CN110514314A - A kind of CMOS technology low power consumption high-precision temperature sensor - Google Patents
A kind of CMOS technology low power consumption high-precision temperature sensor Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2219/00—Thermometers with dedicated analog to digital converters
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Abstract
The invention discloses a kind of CMOS technology low power consumption high-precision temperature sensors, it include: LDO chip voltage regulator circuit, temperature sensor module, temperature dependent voltage V1 generation circuit, temperature dependent voltage V2 generation circuit, voltage comparator and logical operation module, CMOS technology low power consumption high-precision temperature sensor of the present invention can be worked with low-power consumption, to avoid because of self-heating bring measurement error, the design uses in CMOS technology device all to realize function simultaneously, can be used for the integrated chip of CMOS technology.The correction of this temperature sensor only needs to correct in chip-scale test, can to avoid system-level correction, according to this arrangement of temperature sensor can appropriate adjustment temperature measurement range, be applicable to the temperature monitoring of measurement of bldy temperature He other ranges.
Description
Technical field
The present invention relates to sensor technical field, specifically a kind of CMOS technology low power consumption high-precision temperature sensor.
Background technique
Temperature is one of the most common type index in nature, can be monitored to temperature in real life production, with person who happens to be on hand for an errand
To adjust or adapting to this temperature.The temperature range that different fields is related to is different, can in advance really according to practical application
Determine the range that temperature can reach, temperature sensor appropriate is selected according to this condition.The measurement range and essence of temperature sensor
Opposite contradiction is spent, i.e. the wider measurement accuracy of temperature range is smaller.In addition, the material of high temperature and low-temperature sensor also can area
Not, appropriate material can be selected according to measurement range.
Body temperature transducer is mostly discrete device composition at present, if it is possible to be directly integrated into inside chip, can be greatly saved
The volume and design complexities of body temperature measuring devices.It is chip function itself that body temperature transducer, which is integrated into chip to face main problem,
Consumption fever influences actual temperature measurement；Meanwhile the temperature sensor precision for being integrated into chip is also required to calibrate.
Common temperature sensor circuit discrete device as shown in Figure 1, be made of, with precision resister and thermistor structure
At unbalanced bridge, temperature level is judged by detection unbalanced bridge tap voltage difference, this voltage difference passes through again after need to amplifying
Cross ADC be converted into digital signal give system use.This temperature sensor needs to increase cost using more discrete device.In addition,
Since the inconsistency of discrete device can be obvious, cause each temperature sensor to require to do system correction, increase
System design difficulty.
Summary of the invention
The purpose of the present invention is to provide a kind of CMOS technology low power consumption high-precision temperature sensors, to solve above-mentioned background
The problem of being proposed in technology.
To achieve the above object, the invention provides the following technical scheme:
A kind of CMOS technology low power consumption high-precision temperature sensor, comprising:
LDO chip voltage regulator circuit when for fluctuating in chip voltage wide scope, exports burning voltage to temperature sensor
Power supply；
Temperature sensor module；For generating electric current relevant to temperature；
Temperature dependent voltage V1 generation circuit；For generating the voltage V1 as the one of input of voltage comparator；
Temperature dependent voltage V2 generation circuit；For generating the voltage V2 as another input of voltage comparator；
Voltage comparator；For comparing the voltage V1 of input and the voltage V2 of input；
Logical operation module；For logic calculation；And result feedback is carried out into temperature dependent voltage V1 generation circuit
Feedback regulation；
The LDO chip voltage regulator circuit connects temperature sensor module, and temperature sensor module is also respectively connected with temperature phase
Powered-down pressure V1 generation circuit is temperature dependent voltage V2 generation circuit, and temperature dependent voltage V1 generation circuit is temperature dependent voltage
V2 generation circuit is also respectively connected with two input terminals of voltage comparator, and the output end of voltage comparator connects logical operation mould
Block, the output end of logical operation module are also connected with temperature dependent voltage V1 generation circuit.
As further technical solution of the present invention: the temperature sensor module includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, MOS
The source electrode and LDO chip voltage regulator circuit of the source electrode connection metal-oxide-semiconductor M4 of pipe M3 and metal-oxide-semiconductor M4, metal-oxide-semiconductor M3, the grid of metal-oxide-semiconductor M3 connect
Connect the drain electrode of the grid, metal-oxide-semiconductor M4 of metal-oxide-semiconductor M4 and the drain electrode of metal-oxide-semiconductor M2, the grid of the grid connection metal-oxide-semiconductor M2 of metal-oxide-semiconductor M1,
The drain electrode of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M3, the source electrode ground connection of metal-oxide-semiconductor M1, the source electrode ground connection of metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and MOS
Pipe M4 mirror image obtains identical electric current, and metal-oxide-semiconductor M1 is high threshold voltage NMOS, and metal-oxide-semiconductor M2 is low threshold voltage NMOS；Pass through threshold
Value difference obtains and temperature dependent current；Metal-oxide-semiconductor M1 drain current is I1, metal-oxide-semiconductor M2 drain current is I4, the grid of metal-oxide-semiconductor M1 with
Drain potential difference is V3, and calculation formula is as follows:
Wherein(W/L)nFor the ditch road width (W) of metal-oxide-semiconductor n and the ratio of ditch road length (L), Kn is work
Skill relevant parameter, VthxFor the threshold voltage of metal-oxide-semiconductor x.
As further technical solution of the present invention: the temperature dependent voltage V1 generation circuit includes metal-oxide-semiconductor M5 and MOS
The source electrode of pipe M6, metal-oxide-semiconductor M5 connect LDO chip voltage regulator circuit, the grid of the grid connection metal-oxide-semiconductor M3 of metal-oxide-semiconductor M5, metal-oxide-semiconductor M5
Drain electrode connection metal-oxide-semiconductor M6 grid, metal-oxide-semiconductor M6 drain electrode and voltage comparator an input terminal, the source electrode of metal-oxide-semiconductor M6 connects
Ground, the drain current of metal-oxide-semiconductor M5 are I2, the drain voltage of metal-oxide-semiconductor M5 is V1, by adjusting the ratio of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M4
To adjust electric current I2Size it is as follows that formula is obtained by the dimension scale of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M4 so as to adjust the size of V1:
I2=N I1
It is possible thereby to release the expression formula of V1:
As further technical solution of the present invention: the temperature dependent voltage V2 generation circuit includes metal-oxide-semiconductor M7, MOS
The source electrode of pipe M8 and metal-oxide-semiconductor M9, metal-oxide-semiconductor M7 connect LDO chip voltage regulator circuit, the grid of the grid connection metal-oxide-semiconductor M3 of metal-oxide-semiconductor M7
Pole, the drain electrode of the grid, metal-oxide-semiconductor M8 of the drain electrode connection metal-oxide-semiconductor M8 of metal-oxide-semiconductor M7 and another input terminal of voltage comparator, MOS
The drain electrode of the grid and metal-oxide-semiconductor M9 of the source electrode connection metal-oxide-semiconductor M9 of pipe M8, the source electrode ground connection of metal-oxide-semiconductor M9, the drain electrode electricity of metal-oxide-semiconductor M7
Stream is I3, the drain voltage of metal-oxide-semiconductor M5 is V2, by adjusting this adjustable branch current of ratio of metal-oxide-semiconductor M7 and metal-oxide-semiconductor M4
It is as follows to obtain formula by the dimension scale of metal-oxide-semiconductor M7 and metal-oxide-semiconductor M4 so as to adjust the size of V2 for the size of I3:
I3=M I1
It is possible thereby to release the expression formula of V2:
As further technical solution of the present invention: the metal-oxide-semiconductor M6 and metal-oxide-semiconductor M2 is same type NMOS, threshold value phase
Together.
As further technical solution of the present invention: the metal-oxide-semiconductor M8, metal-oxide-semiconductor M9 and metal-oxide-semiconductor M2 are same type NMOS,
Its threshold value is identical.
Compared with prior art, the beneficial effects of the present invention are: CMOS technology low power consumption high-precision temperature sensing of the present invention
Device can be worked with low-power consumption, to avoid because of self-heating bring measurement error, while the design all uses CMOS technology
Middle device realizes function, can be used for the integrated chip of CMOS technology.The correction of this temperature sensor only needs to survey in chip-scale
Corrected in examination, can to avoid system-level correction, according to this arrangement of temperature sensor can appropriate adjustment temperature measurement range, can
Temperature monitoring suitable for measurement of bldy temperature and other ranges.
Detailed description of the invention
Fig. 1 is the circuit diagram of prior art master control borad circuit；
Fig. 2 is electrical schematic diagram of the invention；
Fig. 3 is error curve diagram of the temperature at 30-45 DEG C under circuit simulation state；
Fig. 4 is the circuit diagram that the present invention is a kind of voltage comparator；
Fig. 5 is logical operation module part implementation flow chart.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1: Fig. 2-5, a kind of CMOS technology low power consumption high-precision temperature sensor are please referred to, comprising:
LDO chip voltage regulator circuit when for fluctuating in chip voltage wide scope, exports burning voltage to temperature sensor
Power supply；It uses general Voltage stabilizing module, and can be avoided the variation of piece external voltage influences the precision of temperature sensor.
Temperature sensor module；For generating electric current relevant to temperature；
Temperature dependent voltage V1 generation circuit；For generating the voltage V1 as the one of input of voltage comparator；Its
Electric current can adjust by adjusting the effective dimensions of PMOS M5, and the effective dimensions of M5 can be adjusted by digital signal；
Temperature dependent voltage V2 generation circuit；For generating the voltage V2 as another input of voltage comparator；Its electricity
Stream can be adjusted by PMOS M7, by adjusting the measurement range of the adjustable temperature sensor of effective dimensions of M7
Voltage comparator；For comparing the voltage V1 of input and the voltage V2 of input；
Logical operation module；For logic calculation；And result feedback is carried out into temperature dependent voltage V1 generation circuit
Feedback regulation；
LDO chip voltage regulator circuit connects temperature sensor module, and it is mutually powered-down that temperature sensor module is also respectively connected with temperature
Pressure V1 generation circuit is temperature dependent voltage V2 generation circuit, and temperature dependent voltage V1 generation circuit is temperature dependent voltage V2 production
Raw circuit is also respectively connected with two input terminals of voltage comparator, and the output end of voltage comparator connects logical operation module, patrols
The output end for collecting computing module is also connected with temperature dependent voltage V1 generation circuit.
When chip voltage regulator circuit can fluctuate in chip voltage wide scope, exports burning voltage and supplied to temperature sensor
Electricity avoids supply voltage from introducing extra error to temperature sensing.
Metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 mirror image in temperature sensing module obtain identical electric current, and metal-oxide-semiconductor M1 is high threshold electricity
Pressing NMOS, metal-oxide-semiconductor M2 is low threshold voltage NMOS (high-low threshold value voltage is opposite high threshold and Low threshold herein), passes through threshold value
Difference obtains and temperature dependent current.Formula 1 is obtained by metal-oxide-semiconductor M1, M2 obtains formula 2.
WhereinKn is technique relevant parameter, VthxFor the threshold voltage of metal-oxide-semiconductor x.
In temperature dependent voltage V1 generation circuit, by adjusting M5 and M4 adjustable this branch current I2 of ratio it is big
It is small, so as to adjust the size of V1.By M5 and M4 dimension scale to current ratio such as formula 4, formula 5 is obtained by M6, wherein M6 with
M2 is same type NMOS, and threshold value is believed that identical.
I2=N I1 (4)
It is possible thereby to release the expression formula of V1
In temperature dependent voltage V2 generation circuit, by adjusting M7 and M4 adjustable this branch current I3 of ratio it is big
It is small, so as to adjust the size of V2.By M7 and M4 dimension scale to current ratio such as formula 7, formula 8, formula 9 are obtained by M8, M9,
Middle M8, M9 and M2 are same type NMOS, and threshold value is believed that identical.
I3=M I1 (7)
It is possible thereby to release the expression formula of V2
The purpose of voltage comparator and logical operation module is to find out D<5:0>to make V1=V2.Its principle: as V1 < V2,
Voltage comparator voltage comparator exports low level, and the output D<5:0>of logical operation module increases, until V1>V2, it is believed that this
Rollback point V1 is closest to V2.Then obtained by formula 6 and formula 10:
The relationship of N and temperature.The threshold voltage of metal-oxide-semiconductor and the relationship of temperature can simplify according to the offer of chip foundries such as formula
Shown in 12.
Vth(T)=VTh (T=0)+KTT (12)
Wherein VTh (T=0)Be temperature be 0 when metal-oxide-semiconductor threshold voltage, KTFor threshold voltage single order temperature coefficient.
N is the dimension scale of M5 and M4, there is following relationship:
Then release
It is possible thereby to obtain corresponding temperature value according to D [5:0].
By circuit simulation, average power consumption is 3.6uA (not including LDO power consumption).Temperature is in 30-45 DEG C of error such as Fig. 3 institute
Show, worst error is 0.08 DEG C, this error range can satisfy measurement of bldy temperature.
Embodiment 2: on the basis of embodiment 1, Fig. 4 gives a kind of universal circuit structure of voltage comparator, this
Invention is not limited to such comparator configuration.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (6)
1. a kind of CMOS technology low power consumption high-precision temperature sensor characterized by comprising
LDO chip voltage regulator circuit when for fluctuating in chip voltage wide scope, exporting burning voltage and supplying to temperature sensor
Electricity；
Temperature sensor module；For generating electric current relevant to temperature；
Temperature dependent voltage V1 generation circuit；For generating the voltage V1 as the one of input of voltage comparator；
Temperature dependent voltage V2 generation circuit；For generating the voltage V2 as another input of voltage comparator；
Voltage comparator；For comparing the voltage V1 of input and the voltage V2 of input；
Logical operation module；For logic calculation；And result feedback is fed back into temperature dependent voltage V1 generation circuit
It adjusts；
The LDO chip voltage regulator circuit connects temperature sensor module, and it is mutually powered-down that temperature sensor module is also respectively connected with temperature
Pressure V1 generation circuit is temperature dependent voltage V2 generation circuit, and temperature dependent voltage V1 generation circuit is temperature dependent voltage V2 production
Raw circuit is also respectively connected with two input terminals of voltage comparator, and the output end of voltage comparator connects logical operation module, patrols
The output end for collecting computing module is also connected with temperature dependent voltage V1 generation circuit.
2. a kind of CMOS technology low power consumption high-precision temperature sensor according to claim 1, which is characterized in that the temperature
Degree sensor module includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4, the source of the source electrode connection metal-oxide-semiconductor M4 of metal-oxide-semiconductor M3
Pole and LDO chip voltage regulator circuit, the drain electrode of the grid, metal-oxide-semiconductor M4 of the grid connection metal-oxide-semiconductor M4 of metal-oxide-semiconductor M3 and the leakage of metal-oxide-semiconductor M2
Pole, the drain electrode of the grid, metal-oxide-semiconductor M1 of the grid connection metal-oxide-semiconductor M2 of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M3, the source electrode of metal-oxide-semiconductor M1
Ground connection, the source electrode ground connection of metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 mirror image obtain identical electric current, and metal-oxide-semiconductor M1 is high threshold voltage
NMOS, metal-oxide-semiconductor M2 are low threshold voltage NMOS；It is obtained by threshold difference and temperature dependent current；Metal-oxide-semiconductor M1 drain current is
I1, metal-oxide-semiconductor M2 drain current is I4, the grid and drain potential difference of metal-oxide-semiconductor M1 is V3, and calculation formula is as follows:
Wherein(W/L)nFor the ditch road width (W) of metal-oxide-semiconductor n and the ratio of ditch road length (L), Kn is that technique is related
Parameter, VthxFor the threshold voltage of metal-oxide-semiconductor x.
3. a kind of CMOS technology low power consumption high-precision temperature sensor according to claim 2, which is characterized in that the temperature
Degree associated voltage V1 generation circuit includes metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6, and the source electrode of metal-oxide-semiconductor M5 connects LDO chip voltage regulator circuit, MOS
The grid of the grid connection metal-oxide-semiconductor M3 of pipe M5, the drain electrode of the grid, metal-oxide-semiconductor M6 of the drain electrode connection metal-oxide-semiconductor M6 of metal-oxide-semiconductor M5 and electricity
An input terminal of comparator is pressed, the source electrode ground connection of metal-oxide-semiconductor M6, the drain current of metal-oxide-semiconductor M5 is I2, the drain electrode electricity of metal-oxide-semiconductor M5
Pressure is V1, adjusts electric current I by adjusting the ratio of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M42Size, so as to adjust the size of V1, by
It is as follows that the dimension scale of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M4 obtains formula:
I2=NI1；
It is possible thereby to release the expression formula of V1:
4. a kind of CMOS technology low power consumption high-precision temperature sensor according to claim 3, which is characterized in that the temperature
Degree associated voltage V2 generation circuit includes metal-oxide-semiconductor M7, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9, and the source electrode of metal-oxide-semiconductor M7 connects the pressure stabilizing of LDO chip
Circuit, the grid of the grid connection metal-oxide-semiconductor M3 of metal-oxide-semiconductor M7, the grid, metal-oxide-semiconductor M8 for connecting metal-oxide-semiconductor M8 that drain of metal-oxide-semiconductor M7
Another input terminal of drain electrode and voltage comparator, the drain electrode of the grid and metal-oxide-semiconductor M9 of the source electrode connection metal-oxide-semiconductor M9 of metal-oxide-semiconductor M8,
The source electrode of metal-oxide-semiconductor M9 is grounded, and the drain current of metal-oxide-semiconductor M7 is I3, the drain voltage of metal-oxide-semiconductor M5 is V2, by adjusting metal-oxide-semiconductor M7
With the size of adjustable this branch current I3 of the ratio of metal-oxide-semiconductor M4, so as to adjust the size of V2, by metal-oxide-semiconductor M7 and metal-oxide-semiconductor M4
Dimension scale to obtain formula as follows:
I3=MI1
It is possible thereby to release the expression formula of V2:
5. a kind of CMOS technology low power consumption high-precision temperature sensor according to claim 3, which is characterized in that described
Metal-oxide-semiconductor M6 and metal-oxide-semiconductor M2 is same type NMOS, and threshold value is identical.
6. a kind of CMOS technology low power consumption high-precision temperature sensor according to claim 4, which is characterized in that described
Metal-oxide-semiconductor M8, metal-oxide-semiconductor M9 and metal-oxide-semiconductor M2 are same type NMOS, and threshold value is identical.
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| CN114690843A (en) * | 2022-02-21 | 2022-07-01 | 电子科技大学 | A low power consumption MOS tube temperature sensor circuit |
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