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CN110601159B - Comprehensive protection circuit for strong transient electromagnetic pulse of radio frequency link - Google Patents

Comprehensive protection circuit for strong transient electromagnetic pulse of radio frequency link Download PDF

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Publication number
CN110601159B
CN110601159B CN201910918792.3A CN201910918792A CN110601159B CN 110601159 B CN110601159 B CN 110601159B CN 201910918792 A CN201910918792 A CN 201910918792A CN 110601159 B CN110601159 B CN 110601159B
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circuit
radio frequency
electromagnetic pulse
pass filter
transient electromagnetic
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CN110601159A (en
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肖显利
胡见龙
罗小华
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Shenzhen Superlink Technology Co ltd
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Shenzhen Superlink Technology Co ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/005Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/006Casings specially adapted for signal processing applications, e.g. CATV, tuner, antennas amplifier
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0066Constructional details of transient suppressor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention relates to a radio frequency link strong transient electromagnetic pulse comprehensive protection circuit, which comprises: a parallel resonance response circuit including a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1, and a second semiconductor device D2. The invention does not adopt the traditional gas discharge tube and solid piezoresistor, is easy to reduce the distributed parameters in the radio frequency microwave frequency range, realizes the impedance matching of the radio frequency network, improves the reliability of the comprehensive protection circuit, has good radio frequency performance and environmental temperature adaptability in the effective ultra-wideband working bandwidth, can simultaneously complete the absorption inhibiting function of various strong transient electromagnetic pulses and the effective transmission of radio frequency coaxial signals, solves the compatibility problem of various strong transient electromagnetic pulse protection circuits, and obtains obvious comprehensive protection effect of various strong transient electromagnetic pulses.

Description

Comprehensive protection circuit for strong transient electromagnetic pulse of radio frequency link
Technical Field
The invention relates to the field of electromagnetic pulse protection, in particular to a comprehensive protection circuit for strong transient electromagnetic pulses of a radio frequency link.
Background
As various wireless devices and facilities are widely applied to engineering fields such as industrial and agricultural production, scientific research, outside air detection, national defense construction, national soil security defense and the like, various wireless transceiver systems are placed in complex electromagnetic environments. The wireless transceiver system equipment, particularly the antenna and the coaxial feeder line, are exposed outside the equipment and are extremely vulnerable to the invasion of various transient electromagnetic pulses in a complex electromagnetic environment, and the key sensitive equipment in the system is damaged by introducing the various transient electromagnetic pulses into the transceiver system through the antenna and the feeder line, so that the normal operation of the wireless equipment and the equipment is affected.
Along with the development of electromagnetic pulse technology, the electromagnetic pulse radiation field intensity reaches hundreds of kV/m, the pulse rising time is ns level, and electromagnetic pulse voltage and current induced on communication equipment and other equipment can cause the communication equipment and other equipment to be instantaneously broken down or burned out; therefore, electromagnetic pulse is not only a problem of transient high-energy impact, but also a problem of high-frequency and high-strength electromagnetic interference at the same time, and strong electromagnetic pulse protection is required to be carried out on communication electronic equipment.
In the field of strong electromagnetic pulse protection, the technology of slow-edge strong electromagnetic pulse (such as a lightning electromagnetic pulse) protection is relatively mature, is limited by principles and device performance, has the problem of insufficient response time in protection, basically loses the protection function for high-energy electromagnetic pulses with shorter pulse rising edges, and is still in a starting stage for other types of fast-edge strong electromagnetic pulse (such as a nuclear electromagnetic pulse and a high-power microwave pulse) protection technology.
How to implement effective comprehensive protection of strong electromagnetic pulse for key equipment on a radio frequency link by a circuit, not only effectively saving the electromagnetic pulse protection cost of the equipment, but also improving the protection performance of the equipment, is a technical problem which needs to be solved urgently for the strong transient electromagnetic pulse protection of the current radio frequency link.
Disclosure of Invention
The invention aims to provide a comprehensive protection circuit for strong transient electromagnetic pulses of a radio frequency link, which solves the problem that a transceiver system of wireless equipment and facilities works uninterruptedly in extremely complex and severe electromagnetic environments and can effectively protect various harmful transient strong electromagnetic pulses from being disturbed and damaged.
The technical aim of the invention is realized by the following technical scheme:
A radio frequency link strong transient electromagnetic pulse integrated protection circuit, comprising: a parallel resonance response circuit including a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1, and a second semiconductor device D2; one end of the first inductive device L1 is connected with one end of the second inductive device L2 and one end of the first capacitive device C1, the other end of the first inductive device L1 is connected with the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
By adopting the technical scheme, the parallel resonance response circuit generates a parallel resonance effect on the transient strong electromagnetic pulse of the fast front edge (hereinafter referred to as the fast edge), and the strong fast edge pulse is directly restrained within the characteristic clamping voltage range of D1 and D2 through L1, D1 and D2, so that the peak of the fast edge strong electromagnetic pulse is effectively restrained, and the energy of the fast edge strong electromagnetic pulse is absorbed and discharged.
The invention is further provided with: the parallel resonant circuit further comprises a front-stage high-pass filter circuit which is arranged at the front stage of the parallel resonant response circuit.
By adopting the technical scheme, the unidirectional multi-type strong transient electromagnetic pulse comprehensive protection circuit is formed. The front-stage high-pass filter circuit directly discharges surge overcurrent induced by the slow-speed front-edge (hereinafter referred to as 'slow-edge') transient strong electromagnetic pulse to the ground and limits the induced surge overvoltage to a very low potential (below 10V), so that the invasion and damage of the slow-edge transient strong electromagnetic pulse (such as lightning electromagnetic pulse) to a receiving and transmitting system are effectively prevented.
The invention is further provided with: the front-stage high-pass filter circuit comprises a third inductive device L3 and a third capacitive device C3, one end of the third inductive device L3 is connected with one end of the third capacitive device C3 and is used as an input end of the front-stage high-pass filter circuit, the other end of the third capacitive device C3 is used as an output end of the front-stage high-pass filter circuit, and the other end of the third inductive device L3 is grounded.
By adopting the technical scheme, L3 is a slow-edge strong electromagnetic pulse suppression structure formed by directly shorting to the ground, the surge pulse voltage induced by microsecond (us) slow-edge strong electromagnetic pulses (such as lightning electromagnetic pulses) forms a short circuit to the ground, the voltage is limited to be very low in potential (lower than 10V), a ground discharge passage is formed by surge pulse current, and C3 has an isolation effect on slow-edge pulses, so that the invasion and damage of the slow-edge transient strong electromagnetic pulses (such as lightning electromagnetic pulses) to a receiving and transmitting system are effectively prevented.
The invention is further provided with: the parallel resonant circuit further comprises a rear-stage high-pass filter circuit which is arranged at the rear stage of the parallel resonant response circuit.
By adopting the technical scheme, the unidirectional multi-type strong transient electromagnetic pulse comprehensive protection circuit is formed. The rear-stage high-pass filter circuit directly discharges surge overcurrent induced by the slow-speed front-edge (hereinafter referred to as 'slow-edge') transient strong electromagnetic pulse to the ground and limits the induced surge overvoltage to a very low potential (below 10V), so that the invasion and damage of the slow-edge transient strong electromagnetic pulse (such as lightning electromagnetic pulse) to a receiving and transmitting system are effectively prevented.
The invention is further provided with: the rear-stage high-pass filter circuit comprises a fourth inductive device L4 and a fourth capacitive device C4, one end of the fourth inductive device L4 is connected with one end of the fourth capacitive device C4 and serves as an output end of the rear-stage high-pass filter circuit, the other end of the fourth capacitive device C4 serves as an input end of the rear-stage high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded.
By adopting the technical scheme, L4 is directly short-circuited to the ground to form a slow-edge strong electromagnetic pulse inhibition structure, the surge pulse voltage induced by microsecond (us) slow-edge strong electromagnetic pulses (such as lightning electromagnetic pulses) forms a short circuit to the ground, the voltage is limited to be very low in potential (lower than 10V), the surge pulse current forms a ground discharge passage, and C4 has an isolation effect on the slow-edge pulses, so that the invasion and damage of the slow-edge transient strong electromagnetic pulses (such as lightning electromagnetic pulses) to a receiving and transmitting system are effectively prevented.
The invention is further provided with: the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors.
By adopting the technical scheme, the inductor has the characteristic of preventing the alternating current from passing through and enabling the direct current to pass through smoothly, and the higher the frequency is, the higher the coil impedance is; thus, the main function of the inductor is to form a resonant filter circuit with the capacitor.
The invention is further provided with: the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors.
By adopting the technical scheme, the main function of the capacitor is to form a resonant filter circuit with the inductor.
The invention is further provided with: the first semiconductor device D1 and the second semiconductor device D2 are semiconductor devices having a fast response.
By adopting the technical scheme, the semiconductor device with the rapid response forms an energy release path and a pulse spike voltage clamp for nanosecond (ns) and below rapid-edge strong electromagnetic pulses, and limits the rapid-edge pulse spike voltage within an acceptable range.
The invention is further provided with: the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube.
By adopting the technical scheme, the avalanche diode, the transient voltage suppression diode or the PIN diode is preferentially adopted, but the method is not limited to the above types.
The invention is further provided with: the parallel resonant circuit further comprises a front-stage high-pass filter circuit and a rear-stage high-pass filter circuit, wherein the front-stage high-pass filter circuit is arranged at the front stage of the parallel resonant circuit, and the rear-stage high-pass filter circuit is arranged at the rear stage of the parallel resonant circuit.
By adopting the technical scheme, the front-stage high-pass filter circuit, the rear-stage high-pass filter circuit and the parallel resonance response circuit form a bidirectional reciprocity protection structure.
In summary, the invention has the following beneficial effects:
1. the traditional gas discharge tube and solid piezoresistor are not adopted, so that distribution parameters in the radio frequency microwave frequency range are easy to reduce, impedance matching of a radio frequency network is realized, and the reliability of the comprehensive protection circuit is improved;
2. The device has good radio frequency performance and environmental temperature adaptability in an effective ultra-wideband working bandwidth;
3. The absorption inhibiting function of various strong transient electromagnetic pulses and the effective transmission of radio frequency coaxial signals can be completed simultaneously;
4. The compatibility problem of various strong transient electromagnetic pulse protection circuits is solved, and the remarkable comprehensive protection effect of various strong transient electromagnetic pulses is achieved;
5. The two ends are directly connected with the radio frequency transmission line, so that the device is convenient for receiving and transmitting equipment of various equipment, and plays a role in comprehensively protecting transient strong electromagnetic pulses on key sensitive parts.
Drawings
FIG. 1 is a schematic circuit diagram of embodiment 1;
FIG. 2 is a schematic circuit diagram of embodiment 2;
FIG. 3 is a schematic circuit diagram of embodiment 3;
fig. 4 is a schematic circuit diagram of embodiment 4.
In the figure, 1, a parallel resonance response circuit; 2. a front-stage high-pass filter circuit; 3. a post-stage high-pass filter circuit.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Example 1: a radio frequency link strong transient electromagnetic pulse comprehensive protection circuit, as shown in fig. 1, comprising: a parallel resonance response circuit including a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1, and a second semiconductor device D2; one end of the first inductive device L1 is connected with one end of the second inductive device L2 and one end of the first capacitive device C1 (and is connected with a circuit with a corresponding matching impedance structure to form a radio frequency input structure J2 and a radio frequency output structure J1), the other end of the first inductive device L1 is connected with the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded. The fast-edge strong transient electromagnetic pulse suppression circuit is formed.
Example 2: as shown in fig. 2, the difference from embodiment 1 is that a front-stage high-pass filter circuit 2 is provided in front of the parallel resonant response circuit 1.
The front-stage high-pass filter circuit 2 comprises a third inductive device L3 and a third capacitive device C3, one end of the third inductive device L3 is connected with one end of the third capacitive device C3 and is used as an input end of the front-stage high-pass filter circuit (the input end is connected with a circuit with a corresponding matching impedance structure to form a radio frequency input structure J2), the other end of the third capacitive device C3 is used as an output end of the front-stage high-pass filter circuit, and the other end of the third inductive device L3 is grounded. The comprehensive protection circuit for unidirectional multi-type strong transient electromagnetic pulses is formed.
Example 3: as shown in fig. 3, the difference from embodiment 1 is that a post-stage high-pass filter circuit 3 is provided at the post-stage of the parallel resonance response circuit 1.
The post-stage high-pass filter circuit 3 comprises a fourth inductive device L4 and a fourth capacitive device C4, one end of the fourth inductive device L4 is connected with one end of the fourth capacitive device C4 and is used as an output end of the post-stage high-pass filter circuit (the output end is connected with a circuit with a corresponding matching impedance structure to form a radio frequency output structure J1), the other end of the fourth capacitive device C4 is used as an input end of the post-stage high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded. The comprehensive protection circuit for unidirectional multi-type strong transient electromagnetic pulses is formed.
Preferably, the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are inductors; the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors; the first semiconductor device D1 and the second semiconductor device D2 are semiconductor devices having a fast response; the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube, but is not limited to these.
Example 4: a radio frequency link strong transient electromagnetic pulse comprehensive protection circuit, as shown in fig. 4, comprising: the parallel resonance response circuit 1, the front-stage high-pass filter circuit 2 and the rear-stage high-pass filter circuit 3 are respectively connected with the front-stage high-pass filter circuit 2 and the rear-stage high-pass filter circuit 3, and a bidirectional reciprocity protection structure is formed.
The parallel resonance response circuit 1 includes a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1, and a second semiconductor device D2; the front-stage high-pass filter circuit 2 comprises a third inductive device L3 and a third capacitive device C3; the post-stage high-pass filter circuit 3 comprises a fourth inductive device L4 and a fourth capacitive device C4.
One end of the third inductive device L3 is connected to one end of the third capacitive device C3 and is used as an input end of the front-stage high-pass filter circuit 2, the other end of the third capacitive device C3 is used as an output end of the front-stage high-pass filter circuit 2, and the other end of the third inductive device L3 is grounded; the input end of the front-stage high-pass filter circuit 2 is connected with a circuit with a corresponding matched impedance structure to form a radio frequency input structure J2.
One end of the fourth inductive device L4 is connected to one end of the fourth capacitive device C4 and is used as an output end of the rear-stage high-pass filter circuit 3, the other end of the fourth capacitive device C4 is used as an input end of the rear-stage high-pass filter circuit 3, and the other end of the fourth inductive device L4 is grounded; the output end of the rear-stage high-pass filter circuit 3 is connected with a circuit with a corresponding matched impedance structure to form a radio frequency output structure J1.
One end of the first inductive device L1 is connected with one end of the second inductive device L2 and one end of the first capacitive device C1 and is connected with the output end of the front-stage high-pass filter circuit 2 and the input end of the rear-stage high-pass filter circuit 3, the other end of the first inductive device L1 is connected with the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
Preferably, the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are inductors; the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors; the first semiconductor device D1 and the second semiconductor device D2 are semiconductor devices having a fast response; the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube, but is not limited to these.
The LC devices are mutually matched to form various frequency bandwidths, and the intermediate-stage parallel resonant network has no influence on the working frequency band and radio frequency parameters of the whole circuit. The traditional surge absorbing devices such as discharge tubes and piezoresistors are not adopted, and only passive devices such as an inductor L, a capacitor C and a quick response semiconductor device are adopted, so that the comprehensive protection effect of various strong transient electromagnetic pulses is achieved. The circuit of the invention has two ends directly connected with the radio frequency transmission line, is convenient for various equipment receiving and transmitting equipment, and plays a role in comprehensively protecting transient strong electromagnetic pulse on key sensitive parts.
The two-stage high-pass filtering LC circuit consists of L3, C3, L4 and C4, wherein L2 is symmetrically distributed to form a two-stage pi-type high-pass filtering circuit, the middle stage L2, L1, C2, D1 and D2 form a parallel resonance response circuit, a parallel resonance effect is generated on fast-edge transient strong electromagnetic pulse, the fast-edge pulse is directly restrained within the characteristic clamping voltage range of D1 and D2 through L4, D1 and D2, the peak of the fast-edge strong electromagnetic pulse is restrained effectively, the energy of the fast-edge strong electromagnetic pulse is absorbed and released, and the two ends of the circuit are connected with a circuit with a corresponding matching impedance structure to form a radio-frequency input structure J2 and an output structure J1.
L2, L3 and L4 are directly short-circuited to the ground to form a slow-edge strong electromagnetic pulse suppression structure, surge overcurrent induced by the slow-edge transient strong electromagnetic pulse is directly discharged to the ground, and the induced surge overvoltage is limited to a very low potential (below 10V), so that the invasion and damage of the slow-edge transient strong electromagnetic pulse (such as a lightning electromagnetic pulse) to a receiving and transmitting system are effectively prevented. The two-stage high-pass LC filter and the middle parallel resonant circuit form a symmetrical reciprocal circuit structure together, and can effectively play the comprehensive inhibition and protection roles of various fast-edge and slow-edge strong electromagnetic pulses in a cooperative mode.
The invention has reconstruction function, for example, the two-stage cascade slow-edge strong transient electromagnetic pulse suppression circuit is formed by removing the middle resonant stage L1, C2, D1 and D2 circuits; or only L3& C3& L2 and L4& C4& L2 are reserved to form a symmetrical reciprocity slow-edge strong transient electromagnetic pulse suppression circuit; or the pi-type high-pass filter circuits L3& C3 and L4& C4 with symmetrical two sides are removed to form a fast-edge strong transient electromagnetic pulse suppression circuit; or any one side of the LC high-pass filter circuit L3& C3 or L4& C4 is removed to form a unidirectional multi-type strong transient electromagnetic pulse comprehensive protection circuit; or only L3& C3 or L4& C4 is reserved to form a unidirectional slow-edge strong transient electromagnetic pulse protection circuit.
The present embodiment is only for explanation of the present invention and is not to be construed as limiting the present invention, and modifications which do not creatively contribute to the present embodiment can be made by those skilled in the art after reading the present specification as required, but are protected by patent laws within the protection scope of the present invention.

Claims (10)

1. The utility model provides a radio frequency link strong transient electromagnetic pulse synthesizes protection circuit which characterized in that includes: a parallel resonance response circuit including a first inductive device L1, a second inductive device L2, a first capacitive device C1, a second capacitive device C2, a first semiconductor device D1, and a second semiconductor device D2; one end of the first inductive device L1 is connected with one end of the second inductive device L2 and one end of the first capacitive device C1, the other end of the first inductive device L1 is connected with the other end of the first capacitive device C1, one end of the first semiconductor device D1, one end of the second semiconductor device D2 and one end of the second capacitive device C2, and the other end of the second inductive device L2, the other end of the first semiconductor device D1, the other end of the second semiconductor device D2 and the other end of the second capacitive device C2 are all grounded.
2. The radio frequency link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonant circuit further comprises a front-stage high-pass filter circuit which is arranged at the front stage of the parallel resonant response circuit.
3. The radio frequency link strong transient electromagnetic pulse integrated protection circuit of claim 2, wherein: the front-stage high-pass filter circuit comprises a third inductive device L3 and a third capacitive device C3, one end of the third inductive device L3 is connected with one end of the third capacitive device C3 and is used as an input end of the front-stage high-pass filter circuit, the other end of the third capacitive device C3 is used as an output end of the front-stage high-pass filter circuit, and the other end of the third inductive device L3 is grounded.
4. The radio frequency link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonant circuit further comprises a rear-stage high-pass filter circuit which is arranged at the rear stage of the parallel resonant response circuit.
5. The rf link strong transient electromagnetic pulse integrated protection circuit of claim 4, wherein: the rear-stage high-pass filter circuit comprises a fourth inductive device L4 and a fourth capacitive device C4, one end of the fourth inductive device L4 is connected with one end of the fourth capacitive device C4 and serves as an output end of the rear-stage high-pass filter circuit, the other end of the fourth capacitive device C4 serves as an input end of the rear-stage high-pass filter circuit, and the other end of the fourth inductive device L4 is grounded.
6. The rf link strong transient electromagnetic pulse integrated protection circuit of any of claims 1-5, wherein: the first inductive device L1, the second inductive device L2, the third inductive device L3 and the fourth inductive device L4 are all inductors.
7. The rf link strong transient electromagnetic pulse integrated protection circuit of any of claims 1-5, wherein: the first capacitive device C1, the second capacitive device C2, the third capacitive device C3 and the fourth capacitive device C4 are all capacitors.
8. The rf link strong transient electromagnetic pulse integrated protection circuit of any of claims 1-5, wherein: the first semiconductor device D1 and the second semiconductor device D2 are semiconductor devices having a fast response.
9. The radio frequency link strong transient electromagnetic pulse integrated protection circuit of claim 8, wherein: the semiconductor device with fast response is an avalanche diode, a transient voltage suppression diode or a PIN tube.
10. The radio frequency link strong transient electromagnetic pulse integrated protection circuit of claim 1, wherein: the parallel resonant circuit further comprises a front-stage high-pass filter circuit and a rear-stage high-pass filter circuit, wherein the front-stage high-pass filter circuit is arranged at the front stage of the parallel resonant circuit, and the rear-stage high-pass filter circuit is arranged at the rear stage of the parallel resonant circuit.
CN201910918792.3A 2019-09-26 2019-09-26 Comprehensive protection circuit for strong transient electromagnetic pulse of radio frequency link Active CN110601159B (en)

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CN115225043B (en) * 2022-07-27 2024-11-15 中国民航大学 Electromagnetic protection circuit for low-noise amplifier of Beidou receiver

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JP2001044883A (en) * 1999-07-29 2001-02-16 Murata Mfg Co Ltd High frequency switching component
JP2002171149A (en) * 2000-11-30 2002-06-14 Harison Toshiba Lighting Corp Variable attenuator
JP4224802B2 (en) * 2002-03-18 2009-02-18 日立金属株式会社 High-pass filter, multiband antenna switch circuit using the same, multiband antenna switch laminated module, and communication apparatus
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