CN110670049A - Vapor deposition method and device - Google Patents
Vapor deposition method and device Download PDFInfo
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- CN110670049A CN110670049A CN201911136150.4A CN201911136150A CN110670049A CN 110670049 A CN110670049 A CN 110670049A CN 201911136150 A CN201911136150 A CN 201911136150A CN 110670049 A CN110670049 A CN 110670049A
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- vapor deposition
- reaction cavity
- deposition method
- reaction chamber
- cover
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000003860 storage Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 230000007723 transport mechanism Effects 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 6
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 5
- 238000005019 vapor deposition process Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a vapor deposition method and a vapor deposition device, which belong to the technical field of semiconductors, and the method comprises the following steps: the covering object covers the surface of the substrate bearing mechanism of the reaction cavity before the reaction cavity carries out a preset process, and the covering object is conveyed out of the reaction cavity after the reaction cavity finishes the preset process; the device comprises: a temporary storage position for storing the covering; at least one reaction chamber for performing a predetermined process; the conveying mechanism is used for conveying the covering object between the temporary storage position and at least one reaction cavity. The beneficial effects of the above technical scheme are: through setting up a cover in advance, avoid the bearing surface of substrate bearing device being contaminated by the precoating, thoroughly eliminated the reason that the particle at wafer back produced, simultaneously, the protection through the cover has effectively prolonged the life of substrate bearing device and the clean cycle of reaction chamber, has reduced the manufacturing cost of enterprise, has improved the work efficiency of deposition board.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a vapor deposition method and a vapor deposition device.
Background
Vapor deposition is a chemical technology, the technology mainly utilizes the gaseous reactant or liquid reactant steam containing film elements and other gases required by the reaction to be introduced into a reaction chamber, and the process of generating a film by reaction on the surface of a substrate, the vapor deposition technology has wider application in the semiconductor industry, especially in a super large scale integrated circuit, a plurality of films are prepared by a vapor deposition method, and the technology is characterized in that the deposition temperature is low, the film components are easy to control, the film thickness is in direct proportion to the deposition time, the uniformity of a surface treatment film is good, the repeatability is good, and the step coverage is excellent.
In the prior art, the vapor deposition of the wafer is usually performed by transferring the wafer into a reaction chamber of a vapor deposition machine, the wafer is adsorbed on a substrate bearing device by static electricity during the vapor deposition process of the reaction chamber for growing a film, because the reaction chamber needs to perform a pre-coating process on the chamber before vapor deposition, the substrate bearing device is also covered by the film pre-coated in the chamber, during the vapor deposition process, the back of the wafer contacts with the substrate bearing device, and at this time, the pre-coating film on the surface of the substrate bearing device adheres to the back of the wafer due to the high temperature, vacuum and other environments in the reaction chamber, thereby generating particles on the back of the wafer, reducing the quality of the wafer, meanwhile, the pre-coating film on the surface of the substrate bearing device also reduces the service life of the bearing device, and because the reaction chamber needs to be opened periodically to clean the pre-coating film on the substrate bearing device, greatly reducing the working efficiency of the deposition machine.
Disclosure of Invention
According to the problems in the prior art, a covering object is preset in the vapor deposition device, and the covering object is covered on the surface of the substrate bearing device of the corresponding reaction chamber before the preset procedure is carried out in the deposition machine table through a preset program, so that the bearing surface of the substrate bearing device is prevented from being polluted in the procedure, the reason for generating particles on the back of a wafer is thoroughly eliminated, meanwhile, the service life of the substrate bearing device and the cleaning period of the reaction chamber are effectively prolonged through the protection of the covering object, the production cost of an enterprise is reduced, and the working efficiency of the deposition machine table is improved.
The technical scheme specifically comprises the following steps:
a vapor deposition method is applied to a vapor deposition device, wherein a cover is provided, and the cover is used for covering the surface of a substrate bearing mechanism of a reaction cavity of the deposition device before a preset process is carried out in the reaction cavity;
and after the reaction cavity finishes the preset process, conveying the covering out of the reaction cavity.
Preferably, the predetermined process is a pre-plating process, and/or a cavity cleaning process.
Preferably, wherein the substrate carrying mechanism is an electrostatic chuck.
Preferably, the cover is the same shape and the same size as the wafer to be deposited in the deposition device.
Preferably, the material of the cover is aluminum nitride;
preferably, wherein the cover surface roughness is less than 60 Ra.
Preferably, wherein the warp of the cover is less than 0.3%.
A vapor deposition apparatus, characterized by employing the vapor deposition method as described above, further comprising:
a temporary storage position for storing the covering;
at least one reaction chamber for performing the predetermined process;
and the conveying mechanism is used for conveying the covering object between the temporary storage position and the at least one reaction cavity.
Preferably, the wafer cooling system further comprises a wafer cooling station, and the temporary storage position is the wafer cooling station.
Preferably, the device further comprises a mechanical arm, and the conveying mechanism is the mechanical arm.
The beneficial effects of the above technical scheme are that: the method is characterized in that a covering object is preset in a vapor deposition device, and the covering object is covered on the surface of a substrate bearing device of a corresponding reaction chamber before a preset procedure is carried out in a deposition machine table through a preset procedure, so that the bearing surface of the substrate bearing device is prevented from being polluted in the procedure, the reason for generating particles on the back of a wafer is thoroughly eliminated, meanwhile, the service life of the substrate bearing device and the cleaning period of the reaction chamber are effectively prolonged through the protection of the covering object, the production cost of an enterprise is reduced, and the working efficiency of the deposition machine table is improved.
Drawings
FIG. 1 is a schematic structural view of an embodiment of a vapor deposition apparatus.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
A vapor deposition method is applied to a vapor deposition apparatus, as shown in FIG. 1, wherein a cover 1 is provided, and before a predetermined process is performed in a reaction chamber 2 of the deposition apparatus, the cover 1 covers a surface of a substrate support mechanism 3 of the reaction chamber 2;
after the reaction chamber 2 has completed the predetermined process, the cover 1 is transported out of the reaction chamber 2.
In an embodiment of the present invention, the cover 1 is pre-installed in the vapor deposition apparatus, and a corresponding automatic control program is pre-installed in a control unit of a transport mechanism of the vapor deposition apparatus, when a reaction chamber 2 in the vapor deposition apparatus needs to perform a predetermined process, the automatic control program is started to control the transport mechanism of the vapor deposition apparatus to transport the cover 1 into the corresponding reaction chamber 2 and cover the surface of a substrate support mechanism 3 for supporting a wafer to be reacted in the reaction chamber 2, so as to protect the support surface of the substrate support mechanism 3, and after the covering is completed, the reaction chamber 2 starts a predetermined process according to the predetermined program.
After the predetermined process is completed, the automatic control program is started again to control the conveying mechanism in the vapor deposition device to convey the cover 1 out of the reaction chamber 2 and to return the cover 1 to the predetermined position to wait for reuse.
In a preferred embodiment of the present invention, the predetermined process is a pre-plating process, and/or a chamber cleaning process.
In an embodiment of the present invention, the pre-coating process refers to a pre-coating process in which the vapor deposition apparatus needs to pre-coat the inner surface of the reaction chamber 2 with a silica protective film before performing the vapor deposition process on the wafer, and in the prior art, since the wafer bearing surface of the substrate bearing mechanism 3 does not have any protection device during the pre-coating process performed in the reaction chamber 2, the pre-coated silica film inevitably splashes onto the bearing surface of the substrate bearing mechanism 3, so that a silica film is also formed on the bearing surface. When the subsequent reaction chamber 2 is used for carrying out the vapor deposition process of the wafer, the back of the wafer to be deposited is directly contacted with the bearing surface of the substrate bearing mechanism 3 with the silicon dioxide film, and the silicon dioxide film on the bearing surface of the substrate bearing mechanism 3 is adhered to the back of the wafer to be deposited under the high-temperature vacuum environment in the reaction chamber 2, so that particles such as dust and particles are formed on the back of the wafer to be deposited, and the quality of the wafer is seriously influenced.
In the above embodiment, before the reaction chamber 2 in the vapor deposition apparatus starts the pre-coating process, the cover 1 is transferred to cover the carrying surface of the substrate carrying mechanism 3 through a predetermined procedure, and the cover 1 protects the carrying surface of the substrate carrying mechanism 3 from being contaminated by the pre-coating film (silicon dioxide film), so as to maintain a clean carrying surface.
Similarly, when the vapor deposition apparatus performs the chamber cleaning process for the reaction chamber 2, the contaminants on the inner surface of the reaction chamber 2 inevitably fall onto the carrying surface of the substrate carrying mechanism 3, and further contaminate the back surface of the wafer to be deposited, thereby forming dust and particles on the back surface of the wafer to be deposited.
In the preferred embodiment of the present invention, the substrate support mechanism 3 is an electrostatic chuck.
In an embodiment of the present invention, without protection in the prior art, the electrostatic chuck needs to be replaced after performing the deposition process on an average of 6 ten thousand wafers, and the electrostatic chuck improved according to the vapor deposition method has a service life that is doubled, so that the deposition process on 12 ten thousand wafers can be performed.
Meanwhile, under the condition of no protection, after the vapor deposition process of 3 thousand wafers is carried out on each reaction cavity 2, the reaction cavity needs to be opened and cleaned, pollutants on the electrostatic chuck are removed, and after the vapor deposition method is improved according to the application, the frequency of opening and cleaning the reaction cavity 2 is reduced to 5 thousand wafers per treatment, so that the manpower for opening and cleaning the reaction cavity can be saved for 6 hours per month on average per reaction cavity 2, and the production efficiency of the vapor deposition device is improved while the manpower is saved. Especially in the bonding process, the back side of the wafer needs to be further processed, such as the back side of the wafer needs to be processed with other semiconductor devices in a back-illuminated sensor, and the back side of the wafer needs to be processed with the bonding surface again in the case of multi-layer bonding, so that the solution can better improve the production yield.
In the preferred embodiment of the present invention, the cover 1 is the same shape and the same size as the wafer to be deposited in the deposition apparatus.
In an embodiment of the present invention, the shape of the cover 1 is the same as the shape of the wafer to be deposited, and the purpose is that in order to enable the transport mechanism for transporting the wafer to be deposited in the vapor deposition apparatus to also be used for transporting the cover 1, so that there is no need to provide another transport mechanism for transporting the cover 1 in the vapor deposition apparatus, and only a corresponding automatic control program needs to be preset in the control unit of the deposition apparatus, so that the deposition apparatus controls the transport mechanism to transport the cover 1 into the reaction chamber 2 before the reaction chamber 2 performs the predetermined process.
In the preferred embodiment of the present invention, the material of the cover 1 is an insulating material with small elastic deformation, such as aluminum nitride, aluminum oxide or aluminum oxynitride;
in a preferred embodiment of the invention, the surface roughness of the cover 1 is less than 60 Ra.
In a preferred embodiment of the invention, the warp of cover 1 is less than 0.3%.
In one embodiment of the present invention, the inner surface of the chamber 2 of the cover 1 of aluminum nitride is fluorinated, so that the cover 1 can be reused for a long period of time.
A vapor deposition apparatus, as shown in FIG. 1, wherein the vapor deposition method is adopted, further comprising
A temporary storage location 4 for storing the covering 1;
at least one reaction chamber 2 for performing a predetermined process;
a conveying mechanism 5 for conveying the covering object 1 between the temporary storage position 4 and at least one reaction chamber 2.
In one embodiment of the invention, the transfer mechanism 5 comprises a first robot arm 50, a second transfer arm 51 and a transfer platform 52, the second transfer arm 51 being used to transfer the cover 1 in the buffer position 4 to the transfer platform 52, and the first transfer arm 50 being used to transfer the cover 1 located in the transfer platform 52 to the reaction chamber 2.
In the preferred embodiment of the present invention, a wafer cooling station is further included, and the temporary storage location 4 is a wafer cooling station.
In the preferred embodiment of the present invention, a robot is further included, and the transfer mechanism 5 is a robot.
In an embodiment of the present invention, the mask 1 is stored in a specific position in the wafer cooling station, so that the robot can access the mask accurately, an automatic control program is preset in a control unit of the vapor deposition apparatus for controlling the robot, the automatic control program controls the robot to grab the mask 1 at the specific position and transfer the mask 1 to the corresponding reaction chamber 2 before each reaction chamber 2 of the deposition apparatus performs a predetermined process, and the automatic control program controls the robot to transfer the mask 1 out of the reaction chamber 2 and return the mask 1 to the specific position after the reaction chamber 2 completes the predetermined process.
The beneficial effects of the above technical scheme are that: the method is characterized in that a covering object is preset in a vapor deposition device, and the covering object is covered on the surface of a substrate bearing device of a corresponding reaction chamber before a preset procedure is carried out in a deposition machine table through a preset procedure, so that the bearing surface of the substrate bearing device is prevented from being polluted in the procedure, the reason for generating particles on the back of a wafer is thoroughly eliminated, meanwhile, the service life of the substrate bearing device and the cleaning period of the reaction chamber are effectively prolonged through the protection of the covering object, the production cost of an enterprise is reduced, and the working efficiency of the deposition machine table is improved.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A vapor deposition method is applied to a vapor deposition device and is characterized in that a cover is provided, and the cover is used for covering the surface of a substrate bearing mechanism of a reaction cavity of the deposition device before a preset process is carried out in the reaction cavity;
and after the reaction cavity finishes the preset process, conveying the covering out of the reaction cavity.
2. The vapor deposition method according to claim 1, wherein the predetermined process is a pre-plating process, and/or a chamber cleaning process.
3. A vapor deposition method according to claim 1, wherein the substrate carrying mechanism is an electrostatic chuck.
4. A vapor deposition method according to claim 1, wherein the mask is the same shape and the same size as the wafer to be deposited in the deposition apparatus.
5. The vapor deposition method of claim 1, wherein the mask is aluminum nitride, aluminum oxide, or aluminum oxynitride.
6. A vapour deposition method according to claim 1, wherein the mask surface roughness is less than 60 Ra.
7. A vapour deposition method according to claim 1, wherein the warp of the mask is less than 0.3%.
8. A vapor deposition apparatus, comprising:
a temporary storage position for storing the covering;
at least one reaction chamber for performing a predetermined process;
and the conveying mechanism is used for conveying the covering object between the temporary storage position and the at least one reaction cavity before the at least one reaction cavity executes the preset process.
9. The vapor deposition apparatus of claim 8, further comprising a wafer cooling station, wherein the staging location is the wafer cooling station.
10. The vapor deposition apparatus of claim 8, wherein the transport mechanism comprises a first robot arm, a second transport arm and a transport platform, the second transport arm for transporting the mask in the staging position to the transport platform, the first transport arm for transporting the mask positioned in the transport platform to the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911136150.4A CN110670049A (en) | 2019-11-19 | 2019-11-19 | Vapor deposition method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911136150.4A CN110670049A (en) | 2019-11-19 | 2019-11-19 | Vapor deposition method and device |
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| Publication Number | Publication Date |
|---|---|
| CN110670049A true CN110670049A (en) | 2020-01-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201911136150.4A Pending CN110670049A (en) | 2019-11-19 | 2019-11-19 | Vapor deposition method and device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170050A (en) * | 2006-10-24 | 2008-04-30 | 联华电子股份有限公司 | Method for cleaning reaction chamber, method for forming protective film, and protective wafer |
| CN101241854A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | A wafer production technology |
| CN101563560A (en) * | 2006-12-19 | 2009-10-21 | 应用材料公司 | Non-contact process kit |
| US20100048001A1 (en) * | 2007-11-16 | 2010-02-25 | Atsushi Harikai | Plasma dicing apparatus and method of manufacturing semiconductor chips |
| CN101800164A (en) * | 2006-10-24 | 2010-08-11 | 联华电子股份有限公司 | Protective wafer |
| CN103021916A (en) * | 2012-12-05 | 2013-04-03 | 沈阳拓荆科技有限公司 | Wafer transmission system |
| CN208378998U (en) * | 2018-06-21 | 2019-01-15 | 上海陛通半导体能源科技股份有限公司 | 12 inches of Multi-function extension chemical deposition processing procedure chamber equipment |
-
2019
- 2019-11-19 CN CN201911136150.4A patent/CN110670049A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170050A (en) * | 2006-10-24 | 2008-04-30 | 联华电子股份有限公司 | Method for cleaning reaction chamber, method for forming protective film, and protective wafer |
| CN101800164A (en) * | 2006-10-24 | 2010-08-11 | 联华电子股份有限公司 | Protective wafer |
| CN101563560A (en) * | 2006-12-19 | 2009-10-21 | 应用材料公司 | Non-contact process kit |
| CN101241854A (en) * | 2007-02-06 | 2008-08-13 | 中芯国际集成电路制造(上海)有限公司 | A wafer production technology |
| US20100048001A1 (en) * | 2007-11-16 | 2010-02-25 | Atsushi Harikai | Plasma dicing apparatus and method of manufacturing semiconductor chips |
| CN103021916A (en) * | 2012-12-05 | 2013-04-03 | 沈阳拓荆科技有限公司 | Wafer transmission system |
| CN208378998U (en) * | 2018-06-21 | 2019-01-15 | 上海陛通半导体能源科技股份有限公司 | 12 inches of Multi-function extension chemical deposition processing procedure chamber equipment |
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