

In the technical solution of the embodiment of the present invention, by causing the first channel and the second channel to contain hydrogen ions of different concentrations, the sub-surface of the driving transistor corresponding to the first channel and the switching transistor corresponding to the second channel are The threshold swings are different, so that the driving transistor can satisfy the gray-scale control, and at the same time, the switching transistor can have a faster switching speed.

Description of drawings

FIG. 1 is a manufacturing method of a display panel provided by an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a display panel corresponding to step S110 of the method for manufacturing a display panel according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a display panel corresponding to step S120 of the method for manufacturing a display panel according to an embodiment of the present invention;

4 is a schematic circuit diagram of a conventional pixel driving circuit;

FIG. 5 is a schematic structural diagram of a display panel corresponding to step S140 of the method for fabricating a display panel according to an embodiment of the present invention;

6 is a schematic structural diagram of a display panel corresponding to step S150 of the method for fabricating a display panel according to an embodiment of the present invention;

FIG. 7 is another manufacturing method of a display panel provided by an embodiment of the present invention;

FIG. 8 is a manufacturing flowchart corresponding to step S230 of the manufacturing method of the display panel provided by the embodiment of the present invention;

FIG. 9 is a manufacturing flowchart corresponding to step S250 of the manufacturing method of the display panel provided by the embodiment of the present invention;

FIG. 10 is another manufacturing method of a display panel provided by an embodiment of the present invention;

11 is a schematic structural diagram of a display panel corresponding to step S330 of the method for fabricating a display panel according to an embodiment of the present invention;

FIG. 12 is a manufacturing flowchart corresponding to step S340 of the manufacturing method of the display panel provided by the embodiment of the present invention;

13 is a manufacturing flowchart corresponding to step S360 of the manufacturing method of the display panel provided by the embodiment of the present invention;

FIG. 14 is another manufacturing method of a display panel provided by an embodiment of the present invention;

FIG. 15 is a schematic structural diagram of a display panel according to an embodiment of the present invention.

Detailed ways

The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, the drawings only show some but not all structures related to the present invention.

In the prior art, organic light emitting display (organic light emitting display, OLED) panels are generally classified into active matrix organic light emitting display (active matrix organic light emitting display, AMOLED) panels and passive matrix organic light emitting display (passive matrix organic light emitting display) panels. , PMOLED) panel. Among them, the AMOLED panel usually uses a low-temperature polycrystalline silicon thin film transistor (LTPS TFT) to form a pixel driving circuit to drive the organic light emitting diode (OLED) in the AMOLED panel to emit light. In the process of driving the OLED to emit light by the LTPS TFT, the pixel driving circuit formed by the LTPS TFT includes a switching transistor and a driving transistor. The switching transistor is used for switching, and the switching transistor is usually required to have a low sub-threshold swing (S.S), so that its on-current varies greatly with the voltage, so as to ensure that the switching transistor has the purpose of fast charging and discharging, so that the The switching transistor has good switching performance. The driving transistor is used to drive the OLED light-emitting effect. Usually, the driving transistor is required to have a high sub-threshold swing, so that the change of the on-current with the voltage is relatively small, so as to ensure that the on-current output by the driving transistor is relatively stable, which is conducive to pixel driving. The control of the gray scale when the circuit drives the OLED to emit light. The subthreshold swing of a transistor is usually related to the mobility of the transistor, the gate capacitance, and the aspect ratio of the active layer channel. However, in the display panel, the driving transistor and the switching transistor have the same process, so that the driving transistor and the switching transistor have the same sub-threshold swing, which is not conducive to the grayscale control of the driving transistor or the switching speed of the switching transistor.

In view of the above technical problems, embodiments of the present invention provide a method for fabricating a display panel. FIG. 1 is a manufacturing method of a display panel provided by an embodiment of the present invention. In one embodiment of the present invention, the active layer specifically refers to a channel of a transistor. As shown in Figure 1, the manufacturing method of the display panel includes:

S110, providing a substrate.

Specifically, FIG. 2 is a schematic structural diagram of a display panel corresponding to step S110 of the method for manufacturing a display panel according to an embodiment of the present invention. As shown in FIG. 2 , the substrate 10 may be a flexible substrate or a rigid substrate. Exemplarily, the flexible substrate may be a polyimide (PI) substrate, and the rigid substrate may be a glass substrate.

S120 , forming an active layer on the substrate, where the active layer includes a first active layer and a second active layer. Specifically, the first channel and the second channel are formed on the substrate.

Specifically, FIG. 3 is a schematic structural diagram of a display panel corresponding to step S120 of the method for fabricating a display panel according to an embodiment of the present invention. As shown in FIG. 3 , a channel 20 is formed on the substrate 10 , and the channel 20 may be formed by a chemical vapor deposition (chemical vapor deposition, CVD) process. After the channel 20 is formed, an etching barrier layer is formed on the side of the channel 20 away from the substrate, and the channel 20 is patterned by etching and other processes to form the first channel 201 and the second channel 202 in the channel 20 . The first channel 201 and the second channel 202 are disposed in the same layer and do not contact each other. The first channel 201 and the second channel 202 correspond to channels of different transistors, respectively. Exemplarily, the first channel 201 may correspond to the channel of the driving transistor, and the second channel 202 may correspond to the channel of the switching transistor.

In addition, after the first channel 201 and the second channel 202 are formed, the source region and the drain region corresponding to the first channel 201 and the second channel 202 are respectively opened, so that the source and drain regions formed later are formed. The source and drain electrodes corresponding to the layers can be electrically connected to the first channel 201 and the second channel 202 .

It should be noted that, before forming the channel 20 , a buffer layer may also be deposited on the substrate 10 . The buffer layer is used to block impurities such as water and oxygen, so as to prevent impurities from entering the display panel and affecting the performance of the device. The buffer layer can be silicon dioxide, silicon nitride, or the like.

S130. Make the first active layer and the second active layer contain hydrogen ions with different concentrations. Specifically, it may mean that the first channel and the second channel contain different hydrogen ions.

Specifically, hydrogen ions have negative charges, and under the action of an electric field, hydrogen ions can move. Therefore, by applying a voltage to both sides of the channel 20, an electric field can be generated in the channel 20, thereby realizing the implantation of hydrogen ions. The magnitude of the electric field affects the rate at which hydrogen ions move, and the dose of hydrogen ions affects the concentration of hydrogen ions implanted into the channel 20 . Therefore, the depth and concentration of hydrogen ions implanted into the channel 20 can be controlled by adjusting the magnitude of the voltage applied on both sides of the channel 20 and the dose of hydrogen ions when implanting hydrogen ions. Exemplarily, continuing to refer to FIG. 3 , after hydrogen ions are implanted into the first channel 201 and the second channel 202 , in order to make the hydrogen ion concentrations in the first channel 201 and the second channel 202 different, the implantation During the process, the hydrogen ion doses of the first channel 201 and the second channel 202 are different, and the doping energy in the first channel 201 and the second channel 202 may also be different during the implantation process.

The concentration of hydrogen ions in the channel 20 affects the subthreshold swing of the transistor. The channel 20 includes fixed positive charges, and hydrogen ions can be coupled with the fixed positive charges in the channel 20 to repair the internal defects of the channel 20 , thereby reducing the subthreshold swing of the transistor corresponding to the channel 20 . When the hydrogen ion concentration in the channel 20 is relatively high, the hydrogen ion can better repair the internal defects of the channel 20, so that the subthreshold swing of the transistor formed by the channel 20 is relatively small, and has good switching performance. When the concentration of hydrogen ions in the channel 20 is relatively small, the degree of hydrogen ions repairing the internal defects in the channel 20 is relatively small, so that the sub-threshold swing of the transistor formed by the channel 20 is relatively large, and the OLED has good stability when driving OLED to emit light. sex. Continuing to refer to FIG. 3 , the hydrogen ion concentration after implantation in the first channel 201 may be different from the hydrogen ion concentration after implantation in the second channel 202 , so that the driving transistor formed by the first channel 201 and the switch formed by the second channel 202 Transistors have different subthreshold swings. Therefore, the driving transistor can satisfy the gray scale control, and at the same time, the switching transistor can have a better switching speed.

It should be noted that when hydrogen ions are implanted into the first channel 201 and the second channel 202, the entire layer of the first channel 201 and the second channel 202 can be implanted, or the first channel 201 and the second channel 202 can be implanted in the whole layer. The channel 202 is patterned and then implanted, which is not limited here.

Exemplarily, FIG. 4 is a schematic circuit diagram of a conventional pixel driving circuit. As shown in FIG. 4 , the pixel circuit includes a driving transistor Tdr and switching transistors T1-T6. In the reset phase, the first scan signal Scan1 controls the fourth transistor T4 and the fifth transistor T5 to be turned on, and the reference signal Vref is written into the anode of the OLED and the gate of the driving transistor Tdr, so as to control the anode of the OLED and the gate of the driving transistor Tdr A reset is performed, and the drive transistor Tdr is turned on. In the writing and compensation stage, the second scan signal Scan2 controls the first transistor T1 and the third transistor T3 to be turned on, the data signal Vdata is written into the first pole of the driving transistor Tdr through the first transistor T1, and is increased through the third transistor T3 The gate potential of the driving transistor Tdr is turned off until the driving transistor Tdr is turned off. At this time, the potential of the first electrode of the driving transistor Tdr is Vdata, and the gate potential is Vdata-Vth (wherein, Vth is the threshold voltage of the driving transistor Tdr), and through the Capacitor C1 remains. In the light-emitting stage, the light-emitting signal E1 controls the second transistor T2 and the sixth transistor T6 to be turned on, the first power supply voltage Vdd is input to the first pole of the driving transistor Tdr through the second transistor T2, and the first pole of the driving transistor Tdr increases from Vdata To Vdd, the driving transistor Tdr is turned on, and then a driving current is formed through the potential difference between the first electrode and the gate electrode to be input to the anode of the OLED through the sixth transistor T6, and the cathode of the OLED is electrically connected to the second power supply voltage Vss, thereby driving OLED glows. Therefore, when the first channel 201 corresponds to the channel of the driving transistor and the second channel 202 corresponds to the channel of the switching transistor, the first channel 201 may correspond to the channel of the driving transistor Tdr in the pixel driving circuit, and the second channel 202 corresponds to the channel of the driving transistor Tdr in the pixel driving circuit. 202 may correspond to the channels of the switching transistors T1-T6 in the pixel driving circuit.

S140 , forming an array device based on the active layer, the array device including a driving transistor formed based on the first active layer and a switching transistor formed based on the second active layer.

Specifically, an array device is formed based on a channel, and the column device includes a driving transistor formed based on the first channel and a switching transistor formed based on the second channel.

Specifically, when forming the array device, it may include forming a gate insulating layer, a gate layer, an interlayer insulating layer and a source and drain layer on the side of the channel away from the substrate. FIG. 5 is a schematic structural diagram of a display panel corresponding to step S140 of the method for fabricating a display panel according to an embodiment of the present invention.

Taking a top-gate transistor as an example, as shown in FIG. 5 , along the side of the channel 20 away from the substrate 10 , the gate insulating layer 31 , the gate layer 30 , the interlayer insulating layer 40 and the source and drain layers 50 are stacked in sequence.

The gate insulating layer 31 is in contact with the channel 20 , and an interface defect is formed between the gate insulating layer 31 and the channel 20 , that is, a dangling bond is formed between the gate insulating layer 31 and the channel 20 . The implanted hydrogen ions can also be coupled with the dangling bonds to achieve passivation of the dangling bonds, thereby improving the interface defect between the channel 20 and the gate insulating layer 31, thereby reducing the subthreshold swing of the transistor. When the hydrogen ion concentration in the channel 20 is relatively large, the hydrogen ions are more coupled with the dangling bonds, so that the corresponding transistor has a relatively small sub-threshold swing and good switching performance. When the hydrogen ion concentration in the channel 20 is relatively small, the coupling between the hydrogen ions and the dangling bonds is relatively small, so that the subthreshold swing of the corresponding transistor is relatively large, and the OLED has good stability when driving the OLED to emit light. Therefore, by implanting different doses of hydrogen ions into the first channel 201 and the second channel 202 , the transistors formed by the first channel 201 and the transistors formed by the second channel 202 have different subthreshold swings.

The gate insulating layer 31 can also be formed by a CVD deposition process. After the gate insulating layer 31 is formed, a metal layer may be formed as the gate electrode layer 30, and the gate electrode layer 30 is patterned to form a gate electrode. After the gate is formed, the interlayer insulating layer 40 may be formed using CVD deposition. The source and drain layers 50 are formed on the side of the interlayer insulating layer 40 away from the substrate 10 . The source and drain layers 50 may be metal layers. The source electrode 51 and the drain electrode 52 are formed by patterning.

It should be noted that the source electrode 51 and the drain electrode 52 are electrically connected to the source region and the drain region of the channel 20 , so it is necessary to provide openings on the gate insulating layer 31 and the interlayer insulating layer 40 . That is, an opening is formed by etching the barrier layer after the gate insulating layer 31 is formed, another opening is formed by etching the barrier layer after the interlayer insulating layer 40 is formed, and the source electrode 51 and the drain electrode 52 pass through the gate electrode respectively. The openings on the insulating layer 31 and the interlayer insulating layer 40 are electrically connected to the source and drain regions on the channel 20 .

S150, forming a light emitting device layer on the side of the array device away from the substrate.

Specifically, FIG. 6 is a schematic structural diagram of a display panel corresponding to step S150 of the method for fabricating a display panel according to an embodiment of the present invention. As shown in FIG. 6 , a light-emitting device layer 60 is formed on the side of the source-drain layer 50 away from the substrate 10 for emitting light under the driving of a pixel driving circuit formed by a transistor. The light emitting device layer 60 may include a stacked anode layer 61 , a light emitting layer 62 and a cathode layer 63 , and the anode layer 61 is disposed between the source and drain layers 50 and the light emitting layer 62 . The anode formed by the patterning of the anode layer 61 provides a driving signal through the pixel driving circuit, so that the light emitting device layer 60 emits light.

In the technical solution of this embodiment, the first channel and the second channel contain hydrogen ions of different concentrations, so that the sub-threshold swings of the driving transistor corresponding to the first channel and the switching transistor corresponding to the second channel are different , so that the driving transistor can satisfy the gray scale control, and at the same time, the switching transistor can have a better switching speed.

FIG. 7 is another method for fabricating a display panel according to an embodiment of the present invention. In one embodiment of the present invention, the active layer may be a channel region of a transistor. As shown in Figure 7, the manufacturing method of the display panel includes:

S210, providing a substrate.

S220 , forming an active layer on the substrate, where the active layer includes a first active layer and a second active layer.

Specifically, a channel is formed on the substrate, and the channel includes a first channel and a second channel.

S230 , setting a first mask on the side of the active layer away from the substrate, the opening area of the first mask corresponds to the first active layer, and the non-open area of the first mask corresponds to the second active layer.

Specifically, a first reticle is disposed on the side of the channel away from the substrate, the opening area of the first reticle corresponds to the first channel, and the non-opening area of the first reticle corresponds to the second channel.

Specifically, FIG. 8 is a manufacturing flowchart corresponding to step S230 of the manufacturing method of the display panel provided by the embodiment of the present invention. As shown in FIG. 8 , the first mask 70 is disposed on the side of the channel 20 away from the substrate 10 . The opening region of the first mask 70 corresponds to the first channel 201 , so that hydrogen ions can be implanted into the first channel 201 through the first mask 70 during hydrogen ion implantation. The non-open area of the first mask 70 corresponds to the second channel 202 , so that the implantation of hydrogen ions into the second channel 202 can be blocked during hydrogen ion implantation.

S240 , implanting hydrogen ions with a first dose and a first doping energy into the first active layer. Specifically, the first channel may be implanted with hydrogen ions of a first dose and a first doping energy.

Specifically, referring to FIG. 8 , the second channel 202 is blocked by the non-opening of the first mask 70 , and hydrogen ions of the first dose and the first doping energy are implanted into the first channel 201 . There is no hydrogen ion implantation in the second channel 202 .

S250, remove the first mask, and set a second mask on the side of the active layer away from the substrate, the opening area of the second mask corresponds to the second active layer, and the non-open area of the second mask corresponds to first active layer.

Specifically, the first mask is removed, and a second mask is provided on the side of the channel away from the substrate, the opening area of the second mask corresponds to the second channel, and the non-open area of the second mask is Corresponding to the first channel.

FIG. 9 is a manufacturing flowchart corresponding to step S250 of the manufacturing method of the display panel provided by the embodiment of the present invention. As shown in FIG. 9 , after the implantation of hydrogen ions into the first channel 201 is completed, the first mask 70 is removed, and a second mask 80 is provided on the side of the channel 20 away from the substrate 10 . The opening region of the second mask 80 corresponds to the second channel 202 , so that hydrogen ions can be implanted into the second channel 202 through the second mask 80 during hydrogen ion implantation. The non-open area of the second mask 80 corresponds to the first channel 201 , so that the implantation of hydrogen ions into the first channel 201 can be blocked during hydrogen ion implantation.

S260 , implanting hydrogen ions into the second channel using the second dose and the second doping energy, so that the hydrogen ion concentration of the second channel is different from that of the first channel.

Specifically, referring to FIG. 9 , the first channel 201 is blocked by the non-opening of the second mask 80 , and hydrogen ions of the second dose and the second doping energy are implanted into the second channel 202 . There is no hydrogen ion implantation in the first channel 201 .

Therefore, in the above process, hydrogen ions of the first dose and the first doping energy are implanted into the first channel 201 , and hydrogen ions of the second dose and the second doping energy are implanted into the second channel 202 . By setting the first dose and the second dose to be different, the hydrogen ion concentration in the first channel 201 and the hydrogen ion concentration in the second channel 202 are different, so that the driving transistor formed by the first channel 201 is different from the second channel. The sub-threshold swings of the switching transistors formed by the channel 202 are different, so that the driving transistor can satisfy the control of the gray scale, and at the same time, the switching transistor has a better switching speed.

Exemplarily, Table 1 shows the electrical properties of a driving transistor and a switching transistor provided in the prior art. Table 2 provides the electrical properties of another driving transistor and switching transistor provided by the technical solution. The electrical parameters of the driving transistor are the electrical parameters corresponding to the DTFT, and the electrical parameters of the switching transistor are the electrical parameters corresponding to the STFT. In addition, SS is the subthreshold swing. It can be seen from Table 1 and Table 2 that after the hydrogen ion implantation into the channel, and the hydrogen ion concentration of the first channel 201 is smaller than that of the second channel 202, the sub-threshold swing of the driving transistor is greater than that of the switching transistor. Sub-threshold swing, so that the driving transistor can meet the control of gray scale, and at the same time, the switching transistor has a better switching speed.

Table 1

Table 2

S270 , an array device is formed based on the channel, and the array device includes a drive transistor formed based on the first channel and a switch transistor formed based on the second channel.

S280, forming a light emitting device layer on the side of the array device away from the substrate.

On the basis of the above technical solution, when the first channel 201 is the channel of the driving transistor and the second channel 202 is the channel of the switching transistor, the first dose is less than the second dose, and the first doping energy is less than the second dose doping energy.

Specifically, in the process of fabricating the transistor, the process of the driving transistor is the same as that of the switching transistor. When the first channel 201 is the channel of the driving transistor and the second channel 202 is the channel of the switching transistor, by setting the first dose to be less than the second dose and the first doping energy to be less than the second doping energy, the The hydrogen ion concentration in the first channel 201 is smaller than the hydrogen ion concentration in the second channel 202 , so that the sub-threshold swing of the driving transistor corresponding to the first channel 201 is greater than the sub-threshold swing of the switching transistor corresponding to the second channel 202 . Threshold swing, so that the switching transistor can meet the control of gray scale, and at the same time, the driving transistor can ensure stability when driving the OLED to emit light.

Exemplarily, the range of the first dose is less than or equal to 1E+12ions/cm2, the range of the second dose is 3E+12-5E+12ions/cm2, the ranges of the first doping energy and the second doping energy are less than or Equal to 5KV. That is, by setting the first dose to be smaller than the second dose, the sub-threshold swing of the driving transistor corresponding to the first channel 201 can be greater than the sub-threshold swing of the switching transistor corresponding to the second channel 202 .

It should be noted that, in the above process, on the basis that the first dose is smaller than the second dose, the first doping energy and the second doping energy may be equal.

FIG. 10 is another method for fabricating a display panel according to an embodiment of the present invention. As shown in Figure 10, the manufacturing method of the display panel includes:

S310, providing a substrate.

S320 , forming a channel on the substrate, where the channel includes a first channel and a second channel.

S330 , forming a gate insulating layer on the side of the channel away from the substrate.

Specifically, FIG. 11 is a schematic structural diagram of a display panel corresponding to step S330 of the method for fabricating a display panel according to an embodiment of the present invention. As shown in FIG. 11 , a gate insulating layer 31 is formed on the side of the channel 20 away from the substrate 10 , and the gate insulating layer 31 is in contact with the channel 20 . The interface between the gate insulating layer 31 and the channel 20 has a dangling bond, which increases the subthreshold swing of the transistor.

S340 , setting a first mask on the side of the gate insulating layer away from the substrate, the opening area of the first mask corresponds to the first channel, and the non-open area of the first mask corresponds to the second channel.

Specifically, FIG. 12 is a manufacturing flowchart corresponding to step S340 of the manufacturing method of the display panel provided by the embodiment of the present invention. As shown in FIG. 12 , the first mask 70 is disposed on the side of the gate insulating layer 31 away from the substrate 10 . The opening area of the first mask 70 corresponds to the gate insulating layer 31 corresponding to the first channel 201 , so that hydrogen ions can be implanted into the first channel through the first mask 70 and the gate insulating layer 31 during hydrogen ion implantation 201. The non-open area of the first mask 70 corresponds to the gate insulating layer 31 corresponding to the second channel 202 , so that the implantation of hydrogen ions into the second channel 202 and the gate corresponding to the second channel 202 can be blocked during hydrogen ion implantation insulating layer 31 .

S350 , implanting hydrogen ions with a third dose and a third doping energy into the first channel.

Specifically, continuing to refer to FIG. 12 , the second channel 202 and the gate insulating layer 31 corresponding to the second channel 202 are blocked by the non-opening of the first mask 70 , the third dose and the third doping energy of hydrogen Ions are implanted into the first channel 201 . There is no hydrogen ion implantation in the second channel 202 .

S360, remove the first mask, and set a second mask on the side of the gate insulating layer away from the substrate, the opening area of the second mask corresponds to the second channel, and the non-open area of the second mask corresponds to first channel.

Specifically, FIG. 13 is a manufacturing flowchart corresponding to step S360 of the manufacturing method of the display panel provided by the embodiment of the present invention. As shown in FIG. 13 , after the implantation of hydrogen ions into the first channel 201 is completed, the first mask 70 is removed, and a second mask 80 is provided on the side of the gate insulating layer 31 away from the substrate 10 . The opening area of the second mask 80 corresponds to the gate insulating layer 31 of the second channel 202 , so that hydrogen ions can be implanted into the second channel 202 through the second mask 80 and the gate insulating layer 31 during hydrogen ion implantation . The non-open area of the second mask 80 corresponds to the gate insulating layer 31 corresponding to the first channel 201 , so that the implantation of hydrogen ions into the first channel 201 and the gate insulating layer 31 can be blocked during hydrogen ion implantation.

S370 , implanting hydrogen ions with a fourth dose and a fourth doping energy into the second channel.

Specifically, continuing to refer to FIG. 13 , the first channel 201 and the gate insulating layer 31 corresponding to the first channel 201 are blocked by the non-open region of the second mask 80 , the fourth dose and the fourth doping energy Hydrogen ions are implanted into the second channel 202 . There is no hydrogen ion implantation in the first channel 201 .

Therefore, in the above process, the hydrogen ions of the third dose and the third doping energy are implanted into the first channel 201 , and the hydrogen ions of the fourth dose and the fourth doping energy are implanted into the second channel 202 . By setting the third dose is different from the fourth dose, and the third doping energy is different from the fourth doping energy, the hydrogen ion concentration in the first channel 201 and the hydrogen ion concentration in the second channel 202 are different, so that The sub-threshold swings of the driving transistor formed by the first channel 201 and the switching transistor formed by the second channel 202 are different, so that the driving transistor can satisfy the gray scale control, and at the same time, the switching transistor has a better switching speed.

Exemplarily, Table 3 shows the electrical property levels of another driving transistor and switching transistor provided by the technical solution. It can be seen from Table 1 and Table 3 that the hydrogen ion concentration of the first channel corresponding to the driving transistor is smaller than the hydrogen ion concentration of the second channel corresponding to the switching transistor, so that the sub-threshold swing of the driving transistor is greater than that of the switching transistor. , so that the driving transistor can satisfy the gray scale control, and at the same time, the switching transistor can have a better switching speed.

In addition, as can be seen from Tables 2 and 3, when hydrogen ion implantation is performed directly into the channel, the difference between the hydrogen ion concentration in the channel of the driving transistor and the hydrogen ion concentration in the channel of the switching transistor is smaller than that of the channel through the gate insulating layer. The difference between the hydrogen ion concentration in the channel of the driving transistor and the hydrogen ion concentration in the channel of the switching transistor when the channel is implanted with hydrogen ions. Furthermore, by implanting the hydrogen ion concentration into the channel, the threshold voltage Vth of the transistor is relatively positively biased, and the channel dopant dose can be reduced in the later stage, thereby reducing the burden on the particle implantation equipment. The contact resistance RC1 between the channel of the transistor and the source-drain layer and the channel equivalent capacitance C1 are reduced as a whole, so that the contact performance of the transistor is increased.

table 3

S380, an array device is formed based on the channel, and the array device includes a drive transistor formed based on the first channel and a switch transistor formed based on the second channel.

S390 , forming a light-emitting device layer on the side of the array device away from the substrate.

On the basis of the above technical solution, when the first channel is the channel of the driving transistor and the second channel is the channel of the switching transistor, the third dose is smaller than the fourth dose, and the third doping energy is smaller than the fourth doping energy energy. Similarly, by setting the third dose to be less than the fourth dose and the third doping energy to be less than the fourth doping energy, the hydrogen ion concentration in the first channel 201 is smaller than the hydrogen ion concentration in the second channel 202, and further The sub-threshold swing of the driving transistor corresponding to the first channel 201 is greater than the sub-threshold swing of the switching transistor corresponding to the second channel 202, so that the driving transistor can satisfy the control of gray scale, and at the same time, the switching transistor has better performance. switching speed. Exemplarily, the range of the third dose is less than or equal to 1E+12ions/cm2, the range of the fourth dose is 3E+12-5E+12ions/cm2, the range of the third doping energy and the fourth doping energy is 5KV- 10KV.

It should be noted that, on the basis that the third dose is smaller than the fourth dose, the third doping energy and the fourth doping energy may be equal. In addition, the doping energy can control the movement depth of hydrogen ions along the vertical direction of the substrate, and by controlling the doping energy, the concentration of hydrogen ions in the channel 20 can be controlled. In other embodiments, the third doping energy may be set lower than the fourth doping energy, so that the hydrogen ion concentration corresponding to the first channel 201 is more stored in the gate insulating layer 31 corresponding to the first channel 201 , Therefore, the hydrogen ion concentration in the first channel 201 can be further reduced, and the sub-threshold swing of the driving transistor corresponding to the first channel 201 is larger.

FIG. 14 is another method for fabricating a display panel according to an embodiment of the present invention. As shown in Figure 14, the manufacturing method of the display panel includes:

S410, providing a substrate.

S420, forming a channel on the substrate, where the channel includes a first channel and a second channel.

S430, implanting fluorine ions into the channel.

Specifically, the channel includes fixed positive charges. By injecting fluorine ions, the fluorine ions can be coupled with the fixed positive charges in the channel to repair defects inside the channel, thereby reducing the subthreshold swing of the transistor corresponding to the channel. .

Exemplarily, when fluorine ions are implanted into the channel, the implantation dose of fluorine ions is 1E+12-2E+12 ions/cm 2 , and the doping energy is 10KV.

S440. Make the first channel and the second channel contain hydrogen ions of different concentrations.

S450 , an array device is formed based on the channel, and the array device includes a drive transistor formed based on the first channel and a switch transistor formed based on the second channel.

S460, forming a light emitting device layer on the side of the array device away from the substrate.

On the basis of the above technical solutions, a channel is formed on the substrate, including:

An amorphous silicon layer is formed on the substrate.

The amorphous silicon is dehydrogenated to form a polysilicon layer.

Specifically, when the amorphous silicon is converted into polycrystalline silicon, an annealing process is also included for realizing recrystallization.

The polysilicon layer is patterned to form channels.

Embodiments of the present invention also provide a display panel. FIG. 15 is a schematic structural diagram of a display panel according to an embodiment of the present invention. The display panel 100 is manufactured by using the manufacturing method of the display panel provided by any embodiment of the present invention.

Note that the above are only preferred embodiments of the present invention and applied technical principles. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and can also include more other equivalent embodiments without departing from the concept of the present invention. The scope is determined by the scope of the appended claims.

Claims (10)

1. A method for manufacturing a display panel is characterized by comprising the following steps:

providing a substrate;

forming a channel on the substrate, the channel including a first channel and a second channel;

performing hydrogen ion doping on the first channel and the second channel, and enabling the first channel and the second channel to contain hydrogen ions with different concentrations;

forming an array device based on the channel, the array device including a driving transistor formed based on the first channel and a switching transistor formed based on the second channel;

and forming a light-emitting device layer on one side of the array device far away from the substrate.

2. The method of claim 1, wherein doping the first channel and the second channel with hydrogen ions and allowing the first channel and the second channel to contain different concentrations of hydrogen ions comprises:

arranging a first mask on one side of the channel far away from the substrate, wherein an opening area of the first mask corresponds to the first channel, and a non-opening area of the first mask corresponds to the second channel;

implanting hydrogen ions into the first channel with a first dose and a first doping energy;

removing the first mask; arranging a second mask on one side of the channel far away from the substrate, wherein an opening area of the second mask corresponds to the second channel, and a non-opening area of the second mask corresponds to the first channel;

and implanting hydrogen ions into the second channel by using a second dosage and a second doping energy so that the concentration of the hydrogen ions in the second channel is different from that in the first channel.

3. The method of claim 2, wherein the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the first dose is less than the second dose, and the first doping energy is less than the second doping energy.

4. The method of claim 2, wherein the first dose is in a range of less than or equal to 1E +12ions/cm2, the second dose is in a range of 3E +12 to 5E +12ions/cm2, and the first doping energy and the second doping energy are in a range of less than or equal to 5 KV.

5. The method of claim 1, wherein the first channel and the second channel are made to contain different concentrations of hydrogen ions, further comprising:

forming a gate insulating layer on one side of the channel far away from the substrate;

arranging a first mask on one side, far away from the substrate, of the gate insulating layer, wherein an opening area of the first mask corresponds to the first channel, and a non-opening area of the first mask corresponds to the second channel;

implanting hydrogen ions into the first channel with a third dose and a third doping energy;

removing the first mask; arranging a second mask on one side of the gate insulating layer, which is far away from the substrate, wherein an opening area of the second mask corresponds to the second channel, and a non-opening area of the second mask corresponds to the first channel;

implanting hydrogen ions into the second channel with a fourth dose and a fourth doping energy.

6. The method of claim 5, wherein the first channel is a channel of a driving transistor, the second channel is a channel of a switching transistor, the third dose is less than the fourth dose, and the third doping energy is less than the fourth doping energy.

7. The method of claim 5, wherein the third dose is in a range of 1E +12ions/cm2 or less, the fourth dose is in a range of 3E + 12-5E +12ions/cm2, and the third doping energy and the fourth doping energy are in a range of 5KV-10 KV.

8. The method of manufacturing according to claim 1, further comprising, after forming the trench on the substrate:

and implanting fluorine ions into the channel.

9. The method of claim 8, wherein the fluorine ion implantation dose is 1E + 12-2E +12ions/cm2 and the doping energy is 10 KV.

10. A display panel produced by the method for producing a display panel according to any one of claims 1 to 9.

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