CN110627122A - Preparation of VO by solid phase method2Method for phase change materials - Google Patents
Preparation of VO by solid phase method2Method for phase change materials Download PDFInfo
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- CN110627122A CN110627122A CN201911017691.5A CN201911017691A CN110627122A CN 110627122 A CN110627122 A CN 110627122A CN 201911017691 A CN201911017691 A CN 201911017691A CN 110627122 A CN110627122 A CN 110627122A
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- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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Abstract
The invention discloses a solid phase method for preparing VO2A method for preparing a phase-change material belongs to the technical field of vanadium dioxide preparation, and comprises the following steps: will V2O5、V2O3Mixing with sulfuric acid, and reacting under the protection of argon to obtain VOSO4Then the VOSO is added4Decomposing to obtain VO2. The invention uses V2O5And V2O3Preparation of VO as starting Material2The method has the advantages of simple raw materials, low requirement on equipment, simple process flow, low cost and easy industrial production. VO prepared by the invention2High purity, good crystallinity, low phase transition temperature (lower than 68 ℃), and can be widely applied to the fields of intelligent windows, photoelectric switches, thermistors and the like.
Description
Technical Field
The invention belongs to the technical field of vanadium dioxide preparation, and particularly relates to a method for preparing VO by a solid phase method2A method of phase change materials.
Background
Vanadium dioxide (VO)2) Is a phase-change material, has the characteristic of changing from a monoclinic semiconductor phase to a tetragonal metal phase at the temperature of 68 ℃, and has the optical property and the electric propertyThe chemical properties are mutated. The material can be widely applied to the fields of intelligent windows, laser radiation resistance, photoelectric switches, antistatic coatings and the like.
At present, VO is prepared2The method of the material mainly comprises the following steps: hydrothermal method, chemical precipitation method, thermal decomposition method, sol-gel method, vapor deposition method, sputtering method, and the like. Wherein, the sol-gel method, the vapor deposition method and the sputtering method are mainly used for preparing VO2A film. The hydrothermal method, chemical precipitation method and thermal decomposition method are mainly used for preparing VO2And (3) powder.
Although the hydrothermal method can directly synthesize VO2But has the defects of low yield, small yield, high requirements on equipment and environment and the like. For example, CN102616849A discloses a method for directly synthesizing M-phase vanadium dioxide nanoparticles by a liquid phase method: one or a mixture of two of vanadium pentoxide and metavanadate is used as a raw material, a reducing agent is slowly dripped into the raw material, a precursor is obtained through constant-temperature reaction, the precursor is mixed with distilled water and then transferred into a reaction steel kettle with a polytetrafluoroethylene lining, and a bluish-black M-phase vanadium dioxide nano-particle product is obtained through hydrothermal reaction. CN108373171A discloses a method for preparing vanadium dioxide by a hydrothermal method, which comprises the following steps: dissolving vanadyl sulfate powder in water to prepare a solution to be reacted with the vanadium concentration of 10-30 g/L, and reacting the obtained solution to be reacted at the temperature of 180-250 ℃ for 6-15 hours to obtain vanadium dioxide slurry; and carrying out solid-liquid separation and vacuum drying to obtain vanadium dioxide. CN107117654A discloses a method for preparing vanadium dioxide from vanadium-containing solution: putting a catalyst (one of palladium chloride, palladium and platinum) and a vanadium-containing solution into a reaction kettle, reacting for 0.5-4 h under the condition of a hydrogen atmosphere and 100-250 ℃, carrying out solid-liquid separation to obtain a tetravalent vanadium oxide filter cake and filtrate, then carrying out vacuum drying on the tetravalent vanadium oxide filter cake, and calcining for 0.5-2 h under the condition of 300-500 ℃ and an inert atmosphere to obtain vanadium dioxide.
The chemical precipitation method generally can not obtain crystalline products, and heat treatment is needed subsequently, so that the defects of complex process flow, high cost and the like exist. For example, CN102795668A discloses a VO2The preparation method comprises the following steps: preparing ammonium metavanadate/ammonium vanadate into waterAdding a reducing agent and an accelerant into the solution, wherein the reducing agent comprises glucose, fructose, lactose, formaldehyde, ethylene glycol and the like, the accelerant comprises ammonium carbonate, ammonium chloride, ammonium bicarbonate, ammonium sulfate and the like, reacting at the temperature of 50-100 ℃ to obtain an ammonium trivanadate purple precipitate, putting an ammonium trivanadate precursor into a vacuum or inert gas environment, and preserving heat at the temperature of 400-900 ℃ for 5-300 min to prepare VO2And (3) powder.
Preparation of VO by thermal decomposition2The raw materials used by the powder are usually ammonium metavanadate and vanadium pentoxide, the temperature required by thermal decomposition is over 1000 ℃, the energy consumption is very high, and the method is not suitable for industrial production.
Disclosure of Invention
The invention aims to provide a solid phase method for preparing VO, which is beneficial to industrial application2A method of phase change material comprising the steps of:
will V2O5、V2O3Mixing with sulfuric acid, and reacting under the protection of argon to obtain VOSO4Then the VOSO is added4Decomposing to obtain VO2。
Wherein, the solid phase method is used for preparing VO2Method of phase change material, said V2O5And V2O3The molar ratio of (A) is 1.0-1.2: 1; preferably 1: 1.
wherein, the solid phase method is used for preparing VO2Method for preparing phase change material, the molar ratio of the sulfuric acid to the total vanadium in the raw material is n (H)2SO4): n (TV) 1.2 to 2.0: 1; preferably 1.2: 1.
wherein, the solid phase method is used for preparing VO2The method of the phase-change material comprises the step of mixing 50-98% of sulfuric acid by mass.
Wherein, the solid phase method is used for preparing VO2Method for producing a VOSO4The reaction temperature is 80-200 ℃, and the reaction time is 1-2.5 h; preferably, the generation of VOSO4The reaction temperature of (2) was 140 ℃.
Wherein, the solid phase method is used for preparing VO2Method of phase change material, said VOSO4Has a decomposition temperature ofDecomposing for 3-6 h at 600-700 ℃; preferably, the VOSO4The decomposition temperature of (A) was 600 ℃.
The invention has the beneficial effects that:
the invention uses V2O5And V2O3Preparation of VO as starting Material2The method has the advantages of simple raw materials, low requirement on equipment, simple process flow, low cost and easy industrial production. VO prepared by the invention2High purity, good crystallinity, low phase transition temperature (lower than 68 ℃), and can be widely applied to the fields of intelligent windows, photoelectric switches, thermistors and the like.
Drawings
FIG. 1 shows M-phase VO obtained in example 2 of the present invention2Differential thermal profile of the powder;
FIG. 2 shows M-phase VO obtained in example 2 of the present invention2X-ray diffraction pattern of the powder.
Detailed Description
In particular to a solid phase method for preparing VO2A method of phase change material comprising the steps of: will V2O5、V2O3Mixing with sulfuric acid, and reacting under the protection of argon to obtain VOSO4Then the VOSO is added4Decomposing to obtain VO2。
The reactions that occur in the present invention are as follows:
V2O5+V2O3+4H2SO4=4VOSO4+4H2O
2VOSO4=2VO2+2SO3
since nitrogen reacts with vanadium, the process of the invention can only be carried out under argon protection or in a vacuum atmosphere.
In the method of the present invention, said V2O5And V2O3Too high or too low of the molar ratio of (A) can cause vanadium oxide inclusion in the product and influence VO2Phase change performance. Therefore, the invention will V2O5And V2O3The molar ratio of (A) to (B) is set to 1.0-1.2: 1; preferably 1: 1.
in the method of the invention, if the dosage of the sulfuric acid is too low, the reaction is not completely carried out; if the dosage of the sulfuric acid is too high, the energy consumption is increased, and the method has no practical significance. Thus, the present invention sets the molar ratio of sulfuric acid to total vanadium in the feedstock to n (H)2SO4): n (TV) 1.2 to 2.0: 1; preferably 1.2: 1.
in the process of the invention, VOSO is generated4Temperature and decomposition of VOSO4If the temperature of (a) is too low, the reaction cannot occur, and if the temperature is too high, the energy consumption is increased, which is of no practical significance. Therefore, the present invention will generate VOSO4The reaction temperature is set to be 80-200 ℃, and the reaction time is 1-2.5 h; preferably, the generation of VOSO4The reaction temperature of (2) is 140 ℃; VOSO4The decomposition temperature is 600-700 ℃, and the decomposition time is 3-6 h; preferably, the VOSO4The decomposition temperature of (A) was 600 ℃.
Since the application uses pure V2O5And V2O3Does not involve other impurities, therefore, the M-phase VO prepared by the invention2The purity of the product is more than 95 percent, and no other phase state exists.
The following examples are provided to further illustrate the embodiments of the present invention and are not intended to limit the scope of the present invention.
Example 1
Weighing 50g of vanadium pentoxide and 41.21g of vanadium trioxide, placing the vanadium pentoxide and the vanadium trioxide into a corundum crucible, adding 71.67ml of sulfuric acid with the mass fraction of 98%, uniformly mixing and stirring the vanadium pentoxide and the vanadium trioxide, placing the mixture into an atmosphere furnace, slowly introducing argon, keeping the temperature for 2.5 hours after the temperature of the atmosphere furnace is raised to 80 ℃, continuing to raise the temperature to 600 ℃ after the first-stage heat preservation is finished, and keeping the temperature for 6 hours. Stopping heating, continuously introducing argon to the atmosphere furnace, cooling to room temperature, taking out a sample to obtain VO2(M), wherein the M phase product purity is greater than 95%.
Example 2
50g of vanadium pentoxide and 37.46g of vanadium trioxide are weighed and placed in a corundum crucible, 114ml of sulfuric acid with the mass fraction of 98% is added into the corundum crucible, and the three are mixed and stirredAnd after the mixture is uniform, placing the mixture in an atmosphere furnace, slowly introducing argon, keeping the temperature for 1h after the temperature of the atmosphere furnace is raised to 200 ℃, continuing to raise the temperature to 700 ℃ after the first-stage heat preservation is finished, and keeping the temperature for 3 h. Stopping heating, continuously introducing argon to the atmosphere furnace, cooling to room temperature, taking out a sample to obtain VO2(M) a differential thermal profile of fig. 1, an X-ray diffraction pattern of fig. 2; the purity of the M phase product in this example was greater than 95%.
Example 3
Weighing 50g of vanadium pentoxide and 34.34g of vanadium trioxide, placing the vanadium pentoxide and the vanadium trioxide into a corundum crucible, adding 87.59ml of sulfuric acid with the mass fraction of 98%, uniformly mixing and stirring the vanadium pentoxide and the vanadium trioxide, placing the mixture into an atmosphere furnace, slowly introducing argon, keeping the temperature for 1.8h after the temperature of the atmosphere furnace is raised to 150 ℃, continuing to raise the temperature to 650 ℃ after the first-stage heat preservation is finished, and keeping the temperature for 4 h. Stopping heating, continuously introducing argon to the atmosphere furnace, cooling to room temperature, taking out a sample to obtain VO2(M), wherein the M phase product purity is greater than 95%.
Claims (6)
1. Preparation of VO by solid phase method2A method of phase change material, comprising the steps of:
will V2O5、V2O3Mixing with sulfuric acid, and reacting under the protection of argon to obtain VOSO4Then the VOSO is added4Decomposing to obtain VO2。
2. VO preparation by solid phase method according to claim 12A method of phase change materials, characterized by: the V is2O5And V2O3The molar ratio of (A) is 1.0-1.2: 1; preferably 1: 1.
3. preparation of VO by solid phase method according to claim 1 or 22A method of phase change materials, characterized by: the molar ratio of the sulfuric acid to the total vanadium in the raw material is n (H)2SO4): n (TV) 1.2 to 2.0: 1; preferably 1.2: 1.
4. the solid phase method according to any one of claims 1 to 3Preparation of VO2A method of phase change materials, characterized by: the mass fraction of the sulfuric acid is 50-98%.
5. VO prepared by the solid phase method according to any one of claims 1 to 42A method of phase change materials, characterized by: said generating VOSO4The reaction temperature is 80-200 ℃, and the reaction time is 1-2.5 h; preferably, the generation of VOSO4The reaction temperature of (2) was 140 ℃.
6. VO prepared by the solid phase method according to any one of claims 1 to 52A method of phase change materials, characterized by: the VOSO4The decomposition temperature is 600-700 ℃, and the decomposition time is 3-6 h; preferably, the VOSO4The decomposition temperature of (A) was 600 ℃.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112125338A (en) * | 2020-10-16 | 2020-12-25 | 成都先进金属材料产业技术研究院有限公司 | Method for preparing M-phase vanadium dioxide by solvothermal method |
CN112174207A (en) * | 2020-10-16 | 2021-01-05 | 成都先进金属材料产业技术研究院有限公司 | Method for directly preparing M-phase vanadium dioxide nano powder by ultrasonic spray pyrolysis |
CN112174206A (en) * | 2020-10-16 | 2021-01-05 | 成都先进金属材料产业技术研究院有限公司 | Method for directly preparing vanadium dioxide by taking vanadyl acetylacetonate as vanadium source |
CN112209443A (en) * | 2020-10-16 | 2021-01-12 | 成都先进金属材料产业技术研究院有限公司 | Method for preparing M-phase vanadium dioxide by single ultrasonic atomization microwave method |
CN112209440A (en) * | 2020-10-16 | 2021-01-12 | 成都先进金属材料产业技术研究院有限公司 | Process for preparing M-phase vanadium dioxide nano powder |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112125338A (en) * | 2020-10-16 | 2020-12-25 | 成都先进金属材料产业技术研究院有限公司 | Method for preparing M-phase vanadium dioxide by solvothermal method |
CN112174207A (en) * | 2020-10-16 | 2021-01-05 | 成都先进金属材料产业技术研究院有限公司 | Method for directly preparing M-phase vanadium dioxide nano powder by ultrasonic spray pyrolysis |
CN112174206A (en) * | 2020-10-16 | 2021-01-05 | 成都先进金属材料产业技术研究院有限公司 | Method for directly preparing vanadium dioxide by taking vanadyl acetylacetonate as vanadium source |
CN112209443A (en) * | 2020-10-16 | 2021-01-12 | 成都先进金属材料产业技术研究院有限公司 | Method for preparing M-phase vanadium dioxide by single ultrasonic atomization microwave method |
CN112209440A (en) * | 2020-10-16 | 2021-01-12 | 成都先进金属材料产业技术研究院有限公司 | Process for preparing M-phase vanadium dioxide nano powder |
CN112174207B (en) * | 2020-10-16 | 2022-05-24 | 成都先进金属材料产业技术研究院有限公司 | Method for directly preparing M-phase vanadium dioxide nano powder by ultrasonic spray pyrolysis |
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Application publication date: 20191231 |