CN110511748A - A kind of preparation method of fluorescent boron carbide nanobelt - Google Patents
A kind of preparation method of fluorescent boron carbide nanobelt Download PDFInfo
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Abstract
本发明公开了一种荧光碳化硼纳米带的制备方法,以纯度不低于98%的氧化镍或硝酸镍粉、硼粉、二氧化硅粉和三氧化二硼粉为原料,按照反应方程式2xNiO+xSiO2+(4x+2y)B+2yB2O3=xNi2Si+(2x+3y)B2O2,0.01<x/y<0.15称量,将称量好的原料均匀混合于无水乙醇中,加热搅拌至干燥;将干燥后的混合物置于带盖的石墨坩埚内,放入高温管式炉中,在惰性保护气氛下进行热处理,随炉降温后在石墨坩埚壁及盖上收集灰白色的毛绒状粉末为荧光碳化硼纳米带。本发明具有原料简单易得、操作简单可控、可重复性好、样品纯度高等优点。
The invention discloses a method for preparing a fluorescent boron carbide nanobelt, using nickel oxide or nickel nitrate powder, boron powder, silicon dioxide powder and boron trioxide powder with a purity of not less than 98% as raw materials, according to the reaction equation 2xNiO +xSiO 2 +(4x+2y)B+2yB 2 O 3 =xNi 2 Si+(2x+3y)B 2 O 2 , weigh 0.01<x/y<0.15, mix the weighed raw materials evenly in anhydrous In ethanol, heat and stir until dry; put the dried mixture in a graphite crucible with a cover, put it into a high-temperature tube furnace, conduct heat treatment under an inert protective atmosphere, and collect it on the graphite crucible wall and cover after cooling down with the furnace The off-white fluffy powder is fluorescent boron carbide nanoribbons. The invention has the advantages of simple and easy-to-obtain raw materials, simple and controllable operation, good repeatability, high sample purity and the like.
Description
技术领域technical field
本发明属于LED荧光粉和纳米材料的制备技术领域,具体涉及一种荧光碳化硼纳米带的制备方法。The invention belongs to the technical field of preparation of LED fluorescent powder and nanometer materials, and in particular relates to a method for preparing fluorescent boron carbide nanobelts.
背景技术Background technique
2001年,美国佐治亚理工学院的王中林教授等在世界上首次发现并合成纳米带状结构的半导体氧化物,这是纳米材料合成领域的又一重大突破。王中林教授等人利用高温固体气相法,成功合成了氧化锌、氧化锡、氧化铟、氧化镉和氧化镓等宽带半导体体系的带状结构。这些带状结构纯度高、产量大、结构完整、表面干净,并且内部无缺陷、无位错,是理想的单晶线型薄片结构,从而引起人们的广泛关注。In 2001, Professor Wang Zhonglin of the Georgia Institute of Technology and others discovered and synthesized semiconductor oxides with a nanoribbon structure for the first time in the world, which was another major breakthrough in the field of nanomaterial synthesis. Professor Wang Zhonglin and others successfully synthesized band structures of broadband semiconductor systems such as zinc oxide, tin oxide, indium oxide, cadmium oxide, and gallium oxide by high-temperature solid gas phase method. These ribbon structures have high purity, large yield, complete structure, clean surface, and no defects or dislocations inside. They are ideal single-crystal linear thin-sheet structures, which have attracted widespread attention.
碳化硼因其良好的机械性、耐热、耐高温、抗腐蚀等特性,被广泛应用在高温高压等极端环境下。一维碳化硼由于其具有较强的量子尺寸效应,常常表现出比传统块体材料更好的力学、光学及电学性能,在构造纳米器件方面也具有很好的应用前景,受到了极大关注。利用基于第一性原理的密度泛函理论(DFT),Sun等人首先开展了对一维碳化硅纳米条带的理论研究,对边缘用氢钝化的锯齿型碳化硅纳米带和扶手椅型碳化硅纳米带的结构、性质及其稳定性进行研究。结果显示,扶手型碳化硅纳米带为非磁性半导体性质,而锯齿型碳化硅纳米带则因条带宽度不同表现出具有磁性的金属性质或半导体性质。研究表明,通过掺杂可以调节碳化硅纳米带的电磁学性质。如单个硼原子或氮原子替换指定原子的锯齿型碳化硅纳米带可以实现100%的自旋极化并获得半金属性质。当硼或氮原子掺杂位置改变时,可实现体系由铁磁态到亚铁磁态的转变,并获得金属、半金属及半导体行为等有趣的性质。然而,国内外对碳化硼纳米带的制备的报道仍较少,Xu等人利用B2O3和石墨筛为原料,高频感应炉中加热至1950℃后在BN衬底上得到了碳化硼纳米带(J.Phys.Chem.B,2004,108,7651-7655.);Bao等人利用B2O3粉、硼粉、碳粉以及铁粉,通过两步化学气相沉积方法在硅基片上得到了碳化硼纳米带(Chinese Physics B,2008,17,11,4247-4252.)。目前已报道的制备方法比较复杂,对设备的要求高,重复性差,且制备得到的碳化硼纳米带数量较少、纯度较低,不利于更进一步的研究与利用,因此开发一种新型简单有效的碳化硼纳米带制备方法具有十分重要的意义。Boron carbide is widely used in extreme environments such as high temperature and high pressure because of its good mechanical properties, heat resistance, high temperature resistance, and corrosion resistance. Due to its strong quantum size effect, one-dimensional boron carbide often exhibits better mechanical, optical, and electrical properties than traditional bulk materials. It also has good application prospects in the construction of nano-devices and has received great attention. . Using density functional theory (DFT) based on first principles, Sun et al. first carried out a theoretical study on one-dimensional silicon carbide nanoribbons, zigzag silicon carbide nanoribbons and armchair-shaped silicon carbide nanoribbons passivated with hydrogen at the edges The structure, properties and stability of silicon carbide nanobelts were studied. The results show that the armrest-shaped SiC nanoribbons are non-magnetic and semiconducting, while the zigzag SiC nanoribbons exhibit magnetic metallic or semiconducting properties due to different strip widths. Studies have shown that the electromagnetic properties of silicon carbide nanoribbons can be tuned by doping. For example, zigzag silicon carbide nanobelts with single boron or nitrogen atoms replacing designated atoms can achieve 100% spin polarization and obtain half-metallic properties. When the doping position of boron or nitrogen atoms is changed, the system can be transformed from ferromagnetic state to ferrimagnetic state, and interesting properties such as metal, semimetal and semiconductor behavior can be obtained. However, there are still few reports on the preparation of boron carbide nanobelts at home and abroad. Xu et al. used B 2 O 3 and graphite sieve as raw materials, and obtained boron carbide on BN substrate after heating to 1950°C in a high-frequency induction furnace. Nanobelts (J.Phys.Chem.B, 2004, 108, 7651-7655.); Bao et al. used B 2 O 3 powder, boron powder, carbon powder and iron powder to form a silicon substrate by two-step chemical vapor deposition. On-chip boron carbide nanobelts were obtained (Chinese Physics B, 2008, 17, 11, 4247-4252.). The preparation methods reported so far are relatively complicated, have high requirements for equipment, and poor repeatability, and the number of boron carbide nanobelts prepared is small and the purity is low, which is not conducive to further research and utilization. Therefore, the development of a new type is simple and effective. The preparation method of boron carbide nanobelts is of great significance.
发明内容Contents of the invention
本发明的目的是提供一种制备过程简单、产量高、样品纯度高的荧光碳化硼纳米带的制备方法。The purpose of the present invention is to provide a method for preparing fluorescent boron carbide nanobelts with simple preparation process, high yield and high sample purity.
本发明的荧光碳化硼纳米带的制备方法为:以氧化镍或硝酸镍粉、硼粉、二氧化硅粉和三氧化二硼粉为原料,根据反应方程式2xNiO+xSiO2+(4x+2y)B+2yB2O3=xNi2Si+(2x+3y)B2O2,其中0.01≤x/y≤0.15,按摩尔比称取原料,将称量好的原料均匀混合于无水乙醇中,加热搅拌至干燥;然后将干燥后的混合物置于带盖的石墨坩埚内,放入高温管式炉中,在惰性保护气氛下加热至1350~1600℃,热处理1~5小时,随炉降温后在石墨坩埚壁及盖上收集灰白色的毛绒状粉末,得到荧光碳化硼纳米带。The preparation method of the fluorescent boron carbide nanobelt of the present invention is: using nickel oxide or nickel nitrate powder, boron powder, silicon dioxide powder and boron trioxide powder as raw materials, according to the reaction equation 2xNiO+xSiO 2 +(4x+2y) B+2yB 2 O 3 =xNi 2 Si+(2x+3y)B 2 O 2 , where 0.01≤x/y≤0.15, the raw materials are weighed according to the molar ratio, and the weighed raw materials are evenly mixed in absolute ethanol, Heat and stir until dry; then put the dried mixture in a graphite crucible with a cover, put it into a high-temperature tube furnace, heat it to 1350-1600°C under an inert protective atmosphere, heat it for 1-5 hours, and cool it down with the furnace Collect off-white fluffy powder on the wall and cover of the graphite crucible to obtain fluorescent boron carbide nanobelts.
上述的氧化镍或硝酸镍粉、硼粉、三氧化二硼粉、二氧化硅粉的纯度均不低于98%。The purity of the above-mentioned nickel oxide or nickel nitrate powder, boron powder, diboron trioxide powder and silicon dioxide powder is not less than 98%.
上述制备方法中,优选0.05≤x/y≤0.1。In the above preparation method, preferably 0.05≤x/y≤0.1.
上述制备方法中,将称量好的原料均匀混合于无水乙醇中,在50~90℃下加热搅拌至干燥。In the above preparation method, the weighed raw materials are uniformly mixed in absolute ethanol, heated and stirred at 50-90° C. until dry.
上述制备方法中,优选在惰性保护气氛下加热至1400~1500℃,热处理1~3小时。In the above preparation method, it is preferred to heat to 1400-1500° C. under an inert protective atmosphere, and heat-treat for 1-3 hours.
上述制备方法中,所述惰性保护气氛是流速为80~200mL/min的氩气气氛。In the above preparation method, the inert protective atmosphere is an argon atmosphere with a flow rate of 80-200mL/min.
本发明以氧化镍或硝酸镍粉、硼粉、二氧化硅粉和三氧化二硼粉为原料,将原料在石墨坩埚内高温热处理,在石墨坩埚壁及盖上收集灰白色的毛绒状粉末为荧光碳化硼纳米带。本发明的有益效果如下:In the present invention, nickel oxide or nickel nitrate powder, boron powder, silicon dioxide powder and boron trioxide powder are used as raw materials, and the raw materials are heat-treated at high temperature in a graphite crucible, and the off-white fluffy powder is collected on the graphite crucible wall and cover. Fluorescent boron carbide nanoribbons. The beneficial effects of the present invention are as follows:
1、本发明所用原料价格便宜、易得,制备工艺简单,可重复性好,容易实现。1. The raw materials used in the present invention are cheap and easy to obtain, the preparation process is simple, the repeatability is good, and it is easy to realize.
2、本发明所制备荧光碳化硼纳米带结晶度好、纯度高、形貌规则、尺寸均匀。2. The fluorescent boron carbide nanobelt prepared by the present invention has good crystallinity, high purity, regular shape and uniform size.
3、本发明所制备荧光碳化硼纳米带具有良好的发光性能。3. The fluorescent boron carbide nanobelts prepared in the present invention have good luminescent properties.
附图说明Description of drawings
图1是实施例1制备的荧光碳化硼纳米带的拉曼图谱。Fig. 1 is the Raman spectrum of the fluorescent boron carbide nanobelt prepared in Example 1.
图2是实施例1制备的荧光碳化硼纳米带的SEM图。Fig. 2 is the SEM image of the fluorescent boron carbide nanobelt prepared in Example 1.
图3是实施例1制备的荧光碳化硼纳米带的PL光谱。Fig. 3 is the PL spectrum of the fluorescent boron carbide nanobelt prepared in Example 1.
图4是实施例2制备的荧光碳化硼纳米带的SEM图。Fig. 4 is the SEM image of the fluorescent boron carbide nanobelt prepared in Example 2.
图5是实施例2制备的荧光碳化硼纳米带的PL光谱。Fig. 5 is the PL spectrum of the fluorescent boron carbide nanobelt prepared in Example 2.
具体实施方式Detailed ways
下面结合附图和实施例对本发明进一步详细说明,但本发明的保护范围不仅限于这些实施例。The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but the protection scope of the present invention is not limited to these embodiments.
实施例1Example 1
将0.0747g(1mmol)纯度大于98%的氧化镍、0.1297g(12mmol)纯度大于98%的硼粉、0.0300g(0.5mmol)纯度大于98%的二氧化硅粉、0.6960g(10mmol)纯度大于98%的三氧化二硼粉依次加入20mL无水乙醇中,在90℃水浴中加热搅拌直至干燥。将干燥后的混合粉体置于带盖的石墨坩埚内,将石墨坩埚置于高温管式炉中,在流速为120mL/min的氩气气氛中加热至1500℃,恒温热处理1小时,随炉降温后在石墨坩埚壁及盖上收集灰白色的毛绒状粉末,得到荧光碳化硼纳米带。由图1可见,所得产物为碳化硼。由图2可见,所得碳化硼纳米带的宽度为1~3μm,长度为数十至数百微米,且分布均匀。由图3可见,所得碳化硼纳米带的激发光谱覆盖了400~500nm,发射峰位于处436nm处,说明材料能够发射紫外光。0.0747g (1mmol) nickel oxide with a purity greater than 98%, 0.1297g (12mmol) boron powder with a purity greater than 98%, 0.0300g (0.5mmol) silica powder with a purity greater than 98%, 0.6960g (10mmol) with a purity greater than 98% Add 98% boron trioxide powder to 20 mL of absolute ethanol in turn, heat and stir in a water bath at 90°C until dry. Put the dried mixed powder in a graphite crucible with a cover, place the graphite crucible in a high-temperature tube furnace, heat it to 1500°C in an argon atmosphere with a flow rate of 120mL/min, and heat it at a constant temperature for 1 hour. After cooling down, off-white fluffy powder is collected on the graphite crucible wall and cover to obtain fluorescent boron carbide nanobelts. As can be seen from Figure 1, the resulting product is boron carbide. It can be seen from Fig. 2 that the obtained boron carbide nanoribbons have a width of 1-3 μm, a length of tens to hundreds of microns, and uniform distribution. It can be seen from Fig. 3 that the excitation spectrum of the obtained boron carbide nanobelt covers 400-500 nm, and the emission peak is located at 436 nm, indicating that the material can emit ultraviolet light.
实施例2Example 2
将0.0896g(1.2mmol)纯度大于98%的氧化镍、0.1340g(12.4mmol)纯度大于98%的硼粉、0.0360g(0.6mmol)纯度大于98%的二氧化硅粉、0.6960g(10mmol)纯度大于98%的三氧化二硼粉依次加入15mL无水乙醇中,在70℃水浴中加热搅拌直至干燥。将干燥后的混合粉体置于带盖的石墨坩埚内,将石墨坩埚置于高温管式炉中,在流速为120mL/min的氩气气氛中加热至1500℃,恒温热处理1小时,随炉降温后在石墨坩埚壁及盖上收集灰白色的毛绒状粉末,得到荧光碳化硼纳米带。由图4可见,所得荧光碳化硼纳米带的宽度为1~10μm,长度为50μm至数百微米,且分布均匀。由图5可见,所得碳化硼纳米带的激发光谱覆盖了400~500nm,发射峰位于处436nm处,说明说明材料能够发射紫外光。0.0896g (1.2mmol) nickel oxide with a purity greater than 98%, 0.1340g (12.4mmol) boron powder with a purity greater than 98%, 0.0360g (0.6mmol) silica powder with a purity greater than 98%, 0.6960g (10mmol) Diboron trioxide powder with a purity greater than 98% was sequentially added to 15 mL of absolute ethanol, heated and stirred in a water bath at 70° C. until dry. Put the dried mixed powder in a graphite crucible with a cover, place the graphite crucible in a high-temperature tube furnace, heat it to 1500°C in an argon atmosphere with a flow rate of 120mL/min, and heat it at a constant temperature for 1 hour. After cooling down, off-white fluffy powder is collected on the graphite crucible wall and cover to obtain fluorescent boron carbide nanobelts. It can be seen from FIG. 4 that the obtained fluorescent boron carbide nanoribbons have a width of 1-10 μm, a length of 50 μm to hundreds of microns, and uniform distribution. It can be seen from Fig. 5 that the excitation spectrum of the obtained boron carbide nanobelt covers 400-500 nm, and the emission peak is located at 436 nm, indicating that the material can emit ultraviolet light.
实施例3Example 3
将0.2326g(0.8mmol)六水硝酸镍、0.1362g(12.6mmol)硼粉、0.0240g(0.4mmol)二氧化硅粉、0.7656g(11mmol)三氧化二硼粉依次加入25mL无水乙醇中,在80℃水浴中加热搅拌直至干燥。将干燥后的混合粉体置于带盖的石墨坩埚内,将石墨坩埚置于高温管式炉中,在流速为150mL/min的氩气气氛中加热至1450℃,恒温热处理3小时,随炉降温后在石墨坩埚壁及盖上收集灰白色的毛绒状粉末,得到荧光碳化硼纳米带。Add 0.2326g (0.8mmol) nickel nitrate hexahydrate, 0.1362g (12.6mmol) boron powder, 0.0240g (0.4mmol) silicon dioxide powder, 0.7656g (11mmol) boron trioxide powder to 25mL absolute ethanol in sequence, Heat and stir in a water bath at 80°C until dry. Put the dried mixed powder in a graphite crucible with a cover, place the graphite crucible in a high-temperature tube furnace, heat it to 1450°C in an argon atmosphere with a flow rate of 150mL/min, and heat it at a constant temperature for 3 hours. After cooling down, off-white fluffy powder is collected on the graphite crucible wall and cover to obtain fluorescent boron carbide nanobelts.
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