CN110526296A - A kind of preparation method of the tungsten disulfide composite film electrode of doped carbon nanometer pipe - Google Patents
A kind of preparation method of the tungsten disulfide composite film electrode of doped carbon nanometer pipe Download PDFInfo
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- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000002131 composite material Substances 0.000 title abstract description 48
- 239000002356 single layer Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract 2
- 239000002041 carbon nanotube Substances 0.000 claims description 38
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 38
- 239000006185 dispersion Substances 0.000 claims description 32
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 239000002048 multi walled nanotube Substances 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000002109 single walled nanotube Substances 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 238000009210 therapy by ultrasound Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 5
- 238000009830 intercalation Methods 0.000 claims description 5
- 230000002687 intercalation Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 claims description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 4
- 229910001416 lithium ion Inorganic materials 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000000502 dialysis Methods 0.000 claims description 3
- 150000002900 organolithium compounds Chemical class 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000000527 sonication Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 238000002242 deionisation method Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000000859 sublimation Methods 0.000 claims 1
- 230000008022 sublimation Effects 0.000 claims 1
- 238000002604 ultrasonography Methods 0.000 claims 1
- 239000008367 deionised water Substances 0.000 abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 abstract description 9
- 238000001914 filtration Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 239000002135 nanosheet Substances 0.000 description 26
- 239000010409 thin film Substances 0.000 description 11
- 238000004299 exfoliation Methods 0.000 description 8
- 238000000967 suction filtration Methods 0.000 description 6
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 4
- 238000004108 freeze drying Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 238000004154 testing of material Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical group [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 230000037427 ion transport Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009831 deintercalation Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal sulfides Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- Carbon And Carbon Compounds (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
Description
技术领域technical field
本发明属于复合薄膜电极材料的制备领域,特别涉及一种掺杂碳纳米管的二硫化钨复合薄膜电极的制备方法。The invention belongs to the field of preparation of composite thin film electrode materials, in particular to a preparation method of a carbon nanotube-doped tungsten disulfide composite thin film electrode.
背景技术Background technique
二维过渡金属硫化物作为常见的类石墨烯材料之一,由于其层状结构弥补了石墨烯无带隙以及易于堆叠从而使比表面积无法高效利用的缺点,引起了广泛的研究。二硫化钨,二硫化钼以及二硫化矾就是此类材料的代表。其中,二硫化钨纳米片层内的原子通过强共价键结合在一起,范德力使纳米片层间叠加,并且由于其有效质量较低,离子的理论迁移率应该是最高的,因此具有良好的电化学性能。Two-dimensional transition metal sulfides, as one of the common graphene-like materials, have attracted extensive research because their layered structure makes up for the shortcomings of graphene without a bandgap and easy stacking, which makes the specific surface area ineffective. Tungsten disulfide, molybdenum disulfide and vitriol disulfide are representatives of such materials. Among them, the atoms in the tungsten disulfide nanosheets are combined together by strong covalent bonds, the van der force makes the nanosheets superimposed, and due to its low effective mass, the theoretical mobility of ions should be the highest, so it has good electrochemical performance.
经研究发现单层二硫化钨纳米片与石墨烯的二维纳米片结构最为相似,都可作为电极材料或应用于催化等方面。然而由于其制备依旧停留于化学气相沉积等对设备要求较高、不易操作无法大批量生产的方法,以及纳米片片层较小不易成膜等限制了其在电化学中的应用。本发明通过液相剥离法获得单层二硫化钨纳米片,并将碳纳米管与二硫化钨纳米片进行了复合,在电化学电极反应中符合纳米结构具有更大的比表面积,加快了电子的传输效率和离子的嵌入和脱出,更多的活性位点以及离子传输通道使复合薄膜电极具有了更加优越的电化学性能。It has been found that the structure of single-layer tungsten disulfide nanosheets is the most similar to the two-dimensional nanosheets of graphene, and both can be used as electrode materials or in catalysis. However, its preparation still remains in chemical vapor deposition and other methods that require high equipment, are difficult to operate and cannot be mass-produced, and the nanosheets are small and difficult to form films, which limit their application in electrochemistry. The invention obtains single-layer tungsten disulfide nanosheets through a liquid phase exfoliation method, and combines carbon nanotubes with tungsten disulfide nanosheets, which conforms to the nanostructure in the electrochemical electrode reaction and has a larger specific surface area, thereby accelerating the electronic The high transmission efficiency and ion intercalation and deintercalation, more active sites and ion transport channels make the composite thin film electrode have more superior electrochemical performance.
CN105870417公开了一种钠离子电池二硫化物/碳纳米管负极复合材料的制备方法,此方法中复合材料的制备过程对实验条件尤其是温度条件要求苛刻,不可于室温下持续制备,步骤繁琐,这使复合材料的制备过程难以脱离实验室,不易实现连续化且大规模制备。CN105870417 discloses a method for preparing a sodium-ion battery disulfide/carbon nanotube negative electrode composite material. The preparation process of the composite material in this method has strict requirements on experimental conditions, especially temperature conditions, and cannot be continuously prepared at room temperature, and the steps are cumbersome. This makes the preparation process of composite materials difficult to leave the laboratory, and it is difficult to achieve continuous and large-scale preparation.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是提供一种掺杂碳纳米管的二硫化钨复合薄膜电极的制备方法,克服现有技术中二硫化钨/碳纳米管复合材料制备过程繁琐、反应条件苛刻、无法于室温下制备等问题,首先通过液相剥离法制备单层二硫化钨纳米片,再将单层二硫化钨纳米片与改性碳纳米管均匀分散于去离子水中,通过简单的抽滤、冷冻干燥得到掺杂碳纳米管的二硫化钨复合薄膜电极。The technical problem to be solved by the present invention is to provide a preparation method of a carbon nanotube-doped tungsten disulfide composite thin film electrode, which overcomes the cumbersome preparation process, harsh reaction conditions and inability of the tungsten disulfide/carbon nanotube composite material in the prior art. For problems such as preparation at room temperature, firstly, single-layer tungsten disulfide nanosheets were prepared by liquid phase exfoliation method, and then the single-layer tungsten disulfide nanosheets and modified carbon nanotubes were uniformly dispersed in deionized water. The tungsten disulfide composite thin film electrode doped with carbon nanotubes is obtained by freeze-drying.
本发明的一种掺杂碳纳米管的二硫化钨复合薄膜的制备方法,包括:A preparation method of a carbon nanotube-doped tungsten disulfide composite film of the present invention includes:
(1)将碳纳米管分散于水中,加入表面活性剂,超声处理,得到碳纳米管分散液;(1) dispersing carbon nanotubes in water, adding a surfactant, and ultrasonically treating to obtain a carbon nanotube dispersion;
(2)将单层二硫化钨分散液和碳纳米管分散液混合,超声处理,得到混合分散液,然后抽滤、冷冻干燥,即得掺杂碳纳米管的二硫化钨复合薄膜。(2) Mixing the single-layer tungsten disulfide dispersion liquid and the carbon nanotube dispersion liquid, ultrasonically treating, to obtain the mixed dispersion liquid, then suction filtration and freeze-drying to obtain the carbon nanotube-doped tungsten disulfide composite film.
上述制备方法的优选方式如下:The preferred mode of above-mentioned preparation method is as follows:
所述步骤(1)中碳纳米管为多壁碳纳米管和/或单壁碳纳米管;表面活性剂为十二烷基苯磺酸钠。In the step (1), the carbon nanotubes are multi-walled carbon nanotubes and/or single-walled carbon nanotubes; the surfactant is sodium dodecylbenzenesulfonate.
所述步骤(1)中碳纳米管与表面活性剂的质量比为1:3。In the step (1), the mass ratio of carbon nanotubes to surfactant is 1:3.
所述步骤(1)中超声处理为用细胞粉碎机进行超声处理,时间为60~120分钟。The ultrasonic treatment in the step (1) is ultrasonic treatment with a cell crusher, and the time is 60-120 minutes.
所述步骤(2)中二硫化钨分散液具体为:以块体二硫化钨为原料,通过液相剥离法制备单层二硫化钨纳米片,将制备的单层二硫化钨纳米片分散于去离子水中,进行超声处理获得不同浓度的二硫化钨分散液;其中超声分散时间为30~60分钟。In the step (2), the tungsten disulfide dispersion is specifically as follows: using bulk tungsten disulfide as a raw material, preparing monolayer tungsten disulfide nanosheets by a liquid phase exfoliation method, and dispersing the prepared monolayer tungsten disulfide nanosheets in In deionized water, ultrasonic treatment is performed to obtain tungsten disulfide dispersions of different concentrations; wherein the ultrasonic dispersion time is 30-60 minutes.
所述步骤(2)中单层二硫化钨由液相剥离法制备,具体为:将二硫化钨粉体分散于正丁基锂的正己烷溶液中,然后在氩气保护下搅拌3~7天,进行锂离子插层,反应完成后,加入正己烷溶液进行稀释,通过3~5次离心洗涤直至除去残留的有机锂化合物,初步得到锂离子插层的二硫化钨纳米片,将纳米片分散在去离子水中超声处理1~2小时后、透析12~24小时进行纯化,将纯化后的悬浮液再次进行离心10~15分钟除去未剥离的二硫化钨,得到剥离好的单层二硫化钨纳米片。In the step (2), the single-layer tungsten disulfide is prepared by the liquid phase exfoliation method, specifically: dispersing the tungsten disulfide powder in the n-hexane solution of n-butyllithium, and then stirring under the protection of argon for 3-7 day, lithium ion intercalation is carried out, after the reaction is completed, n-hexane solution is added for dilution, and the residual organolithium compound is removed by centrifugal washing for 3 to 5 times to initially obtain lithium ion intercalated tungsten disulfide nanosheets. After being dispersed in deionized water for 1 to 2 hours, dialysis was performed for 12 to 24 hours for purification, and the purified suspension was centrifuged again for 10 to 15 minutes to remove the unstripped tungsten disulfide to obtain a stripped monolayer of disulfide. Tungsten nanosheets.
所述剥离温度为20~60℃。The peeling temperature is 20 to 60°C.
所述步骤(2)中单层二硫化钨分散液和碳纳米管分散液的体积比为5:1~1:1;单层二硫化钨分散液的浓度为0.5mg/mL~5mg/mL、碳纳米管分散液的浓度为0.2mg/mL~5mg/mL。In the step (2), the volume ratio of the monolayer tungsten disulfide dispersion to the carbon nanotube dispersion is 5:1 to 1:1; the concentration of the monolayer tungsten disulfide dispersion is 0.5mg/mL to 5mg/mL and the concentration of the carbon nanotube dispersion liquid is 0.2 mg/mL to 5 mg/mL.
所述步骤(2)中二硫化钨与碳纳米管的质量比为5-1:1。In the step (2), the mass ratio of tungsten disulfide to carbon nanotubes is 5-1:1.
所述步骤(2)中超声处理时间为3~10分钟。In the step (2), the ultrasonic treatment time is 3-10 minutes.
所述步骤(2)中抽滤为:水系滤膜进行抽滤,水系滤膜的孔径大小为0.1μm~1μm;The suction filtration in the step (2) is as follows: suction filtration is performed on a water-based filter membrane, and the pore size of the water-based filter membrane is 0.1 μm to 1 μm;
冷冻干燥温度为-5~-60℃,冷冻干燥时间为1~10h。The freeze-drying temperature is -5~-60℃, and the freeze-drying time is 1~10h.
本发明提供一种所述方法制备的掺杂碳纳米管的二硫化钨复合薄膜。The invention provides a carbon nanotube-doped tungsten disulfide composite film prepared by the method.
本发明提供一种基于所述掺杂碳纳米管的二硫化钨复合薄膜的电极材料。The invention provides an electrode material based on the carbon nanotube-doped tungsten disulfide composite thin film.
本发明的一种柔性超级电容器,包括所述掺杂碳纳米管的二硫化钨复合薄膜。A flexible supercapacitor of the present invention includes the carbon nanotube-doped tungsten disulfide composite film.
本发明的一种所述掺杂碳纳米管的二硫化钨复合薄膜的应用,如可应用于能源储存器件如超级电容器、可穿戴电子等领域。The application of the carbon nanotube-doped tungsten disulfide composite film of the present invention can be applied to the fields of energy storage devices such as supercapacitors, wearable electronics and the like.
有益效果beneficial effect
(1)本发明采用液相剥离法制备得到单层二硫化钨纳米片,方法简单易行且工艺过程温和,无需采用现存方法中高温煅烧及水热等反应步骤,室温下即可制备;(1) the present invention adopts the liquid phase exfoliation method to prepare single-layer tungsten disulfide nanosheets, the method is simple and easy to implement and the process is gentle, and it can be prepared at room temperature without adopting the reaction steps such as high temperature calcination and hydrothermal in the existing method;
(2)本发明制备的掺杂碳纳米管的二硫化钨复合薄膜电极具有良好的电化学性能,且形状、大小可通过改变抽滤装置的大小或裁剪等方法按需调整,体积、厚度可通过调整分散液的浓度与体积进行调控,这使其在柔性电子与储能领域有较大的应用前景;(2) The carbon nanotube-doped tungsten disulfide composite thin film electrode prepared by the present invention has good electrochemical performance, and the shape and size can be adjusted as needed by changing the size of the suction filtration device or cutting and other methods, and the volume and thickness can be adjusted as needed. It can be regulated by adjusting the concentration and volume of the dispersion, which makes it have great application prospects in the field of flexible electronics and energy storage;
(3)本发明通过改变碳纳米管的掺杂量或者碳纳米管种类来实现复合薄膜的形貌可控(见实施例2(图4)、实施例3(图5)分别通过改变碳纳米管掺杂量与碳纳米管种类而使符合薄膜微观结构发生改变),通过控制分散液的体积实现了不同厚度复合薄膜的制备;(3) The present invention realizes the controllable morphology of the composite film by changing the doping amount of carbon nanotubes or the type of carbon nanotubes (see Example 2 (Fig. 4) and Example 3 (Fig. 5) respectively by changing the carbon nanotubes. The microstructure of the film is changed according to the doping amount of the tube and the type of carbon nanotubes), and the preparation of composite films with different thicknesses is realized by controlling the volume of the dispersion;
(4)本发明中掺杂碳纳米管的二硫化钨复合薄膜电极具有良好的电化学性能;(4) the tungsten disulfide composite thin film electrode doped with carbon nanotubes in the present invention has good electrochemical performance;
(5)本发明通过碳纳米管的引入增大了复合纳米结构的比表面积及活性位点,增加了离子传输通道,加快了离子的嵌入与脱出,提升电极的了电化学性能;(5) The present invention increases the specific surface area and active site of the composite nanostructure through the introduction of carbon nanotubes, increases the ion transport channel, accelerates the insertion and extraction of ions, and improves the electrochemical performance of the electrode;
(6)本发明中碳纳米管的引入可以扩大单层二硫化钨纳米片的层间距,防止堆叠,提高电化学性能,该复合薄膜具有良好的力学性能,可用于柔性超级电容器的电极材料。(6) The introduction of carbon nanotubes in the present invention can expand the interlayer spacing of single-layer tungsten disulfide nanosheets, prevent stacking, and improve electrochemical performance. The composite film has good mechanical properties and can be used as an electrode material for flexible supercapacitors.
附图说明Description of drawings
图1为实施例1中剥离前二硫化钨粉体以及剥离后二硫化钨纳米片的透射电镜照片。1 is a transmission electron microscope photograph of the tungsten disulfide powder before peeling and the tungsten disulfide nanosheet after peeling in Example 1.
图2为实施例1中制备的掺杂碳纳米管的二硫化钨复合薄膜的数码照片,其中插图为弯折状态下的复合薄膜的数码照片。2 is a digital photo of the carbon nanotube-doped tungsten disulfide composite film prepared in Example 1, wherein the inset is a digital photo of the composite film in a bent state.
图3为实施例1中制备的掺杂碳纳米管的二硫化钨复合薄膜的扫描电镜照片。FIG. 3 is a scanning electron microscope photograph of the carbon nanotube-doped tungsten disulfide composite film prepared in Example 1. FIG.
图4为实施例2中制备的掺杂碳纳米管的二硫化钨复合薄膜的扫描电镜照片。FIG. 4 is a scanning electron microscope photograph of the carbon nanotube-doped tungsten disulfide composite film prepared in Example 2. FIG.
图5为实施例3中制备的掺杂碳纳米管的二硫化钨复合薄膜的扫描电镜照片。FIG. 5 is a scanning electron microscope photograph of the carbon nanotube-doped tungsten disulfide composite film prepared in Example 3. FIG.
图6为实施例1~3中制备的掺杂碳纳米管的二硫化钨复合薄膜的循环伏安曲线及其对应的面积比电容。6 is the cyclic voltammetry curves of the carbon nanotube-doped tungsten disulfide composite films prepared in Examples 1-3 and their corresponding area specific capacitances.
具体实施方式Detailed ways
下面结合具体实施例,进一步阐述本发明。应理解,这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解,在阅读了本发明讲授的内容之后,本领域技术人员可以对本发明作各种改动或修改,这些等价形式同样落于本申请所附权利要求书所限定的范围。The present invention will be further described below in conjunction with specific embodiments. It should be understood that these examples are only used to illustrate the present invention and not to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.
实施例中采用的多壁碳纳米管(>95%,内径:3-5nm,外径:8-15nm,长度:~50μm)、单壁碳纳米管(95%(外径:<2nm,长度:5-30μm))、二硫化钨(99.9%metals basis,2μm)粉体均为市售。Multi-walled carbon nanotubes (>95%, inner diameter: 3-5 nm, outer diameter: 8-15 nm, length: ~50 μm), single-walled carbon nanotubes (95% (outer diameter: <2 nm, length: ~50 μm) used in the examples : 5-30 μm)) and tungsten disulfide (99.9% metals basis, 2 μm) powders are commercially available.
实施例1Example 1
(1)采用液相剥离法制备单层二硫化钨纳米片:通过液相剥离法制备单层二硫化钨纳米片。在室温下将500mg二硫化钨粉体分散于5ml正丁基锂的正己烷溶液中,然后在氩气保护下缓慢搅拌7天进行插层反应。反应完成后,加入正己烷进行稀释洗涤,对分散液在8000rpm转速下离心10分钟,重复5次直至除去残留的有机锂化合物,得到LixWS2。将LixWS2分散在去离子水中超声2小时后透析24小时进行纯化。最后将纯化后的悬浮液在8000rpm转速下离心15分钟除去未剥离的二硫化钨,得到剥离好的单层二硫化钨纳米片。如图1所示,将剥离后的二硫化钨纳米片与剥离前市售二硫化钨粉体进行对比,发现剥离后的二硫化物纳米片片层明显变薄。(1) Preparation of monolayer tungsten disulfide nanosheets by liquid phase exfoliation method: monolayer tungsten disulfide nanosheets were prepared by liquid phase exfoliation method. At room temperature, 500 mg of tungsten disulfide powder was dispersed in 5 ml of n-butyllithium in n-hexane solution, and then slowly stirred for 7 days under argon protection to carry out the intercalation reaction. After the reaction was completed, n-hexane was added for dilution and washing, and the dispersion was centrifuged at 8000 rpm for 10 minutes, and repeated 5 times until the residual organolithium compound was removed to obtain Li x WS 2 . The Li x WS 2 was dispersed in deionized water for 2 h after sonication and dialysis for 24 h for purification. Finally, the purified suspension was centrifuged at 8000 rpm for 15 minutes to remove unpeeled tungsten disulfide, and a single-layer tungsten disulfide nanosheet was obtained. As shown in Figure 1, comparing the exfoliated tungsten disulfide nanosheets with the commercially available tungsten disulfide powder before exfoliation, it is found that the exfoliated disulfide nanosheets are significantly thinner.
(2)将50mg多壁碳纳米管分散于100mL去离子水中,边搅拌边缓慢加入150mg十二烷基苯磺酸钠作为表面活性剂,用细胞粉碎机进行超声处理2小时,制备得到分散均匀的碳纳米管分散液,浓度为0.5mg/mL。(2) Disperse 50 mg of multi-walled carbon nanotubes in 100 mL of deionized water, slowly add 150 mg of sodium dodecyl benzene sulfonate as a surfactant while stirring, and perform ultrasonic treatment with a cell pulverizer for 2 hours to prepare a uniform dispersion. The carbon nanotube dispersion liquid, the concentration is 0.5mg/mL.
(3)在室温下取100mg剥离好的单层二硫化钨纳米片分散于100mL去离子水中,室温下超声处理30分钟得到浓度为1mg/mL的二硫化钨分散液;取40mL0.5 mg/mL的碳纳米管分散液加入60mL去离子水稀释至100mL得到0.2mg/mL的碳纳米管分散液。将两溶液进行过混合,超声处理10分钟得到体积为200mL的混合分散液,其中二硫化钨与碳纳米管的质量比为5:1。(3) Disperse 100 mg of peeled single-layer tungsten disulfide nanosheets in 100 mL of deionized water at room temperature, and ultrasonically treat it for 30 minutes at room temperature to obtain a tungsten disulfide dispersion with a concentration of 1 mg/mL; take 40 mL of 0.5 mg/mL tungsten disulfide dispersion mL of carbon nanotube dispersion was diluted to 100 mL by adding 60 mL of deionized water to obtain 0.2 mg/mL carbon nanotube dispersion. The two solutions were mixed, and ultrasonically treated for 10 minutes to obtain a mixed dispersion with a volume of 200 mL, wherein the mass ratio of tungsten disulfide to carbon nanotubes was 5:1.
(4)将分散好的二硫化钨与碳纳米管混合分散液用孔径为0.22μm的水系滤膜进行抽滤,待水分恰好抽干时及时停止抽滤,初步得到掺杂碳纳米管的二硫化钨复合薄膜。将其放入冰箱冷冻2小时后转移至冷冻干燥机中在-50℃的条件下真空干燥10小时,得到掺杂碳纳米管的二硫化钨复合薄膜,用电子万能材料试验机对其进行拉断测试,当拉伸速度为20mm/min时复合薄膜在拉伸位移为0.89mm处断裂,此时对应的拉伸应力为34.3MPa,表明具有良好的力学性能。(4) Perform suction filtration on the dispersed mixed dispersion of tungsten disulfide and carbon nanotubes with a water-based filter membrane with a pore size of 0.22 μm, stop the suction filtration in time when the water is just drained, and initially obtain the carbon nanotube-doped two Tungsten sulfide composite film. Put it in the refrigerator for 2 hours, transfer it to a freeze dryer, and dry it in a vacuum at -50 °C for 10 hours to obtain a carbon nanotube-doped tungsten disulfide composite film, which is pulled by an electronic universal material testing machine. In the fracture test, when the tensile speed is 20 mm/min, the composite film breaks at the tensile displacement of 0.89 mm, and the corresponding tensile stress at this time is 34.3 MPa, indicating that it has good mechanical properties.
如图2所示,本实施例中制得的掺杂碳纳米管的二硫化钨复合薄膜直径约为4厘米,并具有良好的可弯折性。As shown in FIG. 2 , the diameter of the carbon nanotube-doped tungsten disulfide composite film prepared in this example is about 4 cm, and has good bendability.
本实施例中制得掺杂碳纳米管的二硫化钨复合薄膜的扫描电镜照片,如图3所示,可以看出二硫化钨纳米片层间通过碳纳米管互相连接,且形成了部分孔洞结构。The scanning electron microscope photo of the carbon nanotube-doped tungsten disulfide composite film prepared in this example is shown in Figure 3. It can be seen that the tungsten disulfide nanosheets are connected to each other through carbon nanotubes, and some holes are formed structure.
如图6所示,最外圈曲线为本实施例中当二硫化钨与多壁碳纳米管的质量比为5:1时复合薄膜电极的循环伏安曲线,在扫速为100mV/s时,其面积比电容为9.56mF/cm2。As shown in Figure 6, the outermost curve is the cyclic voltammetry curve of the composite thin film electrode when the mass ratio of tungsten disulfide and multi-walled carbon nanotubes is 5:1 in this example, and when the scan rate is 100mV/s , its area specific capacitance is 9.56mF/cm 2 .
实施例2Example 2
参照实施例1,将步骤(3)改为在室温下取50mg剥离好的单层二硫化钨纳米片分散于100mL去离子水中,室温下超声处理30分钟得到浓度为0.5mg/mL的二硫化钨分散液将其与100mL 0.5mg/mL的多壁碳纳米管分散液进行过混合,超声处理10分钟得到体积为200mL的二硫化钨与碳纳米管的质量比为1:1的混合分散液。其余均与实施例1相同,得到掺杂碳纳米管的二硫化钨复合薄膜,用电子万能材料试验机对其进行拉断测试,当拉伸速度为20mm/min时复合薄膜在拉伸位移为0.51mm处断裂,此时对应的拉伸应力为13.1MPa。Referring to Example 1, step (3) was changed to take 50 mg of peeled single-layer tungsten disulfide nanosheets and disperse them in 100 mL of deionized water at room temperature, and ultrasonically treated for 30 minutes at room temperature to obtain disulfide with a concentration of 0.5 mg/mL. The tungsten dispersion was mixed with 100 mL of 0.5 mg/mL multi-walled carbon nanotube dispersion, and ultrasonically treated for 10 minutes to obtain a mixed dispersion with a volume of 200 mL of tungsten disulfide and carbon nanotubes with a mass ratio of 1:1. . The rest are the same as in Example 1, and the tungsten disulfide composite film doped with carbon nanotubes is obtained, which is subjected to a tensile test with an electronic universal material testing machine. When the tensile speed is 20mm/min, the composite film has a tensile displacement of The fracture occurs at 0.51mm, and the corresponding tensile stress at this time is 13.1MPa.
如图4所示,随着碳纳米管掺杂量的改变,复合薄膜的微观结构也发生了明显的变化。As shown in Figure 4, the microstructure of the composite films also changed significantly with the change of the doping amount of carbon nanotubes.
如图6所示,中间曲线为本实施例中当二硫化钨与多壁碳纳米管的质量比为1:1时复合薄膜电极的循环伏安曲线在扫速为100mV/s时,其面积比电容为10.99mF/cm2。As shown in Fig. 6, the middle curve in this example, when the mass ratio of tungsten disulfide and multi-walled carbon nanotubes is 1:1, the cyclic voltammetry curve of the composite thin film electrode when the scan rate is 100mV/s, its area The specific capacitance was 10.99 mF/cm 2 .
实施例3Example 3
参照实施例1,将步骤(2)中多壁碳纳米管改为单壁碳纳米管,其余均与实施例1相同,得到掺杂单壁碳纳米管的二硫化钨复合薄膜,用电子万能材料试验机对其进行拉断测试,当拉伸速度为20mm/min时复合薄膜在拉伸位移为0.59mm处断裂,此时对应的拉伸应力为12.4MPa。With reference to Example 1, in step (2), the multi-walled carbon nanotubes are changed to single-walled carbon nanotubes, and the rest are the same as in Example 1, and the tungsten disulfide composite film doped with single-walled carbon nanotubes is obtained. The material testing machine is used for tensile breaking test. When the tensile speed is 20 mm/min, the composite film breaks at a tensile displacement of 0.59 mm, and the corresponding tensile stress at this time is 12.4 MPa.
如图5所示,从本实施例中掺杂单壁碳纳米管的二硫化钨复合薄膜的扫描电镜照片可以看出比起掺杂多壁碳纳米管的复合薄膜,掺杂单壁碳纳米管的复合薄膜中碳纳米管紧密的包覆在二硫化钨纳米片表面,并未形成孔洞结构.As shown in Figure 5, from the scanning electron microscope photo of the tungsten disulfide composite film doped with single-walled carbon nanotubes in this example, it can be seen that compared with the composite film doped with multi-walled carbon nanotubes, the doped single-walled carbon nanotubes In the composite film of the tube, the carbon nanotubes are tightly wrapped on the surface of the tungsten disulfide nanosheets, and no pore structure is formed.
如图6所示,最内圈曲线为本实施例中当二硫化钨与单壁碳纳米管的质量比为5:1时复合薄膜电极的循环伏安曲线,在扫速为100mV/s时,其面积比电容为14.65mF/cm2。As shown in Figure 6, the innermost curve is the cyclic voltammetry curve of the composite thin film electrode when the mass ratio of tungsten disulfide and single-walled carbon nanotubes is 5:1 in this example, and when the scan rate is 100mV/s , its area specific capacitance is 14.65mF/cm 2 .
对比例Comparative ratio
将钨源与碳纳米管分别置于双温区管式炉的上风区和下风区加热,得到氧化钨/碳纳米管复合材料前驱体,其中所述上风区温度为800~1000℃,下风区温度50~150℃。将前驱体与硫粉、还原剂充分搅拌分散后进行水热反应,水热温度为180~250℃。将水热反应得到的产物经抽滤、洗涤、干燥后煅烧得到二硫化钨纳米片均匀包覆在碳纳米管的二硫化钨/碳纳米管负极复合材料煅烧温度为250~350℃。在倍率为2000mA/g时,容量在200mA h/g,100mA/g时,容量为305mA h/g。此对比例主要应用于钠离子电池领域,而本发明主要应用于柔性超级电容器领域,钠离子电池与超级电容器的性能参数不同。The tungsten source and the carbon nanotubes are respectively placed in the upwind area and the downwind area of the dual-temperature zone tube furnace for heating to obtain a tungsten oxide/carbon nanotube composite material precursor, wherein the temperature in the upwind area is 800-1000° C., and the downwind area is 800-1000°C. Temperature 50 ~ 150 ℃. After fully stirring and dispersing the precursor, sulfur powder and reducing agent, the hydrothermal reaction is carried out, and the hydrothermal temperature is 180-250°C. The product obtained by the hydrothermal reaction is filtered, washed, dried and then calcined to obtain a tungsten disulfide/carbon nanotube negative electrode composite material with tungsten disulfide nanosheets uniformly coated on carbon nanotubes. The calcination temperature is 250-350°C. When the magnification is 2000mA/g, the capacity is 200mA h/g, and when the magnification is 100mA/g, the capacity is 305mA h/g. This comparative example is mainly applied to the field of sodium ion batteries, while the present invention is mainly applied to the field of flexible supercapacitors, and the performance parameters of sodium ion batteries and supercapacitors are different.
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