CN110794652A - Photoetching machine system and photoetching method - Google Patents

Abstract

The invention discloses a lithography machine system and a lithography method. The lithography machine system includes a central light source module, a plurality of lithography machine hosts, a light source transmission module and a light source control module. The central light source module is connected to the light source control module through the light source transmission module. The light source control module is respectively connected to each lithography machine host through the light source transmission module. The light source control module separates the light source of the wavelength band required by the target lithography machine host from the light source provided by the central light source module, and transmits it to the target lithography machine host. , and simultaneously provide the exposure energy required by the lithography process to each target lithography machine host. The present invention transmits the light source generated by one central light source module to two or more lithography machine hosts at the same time through the light source transmission module and the light source control module, so that the required lithography process of each lithography machine host can be provided. Exposure energy, significantly improve the efficiency of the light source of the lithography machine, and reduce the import cost and maintenance cost of the lithography machine system.

Description

A lithography machine system and lithography method

technical field

The invention relates to the technical field of integrated circuit equipment manufacturing, in particular to a lithography machine system and a lithography method.

Background technique

As the design and manufacturing process of integrated circuits become more and more complex, the integrated circuit industry is facing more and more challenges. One of the challenges faced by the lithography process is the increasing The light source power of the etching platform extreme ultraviolet lithography machine (EUV) cannot meet the needs of mass production.

The architecture of the current lithography machine system is that each lithography machine host corresponds to a separate light source system. For optical table lithography machines, exposure light sources commonly used in the industry include 193nm argon fluoride excimer lasers, 248nm krypton fluoride excimer lasers, and 365nm mercury light sources. For a more advanced EUV lithography machine, the light source is EUV rays with a wavelength of about 13.5nm generated by a laser plasma source, and then optically focused to form a beam, which is reflected to the surface of the silicon wafer through a reflective mask to complete EUV exposure. .

Please refer to FIG. 1 . FIG. 1 is a schematic structural diagram of an existing method of supporting an independent light source system for each lithography machine. As shown in FIG. 1 , the individually configured light source system 21 is connected to each lithography machine host 23 through the light source transmission module 22 , and the individually configured light source system 21 provides the exposure light source, which is supplied to the lithography machine host 23 for the lithography process. . Among them, A, B, C, D, E, etc. in the figure represent different lithography machine hosts.

The semiconductor industry has been committed to reducing the use and maintenance costs of lithography machines and improving the production efficiency of lithography machines. However, the existing lithography machine system architecture in which each lithography machine host corresponds to an independent light source system poses a constraint to the goal of reducing costs and improving efficiency in the industry.

How to break through the existing platform architecture, continuously reduce the cost of lithography equipment and processes, and achieve significant breakthroughs in the power and production efficiency of EUV lithography light sources are the issues that the semiconductor industry is focusing on.

SUMMARY OF THE INVENTION

The purpose of the present invention is to overcome the above-mentioned defects in the prior art, and to provide a lithography machine system and a lithography method.

For achieving the above object, technical scheme of the present invention is as follows:

A lithography machine system includes: a central light source module, a plurality of lithography machine hosts, a light source transmission module, and a light source control module; wherein the central light source module is connected to the light source control module through the light source transmission module, The light source control module is respectively connected to each of the lithography machine hosts through the light source transmission module, and the light source control module separates the wavelength band required by the target lithography machine host from the light source provided by the central light source module. The light source control module separates the light beam from a single beam into multiple beams, and transmits them to the target lithography machine host respectively, and simultaneously provides the exposure energy required by the lithography process to each target lithography machine host.

Further, the lithography machine host includes an I-line lithography machine, a deep ultraviolet lithography machine or an extreme ultraviolet lithography machine.

Further, the light source provided by the central light source module includes a single-wavelength light source, a continuous-wavelength light source or a partial-wavelength light source.

Further, the light source control module includes a beam splitting device for separating the light source of the wavelength band required by the target lithography machine host, and the beam splitting device is also used for splitting the light beam from a single beam into multiple beams; The light source control module is also used to independently control the intensity and level of the energy and power after the beam is separated.

Further, the wavelength band required by the host process of the lithography machine includes 13.5 nm extreme ultraviolet wavelength, 193 nm deep ultraviolet wavelength, 248 nm deep ultraviolet wavelength or 365 nm wavelength.

Further, the beam splitting device is provided with a filter and a beam splitter.

Further, the central light source module includes a solid-state laser, a gas laser, a liquid laser, a semiconductor laser, a free electron laser or a synchrotron radiation light source.

Further, the central light source module meets the exposure energy requirement required by the lithography process of two or more lithography machine hosts.

Further, the light source transmission module adopts gas, vacuum or optical fiber as the light source transmission medium.

A lithography method, using the above-mentioned lithography machine system, includes the following steps:

Use the central light source module to excite, generate and output light sources;

making the light source generated by the central light source module enter the light source control module through the light source transmission module;

Filtering, beam separation and beam homogenization are performed on the light source entering the light source control module according to the light source wavelength and exposure energy requirements required by the target lithography machine host for the lithography process, and the separated light source is filtered by the light source control module. Control the intensity and level of the energy and power of the beam;

The separated and controlled multi-channel light sources are transmitted to the respective corresponding targets of the lithography machine host through the light source transmission module;

Using the light source transmitted to the target lithography machine host, the exposure process of the silicon wafer placed in the lithography machine host is completed.

It can be seen from the above technical solutions that the present invention transmits the light source generated by one central light source module to two or more lithography machine hosts at the same time through the light source transmission module and the light source control module, thereby providing each lithography machine. Compared with the existing way that each lithography machine is equipped with an independent laser light source system, the invention can significantly improve the use efficiency of the light source of the lithography machine, and reduce the cost and cost of introducing the lithography machine system. Maintenance cost; at the same time, the synchrotron radiation light source and other devices can be used as the central light source system to provide exposure energy for multiple EUV lithography machines to meet the needs of the lithography process, effectively solving the problem of insufficient exposure energy and low productivity of EUV lithography machines. The problem.

Description of drawings

FIG. 1 is a schematic structural diagram of an existing way of supporting an independent light source system for each lithography machine.

FIG. 2 is a schematic structural diagram of a lithography machine system according to a preferred embodiment of the present invention.

FIG. 3 is a schematic diagram of the structure principle of the beam splitter in the light source control module.

21. Separately configured light source system; 22. Light source transmission module; 23. Mainframe of lithography machine; 31. Beam splitter; 32. Incident light source; 33. Reflected light after beam splitting; 34. Penetration after beam splitting light; 41, central light source system; 42, light source control module; 43, light source transmission module; 44, lithography machine host.

Detailed ways

The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly represent the structure of the present invention and facilitate the description, the structures in the accompanying drawings are not drawn according to the general scale, and the Partial enlargement, deformation and simplification of processing are shown, therefore, it should be avoided to interpret this as a limitation of the present invention.

In the following specific embodiments of the present invention, please refer to FIG. 2 , which is a schematic structural diagram of a lithography machine system according to a preferred embodiment of the present invention. As shown in FIG. 2 , a lithography machine system of the present invention includes: a central light source module, multiple lithography machine hosts 44 , a light source transmission module 43 , and a light source control module 42 . The central light source module may adopt the central light source system 41 , and the light source control module 42 may adopt the light source control device 42 .

Please refer to Figure 2. The central light source system 41 is connected to the light source control module 42 through the light source transmission module 43 , and the light source control module 42 is respectively connected to each lithography machine host 44 through the light source transmission module 43 . The light source control module 42 separates the light source of the wavelength band required by the target lithography machine host 44 from the light source provided by the central light source system 41, and transmits it to the target lithography machine host (for example, A, B, and C) 44, and transmits it to each target light source. The engraving machine host 44 also provides the exposure energy required for the photolithography process.

The lithography machine host 44 may use an I-line lithography machine, a deep ultraviolet lithography machine or an extreme ultraviolet lithography machine. The lithography machine host 44 may also be other types of lithography machines. The lithography machine host 44 can be, for example, the existing lithography machine host 23 shown in FIG. 1 .

The central light source system 41 can be a single-wavelength light source system, a continuous-wavelength light source system, or a partial-wavelength light source system according to the wavelengths of the light sources provided by the central light source system 41 .

The light source control module 42 can use the beam splitting device 42 . Among them, the central light source system 41 of the continuous waveband and the central light source system 41 of the partial waveband can be separated from the light source provided by the central light source system 41 through the beam separation device and technology. At the same time, the light beam can be separated from a single beam and multiple beams, and then transmitted to the target lithography machine host 44 respectively.

Beam splitting devices and techniques may include optical components such as filters and beam splitters (beamsplitters).

Please refer to Figure 3. After the incident light source 32 passes through the beam splitter 31 , a part of the light is reflected to become the reflected light 33 after beam splitting, and a part of the light is transmitted to become the transmitted light 34 after beam splitting.

The function of the light source control module 42 at least includes the function of beam splitting for the light source output by the central light source system 41 . In addition, the role of the light source control module 42 may also include functions such as independent control of the energy and power of the separated light beams.

The wavelength band required by the process of the target lithography machine host 44 may include a 13.5 nm extreme ultraviolet wavelength, a 193 nm deep ultraviolet wavelength, a 248 nm deep ultraviolet wavelength, or a 365 nm wavelength.

The central light source system 41 may include other light source systems such as solid-state lasers, gas lasers, liquid lasers, semiconductor lasers, free electron lasers, or synchrotron radiation light sources, depending on the state of its working material.

Among them, the output power of a single central light source system 41 is greater than that of the lasers separately matched with the existing lithography machines, and a single set of central light source systems 41 can meet the exposure energy requirements of two or more lithography machines 44 .

The light source transmission medium of the light source transmission module 43 may be a medium such as gas, vacuum, or optical fiber. The light source transmission module 43 can be, for example, the existing light source transmission module 22 shown in FIG. 1 .

The central light source system 41 can be deployed near the lithography machine host 44 , or can be deployed at a position far away from the lithography machine host 44 , and is transmitted to each target lithography machine host 44 through the light source transmission module 43 .

The EUV light source can usually be realized by three technical solutions: a synchrotron radiation source, a Discharge Produced Plasma (DPP) EUV light source, and a Laser Produced Plasma (LPP) EUV light source.

What is currently being developed and basically put into mass production is an independent light source, that is, a LaserProduced Plasma (LPP) EUV light source, whose power can only reach a maximum of 250W. Due to the high absorption characteristics of EUV light (except for vacuum, all substances will absorb part of the incident EUV energy when reflecting the light source in the EUV band), so the light source power of 250W is not enough to support the productivity of 150 sheets per hour or even more than 200 sheets per hour. Require.

The synchrotron radiation light source has many advantages, such as high collimation, high polarization, high purity, high brightness, narrow pulse and accurate prediction, etc. The biggest advantage is high power. The large-scale synchrotron radiation source device can generate more than 10kW of EUV light, that is, it is 40 times the power of a single LPP EUV light source (the power of different synchrotron radiation devices is also different), so it can be used for multiple EUV exposure equipment, and at the same time. It can improve the productivity of a single EUV exposure equipment.

The present invention also provides a lithography machine architecture that uses a central light source system to centrally supply exposure energy to multiple lithography machines. A lithography method using the above lithography machine system may include the following steps:

The central light source system 41 is used to excite, generate and output high intensity, high energy light sources.

The light source generated by the central light source system 41 is made to enter the light source control module 42 through the light source transmission module 43 .

According to the light source wavelength and exposure energy requirements required by the target lithography machine host 44 to perform the lithography process, the light source entering the light source control module 42 is subjected to filtering, beam separation and beam homogenization, and the light source control module 42 separates the light source. The key indicators such as the intensity and level of the energy and power of the rear beam are controlled.

The separated and controlled multiple light sources are transmitted to the corresponding target lithography machine host 44 through the light source transmission module 43 .

After the light source transmitted to the main body 44 of the lithography machine is controlled and processed accordingly, the exposure process of the silicon wafer placed in the main body 44 of the lithography machine is completed.

Finally, the implementation of the lithography process of the present invention using the central light source system to supply the exposure energy of multiple lithography machines in a centralized manner is completed.

The above are only the preferred embodiments of the present invention, and the embodiments are not intended to limit the protection scope of the present invention. Therefore, any equivalent structural changes made by using the contents of the description and drawings of the present invention shall be included in the protection of the present invention. within the range.

Claims (10)

1. A lithography system, comprising: the system comprises a central light source module, a plurality of photoetching machines, a light source transmission module and a light source control module; the central light source module is connected with the light source control module through the light source transmission module, the light source control module is respectively connected with the photoetching hosts through the light source transmission module, the light source control module separates light sources with wave bands required by the photoetching hosts from the light source provided by the central light source module, the light source control module separates light beams from a single beam into a plurality of beams, and the beams are respectively transmitted to the photoetching hosts to provide exposure energy required by photoetching technology for the photoetching hosts.

2. The lithography system as claimed in claim 1, wherein the lithography host comprises an I-line lithography machine, a deep ultraviolet lithography machine or an extreme ultraviolet lithography machine.

3. The lithography system of claim 1 wherein the light source provided by said central light source module comprises a single band light source, a continuous band light source, or a fractional band light source.

4. The system of claim 1, wherein the light source control module comprises a beam splitter for splitting the light source of a wavelength band desired by the host computer, and for splitting the light beam from a single beam into a plurality of beams; the light source control module is also used for independently controlling the intensity and the height of the energy and the power after the light beam is separated.

5. The lithography system of claim 4, wherein the wavelength band of the lithography host process requirements includes 13.5nm extreme ultraviolet wavelength, 193nm deep ultraviolet wavelength, 248nm deep ultraviolet wavelength, or 365nm wavelength.

6. Lithography system according to claim 4, wherein the beam splitting means is provided with a filter and a beam splitter.

7. The lithography system as recited in claim 1, wherein said central light source module comprises a solid state laser, a gas laser, a liquid laser, a semiconductor laser, a free electron laser, or a synchrotron radiation light source.

8. The system of claim 1, wherein the central light source module meets the exposure energy requirements of two or more photolithography processes of the host photolithography machine.

9. The lithography system as claimed in claim 1, wherein said light source transmission module employs gas, vacuum or optical fiber as light source transmission medium.

10. A lithography method using the lithography system of any one of claims 1 through 9, comprising the steps of:

exciting, generating and outputting a light source by using a central light source module;

the light source generated by the central light source module enters the light source control module through the light source transmission module;

according to the light source wavelength and exposure energy requirement required by the target photoetching machine host machine for photoetching process, filtering, beam separation and beam homogenization are carried out on the light source entering the light source control module, and the intensity and the height of the energy and the power of the separated light beam are controlled by the light source control module;

transmitting the separated and controlled multiple paths of light sources to the photoetching machine host corresponding to each light source through the light source transmission module;

and finishing the exposure process of the silicon wafer placed in the photoetching machine host by using the light source transmitted to the target photoetching machine host.

Images