CN110509114A - A grinding and polishing method for tungsten alloy - Google Patents
A grinding and polishing method for tungsten alloy Download PDFInfo
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- CN110509114A CN110509114A CN201910748593.2A CN201910748593A CN110509114A CN 110509114 A CN110509114 A CN 110509114A CN 201910748593 A CN201910748593 A CN 201910748593A CN 110509114 A CN110509114 A CN 110509114A
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- 238000005498 polishing Methods 0.000 title claims abstract description 78
- 238000000227 grinding Methods 0.000 title claims abstract description 64
- 229910001080 W alloy Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010432 diamond Substances 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000006061 abrasive grain Substances 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000003082 abrasive agent Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000011435 rock Substances 0.000 claims 2
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 abstract description 8
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 7
- 230000003746 surface roughness Effects 0.000 abstract description 4
- 229910001092 metal group alloy Inorganic materials 0.000 abstract description 3
- -1 PH regulator Chemical compound 0.000 abstract 1
- 238000005520 cutting process Methods 0.000 description 6
- 238000003754 machining Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000007514 turning Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005474 detonation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000009688 liquid atomisation Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
一种钨合金的研磨抛光方法,属于金属合金的超精密加工技术领域。具体步骤为:(1)粗研:选用去离子水为研磨液,抛光液流量设置为6~12ml/min,选用粒径20~50μm的金刚石固结磨粒研磨垫研磨,研磨加工时间设置为20~40min。(2)精研:金刚石磨料粒径为5~20μm,加工时间设置为40~60min,其余加工参数与粗研相同。(3)抛光:抛光液含有硅溶胶、PH调节剂、去离子水,硅溶胶磨料的体积分数为10~25%,PH值为2~5;抛光液流量设置为4~6ml/min,研磨压力设置为20‑40kpa,研磨加工时间设置为1.5~2.5h。整个研磨抛光工艺加工时间低于5h,且抛光后的钨合金表面的粗糙度Ra小于10nm,可满足实际加工领域的精度要求,实现了钨合金的超精密加工。
The invention discloses a grinding and polishing method for tungsten alloy, which belongs to the technical field of ultra-precision processing of metal alloys. The specific steps are: (1) Rough grinding: select deionized water as the grinding fluid, set the flow rate of the polishing fluid to 6-12ml/min, select a diamond-bonded abrasive pad with a particle size of 20-50 μm for grinding, and set the grinding processing time to 20-40min. (2) Fine grinding: the particle size of the diamond abrasive is 5-20 μm, the processing time is set to 40-60 min, and the rest of the processing parameters are the same as the rough grinding. (3) Polishing: The polishing liquid contains silica sol, PH regulator, deionized water, the volume fraction of silica sol abrasive is 10-25%, and the pH value is 2-5; the flow rate of the polishing liquid is set at 4-6ml/min, and the grinding The pressure is set to 20-40kpa, and the grinding processing time is set to 1.5-2.5h. The processing time of the whole grinding and polishing process is less than 5 hours, and the surface roughness Ra of the polished tungsten alloy is less than 10nm, which can meet the precision requirements in the actual processing field and realize the ultra-precision processing of tungsten alloy.
Description
技术领域technical field
本发明属于金属合金的超精密加工技术领域,涉及金属合金研磨和抛光的超精密加工方法,特别涉及一种钨合金研磨及超精密抛光方法。The invention belongs to the technical field of ultra-precision machining of metal alloys, and relates to an ultra-precision machining method for metal alloy grinding and polishing, in particular to a tungsten alloy grinding and ultra-precision polishing method.
背景技术Background technique
钨合金是以硬质钨为主导相,以镍、铁、铜、钴等较软金属为基体相的合金。钨合金由于其特殊的材料结构,不仅具有高密度、高强度、优异的热性能、优异的耐腐蚀和耐辐射性能,而且比纯钨具有更好的延展性和可加工性。由于其良好的综合性能,钨合金在超精密加工领域应用逐渐引起了人们的关注。在航空航天领域,钨合金主要用于制造陀螺仪转子、减震器、配重天平等,高精度的加工质量有利于保证零部件使用稳定性。在军工领域,作为一种优秀的屏蔽γ-ray和其他辐射的射线材料,钨合金已广泛应用于生产放射性源容器、准直仪、医疗盾牌和核盾牌等精密部件。与此同时,钨合金作为散裂源、核能、冲击爆震物理实验等精密物理实验中的靶材或关键部件,具有良好的表面质量有利于提高实验结果的准确性。因此,钨合金表面研磨抛光技术至关重要。Tungsten alloy is an alloy with hard tungsten as the dominant phase and softer metals such as nickel, iron, copper, and cobalt as the matrix phase. Due to its special material structure, tungsten alloy not only has high density, high strength, excellent thermal properties, excellent corrosion resistance and radiation resistance, but also has better ductility and machinability than pure tungsten. Due to its good comprehensive properties, the application of tungsten alloy in the field of ultra-precision machining has gradually attracted people's attention. In the field of aerospace, tungsten alloys are mainly used to manufacture gyroscope rotors, shock absorbers, counterweight balances, etc. High-precision processing quality is conducive to ensuring the stability of parts. In the field of military industry, as an excellent material for shielding γ-ray and other radiation, tungsten alloy has been widely used in the production of precision components such as radioactive source containers, collimators, medical shields and nuclear shields. At the same time, tungsten alloys are used as targets or key components in precision physical experiments such as spallation sources, nuclear energy, and shock detonation physical experiments. Good surface quality is conducive to improving the accuracy of experimental results. Therefore, the surface grinding and polishing technology of tungsten alloy is very important.
然而关于钨合金研磨抛光工艺的发明专利较少,目前尚未形成一套成熟规范的工艺标准。目前针对钨合金的加工手段,仍然以传统的车削加工为主。但是由于钨合金硬度高、脆性大、弹性变形大,在加工过程中产生较大的切削力和较高的切削温度,导致刀具磨损严重,加工困难。针对以上存在的问题,一些研究人员在刀具和技工工艺上进行了研究,通过引入辅助加工技术和更换耐磨刀具对车削钨合金工艺进行了改进,如超声辅助干车削法、椭圆振动切削法、基于气液雾化冷却的超声振动切削法等。虽然上述改进方法取得了一定的成效,但是加工表面质量和精度仍然难以满足超精密加工的要求。考虑到研磨抛光工艺目前是各种固体材料加工实现尺寸精密、形状超准确、表面粗糙度极低的主要手段,亟需提出一套针对钨合金的研磨抛光工艺。However, there are few invention patents on the tungsten alloy grinding and polishing process, and a set of mature and standardized process standards has not yet been formed. At present, the processing method for tungsten alloy is still dominated by traditional turning. However, due to the high hardness, high brittleness, and large elastic deformation of tungsten alloys, large cutting forces and high cutting temperatures are generated during processing, resulting in severe tool wear and difficult processing. In response to the above problems, some researchers have conducted research on cutting tools and crafting techniques, and have improved the turning tungsten alloy process by introducing auxiliary processing technology and replacing wear-resistant cutting tools, such as ultrasonic assisted dry turning, elliptical vibration cutting method, Ultrasonic vibration cutting method based on gas-liquid atomization cooling, etc. Although the above improved methods have achieved certain results, the quality and precision of the machined surface are still difficult to meet the requirements of ultra-precision machining. Considering that the grinding and polishing process is currently the main means for processing various solid materials to achieve precise dimensions, ultra-accurate shapes, and extremely low surface roughness, it is urgent to propose a grinding and polishing process for tungsten alloys.
发明内容Contents of the invention
为了克服上述现有技术的不足,并为今后的钨合金的精密加工提供参考,本发明的目的在于提供一种钨合金的研磨抛光方法,能够快速有效地使得钨合金在微观上的表面粗糙度达到10nm以下的镜面水平,并且表面无明显肉眼可测的划痕。In order to overcome the shortcomings of the above-mentioned prior art and provide a reference for the precision machining of tungsten alloys in the future, the purpose of the present invention is to provide a grinding and polishing method for tungsten alloys, which can quickly and effectively make the surface roughness of tungsten alloys microscopically Reach the mirror level below 10nm, and there are no obvious scratches on the surface that can be measured by naked eyes.
为了实现上述目的,本发明采用的技术方案是:In order to achieve the above object, the technical scheme adopted in the present invention is:
一种钨合金的研磨抛光方法,基于钨合金的研磨抛光装置实现,首先将钨合金样件3用石蜡粘接在圆盘夹具4上,研磨/抛光垫2粘接在不锈钢工作台1上,不锈钢工作台1由步进电机驱动。加工过程中不锈钢工作台1和样件3各自绕轴旋转。抛光液装置安装在研磨/抛光垫2上方,研磨抛光过程中,抛光液6滴落在研磨/抛光垫2上,实现对研磨抛光的辅助加工。所述研磨抛光方法包括研磨液的配置、研磨抛光参数的选取及研磨抛光垫的选择等,具体步骤为:A grinding and polishing method for tungsten alloys is implemented based on a grinding and polishing device for tungsten alloys. First, a tungsten alloy sample 3 is bonded to a disc fixture 4 with paraffin, and a grinding/polishing pad 2 is bonded to a stainless steel workbench 1. The stainless steel workbench 1 is driven by a stepping motor. During the processing, the stainless steel workbench 1 and the sample 3 rotate around their respective axes. The polishing liquid device is installed above the grinding/polishing pad 2. During the grinding and polishing process, the polishing liquid 6 drops on the grinding/polishing pad 2 to realize auxiliary processing for grinding and polishing. The grinding and polishing method includes the configuration of the grinding liquid, the selection of the grinding and polishing parameters and the selection of the grinding and polishing pad, and the specific steps are:
1)粗研(中性抛光液)1) Rough grinding (neutral polishing liquid)
研磨液为去离子水,抛光液流量设置为6~12ml/min。固结磨料研磨,磨料选用金刚石磨粒,磨料的粒径为20~50μm,研磨垫选用经金刚石固结磨粒研磨垫。加工盘转速设置为60~120rmp,工件转速设置为50~110rmp,通过增加配重盘或砝码的方式设置研磨压力为40~80kpa。加工时间设置为20~40min。粗研完成后用水清洗工件表面,并用气枪吹干。The grinding fluid is deionized water, and the flow rate of the polishing fluid is set at 6-12ml/min. Consolidated abrasive grinding, the abrasive is made of diamond abrasive grains, the particle size of the abrasive is 20-50 μm, and the grinding pad is made of diamond-consolidated abrasive grains. The speed of the processing disc is set to 60-120rmp, the speed of the workpiece is set to 50-110rmp, and the grinding pressure is set to 40-80kpa by adding a counterweight or weight. The processing time is set at 20-40min. After rough grinding, wash the surface of the workpiece with water and dry it with an air gun.
2)精研(中性抛光液)2) Fine grinding (neutral polishing liquid)
精研的金刚石磨料粒径为5~20μm,加工时间设置为40~60min,其他参数设置(如抛光液流量,加工盘和工件转速等)均与粗研过程相同。精研完成后用水清洗工件表面,并用气枪吹干。The particle size of the finely ground diamond abrasive is 5-20 μm, the processing time is set at 40-60 minutes, and other parameter settings (such as the flow rate of the polishing liquid, the speed of the processing disc and the workpiece, etc.) are the same as the rough grinding process. After lapping, wash the surface of the workpiece with water and dry it with an air gun.
3)配置混合抛光液3) Configure mixed polishing liquid
混合抛光液包括PH调节剂、硅溶胶溶液和去离子水,混合后的溶液保证PH值2~5,硅溶胶的浓度设置在10~25vol.%。所述PH调节剂为柠檬酸晶体、苹果酸晶体、磷酸溶液中的一种或两种以上混合;所述硅溶胶溶液中含有磨粒粒径为65~80nm的二氧化硅磨粒。The mixed polishing solution includes a pH regulator, a silica sol solution and deionized water, the mixed solution is guaranteed to have a pH value of 2-5, and the concentration of the silica sol is set at 10-25 vol.%. The pH regulator is one or more of citric acid crystals, malic acid crystals, and phosphoric acid solutions; the silica sol solution contains silicon dioxide abrasive grains with an abrasive grain diameter of 65-80 nm.
4)抛光(酸性抛光液)4) Polishing (acid polishing solution)
将步骤3)配置的抛光液滴落在抛光垫上,抛光液流量设置为4~6ml/min。游离磨料抛光,磨料选用粒径为65~80nm的二氧化硅磨粒,抛光垫选用IC 1000/SubaⅣ。加工盘转速设置为50~80rmp,工件转速设置为40~70rmp,通过增加配重盘或砝码的方式设置研磨压力为20~40kpa。加工时间设置为1.5-2.5h。抛光完成后用水清洗工件表面,并用气枪吹干,抛光后的钨合金表面的粗糙度Ra小于10nm。The polishing liquid prepared in step 3) is dropped on the polishing pad, and the flow rate of the polishing liquid is set at 4-6 ml/min. For free abrasive polishing, use silicon dioxide abrasive grains with a particle size of 65-80nm as the abrasive, and use IC 1000/SubaⅣ as the polishing pad. The processing disc speed is set to 50-80rmp, the workpiece speed is set to 40-70rmp, and the grinding pressure is set to 20-40kpa by adding a counterweight plate or weight. The processing time is set to 1.5-2.5h. After polishing, wash the surface of the workpiece with water and dry it with an air gun. The roughness Ra of the polished tungsten alloy surface is less than 10nm.
本发明的有益效果是:通过应用简单的装置,实现了钨合金自动研磨及抛光方法,抛光后的钨合金表面的粗糙度Ra小于10nm。整个研磨抛光工艺加工时间低于5h,可满足实际加工领域的精度要求,实现了钨合金的超精密加工。The beneficial effect of the present invention is: the tungsten alloy automatic grinding and polishing method is realized by using a simple device, and the surface roughness Ra of the polished tungsten alloy is less than 10nm. The processing time of the entire grinding and polishing process is less than 5 hours, which can meet the precision requirements in the actual processing field and realize the ultra-precision processing of tungsten alloys.
附图说明Description of drawings
图1为研磨抛光工艺的加工原理图;Fig. 1 is the processing schematic diagram of grinding and polishing process;
图2为研磨抛光工艺的流程图。Fig. 2 is a flow chart of the grinding and polishing process.
图中:1不锈钢工作台;2研磨/抛光垫;3钨合金样件;4圆盘夹具;5配重盘;6抛光液。In the figure: 1 stainless steel workbench; 2 grinding/polishing pad; 3 tungsten alloy sample; 4 disc fixture; 5 counterweight plate; 6 polishing liquid.
具体实施方式Detailed ways
以下结合技术方案详细叙述本发明的具体实施方式。The specific implementation manner of the present invention will be described in detail below in conjunction with the technical solutions.
钨合金样件3选用95W-3.5Ni-1.5Fe合金,它是由平均直径分别为2.5μm、2.5μm,、3.5μm的还原钨、羰基镍和羰基铁粉末烧结制成的,加工尺寸为Φ15×7mm3。用石蜡将3块钨合金样件3均匀的粘接直径为Φ100mm的夹具4圆周,用配种盘5进行样件3压力加载。将研磨垫2粘接在研磨抛光机的不锈钢工作台1上。抛光液装置安装在抛光垫2上方,抛光液6滴落在研磨垫2上,实现对研磨抛光的辅助加工。Tungsten alloy sample 3 is made of 95W-3.5Ni-1.5Fe alloy, which is made by sintering reduced tungsten, carbonyl nickel and carbonyl iron powders with average diameters of 2.5μm, 2.5μm, and 3.5μm respectively, and the processing size is Φ15 ×7mm 3 . Use paraffin to evenly bond three tungsten alloy samples 3 to the circumference of the fixture 4 with a diameter of Φ100 mm, and use the breeding disc 5 to perform pressure loading on the samples 3 . The grinding pad 2 is bonded on the stainless steel workbench 1 of the grinding and polishing machine. The polishing liquid device is installed above the polishing pad 2, and the polishing liquid 6 drops on the polishing pad 2 to realize auxiliary processing for grinding and polishing.
1)抛光液为去离子水,抛光液流量设置为8.5ml/min。固结磨料研磨,磨料选用金刚石磨粒,磨料的粒径为15~25μm,研磨垫2选用金刚石固结磨粒研磨垫。加工盘转速设置为70rmp,工件转速设置为60rmp,设置研磨加载压力为59kpa。加工时间设置为30min。粗研完成后用水清洗工件表面,并用气枪吹干。1) The polishing liquid is deionized water, and the flow rate of the polishing liquid is set to 8.5ml/min. Consolidated abrasives are used for grinding, and the abrasives are diamond abrasive grains with a particle size of 15-25 μm, and the grinding pad 2 is a diamond consolidated abrasives grinding pad. The processing disc speed is set to 70rmp, the workpiece speed is set to 60rmp, and the grinding loading pressure is set to 59kpa. The processing time was set to 30min. After rough grinding, wash the surface of the workpiece with water and dry it with an air gun.
2)更换研磨垫,保证精研的金刚石磨料粒径为5~10μm,加工时间设置为40min,其他如抛光液流量,加工盘和工件转速等参数设置均与粗研过程相同。精研完成后用水清洗工件表面,并用气枪吹干。2) Replace the grinding pad to ensure that the particle size of the finely ground diamond abrasive is 5-10 μm, and the processing time is set to 40 minutes. Other parameters such as the flow rate of the polishing liquid, the speed of the processing disc and the workpiece speed are set in the same way as the rough grinding process. After lapping, wash the surface of the workpiece with water and dry it with an air gun.
3)配置混合抛光液:混合抛光液包括酸性溶液、硅溶胶溶液和去离子水,其中酸性溶液为柠檬酸晶体调节,混合后的溶液PH值设置为4。硅溶胶溶液中含有二氧化硅磨粒,磨粒粒径为72nm,硅溶胶的浓度设置在15vol.%。3) Configure mixed polishing solution: the mixed polishing solution includes acid solution, silica sol solution and deionized water, wherein the acid solution is regulated by citric acid crystals, and the pH value of the mixed solution is set to 4. The silica sol solution contains silica abrasive grains with a diameter of 72 nm, and the concentration of the silica sol is set at 15 vol.%.
4)更换抛光垫,将上述抛光液滴落在抛光垫上,抛光液流量设置为5.5ml/min。游离磨料抛光,磨料选用二氧化硅磨粒,抛光垫选用IC 1000/SubaⅣ。加工盘转速设置为60rmp,工件转速设置为50rmp,设置抛光加载压力为29kpa。加工时间设置为1.5h。抛光完成后用水清洗工件表面,并用气枪吹干,抛光后的钨合金表面的粗糙度达到Ra 7nm。4) Replace the polishing pad, drop the above-mentioned polishing liquid on the polishing pad, and set the flow rate of the polishing liquid to 5.5ml/min. For free abrasive polishing, the abrasive is made of silicon dioxide abrasive grains, and the polishing pad is made of IC 1000/SubaⅣ. The processing disc rotation speed is set to 60rmp, the workpiece rotation speed is set to 50rmp, and the polishing loading pressure is set to 29kpa. The processing time is set to 1.5h. After polishing, wash the surface of the workpiece with water and dry it with an air gun. The roughness of the polished tungsten alloy surface reaches Ra 7nm.
本说明书实施例所述的内容仅仅是对发明构思的实现形式的列举,本发明的保护范围不应当被视为仅限于实施例所陈述的具体形式,本发明的保护范围也包括本领域技术人员根据本发明构思所能够想到的等同技术手段。The content described in the embodiments of this specification is only an enumeration of the implementation forms of the inventive concept. The protection scope of the present invention should not be regarded as limited to the specific forms stated in the embodiments. The protection scope of the present invention also includes those skilled in the art. Equivalent technical means conceivable according to the concept of the present invention.
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