CN110610849A - A kind of InGaN semiconductor material and its epitaxial preparation method and application - Google Patents

Abstract

The invention discloses an InGaN semiconductor material and its epitaxial preparation method and application. The InGaN semiconductor material includes an InGaN epitaxial layer, and the InGaN epitaxial layer is prepared by a Ga migration enhanced epitaxial method. Periodic modulation for growth, in a single growth cycle of the InGaN epitaxial layer, the N source and the In source used are simultaneously fed or interrupted to the reaction chamber, and the Ga source is fed when the N source and the In source are interrupted and/or fed at the same time . Compared with the prior art, its beneficial effects are: the InGaN semiconductor material provided by the present invention has the advantages of low defect density, high crystal quality, uniform distribution of In components and good optical properties; the epitaxial preparation method provided is Ga migration In the enhanced epitaxy method, the access timing can effectively enhance the migration of Ga atoms on the growth surface, reduce the competition between the In source and the Ga source for lattice incorporation, and improve the utilization of the Ga source; the InGaN semiconductor material prepared by this method has a wide range of properties. application prospects.

Description

A kind of InGaN semiconductor material and its epitaxial preparation method and application

technical field

The present invention relates to the technical field of semiconductor materials, and more specifically, relates to an InGaN semiconductor material and its epitaxial preparation method and application.

Background technique

InGaN semiconductor material has the advantages of direct band gap, continuously adjustable emission wavelength from near-ultraviolet to near-infrared, large optical absorption coefficient, and high theoretical electron mobility. It has important applications in the field of optoelectronics and electronic devices. In particular, InGaN materials based on the InGaN/GaN multi-quantum well structure have achieved great success in visible light-emitting devices. Lighting projects based on light-emitting diodes (LEDs) have formed an industrial chain and brought significant changes to people's lives. , fully demonstrating the obvious advantages of this material as well as its future development potential.

However, there are still serious defects in the InGaN semiconductor materials currently prepared, especially for InGaN films with an In composition higher than 10%, the defects in the layer increase with the increase of the In composition, which seriously affects the optical properties of the InGaN film. , Electrical characteristics. First of all, InGaN thin film materials are usually grown on the GaN epitaxial layer by epitaxy method. As the In composition increases, the lattice mismatch and thermal mismatch between the InGaN layer and the buffer layer increase, and the criticality of the InGaN thin film As the thickness decreases, the grown InGaN epitaxial film often has a high density of mismatch defects; secondly, due to the high saturation vapor pressure of In atoms, in order to increase the incorporation of In, the InGaN material needs to be grown at a lower temperature. The low growth temperature makes the migration ability of Ga atoms insufficient, which leads to the generation of defects such as stacking faults, trench defects (trench defects) and V-shaped pits (V-pits), and low temperature growth is also easy to introduce impurity defects; finally However, In atoms still have a relatively high mobility at low growth temperatures, and they tend to gather at defects such as stacking faults, trench defects, and V-shaped pits to form In-rich regions, resulting in uneven distribution of In components. At the same time, the local state introduced by the In-rich region further deteriorates the structural properties, optical properties and electrical properties of the material.

Stacking faults and related defects (including stacking faults, partial dislocations, stacking mismatch boundaries, trench defects, etc.) are the degradation factors that cannot be ignored for the quality of InGaN materials. For such defects, the current research community only proposes two solutions, and the objects of the solutions are all focused on the InGaN/GaN quantum well structure. Among them, one is to increase the growth temperature of GaN during the growth of the GaN barrier layer, and the other is to switch the carrier gas of the growth source from nitrogen to hydrogen during the growth of the GaN barrier layer. Both methods can effectively suppress the stacking faults and related defects generated in the GaN barrier layer. However, the stacking faults and related defects generated in the potential well layer InGaN and single InGaN thin film materials in the quantum well structure have rarely been studied to provide relevant technical solutions.

Contents of the invention

An object of the present invention is to overcome at least one defect (deficiency) of the above-mentioned prior art, and provide an InGaN semiconductor material, which has the advantages of low defect density, high crystal quality, uniform distribution of In components and good optical properties .

Another object of the present invention is to provide the epitaxial preparation method of the InGaN semiconductor material. Using the epitaxial preparation method, the stacking faults and related defects of the InGaN material can be effectively reduced, and the fluctuation of the In composition can be suppressed, thereby effectively improving the InGaN The structural and optical properties of semiconductor materials can also improve the utilization of Ga sources.

The technical scheme that the present invention takes is:

An InGaN semiconductor material, comprising an InGaN epitaxial layer, the InGaN epitaxial layer is composed of several growth cycles, and the InGaN epitaxial layer is prepared by a Ga migration enhanced epitaxy method, and is grown by periodically modulating the growth source input during preparation In a single growth cycle of the InGaN epitaxial layer, the N source and the In source used are simultaneously fed or interrupted to the reaction chamber, and the Ga source is fed when the N source and the In source are simultaneously interrupted and/or fed.

The present invention adopts the Ga migration enhanced epitaxy method to prepare the InGaN epitaxial layer. In the single growth cycle of the InGaN epitaxial layer, the Ga source is connected or kept connected when the N source and the In source are turned off at the same time. From the perspective of the growth mechanism, it has the following advantages : (1) This growth method can effectively increase the migration length of Ga atoms and hinder the generation of stacking faults and related defects. On the one hand, since the Ga source is not accompanied by the N source, the bonding probability of the Ga atoms adsorbed on the surface and the N atoms is small, so that the Ga atoms adsorbed on the growth interface have a longer migration time to move to a lower energy (i.e. more stable) lattice point position; on the other hand, rationally controlling the flow rate of the Ga source and the access time can make the growth surface form a metal biatomic layer structure, reduce the diffusion barrier, and further increase the migration length of Ga atoms on the surface . (2) For the stacking faults and related defects that have been generated, this growth source access method can increase the probability of eliminating related defects. The process of feeding the Ga source is accompanied by the decomposition of the InGaN material, and stacking faults and related defects are more likely to be dissociated as unstable structures during this process. (3) This growth source access method enhances the migration of Ga adatoms located on the growth interface without enhancing the migration of In atoms, thereby avoiding the aggravation of In atom segregation to stacking faults and related defects and V-pits Inhomogeneous distribution of In components is caused by the vicinity of such defects. In addition, the reduced stacking faults and related defects also lead to a more uniform distribution of In components. (4) The In source and the Ga source both belong to the Group III metal source, and the two are separately connected to the growth chamber, which can also alleviate the competition relationship with the N atom for bonding, and improve the utilization rate of the Ga source.

In summary, the InGaN epitaxial layer prepared by the Ga migration-enhanced epitaxy method provided in the present invention can reduce stacking faults and related defects of InGaN materials from many aspects, and suppress In composition fluctuations, thereby effectively improving the Photoelectric properties and structural properties, while also improving the utilization of Ga sources. The InGaN semiconductor material provided by the invention has the advantages of less stacking faults and related defects, uniform distribution of In components, high crystal quality and good optical properties.

Further, the InGaN semiconductor material includes an underlying material located under the InGaN epitaxial layer, and the underlying material may be a substrate or template composed of sapphire, silicon, silicon carbide, gallium nitride, aluminum nitride or zinc oxide, or be On the substrate or template composed of sapphire, silicon, silicon carbide, gallium nitride, aluminum nitride or zinc oxide, a superlattice or component composed of gallium nitride, aluminum nitride or III-V compound semiconductor materials is further grown Gradient transition layer or buffer layer. The InGaN semiconductor material provided by the present invention has no requirement on the underlying material used for growing the InGaN epitaxial layer, and has universal applicability.

Further, the coverage range of the In composition x of the InGaN epitaxial layer is 0<x<100%. The In composition of the InGaN semiconductor material provided by the present invention can cover a wide range, and the InGaN material with any In composition x in the range of 0-100% can be prepared by the Ga migration enhanced epitaxy method provided by the present invention.

Further, the In composition of the InGaN epitaxial layer is controlled by adjusting the flows of the Ga source, the In source and the N source or the opening and closing time of the Ga source, the In source and the N source in a single cycle. Specifically, the In composition can be increased by increasing the flow of the In source and the N source and decreasing the flow of the Ga source; it is also possible to reduce the flow of the Ga source by increasing the flow time of the In source and the N source. Into the time, to increase the In composition.

Further, the total thickness of the InGaN epitaxial layer is 0.5 nm-2 μm, and the thickness of a single period is 0.5-6 nm. The InGaN epitaxial layer is composed of several growth periods, the total thickness of the InGaN epitaxial layer is any thickness in the range of 0.5nm-2μm, and the thickness of a single period is any thickness in the range of 0.5-6nm.

Further, the conductivity type of the InGaN semiconductor material is unintentional doping, acceptor compensation intrinsic type, n-type doping or p-type doping. Specifically, the InGaN semiconductor material prepared by the Ga migration enhanced epitaxy method is an unintentional doping type when no doping source is introduced; the InGaN semiconductor prepared when a small amount of acceptor doping sources such as magnesium, zinc, and carbon is introduced The material is the intrinsic type of acceptor compensation; when silicon, oxygen, carbon and other donor doping sources are introduced, the InGaN semiconductor material prepared is n-type doping type; when more acceptor doping sources such as magnesium, zinc and carbon are introduced The InGaN semiconductor material prepared when the impurity source is used is a p-type doping type.

Another object of the present invention is to provide a method for epitaxial preparation of InGaN semiconductor materials. In a single cycle, the N source and the In source used for the growth of the InGaN epitaxial layer are simultaneously connected or interrupted, and the timing of the Ga source is provided in the following two ways:

(1) When the N source and the In source are connected at the same time, the Ga source is not connected, and InN is grown for a period of time, and then the Ga source is connected when the N source and the In source are interrupted at the same time to form InGaN. These two parts constitute a growth cycle;

(2) The Ga source is connected together with the N source and the In source, and then the N source and the In source are interrupted at the same time. During the InGaN growth process, the Ga source is never interrupted, and the N source and the In source are simultaneously connected and interrupted to form a livespan.

The epitaxial preparation method of an InGaN semiconductor material provided by the present invention can suppress or even eliminate the factors inherent in the material itself that cause the above-mentioned material problems. It does not make any requirements for the underlying substrate, template or buffer layer. Any form of substrate, Both the template and the buffer layer can use this Ga migration enhanced epitaxy method to improve the quality of the InGaN semiconductor material. This method is universal and has a wide range of applications.

Further, the growth method of the InGaN epitaxial layer is metal-organic chemical vapor deposition or molecular beam epitaxy. It should be noted that the preparation method of the InGaN epitaxial layer can be metal-organic chemical vapor deposition or molecular beam epitaxy, but it is not limited to this method, as long as the Ga migration-enhanced epitaxy method provided in the present invention can be used. Methods for preparing InGaN epitaxial layers are all within the protection scope of the present invention.

The third object of the present invention is to apply the InGaN semiconductor material prepared by the above epitaxial preparation method to optoelectronic devices. Because InGaN semiconductor materials are widely used and can be used to make various types of devices, in all applications, InGaN semiconductor materials that are prepared by the Ga migration enhanced epitaxy method provided by the present invention fall within the protection scope of this patent. In actual use, the semiconductor materials prepared by the above method can be made into various types of devices, such as PIN structure optoelectronic devices or GaN/InGaN multiple quantum well structures. One purpose of the present invention is also to protect the InGaN prepared by this method. Semiconductor materials are used in optoelectronic devices.

Compared with prior art, the beneficial effect of the present invention is:

The InGaN semiconductor material and its epitaxial preparation method described in the present invention adopt the Ga migration enhanced epitaxy method to prepare the InGaN semiconductor material, which can not only suppress stacking faults and related defects from many aspects, and suppress In composition fluctuations, thereby improving the InGaN semiconductor The structural properties and optical properties of the material can also improve the utilization rate of the Ga source; moreover, this method is not only applicable to the quantum well structure, but also applicable to InGaN materials with various thicknesses and various In compositions, and it is also suitable for the underlying substrate, There is no requirement on the template or the buffer layer, and the scope of application is wide; in addition, the InGaN semiconductor material prepared by the epitaxial method has low defect density, high crystal quality, uniform distribution of In components, and good optical properties.

Description of drawings

FIG. 1 is a schematic diagram of the structure of an InGaN semiconductor material in Embodiment 1 of the present invention.

FIG. 2 is a schematic timing diagram of the Ga migration-enhanced epitaxy method used in Embodiment 1 of the present invention.

Figure 3 is a comparison of the surface morphology of the InGaN film prepared in Example 1 of the present invention and the InGaN film grown by a traditional continuous method, and the HAADF-STEM test results of groove defects, wherein Figure 3(a) is prepared in Example 1 Figure 3(b) is the surface topography of the traditional continuous growth InGaN film, and Figure 3(c) is the HAADF-STEM result of trench defects in the continuous growth InGaN film.

FIG. 4 is a schematic diagram of the structure of the InGaN semiconductor material in Embodiment 2 of the present invention.

FIG. 5 is a schematic timing diagram of using the Ga migration enhanced epitaxy method in Embodiment 2 of the present invention.

FIG. 6 is a schematic diagram of InGaN material grown by the Ga migration enhanced epitaxy method in Example 4 of the present invention for making a PIN structure optoelectronic device.

7 is a schematic diagram of the InGaN material grown by the Ga migration-enhanced epitaxy method in Example 5 of the present invention for making a GaN/InGaN multi-quantum well structure optoelectronic device;

Detailed ways

The accompanying drawings of the present invention are only for illustrative purposes, and should not be construed as limiting the present invention. In order to better illustrate the following embodiments, some components in the drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, some known structures and their descriptions in the drawings may be omitted. understandable.

Example 1

As shown in FIG. 1 , this embodiment provides an InGaN semiconductor material, including a substrate 201 , and a nucleation layer 202 , a buffer layer 203 , and an InGaN epitaxial layer 204 grown on the substrate 201 from bottom to top. The InGaN epitaxial layer 204 is prepared by a Ga migration-enhanced epitaxy method, and the In source, N source and Ga source are respectively fed into the time sequence shown in FIG. 2 , that is, a single cycle consists of the following two processes in no particular order:

(1) The In source and the N source are connected at the same time, the Ga source is interrupted, and InN is grown;

(2) Simultaneously interrupt the In source and the N source, and connect the Ga source, so that Ga can be incorporated into the crystal lattice to form InGaN;

Further, the In component content of the InGaN epitaxial layer 204 is 14%.

Further, the thickness of a single period of the InGaN epitaxial layer 204 is 0.7 nm.

Further, the number of periods of the InGaN epitaxial layer 204 is 200, and the total thickness is 140 nm.

Further, the conductivity type of the InGaN epitaxial layer 204 is unintentionally doped.

Further, the substrate 201 is a c-plane sapphire substrate.

Further, the nucleation layer 202 is a low temperature GaN nucleation layer with a thickness of 30nm and a growth temperature of 536°C.

Further, the buffer layer 203 is a high-temperature GaN buffer layer with a thickness of 3 μm and a growth temperature of 1069° C.

The epitaxial preparation process of the InGaN semiconductor material comprises the following steps:

Step 1: select c-plane sapphire as the material of the substrate 201, place it in an H ₂ environment and etch it for 5 minutes, and nitride it in an NH ₃ environment after the etching is completed;

Step 2: epitaxially growing a low-temperature GaN nucleation layer 202 on the substrate 201 with a thickness of 30 nm;

Step 3: Epitaxial high-temperature GaN buffer layer 203 on the low-temperature GaN nucleation layer 202, the thickness of which is 3 μm;

Step 4: On the high-temperature GaN buffer layer 203, a Ga migration-enhanced epitaxy method is adopted, specifically, the InGaN epitaxial layer 204 is prepared using the sequence shown in FIG. 2 . In addition to the Ga source, In source and N source being connected or interrupted during the preparation process, other epitaxial parameters can be kept unchanged. First turn off the Ga source, and feed the In source and the N source at the same time, and grow InN for a period of time; then, turn off the In source and the N source at the same time, feed the Ga source, and form the target In composition of 14 by controlling the length of the feed time. % InGaN film. These two parts constitute a growth cycle, which can be repeated 200 times to prepare an InGaN epitaxial layer 204 with a thickness of 140 nm and an In composition of 14%.

Further, the epitaxial growth method of the InGaN epitaxial layer 204 is a metal-organic chemical vapor deposition method.

As shown in Figure 3, the surface morphology of the InGaN epitaxial layer prepared by the Ga migration-enhanced epitaxy method provided in this example and the HAADF-STEM test results are given. For the convenience of comparison, the surface morphology of the traditional continuous growth InGaN sample are also shown in the figure. HAADF-STEM results show that there are stacking faults under the trench defects; the surface morphology changes of the two samples prove that the Ga migration enhanced epitaxy method can effectively suppress the stacking faults and related defects of InGaN materials.

Example 2

As shown in FIG. 4, this embodiment provides an InGaN semiconductor material, including a substrate 401, and a nucleation layer 402, a buffer layer 403, a transition layer 404, and an InGaN epitaxial layer grown on the substrate 401 from bottom to top. 405. The InGaN epitaxial layer 405 is prepared by the Ga migration enhanced epitaxy method, and the In source, the N source, and the Ga source are respectively connected in the sequence shown in FIG. 5 , that is, a single cycle is composed of the following two processes in no particular order:

(1) Simultaneously feed In source, N source and Ga source;

(2) Interrupt the In source and the N source at the same time, and keep the Ga source connected.

Further, the In composition of the InGaN epitaxial layer 405 is 18%.

Further, the thickness of a single period of the InGaN epitaxial layer 405 is 1 nm.

Further, the number of periods of the InGaN epitaxial layer 405 is 150, and the total thickness is 150 nm.

Further, the conductivity type of the InGaN epitaxial layer 405 is unintentionally doped.

Further, the substrate 401 is a c-plane sapphire substrate.

Further, the nucleation layer 402 is a low temperature GaN nucleation layer with a thickness of 30nm and a growth temperature of 536°C.

Further, the buffer layer 403 is a high-temperature GaN buffer layer with a thickness of 2.5 μm and a growth temperature of 1069° C.

Further, the transition layer 404 may be an InGaN layer with a low In composition, an InGaN layer with a graded In composition, or a III-V compound superlattice layer. In this embodiment, an InGaN layer with a low In composition is selected, its thickness is 40 nm, and the In composition is 7%.

The epitaxial preparation of the InGaN semiconductor material comprises the following steps:

Step 1: select c-plane sapphire as the material of the substrate 401, place it in an _H2 environment for etching for 5 minutes, and nitride it in an _NH3 environment after the etching is completed;

Step 2: epitaxially growing a low-temperature GaN nucleation layer 402 on the substrate 401 with a thickness of 30 nm;

Step 3: Epitaxial high-temperature GaN buffer layer 403 on the low-temperature GaN nucleation layer 402, the thickness of which is 2.5 μm;

Step 4: growing a low-In composition InGaN transition layer 404 on the high-temperature GaN buffer layer 403, with an In composition of 7% and a thickness of 40 nm;

Step 5: using a Ga migration enhanced epitaxy method on the low-In composition InGaN transition layer 404 , specifically using the sequence shown in FIG. 5 to prepare an InGaN epitaxial layer 405 . Except for the connection or interruption of the In source and the N source, other epitaxy parameters can remain unchanged during the preparation process. After feeding Ga source, In source and N source at the same time for a period of time, the In source and N source are interrupted, the Ga source continues to be fed, and the target In composition is achieved by controlling the Ga source feed time. These two parts constitute a growth cycle, repeat this growth cycle 150 times, and then a 150 nm thick InGaN epitaxial layer 405 with an In composition of 18% can be prepared.

Further, the epitaxial growth method of the InGaN epitaxial layer 405 is metal-organic chemical vapor deposition.

Example 3

The difference between this embodiment and embodiment 1 lies in that: the conductivity type of the InGaN epitaxial layer is p-type; the growth thickness of a single period of the InGaN epitaxial layer is 0.5 nm, and the total material thickness is 100 nm. During the preparation process, step 4 consists of 200 cycles of Ga migration-enhanced epitaxy. During the growth process, the acceptor doping source magnesium source is introduced. The magnesium source can be introduced continuously or pulsed. .

Further, the epitaxial growth method of the InGaN epitaxial layer adopts molecular beam epitaxy.

Example 4

As shown in Figure 6, this embodiment provides a typical application of the InGaN semiconductor material, that is, to make a PIN structure optoelectronic device using the InGaN semiconductor material. , and the p-type layer 504 constitutes.

Further, the underlying material 501 may be various substrates, templates or buffer layers. More specifically, in this embodiment, a high-temperature GaN buffer layer is selected.

Further, the n-type layer 502 may be an n-type GaN material, or an n-type InGaN material or other n-type materials. More specifically, in this embodiment, an n-type GaN material is selected, the thickness of which is 500 nm, and the doping source is a silicon source.

Further, the InGaN epitaxial layer 503 is prepared by a Ga migration enhanced epitaxy method, and the timing as shown in FIG. 2 can be adopted, or the timing as shown in FIG. 5 can be used to feed In source, N source and Ga source respectively. During the preparation process, no dopant source may be introduced to form an unintentionally doped InGaN material, or a small amount of acceptor-type dopant source may be introduced to form an acceptor-compensated intrinsic type material. More specifically, in this embodiment, the sequence shown in FIG. 2 is used to prepare an unintentionally doped InGaN epitaxial layer. The thickness of a single period is 0.7 nm, the total thickness is 140 nm, and the In composition is 14%.

Further, the p-type layer 504 may be a p-type GaN material, or a p-type InGaN material or other p-type materials. More specifically, in this embodiment, a p-type GaN material is selected, the thickness of which is 100 nm, and the dopant source is a magnesium source.

The preparation process of the PIN structure optoelectronic device comprises the following steps:

Step 1: Selecting a high-temperature GaN buffer layer as the underlying material 501;

Step 2: growing an n-type layer 502 on the underlying material 501, specifically, the n-type layer 502 is an n-type GaN material with a thickness of 500 nm;

Step 3: growing an InGaN epitaxial layer 503 on the n-type layer 502, this layer is prepared by the Ga migration enhanced epitaxy method, and the unintentionally doped InGaN epitaxial layer is prepared by using the sequence in Figure 2, and the thickness of a single period is 0.7nm , the number of periods is 200, the total thickness is 140nm, and the In component is 14%;

Step 4: growing a p-type layer 504 on the InGaN epitaxial layer 503, specifically, the p-type layer 504 is made of a p-type GaN material with a thickness of 100 nm;

Further, the epitaxial growth method of the InGaN epitaxial layer 503 is a metal-organic chemical vapor deposition method.

Example 5

As shown in Figure 7, this embodiment provides another typical application of the InGaN semiconductor material, using the InGaN semiconductor material to make a GaN/InGaN multi-quantum well structure, which includes a bottom material 601, an n-type layer 602, GaN/InGaN Multiple quantum wells 603 , electron blocking layer 604 , and p-type layer 605 .

Further, the underlying material 601 may be various substrates, templates or buffer layers. More specifically, in this embodiment, a high-temperature GaN buffer layer is selected.

Further, the n-type layer 602 may be an n-type GaN material, or an n-type InGaN material or other n-type materials. More specifically, in this embodiment, an n-type GaN material is selected, the thickness of which is 500 nm, and the doping source is a silicon source.

Further, the GaN/InGaN multiple quantum well 603 is composed of several periods of GaN barrier layers and InGaN potential well layers. In each period, the thickness of the GaN barrier layer is 5-20 nm, which can be doped with donor impurities It is also possible not to dope donor impurities, and the thickness of the InGaN potential well layer is 1 to 10nm. It is not necessary to introduce any doping source to form an unintentionally doped InGaN material, or to introduce a small amount of acceptor-type doping source to form Acceptor compensated intrinsic type materials. The InGaN potential well layer is prepared by the Ga migration-enhanced epitaxy method, and the timing shown in FIG. 2 can be adopted, or the timing shown in FIG. 5 can be used to feed In source, N source and Ga source respectively. More specifically, in this embodiment, the unintentionally doped InGaN potential well is prepared in the sequence shown in Figure 2. During the preparation of a single InGaN potential well layer, the thickness of the Ga migration-enhanced epitaxy cycle is 0.5 nm, and the cycle repetition number is 5, the total thickness is 2.5nm, and the In composition of the InGaN potential well layer is 25%.

Further, the electron blocking layer 604 may be a p-type AlGaN material, or a composition graded AlGaN material or an AlInGaN/GaN superlattice material. More specifically, in this embodiment, a p-type AlGaN material is selected, the Al composition is 30%, the thickness is 30 nm, and the hole concentration is 3×10 ¹⁷ cm ⁻³ .

Further, the p-type layer 605 may be a p-type GaN material, or a p-type InGaN material or other p-type materials. More specifically, in this embodiment, a p-type GaN material is selected, the thickness of which is 100 nm, and the dopant source is a magnesium source.

The preparation process of the GaN/InGaN multi-quantum well structure comprises the following steps:

Step 1: selecting a high-temperature GaN buffer layer as the underlying material 601;

Step 2: growing an n-type layer 602 on the underlying material 601, specifically, the n-type layer 602 is an n-type GaN material with a thickness of 500 nm;

Step 3: growing GaN/InGaN multiple quantum wells 603 on the n-type layer 602, the specific process is as follows:

(1) epitaxial growth barrier layer GaN, its thickness can be 5-20nm, more specifically, the thickness of barrier layer GaN in this embodiment is 7.5nm;

(2) Epitaxial growth potential well layer InGaN semiconductor material, using Ga migration enhanced epitaxy method, as shown in the sequence preparation in Figure 2, the periodic thickness of Ga migration enhancement is 0.5nm, the total thickness is 2.5nm, the prepared InGaN potential well layer In The composition is 25%;

(3) Repeat (1) and (2) several times to prepare GaN/InGaN multiple quantum wells 603;

Step 4: growing an electron blocking layer 604 on the GaN/InGaN multiple quantum well 603, specifically, the electron blocking layer 604 is made of p-type AlGaN material, the Al composition is 30%, the thickness is 30nm, and the hole concentration is 3× 10 ¹⁷ cm ^-3 ;

Step 5: growing a p-type layer 605 on the electron blocking layer 604, specifically, the p-type layer 605 is a p-type GaN material with a thickness of 100 nm.

Apparently, the above-mentioned embodiments of the present invention are only examples for clearly illustrating the technical solution of the present invention, rather than limiting the specific implementation manner of the present invention. Any modification, equivalent replacement and improvement made within the spirit and principle of the claims of the present invention shall be included in the protection scope of the claims of the present invention.

Claims (8)

1. A kind of InGaN semiconductor material, comprise InGaN epitaxial layer, described InGaN epitaxial layer is made up of several growth periods, it is characterized in that, described InGaN epitaxial layer adopts Ga migration enhanced epitaxy method to prepare, during preparation, pass to growth source feed amount The periodic modulation of the InGaN epitaxial layer is grown, and the N source and the In source used are simultaneously connected or interrupted to the reaction chamber within a single growth cycle of the InGaN epitaxial layer, and the Ga source. 2 . The InGaN semiconductor material according to claim 1 , wherein the coverage range of the In composition x of the InGaN epitaxial layer is 0<x<100%. 3. A kind of InGaN semiconductor material according to claim 1 or 2, is characterized in that, the In composition of described InGaN epitaxial layer is adjusted Ga source, In source and N source flow rate or Ga source, In source in a single cycle and N source on and off time to achieve component regulation. 4. An InGaN semiconductor material according to claim 1 or 2, characterized in that the total thickness of the InGaN epitaxial layer is 0.5 nm-2 μm, and the thickness of a single period is 0.5-6 nm. 5. A kind of InGaN semiconductor material according to claim 1 or 2, is characterized in that, the conductivity type of described InGaN semiconductor material is unintentional doping, acceptor compensation intrinsic type, n-type doping or p-type doping miscellaneous. 6. The epitaxial preparation method of a kind of InGaN semiconductor material according to any one of claims 1 to 5, characterized in that the N source and the In source used for the growth of the InGaN epitaxial layer in a single period are connected or interrupted at the same time, and the Ga source There are two ways to access the sequence: (1) When the N source and the In source are connected at the same time, the Ga source is not connected, and InN is grown for a period of time, and then the Ga source is connected when the N source and the In source are interrupted at the same time to form InGaN. These two parts constitute a growth cycle; (2) The Ga source is connected together with the N source and the In source, and then the N source and the In source are interrupted at the same time. During the InGaN growth process, the Ga source is never interrupted, and the N source and the In source are simultaneously connected and interrupted to form a livespan. 7 . The epitaxial preparation method of an InGaN semiconductor material according to claim 6 , wherein the growth method of the InGaN epitaxial layer is a metal-organic chemical vapor deposition method or a molecular beam epitaxy method. 8. The InGaN semiconductor material prepared by the epitaxial preparation method of an InGaN semiconductor material according to claim 6 is applied to an optoelectronic device.