CN110794597A - Acousto-optic device with gold-tin alloy bonding layer structure and preparation method thereof - Google Patents
Acousto-optic device with gold-tin alloy bonding layer structure and preparation method thereof Download PDFInfo
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- CN110794597A CN110794597A CN201911117599.6A CN201911117599A CN110794597A CN 110794597 A CN110794597 A CN 110794597A CN 201911117599 A CN201911117599 A CN 201911117599A CN 110794597 A CN110794597 A CN 110794597A
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- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 62
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 239000010936 titanium Substances 0.000 claims abstract description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 229910015363 Au—Sn Inorganic materials 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000846 In alloy Inorganic materials 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- PILOURHZNVHRME-UHFFFAOYSA-N [Na].[Ba] Chemical compound [Na].[Ba] PILOURHZNVHRME-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical group [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Ceramic Products (AREA)
Abstract
The invention belongs to the field of acousto-optic devices, and particularly relates to an acousto-optic device with a gold-tin alloy bonding layer structure and a preparation method thereof, wherein the acousto-optic device comprises an acousto-optic crystal and a piezoelectric wafer, and the acousto-optic crystal is connected with the piezoelectric wafer through bonding; the acousto-optic crystal is characterized in that a titanium film, a titanium nitride film and a gold-tin alloy film are plated on the surface of the acousto-optic crystal in sequence; the surface of the piezoelectric wafer is plated with a titanium film, a titanium nitride film and a gold-tin alloy film in sequence; the gold-tin alloy film on the surface of the acousto-optic crystal is bonded with the gold-tin alloy film on the surface of the piezoelectric wafer; the invention has better thermal stability and chemical stability by adopting the gold-tin alloy as the welding layer, and can effectively improve the reliability of the device.
Description
Technical Field
The invention belongs to the field of acousto-optic devices, and particularly relates to an acousto-optic device with a gold-tin alloy bonding layer structure and a preparation method thereof.
Background
The acousto-optic device is a photoelectric device developed based on acousto-optic effect, and can realize the functions of modulating the intensity, phase and frequency of an optical signal, deflecting and filtering light beams and the like in a tuning mode. With the development of optoelectronic devices towards high power, high reliability, miniaturization and the like, acousto-optic devices are required to have higher power bearing capacity and higher diffraction efficiency.
The acousto-optic device mainly comprises a piezoelectric wafer, an acousto-optic crystal and a bonding layer between the piezoelectric wafer and the acousto-optic crystal, wherein the piezoelectric wafer and the acousto-optic crystal are bonded together by a diffusion bonding process or a fusion bonding process, and the structure and the bonding process of the bonding layer of the common acousto-optic device are schematically shown in fig. 1. Firstly, respectively plating bonding layers on the surfaces of the acousto-optic crystal and the piezoelectric wafer, wherein the bonding layers comprise films such as a bottom layer, a welding layer and the like, then contacting the acousto-optic crystal with the film of the welding layer of the piezoelectric wafer, and finally heating and pressurizing to complete bonding.
The conventional acousto-optic device adopts a chromium (Cr) film as a bottom layer and a tin (Sn) or tin-indium alloy (SnIn) film as a welding layer, the thickness of the film layer is more than 500nm, and the conventional process method mainly has the following problems:
1. the electric power bearing capacity of the device is low, and the maximum electric power which can be applied is 3W/mm2；
2. The welding layer is thick, the sound wave transmission loss is large, and the diffraction efficiency of the device is influenced.
3. Tin or tin-indium alloys have low melting points and poor thermal and chemical stability, which affect device reliability.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an acousto-optic device with a gold-tin alloy bonding layer structure and a preparation method thereof; the problem of low electric power bearing capacity of the device can be solved, and the diffraction efficiency and reliability of the device are improved.
The acousto-optic device with the gold-tin alloy bonding layer structure comprises an acousto-optic crystal and a piezoelectric wafer, wherein the acousto-optic crystal is connected with the piezoelectric wafer through bonding; the surface of the acousto-optic crystal and the surface of the piezoelectric wafer are respectively provided with a titanium film, a titanium nitride film and a gold-tin alloy film; and the gold-tin alloy film on the surface of the acousto-optic crystal is bonded with the gold-tin alloy film on the surface of the piezoelectric wafer.
Further, the thickness of the titanium film is 5-10 nm, the thickness of the titanium nitride film is 10-20 nm, and the thickness of the gold-tin alloy film is 20-40 nm.
Further, the mass percent of gold in the gold-tin alloy film is 70-90%, and the mass percent of tin is 10-30%.
Preferably, the mass ratio of gold in the gold-tin alloy film is 80: 20.
the invention discloses a preparation method of an acousto-optic device with a gold-tin alloy bonding layer structure, which comprises the following steps:
1) sequentially ultrasonically cleaning the acousto-optic crystal and the piezoelectric wafer by adopting acetone, absolute ethyl alcohol and deionized water;
2) treating the surfaces of the acousto-optic crystal and the piezoelectric wafer by adopting oxygen plasmas;
3) fixing the acousto-optic crystal and the piezoelectric wafer in a film coating machine respectively, and coating a titanium film, a titanium nitride film and a gold-tin alloy film on the surfaces of the acousto-optic crystal and the piezoelectric wafer respectively;
4) and contacting the gold-tin alloy film of the acousto-optic crystal with the gold-tin alloy film of the piezoelectric wafer through bonding equipment, and completing bonding through heating and pressurizing.
Preferably, the titanium film is prepared by magnetron sputtering a titanium target, and argon is used as a working gas.
Preferably, the titanium nitride film is prepared by a magnetron reactive sputtering method, and a mixed gas of argon and nitrogen is used as a working gas.
Preferably, the gold-tin alloy film is prepared by magnetron sputtering a gold-tin alloy target, and argon is used as working gas.
The invention has the beneficial effects that:
1. the acousto-optic device has the advantages of improved electric power bearing capacity and maximum applied electric power of 8W/mm2Is more than 2.5 times of the original;
2. the invention adopts an ultrathin welding layer structure (the thickness is about 1/5 of the original thickness), so that the acoustic transmission loss can be effectively reduced, and the diffraction efficiency of the device can be improved by 15-20%;
3. the melting point of the gold-tin alloy adopted by the invention is higher than that of tin by more than 40 ℃ and higher than that of tin-indium alloy by more than 50 ℃, so that the gold-tin alloy has better thermal stability and chemical stability, and can effectively improve the reliability of devices;
4. titanium nitride is used as a barrier layer, so that gold atoms can be prevented from diffusing into the acousto-optic crystal, and migration gaps are avoided.
Drawings
FIG. 1 is a schematic diagram of a bonding process of an acousto-optic device of a conventional acousto-optic device;
FIG. 2 is a schematic diagram of the bonding process of the acousto-optic device proposed by the present invention;
FIG. 3 is a flow chart of the fabrication of the acousto-optic device of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely apparent, the technical solutions in the embodiments of the present invention are described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
As shown in fig. 2, the acousto-optic device with the gold-tin alloy bonding layer structure of the invention includes an acousto-optic crystal and a piezoelectric wafer, wherein the acousto-optic crystal is connected with the piezoelectric wafer through bonding; the surface of the acousto-optic crystal is plated with a titanium Ti film, a titanium nitride TiN film and a gold-TiN alloy AuSn film in sequence; the surface of the piezoelectric wafer is plated with a titanium film, a titanium nitride film and a gold-tin alloy film in sequence; the gold-TiN alloy film on the surface of the acousto-optic crystal is bonded with the gold-TiN alloy film on the surface of the piezoelectric wafer, so that a bonding layer structure of a Ti/TiN/AuSn/AuSn/TiN/Ti six-layer film is formed after the acousto-optic device is bonded.
In one embodiment, the piezoelectric wafer is a lithium niobate wafer, a lithium tantalate wafer, a lithium cobaltate wafer, a lithium germanate wafer, a barium sodium niobate wafer, or a quartz wafer.
In one embodiment, the acousto-optic crystal is a germanium crystal, a tellurium dioxide crystal, or a gallium phosphide crystal.
Of course, the above crystals and wafers are not intended as limitations on the piezoelectric and acousto-optic crystals of the invention.
In one embodiment, the gold-tin alloy thin film is an AuSn27 thin film, that is, the mass ratio of gold Au to tin Sn is 73: 27.
in a preferred embodiment, the gold-tin alloy thin film is an AuSn20 thin film, that is, the mass ratio of gold Au to tin Sn is 80: 20, may be used in place of the tin or indium tin solder layer.
In one embodiment, the thickness of the titanium thin film is 5-10 nm, the thickness of the titanium nitride thin film is 10-20 nm, and the thickness of the gold-tin alloy thin film is 20-40 nm.
Preferably, the Ti film thickness is 8 nm; the thickness of the second TiN film is 15 nm; the thickness of the third layer of gold-tin alloy film is 30 nm.
In the invention, the gold-TiN alloy film is used as a welding layer to enable the acousto-optic crystal and the piezoelectric wafer to be in bonding connection, and the TiN is used as a barrier layer to prevent Au atoms from diffusing into the acousto-optic crystal and avoid forming migration gaps.
As an implementation manner, the manufacturing method of the acousto-optic device with the gold-tin alloy bonding layer structure according to the embodiment includes the following steps, as shown in fig. 3:
s1, ultrasonically cleaning the acousto-optic crystal and the piezoelectric wafer in sequence by adopting acetone, absolute ethyl alcohol and deionized water;
s2, processing the surfaces of the acousto-optic crystal and the piezoelectric wafer by adopting oxygen plasma;
s3, fixing the acousto-optic crystal and the piezoelectric wafer in a film plating machine respectively, and plating a titanium film, a titanium nitride film and a gold-tin alloy film on the surfaces of the acousto-optic crystal and the piezoelectric wafer respectively;
and S4, contacting the gold-tin alloy film of the acousto-optic crystal with the gold-tin alloy film of the piezoelectric wafer in a bonding mode, and heating and pressurizing to complete bonding.
In one embodiment, the titanium film, the titanium nitride film and the gold-tin alloy film are respectively plated on the surfaces of the acousto-optic crystal and the piezoelectric wafer by adopting a chemical vapor deposition method or/and a physical vapor deposition method.
In one embodiment, for the titanium-plated film, the titanium-plated film is prepared by adopting a magnetron sputtering titanium target, and before the titanium film is prepared, the acousto-optic crystal and the piezoelectric wafer are sequentially cleaned by using acetone, absolute ethyl alcohol and deionized water in an ultrasonic mode; ultrasonic cleaning for 20min to remove organic matter and other impurities on the surface of the wafer, and finally blowing with high-purity nitrogen. The sputtering power may be selected to be 200W, 225W, 250W, etc., and the working gas pressure may be selected to be 0.8Pa and the Ar flow rate may be 80 sccm.
In one embodiment, for plating the titanium nitride film, a mixed gas of argon and nitrogen is used as a working gas, and radio frequency ion plating is adopted to plate on the surface of the titanium film.
In one embodiment, the gold-tin alloy thin film is formed by directly sputtering gold-tin alloy, and the mass ratio of gold to tin of the target material is 80: 20 gold-tin alloy, the heating temperature of the cavity is 80-200 ℃, and the vacuum degree is 10-5～10-3Pa, power of 100-500W, time of 50-1000 s, wafer running speed of 50-300 cm/min, and monitoring the thickness of the sputtered film by adopting an X-Ray or step meter.
In one embodiment, the gold-tin alloy film of the acousto-optic crystal is contacted with the gold-tin alloy film of the piezoelectric wafer through bonding equipment, and the bonding is completed through heating and pressurizing. In the bonding process, the interface atoms are further rapidly diffused under the heating action, and the bonding purpose is finally achieved.
In one embodiment, the bonding pressure is 1-20 MPa, the bonding temperature is 100-250 ℃, and the bonding time is 20-60 min.
The gold-tin alloy welding layer prepared by the method is uniform and compact, high in heat conductivity and electric conductivity and good in stability, the problem of low electric power bearing capacity of a device can be solved, and the diffraction efficiency and reliability of the device are improved.
In the description of the present invention, it is to be understood that the terms "surface", "above", "inside", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
Those skilled in the art will appreciate that all or part of the steps in the methods of the above embodiments may be implemented by associated hardware instructed by a program, which may be stored in a computer-readable storage medium, and the storage medium may include: ROM, RAM, magnetic or optical disks, and the like.
The above-mentioned embodiments, which further illustrate the objects, technical solutions and advantages of the present invention, should be understood that the above-mentioned embodiments are only preferred embodiments of the present invention, and should not be construed as limiting the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The acousto-optic device with the gold-tin alloy bonding layer structure comprises an acousto-optic crystal and a piezoelectric wafer, wherein the acousto-optic crystal is connected with the piezoelectric wafer through bonding; the acousto-optic crystal is characterized in that a titanium film, a titanium nitride film and a gold-tin alloy film are plated on the surface of the acousto-optic crystal in sequence; the surface of the piezoelectric wafer is plated with a titanium film, a titanium nitride film and a gold-tin alloy film in sequence; and the gold-tin alloy film on the surface of the acousto-optic crystal is bonded with the gold-tin alloy film on the surface of the piezoelectric wafer.
2. The acousto-optic device of claim 1, wherein the thickness of the titanium thin film is 5-10 nm, the thickness of the titanium nitride thin film is 10-20 nm, and the thickness of the gold-tin alloy thin film is 20-40 nm.
3. The acousto-optic device of a au-sn alloy bonding layer structure according to claim 1 or 2, wherein the au accounts for 70-90% by mass of the au-sn alloy thin film, and the sn accounts for 10-30% by mass of the sn.
4. A preparation method of an acousto-optic device with a gold-tin alloy bonding layer structure is characterized by comprising the following steps:
1) sequentially ultrasonically cleaning the acousto-optic crystal and the piezoelectric wafer by adopting acetone, absolute ethyl alcohol and deionized water;
2) treating the surfaces of the acousto-optic crystal and the piezoelectric wafer by adopting oxygen plasmas;
3) fixing the acousto-optic crystal and the piezoelectric wafer in a film coating machine respectively, and coating a titanium film, a titanium nitride film and a gold-tin alloy film on the surfaces of the acousto-optic crystal and the piezoelectric wafer respectively;
4) and contacting the gold-tin alloy film of the acousto-optic crystal with the gold-tin alloy film of the piezoelectric wafer through bonding equipment, and completing bonding through heating and pressurizing.
5. The method for manufacturing an acousto-optic device with a gold-tin alloy bonding layer structure according to claim 4, wherein the titanium thin film is manufactured by magnetron sputtering a titanium target, and argon is used as a working gas.
6. The method for manufacturing an acousto-optic device having a Au-Sn alloy bonding layer structure according to claim 4, wherein the titanium nitride film is manufactured by a magnetron sputtering method, and a mixed gas of argon and nitrogen is used as a working gas.
7. The method for manufacturing an acousto-optic device with a gold-tin alloy bonding layer structure according to claim 4, wherein the gold-tin alloy thin film is manufactured by magnetron sputtering a gold-tin alloy target, and argon is used as a working gas.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115449765A (en) * | 2022-09-19 | 2022-12-09 | 苏州博志金钻科技有限责任公司 | Method for preparing gold-tin solder film by co-sputtering |
| CN115693387A (en) * | 2022-11-09 | 2023-02-03 | 西安智慧谷科技研究院有限公司 | A method for mutually plating gold-tin thin films on heat sink and chip |
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| US4077558A (en) * | 1976-12-06 | 1978-03-07 | International Business Machines Corporation | Diffusion bonding of crystals |
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Cited By (3)
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| CN115693387A (en) * | 2022-11-09 | 2023-02-03 | 西安智慧谷科技研究院有限公司 | A method for mutually plating gold-tin thin films on heat sink and chip |
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