CN110767598A - Chuck device and semiconductor processing equipment - Google Patents
Chuck device and semiconductor processing equipment Download PDFInfo
- Publication number
- CN110767598A CN110767598A CN201810847214.0A CN201810847214A CN110767598A CN 110767598 A CN110767598 A CN 110767598A CN 201810847214 A CN201810847214 A CN 201810847214A CN 110767598 A CN110767598 A CN 110767598A
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- Prior art keywords
- chuck
- air inlet
- inlet hole
- hole
- heat exchange
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000015556 catabolic process Effects 0.000 claims abstract description 21
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 43
- 238000009413 insulation Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a chuck device and a semiconductor processing device, comprising: the chuck comprises a bearing surface for bearing a wafer, and a first air inlet hole is arranged in the chuck; the protection piece is arranged in the first air inlet hole and adopts a porous structure, and heat exchange gas can flow through the porous structure and then reach the bearing surface, so that the risk of the breakdown discharge phenomenon of the heat exchange gas in the first air inlet hole is reduced. The invention provides a chuck device and a semiconductor processing device, which can reduce the occurrence of breakdown discharge in an air inlet channel and reduce the probability of damage of the air inlet channel in the chuck device.
Description
Technical Field
The invention relates to the technical field of semiconductor process equipment, in particular to a chuck device and semiconductor processing equipment.
Background
At present, in the flow of semiconductor process, when a plasma etching process is required, a wafer is usually placed on a chuck in a reaction chamber of semiconductor processing equipment, and the chuck plays roles of supporting the wafer, fixing the wafer, controlling the temperature of the wafer in the process and the like. Among them, the temperature control of the wafer generally adopts the following method: cooling the chuck by circulating a cooling liquid inside the chuck to indirectly cool the wafer, and blowing a heat exchange gas (e.g., helium gas) into the chuck to blow air against the back side of the wafer, thereby achieving heat exchange with the wafer. In addition, the chuck is also responsible for introducing radio frequency energy to form direct current self-bias on the surface of the wafer and attract the plasma to accelerate to move towards the surface of the wafer, so that the etching process is realized.
In the prior art, a gas channel is arranged in a chuck and used for transmitting heat exchange gas to the back of a wafer so as to achieve the effect of controlling the temperature of the wafer, but when the process is carried out, the chuck is loaded with radio frequency energy, so that the gas channel in the chuck is in a radio frequency strong magnetic field coverage area, and the heat exchange gas is easy to generate breakdown discharge when passing through the gas channel. In addition, because of the potential difference between the wafer and the chuck forming the direct current self-bias voltage, a strong electric field can be generated between the wafer and the chuck, which can also cause the heat exchange gas to be very easy to generate breakdown discharge in the gas channel, thereby causing the damage of the gas inlet channel in the chuck.
Disclosure of Invention
The present invention is directed to solve at least one of the problems of the prior art, and provides a chuck device and a semiconductor processing apparatus, which can reduce the occurrence of a breakdown discharge in an air inlet passage and reduce the probability of damage to the air inlet passage in the chuck device.
To achieve the object of the present invention, there is provided a chuck apparatus including:
the wafer loading device comprises a chuck, a first clamping piece and a second clamping piece, wherein the chuck comprises a loading surface for loading a wafer, and a first air inlet hole is formed in the chuck;
the protection piece is arranged in the first air inlet hole and adopts a porous structure, and heat exchange gas can flow through the porous structure and then reach the bearing surface, so that the risk of the breakdown discharge phenomenon of the heat exchange gas in the first air inlet hole is reduced.
Preferably, the porous structure comprises a cylindrical sponge.
Preferably, the diameter of each hole in the sponge body ranges from 0.1mm to 0.3 mm.
Preferably, an annular groove is provided on a hole wall of the first air intake hole so as to surround the hole wall in the circumferential direction, and the guard is disposed in the annular groove.
Preferably, the insulating ring body is disposed in the annular groove, and the shielding member is filled in an inner space of the insulating ring body.
Preferably, the outer peripheral wall of the protection part is attached to the inner peripheral wall of the insulation ring body.
Preferably, the chuck includes a chuck body and an insulating layer disposed on the chuck body, wherein,
the first air inlet hole is formed in the chuck body, and the top surface of the insulating layer serves as the bearing surface;
and a second air inlet hole is formed in the insulating layer at a position corresponding to the first air inlet hole and used for transmitting the heat exchange gas flowing out of the porous structure to the bearing surface.
Preferably, the annular groove penetrates through the bottom surface of the insulating layer in the axial direction of the first air inlet hole, and one end surface of the protection piece is attached to the bottom surface of the insulating layer.
Preferably, the diameter of the second air intake hole is smaller than the diameter of the first air intake hole.
As another technical solution, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber, wherein a chuck device is disposed in the reaction chamber and is used for carrying a workpiece to be processed, and the chuck device adopts the above chuck device provided by the present invention.
The invention has the following beneficial effects:
the invention provides a chuck device, which comprises a chuck and a protection piece, wherein the chuck comprises a bearing surface for bearing a wafer, a first air inlet hole is arranged in the chuck, the protection piece is arranged in the first air inlet hole, the protection piece adopts a porous structure, and heat exchange gas can flow through the porous structure to the bearing surface and can occupy partial space in the first air inlet hole. Under the condition that the pressure of the heat exchange gas is certain, the smaller the aperture of the heat exchange gas flowing through is, the more difficult the breakdown discharge phenomenon is generated, therefore, the porous structure can reduce the risk of the breakdown discharge phenomenon of the heat exchange gas in the first air inlet hole, and the probability of damage of an air inlet channel in the chuck device can be reduced.
According to the semiconductor processing equipment provided by the invention, through adopting the chuck device provided by the invention, the occurrence of breakdown discharge in the air inlet channel can be reduced, and the probability of damage of the air inlet channel in the chuck device is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a chuck apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a chuck according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a guard according to an embodiment of the present invention;
FIG. 4 is a graph of the change in Paschen's law for different gases.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the chuck device and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 4, the present embodiment provides a chuck apparatus including a chuck including a carrying surface for carrying a wafer 5 and a shield member 2 in which a first air intake hole 11 is provided. Specifically, the chuck comprises a chuck body 1 and an insulating layer 4 arranged on the chuck body 1, wherein a first air inlet hole 11 is arranged in the chuck body 1, and the upper surface of the insulating layer 4 is used as the bearing surface for bearing the wafer 5; in the insulating layer 4, a second air inlet 41 is disposed at a position corresponding to the first air inlet 11, and is used for transmitting the heat exchange gas flowing out from the first air inlet 11 to the bearing surface.
The shielding member 2 is disposed in the first air inlet hole 11, and the shielding member 2 adopts a porous structure, and the heat exchange gas can flow through the porous structure and onto the bearing surface, so as to reduce the risk of the breakdown discharge phenomenon of the heat exchange gas in the first air inlet hole 11. According to the law of direct current breakdown of different gases under different conditions, the paschen law formula is as follows:
the above formula represents the law of the relationship among the breakdown voltage of the gas gap in the uniform electric field, the gap distance and the gas pressure, and it can be known from the law that the smaller the inner diameter of each hole in the porous structure is, the less the gas is easy to discharge under the condition of a certain pressure of the heat exchange gas. Based on this principle, with the porous structure, the risk of occurrence of the breakdown discharge phenomenon in the first intake holes 11 can be reduced, so that the probability of damage to the intake passage in the chuck apparatus can be reduced.
In the present embodiment, the porous structure includes a cylindrical sponge, and the sponge herein only means a structure similar to the sponge structure, and the material thereof is made of an insulating material with good insulation, including ceramic, so as to further reduce the occurrence of the breakdown discharge phenomenon. However, the shape of the sponge is not limited thereto, and may be adjusted according to the shape of the first air intake hole 11.
In this embodiment, the cavernosum includes the multilayer gas pocket layer that sets gradually along the columniform axial, and evenly distributed has a plurality of small pores in every layer of gas pocket layer, and in two adjacent gas pocket layers, each small pore in the gas pocket layer of one of them layer sets up with the interval between two adjacent small pores in the gas pocket layer of one of them layer relatively.
The sponge body can be made by sintering, which means that a powdery material is converted into a compact body, and the compact body is a polycrystalline material, and the microstructure of the compact body consists of crystals, glass bodies and air holes. However, the sponge may also be made by machining.
In this embodiment, the sponge is cylindrical, but the invention is not limited to this, and in practical applications, the sponge may also take any other shape.
In this embodiment, the diameter of each hole in the sponge ranges from 0.1mm to 0.3 mm.
Alternatively, each hole in the sponge may have a diameter of at least 0.1mm, which is the limiting hole diameter made by the sintering process. In practical application, the diameter can also be selected to be 0.3mm, etc.
In the present embodiment, an annular groove 12 is provided on the hole wall of the first air intake hole 11 so as to surround along the circumferential direction thereof, which forms a stepped structure in the first air intake hole 11 for confining the protection member 2 in the annular groove 12. It will be readily appreciated that the outer diameter of the shield 2 should be greater than the diameter of the first air intake holes 11 so as to be able to be defined in the annular groove 12.
In the present embodiment, an insulating ring body 3 is further included, the insulating ring body 3 is disposed in the annular groove 12, and the shielding member 2 is filled in an inner space of the insulating ring body 3. By means of the insulating ring body 3, the insulating effect of the protection element 2 can be improved, the electric field strength in the protection element 2 can be reduced, and the occurrence of the breakdown discharge phenomenon can be further reduced.
Optionally, the insulating ring 3 and the chuck body 1, and the insulating ring 3 and the protection member 2 may be bonded by silica gel, which has a good heat conductivity, so as to improve the heat exchange performance.
Optionally, an end surface of the insulating ring body 3 is flush with the bearing surface, so that the wafer is attached to the insulating ring body 3, the insulation resistance between the wafer 5 and the chuck body 1 can be increased, the insulation effect is enhanced, and the occurrence of the breakdown discharge phenomenon can be reduced. In addition, the inner diameter of the insulating ring body 3 is larger than or equal to the aperture of the first air inlet hole 11, so that the heat exchange performance of the chuck is prevented from being influenced by the smoothness of the circulation of heat exchange gas in the first air inlet hole 11.
Specifically, in the present embodiment, the insulating ring body 3 is a cylindrical ring body, and the height and the outer diameter of the cylindrical ring body both range from 2mm to 5 mm; the protection member 2 is a cylinder, and the height and the diameter of the cylinder range from 1mm to 2 mm.
Alternatively, the outer peripheral wall of the protection part 2 is attached to the inner peripheral wall of the insulation ring body 3, so that the overlapping part of the insulation layer 4 with the insulation ring body 3 and the protection part 2 is increased, in this embodiment, the second air inlet 41 is located at the center of the upper surface of the cylindrical protection member 2, and the connection line between the charged position on the wafer 5 and the charged position on the chuck body 1 needs to pass through the sidewall (section a) of the second air inlet 41 in the insulation layer 4, then pass through the upper surface of the protection member 2 and the upper surface (section B) of the insulation ring 3, the sum of the length of the section a and the length of the section B is the insulation distance between the wafer 5 and the chuck body 1, the larger the insulation distance is, the smaller the electric field intensity between the wafer 5 and the chuck body 1 is, the outer diameter of the insulation ring 3 is increased, the electric field strength between the wafer 5 and the chuck body 1 can be reduced, thereby further reducing the occurrence of the breakdown discharge phenomenon.
Specifically, in this embodiment, the length of the segment A is 0.15mm-0.5mm, and the length of the segment B is 1mm-2.5 mm.
In the embodiment, the annular groove 12 penetrates the bottom surface of the insulating layer 4 along the axial direction of the first gas inlet hole 11, and one end surface of the protection member 2 is attached to the bottom surface of the insulating layer 4, so that the wafer 5 placed on the carrying surface is attached to the protection member 2, and after passing through the protection member 2, the heat exchange gas does not pass through the first gas inlet hole 11 in the chuck but directly reaches the lower surface of the wafer 5, so that the heat exchange gas is prevented from still being in a strong electric field after passing through the protection member 2, and the occurrence of the arcing phenomenon can be reduced.
In the embodiment, the second gas inlet holes 41 are used for transmitting the heat exchange gas flowing out of the porous structure to the bearing surface, the diameter of the second gas inlet holes 41 is smaller than that of the first gas inlet holes 11, and according to paschen's law, under the condition that the pressure of the heat exchange gas is constant, the smaller the diameter of the second gas inlet holes 41 is, the more difficult the gas is to discharge, so as to reduce the occurrence of breakdown discharge.
In summary, the chuck device provided by the present invention can reduce the risk of the occurrence of the breakdown discharge phenomenon in the first air inlet hole 11 by virtue of the porous structure, so as to reduce the probability of the damage of the air inlet channel in the chuck device.
As another technical solution, the present invention further provides a semiconductor processing apparatus, which includes a reaction chamber, wherein a chuck device is disposed in the reaction chamber and is used for carrying a workpiece to be processed, and the chuck device adopts the above chuck device provided by the present invention.
According to the semiconductor processing equipment provided by the invention, through adopting the chuck device provided by the invention, the occurrence of breakdown discharge in the air inlet channel can be reduced, and the probability of damage of the air inlet channel in the chuck device is reduced.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A chuck apparatus, comprising:
the wafer loading device comprises a chuck, a first clamping piece and a second clamping piece, wherein the chuck comprises a loading surface for loading a wafer, and a first air inlet hole is formed in the chuck;
the protection piece is arranged in the first air inlet hole and adopts a porous structure, and heat exchange gas can flow through the porous structure and then reach the bearing surface, so that the risk of the breakdown discharge phenomenon of the heat exchange gas in the first air inlet hole is reduced.
2. The chucking device of claim 1, wherein said porous structure comprises a cylindrical sponge.
3. The chucking device of claim 2, wherein the diameter of each hole in the sponge ranges from 0.1mm to 0.3 mm.
4. The chuck device according to claim 1, wherein an annular groove is provided on a hole wall of the first intake hole circumferentially therearound, the shield being disposed in the annular groove.
5. The chuck assembly according to claim 4, further comprising an insulating ring disposed in the annular recess, the shield filling an inner space of the insulating ring.
6. The chuck assembly according to claim 5, wherein the outer peripheral wall of the shield abuts the inner peripheral wall of the insulating ring.
7. The chuck assembly of claim 6, wherein the chuck includes a chuck body and an insulating layer disposed on the chuck body, wherein,
the first air inlet hole is formed in the chuck body, and the top surface of the insulating layer serves as the bearing surface;
and a second air inlet hole is formed in the insulating layer at a position corresponding to the first air inlet hole and used for transmitting the heat exchange gas flowing out of the porous structure to the bearing surface.
8. The chuck device as claimed in claim 7, wherein the annular groove penetrates to a bottom surface of the insulating layer in an axial direction of the first intake hole, and an end surface of the shielding member is fitted to the bottom surface of the insulating layer.
9. The chucking device as recited in claim 8 wherein the diameter of said second intake port is smaller than the diameter of said first intake port.
10. A semiconductor processing apparatus comprising a reaction chamber in which a chuck device for carrying a workpiece to be processed is disposed, wherein the chuck device employs the chuck device of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810847214.0A CN110767598A (en) | 2018-07-27 | 2018-07-27 | Chuck device and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810847214.0A CN110767598A (en) | 2018-07-27 | 2018-07-27 | Chuck device and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110767598A true CN110767598A (en) | 2020-02-07 |
Family
ID=69327828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810847214.0A Pending CN110767598A (en) | 2018-07-27 | 2018-07-27 | Chuck device and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110767598A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024139970A1 (en) * | 2022-12-29 | 2024-07-04 | 中微半导体设备(上海)股份有限公司 | Porous plug assembly, electrostatic chuck and plasma etching device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338492A (en) * | 2002-05-21 | 2003-11-28 | Tokyo Electron Ltd | Plasma processing system |
| US20050105243A1 (en) * | 2003-11-17 | 2005-05-19 | Samsung Electronics Co., Ltd | Electrostatic chuck for supporting a substrate |
| JP2005268654A (en) * | 2004-03-19 | 2005-09-29 | Ngk Spark Plug Co Ltd | Electrostatic chuck |
| CN101533798A (en) * | 2008-03-11 | 2009-09-16 | 日本碍子株式会社 | Electrostatic chuck |
| JP2010123712A (en) * | 2008-11-19 | 2010-06-03 | Nihon Ceratec Co Ltd | Electrostatic chuck and method of manufacturing the same |
| US20130286532A1 (en) * | 2012-04-27 | 2013-10-31 | Ngk Insulators, Ltd. | Semiconductor manufacturing apparatus member |
| CN105074901A (en) * | 2013-03-29 | 2015-11-18 | Toto株式会社 | Electrostatic chuck |
| CN109891572A (en) * | 2017-07-06 | 2019-06-14 | 日本碍子株式会社 | Component of semiconductor manufacturing equipment and its manufacturing method |
-
2018
- 2018-07-27 CN CN201810847214.0A patent/CN110767598A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338492A (en) * | 2002-05-21 | 2003-11-28 | Tokyo Electron Ltd | Plasma processing system |
| US20050105243A1 (en) * | 2003-11-17 | 2005-05-19 | Samsung Electronics Co., Ltd | Electrostatic chuck for supporting a substrate |
| JP2005268654A (en) * | 2004-03-19 | 2005-09-29 | Ngk Spark Plug Co Ltd | Electrostatic chuck |
| CN101533798A (en) * | 2008-03-11 | 2009-09-16 | 日本碍子株式会社 | Electrostatic chuck |
| JP2010123712A (en) * | 2008-11-19 | 2010-06-03 | Nihon Ceratec Co Ltd | Electrostatic chuck and method of manufacturing the same |
| US20130286532A1 (en) * | 2012-04-27 | 2013-10-31 | Ngk Insulators, Ltd. | Semiconductor manufacturing apparatus member |
| CN105074901A (en) * | 2013-03-29 | 2015-11-18 | Toto株式会社 | Electrostatic chuck |
| CN109891572A (en) * | 2017-07-06 | 2019-06-14 | 日本碍子株式会社 | Component of semiconductor manufacturing equipment and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 张联盟等: "《材料科学基础》", 31 August 2004, 武汉理工大学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024139970A1 (en) * | 2022-12-29 | 2024-07-04 | 中微半导体设备(上海)股份有限公司 | Porous plug assembly, electrostatic chuck and plasma etching device |
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Application publication date: 20200207 |
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