CN110802507A - Grinding head and chemical mechanical grinding equipment - Google Patents
Grinding head and chemical mechanical grinding equipment Download PDFInfo
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- CN110802507A CN110802507A CN201911095488.XA CN201911095488A CN110802507A CN 110802507 A CN110802507 A CN 110802507A CN 201911095488 A CN201911095488 A CN 201911095488A CN 110802507 A CN110802507 A CN 110802507A
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- wafer
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- retaining ring
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- 239000000126 substance Substances 0.000 title claims abstract description 17
- 238000005498 polishing Methods 0.000 claims description 103
- 238000003825 pressing Methods 0.000 claims description 11
- 230000000712 assembly Effects 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 abstract description 13
- 239000007788 liquid Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010865 sewage Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a grinding head and a chemical mechanical grinding device. The grinding head is provided with a grinding retaining ring used for limiting the wafer, the grinding retaining ring comprises a plurality of arc-shaped plates, the positions of the arc-shaped plates in the normal direction of the wafer can be adjusted within a set range, and gaps are reserved between the adjacent arc-shaped plates. When a wafer is ground, grinding byproducts and redundant grinding liquid can be discharged from a gap between two adjacent arc-shaped plates, when the grinding retaining ring is in contact with a grinding pad and is worn, the position of each arc-shaped plate in the normal direction of the wafer is adjusted within a set range, so that the depth of the gap between the adjacent arc-shaped plates can be kept within a required range, and the pollution discharge effect of the gap between the adjacent arc-shaped plates is ensured not to be worsened along with the increase of the wear amount of the grinding retaining ring. In addition, the invention also provides chemical grinding equipment which comprises the grinding head.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a grinding head and chemical mechanical grinding equipment.
Background
In the fabrication of semiconductor devices, it is often necessary to apply a polishing process to the wafer and the materials formed on the wafer to remove unwanted materials and obtain a planar surface. One polishing process that is commonly used is Chemical Mechanical Polishing (CMP).
In a conventional CMP apparatus, a polishing pad (pad) on a polishing platen is configured to rotate together with the polishing platen, a wafer is adsorbed by a polishing head (polish head), then brought into contact with the polishing pad and pressurized to rotate and move on the polishing pad, the wafer is mechanically polished by friction, and a polishing liquid is supplied onto the polishing pad by a polishing liquid supply unit (slurry delivery) to perform mechanical polishing and chemical polishing on the wafer simultaneously.
In order to prevent the wafer from sliding and flying out during polishing, a polishing head of the conventional CMP apparatus is usually provided with a polishing retaining ring having an integrated structure, so that the wafer is disposed in the polishing retaining ring during polishing to prevent the wafer from exceeding the setting range. In addition, the conventional polishing retaining ring is generally provided with a drainage groove (the opening of the groove faces the polishing pad) for draining the by-products and the excessive polishing liquid generated during polishing. However, since the bottom surface of the polishing pad is also worn during the polishing process, the grooves on the polishing retaining ring become shallow, which results in poor drainage effect, accumulation of polishing by-products and excessive slurry in the polishing retaining ring, which results in defects such as scratching of the wafer, and a decrease in polishing rate, thereby decreasing polishing efficiency.
Disclosure of Invention
The invention provides a grinding head, which solves the problems of poor grinding effect and low grinding efficiency caused by abrasion of a grinding retaining ring in the grinding process. The invention also provides chemical mechanical polishing equipment.
In order to achieve the above object, the polishing head provided by the present invention includes a polishing retaining ring, where the polishing retaining ring includes a plurality of arc-shaped plates, the arc-shaped plates are used for being spliced along a circumferential direction of a wafer during a polishing process to position the wafer, a gap is provided between two adjacent arc-shaped plates, and a position of each arc-shaped plate in a normal direction of the wafer is adjustable within a set range.
Optionally, the polishing head further includes a pressing head and a base, the pressing head is used for pressing the wafer during the polishing process, the base is located on one side of the pressing head away from the wafer and connected to the pressing head, a plurality of distance adjusting assemblies are arranged on the base, and each arc-shaped plate of the polishing retaining ring is connected to the base through the corresponding distance adjusting assembly.
Optionally, the distance adjusting assembly is a screw, and a threaded hole corresponding to the screw is formed in the surface, facing the base, of each arc-shaped plate.
Optionally, the base is further provided with a plurality of limiting plates connected to one end of each screw, which is far away from the arc-shaped plate, and each limiting plate limits the maximum distance that the corresponding screw moves towards the wafer along the wafer normal direction.
Optionally, the gap between two adjacent arc plates extends in a wafer tangential direction at a point closest to the wafer.
Optionally, the polishing head further includes an inner limiting ring and an outer limiting ring connected to the base, the polishing retaining ring is located between the inner limiting ring and the outer limiting ring, and when the position of each arc plate of the polishing retaining ring along the normal direction of the wafer is adjusted within the set range, one side surface of each arc plate away from the base protrudes out of the inner limiting ring and the outer limiting ring.
Optionally, the inner limiting ring and the outer limiting ring are flush with the surface of one side far away from the base.
Optionally, the polishing head further includes a limiting strip disposed in a gap between the arc plates, the limiting strip is attached to the base, and in the normal direction of the wafer, a distance between the limiting strip and the wafer is greater than a distance between the inner limiting ring and the wafer.
Optionally, the size of each spliced arc-shaped plate in the radial direction of the wafer is the same, and the width of the gap between any two adjacent arc-shaped plates is the same.
In another aspect, the invention further provides a chemical mechanical polishing apparatus, which includes the polishing head.
According to the grinding head provided by the invention, the grinding retaining ring arranged on the grinding head comprises a plurality of arc-shaped plates, the arc-shaped plates are spliced along the circumferential direction of a wafer in the grinding process to position the wafer, the positions of the arc-shaped plates in the normal direction of the wafer can be adjusted, and gaps are formed between the adjacent arc-shaped plates. When a wafer is ground, grinding byproducts and redundant grinding liquid can be discharged from a gap between every two adjacent arc plates, and because each arc plate is adjustable in a set range in the position in the normal direction of the wafer, when the arc plates are worn due to contact with a grinding pad, the depth of the gap between every two adjacent arc plates can be kept in a required range by timely adjusting the position of each arc plate in the normal direction of the wafer, the pollution discharge effect of the gap is prevented from being influenced by the abrasion loss of the arc plates, and the grinding effect and the grinding efficiency are improved.
The chemical mechanical polishing equipment provided by the invention comprises the polishing head, so that the chemical mechanical polishing equipment has the same or similar technical effects as the polishing head.
Drawings
FIG. 1 is a schematic cross-sectional view of a polishing head according to an embodiment of the present invention.
FIG. 2 is a schematic plan view of the polishing retaining ring, the inner retainer ring and the outer retainer ring according to an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of the polishing retaining ring of FIG. 1 after a change in position.
Description of reference numerals:
110-an arc-shaped plate;
120-gap between arc plates;
210-a base;
220-screw rod;
230-a limiting plate;
240-inner limiting ring;
240' -an outer retainer ring;
250-a limit strip;
260-pressure head;
270-slotted holes in the base;
300-a wafer;
400-polishing pad.
Detailed Description
The present invention is further described in detail with reference to the drawings and the embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
One embodiment of the present invention is directed to a polishing head. FIG. 1 is a schematic cross-sectional view of a polishing head according to an embodiment of the present invention. FIG. 2 is a schematic plan view of the polishing retaining ring, the inner retainer ring and the outer retainer ring according to an embodiment of the present invention. As shown in fig. 1 and fig. 2, in the present embodiment, the polishing head includes a polishing retaining ring, the polishing retaining ring includes a plurality of arc-shaped plates 110, the plurality of arc-shaped plates 110 are used for being spliced along the circumferential direction of the wafer 300 during the polishing process to position the wafer 300, a gap 120 is provided between two adjacent arc-shaped plates 110, and the position of each arc-shaped plate 110 in the normal direction of the wafer 300 is adjustable within a set range.
Specifically, during the polishing process, the polishing retaining ring surrounds the wafer for positioning the wafer 300, so as to prevent the wafer 300 from flying off due to inertia during polishing, prevent the bottom surface of the polishing retaining ring from sticking to the polishing pad 400, and prevent the bottom surface of the polishing retaining ring from being worn when the polishing pad 400 rotates to polish the wafer 300. Gaps 120 are formed between adjacent arc plates 110, wherein the exposed portions of the gaps 120 facing the wafer 300 are used for exhausting the polishing by-products and the excess slurry. Because the position of the arc plate 110 in the normal direction of the wafer 300 is adjustable within a set range, and the arc plate has a certain thickness, when the bottom surface of the arc plate 110 is worn to shorten the depth of the exposed part of the gap 120 towards the wafer 300, the groove for facilitating the outflow of the liquid becomes shallow, at this time, the position of the arc plate 110 in the normal direction of the wafer 300 can be adjusted to extend the corresponding gap 120 towards the exposed part of the wafer, so as to keep the depth of the exposed part of the gap 120 towards the wafer within a required range (within the range, the grinding byproducts and the surplus grinding liquid can normally flow out of the gap 120 without blocking).
In the process of grinding, the wafer is limited in the grinding retaining ring and rotates, the generated by-products and the redundant grinding fluid are thrown out in the rotating process, and the tangential direction of the wafer is the flying direction of the substances. In other embodiments, the direction of the gap between adjacent arc plates may not be set in the wafer tangential direction at the point where the gap is closest to the wafer, or a section of the gap close to the wafer may be set to extend in the wafer tangential direction at the point where the gap is closest to the wafer, and one or more sections relatively far from the wafer may form an angle with the extending direction of the section of the gap close to the wafer.
In this embodiment, the polishing retaining ring includes four arc plates 110, each arc plate 110 has the same size in the radial direction of the wafer, and the width of the gap 120 between any two adjacent arc plates 110 is the same. However, in other embodiments, the arc plates of the polishing retaining ring may be arranged in other manners, the number of the arc plates may be set to be less than four or more than four, the thickness, the radial and/or circumferential dimension of each arc plate along the wafer may also be set to be not completely the same, and the gap width between adjacent arc plates may also not be completely the same, and may be specifically set according to the process and the sewage discharge requirement.
As shown in fig. 1, the polishing head of the present embodiment further includes a pressing head 260 and a base 210, the pressing head 260 is used for pressing the wafer 300 during the polishing process, and the base 210 is located on a side of the pressing head 260 away from the wafer 300 and is connected to the pressing head 260. In addition, in order to make the position of each arc plate in the normal direction of the wafer adjustable within a set range, in this embodiment, a plurality of distance adjusting assemblies are disposed on the base 210, each arc plate of the polishing and holding ring is connected to the base 210 through a corresponding distance adjusting assembly, and the position of each arc plate 100 in the normal direction of the wafer 300 can be adjusted through the distance adjusting assemblies.
Specifically, the distance adjusting assembly in this embodiment may be a screw 220, and a surface of each arc plate 110 facing the base 210 is provided with a threaded hole corresponding to the screw 220. One end of the screw 220 is inserted into the threaded hole of the arc plate 110, the insertion depth can be fixed, and the position of the arc plate 110 in the normal direction of the wafer 300 can be adjusted by adjusting the up-and-down movement of the screw 220. However, in other embodiments, one skilled in the art can select other distance adjusting assemblies as long as the arc plate is connected to the base and the position of the arc plate in the normal direction of the wafer is adjustable.
Since the polishing retainer ring is worn away on the side facing the polishing pad as the amount of polishing of the wafer varies during polishing. FIG. 3 is a schematic cross-sectional view of the polishing retaining ring of FIG. 1 after a change in position. Specifically, as shown in fig. 1, when the grinding retaining ring is not worn (i.e., the arc plate is just put into use), the distance from the surface of the arc plate 110 facing the base 210 to the base 210 may be set to be the shortest, as shown in fig. 1, the arc plate 110 is attached to the lower surface of the base 210; as the usage time is prolonged, the surface of the arc plate 110 contacting the polishing pad is worn, the surface of the side far away from the base 210 is close to the base 210 due to the wear, the thickness of the arc plate 110 is reduced, and the depth of the gap 120 between the arc plates is correspondingly reduced. In order to keep the polishing by-products and the excess slurry discharged from the gap smoothly, the screw 220 can be adjusted to move toward the wafer, i.e., the arc plate 110 moves toward the wafer 300 along the normal direction of the wafer 300, so that the surface of the arc plate 110 close to the base 210 is separated from the base 210 by a certain distance (see fig. 3), and the depth of the exposed portion of the gap 120 between the adjacent arc plates toward the wafer 300 is maintained within a desired range.
In order to facilitate the installation of the grinding and retaining ring and further limit the positions of the arc-shaped plates of the grinding and retaining ring, the grinding head in this embodiment may further include an inner retaining ring 240 and an outer retaining ring 240 'connected to the base 210, wherein the inner retaining ring 240 and the outer retaining ring 240' are located on the same side of the base 210 (the lower surface side of the base) where the grinding and retaining ring is located. The inner retainer ring 240 and the outer retainer ring 240 'are respectively in contact with the inner and outer side surfaces of the polishing retainer ring, that is, the polishing retainer ring is located between the inner retainer ring 240 and the outer retainer ring 240', and when the position of each arc plate 110 in the normal direction of the wafer 300 is adjusted within a set range, the surface of one side of each arc plate 110 of the polishing retainer ring, which is far away from the base 210, preferably protrudes out of the inner retainer ring 240 and the outer retainer ring 240', that is, the side of the polishing retainer ring, which is towards the wafer 300, is always kept protruding out of the inner retainer ring 240 and the outer retainer ring 240'. The height of the arc plate 110 protruding the inner retainer 240 is the depth of the exposed portion of the gap 120 between the arc plates toward the wafer 300 for discharging the polishing by-products and the excess slurry, so the height of the arc plate 110 protruding the inner retainer 240 should be kept within a desired range (within which the polishing by-products and the excess slurry can flow out of the gap 120 without clogging).
By way of example, in this embodiment the inner and outer stop collars 240, 240' are flush with the surface of the side facing away from the base 210. However, in other embodiments, the surfaces of the inner and outer stop collars remote from the base may have a height difference.
The position of the arc plate in the embodiment can be adjusted within a set range, in the set range, when the arc plate moves towards the wafer along the normal direction of the wafer to the position where the arc plate is farthest away from the base, the arc plate still protrudes out of the inner limiting ring and the outer limiting ring to be contacted with the grinding pad, and the protruding height meets the pollution discharge requirement, wherein the set range is related to the thickness of the arc plate and the distance from the surface of the inner limiting ring and the outer limiting ring, which are far away from the base, to the surface of the base, which is close. If the gap pollution discharge effect meeting the requirement cannot be obtained when the set range is exceeded, the abrasion loss of the arc-shaped plate exceeds the allowable maximum value and needs to be replaced. In this embodiment, in order to limit the movement range of the arc-shaped plate, so that the maximum abrasion amount of the arc-shaped plate still protrudes out of the inner and outer limiting rings and meets the pollution discharge effect with the protruding height, the maximum distance of the arc-shaped plate moving towards the wafer can be controlled by limiting the maximum distance of the distance adjusting assembly. Specifically, the polishing head may further include a plurality of position-limiting plates 230 connected to an end of each of the screws 220 away from the arc 110, such that the position-limiting plates 230 may move along the normal direction of the wafer 300 as the screws 220 move along the normal direction of the wafer 300, and each of the position-limiting plates 230 may be used to limit the maximum distance that the corresponding screw 220 moves along the normal direction of the wafer 300 toward the wafer 300.
Further, as shown in fig. 1 and 3, the base 210 may be provided with a slot 270 corresponding to the position-limiting plate 230, and the position-limiting plate 230 may move with the screw 220 in the slot 270. By way of example, the retainer plate 230 is positioned at a height above the bottom surface of the slot 270 in the initial position (see fig. 1). As the amount of wear of the polishing retainer ring increases, the number of times the adjustment screw 220 moves toward the wafer 300 increases, and the retainer plate 230 gradually approaches the bottom surface of the slot 270. When the grinding retaining ring reaches the maximum allowable wear amount, the stopper 230 is attached to the bottom of the slot 270, and the stopper 230 is locked, as shown in fig. 3, at this time, the stopper 230 limits the movement of the screw 220 toward the wafer along the normal direction of the wafer, that is, the movement distance of the screw 220 toward the wafer 300 along the normal direction of the wafer 300 reaches the maximum value, and the arc plate 110 cannot be pushed out any more. In order to ensure that the portion of the gap 120 between the arc plates exposed towards the wafer 300 has a depth, i.e. the depth of the dirt discharge groove is within the required range, when the limiting plate is defined such that the arc plates can no longer be lowered downwards, the grinding retaining ring needs to be replaced. The invention is not limited in this regard and in other embodiments, the distance between the arcuate plate and the base may be defined by other means, such as a snap fit between the base and the distance adjustment assembly, and information may be obtained as to whether the arcuate plate needs to be replaced.
The polishing head of this embodiment can further include a stop strip 250 disposed in the gap 120 between the curved plates 110 (the position of the lower surface of the stop strip is shown by the dashed lines in fig. 1 and 3) for assisting the distance adjustment assembly to fix the adjacent curved plates 110, and in particular, the stop strip 250 can be configured to match the width of the gap 120. Preferably, the spacing strip 250 is attached to the base 210, and the distance between the spacing strip 250 and the wafer 300 is greater than the distance between the inner limiting ring 240 and the wafer 300, so as to avoid the influence on the pollution discharge effect of the gap 120.
The grinding retaining ring of the grinding head of the embodiment comprises a plurality of arc-shaped plates, the arc-shaped plates are used for being spliced along the circumferential direction of a wafer in the grinding process so as to position the wafer, the positions of the arc-shaped plates in the normal direction of the wafer can be adjusted, and gaps are reserved between the adjacent arc-shaped plates. In the process of grinding the wafer, the gap of the arc-shaped plate serves as a pollution discharge groove, the position of the arc-shaped plate in the normal direction of the wafer is adjustable, and the exposed part of the gap facing the wafer is kept at a certain height, namely the depth of the pollution discharge groove is kept at a certain depth. Therefore, the pollution discharge capacity of the arc-shaped plate gap (namely the pollution discharge groove) can be improved by adjusting the arc-shaped plate so that the arc-shaped plate does not become worse along with the increase of the abrasion quantity of the surface of the grinding retaining ring attached to the grinding pad, grinding byproducts and redundant grinding liquid can be timely and effectively discharged, the defects of wafer scratching and the like caused by the accumulation of the grinding byproducts and the redundant grinding liquid in the grinding retaining ring are avoided, meanwhile, the grinding efficiency can also be improved, the replacement frequency of the grinding retaining ring can also be reduced, and therefore the production cost is reduced.
The invention also provides chemical grinding equipment comprising the grinding head. The chemical polishing equipment can be used in the manufacturing process of various semiconductor devices so as to achieve the aim of flattening the polished surface. The chemical polishing equipment also comprises components such as a polishing pad, a polishing liquid supply unit, a polishing pad dresser and the like. During polishing, the wafer is sucked by the polishing head, then contacts with the polishing pad and is pressurized, and reciprocates and rotates on the polishing pad, and the wafer is mechanically and chemically polished by friction. Because the grinding head grinding retaining ring is arranged to comprise a plurality of arc-shaped plates, the arc-shaped plates are spliced along the circumferential direction of the wafer in the grinding process to position the wafer, and a gap is formed between every two adjacent arc-shaped plates, by-products and redundant grinding liquid generated by grinding can be discharged through the gap between the arc-shaped plates, and the position of each arc-shaped plate in the normal direction of the wafer is adjustable within a set range, the influence of the over-shallow sewage discharge groove formed at the gap on the sewage discharge capacity of the wafer can be avoided, and the grinding effect and the grinding efficiency of the chemical grinding equipment can be improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. A grinding head is characterized by comprising a grinding holding ring, wherein the grinding holding ring comprises a plurality of arc-shaped plates, the arc-shaped plates are used for being spliced along the circumferential direction of a wafer during grinding so as to position the wafer, a gap is formed between every two adjacent arc-shaped plates, and the position of each arc-shaped plate in the normal direction of the wafer is adjustable within a set range.
2. The polishing head of claim 1 further comprising a ram for pressing against said wafer during polishing and a base on a side of said ram remote from said wafer and connected to said ram, said base having a plurality of distance adjustment assemblies disposed thereon, each of said arcuate plates of said polishing retaining ring being connected to said base by a respective one of said distance adjustment assemblies.
3. The polishing head of claim 2 wherein said distance adjustment assembly is a threaded rod, and wherein the surface of each of said arcuate plates facing said base is provided with a threaded bore corresponding to said threaded rod.
4. The polishing head of claim 3 wherein said base further includes a plurality of retainer plates coupled to an end of each of said screws remote from said arcuate plate, each of said retainer plates defining a maximum distance that said respective screw moves toward said wafer in a direction normal to said wafer.
5. The polishing head of claim 1 wherein the gap between adjacent arcuate plates extends in a direction tangential to the wafer at a point closest to the wafer.
6. The polishing head of claim 1 further comprising an inner retaining ring and an outer retaining ring coupled to said base, said polishing retaining ring being disposed between said inner retaining ring and said outer retaining ring, wherein a side surface of each of said arcuate plates remote from said base protrudes beyond said inner retaining ring and said outer retaining ring when a position of each of said arcuate plates of said polishing retaining ring in a direction normal to said wafer is adjusted within said predetermined range.
7. The polishing head of claim 6, wherein a side surface of the inner stop collar and the outer stop collar distal from the base are flush.
8. The polishing head of claim 6, further comprising a stop bar disposed in a gap between said arcuate plates, said stop bar attached to said base and spaced from said wafer by a distance greater than a distance between said inner stop ring and said wafer in a direction normal to said wafer.
9. The polishing head according to any one of claims 1 to 8, wherein the size of each of said arc-shaped plates after being joined in the radial direction of said wafer is the same, and the width of the gap between any two adjacent arc-shaped plates is the same.
10. A chemical mechanical polishing apparatus comprising the polishing head of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911095488.XA CN110802507A (en) | 2019-11-11 | 2019-11-11 | Grinding head and chemical mechanical grinding equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911095488.XA CN110802507A (en) | 2019-11-11 | 2019-11-11 | Grinding head and chemical mechanical grinding equipment |
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| CN110802507A true CN110802507A (en) | 2020-02-18 |
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| CN201911095488.XA Pending CN110802507A (en) | 2019-11-11 | 2019-11-11 | Grinding head and chemical mechanical grinding equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111347345A (en) * | 2020-04-16 | 2020-06-30 | 华海清科股份有限公司 | Retaining ring and carrier head for chemical mechanical polishing |
| CN111451928A (en) * | 2020-05-15 | 2020-07-28 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN111702656A (en) * | 2020-07-04 | 2020-09-25 | 刘永 | Chemical mechanical grinding head with controllable spacing |
| CN114434321A (en) * | 2021-12-29 | 2022-05-06 | 蚌埠中光电科技有限公司 | Auxiliary frame capable of reducing grinding trace and protecting glass edge for surface grinding |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111347345A (en) * | 2020-04-16 | 2020-06-30 | 华海清科股份有限公司 | Retaining ring and carrier head for chemical mechanical polishing |
| CN111347345B (en) * | 2020-04-16 | 2020-10-16 | 华海清科股份有限公司 | Retaining ring and carrier head for chemical mechanical polishing |
| CN111451928A (en) * | 2020-05-15 | 2020-07-28 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN111702656A (en) * | 2020-07-04 | 2020-09-25 | 刘永 | Chemical mechanical grinding head with controllable spacing |
| CN111702656B (en) * | 2020-07-04 | 2021-08-17 | 林燕 | Chemical mechanical grinding head with controllable spacing |
| CN114434321A (en) * | 2021-12-29 | 2022-05-06 | 蚌埠中光电科技有限公司 | Auxiliary frame capable of reducing grinding trace and protecting glass edge for surface grinding |
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Application publication date: 20200218 |