[go: up one dir, main page]

CN110767641A - A high-power LED device - Google Patents

A high-power LED device Download PDF

Info

Publication number
CN110767641A
CN110767641A CN201911249106.4A CN201911249106A CN110767641A CN 110767641 A CN110767641 A CN 110767641A CN 201911249106 A CN201911249106 A CN 201911249106A CN 110767641 A CN110767641 A CN 110767641A
Authority
CN
China
Prior art keywords
substrate
substrates
led chip
led device
high power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911249106.4A
Other languages
Chinese (zh)
Inventor
张炳忠
刘新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Runwo Automation Engineering Co Ltd
Original Assignee
Shenzhen Runwo Automation Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Runwo Automation Engineering Co Ltd filed Critical Shenzhen Runwo Automation Engineering Co Ltd
Priority to CN201911249106.4A priority Critical patent/CN110767641A/en
Publication of CN110767641A publication Critical patent/CN110767641A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8581Means for heat extraction or cooling characterised by their material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8585Means for heat extraction or cooling being an interconnection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

本发明公开了一种大功率LED装置,包括若干个基板,与基板电性连接的LED芯片,及用于对若干个基板相互绝缘的绝缘片;所述绝缘片设置于基板外侧,以使相邻基板之间相互绝缘;所述基板与电源连接,以使LED芯片导通。本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。

Figure 201911249106

The invention discloses a high-power LED device, comprising several substrates, LED chips electrically connected to the substrates, and insulating sheets for insulating the several substrates from each other; Adjacent substrates are insulated from each other; the substrates are connected to a power source to make the LED chips conduct. In the present invention, the LED chip is directly welded on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current drive can be increased to 1.5 times, and the driveable power is significantly improved.

Figure 201911249106

Description

一种大功率LED装置A high-power LED device

技术领域technical field

本发明涉及LED技术领域,更具体地说是一种大功率LED装置。The present invention relates to the technical field of LEDs, and more particularly to a high-power LED device.

背景技术Background technique

现有大功率LED COB的封装,通常是将LED封装到基板上(包括铝、铜、氮化铝等种类的基板),然后将基板固定在散热组件上,散热组件将LED工作时产生的热量通过热传导的方式传递给散热介质,达到LED的散热冷却效果。由于基板绝缘层以及散热组件与基板间的导热系数低,导致最终LED热传导效率十分低下,如果希望在单位发光面积上的LED以更高的功率工作,则需要提高LED与散热组件之间的导热系数,提高散热效率。The existing high-power LED COB package is usually to package the LED on a substrate (including aluminum, copper, aluminum nitride and other types of substrates), and then fix the substrate on the heat dissipation component, and the heat dissipation component dissipates the heat generated by the LED during operation. It is transferred to the heat dissipation medium by means of heat conduction to achieve the heat dissipation and cooling effect of the LED. Due to the low thermal conductivity between the insulating layer of the substrate and the heat dissipation component and the substrate, the thermal conduction efficiency of the final LED is very low. If you want the LED on a unit light emitting area to work with higher power, it is necessary to improve the thermal conductivity between the LED and the heat dissipation component. coefficient to improve heat dissipation efficiency.

还有现有的基板用于比较单一,只是单单用来给LED芯片导热,不能作为其它用途,从而使得LED装置的结构较为复杂。There are also existing substrates that are used for a relatively single purpose, and are only used to conduct heat for the LED chip, and cannot be used for other purposes, which makes the structure of the LED device more complicated.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于克服现有技术的不足,提供一种大功率LED装置。The purpose of the present invention is to overcome the deficiencies of the prior art and provide a high-power LED device.

为实现上述目的,本发明采用以下技术方案:To achieve the above object, the present invention adopts the following technical solutions:

一种大功率LED装置,包括若干个基板,与基板电性连接的LED芯片,及用于对若干个基板相互绝缘的绝缘片;所述绝缘片设置于基板外侧,以使相邻基板之间相互绝缘;所述基板与电源连接,以使LED芯片导通。A high-power LED device includes several substrates, LED chips electrically connected to the substrates, and insulating sheets used to insulate the several substrates from each other; Insulated from each other; the base plate is connected with the power source to make the LED chip conduct.

其进一步技术方案为:所述基板包括与电源正极连接的正极基板,与电源负极连接的负极基板;所述LED芯片的一接线端与正极基板或负极基板连接,另一接线端与负极基板或正极基板连接。Its further technical scheme is: the substrate includes a positive substrate connected to the positive electrode of the power supply, and a negative substrate connected to the negative electrode of the power supply; one terminal of the LED chip is connected to the positive substrate or the negative substrate, and the other terminal is connected to the negative substrate or the negative substrate. Positive substrate connection.

其进一步技术方案为:所述正极基板与负极基板相互叠加设置,并且正极基板与负极基板之间通过绝缘片绝缘。Its further technical scheme is that: the positive electrode substrate and the negative electrode substrate are superimposed on each other, and the positive electrode substrate and the negative electrode substrate are insulated by an insulating sheet.

其进一步技术方案为:所述基板为铜板;所述铜板外侧设有镀金层。Its further technical scheme is as follows: the base plate is a copper plate; the outer side of the copper plate is provided with a gold-plated layer.

其进一步技术方案为:所述LED芯片设于基板的端面;所述LED芯片通过锡膏焊接于正极基板或负极基板的端面,以形成一接线端,且LED芯片的另一接线端通过导线与相邻的负极基板或正极基板连接。Its further technical scheme is: the LED chip is arranged on the end face of the substrate; the LED chip is welded to the end face of the positive electrode substrate or the negative electrode substrate by solder paste to form a terminal, and the other terminal of the LED chip is connected with the wire through the wire. Adjacent negative electrode substrates or positive electrode substrates are connected.

其进一步技术方案为:所述正极基板设有凸起部;所述负极基板设有凹陷部;所述正极基板与负极基板相互叠合时,所述凹陷部与所述凸起部相互匹配。A further technical solution is: the positive electrode substrate is provided with a convex portion; the negative electrode substrate is provided with a concave portion; when the positive electrode substrate and the negative electrode substrate are overlapped with each other, the concave portion and the convex portion match each other.

其进一步技术方案为:若干个所述基板外侧相互叠加,并向横向延展,以使若干个基板的两侧形成安装平面;所述安装平面设有散热板。Its further technical scheme is as follows: the outer sides of a plurality of the substrates are superimposed on each other and extend laterally, so that two sides of the plurality of substrates form an installation plane; the installation plane is provided with a heat dissipation plate.

其进一步技术方案为:所述LED芯片的外侧设有光学组件。Its further technical scheme is: an optical component is arranged on the outer side of the LED chip.

其进一步技术方案为:所述基板远于LED芯片的一端设有固定座,以使若干个基板相互固定。A further technical solution is that: the end of the substrate farther from the LED chip is provided with a fixing seat, so that several substrates are fixed to each other.

其进一步技术方案为:所述基板远于LED芯片一端设有二个接线头;其中,一接线头与正极基板连接,另一接线头与负极基板连接。Its further technical scheme is: the substrate is provided with two terminals at one end farther from the LED chip; wherein one terminal is connected to the positive substrate, and the other terminal is connected to the negative substrate.

本发明与现有技术相比的有益效果是:本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。Compared with the prior art, the present invention has the beneficial effects that the present invention directly welds the LED chip on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current driving can be increased to 1.5 times, and the drivable power can be significantly improved.

上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明技术手段,可依照说明书的内容予以实施,并且为了让本发明的上述和其它目的、特征及优点能够更明显易懂,以下特举较佳实施例,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to understand the technical means of the present invention more clearly, it can be implemented in accordance with the content of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable, the following A preferred embodiment is given, and the detailed description is as follows.

附图说明Description of drawings

图1为本发明的一种大功率LED装置的立体结构图;1 is a three-dimensional structural view of a high-power LED device according to the present invention;

图2为本发明的一种大功率LED装置的侧视图;2 is a side view of a high-power LED device of the present invention;

图3为本发明的一种大功率LED装置的去掉部分散热器的立体结构图及局部放大图;3 is a three-dimensional structural view and a partial enlarged view of a high-power LED device of the present invention with a part of the radiator removed;

图4为本发明的一种大功率LED装置的基板的装配图及局部放大图。4 is an assembly view and a partial enlarged view of a substrate of a high-power LED device according to the present invention.

具体实施方式Detailed ways

为了使本发明的目的、技术方案及优点更加清楚明白,下面结合附图和具体实施方式对本发明作进一步详细说明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention.

在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore It should not be construed as a limitation of the present invention.

此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined.

在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise expressly specified and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense, for example, it may be a connection or a detachable connection, It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two elements or the interaction relationship between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不应理解为必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。此外,本领域的技术人员可以将本说明书中描述的不同实施例或示例进行结合和组合。In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be construed as necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

图纸1至4为本发明的图纸。Drawings 1 to 4 are drawings of the present invention.

本实施提供了一种大功率LED装置,请参阅图1至3,包括若干个基板10,与基板10电性连接的LED芯片11,及用于对若干个基板10相互绝缘的绝缘片12。绝缘片12设置于基板10外侧,以使相邻基板10之间相互绝缘。基板10与电源连接,以使LED芯片11导通。绝缘片12包裹在基板10外侧,使得基板10绝缘。This embodiment provides a high-power LED device, please refer to FIGS. 1 to 3 , including a plurality of substrates 10 , LED chips 11 electrically connected to the substrates 10 , and insulating sheets 12 for insulating the substrates 10 from each other. The insulating sheet 12 is disposed outside the substrates 10 to insulate adjacent substrates 10 from each other. The substrate 10 is connected to a power source so that the LED chips 11 are turned on. The insulating sheet 12 is wrapped around the outside of the substrate 10 to insulate the substrate 10 .

其中,绝缘片12可以是树脂或其他能够将相邻基板10粘结在一起的绝缘材料。The insulating sheet 12 may be resin or other insulating materials capable of bonding the adjacent substrates 10 together.

请参阅图1至3,基板10包括与电源正极连接的正极基板101,与电源负极连接的负极基板102。LED芯片11的一接线端与正极基板101或负极基板102连接,另一接线端与负极基板102或正极基板101连接。LED芯片11连接在正极基板101与负极基板102之间,以使形成回路。Referring to FIGS. 1 to 3 , the substrate 10 includes a positive electrode substrate 101 connected to the positive electrode of the power source, and a negative electrode substrate 102 connected to the negative electrode of the power source. One terminal of the LED chip 11 is connected to the positive electrode substrate 101 or the negative electrode substrate 102 , and the other terminal is connected to the negative electrode substrate 102 or the positive electrode substrate 101 . The LED chip 11 is connected between the positive electrode substrate 101 and the negative electrode substrate 102 so as to form a circuit.

正极基板101与负极基板102相互叠加设置,并且正极基板101与负极基板102之间通过绝缘片12绝缘。The positive electrode substrate 101 and the negative electrode substrate 102 are disposed on top of each other, and the positive electrode substrate 101 and the negative electrode substrate 102 are insulated by the insulating sheet 12 .

LED芯片11设于基板10的端面。LED芯片11通过锡膏焊接于正极基板101或负极基板102的端面,以形成一接线端,且LED芯片11的另一接线端通过导线与相邻的负极基板102或正极基板101连接。负极基板102与正极基板101下端通过螺钉固定,以使负极基板102与正极基板101相互叠合后形成一整体。The LED chip 11 is provided on the end surface of the substrate 10 . The LED chip 11 is soldered to the end surface of the positive substrate 101 or the negative substrate 102 by solder paste to form a terminal, and the other terminal of the LED chip 11 is connected to the adjacent negative substrate 102 or the positive substrate 101 by wires. The negative electrode substrate 102 and the lower end of the positive electrode substrate 101 are fixed by screws, so that the negative electrode substrate 102 and the positive electrode substrate 101 are stacked together to form a whole.

优选的,LED芯片11与基板10固定的端面为大端,面积较大,不仅作为散热端,还可以作为电极端。LED芯片11固定在正极基板101上,正极基板101通电,并且在LED芯片11在工作过程的热量通过与正极基板101端面传导至正极基板101,LED芯片11的侧边设有的引线与相邻的负极基板102连接,使得LED芯片11形成回路。基板10发挥着电极作用,还发挥着导热体的作用。LED芯片11一端与正极基板101连接,另一端与负极基板102连接,使得正极基板101与负极基板102之间并联多个LED芯片11。Preferably, the end face where the LED chip 11 and the substrate 10 are fixed is a large end with a larger area, and can be used not only as a heat dissipation end but also as an electrode end. The LED chip 11 is fixed on the positive electrode substrate 101 , the positive electrode substrate 101 is energized, and the heat of the LED chip 11 during operation is conducted to the positive electrode substrate 101 through the end face of the positive electrode substrate 101 , and the leads provided on the side of the LED chip 11 are adjacent to the The negative electrode substrate 102 is connected, so that the LED chip 11 forms a loop. The substrate 10 functions as an electrode and also functions as a heat conductor. One end of the LED chip 11 is connected to the positive electrode substrate 101 and the other end is connected to the negative electrode substrate 102 , so that a plurality of LED chips 11 are connected in parallel between the positive electrode substrate 101 and the negative electrode substrate 102 .

请参阅图3至4,正极基板101设有凸起部1011,负极基板102设有凹陷部1021。正极基板101与负极基板102相互叠合时,所述凹陷部1021与所述凸起部1011相互匹配。Referring to FIGS. 3 to 4 , the positive electrode substrate 101 is provided with a convex portion 1011 , and the negative electrode substrate 102 is provided with a recessed portion 1021 . When the positive electrode substrate 101 and the negative electrode substrate 102 are superimposed on each other, the concave portion 1021 and the protruding portion 1011 match each other.

或者,负极基板102设有凸起部1011,正极基板101设有凹陷部1021。Alternatively, the negative electrode substrate 102 is provided with a convex portion 1011 , and the positive electrode substrate 101 is provided with a recessed portion 1021 .

请参阅图1至4,若干个所述基板10外侧相互叠加,并向横向延展,以使若干个基板10的两侧形成安装平面13,且安装平面13设有散热板14。由于正极基板101的凸起部1011与负极基板102的凹陷部1021配合,两块正极基板101与负极基板102相向叠加,并且向左右两侧拓展,使得基板10两侧形成平面,即安装平面13。散热板14与安装平面13紧贴,使得基板10的热量能够传导至散热板14上,进而带走基板10上的热量。散热板14的散热方式可以是风冷,也可以是水冷。Referring to FIGS. 1 to 4 , the outer sides of a plurality of the substrates 10 are stacked on each other and extend laterally, so that two sides of the plurality of substrates 10 form a mounting plane 13 , and the mounting plane 13 is provided with a heat dissipation plate 14 . Since the convex portion 1011 of the positive electrode substrate 101 is matched with the recessed portion 1021 of the negative electrode substrate 102 , the two positive electrode substrates 101 and the negative electrode substrate 102 are superimposed on each other and extend to the left and right sides, so that the two sides of the substrate 10 form a plane, that is, the installation plane 13 . The heat dissipation plate 14 is in close contact with the mounting plane 13 , so that the heat of the base plate 10 can be conducted to the heat dissipation plate 14 , thereby taking away the heat on the base plate 10 . The heat dissipation method of the heat dissipation plate 14 may be air cooling or water cooling.

优选的,基板10为铜板,且铜板外侧设有镀金层。Preferably, the substrate 10 is a copper plate, and the outer side of the copper plate is provided with a gold-plated layer.

为了提高LED光线的利用率,LED芯片11的外侧设有光学组件15。光学元件17为透明材质,使得LED芯片11发出的光线能更好的散发,提高利用率。In order to improve the utilization rate of LED light, an optical component 15 is provided on the outer side of the LED chip 11 . The optical element 17 is made of a transparent material, so that the light emitted by the LED chip 11 can be distributed better and the utilization rate can be improved.

请参阅图1至3,基板10远于LED芯片11的一端设有固定座16,以使若干个基板10相互固定。固定座16设置有安装槽,以使正极基板101与负极基板102叠加后插接在安装槽内。固定做16上设置有固定孔,用于对叠加后的正极基板101与负极基板102进行锁紧。Referring to FIGS. 1 to 3 , a fixing seat 16 is provided at one end of the substrate 10 farther from the LED chip 11 , so that a plurality of substrates 10 can be fixed to each other. The fixing base 16 is provided with an installation groove, so that the positive electrode substrate 101 and the negative electrode substrate 102 are superimposed and then inserted into the installation groove. The fixing hole 16 is provided with a fixing hole for locking the superposed positive electrode substrate 101 and the negative electrode substrate 102 .

基板10远于LED芯片11一端设有二个接线头17;其中,一接线头17与正极基板101连接,另一接线头17与负极基板102连接。The substrate 10 is provided with two terminals 17 at one end farther from the LED chip 11 ; one terminal 17 is connected to the positive substrate 101 , and the other terminal 17 is connected to the negative substrate 102 .

LED芯片11通电工作后,LED芯片11产生大量的热量。本装置的LED芯片11直接焊接在基板10上,产生的热量就能传导至基板10上,基板10的热量再从散热器14上散发。基板10不仅作为热传导的导体,而且还是LED芯片11电极,用于对LED芯片11供电。After the LED chip 11 is powered on, the LED chip 11 generates a large amount of heat. The LED chip 11 of the device is directly welded on the substrate 10 , the heat generated can be conducted to the substrate 10 , and the heat of the substrate 10 is then dissipated from the heat sink 14 . The substrate 10 not only serves as a conductor of heat conduction, but also serves as an electrode of the LED chip 11 for supplying power to the LED chip 11 .

其中,LED芯片11直接焊接在铜质的基板10上,基板10与LED芯片11间的焊料是锡膏。锡膏成分为锡、银、铜。锡、银、紫铜的热导率分别是67、429、和407W/M*K,因此焊料的热导率优于67W/M*K。也可以使用其他配方的具有较高热导率的焊料。现有较好的铝基电路板的热导率小于8W/M*K。The LED chip 11 is directly welded on the copper substrate 10 , and the solder between the substrate 10 and the LED chip 11 is solder paste. The components of solder paste are tin, silver and copper. The thermal conductivity of tin, silver, and copper are 67, 429, and 407W/M*K, respectively, so the thermal conductivity of solder is better than 67W/M*K. Solders with higher thermal conductivity of other formulations can also be used. The thermal conductivity of the existing better aluminum-based circuit boards is less than 8W/M*K.

与现有技术相比,本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。Compared with the prior art, the present invention directly welds the LED chip on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current driving can be increased to 1.5 times, and the drivable power can be significantly improved.

上述仅以实施例来进一步说明本发明的技术内容,以便于读者更容易理解,但不代表本发明的实施方式仅限于此,任何依本发明所做的技术延伸或再创造,均受本发明的保护。本发明的保护范围以权利要求书为准。The above only uses examples to further illustrate the technical content of the present invention, so that readers can understand it more easily, but it does not mean that the embodiments of the present invention are limited to this. Any technical extension or re-creation made according to the present invention is subject to the protection of. The protection scope of the present invention is subject to the claims.

Claims (10)

1. A high-power LED device is characterized by comprising a plurality of substrates, LED chips electrically connected with the substrates, and insulating sheets for insulating the substrates from each other; the insulation sheets are arranged on the outer sides of the substrates so as to enable adjacent substrates to be mutually insulated; the substrate is connected with a power supply to enable the LED chip to be conducted.
2. The high power LED device as claimed in claim 1, wherein the substrate comprises a positive substrate connected to the positive electrode of the power supply, a negative substrate connected to the negative electrode of the power supply; one wiring terminal of the LED chip is connected with the anode substrate or the cathode substrate, and the other wiring terminal of the LED chip is connected with the cathode substrate or the anode substrate.
3. The high power LED device as claimed in claim 2, wherein the positive substrate and the negative substrate are stacked on each other and insulated by an insulating sheet.
4. A high power LED device according to claim 3, wherein said substrate is a copper plate; and a gold plating layer is arranged on the outer side of the copper plate.
5. The high power LED device as claimed in claim 3, wherein the LED chip is disposed on the end surface of the substrate; the LED chip is welded on the end face of the anode substrate or the cathode substrate through solder paste to form a terminal, and the other terminal of the LED chip is connected with the adjacent cathode substrate or the anode substrate through a lead.
6. A high power LED device according to claim 3, wherein the anode substrate is provided with a protrusion; the negative electrode substrate is provided with a concave part; when the positive electrode substrate and the negative electrode substrate are mutually overlapped, the concave part is matched with the convex part.
7. The high power LED device as claimed in claim 1, wherein the outer sides of the plurality of substrates are stacked and extended in a transverse direction so that the two sides of the plurality of substrates form a mounting plane; the mounting plane is provided with a heat dissipation plate.
8. The high power LED device as claimed in claim 1, wherein the LED chip is provided with an optical component on the outer side.
9. The high power LED device as claimed in claim 1, wherein the substrate is provided with a fixing base at an end thereof away from the LED chip, so that the plurality of substrates are fixed to each other.
10. The high power LED device as claimed in claim 9, wherein the substrate has two terminals at an end thereof away from the LED chip; one of the connector lug is connected with the positive electrode substrate, and the other connector lug is connected with the negative electrode substrate.
CN201911249106.4A 2019-12-09 2019-12-09 A high-power LED device Pending CN110767641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911249106.4A CN110767641A (en) 2019-12-09 2019-12-09 A high-power LED device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911249106.4A CN110767641A (en) 2019-12-09 2019-12-09 A high-power LED device

Publications (1)

Publication Number Publication Date
CN110767641A true CN110767641A (en) 2020-02-07

Family

ID=69341343

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911249106.4A Pending CN110767641A (en) 2019-12-09 2019-12-09 A high-power LED device

Country Status (1)

Country Link
CN (1) CN110767641A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090224265A1 (en) * 2008-03-05 2009-09-10 Bily Wang LED chip package structure with a high-efficiency heat-dissipating substrate and method for making the same
CN203386812U (en) * 2013-07-19 2014-01-08 歌尔声学股份有限公司 LED device
CN203895451U (en) * 2014-04-14 2014-10-22 深圳市旭宇光电有限公司 Large power led packaging structure
CN105261693A (en) * 2015-10-25 2016-01-20 复旦大学 Integrated package structure for super power vertical chip
CN205122639U (en) * 2015-10-25 2016-03-30 复旦大学 Integrated packaging structure of perpendicular chip of super large power
CN106784243A (en) * 2016-12-27 2017-05-31 广东晶科电子股份有限公司 A kind of deep ultraviolet LED packagings and preparation method thereof
CN107393901A (en) * 2017-08-30 2017-11-24 扬州国扬电子有限公司 A kind of two-side radiation power model of laminated base plate
WO2018126421A1 (en) * 2017-01-05 2018-07-12 格瑞电子(厦门)有限公司 Positive-negative-separated led component, automobile lamp and flashlight
CN207967045U (en) * 2018-01-30 2018-10-12 深圳市泰润光电科技有限公司 One kind being based on ceramic substrate packaged high-power LED light source
CN210866173U (en) * 2019-12-09 2020-06-26 深圳市润沃自动化工程有限公司 High-power LED device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090224265A1 (en) * 2008-03-05 2009-09-10 Bily Wang LED chip package structure with a high-efficiency heat-dissipating substrate and method for making the same
CN203386812U (en) * 2013-07-19 2014-01-08 歌尔声学股份有限公司 LED device
CN203895451U (en) * 2014-04-14 2014-10-22 深圳市旭宇光电有限公司 Large power led packaging structure
CN105261693A (en) * 2015-10-25 2016-01-20 复旦大学 Integrated package structure for super power vertical chip
CN205122639U (en) * 2015-10-25 2016-03-30 复旦大学 Integrated packaging structure of perpendicular chip of super large power
CN106784243A (en) * 2016-12-27 2017-05-31 广东晶科电子股份有限公司 A kind of deep ultraviolet LED packagings and preparation method thereof
WO2018126421A1 (en) * 2017-01-05 2018-07-12 格瑞电子(厦门)有限公司 Positive-negative-separated led component, automobile lamp and flashlight
CN107393901A (en) * 2017-08-30 2017-11-24 扬州国扬电子有限公司 A kind of two-side radiation power model of laminated base plate
CN207967045U (en) * 2018-01-30 2018-10-12 深圳市泰润光电科技有限公司 One kind being based on ceramic substrate packaged high-power LED light source
CN210866173U (en) * 2019-12-09 2020-06-26 深圳市润沃自动化工程有限公司 High-power LED device

Similar Documents

Publication Publication Date Title
CN100391019C (en) Semiconductor light emitting device and manufacturing method thereof
JP3131390U (en) Connection structure of LED and heat dissipation sheet
US7791091B2 (en) Semiconductor light-emitting device, light-emitting module and lighting unit
US8759846B2 (en) Light emitting device
TW200814362A (en) Light-emitting diode device with high heat dissipation property
CN109314170B (en) LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield
CN101364622A (en) High-power LED packaging structure
JP2003101076A (en) Light-emitting device
US20160308106A1 (en) Floating heat sink support with copper sheets and led package assembly for led flip chip package
TW201407748A (en) LED light bar
CN210866173U (en) High-power LED device
CN101404266B (en) Thermoelectric separated light-emitting diode seat structure and heat dissipation unit thereof
CN210866172U (en) High-power thermoelectric separation type LED device and LED light source module
WO2008141500A1 (en) A circuit board for heat dispersion
CN204793612U (en) Packaging Structures for Laser Diodes
CN201038159Y (en) LED module substrate with heat conduction efficiency
CN110767641A (en) A high-power LED device
TWM376119U (en) Heat dissipation module of light emitting diode
CN209782284U (en) Light source module
CN110808243A (en) A high-power thermoelectric separation LED device and LED light source module
CN107845626B (en) light-emitting device
CN102454956A (en) Single LED (light-emitting diode) light source radiating seat and LED lamp
CN201087787Y (en) Improved structure of high-power LED heat dissipation substrate
TWI354383B (en) Light diode package structure
CN101222005A (en) Light emitting diode packaging structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination