CN110767641A - A high-power LED device - Google Patents
A high-power LED device Download PDFInfo
- Publication number
- CN110767641A CN110767641A CN201911249106.4A CN201911249106A CN110767641A CN 110767641 A CN110767641 A CN 110767641A CN 201911249106 A CN201911249106 A CN 201911249106A CN 110767641 A CN110767641 A CN 110767641A
- Authority
- CN
- China
- Prior art keywords
- substrate
- substrates
- led chip
- led device
- high power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 230000017525 heat dissipation Effects 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000009434 installation Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种大功率LED装置,包括若干个基板,与基板电性连接的LED芯片,及用于对若干个基板相互绝缘的绝缘片;所述绝缘片设置于基板外侧,以使相邻基板之间相互绝缘;所述基板与电源连接,以使LED芯片导通。本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。
The invention discloses a high-power LED device, comprising several substrates, LED chips electrically connected to the substrates, and insulating sheets for insulating the several substrates from each other; Adjacent substrates are insulated from each other; the substrates are connected to a power source to make the LED chips conduct. In the present invention, the LED chip is directly welded on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current drive can be increased to 1.5 times, and the driveable power is significantly improved.
Description
技术领域technical field
本发明涉及LED技术领域,更具体地说是一种大功率LED装置。The present invention relates to the technical field of LEDs, and more particularly to a high-power LED device.
背景技术Background technique
现有大功率LED COB的封装,通常是将LED封装到基板上(包括铝、铜、氮化铝等种类的基板),然后将基板固定在散热组件上,散热组件将LED工作时产生的热量通过热传导的方式传递给散热介质,达到LED的散热冷却效果。由于基板绝缘层以及散热组件与基板间的导热系数低,导致最终LED热传导效率十分低下,如果希望在单位发光面积上的LED以更高的功率工作,则需要提高LED与散热组件之间的导热系数,提高散热效率。The existing high-power LED COB package is usually to package the LED on a substrate (including aluminum, copper, aluminum nitride and other types of substrates), and then fix the substrate on the heat dissipation component, and the heat dissipation component dissipates the heat generated by the LED during operation. It is transferred to the heat dissipation medium by means of heat conduction to achieve the heat dissipation and cooling effect of the LED. Due to the low thermal conductivity between the insulating layer of the substrate and the heat dissipation component and the substrate, the thermal conduction efficiency of the final LED is very low. If you want the LED on a unit light emitting area to work with higher power, it is necessary to improve the thermal conductivity between the LED and the heat dissipation component. coefficient to improve heat dissipation efficiency.
还有现有的基板用于比较单一,只是单单用来给LED芯片导热,不能作为其它用途,从而使得LED装置的结构较为复杂。There are also existing substrates that are used for a relatively single purpose, and are only used to conduct heat for the LED chip, and cannot be used for other purposes, which makes the structure of the LED device more complicated.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于克服现有技术的不足,提供一种大功率LED装置。The purpose of the present invention is to overcome the deficiencies of the prior art and provide a high-power LED device.
为实现上述目的,本发明采用以下技术方案:To achieve the above object, the present invention adopts the following technical solutions:
一种大功率LED装置,包括若干个基板,与基板电性连接的LED芯片,及用于对若干个基板相互绝缘的绝缘片;所述绝缘片设置于基板外侧,以使相邻基板之间相互绝缘;所述基板与电源连接,以使LED芯片导通。A high-power LED device includes several substrates, LED chips electrically connected to the substrates, and insulating sheets used to insulate the several substrates from each other; Insulated from each other; the base plate is connected with the power source to make the LED chip conduct.
其进一步技术方案为:所述基板包括与电源正极连接的正极基板,与电源负极连接的负极基板;所述LED芯片的一接线端与正极基板或负极基板连接,另一接线端与负极基板或正极基板连接。Its further technical scheme is: the substrate includes a positive substrate connected to the positive electrode of the power supply, and a negative substrate connected to the negative electrode of the power supply; one terminal of the LED chip is connected to the positive substrate or the negative substrate, and the other terminal is connected to the negative substrate or the negative substrate. Positive substrate connection.
其进一步技术方案为:所述正极基板与负极基板相互叠加设置,并且正极基板与负极基板之间通过绝缘片绝缘。Its further technical scheme is that: the positive electrode substrate and the negative electrode substrate are superimposed on each other, and the positive electrode substrate and the negative electrode substrate are insulated by an insulating sheet.
其进一步技术方案为:所述基板为铜板;所述铜板外侧设有镀金层。Its further technical scheme is as follows: the base plate is a copper plate; the outer side of the copper plate is provided with a gold-plated layer.
其进一步技术方案为:所述LED芯片设于基板的端面;所述LED芯片通过锡膏焊接于正极基板或负极基板的端面,以形成一接线端,且LED芯片的另一接线端通过导线与相邻的负极基板或正极基板连接。Its further technical scheme is: the LED chip is arranged on the end face of the substrate; the LED chip is welded to the end face of the positive electrode substrate or the negative electrode substrate by solder paste to form a terminal, and the other terminal of the LED chip is connected with the wire through the wire. Adjacent negative electrode substrates or positive electrode substrates are connected.
其进一步技术方案为:所述正极基板设有凸起部;所述负极基板设有凹陷部;所述正极基板与负极基板相互叠合时,所述凹陷部与所述凸起部相互匹配。A further technical solution is: the positive electrode substrate is provided with a convex portion; the negative electrode substrate is provided with a concave portion; when the positive electrode substrate and the negative electrode substrate are overlapped with each other, the concave portion and the convex portion match each other.
其进一步技术方案为:若干个所述基板外侧相互叠加,并向横向延展,以使若干个基板的两侧形成安装平面;所述安装平面设有散热板。Its further technical scheme is as follows: the outer sides of a plurality of the substrates are superimposed on each other and extend laterally, so that two sides of the plurality of substrates form an installation plane; the installation plane is provided with a heat dissipation plate.
其进一步技术方案为:所述LED芯片的外侧设有光学组件。Its further technical scheme is: an optical component is arranged on the outer side of the LED chip.
其进一步技术方案为:所述基板远于LED芯片的一端设有固定座,以使若干个基板相互固定。A further technical solution is that: the end of the substrate farther from the LED chip is provided with a fixing seat, so that several substrates are fixed to each other.
其进一步技术方案为:所述基板远于LED芯片一端设有二个接线头;其中,一接线头与正极基板连接,另一接线头与负极基板连接。Its further technical scheme is: the substrate is provided with two terminals at one end farther from the LED chip; wherein one terminal is connected to the positive substrate, and the other terminal is connected to the negative substrate.
本发明与现有技术相比的有益效果是:本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。Compared with the prior art, the present invention has the beneficial effects that the present invention directly welds the LED chip on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current driving can be increased to 1.5 times, and the drivable power can be significantly improved.
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明技术手段,可依照说明书的内容予以实施,并且为了让本发明的上述和其它目的、特征及优点能够更明显易懂,以下特举较佳实施例,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to understand the technical means of the present invention more clearly, it can be implemented in accordance with the content of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable, the following A preferred embodiment is given, and the detailed description is as follows.
附图说明Description of drawings
图1为本发明的一种大功率LED装置的立体结构图;1 is a three-dimensional structural view of a high-power LED device according to the present invention;
图2为本发明的一种大功率LED装置的侧视图;2 is a side view of a high-power LED device of the present invention;
图3为本发明的一种大功率LED装置的去掉部分散热器的立体结构图及局部放大图;3 is a three-dimensional structural view and a partial enlarged view of a high-power LED device of the present invention with a part of the radiator removed;
图4为本发明的一种大功率LED装置的基板的装配图及局部放大图。4 is an assembly view and a partial enlarged view of a substrate of a high-power LED device according to the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白,下面结合附图和具体实施方式对本发明作进一步详细说明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention.
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore It should not be construed as a limitation of the present invention.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expressly or implicitly include one or more of that feature. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined.
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。In the present invention, unless otherwise expressly specified and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense, for example, it may be a connection or a detachable connection, It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication between the two elements or the interaction relationship between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不应理解为必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。此外,本领域的技术人员可以将本说明书中描述的不同实施例或示例进行结合和组合。In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be construed as necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples described in this specification.
图纸1至4为本发明的图纸。Drawings 1 to 4 are drawings of the present invention.
本实施提供了一种大功率LED装置,请参阅图1至3,包括若干个基板10,与基板10电性连接的LED芯片11,及用于对若干个基板10相互绝缘的绝缘片12。绝缘片12设置于基板10外侧,以使相邻基板10之间相互绝缘。基板10与电源连接,以使LED芯片11导通。绝缘片12包裹在基板10外侧,使得基板10绝缘。This embodiment provides a high-power LED device, please refer to FIGS. 1 to 3 , including a plurality of
其中,绝缘片12可以是树脂或其他能够将相邻基板10粘结在一起的绝缘材料。The insulating sheet 12 may be resin or other insulating materials capable of bonding the
请参阅图1至3,基板10包括与电源正极连接的正极基板101,与电源负极连接的负极基板102。LED芯片11的一接线端与正极基板101或负极基板102连接,另一接线端与负极基板102或正极基板101连接。LED芯片11连接在正极基板101与负极基板102之间,以使形成回路。Referring to FIGS. 1 to 3 , the
正极基板101与负极基板102相互叠加设置,并且正极基板101与负极基板102之间通过绝缘片12绝缘。The positive electrode substrate 101 and the negative electrode substrate 102 are disposed on top of each other, and the positive electrode substrate 101 and the negative electrode substrate 102 are insulated by the insulating sheet 12 .
LED芯片11设于基板10的端面。LED芯片11通过锡膏焊接于正极基板101或负极基板102的端面,以形成一接线端,且LED芯片11的另一接线端通过导线与相邻的负极基板102或正极基板101连接。负极基板102与正极基板101下端通过螺钉固定,以使负极基板102与正极基板101相互叠合后形成一整体。The LED chip 11 is provided on the end surface of the
优选的,LED芯片11与基板10固定的端面为大端,面积较大,不仅作为散热端,还可以作为电极端。LED芯片11固定在正极基板101上,正极基板101通电,并且在LED芯片11在工作过程的热量通过与正极基板101端面传导至正极基板101,LED芯片11的侧边设有的引线与相邻的负极基板102连接,使得LED芯片11形成回路。基板10发挥着电极作用,还发挥着导热体的作用。LED芯片11一端与正极基板101连接,另一端与负极基板102连接,使得正极基板101与负极基板102之间并联多个LED芯片11。Preferably, the end face where the LED chip 11 and the
请参阅图3至4,正极基板101设有凸起部1011,负极基板102设有凹陷部1021。正极基板101与负极基板102相互叠合时,所述凹陷部1021与所述凸起部1011相互匹配。Referring to FIGS. 3 to 4 , the positive electrode substrate 101 is provided with a convex portion 1011 , and the negative electrode substrate 102 is provided with a recessed portion 1021 . When the positive electrode substrate 101 and the negative electrode substrate 102 are superimposed on each other, the concave portion 1021 and the protruding portion 1011 match each other.
或者,负极基板102设有凸起部1011,正极基板101设有凹陷部1021。Alternatively, the negative electrode substrate 102 is provided with a convex portion 1011 , and the positive electrode substrate 101 is provided with a recessed portion 1021 .
请参阅图1至4,若干个所述基板10外侧相互叠加,并向横向延展,以使若干个基板10的两侧形成安装平面13,且安装平面13设有散热板14。由于正极基板101的凸起部1011与负极基板102的凹陷部1021配合,两块正极基板101与负极基板102相向叠加,并且向左右两侧拓展,使得基板10两侧形成平面,即安装平面13。散热板14与安装平面13紧贴,使得基板10的热量能够传导至散热板14上,进而带走基板10上的热量。散热板14的散热方式可以是风冷,也可以是水冷。Referring to FIGS. 1 to 4 , the outer sides of a plurality of the
优选的,基板10为铜板,且铜板外侧设有镀金层。Preferably, the
为了提高LED光线的利用率,LED芯片11的外侧设有光学组件15。光学元件17为透明材质,使得LED芯片11发出的光线能更好的散发,提高利用率。In order to improve the utilization rate of LED light, an
请参阅图1至3,基板10远于LED芯片11的一端设有固定座16,以使若干个基板10相互固定。固定座16设置有安装槽,以使正极基板101与负极基板102叠加后插接在安装槽内。固定做16上设置有固定孔,用于对叠加后的正极基板101与负极基板102进行锁紧。Referring to FIGS. 1 to 3 , a fixing
基板10远于LED芯片11一端设有二个接线头17;其中,一接线头17与正极基板101连接,另一接线头17与负极基板102连接。The
LED芯片11通电工作后,LED芯片11产生大量的热量。本装置的LED芯片11直接焊接在基板10上,产生的热量就能传导至基板10上,基板10的热量再从散热器14上散发。基板10不仅作为热传导的导体,而且还是LED芯片11电极,用于对LED芯片11供电。After the LED chip 11 is powered on, the LED chip 11 generates a large amount of heat. The LED chip 11 of the device is directly welded on the
其中,LED芯片11直接焊接在铜质的基板10上,基板10与LED芯片11间的焊料是锡膏。锡膏成分为锡、银、铜。锡、银、紫铜的热导率分别是67、429、和407W/M*K,因此焊料的热导率优于67W/M*K。也可以使用其他配方的具有较高热导率的焊料。现有较好的铝基电路板的热导率小于8W/M*K。The LED chip 11 is directly welded on the
与现有技术相比,本发明将LED芯片直接焊接在基板上,并且基板为镀有金层的铜板,使得LED芯片散热效率高。在相同的LED芯片封装密度下,与现有技术相比,电流驱动可以提高到1.5倍,可驱动功率明显提升。Compared with the prior art, the present invention directly welds the LED chip on the substrate, and the substrate is a copper plate plated with a gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current driving can be increased to 1.5 times, and the drivable power can be significantly improved.
上述仅以实施例来进一步说明本发明的技术内容,以便于读者更容易理解,但不代表本发明的实施方式仅限于此,任何依本发明所做的技术延伸或再创造,均受本发明的保护。本发明的保护范围以权利要求书为准。The above only uses examples to further illustrate the technical content of the present invention, so that readers can understand it more easily, but it does not mean that the embodiments of the present invention are limited to this. Any technical extension or re-creation made according to the present invention is subject to the protection of. The protection scope of the present invention is subject to the claims.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911249106.4A CN110767641A (en) | 2019-12-09 | 2019-12-09 | A high-power LED device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911249106.4A CN110767641A (en) | 2019-12-09 | 2019-12-09 | A high-power LED device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110767641A true CN110767641A (en) | 2020-02-07 |
Family
ID=69341343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911249106.4A Pending CN110767641A (en) | 2019-12-09 | 2019-12-09 | A high-power LED device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110767641A (en) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090224265A1 (en) * | 2008-03-05 | 2009-09-10 | Bily Wang | LED chip package structure with a high-efficiency heat-dissipating substrate and method for making the same |
CN203386812U (en) * | 2013-07-19 | 2014-01-08 | 歌尔声学股份有限公司 | LED device |
CN203895451U (en) * | 2014-04-14 | 2014-10-22 | 深圳市旭宇光电有限公司 | Large power led packaging structure |
CN105261693A (en) * | 2015-10-25 | 2016-01-20 | 复旦大学 | Integrated package structure for super power vertical chip |
CN205122639U (en) * | 2015-10-25 | 2016-03-30 | 复旦大学 | Integrated packaging structure of perpendicular chip of super large power |
CN106784243A (en) * | 2016-12-27 | 2017-05-31 | 广东晶科电子股份有限公司 | A kind of deep ultraviolet LED packagings and preparation method thereof |
CN107393901A (en) * | 2017-08-30 | 2017-11-24 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of laminated base plate |
WO2018126421A1 (en) * | 2017-01-05 | 2018-07-12 | 格瑞电子(厦门)有限公司 | Positive-negative-separated led component, automobile lamp and flashlight |
CN207967045U (en) * | 2018-01-30 | 2018-10-12 | 深圳市泰润光电科技有限公司 | One kind being based on ceramic substrate packaged high-power LED light source |
CN210866173U (en) * | 2019-12-09 | 2020-06-26 | 深圳市润沃自动化工程有限公司 | High-power LED device |
-
2019
- 2019-12-09 CN CN201911249106.4A patent/CN110767641A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090224265A1 (en) * | 2008-03-05 | 2009-09-10 | Bily Wang | LED chip package structure with a high-efficiency heat-dissipating substrate and method for making the same |
CN203386812U (en) * | 2013-07-19 | 2014-01-08 | 歌尔声学股份有限公司 | LED device |
CN203895451U (en) * | 2014-04-14 | 2014-10-22 | 深圳市旭宇光电有限公司 | Large power led packaging structure |
CN105261693A (en) * | 2015-10-25 | 2016-01-20 | 复旦大学 | Integrated package structure for super power vertical chip |
CN205122639U (en) * | 2015-10-25 | 2016-03-30 | 复旦大学 | Integrated packaging structure of perpendicular chip of super large power |
CN106784243A (en) * | 2016-12-27 | 2017-05-31 | 广东晶科电子股份有限公司 | A kind of deep ultraviolet LED packagings and preparation method thereof |
WO2018126421A1 (en) * | 2017-01-05 | 2018-07-12 | 格瑞电子(厦门)有限公司 | Positive-negative-separated led component, automobile lamp and flashlight |
CN107393901A (en) * | 2017-08-30 | 2017-11-24 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of laminated base plate |
CN207967045U (en) * | 2018-01-30 | 2018-10-12 | 深圳市泰润光电科技有限公司 | One kind being based on ceramic substrate packaged high-power LED light source |
CN210866173U (en) * | 2019-12-09 | 2020-06-26 | 深圳市润沃自动化工程有限公司 | High-power LED device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100391019C (en) | Semiconductor light emitting device and manufacturing method thereof | |
JP3131390U (en) | Connection structure of LED and heat dissipation sheet | |
US7791091B2 (en) | Semiconductor light-emitting device, light-emitting module and lighting unit | |
US8759846B2 (en) | Light emitting device | |
TW200814362A (en) | Light-emitting diode device with high heat dissipation property | |
CN109314170B (en) | LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield | |
CN101364622A (en) | High-power LED packaging structure | |
JP2003101076A (en) | Light-emitting device | |
US20160308106A1 (en) | Floating heat sink support with copper sheets and led package assembly for led flip chip package | |
TW201407748A (en) | LED light bar | |
CN210866173U (en) | High-power LED device | |
CN101404266B (en) | Thermoelectric separated light-emitting diode seat structure and heat dissipation unit thereof | |
CN210866172U (en) | High-power thermoelectric separation type LED device and LED light source module | |
WO2008141500A1 (en) | A circuit board for heat dispersion | |
CN204793612U (en) | Packaging Structures for Laser Diodes | |
CN201038159Y (en) | LED module substrate with heat conduction efficiency | |
CN110767641A (en) | A high-power LED device | |
TWM376119U (en) | Heat dissipation module of light emitting diode | |
CN209782284U (en) | Light source module | |
CN110808243A (en) | A high-power thermoelectric separation LED device and LED light source module | |
CN107845626B (en) | light-emitting device | |
CN102454956A (en) | Single LED (light-emitting diode) light source radiating seat and LED lamp | |
CN201087787Y (en) | Improved structure of high-power LED heat dissipation substrate | |
TWI354383B (en) | Light diode package structure | |
CN101222005A (en) | Light emitting diode packaging structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |