CN110634737B - Dressing method of grinding tool and wafer for dressing - Google Patents
Dressing method of grinding tool and wafer for dressing Download PDFInfo
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- CN110634737B CN110634737B CN201910531140.4A CN201910531140A CN110634737B CN 110634737 B CN110634737 B CN 110634737B CN 201910531140 A CN201910531140 A CN 201910531140A CN 110634737 B CN110634737 B CN 110634737B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
技术领域Technical field
本发明涉及对磨削磨具的磨削面进行修锐的磨削磨具的修锐方法和修锐用晶片。The present invention relates to a grinding tool sharpening method and a sharpening wafer for sharpening the grinding surface of the grinding tool.
背景技术Background technique
在对半导体晶片等各种板状的被加工物进行磨削时，使用了在磨轮基台呈环状配设有多个磨削磨具的磨削磨轮。磨削磨具是将金刚石磨粒用树脂结合剂、陶瓷结合剂、金属结合剂等固定而形成的，通过成为磨粒从结合剂局部地突出的所谓修锐的状态而得到良好的磨削结果。When grinding various plate-shaped workpieces such as semiconductor wafers, a grinding wheel is used in which a plurality of grinding wheels are annularly arranged on a grinding wheel base. A grinding tool is formed by fixing diamond abrasive grains with a resin bond, a ceramic bond, a metal bond, etc., and obtains good grinding results by being in a so-called sharpened state in which the abrasive grains partially protrude from the bond. .
因此，需要进行修整作业和修锐作业(预磨削或预切割)，在该修整作业中，在磨削前对产品以外的被加工物进行磨削，从而消耗结合剂而使磨粒突出，该修锐作业用于使突出状态成为最适合产品的状态。Therefore, dressing work and sharpening work (pre-grinding or pre-cutting) are required. In this dressing work, the workpiece other than the product is ground before grinding, thereby consuming the binder and causing the abrasive grains to protrude. This sharpening operation is used to make the protruding state optimal for the product.
通常，修锐作业是对与产品同样材质的物质进行磨削而实施的，因此例如在硅晶片是产品的情况下，对多张调试级硅晶片(Dummy silicon wafer)进行磨削而实施修锐作业。Normally, the sharpening operation is performed by grinding a substance made of the same material as the product. Therefore, for example, when a silicon wafer is a product, a plurality of dummy silicon wafers (Dummy silicon wafers) are ground and sharpened. Operation.
专利文献1：日本特开2008-221360号公报Patent Document 1: Japanese Patent Application Publication No. 2008-221360
但是，存在如下的课题：当对多张调试级硅晶片进行磨削而实施修锐作业时，要花费用于准备多张调试级硅晶片的成本。However, there is a problem that when a plurality of debug-grade silicon wafers are ground and sharpened, the cost of preparing a plurality of debug-grade silicon wafers is incurred.
发明内容Contents of the invention
本发明是鉴于这样的点而完成的，其目的在于提供磨削磨具的修锐方法，能够减少在修锐作业中使用的调试级晶片的使用张数，能够有效地实施磨削磨具的修锐作业。The present invention was made in view of the above points, and its object is to provide a method for sharpening a grinding tool, which can reduce the number of debugging grade wafers used in the sharpening operation and can effectively carry out the grinding process of the grinding tool. Sharpening work.
根据技术方案1所述的发明，提供磨削磨具的修锐方法，该磨削磨具的修锐方法使用了磨削装置，该磨削装置具有：卡盘工作台，其利用保持面对被加工物进行保持；磨削单元，其将呈环状配置有多个磨削磨具的磨削磨轮安装于具有与该保持面垂直的旋转轴的主轴上，对该卡盘工作台所保持的被加工物进行磨削；以及磨削进给单元，其将该磨削单元在该旋转轴方向上进行磨削进给，该磨削磨具的修锐方法的特征在于，一边使该主轴旋转一边将该磨削单元进行磨削进给，在不使该卡盘工作台旋转的情况下对该卡盘工作台所保持的被加工物进行磨削，在该被加工物的正面形成圆弧状的磨削槽。According to the invention described in claim 1, a method for sharpening a grinding tool is provided. The method for sharpening a grinding tool uses a grinding device. The grinding device has a chuck table that utilizes a holding surface to The workpiece is held; the grinding unit installs a grinding wheel with a plurality of grinding tools arranged in an annular shape on a spindle having a rotation axis perpendicular to the holding surface, and holds the chuck worktable. The workpiece is ground; and a grinding feed unit is used to grind and feed the grinding unit in the direction of the rotation axis. The sharpening method of the grinding tool is characterized by rotating the spindle while While the grinding unit is grinding and feeding, the workpiece held by the chuck table is ground without rotating the chuck table, and an arc shape is formed on the front surface of the workpiece. grinding groove.
优选在被加工物上形成多条圆弧状的磨削槽，对磨削磨具的修锐状态进行控制。It is preferable to form a plurality of arc-shaped grinding grooves on the workpiece to control the sharpening state of the grinding tool.
根据技术方案3所述的发明，提供修锐用晶片，其用于通过磨削而对磨削磨具进行修锐，其中，该修锐用晶片形成有一条或多条圆弧状的磨削槽。According to the invention described in claim 3, a sharpening wafer is provided, which is used to sharpen a grinding tool through grinding, wherein the sharpening wafer is formed with one or more arc-shaped grinding strips. groove.
根据本发明的磨削磨具的修锐方法，在不使保持着被加工物的卡盘工作台旋转的情况下进行被加工物的磨削，因此施加给磨削磨具的负荷较高，即使磨削体积较小，也得到较高的修锐效果，因此能够减少在修锐作业中使用的被加工物的张数。另外，能够根据修锐情况而在一张被加工物上形成多条圆弧状的磨削槽，因此还具有不增加被加工物的使用量便能够调整修锐磨削量的效果。According to the sharpening method of the grinding wheel of the present invention, the workpiece is ground without rotating the chuck table holding the workpiece, so the load applied to the grinding wheel is relatively high. Even if the grinding volume is small, a high sharpening effect is obtained, so the number of workpieces used in sharpening operations can be reduced. In addition, a plurality of arc-shaped grinding grooves can be formed on one workpiece according to the sharpening situation, so the amount of sharpening grinding can be adjusted without increasing the usage of the workpiece.
另外，在本发明的修锐方法中使用的被加工物形成有环状的磨削槽，与平坦的被加工物相比，磨削负荷较高，因此还具有如下的效果：也能够作为使保持着被加工物的卡盘工作台旋转并且使磨削磨具进行磨削而实施修锐作业的通常的修锐作业时的被加工物来使用。In addition, the workpiece used in the sharpening method of the present invention is formed with an annular grinding groove, and compared with a flat workpiece, the grinding load is higher, so it also has the following effect: it can also be used as a tool The chuck table holding the workpiece is used for normal sharpening operations in which the grinding tool is ground while the chuck table holding the workpiece is rotated.
附图说明Description of the drawings
图1是磨削装置的立体图。Figure 1 is a perspective view of the grinding device.
图2是示出本发明的磨削方法的局部剖视侧视图。FIG. 2 is a partially sectional side view showing the grinding method of the present invention.
图3是示出本发明的修锐方法的示意性俯视图。FIG. 3 is a schematic top view showing the sharpening method of the present invention.
图4的(A)是通过本发明的修锐方法形成了一条圆弧状的磨削槽之后的调试级硅晶片的俯视图，图4的(B)是形成了多条圆弧状的磨削槽之后的调试级硅晶片的俯视图。Figure 4 (A) is a top view of the debug-grade silicon wafer after forming an arc-shaped grinding groove by the sharpening method of the present invention. Figure 4 (B) is a plan view of a plurality of arc-shaped grinding grooves. Top view of a debug-grade silicon wafer behind the trough.
图5是示出使用具有多条圆弧状的磨削槽的调试级硅晶片并使卡盘工作台和磨削磨轮一起旋转而实施通常的修锐作业的情况的局部剖视侧视图。5 is a partial cross-sectional side view illustrating a state of performing a normal sharpening operation using a debug-grade silicon wafer having a plurality of arc-shaped grinding grooves and rotating the chuck table and the grinding wheel together.
标号说明Label description
10：磨削单元；11：调试级硅晶片；13：圆弧状的磨削槽；18：主轴；22：磨轮安装座；24：磨削磨轮；26：磨轮基台；28：磨削磨具；34：磨削进给单元；38：卡盘工作台。10: Grinding unit; 11: Debugging grade silicon wafer; 13: Arc-shaped grinding groove; 18: Spindle; 22: Grinding wheel mounting seat; 24: Grinding wheel; 26: Grinding wheel base; 28: Grinding Tool; 34: Grinding feed unit; 38: Chuck worktable.
具体实施方式Detailed ways
以下，参照附图对本发明的实施方式进行详细的说明。参照图1，示出了适合实施本发明的修锐方法的磨削装置2的外观立体图。4是磨削装置2的基座，在基座4的后方竖立设置有柱6。在柱6上固定有沿上下方向延伸的一对导轨8。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to Figure 1, there is shown an appearance perspective view of a grinding device 2 suitable for implementing the sharpening method of the present invention. 4 is the base of the grinding device 2, and a column 6 is erected behind the base 4. A pair of guide rails 8 extending in the up and down direction are fixed to the column 6 .
沿着该一对导轨8以能够在上下方向上移动的方式安装有磨削单元(磨削构件)10。磨削单元10具有主轴壳体12以及对主轴壳体12进行保持的支承部14，支承部14安装于沿着一对导轨8在上下方向上移动的移动基台16上。A grinding unit (grinding member) 10 is attached movably in the vertical direction along the pair of guide rails 8 . The grinding unit 10 has a spindle housing 12 and a support portion 14 that holds the spindle housing 12 . The support portion 14 is mounted on a moving base 16 that moves in the vertical direction along a pair of guide rails 8 .
磨削单元10包含：主轴18，其以能够旋转的方式收纳在主轴壳体12中；电动机20，其使主轴18旋转驱动；磨轮安装座22，其固定于主轴18的前端；以及磨削磨轮24，其以能够装卸的方式安装于磨轮安装座22。The grinding unit 10 includes: a spindle 18, which is rotatably stored in the spindle housing 12; a motor 20, which drives the spindle 18 to rotate; a grinding wheel mounting seat 22, which is fixed to the front end of the spindle 18; and a grinding wheel 24, which is detachably mounted on the grinding wheel mounting seat 22.
磨削装置2具有磨削进给单元34，该磨削进给单元34包含使磨削单元10沿着一对导轨8在上下方向上移动的滚珠丝杠30和脉冲电动机32。当使脉冲电动机32驱动时，滚珠丝杠30进行旋转，从而使移动基台16在上下方向上移动。The grinding device 2 has a grinding feed unit 34 including a ball screw 30 and a pulse motor 32 that move the grinding unit 10 in the up and down direction along the pair of guide rails 8 . When the pulse motor 32 is driven, the ball screw 30 rotates, thereby moving the moving base 16 in the vertical direction.
在基座4的上表面上形成有凹部4a，在该凹部4a内配置有卡盘工作台机构36。卡盘工作台机构36具有卡盘工作台38，通过未图示的移动机构在晶片装卸位置A和与磨削单元10对置的磨削位置B之间沿Y轴方向移动。40、42是波纹部。在基座4的前方侧配设有供磨削装置2的操作者输入磨削条件等的操作面板44。A recessed portion 4a is formed on the upper surface of the base 4, and a chuck table mechanism 36 is arranged in the recessed portion 4a. The chuck table mechanism 36 has a chuck table 38 that moves in the Y-axis direction between the wafer loading and unloading position A and the grinding position B facing the grinding unit 10 by a moving mechanism (not shown). 40 and 42 are corrugated parts. An operation panel 44 for the operator of the grinding device 2 to input grinding conditions and the like is provided on the front side of the base 4 .
参照图2，示出了使用在正面未形成LSI等器件的调试级硅晶片11作为被加工物而通过本发明的方法实施磨削磨具28的修锐方法的情况的局部剖视侧视图。Referring to FIG. 2 , there is shown a partial cross-sectional side view of a case where a grinding tool 28 is sharpened by the method of the present invention using a debug-grade silicon wafer 11 with no LSI or other devices formed on the front surface as a workpiece.
卡盘工作台38利用保持面对调试级硅晶片11进行保持，以能够装卸的方式安装于磨轮安装座22的磨削磨轮24包含环状的磨轮基台26以及呈环状粘固于磨轮基台26的下端的多个磨削磨具28。磨削磨具28是将金刚石磨粒用树脂结合剂、陶瓷结合剂、金属结合剂等固定而形成的。The chuck workbench 38 uses a holding surface to hold the debug-grade silicon wafer 11. The grinding wheel 24 removably mounted on the grinding wheel mounting seat 22 includes an annular grinding wheel base 26 and an annular grinding wheel base 26 that is bonded to the grinding wheel base. A plurality of grinding tools 28 at the lower end of the table 26. The grinding wheel 28 is formed by fixing diamond abrasive grains with a resin bond, a ceramic bond, a metal bond, or the like.
主轴18绕相对于卡盘工作台38的保持面垂直的旋转轴旋转。磨削进给单元34将磨削单元10在主轴18的旋转轴方向上进行磨削进给。The spindle 18 rotates around a rotation axis perpendicular to the holding surface of the chuck table 38 . The grinding feed unit 34 grinds and feeds the grinding unit 10 in the direction of the rotation axis of the spindle 18 .
本发明的磨削磨具的修锐方法不使保持着调试级硅晶片11的卡盘工作台38旋转，而是一边使主轴18向箭头b方向例如按照6000rpm进行旋转一边利用磨削进给单元34将磨削单元10向箭头Z方向进行磨削进给，从而对卡盘工作台38所保持的调试级硅晶片11进行磨削。即，在本发明的磨削磨具的修锐方法中，其显著特征在于，在不使卡盘工作台38旋转的情况下实施磨削磨具28的修锐作业。The grinding tool sharpening method of the present invention does not rotate the chuck table 38 holding the debug-grade silicon wafer 11, but uses a grinding feed unit while rotating the spindle 18 in the direction of arrow b, for example, at 6000 rpm. 34. Grind and feed the grinding unit 10 in the direction of arrow Z to grind the debug-grade silicon wafer 11 held by the chuck table 38. That is, the method for sharpening a grinding wheel of the present invention is characterized in that the sharpening operation of the grinding wheel 28 is performed without rotating the chuck table 38 .
图3是示意性示出本发明的磨削磨具的修锐方法的俯视图。在本发明的磨削磨具的修锐方法中，不使卡盘工作台38旋转而仅使磨削磨轮24向箭头b方向旋转，对调试级硅晶片11进行磨削而进行磨削磨具28的修锐，因此在调试级硅晶片11上形成圆弧状的磨削槽13。FIG. 3 is a plan view schematically showing a method for sharpening a grinding tool according to the present invention. In the grinding tool sharpening method of the present invention, the chuck table 38 is not rotated and only the grinding wheel 24 is rotated in the direction of arrow b to grind the debug grade silicon wafer 11 and grind the grinding tool. 28 of sharpening, thus forming an arc-shaped grinding groove 13 on the debug-grade silicon wafer 11.
这样在不使调试级硅晶片11旋转的情况下进行磨削而进行磨削磨具28的修锐，因此施加给磨削磨具28的负荷较高，即使调试级硅晶片11的磨削体积较小，也能够得到较高的修锐效果。因此，能够减少在磨削磨具28的修锐作业中所使用的调试级硅晶片11的张数。In this way, grinding is performed without rotating the debugging grade silicon wafer 11 and the grinding tool 28 is sharpened. Therefore, the load applied to the grinding tool 28 is relatively high, even if the grinding volume of the debugging grade silicon wafer 11 is Smaller, higher sharpening effect can be obtained. Therefore, the number of commissioning grade silicon wafers 11 used in the sharpening operation of the grinding wheel 28 can be reduced.
图4的(A)是实施磨削磨具28的修锐作业而形成了一条圆弧状的磨削槽13之后的调试级硅晶片11的俯视图。这样，在磨削磨具28的一次修锐作业中，仅形成一条圆弧状的磨削槽13，因此使保持着调试级硅晶片11的卡盘工作台38在圆周方向上略微旋转便能够多次实施磨削磨具28的修锐作业。FIG. 4(A) is a top view of the debug-grade silicon wafer 11 after the grinding tool 28 has been sharpened to form an arc-shaped grinding groove 13 . In this way, in one sharpening operation of the grinding tool 28, only one arc-shaped grinding groove 13 is formed, so the chuck table 38 holding the debug grade silicon wafer 11 can be slightly rotated in the circumferential direction. The grinding tool 28 is sharpened multiple times.
即，能够根据磨削磨具28的修锐情况而在一张调试级硅晶片11上如图4的(B)所示那样形成多条圆弧状的磨削槽13，因此不增加调试级硅晶片11的使用量便能够调整修锐磨削量。图4的(B)是在一张调试级硅晶片11上形成了多条圆弧状的磨削槽13之后的调试级硅晶片11的俯视图。That is, a plurality of arc-shaped grinding grooves 13 can be formed on one debugging grade silicon wafer 11 according to the sharpening condition of the grinding wheel 28 as shown in FIG. The amount of sharpening grinding can be adjusted by the amount of silicon wafer 11 used. FIG. 4(B) is a top view of the debug-grade silicon wafer 11 after a plurality of arc-shaped grinding grooves 13 are formed on the debug-grade silicon wafer 11 .
在本发明的磨削磨具的修锐方法中使用的调试级硅晶片11形成有一条至多条圆弧状的磨削槽13，正面变得凹凸不平。因此，磨削磨具一边高速地与正面的凹凸碰撞一边实施磨削，因此与对平坦的调试级硅晶片11进行磨削相比，磨削负荷较高，因此也能够作为一边使卡盘工作台38和磨削磨轮24一起旋转一边实施磨削磨具28的修锐的现有的修锐方法的修锐用晶片来使用。The debugging grade silicon wafer 11 used in the grinding tool sharpening method of the present invention is formed with one or more arc-shaped grinding grooves 13, and the front surface becomes uneven. Therefore, the grinding tool performs grinding while colliding with the concavities and convexities on the front surface at high speed. Therefore, compared with grinding the flat debug-grade silicon wafer 11, the grinding load is higher, so it can also be used as a chuck to operate. The conventional dressing method in which the table 38 rotates together with the grinding wheel 24 and the grinding wheel 28 is sharpened uses a dressing wafer.
参照图5，示出了使用形成有多条圆弧状的磨削槽13的调试级硅晶片1来实施现有方法的修锐作业的情况的局部剖视侧视图。Referring to FIG. 5 , there is shown a partial cross-sectional side view of a case where a conventional sharpening operation is performed using a commissioning-grade silicon wafer 1 formed with a plurality of arc-shaped grinding grooves 13 .
在该现有的修锐方法中，一边使对形成有多条圆弧状的磨削槽13的调试级硅晶片11进行吸引保持的卡盘工作台38向箭头a方向按照例如300rpm进行旋转，并且使磨削磨轮24向箭头b方向按照例如6000rpm进行旋转，一边利用磨削进给单元34将磨削磨轮34在箭头Z方向上进行磨削进给，从而实施调试级硅晶片11的磨削。In this conventional sharpening method, the chuck table 38 that attracts and holds the debug-grade silicon wafer 11 formed with a plurality of arc-shaped grinding grooves 13 is rotated in the direction of arrow a at, for example, 300 rpm. Then, the grinding wheel 24 is rotated in the direction of arrow b at, for example, 6000 rpm, and the grinding feed unit 34 is used to grind and feed the grinding wheel 34 in the direction of arrow Z, thereby grinding the debug grade silicon wafer 11 .
在调试级硅晶片11上形成有多条圆弧状的磨削槽13，因此与平坦的晶片相比，磨削负荷较高，因此能够有效地实施磨削磨具28的修锐作业。另外，由于磨削负荷较高，因此磨具的消耗也较多，利用这一点，除了修锐以外，在通常对含有磨粒的修整板进行磨削而实施的修整中，也能够代替修整板而利用形成有多条圆弧状的磨削槽13的调试级硅晶片1。A plurality of arc-shaped grinding grooves 13 are formed on the debug-grade silicon wafer 11. Therefore, compared with a flat wafer, the grinding load is higher, so the grinding grinding tool 28 can be effectively sharpened. In addition, since the grinding load is high, the consumption of abrasive tools is also high. Taking advantage of this, in addition to sharpening, the dresser plate can also be used instead of the dresser plate in the dressing that is usually performed by grinding the dresser plate containing abrasive particles. A debug-grade silicon wafer 1 formed with a plurality of arc-shaped grinding grooves 13 is used.
另外，在上述的实施方式中，对使用硅晶片作为利用磨削装置2进行磨削的被加工物的情况进行了说明，因此在磨削磨具28的修锐作业中采用了调试级硅晶片，但在作为磨削对象的被加工物由其他材质构成的情况下，优选使用与磨削对象的被加工物相同材质的被加工物作为修锐用晶片。In addition, in the above-mentioned embodiment, the case where a silicon wafer is used as the workpiece to be ground by the grinding device 2 has been described. Therefore, a commissioning grade silicon wafer is used for the sharpening operation of the grinding tool 28 . , however, when the workpiece to be ground is made of another material, it is preferable to use a workpiece of the same material as the workpiece to be ground as the sharpening wafer.
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