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CN110540368B - Deplating liquid and deplating process - Google Patents

Deplating liquid and deplating process Download PDF

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Publication number
CN110540368B
CN110540368B CN201810550798.5A CN201810550798A CN110540368B CN 110540368 B CN110540368 B CN 110540368B CN 201810550798 A CN201810550798 A CN 201810550798A CN 110540368 B CN110540368 B CN 110540368B
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Prior art keywords
deplating
water
polyoxyethylene ether
penetrant
hydrogen peroxide
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CN201810550798.5A
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CN110540368A (en
Inventor
周群飞
饶桥兵
亢德凯
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Lens Technology Changsha Co Ltd
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Lens Technology Changsha Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075Cleaning of glass

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Detergent Compositions (AREA)

Abstract

The invention provides a deplating solution and a deplating process, wherein the deplating solution comprises the following components in percentage by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.

Description

Deplating liquid and deplating process
Technical Field
The invention relates to the technical field of deplating, in particular to a deplating liquid and a deplating process.
Background
With the progress of society, 2D glass and 3D glass have been applied to electronic products and become a fashion, and compared with traditional plastics and metal mobile phone battery covers, 2D glass and 3D curved surface glass have advantages such as frivolous, transparent clean, anti-fingerprint, anti-dazzle, scrape resistance, weatherability. Furthermore, the deposition of LOGO (an NCVM film) on glass is becoming a fashion trend, and the requirements for the deplating process are becoming more and more strict. The electroplating LOGO comprises the following components: the thickness of the electroplated LPGO is 45-60 mu m.
In the process of deplating and electroplating LOGO, problems of over-retreating of LOGO, tooth lack and pocking marks caused by silk printing ink and the like can be caused to the LOGO, so that the yield of deplated products is low.
Disclosure of Invention
In view of the above, the present invention is directed to a deplating solution and a deplating process, which have a high product yield during deplating.
The invention provides a deplating solution which comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water.
Preferably, the deplating solution specifically consists of the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
Preferably, the isooctanol polyoxyethylene ether penetrant is selected from model OEP-70 penetrant and/or OEP-89 penetrant.
The invention provides a deplating process for glass containing a vacuum non-conducting coating, which comprises the following steps:
placing the glass containing the non-conductive coating film in the deplating solution of the technical scheme for deplating, and deplating again after washing;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide.
Preferably, the alkaline composition used for the secondary deplating comprises the following components:
25-35 wt% of inorganic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
Preferably, the deplating temperature is 10-40 ℃; the deplating time is 2-3 min.
Preferably, the temperature of the secondary deplating is 65-75 ℃; the time for deplating again is 80-120 s.
The invention provides a deplating solution which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
Detailed Description
The invention provides a deplating solution which comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water.
The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass.
The deplating solution provided by the invention comprises 30-40% of sulfuric acid by mass, preferably 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39% or 40%. In particular embodiments of the invention, the sulfuric acid is in particular 30%, 35% or 40%.
The deplating solution provided by the invention comprises 2-5% of citric acid, preferably 2%, 3%, 4% or 5%. The citric acid plays a role in complexing and dispersing. In particular embodiments of the invention, the citric acid is in particular 2%, 4% or 5%.
The stripping solution provided by the invention comprises 5-10% of hydrogen peroxide, preferably 5%, 6%, 7%, 8%, 9% or 10%. In particular embodiments of the invention, the hydrogen peroxide is in particular 6%, 7% or 10%.
The deplating solution provided by the invention comprises 1-1.5% of isooctanol polyoxyethylene ether penetrant, preferably 1%, 1.1%, 1.2%, 1.3%, 1.4% or 1.5%. In the invention, the content of the isooctanol polyoxyethylene ether penetrant is specifically 1%, 1.2% or 1.5%. The isooctanol polyoxyethylene ether penetrant is preferably selected from model OEP-70 penetrant and/or OEP-89 penetrant.
In the present invention, the deplating solution preferably specifically consists of the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
The invention provides a deplating process for glass containing a vacuum non-conducting coating, which comprises the following steps:
placing the glass containing the non-conductive coating film in the deplating solution of the technical scheme for deplating, and deplating again after washing;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide.
The process provided by the invention can be used for electroplating LOGO on 2D glass and 3D glass.
In the invention, the deplating temperature is preferably 10-40 ℃; the time for deplating is preferably 2-3 min.
In the invention, the alkaline composition adopted by the secondary deplating comprises the following components:
25-35 wt% of organic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
In the present invention, the inorganic base is preferably one or more selected from sodium hydroxide, potassium hydroxide and barium hydroxide; more preferably selected from sodium hydroxide and/or potassium hydroxide; most preferred is sodium hydroxide.
In the invention, the temperature for secondary deplating is preferably 75-80 ℃; the time for the secondary deplating is preferably 80-120 s.
The invention provides a deplating solution which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
In order to further illustrate the present invention, the following examples are provided to describe the stripping solution and the stripping process in detail, but they should not be construed as limiting the scope of the present invention.
Example 1
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, OEP-701% of penetrating agent and 54% of water;
the alkaline composition adopted by secondary deplating consists of 26 wt% of sodium hydroxide, 1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5 wt% of alpha-olefin sodium sulfonate and 72 wt% of water.
Example 2
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 35 percent of sulfuric acid, 4 percent of citric acid, 7 percent of hydrogen peroxide, 52.8 percent of penetrating agent OEP-891.2 percent and water;
the alkaline composition adopted by secondary deplating consists of 30 wt% of sodium hydroxide, 1.0 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 1.5 wt% of alpha-olefin sodium sulfonate and 67.5 wt% of water.
Example 3
Placing the glass containing the non-conductive coating film in a deplating solution for deplating for 2min at 25 ℃, and after washing, deplating again for 100s at 70 ℃ by adopting an alkaline composition;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide, and the thickness of the non-conductive coating is 45 micrometers;
the deplating solution consists of 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 50.5% of water and an osmotic agent OEP-891.5%;
the alkaline composition adopted by secondary deplating consists of 35 wt% of sodium hydroxide, 0.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 1.5 wt% of alpha-olefin sodium sulfonate and 63 wt% of water.
Comparative example 1
The deplating solution consists of 30 percent of sulfuric acid, 5 percent of citric acid, 20 percent of hydrogen peroxide, 8 percent of penetrating agent OEP-701 percent and 46 percent of water.
Comparative example 2
The deplating solution consists of 30 percent of sulfuric acid, 5 percent of citric acid, 701 percent of penetrating agent OEP and 64 percent of water.
TABLE 1 Performance test results of the deplating solutions prepared in examples 1 to 3 of the present invention and comparative examples 1 to 2
Throw-in/tablet Good product/piece Yield% Cleanliness/sheet Deplating time/min
Example 1 300 298 99.3 298 2
Example 2 300 296 98.6 296 1.8
Example 3 300 291 97 291 1.6
Example 4 300 291 97 291 1.7
Comparative example 1 300 182 61 182 2
Comparative example 2 300 186 62 186 1.6
From the above examples, the invention provides a deplating solution, which comprises the following components in parts by mass: 30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water. The deplating liquid composed of the specific components with specific contents provided by the invention has higher product yield when used for deplating the electroplating LOGO on glass. The experimental results show that: the product yield of the deplating liquid for deplating the electroplated LOGO on the glass is 97-99.3%.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (4)

1. The deplating process of glass containing vacuum non-conducting coating film includes the following steps:
putting the glass containing the non-conductive coating film into a deplating solution for deplating, washing with water and deplating again;
the non-conductive coating comprises indium oxide, titanium oxide and silicon oxide;
the deplating solution comprises the following components in parts by mass:
30-40% of sulfuric acid, 2-5% of citric acid, 5-10% of hydrogen peroxide, 1-1.5% of isooctyl alcohol polyoxyethylene ether penetrant and the balance of water; the isooctanol polyoxyethylene ether penetrant is selected from model OEP-70 penetrant and/or OEP-89 penetrant;
the alkaline composition adopted by the secondary deplating comprises the following components:
25-35 wt% of inorganic base, 0.5-1.5 wt% of fatty alcohol-polyoxyethylene ether sodium sulfate, 0.5-1.5 wt% of alpha-olefin sodium sulfonate and the balance of water.
2. The deplating process according to claim 1, wherein the deplating solution specifically comprises the following components:
30% of sulfuric acid, 5% of citric acid, 10% of hydrogen peroxide, 1% of isooctyl alcohol polyoxyethylene ether penetrant and 54% of water;
or 35% of sulfuric acid, 4% of citric acid, 7% of hydrogen peroxide, 1.2% of isooctyl alcohol polyoxyethylene ether penetrant and 52.8% of water;
or 40% of sulfuric acid, 2% of citric acid, 6% of hydrogen peroxide, 1.5% of isooctyl alcohol polyoxyethylene ether penetrating agent and 50.5% of water.
3. The deplating process according to claim 1, wherein the deplating temperature is 10-40 ℃; the deplating time is 2-3 min.
4. The deplating process according to claim 3, wherein the temperature of the secondary deplating is 65-75 ℃; the time for deplating again is 80-120 s.
CN201810550798.5A 2018-05-31 2018-05-31 Deplating liquid and deplating process Active CN110540368B (en)

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CN110540368B true CN110540368B (en) 2022-02-08

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451046A (en) * 2008-12-30 2009-06-10 清华大学 Polishing composite for silicon wafer polishing
CN106033288A (en) * 2015-03-17 2016-10-19 南昌欧菲光学技术有限公司 Touch screen cover plate and manufacturing method thereof
CN106048612A (en) * 2016-07-28 2016-10-26 昆山金易得环保科技有限公司 Tin removing liquid and method for removing tin-contained layer on base material
CN107313056A (en) * 2017-07-07 2017-11-03 苏州龙腾万里化工科技有限公司 A kind of metal strip removes liquid

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9598788B2 (en) * 2012-09-27 2017-03-21 Applied Materials, Inc. Electroplating apparatus with contact ring deplating
US20190031561A1 (en) * 2016-01-20 2019-01-31 Huawei Technologies Co., Ltd. Coated glass with window area and fabrication method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451046A (en) * 2008-12-30 2009-06-10 清华大学 Polishing composite for silicon wafer polishing
CN106033288A (en) * 2015-03-17 2016-10-19 南昌欧菲光学技术有限公司 Touch screen cover plate and manufacturing method thereof
CN106048612A (en) * 2016-07-28 2016-10-26 昆山金易得环保科技有限公司 Tin removing liquid and method for removing tin-contained layer on base material
CN107313056A (en) * 2017-07-07 2017-11-03 苏州龙腾万里化工科技有限公司 A kind of metal strip removes liquid

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