CN110540368B - Deplating liquid and deplating process - Google Patents
Deplating liquid and deplating process Download PDFInfo
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- CN110540368B CN110540368B CN201810550798.5A CN201810550798A CN110540368B CN 110540368 B CN110540368 B CN 110540368B CN 201810550798 A CN201810550798 A CN 201810550798A CN 110540368 B CN110540368 B CN 110540368B
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- Prior art keywords
- deplating
- water
- polyoxyethylene ether
- penetrant
- hydrogen peroxide
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 title abstract description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 72
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 46
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 27
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 25
- BWDBEAQIHAEVLV-UHFFFAOYSA-N 6-methylheptan-1-ol Chemical compound CC(C)CCCCCO BWDBEAQIHAEVLV-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 6
- 235000011152 sodium sulphate Nutrition 0.000 claims description 6
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 239000004711 α-olefin Substances 0.000 claims description 6
- 150000007529 inorganic bases Chemical class 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 abstract description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003666 anti-fingerprint Effects 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000002357 osmotic agent Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Detergent Compositions (AREA)
Abstract
The invention provides a deplating solution and a deplating process, wherein the deplating solution comprises the following components in percentage by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
Description
Technical Field
The invention relates to the technical field of deplating, in particular to a deplating liquid and a deplating process.
Background
With the progress of society, 2D glass and 3D glass have been applied to electronic products and become a fashion, and compared with traditional plastics and metal mobile phone battery covers, 2D glass and 3D curved surface glass have advantages such as frivolous, transparent clean, anti-fingerprint, anti-dazzle, scrape resistance, weatherability. Furthermore, the deposition of LOGO (an NCVM film) on glass is becoming a fashion trend, and the requirements for the deplating process are becoming more and more strict. The electroplating LOGO comprises the following components: the thickness of the electroplated LPGO is 45-60 mu m.
In the process of deplating and electroplating LOGO, problems of over-retreating of LOGO, tooth lack and pocking marks caused by silk printing ink and the like can be caused to the LOGO, so that the yield of deplated products is low.
Disclosure of Invention
In view of the above, the present invention is directed to a deplating solution and a deplating process, which have a high product yield during deplating.
The invention provides a deplating solution which comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water.
Preferably, the deplating solution specifically consists of the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
Preferably, the isooctanol polyoxyethylene ether penetrant is selected from model OEP-70 penetrant and/or OEP-89 penetrant.
The invention provides a deplating process for glass containing a vacuum non-conducting coating, which comprises the following steps:
placing the glass containing the non-conductive coating film in the deplating solution of the technical scheme for deplating, and deplating again after washing;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide.
Preferably, the alkaline composition used for the secondary deplating comprises the following components:
25-35 wt% of inorganic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
Preferably, the deplating temperature is 10-40 ℃; the deplating time is 2-3 min.
Preferably, the temperature of the secondary deplating is 65-75 ℃; the time for deplating again is 80-120 s.
The invention provides a deplating solution which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
Detailed Description
The invention provides a deplating solution which comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water.
The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass.
The deplating solution provided by the invention comprises 30-40% of sulfuric acid by mass, preferably 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39% or 40%. In particular embodiments of the invention, the sulfuric acid is in particular 30%, 35% or 40%.
The deplating solution provided by the invention comprises 2-5% of citric acid, preferably 2%, 3%, 4% or 5%. The citric acid plays a role in complexing and dispersing. In particular embodiments of the invention, the citric acid is in particular 2%, 4% or 5%.
The stripping solution provided by the invention comprises 5-10% of hydrogen peroxide, preferably 5%, 6%, 7%, 8%, 9% or 10%. In particular embodiments of the invention, the hydrogen peroxide is in particular 6%, 7% or 10%.
The deplating solution provided by the invention comprises 1-1.5% of isooctanol polyoxyethylene ether penetrant, preferably 1%, 1.1%, 1.2%, 1.3%, 1.4% or 1.5%. In the invention, the content of the isooctanol polyoxyethylene ether penetrant is specifically 1%, 1.2% or 1.5%. The isooctanol polyoxyethylene ether penetrant is preferably selected from model OEP-70 penetrant and/or OEP-89 penetrant.
In the present invention, the deplating solution preferably specifically consists of the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
The invention provides a deplating process for glass containing a vacuum non-conducting coating, which comprises the following steps:
placing the glass containing the non-conductive coating film in the deplating solution of the technical scheme for deplating, and deplating again after washing;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide.
The process provided by the invention can be used for electroplating LOGO on 2D glass and 3D glass.
In the invention, the deplating temperature is preferably 10-40 ℃; the time for deplating is preferably 2-3 min.
In the invention, the alkaline composition adopted by the secondary deplating comprises the following components:
25-35 wt% of organic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
In the present invention, the inorganic base is preferably one or more selected from sodium hydroxide, potassium hydroxide and barium hydroxide; more preferably selected from sodium hydroxide and/or potassium hydroxide; most preferred is sodium hydroxide.
In the invention, the temperature for secondary deplating is preferably 75-80 ℃; the time for the secondary deplating is preferably 80-120 s.
The invention provides a deplating solution which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
In order to further illustrate the present invention, the following examples are provided to describe the stripping solution and the stripping process in detail, but they should not be construed as limiting the scope of the present invention.
Example 1
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, OEP-701% of penetrating agent and 54% of water;
the alkaline composition adopted by secondary deplating consists of 26 wt% of sodium hydroxide, 1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5 wt% of alpha-olefin sodium sulfonate and 72 wt% of water.
Example 2
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 35 percent of sulfuric acid, 4 percent of citric acid, 7 percent of hydrogen peroxide, 52.8 percent of penetrating agent OEP-891.2 percent and water;
the alkaline composition adopted by secondary deplating consists of 30 wt% of sodium hydroxide, 1.0 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 1.5 wt% of alpha-olefin sodium sulfonate and 67.5 wt% of water.
Example 3
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 50.5% of water and an osmotic agent OEP-891.5%;
the alkaline composition adopted by secondary deplating consists of 35 wt% of sodium hydroxide, 0.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 1.5 wt% of alpha-olefin sodium sulfonate and 63 wt% of water.
Comparative example 1
The deplating solution consists of 30 percent of sulfuric acid, 5 percent of citric acid, 20 percent of hydrogen peroxide, 8 percent of penetrating agent OEP-701 percent and 46 percent of water.
Comparative example 2
The deplating solution consists of 30 percent of sulfuric acid, 5 percent of citric acid, 701 percent of penetrating agent OEP and 64 percent of water.
TABLE 1 Performance test results of the deplating solutions prepared in examples 1 to 3 of the present invention and comparative examples 1 to 2
Throw-in/tablet | Good product/piece | Yield% | Cleanliness/sheet | Deplating time/min | |
Example 1 | 300 | 298 | 99.3 | 298 | 2 |
Example 2 | 300 | 296 | 98.6 | 296 | 1.8 |
Example 3 | 300 | 291 | 97 | 291 | 1.6 |
Example 4 | 300 | 291 | 97 | 291 | 1.7 |
Comparative example 1 | 300 | 182 | 61 | 182 | 2 |
Comparative example 2 | 300 | 186 | 62 | 186 | 1.6 |
From the above examples, the invention provides a deplating solution, which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. The deplating process of glass containing vacuum non-conducting coating film includes the following steps:
putting the glass containing the non-conductive coating film into a deplating solution for deplating, washing with water and deplating again;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide;
the deplating solution comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water; the isooctanol polyoxyethylene ether penetrant is selected from model OEP-70 penetrant and/or OEP-89 penetrant;
the alkaline composition adopted by the secondary deplating comprises the following components:
25-35 wt% of inorganic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
2. The deplating process according to claim 1, wherein the deplating solution specifically comprises the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
3. The deplating process according to claim 1, wherein the deplating temperature is 10-40 ℃; the deplating time is 2-3 min.
4. The deplating process according to claim 3, wherein the temperature of the secondary deplating is 65-75 ℃; the time for deplating again is 80-120 s.
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CN201810550798.5A CN110540368B (en) | 2018-05-31 | 2018-05-31 | Deplating liquid and deplating process |
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CN201810550798.5A CN110540368B (en) | 2018-05-31 | 2018-05-31 | Deplating liquid and deplating process |
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CN110540368B true CN110540368B (en) | 2022-02-08 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101451046A (en) * | 2008-12-30 | 2009-06-10 | 清华大学 | Polishing composite for silicon wafer polishing |
CN106033288A (en) * | 2015-03-17 | 2016-10-19 | 南昌欧菲光学技术有限公司 | Touch screen cover plate and manufacturing method thereof |
CN106048612A (en) * | 2016-07-28 | 2016-10-26 | 昆山金易得环保科技有限公司 | Tin removing liquid and method for removing tin-contained layer on base material |
CN107313056A (en) * | 2017-07-07 | 2017-11-03 | 苏州龙腾万里化工科技有限公司 | A kind of metal strip removes liquid |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9598788B2 (en) * | 2012-09-27 | 2017-03-21 | Applied Materials, Inc. | Electroplating apparatus with contact ring deplating |
US20190031561A1 (en) * | 2016-01-20 | 2019-01-31 | Huawei Technologies Co., Ltd. | Coated glass with window area and fabrication method thereof |
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- 2018-05-31 CN CN201810550798.5A patent/CN110540368B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101451046A (en) * | 2008-12-30 | 2009-06-10 | 清华大学 | Polishing composite for silicon wafer polishing |
CN106033288A (en) * | 2015-03-17 | 2016-10-19 | 南昌欧菲光学技术有限公司 | Touch screen cover plate and manufacturing method thereof |
CN106048612A (en) * | 2016-07-28 | 2016-10-26 | 昆山金易得环保科技有限公司 | Tin removing liquid and method for removing tin-contained layer on base material |
CN107313056A (en) * | 2017-07-07 | 2017-11-03 | 苏州龙腾万里化工科技有限公司 | A kind of metal strip removes liquid |
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