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CN110783278B - Power semiconductor module substrate - Google Patents

Power semiconductor module substrate Download PDF

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Publication number
CN110783278B
CN110783278B CN201911065926.8A CN201911065926A CN110783278B CN 110783278 B CN110783278 B CN 110783278B CN 201911065926 A CN201911065926 A CN 201911065926A CN 110783278 B CN110783278 B CN 110783278B
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China
Prior art keywords
groups
power semiconductor
semiconductor module
substrates
piece
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CN201911065926.8A
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CN110783278A (en
Inventor
韩波
刘天宇
冯建鑫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hans Semiconductor Jiangsu Co ltd
Hanyu Microsensors (Jiangsu) Co.,Ltd.
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Hans Automation Technology Jiangsu Co ltd
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Publication of CN110783278A publication Critical patent/CN110783278A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

The invention relates to the technical field of power semiconductor modules, and discloses a power semiconductor module substrate, which comprises two groups of substrates and is characterized in that: the two groups of substrates are mechanically connected through the sliding part, the two groups of substrates are electrically connected through the flexible circuit board, the two groups of substrates are mechanically and electrically connected to form a group of semiconductor modules, the upper surface of the substrates is covered with the second metal coating, and the lower surface of the substrates is covered with the first metal coating. This power semiconductor module substrate through slider and spout sliding connection to the slider is provided with the deformation piece, and the deformation piece is the elastic metal piece, makes the connection between multiunit substrate in the power semiconductor module have certain expansion space, has reduced the cracked probability in junction, has improved the stability of connecting between the power semiconductor module, can not produce crease or fracture to it when crooked 90 through the deformation piece, has improved the connectivity of slider.

Description

Power semiconductor module substrate
Technical Field
The invention relates to the technical field of power semiconductor modules, in particular to a power semiconductor module substrate.
Background
The power semiconductor module is a combination body according to certain functions and modes, the power semiconductor module combines various electronic power devices according to certain functions and then is encapsulated into a whole, the power semiconductor module can realize different functions according to different packaged components, in the common power semiconductor module, a plurality of carrier substrates are mostly arranged in a plane on a flat cooling body or a bottom plate, and power semiconductors such as IGBT, diode, FET, thyristor and the like are arranged on the substrates. The connection between the common power semiconductor module substrates adopts the matching of the clamping blocks and the clamping grooves, so that a plurality of groups of power semiconductor module substrates are connected in the space. The connection between the power semiconductor module substrates in the market at present is rigid connection, and the connection part is easy to break due to thermal expansion and cold contraction.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the invention provides the power semiconductor module substrate, which has the advantages that the connection among a plurality of groups of power semiconductor modules has a certain expansion space, the fracture probability of the connection part is reduced, the connection stability among the power semiconductor modules is improved, and the like, and solves the problems that the connection among the power semiconductor module substrates in the current market is rigid connection and the connection part is easy to fracture due to thermal expansion and cold contraction.
(II) technical scheme
In order to realize the purposes that the connection among the power semiconductor modules has a certain expansion space, the fracture probability of the connection part is reduced, and the connection stability among the power semiconductor modules is improved, the invention provides the following technical scheme: a power semiconductor module substrate comprising two groups of substrates, characterized in that: the two groups of substrates are mechanically connected through the sliding part, the two groups of substrates are electrically connected through the flexible circuit board, the two groups of substrates are mechanically and electrically connected to form a group of semiconductor modules, the upper surface of the substrates is covered with the second metal coating, and the lower surface of the substrates is covered with the first metal coating.
Preferably, the substrate comprises a substrate base layer, a contact groove is formed in one side of the substrate base layer, sliding grooves are formed in two groups of opposite side surfaces of the contact groove, the sliding grooves are in sliding connection with the sliding piece, a semiconductor device contact is arranged on the surface of the contact groove, and the semiconductor device contact on the surface of the contact groove is electrically connected with the flexible circuit board.
Preferably, the sliding piece comprises two groups of connecting pieces, two groups of opposite side surfaces in four groups of side surfaces of the connecting pieces are fixedly connected with sliding blocks, the sliding blocks are in sliding connection with the sliding grooves, the connecting pieces are in contact with the bottoms of the contact grooves, deformation pieces are rigidly connected to opposite surfaces of the connecting pieces, which are in contact with the bottoms of the contact grooves, of the connecting pieces, and two groups of connecting pieces are connected at two ends of the deformation pieces.
Preferably, the surface of the connecting piece can be provided with extension pieces, and when the surface of the connecting piece is provided with extension pieces, two ends of the deformation piece are respectively connected with the two groups of extension pieces.
Preferably, the surfaces of the first metallization and the second metallization are each provided with a semiconductor device, and terminals of the semiconductor devices are electrically connected to semiconductor device contacts contacting the surfaces of the grooves.
Preferably, the deformation member is an elastic metal sheet, and the deformation member does not crease or break when bent by 90 degrees.
Preferably, the height of the extension is related to the distance between two groups of substrates in the semiconductor module and the resulting spatial angle.
(III) beneficial effects
Compared with the prior art, the invention provides the power semiconductor module substrate, which has the following beneficial effects:
1. this power semiconductor module substrate through slider and spout sliding connection to the slider is provided with the deformation piece, and the deformation piece is the elastic metal piece, makes the connection between multiunit substrate in the power semiconductor module have certain expansion space, has reduced the cracked probability in junction, has improved the stability of connecting between the power semiconductor module, can not produce crease or fracture to it when crooked 90 through the deformation piece, has improved the connectivity of slider.
2. According to the power semiconductor module substrate, the extending pieces can be arranged on the surface of the connecting piece, when the extending pieces are arranged on the surface of the connecting piece, two ends of the deforming piece are respectively connected with the two groups of extending pieces, so that multiple groups of substrates in the power semiconductor module are easy to connect in a three-dimensional space, and the convenience in use and installation of the power semiconductor module substrate is improved.
3. According to the power semiconductor module substrate, the flexible circuit boards are adopted to be electrically connected among the multiple groups of substrates in the power semiconductor module, so that the electrical connection among the power semiconductor module substrates is stable, the influence of substrate movement on circuit stability is reduced, and the use safety of the power semiconductor module substrate is improved.
Drawings
Fig. 1-2 are schematic views of a power semiconductor module substrate structure according to the present invention;
FIG. 3 is a schematic view of a substrate structure according to the present invention;
fig. 4 is a schematic view of a sliding member according to the present invention.
In the figure: 1. a substrate; 101. a substrate base layer; 102. a contact groove; 103. a chute; 2. a flexible circuit board; 3. a slider; 301. a connecting sheet; 302. a slide block; 303. a deforming member; 304. an extension member; 4. a first metallization layer; 5. a second metallization layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 4, a power semiconductor module substrate includes two groups of substrates 1, which are characterized in that: two groups of substrates 1 are mechanically connected through a sliding part 3, the two groups of substrates 1 are electrically connected through a flexible circuit board 2, the substrate 1 comprises a substrate base layer 101, one side of the substrate base layer 101 is provided with a contact groove 102, two groups of opposite sides of the contact groove 102 are provided with sliding grooves 103, the sliding grooves 103 are in sliding connection with the sliding part 3, the surfaces of the contact groove 102 are provided with semiconductor device contacts, the semiconductor device contacts on the surfaces of the contact groove 102 are electrically connected with the flexible circuit board 2, the plurality of groups of substrates 1 in the power semiconductor module are electrically connected through the flexible circuit board 2, the electric connection between the substrates of the power semiconductor module is stable, the influence of the movement of the substrate 1 on circuit stability is reduced, the use safety of the power semiconductor module substrate is improved, the sliding part 3 comprises two groups of connecting sheets 301, two groups of opposite sides of the four groups of sides of the connecting sheets 301 are fixedly connected with a sliding block 302, the sliding block 302 is slidingly connected with the sliding groove 103, the connecting piece 301 is contacted with the bottom of the contact groove 102, the deformation piece 303 is rigidly connected with the opposite surface of the connecting piece 301 contacted with the bottom of the contact groove 102, two ends of the deformation piece 303 connect the two groups of connecting pieces 301, the surface of the connecting piece 301 can be provided with extension pieces 304, when the surface of the connecting piece 301 is provided with the extension pieces 304, two ends of the deformation piece 303 are respectively connected with the two groups of extension pieces 304, the height of the extension pieces 304 is related to the distance between the two groups of substrates 1 in the semiconductor module and the formed space angle, the extension pieces 304 can be arranged on the surface of the connecting piece 301, when the surface of the connecting piece 301 is provided with the extension pieces 304, two ends of the deformation piece 303 are respectively connected with the two groups of extension pieces 304, so that the connection between the multiple groups of substrates 1 in the power semiconductor module is easier in three-dimensional space, the convenience of using and installing the power semiconductor module substrate is improved, the deformation piece 303 is an elastic metal sheet, no crease or fracture is generated on the deformation piece 303 when the deformation piece 303 is bent for 90 degrees, the connection capability of the sliding piece 3 is improved, the power semiconductor module substrate is slidably connected with the sliding groove 103 through the sliding piece 3, the deformation piece 303 is arranged on the sliding piece 3, the deformation piece 303 is an elastic metal sheet, the connection between a plurality of groups of substrates 1 in the power semiconductor module is provided with a certain expansion space, the fracture probability of a connection part is reduced, the connection stability between the power semiconductor modules is improved, a group of semiconductor modules is formed by mechanically and electrically connecting two groups of substrates 1, the upper surface of the substrate 1 is covered with the second metal coating 5, the lower surface of the substrate 1 is covered with the first metal coating 4, the surfaces of the first metal coating 4 and the second metal coating 5 are respectively provided with a semiconductor device, and the terminals of the semiconductor device are electrically connected with the semiconductor device contacts on the surfaces of the contact grooves 102.
The electrical components are all connected with an external main controller and 220V mains supply, and the main controller can be conventional known equipment for controlling a computer and the like.
When the three-dimensional deformation device is used, the multiple groups of substrates 1 can be located on the same horizontal plane or not located on the same horizontal plane in the three-dimensional space, when the multiple groups of substrates 1 are located on the same horizontal plane, two ends of the deformation piece 303 are distributed and connected with the two groups of connection pieces 301, expansion deformation of the substrates 1 enables the connection pieces 301, the sliding blocks 302 and the sliding grooves 103 to slide, and further the deformation piece 303 is deformed to offset deformation of the substrates 1, and when the multiple groups of substrates 1 are not located on the same horizontal plane, two ends of the deformation piece 303 are distributed and connected with the two groups of extension pieces 304.
In summary, this power semiconductor module substrate, sliding connection with spout 103 through slider 3, and slider 3 is provided with deformation 303, deformation 303 is the elastic metal sheet, make the connection between multiunit substrate 1 in the power semiconductor module have certain expansion space, the cracked probability of connection position has been reduced, the stability of connection between the power semiconductor module has been improved, can not produce crease or fracture to it when crooked 90 ° through deformation 303, the connectivity of slider 3 has been improved, can be provided with extension 304 through the surface of connection piece 301, when the surface of connection piece 301 was provided with extension 304, the both ends of deformation 303 are connected with two sets of extension 304 respectively, make the connection between multiunit substrate 1 in the power semiconductor module in three-dimensional space relatively easily, the convenience of power semiconductor module substrate use and installation has been improved, adopt flexible circuit board 2 electric connection between multiunit substrate 1 in the power semiconductor module, make the electric connection between the power semiconductor module substrate comparatively stable, and the influence that the power semiconductor module substrate 1 removal has to the stable influence of circuit has been reduced, the security of power semiconductor module substrate has been improved.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (6)

1. A power semiconductor module substrate comprising two groups of substrates (1), characterized in that: the two groups of substrates (1) are mechanically connected through a sliding part (3), the two groups of substrates (1) are electrically connected through a flexible circuit board (2), the two groups of substrates (1) are mechanically connected and electrically connected to form a group of semiconductor modules, the upper surface of the substrate (1) is covered with a second metal coating (5), and the lower surface of the substrate (1) is covered with a first metal coating (4);
the sliding piece (3) comprises two groups of connecting pieces (301), two groups of opposite sides of the four groups of sides of the connecting pieces (301) are fixedly connected with sliding blocks (302), the sliding blocks (302) are in sliding connection with the sliding grooves (103), the connecting pieces (301) are in contact with the bottoms of the contact grooves (102), deformation pieces (303) are rigidly connected to the opposite faces of the surfaces of the connecting pieces (301) which are in contact with the bottoms of the contact grooves (102), and two ends of the deformation pieces (303) are used for connecting the two groups of connecting pieces (301).
2. The power semiconductor module substrate according to claim 1, wherein: the substrate (1) comprises a substrate base layer (101), a contact groove (102) is formed in one side of the substrate base layer (101), sliding grooves (103) are formed in two groups of opposite side surfaces of the contact groove (102), the sliding grooves (103) are in sliding connection with a sliding piece (3), semiconductor device contacts are arranged on the surface of the contact groove (102), and the semiconductor device contacts on the surface of the contact groove (102) are electrically connected with a flexible circuit board (2).
3. The power semiconductor module substrate according to claim 1, wherein: the surface of the connecting piece (301) is provided with an extending piece (304), and when the surface of the connecting piece (301) is provided with the extending piece (304), two ends of the deforming piece (303) are respectively connected with two groups of extending pieces (304).
4. The power semiconductor module substrate according to claim 1, wherein: the surfaces of the first metal coating layer (4) and the second metal coating layer (5) are provided with semiconductor devices, and terminals of the semiconductor devices are electrically connected with semiconductor device contacts on the surfaces of the contact grooves (102).
5. The power semiconductor module substrate according to claim 1, wherein: the deformation piece (303) is an elastic metal sheet, and the deformation piece (303) cannot be creased or broken when being bent for 90 degrees.
6. A power semiconductor module substrate according to claim 3, characterized in that: the height of the extension (304) is related to the distance between two groups of substrates (1) in the semiconductor module and the spatial angle formed.
CN201911065926.8A 2019-11-04 2019-11-04 Power semiconductor module substrate Active CN110783278B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911065926.8A CN110783278B (en) 2019-11-04 2019-11-04 Power semiconductor module substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911065926.8A CN110783278B (en) 2019-11-04 2019-11-04 Power semiconductor module substrate

Publications (2)

Publication Number Publication Date
CN110783278A CN110783278A (en) 2020-02-11
CN110783278B true CN110783278B (en) 2023-05-12

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6302705B1 (en) * 2000-06-22 2001-10-16 Cray Inc. Electrical circuit connector with support
CN101616557A (en) * 2008-06-27 2009-12-30 国产电机株式会社 Onboard electric power control device
CN102832191A (en) * 2011-06-17 2012-12-19 三星电机株式会社 Power module package and system module having the same
CN102903681A (en) * 2011-07-29 2013-01-30 英飞凌科技股份有限公司 Flexible connection of substrate in power semiconductor module
CN106340513A (en) * 2015-07-09 2017-01-18 台达电子工业股份有限公司 Power module of integrated control circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6302705B1 (en) * 2000-06-22 2001-10-16 Cray Inc. Electrical circuit connector with support
CN101616557A (en) * 2008-06-27 2009-12-30 国产电机株式会社 Onboard electric power control device
CN102832191A (en) * 2011-06-17 2012-12-19 三星电机株式会社 Power module package and system module having the same
CN102903681A (en) * 2011-07-29 2013-01-30 英飞凌科技股份有限公司 Flexible connection of substrate in power semiconductor module
CN106340513A (en) * 2015-07-09 2017-01-18 台达电子工业股份有限公司 Power module of integrated control circuit

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Address after: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee after: Hans semiconductor (Jiangsu) Co.,Ltd.

Country or region after: China

Address before: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee before: Hans Automation Technology (Jiangsu) Co.,Ltd.

Country or region before: China

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Effective date of registration: 20240517

Address after: Room 208C, Building A5, Science and Technology Industrial Park, North of Pei Road and East of Hanrun Road, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province, 221000

Patentee after: Hanyu Microsensors (Jiangsu) Co.,Ltd.

Country or region after: China

Address before: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee before: Hans semiconductor (Jiangsu) Co.,Ltd.

Country or region before: China