CN110752271A - Processing method of PERC battery - Google Patents
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- 239000005360 phosphosilicate glass Substances 0.000 claims abstract description 30
- 238000005498 polishing Methods 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
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- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
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- 239000000919 ceramic Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
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- 239000005368 silicate glass Substances 0.000 description 1
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- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/30604—Chemical etching
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Abstract
本发明涉及一种PERC电池的加工方法，包括背蚀刻工艺，背蚀刻工艺包括以下步骤S1：预处理，通过采用KOH和H2O2预清洗去除硅片表面脏污；S2：漂洗，采用纯水对硅片进行漂洗；S3：碱背抛，采用强碱和碱背抛添加剂，碱背抛添加剂能够进一步抑制KOH和正面PSG反应，加速KOH与背面硅进行刻蚀；S4：后清洗，清洗添加剂残留；S5：酸洗，采用HF和HCL的混合溶液进行清洗；S6：漂洗，采用纯水对硅片进行漂洗；S7：慢提拉，慢提拉水温设置为60～90度；S8：烘干，对硅片进行烘干。本发明具有以下优势：碱背抛成本低，无氮排放，且能进一步提升电池效率，将热氧和磷硅玻璃PSG清洗整合在一起。简化了碱背抛工艺流程，减少了操作人员数量，降低了生产成本。The invention relates to a processing method of a PERC cell, which includes a back etching process, and the back etching process includes the following steps S1: pretreatment, by using KOH and H2O2 for precleaning to remove contamination on the surface of a silicon wafer; S2: rinsing, using pure water The wafer is rinsed; S3: Alkali back polishing, using strong alkali and alkali back polishing additive, the alkali back polishing additive can further inhibit the reaction of KOH and front PSG, and accelerate the etching of KOH and back silicon; S4: Post cleaning, cleaning additive residue; S5: Pickling, using a mixed solution of HF and HCL for cleaning; S6: Rinsing, using pure water to rinse the silicon wafer; S7: Slow pulling, the water temperature is set to 60-90 degrees; Dry the wafer. The invention has the following advantages: low cost of alkali back throwing, no nitrogen emission, and can further improve battery efficiency, and integrates thermal oxygen and phosphosilicate glass PSG cleaning. The alkaline back polishing process is simplified, the number of operators is reduced, and the production cost is reduced.
Description
技术领域technical field
本发明涉及光伏电池技术领域，特别涉及一种PERC电池的加工方法。The invention relates to the technical field of photovoltaic cells, in particular to a processing method of a PERC cell.
背景技术Background technique
PERC电池通过对背场进行进一步钝化从而拥有更高的效率和性价比，近年发展十分迅速并逐步对常规铝背场晶硅电池进行取代，各光伏企业也在持续进行PERC电池扩产。PERC电池整个工艺过程包括：1.制绒—2.扩散—3.激光SE—4.刻蚀—5.正面镀膜—6.背面镀膜—7.激光开槽—8.丝网印刷—9.烧结，传统的刻蚀工艺采用的是HF/HNO3体系，抛光效果一般、成本高而且伴随氮排放不环保，而碱背抛成本低抛光效果更好表面更平整，效率可以提升0.1%，而且更环保，因此整个光伏行业都希望开发利用碱抛光体系取代常规酸抛。PERC cells have higher efficiency and cost-effectiveness by further passivating the back field. In recent years, they have developed rapidly and gradually replaced conventional aluminum back field crystalline silicon cells. Various photovoltaic companies are also continuing to expand the production of PERC cells. The whole process of PERC battery includes: 1. Texturing - 2. Diffusion - 3. Laser SE - 4. Etching - 5. Front Coating - 6. Back Coating - 7. Laser Slotting - 8. Screen Printing - 9. Sintering, the traditional etching process uses HF/HNO3 system, the polishing effect is general, the cost is high, and it is not environmentally friendly with nitrogen emissions, while the alkali back polishing has a low cost and better polishing effect, and the surface is smoother, the efficiency can be increased by 0.1%, and more Environmental protection, so the entire photovoltaic industry hopes to develop and use alkali polishing system to replace conventional acid polishing.
目前市面已有相对成熟的碱背抛添加剂和背抛光方案，但是由于SE会破坏扩散后硅片表面形成的磷硅玻璃PSG，而碱背抛添加剂的工艺原理是抑制与磷硅玻璃面的反应而加速背面硅的反应从而在不破坏正面结构的同时对背面进行背抛光。这样由于SE部分没有磷硅玻璃保护碱背抛过程中会对SE部分进行腐蚀，无法通过SE提升电池效率。因此当前行业内普遍采用的工艺方案是SE后通过管式炉进行热氧化将SE部分的硅重新氧化成磷硅玻璃PSG，然后通过链式机去背面磷硅玻璃，最后通过槽式机进行碱背抛，整个工艺即：1.制绒—2.扩散—3.激光SE—4.（管式热氧化+链式去背面PSG+槽式碱刻蚀）—5.正面镀膜—6.背面镀膜—7.激光开槽—8.丝网印刷—9.烧结。At present, there are relatively mature alkali back polishing additives and back polishing solutions on the market, but since SE will destroy the phosphosilicate glass PSG formed on the surface of the silicon wafer after diffusion, the process principle of the alkali back polishing additive is to inhibit the reaction with the phosphosilicate glass surface. Instead, the reaction of the backside silicon is accelerated to backpolish the backside without destroying the frontside structure. In this way, since the SE part is not protected by phosphosilicate glass, the SE part will be corroded during the alkali back-throwing process, and the cell efficiency cannot be improved by SE. Therefore, the process scheme commonly used in the current industry is to re-oxidize the silicon in the SE part into phosphosilicate glass PSG through thermal oxidation after SE, and then remove the back phosphosilicate glass through a chain machine, and finally conduct alkali through a trough machine. Back polishing, the whole process is: 1. Texturing - 2. Diffusion - 3. Laser SE - 4. (Tubular thermal oxidation + chain type PSG to the back + groove alkali etching) - 5. Front coating - 6. Back coating - 7. Laser grooving - 8. Screen printing - 9. Sintering.
现有技术具有以下缺陷：1.目前的酸背抛，抛光效果差，电池效率低，成本高且不环保。2.现有碱背抛方案，需增加三套设备，设备投入及生产成本都非常高。3.现有碱背抛方案无法很好的兼容SE工艺，管式热氧方案过于复杂。The prior art has the following defects: 1. The current acid back polishing has poor polishing effect, low battery efficiency, high cost and is not environmentally friendly. 2. The existing alkali back throwing scheme needs to add three sets of equipment, and the equipment investment and production cost are very high. 3. The existing alkali back throwing scheme cannot be well compatible with the SE process, and the tubular thermal oxygen scheme is too complicated.
发明内容SUMMARY OF THE INVENTION
本发明中的术语解释如下：Terms in the present invention are explained as follows:
碱背抛：用碱体系，通过碱和硅的化学反应对电池背面进行刻蚀抛光，背面越平整反射率越高越容易钝化，电池效率越高。Alkali back polishing: The backside of the battery is etched and polished by the chemical reaction of alkali and silicon with an alkali system. The flatter the backside, the higher the reflectivity, the easier passivation and the higher the battery efficiency.
PERC电池：一种晶硅高效电池结构，通过对电池背面沉积钝化膜使电池拥有更高的电池效率。PERC cell: A crystalline silicon high-efficiency cell structure, which enables the cell to have higher cell efficiency by depositing a passivation film on the back of the cell.
SE：激光SE掺杂法是采用扩散时产生的磷硅玻璃层作为掺杂源进行激光扫描，形成重掺杂区，实现电极位置的磷重掺，这样丝网印刷后能够降低电极位置的接触电阻，提升效率。SE: The laser SE doping method uses the phosphorous silicate glass layer generated during diffusion as the doping source to perform laser scanning to form a heavily doped region and realize the phosphorous re-doping at the electrode position, so that the contact at the electrode position can be reduced after screen printing. resistance to improve efficiency.
本发明为了解决现有技术的问题，提供了一种工艺简单，成本较低，能进一步提升电池效率，将热氧和磷硅玻璃PSG清洗整合的一种PERC电池的加工方法。In order to solve the problems of the prior art, the present invention provides a processing method of a PERC battery which has simple process, low cost, can further improve the battery efficiency, and integrates thermal oxygen and phosphosilicate glass PSG cleaning.
具体技术方案如下：一种PERC电池的加工方法，包括背蚀刻工艺，背蚀刻工艺包括以下步骤：The specific technical scheme is as follows: a processing method of a PERC battery, comprising a back etching process, and the back etching process comprises the following steps:
S1：预处理，通过采用KOH和H2O2预清洗去除硅片表面脏污；S1: Pretreatment, removing the contamination on the surface of the silicon wafer by pre-cleaning with KOH and H2O2;
S2：漂洗，采用纯水对硅片进行漂洗；S2: rinsing, using pure water to rinse the silicon wafer;
S3：碱背抛，采用强碱和碱背抛添加剂，碱背抛添加剂能够进一步抑制KOH和正面PSG反应，加速KOH与背面硅进行刻蚀；S3: Alkali back polishing, using strong alkali and alkali back polishing additive, the alkali back polishing additive can further inhibit the reaction of KOH and PSG on the front side, and accelerate the etching of KOH and silicon on the back side;
S4：后清洗，清洗添加剂残留；S4: Post cleaning, cleaning additive residue;
S5：酸洗，采用HF和HCL的混合溶液进行清洗；S5: Pickling, using a mixed solution of HF and HCL for cleaning;
S6：漂洗，采用纯水对硅片进行漂洗；S6: rinsing, using pure water to rinse the silicon wafer;
S7：慢提拉，慢提拉水温设置为60～90度；S7: Slow lifting, the water temperature for slow lifting is set to 60-90 degrees;
S8：烘干，对硅片进行烘干。S8: drying, drying the silicon wafer.
以下为本发明的附属技术方案。The following are the subsidiary technical solutions of the present invention.
进一步的，在进行背蚀刻工艺之前，先进行链式氧化工艺，链式氧化工艺包括以下步骤：Further, before the back etching process is performed, a chain oxidation process is performed first, and the chain oxidation process includes the following steps:
S10：上料，激光SE后硅片正面朝上；S10: Loading, the front side of the silicon wafer is facing up after laser SE;
S20：热氧化，硅片氧化，氧化腔体温度范围为500～900度，氧气通入流量为0.1~20slm，氮气通入流量为0.1-20slm；S20: thermal oxidation, silicon wafer oxidation, the temperature range of the oxidation chamber is 500-900 degrees, the oxygen inlet flow is 0.1-20slm, and the nitrogen inlet flow is 0.1-20slm;
S30：喷水膜，氧化完成后表面喷射水膜；S30: water spray film, after the oxidation is completed, the surface is sprayed with water film;
S40：酸洗，在酸槽中采用浓度为2～20%HF酸清洗，清洗掉背面和四周的磷硅玻璃psg从而后续可通过槽式机对背面进行碱刻蚀；S40: Pickling, using 2-20% HF acid in the acid tank to clean the phosphosilicate glass psg on the back and around it, so that the back can be alkali-etched by the tank machine later;
S50：漂洗，在水槽中进行漂洗；S50: rinsing, rinsing in a sink;
S60：烘干，将硅片表面水吹干；S60: drying, drying the surface of the silicon wafer with water;
S70：下料，通过下料机构使硅片下料。S70: Unloading, the silicon wafer is unloaded through the unloading mechanism.
进一步的，所述步骤S1中，所述KOH和H2O2 浓度范围为5～30%，温度为50～75度。Further, in the step S1, the concentration range of the KOH and H 2 O 2 is 5-30%, and the temperature is 50-75 degrees.
进一步的，步骤S3中，所述强碱为碱浓度为5～30%的KOH或者NaOH。Further, in step S3, the strong base is KOH or NaOH with an alkali concentration of 5-30%.
进一步的，步骤S4中，通过采用KOH和H2O2进行清洗。Further, in step S4, cleaning is performed by using KOH and H 2 O 2 .
进一步的，步骤S5中，HF和HCL的浓度为10～50%。Further, in step S5, the concentrations of HF and HCL are 10-50%.
进一步的，步骤S8中，烘干温度为80～95度，通过鼓风机和高效过滤器持续鼓风同时通入1～20slm氮气。Further, in step S8, the drying temperature is 80 to 95 degrees, and 1 to 20 slm of nitrogen gas is fed continuously through the blower and the high-efficiency filter.
进一步的，在步骤S30中，喷水膜是在硅片表面喷射一定量的纯水，在表面张力作用下纯水均匀分布在硅片表面进行保护。Further, in step S30, the water spray film sprays a certain amount of pure water on the surface of the silicon wafer, and the pure water is evenly distributed on the surface of the silicon wafer for protection under the action of surface tension.
进一步的，在步骤S20中，氧化腔体长度为20～1000cm。Further, in step S20, the length of the oxidation cavity is 20-1000 cm.
进一步的，步骤S1工艺时间为1-3min，步骤S2工艺时间为1-3min，步骤S1工艺时间为3-6min，步骤S4工艺时间为1-3min，步骤S5工艺时间为1-3min，步骤S6工艺时间为1-3min，步骤S7工艺时间为1-3min；步骤S8工艺时间为6-8min。Further, the process time of step S1 is 1-3min, the process time of step S2 is 1-3min, the process time of step S1 is 3-6min, the process time of step S4 is 1-3min, the process time of step S5 is 1-3min, and the process time of step S6 is 1-3min. The process time is 1-3min, the process time of step S7 is 1-3min; the process time of step S8 is 6-8min.
本发明的技术效果：本发明的一种PERC电池的加工方法具有以下优势：1、碱背抛成本低，无氮排放，且能进一步提升电池效率。2、开创性的开发了链式热氧，将热氧和磷硅玻璃PSG清洗整合在一起。3、简化了碱背抛工艺流程，减少了操作人员数量，降低了生产成本。Technical effect of the present invention: The processing method of a PERC battery of the present invention has the following advantages: 1. The cost of alkali back throwing is low, there is no nitrogen emission, and the battery efficiency can be further improved. 2. Pioneering development of chain hot oxygen, which integrates hot oxygen and phosphosilicate glass PSG cleaning. 3. Simplifies the alkaline back throwing process, reduces the number of operators, and reduces production costs.
具体实施方式Detailed ways
下面，结合实例对本发明的实质性特点和优势作进一步的说明，但本发明并不局限于所列的实施例。Hereinafter, the substantial features and advantages of the present invention will be further described with reference to examples, but the present invention is not limited to the listed embodiments.
本实施例的一种PERC电池的加工方法，包括背蚀刻工艺，背蚀刻工艺包括以下步骤：S1：预处理，通过采用KOH和H2O2预清洗去除硅片表面脏污；S2：漂洗，采用纯水对硅片进行漂洗；S3：碱背抛，采用强碱和碱背抛添加剂，碱背抛添加剂能够进一步抑制KOH和正面PSG反应，加速KOH与背面硅进行刻蚀；S4：后清洗，清洗添加剂残留；S5：酸洗，采用HF和HCL的混合溶液进行清洗；S6：漂洗，采用纯水对硅片进行漂洗；S7：慢提拉，慢提拉水温设置为60～90度；S8：烘干，对硅片进行烘干。上述技术方案简化了碱背抛工艺流程，减少了操作人员数量，降低了生产成本；此外，无氮排放，且能进一步提升电池效率。本实施例中，步骤S1工艺时间为1-3min，步骤S2工艺时间为1-3min，步骤S1工艺时间为3-6min，步骤S4工艺时间为1-3min，步骤S5工艺时间为1-3min，步骤S6工艺时间为1-3min，步骤S7工艺时间为1-3min；步骤S8工艺时间为6-8min。A method for processing a PERC cell in this embodiment includes a back etching process, and the back etching process includes the following steps: S1: pretreatment, removing contamination on the surface of the silicon wafer by pre-cleaning with KOH and H 2 O 2 ; S2: rinsing, The silicon wafer is rinsed with pure water; S3: Alkali back polishing, using strong alkali and alkali back polishing additive, the alkali back polishing additive can further inhibit the reaction of KOH and PSG on the front side, and accelerate the etching of KOH and silicon on the back side; S4: Post cleaning , cleaning additive residue; S5: pickling, using a mixed solution of HF and HCL for cleaning; S6: rinsing, using pure water to rinse the silicon wafer; S7: slow pulling, the slow pulling water temperature is set to 60 ~ 90 degrees; S8: drying, drying the silicon wafer. The above technical solution simplifies the alkaline back throwing process, reduces the number of operators, and reduces the production cost; in addition, there is no nitrogen emission, and the battery efficiency can be further improved. In this embodiment, the process time of step S1 is 1-3min, the process time of step S2 is 1-3min, the process time of step S1 is 3-6min, the process time of step S4 is 1-3min, the process time of step S5 is 1-3min, The process time of step S6 is 1-3min, the process time of step S7 is 1-3min, and the process time of step S8 is 6-8min.
本实施例中，所述步骤S1中，所述KOH和H2O2浓度范围为5～30%，温度为50～75度。In this embodiment, in the step S1, the concentration range of the KOH and H 2 O 2 is 5-30%, and the temperature is 50-75 degrees.
本实施例中，步骤S3中，所述强碱为碱浓度为5～30%的KOH或者NaOH，进一步抑制KOH和正面PSG反应。In this embodiment, in step S3, the strong base is KOH or NaOH with an alkali concentration of 5-30%, which further inhibits the reaction between KOH and positive PSG.
本实施例中，步骤S4中，通过采用KOH和H2O2进行清洗。In this embodiment, in step S4, KOH and H 2 O 2 are used for cleaning.
本实施例中，步骤S5中，HF和HCL的浓度为10～50%。In this embodiment, in step S5, the concentrations of HF and HCL are 10-50%.
本实施例中，步骤S8中，烘干温度为80～95度，通过鼓风机和高效过滤器持续鼓风同时通入1～20slm氮气。In this embodiment, in step S8, the drying temperature is 80 to 95 degrees, and 1 to 20 slm of nitrogen gas is fed continuously through the blower and the high-efficiency filter.
本实施例中，在进行背蚀刻工艺之前，先进行链式氧化工艺，链式氧化工艺包括以下步骤：In this embodiment, before the back etching process is performed, a chain oxidation process is performed, and the chain oxidation process includes the following steps:
S10：上料，激光SE后硅片正面朝上；S20：热氧化，硅片氧化，氧化腔体温度范围为500～900度，氧气通入流量为0.1~20slm，氮气通入流量为0.1-20slm；S30：喷水膜，氧化完成后表面喷射水膜；S40：酸洗，在酸槽中采用浓度为2～20%HF酸清洗，清洗掉背面和四周的磷硅玻璃psg从而后续可通过槽式机对背面进行碱刻蚀；S50：漂洗，在水槽中进行漂洗；S60：烘干，将硅片表面水吹干；S70：下料，通过下料机构使硅片下料，具体的，通过下料机构将硅片依次插入花篮中。通过上述技术方案，开创性的开发了链式热氧，将热氧和磷硅玻璃PSG清洗整合到一起。S10: Loading, the front side of the silicon wafer is facing up after laser SE; S20: Thermal oxidation, silicon wafer oxidation, the temperature range of the oxidation chamber is 500~900 degrees, the oxygen flow rate is 0.1~20slm, and the nitrogen flow rate is 0.1- 20slm; S30: water spray film, after the oxidation is completed, the surface is sprayed with water film; S40: pickling, using 2-20% HF acid cleaning in the acid tank, cleaning the back and surrounding phosphosilicate glass psg so that it can be passed Alkaline etching is performed on the back of the trough machine; S50: rinsing, rinsing in a water tank; S60: drying, drying the surface of the silicon wafer; S70: unloading, the silicon wafer is unloaded through the unloading mechanism, the specific , and insert the silicon wafers into the flower basket in turn through the blanking mechanism. Through the above technical solutions, the pioneering development of chain thermal oxygen, which integrates thermal oxygen and phosphosilicate glass PSG cleaning.
本实施例中，在步骤S30中，喷水膜是在硅片表面喷射一定量的纯水，在表面张力作用下纯水均匀分布在硅片表面进行保护。In this embodiment, in step S30, the water spray film sprays a certain amount of pure water on the surface of the silicon wafer, and the pure water is evenly distributed on the surface of the silicon wafer for protection under the action of surface tension.
本实施例中，在步骤S20中，氧化腔体长度为20～1000cm。In this embodiment, in step S20, the length of the oxidation cavity is 20-1000 cm.
本实施例中，在步骤S10中，硅片盛放在载片盒中上料。In this embodiment, in step S10, the silicon wafers are placed in the wafer cassette for loading.
本实施例在进行链式氧化工艺时采用链式热氧和磷硅玻璃清洗一体机，激光SE后硅片正面朝上放置进入链式热氧和磷硅玻璃清洗一体机。链式热氧和磷硅玻璃清洗一体机包括自动上料装置，氧化单元，清洗单元和下料单元。具体的，所述上料装置包括载片盒，吹气头和真空吸盘，载片盒用于盛放硅片，所述载片盒容量为200～800片。吹气头用于将硅片分离的，吹气头通过对堆叠在一起的硅片上沿进行吹气使硅片相互分离，方便后续吸盘吸附；真空吸盘用于将硅片吸附，硅片通过吸盘吸附从载片盒移至传送皮带上，再通过伺服电机带动皮带转动。所述氧化单元包括陶瓷滚轮，石英外壳，加热灯管，通气系统和抽风装置，所述陶瓷滚轮可选的材质包括zro2、Al2O3、TiO2等为基体的耐高温耐腐蚀的高强度陶瓷材料，所述滚轮间距设定为1～20cm，滚轮根数为5～50根，氧化腔体长度为20～1000cm，可选的所述链式机可为匹配前后工序产能的5、8、10道链式机型。所述石英外壳优选的可采用方形或者弧形腔体结构，石英外壳内部均匀排布加热灯管，同时外壳表面包覆保温隔热棉。通气系统用于供应氧气和氮气，所述氧气氮气通过石英管均匀排布在氧化腔体底部，同时石英管上均匀分布圆孔，确保气体均匀通入。石英外壳两侧设置抽风系统，以阻隔相邻槽体酸气、脏污颗粒进入氧化腔体内。所述清洗单元包括水膜装置、酸槽、水槽和烘干装置，水膜装置通过电磁阀的控制在硅片经过装置时在硅片表面喷射一定量的纯水，在表面张力作用下纯水均匀分布在硅片表面进行保护。酸槽由补水系统和HF补液系统组成，该酸槽用于去除侧面和背面psg磷硅玻璃，正面在水膜保护下不会进行反应。下料单元包括传动滚轮，花篮装载区和花篮传动匹皮带，从而将硅片输出。In this embodiment, a chain-type thermal oxygen and phosphosilicate glass cleaning integrated machine is used in the chain oxidation process. After laser SE, the silicon wafer is placed face up into the chain-type thermal oxygen and phosphosilicate glass cleaning integrated machine. The chain type hot oxygen and phosphosilicate glass cleaning machine includes automatic feeding device, oxidation unit, cleaning unit and unloading unit. Specifically, the feeding device includes a carrier box, an air blowing head and a vacuum suction cup, the carrier box is used for holding silicon wafers, and the capacity of the carrier box is 200-800 pieces. The blowing head is used to separate the silicon wafers. The blowing head separates the silicon wafers from each other by blowing the upper edge of the stacked silicon wafers, which is convenient for subsequent suction cup adsorption; the vacuum suction cup is used to adsorb the silicon wafers, and the silicon wafers pass through The suction cup moves from the cassette to the conveyor belt, and then drives the belt to rotate through the servo motor. The oxidation unit includes a ceramic roller, a quartz shell, a heating lamp tube, a ventilation system and an air extraction device. The optional material of the ceramic roller includes zro2, Al2O3, TiO2 and other high-temperature and corrosion-resistant high-strength ceramic materials as the matrix. The distance between the rollers is set to 1 to 20cm, the number of rollers is 5 to 50, and the length of the oxidation chamber is 20 to 1000cm. The optional chain machine can be 5, 8, and 10 chains that match the production capacity of the front and rear processes. type model. The quartz shell may preferably adopt a square or arc cavity structure, the heating lamps are evenly arranged inside the quartz shell, and the surface of the shell is covered with thermal insulation cotton. The ventilation system is used to supply oxygen and nitrogen, the oxygen and nitrogen are evenly arranged at the bottom of the oxidation chamber through the quartz tube, and the round holes are evenly distributed on the quartz tube to ensure the uniform passage of gas. An exhaust system is set on both sides of the quartz shell to prevent the acid gas and dirty particles from the adjacent tank from entering the oxidation chamber. The cleaning unit includes a water film device, an acid tank, a water tank and a drying device. The water film device is controlled by a solenoid valve to spray a certain amount of pure water on the surface of the silicon wafer when the silicon wafer passes through the device. Under the action of surface tension, the pure water is Evenly distributed on the surface of the silicon wafer for protection. The acid tank is composed of a water replenishment system and an HF replenishment system. The acid tank is used to remove the psg phosphosilicate glass on the side and back, and the front will not react under the protection of the water film. The unloading unit includes drive rollers, flower basket loading area and flower basket drive belts to output the wafers.
本实施例的一种PERC电池的加工方法具有以下优势：1、碱背抛成本低，无氮排放，且能进一步提升电池效率。2、开创性的开发了链式热氧，将热氧和磷硅玻璃PSG清洗整合在一起。3、简化了碱背抛工艺流程，减少了操作人员数量，降低了生产成本。The processing method of a PERC cell in this embodiment has the following advantages: 1. The cost of alkali back throwing is low, there is no nitrogen emission, and the cell efficiency can be further improved. 2. Pioneering development of chain hot oxygen, which integrates hot oxygen and phosphosilicate glass PSG cleaning. 3. Simplifies the alkaline back throwing process, reduces the number of operators, and reduces production costs.
需要指出的是，上述较佳实施例仅为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。It should be pointed out that the above-mentioned preferred embodiment is only to illustrate the technical concept and characteristics of the present invention, and its purpose is to enable those who are familiar with the technology to understand the content of the present invention and implement it accordingly, and cannot limit the present invention. protected range. All equivalent changes or modifications made according to the spirit of the present invention should be included within the protection scope of the present invention.
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