CN110491340A - Micro display pixel arrangement, micro display device and compensation method - Google Patents
Micro display pixel arrangement, micro display device and compensation method Download PDFInfo
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Abstract
本发明涉及一种微显示像素装置,包括:发光器件;显示驱动模块,其耦合到所述发光器件,配置为接收扫描信号和数据信号以及驱动所述发光器件,其至少包括耦合到所述发光器件的驱动晶体管;以及反馈补偿模块,其耦合到所述发光器件和所述显示驱动模块,配置为通过电容耦合对所述驱动模块进行反馈补偿,其至少包括耦合到所述驱动晶体管控制极的第一存储电容。本发明还涉及一种微显示装置和一种微显示像素装置的补偿方法。
The present invention relates to a micro-display pixel device, comprising: a light-emitting device; a display drive module, coupled to the light-emitting device, configured to receive scan signals and data signals and drive the light-emitting device, which at least includes a light-emitting device coupled to the light-emitting device A driving transistor of the device; and a feedback compensation module, which is coupled to the light emitting device and the display driving module, configured to perform feedback compensation on the driving module through capacitive coupling, and which at least includes a control electrode coupled to the driving transistor first storage capacitor. The invention also relates to a micro display device and a compensation method for the micro display pixel device.
Description
技术领域technical field
本发明涉及一种电路,特别地涉及一种微显示像素电路。The invention relates to a circuit, in particular to a micro display pixel circuit.
背景技术Background technique
微显示装置由于其体积小,便于携带等特点,成为目前显示研究领域的一个热点问题。但是由于微显示装置显示面积小,距离使用者眼睛非常近,为了达到与大屏显示的同等分辨率,在微显示装置中单个像素的面积的尺寸就非常小,只有几百微米。因此在微显示装置的单个像素电路中的存储电容也非常小,一般只在fF级别。由于像素电路中开关晶体管漏电流的存在,使得在一帧时间内存储电容的电压变化幅度会过大,由于发光器件在存储电容电压变化的情况下发光,因此存储电容上的电压如果变化过大的话会影响显示面板的正常显示。传统常用的方法是通过提取发光器件例如OLED两端的电压,通过反馈补偿存储电容中电荷的变化,但这样做会使得像素电路的驱动晶体管产生的电流在一定程度上受到发光器件例如OLED老化的影响。Due to its small size and portability, microdisplay devices have become a hot issue in the field of display research. However, due to the small display area of the micro-display device, which is very close to the user's eyes, in order to achieve the same resolution as the large-screen display, the size of a single pixel in the micro-display device is very small, only a few hundred microns. Therefore, the storage capacitance in a single pixel circuit of the micro display device is also very small, generally only at the fF level. Due to the existence of the leakage current of the switch transistor in the pixel circuit, the voltage of the storage capacitor will change too much within a frame time. Since the light-emitting device emits light when the voltage of the storage capacitor changes, if the voltage on the storage capacitor changes too Otherwise, it will affect the normal display of the display panel. The traditional and commonly used method is to extract the voltage across the light-emitting device such as OLED, and compensate the change of charge in the storage capacitor through feedback, but this will make the current generated by the driving transistor of the pixel circuit be affected by the aging of the light-emitting device such as OLED to a certain extent. .
发明内容Contents of the invention
针对现有技术中存在的技术问题,本发明提出了一种微显示像素装置采用电容耦合作用来补偿存储电容的电荷的变化,进而减小晶体管漏电流对像素电路的影响。Aiming at the technical problems in the prior art, the present invention proposes a micro-display pixel device that uses capacitive coupling to compensate for changes in the charge of the storage capacitor, thereby reducing the impact of transistor leakage current on the pixel circuit.
本发明技术方案如下:一种微显示像素装置,包括:发光器件;显示驱动模块,其耦合到所述发光器件,配置为接收扫描信号和数据信号以及驱动所述发光器件,其至少包括耦合到所述发光器件的第一驱动晶体管;以及反馈补偿模块,其至少一个输入端和输出端都耦合到所述第一驱动晶体管的控制极,配置为通过电容耦合对所述驱动模块进行反馈补偿,其至少包括耦合到所述第一驱动晶体管控制极的第一存储电容。The technical solution of the present invention is as follows: a micro-display pixel device, including: a light emitting device; a display driving module, coupled to the light emitting device, configured to receive scan signals and data signals and drive the light emitting device, which at least includes a light emitting device coupled to The first driving transistor of the light emitting device; and a feedback compensation module, at least one input terminal and an output terminal of which are coupled to the control electrode of the first driving transistor, configured to perform feedback compensation on the driving module through capacitive coupling, It includes at least a first storage capacitor coupled to the gate of the first drive transistor.
特别的,所述反馈补偿模块还包括:第一反馈晶体管,其第一极耦合至第一公共电位,控制极耦合至所述第一驱动晶体管控制极;第一开关晶体管,其第一极耦合至所述第一反馈晶体管的第二极,其第二极和控制极耦合并接地;所述第一存储电容耦合在所述第一反馈晶体管的控制极和第二极之间。Specifically, the feedback compensation module further includes: a first feedback transistor, the first pole of which is coupled to the first common potential, and the control pole is coupled to the control pole of the first driving transistor; the first switch transistor, whose first pole is coupled To the second pole of the first feedback transistor, the second pole and the control pole thereof are coupled and grounded; the first storage capacitor is coupled between the control pole and the second pole of the first feedback transistor.
特别的,所述反馈补偿模块还包括第二开关晶体管,其第一极耦合至第一公共电位,其控制极配置为接收补偿控制信号,其第二极耦合至所述第一反馈晶体管第一极。In particular, the feedback compensation module further includes a second switch transistor, the first pole of which is coupled to the first common potential, the control pole of which is configured to receive the compensation control signal, and the second pole of which is coupled to the first feedback transistor of the first feedback transistor. pole.
特别的,所述显示驱动模块还包括:第一显示开关晶体管,其控制极配置为接收扫描信号,其第一极配置为接收数据信号;所述驱动晶体管的第一极耦合至第一公共电位,其控制极耦合至所述第一显示开关晶体管第二极,其第二极耦合至所述发光器件阳极;以及第二存储电容,其耦合到所述第一驱动晶体管的控制极和第一极之间。Specifically, the display driving module further includes: a first display switching transistor, the control pole of which is configured to receive a scan signal, and the first pole of which is configured to receive a data signal; the first pole of the driving transistor is coupled to a first common potential , the control electrode of which is coupled to the second electrode of the first display switch transistor, the second electrode of which is coupled to the anode of the light emitting device; and a second storage capacitor, which is coupled to the control electrode of the first driving transistor and the first between poles.
本发明还涉及一种微显示装置,包括:像素阵列,其中所述像素阵列包括至少一个或多个如权利要求1-4所述的微显示像素装置;与所述像素阵列耦合的提供数据信号的数据驱动电路及提供扫描信号的栅极驱动电路;以及与所述像素阵列耦合的采样补偿电路,配置为对所述数据驱动电路提供的数据信号进行采样并判断针对特定的数据信号是否启动所述像素电路中的补偿模块。The present invention also relates to a micro display device, comprising: a pixel array, wherein the pixel array includes at least one or more micro display pixel devices as claimed in claims 1-4; A data driving circuit and a gate driving circuit providing scanning signals; and a sampling compensation circuit coupled to the pixel array, configured to sample the data signal provided by the data driving circuit and determine whether to start the specific data signal The compensation module in the above pixel circuit.
特别的,所述采样补偿电路包括:发光器件;显示驱动模块,其耦合到所述发光器件,配置为接收扫描信号和数据信号以及驱动所述发光器件;初始采样模块,其耦合到所述采样补偿电路中的发光器件和所述采样补偿电路中的显示驱动模块,配置为采样某一灰阶对应的发光器件驱动电压,并将采样到的结果与预设阈值进行比较,从而判断是否要对该灰阶进行补偿;以及存储模块,其配置为存储所述初始采样模块输出的判断结果。Specifically, the sampling compensation circuit includes: a light emitting device; a display driving module, coupled to the light emitting device, configured to receive scan signals and data signals and drive the light emitting device; an initial sampling module, coupled to the sampling The light emitting device in the compensation circuit and the display driving module in the sampling compensation circuit are configured to sample the driving voltage of the light emitting device corresponding to a certain gray scale, and compare the sampled result with a preset threshold, so as to judge whether to The gray scale is compensated; and a storage module configured to store the judgment result output by the initial sampling module.
特别的,所述初始采样模块包括:第三开关晶体管,其第一极耦合至第一公共电位,其控制极配置为接收第一初始化信号;第四开关晶体管,其第一极耦合至所述发光器件阳极,其控制极配置为接收所述第一初始化信号;第五开关晶体管,其第一极耦合至所述发光器件阳极,其第二极耦合至所述第三开关晶体管第二极,其控制极配置为接收第二初始化信号,其中所述第一和第二初始化信号彼此互补或有效电平不重叠;第三存储电容,其耦合在地电平和所述第四开关晶体管第二极之间;以及迟滞比较器,所述迟滞比较器的同相端耦合至所述第五开关晶体管第二极,反相端耦合至第四开关晶体管第二极,其中所述预设阈值为所述迟滞比较器的窗口电压,其为所有所述显示驱动模块任意两个灰阶对应的发光器件驱动电压之差中的最小值;当其配置为当所述迟滞比较器反相端电压与同相端电压差小于所述窗口电压时,所述判断结果为针对该灰度不需要进行补偿;当所述迟滞比较器反相端与同相端电压差大于所述窗口电压时,所述判断结果为针对该灰度需要进行补偿。Specifically, the initial sampling module includes: a third switch transistor, the first pole of which is coupled to the first common potential, and the control pole of which is configured to receive the first initialization signal; a fourth switch transistor, whose first pole is coupled to the the anode of the light emitting device, the control electrode of which is configured to receive the first initialization signal; the fifth switch transistor, the first electrode of which is coupled to the anode of the light emitting device, and the second electrode of which is coupled to the second electrode of the third switch transistor, Its control electrode is configured to receive a second initialization signal, wherein the first and second initialization signals are complementary to each other or the effective levels do not overlap; the third storage capacitor is coupled between the ground level and the second electrode of the fourth switching transistor and a hysteresis comparator, the non-inverting terminal of the hysteresis comparator is coupled to the second pole of the fifth switching transistor, and the inverting terminal is coupled to the second pole of the fourth switching transistor, wherein the preset threshold value is the The window voltage of the hysteresis comparator is the minimum value of the difference between the driving voltages of the light-emitting devices corresponding to any two gray scales of all the display drive modules; When the voltage difference is smaller than the window voltage, the judgment result is that compensation is not required for the gray level; when the voltage difference between the inverting terminal and the non-inverting terminal of the hysteresis comparator is greater than the window voltage, the judgment result is This gray scale needs to be compensated.
特别的,所述显示驱动模块包括:第二显示开关晶体管,其控制极耦合到扫描信号,其第一极耦合到数据信号;第二驱动晶体管,其第一极耦合至第一公共电位,控制极耦合至所述第二场显示开关晶体管第二极,其第二极耦合至发光器件阳极;第四存储电容,其耦合到所述第二驱动晶体管的控制极和第一极之间。Specifically, the display driving module includes: a second display switching transistor, the control electrode of which is coupled to the scan signal, and the first electrode of which is coupled to the data signal; the second driving transistor, whose first electrode is coupled to the first common potential, controls The pole is coupled to the second pole of the second field display switching transistor, and the second pole is coupled to the anode of the light emitting device; the fourth storage capacitor is coupled between the control pole and the first pole of the second driving transistor.
特别的,所述采样补偿电路还包括采样反馈补偿模块,所述采样反馈补偿模块包括:第二反馈晶体管,其第一极耦合至第一公共电位,其控制极耦合至所述第四开关晶体管第二极;第六开关晶体管,其第一极耦合至所述第二反馈晶体管的第二极,其第二极和控制极耦合并接地;第五存储电容,其耦合在所述第二反馈开关晶体管的控制极和第二极之间。In particular, the sampling compensation circuit further includes a sampling feedback compensation module, the sampling feedback compensation module includes: a second feedback transistor, the first pole of which is coupled to the first common potential, and the control pole of which is coupled to the fourth switching transistor The second pole; the sixth switch transistor, the first pole of which is coupled to the second pole of the second feedback transistor, the second pole and the control pole of which are coupled and grounded; the fifth storage capacitor, which is coupled to the second feedback transistor Between the control pole and the second pole of the switching transistor.
本发明还涉及一种微显示像素装置的补偿方法,包括:采样侦测用于微显示装置的全部灰阶对应的数据信号,判断每一灰阶对应数据信号是否需要补偿,并存储所述侦测结果;在扫描信号的控制下接收与特定灰阶信号对应的数据信号;以及根据所存储的侦测结果判断针对当前数据信号是否需要进行补偿,并输出相应补偿控制信号,以控制对微显示装置中像素阵列中各像素的补偿情况。The present invention also relates to a compensation method for a micro-display pixel device, comprising: sampling and detecting data signals corresponding to all gray scales used in the micro-display device, judging whether the data signals corresponding to each gray scale need to be compensated, and storing the detected Receive the data signal corresponding to the specific grayscale signal under the control of the scanning signal; and judge whether the current data signal needs to be compensated according to the stored detection result, and output the corresponding compensation control signal to control the micro display The compensation of each pixel in the pixel array of the device.
本申请所提供的像素结构以及相应的采用补偿电路和补偿方法提供了一种动态并且有针对性的补偿机制,可以针对不同的灰度动态的判断是否需要的对特定像素进行补偿。相较于不区分灰度不区分具体情况而进行统一补偿的结构,本申请所提供的微显示设备的功耗更低。另外,本申请中的设计利用了像素电路中原有的空余面积来安排该补偿模块,因此并不会增加原有像素的面积。The pixel structure provided in the present application and the corresponding compensation circuit and compensation method provide a dynamic and targeted compensation mechanism, which can dynamically determine whether to compensate a specific pixel for different gray levels. Compared with the structure that performs uniform compensation without distinguishing between gray levels and specific conditions, the power consumption of the microdisplay device provided by the present application is lower. In addition, the design in this application utilizes the original vacant area in the pixel circuit to arrange the compensation module, so the area of the original pixel will not be increased.
附图说明Description of drawings
下面,将结合附图对本发明的优选实施方式进行进一步详细的说明,其中:Below, preferred embodiment of the present invention will be described in further detail in conjunction with accompanying drawing, wherein:
图1为传统OLED显示像素电路示意图;FIG. 1 is a schematic diagram of a conventional OLED display pixel circuit;
图2为根据本发明的一个实施例微显示像素装置示意图;Fig. 2 is a schematic diagram of a micro display pixel device according to an embodiment of the present invention;
图3为根据本发明的一个实施例微显示像素装置工作时序图;Fig. 3 is a working sequence diagram of a micro display pixel device according to an embodiment of the present invention;
图4为根据本发明一个实施例微显示像素装置在特定灰度下的仿真结果图;FIG. 4 is a simulation result diagram of a micro-display pixel device at a specific grayscale according to an embodiment of the present invention;
图5为根据本发明另一个实施例微显示像素装置在特定灰度下的仿真结果图;5 is a simulation result diagram of a micro-display pixel device at a specific grayscale according to another embodiment of the present invention;
图6为根据本发明一个实施例微显示装置的采样补偿电路示意图;6 is a schematic diagram of a sampling compensation circuit of a micro-display device according to an embodiment of the present invention;
图7为根据本发明一个实施例微显示装置的采样补偿电路工作时序图;FIG. 7 is a working timing diagram of a sampling compensation circuit of a micro-display device according to an embodiment of the present invention;
图8为根据本发明一个实施例微显示装置的架构图;FIG. 8 is a structural diagram of a microdisplay device according to an embodiment of the present invention;
图9为根据本发明一个实施例微显示装置像素电路的补偿方法流程图;9 is a flow chart of a compensation method for a pixel circuit of a micro-display device according to an embodiment of the present invention;
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
在以下的详细描述中,可以参看作为本申请一部分用来说明本申请的特定实施例的各个说明书附图。在附图中,相似的附图标记在不同图式中描述大体上类似的组件。本申请的各个特定实施例在以下进行了足够详细的描述,使得具备本领域相关知识和技术的普通技术人员能够实施本申请的技术方案。应当理解,还可以利用其它实施例或者对本申请的实施例进行结构、逻辑或者电性的改变。In the following detailed description, reference is made to the accompanying drawings which are included in the specification and which illustrate specific embodiments of the application and which are included in this application. In the drawings, like reference numerals describe substantially similar components in different views. Various specific embodiments of the present application are described in sufficient detail below, so that those of ordinary skill in the art can implement the technical solutions of the present application. It should be understood that other embodiments may also be utilized or structural, logical or electrical changes may be made to the embodiments of the present application.
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
在以下的详细描述中,可以参看作为本申请一部分用来说明本申请的特定实施例的各个说明书附图。在附图中,相似的附图标记在不同图式中描述大体上类似的组件。本申请的各个特定实施例在以下进行了足够详细的描述,使得具备本领域相关知识和技术的普通技术人员能够实施本申请的技术方案。应当理解,还可以利用其它实施例或者对本申请的实施例进行结构、逻辑或者电性的改变。In the following detailed description, reference is made to the accompanying drawings which are included in the specification and which illustrate specific embodiments of the application and which are included in this application. In the drawings, like reference numerals describe substantially similar components in different views. Various specific embodiments of the present application are described in sufficient detail below, so that those of ordinary skill in the art can implement the technical solutions of the present application. It should be understood that other embodiments may also be utilized or structural, logical or electrical changes may be made to the embodiments of the present application.
本申请中,晶体管可指任何结构的晶体管,例如场效应晶体管(FET)或者双极型晶体管(BJT)。当晶体管为场效应晶体管时,其控制极是指场效应晶体管的栅极,第一极可以为场效应晶体管的漏极或源极,对应的第二极可以为场效应晶体管的源极或漏极;当晶体管为双极型晶体管时,其控制极是指双极型晶体管的基极,第一极可以为双极型晶体管的集电极或发射极,对应的第二极可以为双极型晶体管的发射极或集电极。迟滞比较器可以是同相迟滞比较器或者反相迟滞比较器。发光器件可以是有机发光二极管(OLED)、量子点发光二极管(QLED)、无机发光二极管(LED)等等。In this application, a transistor may refer to a transistor of any structure, such as a field effect transistor (FET) or a bipolar junction transistor (BJT). When the transistor is a field effect transistor, its control pole refers to the gate of the field effect transistor, the first pole can be the drain or source of the field effect transistor, and the corresponding second pole can be the source or drain of the field effect transistor When the transistor is a bipolar transistor, its control pole refers to the base of the bipolar transistor, the first pole can be the collector or emitter of the bipolar transistor, and the corresponding second pole can be bipolar The emitter or collector of a transistor. The hysteretic comparator can be a non-inverting hysteretic comparator or an inverting hysteretic comparator. The light emitting device may be an organic light emitting diode (OLED), a quantum dot light emitting diode (QLED), an inorganic light emitting diode (LED), or the like.
图1为传统显示像素电路示意图。FIG. 1 is a schematic diagram of a traditional display pixel circuit.
如图所示,电路包括驱动晶体管111、显示开关晶体管112、存储电容器113和发光器件114。扫描控制信号线SCAN上的扫描控制信号用于控制显示开关晶体管112来接收数据信号线DATA上的数据电压信息并存储到存储电容器113。当晶体管112截止时,存储电容器113上的电压将用来驱动驱动晶体管111,使得发光器件114发光。然而,由于开关晶体管112存在漏电流,会对存储电容113的电压造成影响,进而影响发光器件114的发光强度。As shown, the circuit includes a drive transistor 111 , a display switch transistor 112 , a storage capacitor 113 and a light emitting device 114 . The scan control signal on the scan control signal line SCAN is used to control the display switch transistor 112 to receive the data voltage information on the data signal line DATA and store it in the storage capacitor 113 . When the transistor 112 is turned off, the voltage on the storage capacitor 113 will be used to drive the driving transistor 111 to make the light emitting device 114 emit light. However, due to the leakage current of the switching transistor 112 , it will affect the voltage of the storage capacitor 113 , thereby affecting the luminous intensity of the light emitting device 114 .
针对上述问题,本发明提出了一种具有反馈补偿机制的像素电路。下面以晶体管为P型场效应晶体管,发光器件为有机发光二极管OLED为例对本申请做详细的说明。可以理解的是,在其它实施例中,晶体管也可以是双极型晶体管,发光器件也可以是量子点发光二极管,等其它发光器件。In view of the above problems, the present invention proposes a pixel circuit with a feedback compensation mechanism. Hereinafter, the present application will be described in detail by taking the transistor as a P-type field effect transistor and the light-emitting device as an organic light-emitting diode (OLED) as an example. It can be understood that, in other embodiments, the transistor may also be a bipolar transistor, and the light emitting device may also be a quantum dot light emitting diode, or other light emitting devices.
图2为依据本发明一个实施例微显示像素装置示意图。该电路包括彼此耦合的显示驱动模块21、反馈补偿模块22和发光器件23。其中,反馈补偿模块22可以配置为根据显示驱动模块21中的晶体管漏电流情况来相应的进行补偿。FIG. 2 is a schematic diagram of a micro display pixel device according to an embodiment of the present invention. The circuit includes a display driving module 21 , a feedback compensation module 22 and a light emitting device 23 coupled to each other. Wherein, the feedback compensation module 22 can be configured to perform corresponding compensation according to the leakage current of the transistor in the display driving module 21 .
根据一个实施例,显示驱动模块21可以包括驱动晶体管211、显示开关晶体管212、第一存储电容213。According to an embodiment, the display driving module 21 may include a driving transistor 211 , a display switching transistor 212 , and a first storage capacitor 213 .
驱动晶体管211的第一极耦合配置为接收第一电位信号VCC,第二极耦合至发光器件23的阳极,控制极耦合至显示开关晶体管212的第二极。显示开关晶体管212的第一极耦合至数据信号线,以接收数据电压Vdata,显示开关晶体管212的控制极耦合至扫描信号线,以接收扫描电压Vscan。存储电容213耦合在驱动晶体管211的控制极和第一极之间。发光器件23的阴极耦合至第二电极Vcom。根据一个实施例,这个Vcom是可以根据发光显示的需求,以及发光器件的情况变化的一个低电位,其中Vcom<VCC。The first pole of the driving transistor 211 is coupled to receive the first potential signal VCC, the second pole is coupled to the anode of the light emitting device 23 , and the control pole is coupled to the second pole of the display switch transistor 212 . The first electrode of the display switch transistor 212 is coupled to the data signal line to receive the data voltage Vdata, and the control electrode of the display switch transistor 212 is coupled to the scan signal line to receive the scan voltage Vscan. The storage capacitor 213 is coupled between the control electrode and the first electrode of the driving transistor 211 . The cathode of the light emitting device 23 is coupled to the second electrode Vcom. According to an embodiment, the Vcom is a low potential that can be changed according to the requirements of the light-emitting display and the conditions of the light-emitting device, wherein Vcom<VCC.
根据一个实施例,反馈补偿模块22可以包括开关晶体管221、反馈晶体管222、开关晶体管223以及电容224。According to an embodiment, the feedback compensation module 22 may include a switch transistor 221 , a feedback transistor 222 , a switch transistor 223 and a capacitor 224 .
开关晶体管221的第一极配置为接收高电位信号VCC,第二极耦合至反馈晶体管222第一极,控制极配置为接收补偿控制信号Vctrl。根据一个实施例,当需要对驱动模块21进行补偿的时候,Vctrl可以被系统调整到可以使开关晶体管221导通的水平,反之则保持在使晶体管221截止的水平。反馈晶体管222的控制极耦合至驱动晶体管211的控制极和节点A,第二极耦合至第二开关晶体管223第一极和节点B。开关晶体管223的第二极和控制极耦合并接地,其经配置可以等效为一个二极管,与电容224形成充放电回路。电容224耦合在节点A及节点B之间。The first pole of the switch transistor 221 is configured to receive the high potential signal VCC, the second pole is coupled to the first pole of the feedback transistor 222 , and the control pole is configured to receive the compensation control signal Vctrl. According to an embodiment, when the driving module 21 needs to be compensated, Vctrl can be adjusted by the system to a level that can turn on the switching transistor 221 , otherwise it can be kept at a level that can turn off the transistor 221 . The control electrode of the feedback transistor 222 is coupled to the control electrode of the driving transistor 211 and the node A, and the second electrode is coupled to the first electrode of the second switching transistor 223 and the node B. The second electrode of the switch transistor 223 is coupled to the control electrode and grounded, which is configured to be equivalent to a diode, and forms a charging and discharging circuit with the capacitor 224 . Capacitor 224 is coupled between node A and node B.
根据另一个实施例,可选择的,其中开关晶体管223还可替换为一个恒流源,与电容224形成充放电回路,同样能达到上述目的。According to another embodiment, optionally, the switch transistor 223 can also be replaced with a constant current source to form a charging and discharging circuit with the capacitor 224, which can also achieve the above purpose.
图3是根据本发明的一个实施例微显示像素装置工作时序图,下面结合图2和图3详细描述本发明第一实施例工作原理。此处以晶体管为PMOS晶体管为例进行说明。当然,如本领域技术人员所知的,本实施例是的晶体管也可以是NMOS管。FIG. 3 is a working sequence diagram of a micro-display pixel device according to an embodiment of the present invention. The working principle of the first embodiment of the present invention will be described in detail below in conjunction with FIG. 2 and FIG. 3 . Here, the transistor is a PMOS transistor as an example for description. Of course, as known to those skilled in the art, the transistor in this embodiment may also be an NMOS transistor.
如图3所示,根据一个实施例,在数据写入阶段,当Vscan为低电平时,开关晶体管212导通,带有显示灰阶信息的数据信号Vdata被存储到电容213中。As shown in FIG. 3 , according to one embodiment, in the data writing phase, when Vscan is at a low level, the switch transistor 212 is turned on, and the data signal Vdata with display grayscale information is stored in the capacitor 213 .
随后,在发光阶段,Vscan跳变到高电平,开关晶体管212断开,电容213放电,驱动晶体管211导通,发光器件23发光。Subsequently, in the light-emitting phase, Vscan jumps to a high level, the switching transistor 212 is turned off, the capacitor 213 is discharged, the driving transistor 211 is turned on, and the light-emitting device 23 emits light.
根据一个实施例,如图3所示,如果系统认为在当前灰阶下不需要对驱动模块21进行补偿,则可以将Vctrl设为例如高电平,开关晶体管221关断,反馈补偿模块22不工作。According to one embodiment, as shown in FIG. 3 , if the system considers that the driving module 21 does not need to be compensated under the current gray scale, Vctrl can be set to a high level, the switching transistor 221 is turned off, and the feedback compensation module 22 is not activated. Work.
根据另一个实施例,如果系统认为当前灰阶下需要对驱动模块21进行补偿,则可以将Vctrl设为例如低电平,开关晶体管221导通,反馈补偿模块22工作。由于开关晶体管212漏电,使得节点A的电压升高时,反馈晶体管222的控制极电压升高,因此流过反馈晶体管222的电流降低,使得节点B的电压下降,在节点B和电容224下极板之间产生电压差,因此电容224存储的多余电荷通过开关晶体管223流出,使得电容224下极板的电压降低。进而,通过电容224和电容213的电容耦合,使得A点电压下降。According to another embodiment, if the system considers that the driving module 21 needs to be compensated in the current gray scale, Vctrl can be set to a low level, the switching transistor 221 is turned on, and the feedback compensation module 22 works. Due to the leakage of the switching transistor 212, when the voltage of the node A increases, the voltage of the control electrode of the feedback transistor 222 increases, so the current flowing through the feedback transistor 222 decreases, so that the voltage of the node B decreases, and the node B and the lower pole of the capacitor 224 A voltage difference is generated between the plates, so the excess charge stored in the capacitor 224 flows out through the switching transistor 223, so that the voltage of the lower plate of the capacitor 224 decreases. Furthermore, through the capacitive coupling between the capacitor 224 and the capacitor 213 , the voltage at point A drops.
图4为根据本发明一个实施例微显示像素装置在特定灰度下的仿真结果图,即驱动晶体管211的控制极电压和流经驱动晶体管211的电流的仿真结果图。其中,当前帧的数据电压(即电容213中存储的电荷)对应最低灰阶,开关晶体管212截止,下一帧的数据信号(即在Vdata数据线上接收到的待写入电压)对应最高灰阶,这样可以最大限度的体现晶体管漏电流对像素电路的影响。FIG. 4 is a simulation result diagram of a micro-display pixel device at a specific grayscale according to an embodiment of the present invention, that is, a simulation result diagram of the gate voltage of the driving transistor 211 and the current flowing through the driving transistor 211 . Wherein, the data voltage of the current frame (that is, the charge stored in the capacitor 213) corresponds to the lowest gray scale, the switching transistor 212 is turned off, and the data signal of the next frame (that is, the voltage to be written received on the Vdata data line) corresponds to the highest gray scale. In this way, the influence of transistor leakage current on the pixel circuit can be reflected to the greatest extent.
图4所示为根据本申请一个实施例的像素电路在经过图2所示的电路中反馈补偿模块22补偿后和未经过反馈补偿时驱动晶体管211栅极电压以及流过驱动晶体管211在频率为60HZ的一帧图像内的变化情况。图4中,曲线401代表图2所示电路在反馈补偿模块22没有启动的情况下的驱动晶体管211栅极电压随时间的变化,曲线402代表图2所示电路在反馈补偿模块22启动的情况下的驱动晶体管211栅极电压随时间变化,曲线404代表图2所示电路在反馈补偿模块22没有启动的情况下的流经发光器件23的电流随时间的变化,曲线403代表图2所示电路在反馈补偿模块22启动的情况下流经发光器件23的电流随时间的变化。FIG. 4 shows the gate voltage of the driving transistor 211 and the frequency of the pixel circuit flowing through the driving transistor 211 after being compensated by the feedback compensation module 22 in the circuit shown in FIG. 2 and without feedback compensation according to an embodiment of the present application. Changes within a frame of 60HZ images. In FIG. 4 , the curve 401 represents the variation of the gate voltage of the driving transistor 211 with time when the feedback compensation module 22 is not started in the circuit shown in FIG. 2 , and the curve 402 represents the situation when the feedback compensation module 22 is started in the circuit shown in FIG. The gate voltage of the driving transistor 211 below changes with time, and the curve 404 represents the change of the current flowing through the light-emitting device 23 with time when the feedback compensation module 22 is not activated in the circuit shown in FIG. The circuit changes with time the current flowing through the light emitting device 23 when the feedback compensation module 22 is activated.
根据实验测得,反馈补偿模块22没有启动的状态下,在开关晶体管212产生漏电影响的前后,驱动晶体管栅极电压升高256.815mV,驱动电流升高5989pA。反馈补偿模块22启动的状态下,在开关晶体管212产生漏电影响的前后,驱动晶体管栅极电压升高18.834mV,驱动电流升高497.2pA。远低于没有启动补偿模块的情况。According to experiments, when the feedback compensation module 22 is not activated, the gate voltage of the driving transistor increases by 256.815mV, and the driving current increases by 5989pA before and after the leakage of the switching transistor 212 occurs. When the feedback compensation module 22 is activated, the gate voltage of the driving transistor increases by 18.834 mV, and the driving current increases by 497.2 pA before and after the leakage of the switching transistor 212 occurs. Much lower than without the compensation module activated.
图5为根据本发明另一个实施例微显示像素装置在特定灰度下的仿真结果图,即驱动晶体管211的控制极电压和流经驱动晶体管211的电流的仿真结果图。其中,当前帧的数据电压(即电容213中存储的电荷)对应最高灰阶,开关晶体管212截止,下一帧的数据信号(即在Vdata数据线上接收到的待写入电压)对应最低灰阶,这样同样可以最大限度的体现晶体管漏电流对像素电路的影响。FIG. 5 is a simulation result diagram of a micro-display pixel device at a specific grayscale according to another embodiment of the present invention, that is, a simulation result diagram of the gate voltage of the driving transistor 211 and the current flowing through the driving transistor 211 . Wherein, the data voltage of the current frame (that is, the charge stored in the capacitor 213) corresponds to the highest gray scale, the switching transistor 212 is turned off, and the data signal of the next frame (that is, the voltage to be written received on the Vdata data line) corresponds to the lowest gray scale. In this way, the influence of transistor leakage current on the pixel circuit can also be reflected to the greatest extent.
图5所示为根据本申请一个实施例的像素电路在经过图2所示的电路中反馈补偿模块22补偿后和未经过反馈补偿时驱动晶体管211栅极电压以及流过驱动晶体管211在频率为60HZ的一帧图像内的变化情况。图5中,曲线501代表图2所示电路在反馈补偿模块22没有启动的情况下的驱动晶体管211栅极电压随时间的变化,曲线502代表图2所示电路在反馈补偿模块22启动的情况下的驱动晶体管211栅极电压随时间变化,曲线504代表图2所示电路在反馈补偿模块22没有启动的情况下的流经发光器件23的电流随时间的变化,曲线503代表图2所示电路在反馈补偿模块22启动的情况下流经发光器件23的电流随时间的变化。FIG. 5 shows the gate voltage of the driving transistor 211 and the frequency of the pixel circuit flowing through the driving transistor 211 after being compensated by the feedback compensation module 22 in the circuit shown in FIG. 2 and without feedback compensation according to an embodiment of the present application. Changes within a frame of 60HZ images. In FIG. 5 , the curve 501 represents the variation of the gate voltage of the driving transistor 211 with time under the condition that the feedback compensation module 22 is not started in the circuit shown in FIG. 2 , and the curve 502 represents the situation in which the circuit shown in FIG. The gate voltage of the driving transistor 211 below changes with time, and the curve 504 represents the change of the current flowing through the light-emitting device 23 with time when the feedback compensation module 22 is not started in the circuit shown in FIG. The circuit changes with time the current flowing through the light emitting device 23 when the feedback compensation module 22 is activated.
根据实验测得,未补偿状态下驱动晶体211管栅极电压升高174.714mV,驱动电流升高87.49pA。有补偿状态下驱动晶体管栅极电压升高35.599mV,驱动电流升高54.66pA。According to the experimental measurement, in the uncompensated state, the gate voltage of the driving transistor 211 increases by 174.714mV, and the driving current increases by 87.49pA. In the compensated state, the gate voltage of the driving transistor increases by 35.599mV, and the driving current increases by 54.66pA.
由图4、图5和仿真数据可知,在例如采用PMOS的根据本申请一个实施例的像素电路中,当图2所示电路中产生的晶体管漏电流使得驱动晶体管211控制极电压不断增大,流过驱动晶体管211的电流不断减小时,在反馈补偿模块22启动的情况下,驱动晶体管211的控制极电压和流过驱动晶体管211的电流变化幅度远小于反馈补偿模块22没有启动的情况。It can be seen from FIG. 4, FIG. 5 and simulation data that, in the pixel circuit according to one embodiment of the present application, for example, using PMOS, when the transistor leakage current generated in the circuit shown in FIG. When the current flowing through the driving transistor 211 is continuously decreasing, when the feedback compensation module 22 is activated, the variation range of the gate voltage of the driving transistor 211 and the current flowing through the driving transistor 211 is much smaller than that when the feedback compensation module 22 is not activated.
所以依据本发明一个实施例,通过对驱动晶体管211的反馈补偿,能有效减少晶体管漏电流对像素电路中发光器件23的影响,使得像素电路的工作更稳定。并且反馈补偿电路直接作用于存储电容213,不会受到发光器件老化影响。Therefore, according to an embodiment of the present invention, through the feedback compensation of the driving transistor 211 , the influence of transistor leakage current on the light emitting device 23 in the pixel circuit can be effectively reduced, so that the operation of the pixel circuit is more stable. Moreover, the feedback compensation circuit directly acts on the storage capacitor 213, and will not be affected by the aging of the light emitting device.
如上所述,在图2所示像素电路中,是通过补偿控制信号Vctrl来控制像素电路反馈补偿模块的开启或关闭的。补偿控制信号Vctrl的实现有多种方法,下面详细描述其中一种实现方法和电路结构。As mentioned above, in the pixel circuit shown in FIG. 2 , the feedback compensation module of the pixel circuit is controlled to be turned on or off by the compensation control signal Vctrl. There are many ways to implement the compensation control signal Vctrl, and one of the implementation methods and circuit structure will be described in detail below.
本发明还提出一种采样补偿电路,用于为微显示装置内部的像素阵列提供相应的补偿模块的补偿控制信号。该采样补偿电路的大致工作原理是,可以在微显示装置初始化阶段记录作为示例的像素电路在各显示灰度下所需要进行补偿的情况,并且在微显示装置正式工作的时候根据上述记录来对像素电路中的反馈补偿模块进行相应的控制。The present invention also proposes a sampling compensation circuit for providing a compensation control signal of a corresponding compensation module for a pixel array inside the micro-display device. The general working principle of the sampling compensation circuit is that, during the initialization stage of the micro-display device, it is possible to record the conditions that the pixel circuit as an example needs to perform compensation under each display gray scale, and when the micro-display device is officially working, according to the above-mentioned records. The feedback compensation module in the pixel circuit performs corresponding control.
下面以晶体管为P型场效应晶体管,发光器件为有机发光二极管为例对本申请做详细的说明。可以理解的是,在其它实施例中,晶体管也可以是双极型晶体管,发光器件也可以是量子点发光二极管,等其它发光器件。Hereinafter, the present application will be described in detail by taking the transistor as a P-type field effect transistor and the light-emitting device as an organic light-emitting diode as an example. It can be understood that, in other embodiments, the transistor may also be a bipolar transistor, and the light emitting device may also be a quantum dot light emitting diode, or other light emitting devices.
在利用本申请实施例所提供的像素电路组成像素阵列的显示装置中,可以包括一个如上所述的采样补偿电路。根据一个实施例,该采样电路可以包括彼此耦合的显示驱动模块61、初始采样模块62、存储控制模块63和发光器件65。In a display device that uses the pixel circuit provided by the embodiment of the present application to form a pixel array, a sampling compensation circuit as described above may be included. According to an embodiment, the sampling circuit may include a display driving module 61 , an initial sampling module 62 , a storage control module 63 and a light emitting device 65 coupled to each other.
根据一个实施例,显示驱动模块61可以包括驱动晶体管611、显示开关晶体管612、存储电容613。According to an embodiment, the display driving module 61 may include a driving transistor 611 , a display switching transistor 612 , and a storage capacitor 613 .
如图6所示,驱动晶体管611的第一极配置为接收高电平信号VCC,其第二极耦合至发光器件65的阳极,其控制极耦合至显示开关晶体管612的第二极。显示开关晶体管612的第一极耦合至数据信号线,以接收数据电信号Vdata,其控制极耦合至扫描信号线,以接收扫描信号Vscan。存储电容613耦合在驱动晶体管211的控制极和其第一极之间。发光器件65的阴极配置为接收公共电位信号Vcom。根据一个实施例,这个Vcom是可以根据发光显示的需求,以及发光器件的情况变化的一个低电位。As shown in FIG. 6 , the first pole of the driving transistor 611 is configured to receive the high-level signal VCC, the second pole thereof is coupled to the anode of the light emitting device 65 , and the control pole thereof is coupled to the second pole of the display switching transistor 612 . The first electrode of the display switch transistor 612 is coupled to the data signal line to receive the data electric signal Vdata, and the control electrode thereof is coupled to the scan signal line to receive the scan signal Vscan. The storage capacitor 613 is coupled between the control electrode and the first electrode of the driving transistor 211 . The cathode of the light emitting device 65 is configured to receive the common potential signal Vcom. According to an embodiment, the Vcom is a low potential that can be changed according to the requirements of the light-emitting display and the conditions of the light-emitting device.
根据一个实施例,初始采样模块62可以包括开关晶体管621、开关晶体管622、开关晶体管623、迟滞比较器624和存储电容625。所谓迟滞比较器,当正负输入之差在大小门限之差或窗口电压Vw的范围以内时,保持其输出不变,否则输出翻转。采用迟滞比较器可以避免因微小的电压波动而开启补偿功能,可以确保是在确实出现晶体管漏电流的情况才开启补偿功能。因此,可以根据用户的需要选择具有相应的窗口电压的迟滞比较器。According to an embodiment, the initial sampling module 62 may include a switch transistor 621 , a switch transistor 622 , a switch transistor 623 , a hysteresis comparator 624 and a storage capacitor 625 . The so-called hysteresis comparator keeps its output unchanged when the difference between the positive and negative inputs is within the threshold difference or the range of the window voltage Vw, otherwise the output is reversed. The use of a hysteresis comparator can avoid turning on the compensation function due to slight voltage fluctuations, and can ensure that the compensation function is turned on only when the leakage current of the transistor does occur. Therefore, a hysteretic comparator with a corresponding window voltage can be selected according to user's needs.
如图6所示,开关晶体管621的第一极配置为接收高电位信号VCC,其第二极耦合至迟滞比较器624的同相端节点C,其控制极配置为接收初始化信号电压ViniA。开关晶体管622的第一极耦合至驱动晶体管611的第二极,其第二极耦合至迟滞比较器624的反相端节点D,其控制极配置为接收初始化信号电压ViniA。开关晶体管623的第一极耦合至驱动晶体管611的第二极,其第二极耦合至迟滞比较器624的同相端节点C,其控制极配置为接收初始化信号电压ViniB。As shown in FIG. 6 , the first pole of the switching transistor 621 is configured to receive the high potential signal VCC, the second pole thereof is coupled to the non-inverting node C of the hysteresis comparator 624 , and the control pole thereof is configured to receive the initialization signal voltage ViniA. The first pole of the switch transistor 622 is coupled to the second pole of the driving transistor 611 , the second pole is coupled to the inverting terminal node D of the hysteresis comparator 624 , and its control pole is configured to receive the initialization signal voltage ViniA. The first pole of the switching transistor 623 is coupled to the second pole of the driving transistor 611 , the second pole is coupled to the non-inverting node C of the hysteresis comparator 624 , and its control pole is configured to receive the initialization signal voltage ViniB.
根据一个实施例,如图6所示,迟滞比较器624的输出端耦合至存储控制模块63的输入端。存储电容625可以耦合在地电平和迟滞比较器624的反相端节点D之间,同时迟滞比较器624的反相端节点D还可以耦合到反馈补偿模块64的输入端。According to one embodiment, as shown in FIG. 6 , the output terminal of the hysteresis comparator 624 is coupled to the input terminal of the storage control module 63 . The storage capacitor 625 can be coupled between the ground level and the inverting terminal node D of the hysteresis comparator 624 , and the inverting terminal node D of the hysteresis comparator 624 can also be coupled to the input terminal of the feedback compensation module 64 .
根据一个实施例,存储控制模块63可以包括寄存器631。如图6所示,寄存器631的输入端可以耦合至迟滞比较器624的输出端。根据一个实施例,寄存器631的输出端可以耦合至微显示装置像素阵列中像素电路的反馈补偿模块。(图6中未示出)According to one embodiment, the storage control module 63 may include a register 631 . As shown in FIG. 6 , the input of register 631 may be coupled to the output of hysteretic comparator 624 . According to one embodiment, the output terminal of the register 631 may be coupled to a feedback compensation module of a pixel circuit in a pixel array of a micro display device. (not shown in Figure 6)
根据一个实施例,其中迟滞比较器624的窗口电压值Vw定义成为灰阶最小梯度差,这个电压差是待显示的所有灰阶中彼此差异最小的两个灰阶在理想情况下(即不存在晶体管漏电流或晶体管漏电流未产生影响的情况下)所对应的发光器件阳极的电位之差。而在采样发光过程中,延迟比较器的正负输入端的电位差是在呈现特定灰度时在理想状态和在存在晶体管漏电流的情况下的发光器件阳极电位之差。According to one embodiment, the window voltage value Vw of the hysteresis comparator 624 is defined as the minimum gradient difference of the gray scale, and this voltage difference is the two gray scales with the smallest difference among all the gray scales to be displayed. The potential difference of the anode of the light-emitting device corresponding to the transistor leakage current or the condition that the transistor leakage current has no influence. In the process of sampling light emission, the potential difference between the positive and negative input terminals of the delay comparator is the difference between the anode potential of the light emitting device in an ideal state and in the presence of transistor leakage current when a specific gray scale is present.
将窗口电压Vw设为灰阶最小梯度差,是为了防止晶体管漏电流导致灰阶显示错误。当迟滞比较器624同相端电压与反相端电压之差小于迟滞比较器624窗口电压Vw时,即|VD-VC|<Vw时,迟滞比较器624可以输出例如高电平,迟滞比较器624输出值Cout=1给存储模块63,储存该灰度与其相应的Cout值的对应关系;当迟滞比较器624同相端电压VC与反相端电压VD电压差大于迟滞比较器624窗口电压Vw的时候,即|VD-VC|≥Vw时,迟滞比较器624输出翻转为例如低电平,迟滞比较器624输出值Cout=0给存储模块63,储存该灰度与其相应的Cout值的对应关系。The purpose of setting the window voltage Vw as the minimum gray scale gradient difference is to prevent gray scale display errors caused by transistor leakage current. When the difference between the voltage at the non-inverting terminal and the voltage at the inverting terminal of the hysteresis comparator 624 is less than the window voltage Vw of the hysteresis comparator 624, that is, when |V D -V C | The output value Cout =1 of the device 624 is given to the storage module 63 to store the corresponding relationship between the grayscale and its corresponding Cout value; When the voltage is Vw, that is, when |V D -V C |≥Vw, the output of the hysteresis comparator 624 is reversed to, for example, a low level, and the output value Cout=0 of the hysteresis comparator 624 is given to the storage module 63 to store the gray level and its corresponding Correspondence of Cout value.
根据一个实施例,可选择的,如图6所示,采样补偿电路还可以包括反馈补偿模块64,用于对电容625进行补偿,避免错误采样。根据一个实施例,该反馈补偿模块64可以具有与像素电路中的反馈补偿模块类似的电路结构。例如,该反馈补偿模块64可以包括反馈晶体管641、开关晶体管642和电容643。According to an embodiment, optionally, as shown in FIG. 6 , the sampling compensation circuit may further include a feedback compensation module 64 for compensating the capacitor 625 to avoid wrong sampling. According to an embodiment, the feedback compensation module 64 may have a circuit structure similar to that of the feedback compensation module in the pixel circuit. For example, the feedback compensation module 64 may include a feedback transistor 641 , a switching transistor 642 and a capacitor 643 .
反馈晶体管641的控制极作为反馈控制模块64的输入端耦合至迟滞比较器624的反相输入端节点D以及电容625的上极板,其第一极配置为接收高电位信号VCC,其第二极耦合至开关晶体管642第一极。开关晶体管642的第二极和控制极彼此耦合并共同接地,其经配置可以等效为一个二极管,与电容643形成放电回路。电容643耦合在反馈晶体管641的控制极和第二极之间。根据一个实施例,其中开关晶体管643还可替换为一个恒流源,与电容644形成放电回路,同样能达到上述目的。The control electrode of the feedback transistor 641 is used as the input terminal of the feedback control module 64 and is coupled to the inverting input node D of the hysteresis comparator 624 and the upper plate of the capacitor 625, the first electrode of which is configured to receive the high potential signal VCC, and the second electrode of which The pole is coupled to the first pole of the switching transistor 642. The second electrode and the control electrode of the switch transistor 642 are coupled to each other and are commonly grounded, which can be configured to be equivalent to a diode and form a discharge circuit with the capacitor 643 . The capacitor 643 is coupled between the control electrode and the second electrode of the feedback transistor 641 . According to an embodiment, the switch transistor 643 can also be replaced by a constant current source, forming a discharge circuit with the capacitor 644, which can also achieve the above purpose.
图7为图6所示电路的示例性工作时序图。VC迟滞比较器为同相端电压,VD为迟滞比较器反相端电压,Vw为迟滞比较器窗口电压,Cout为迟滞比较器输出值。下面结合图6、图7来详细描述根据本申请一个实施例的显示装置的初始化过程。FIG. 7 is an exemplary working timing diagram of the circuit shown in FIG. 6 . V C is the non-inverting terminal voltage of the hysteresis comparator, V D is the inverting terminal voltage of the hysteresis comparator, Vw is the window voltage of the hysteresis comparator, and Cout is the output value of the hysteresis comparator. The initialization process of the display device according to an embodiment of the present application will be described in detail below with reference to FIG. 6 and FIG. 7 .
可以将图7中的工作时序分为预跳变阶段P1、采样工作阶段P2。The working sequence in FIG. 7 can be divided into a pre-jump phase P1 and a sampling working phase P2.
(1)预跳变阶段P1(1) Pre-jump stage P1
在这个阶段,Vscan处在低电平,显示开关晶体管612处于导通状态。对应于特定灰阶的数据信号Vdata被写入,驱动晶体管611导通。初始化信号ViniA处在低电平,ViniB处在高电平。此时开关晶体管621和开关晶体管622处于导通状态,开关晶体管623处于截止状态。此时迟滞比较器624同相端配置为接收高电平信号VCC。At this stage, Vscan is at a low level, indicating that the switching transistor 612 is in an on state. The data signal Vdata corresponding to a specific gray scale is written, and the driving transistor 611 is turned on. The initialization signal ViniA is at low level, and ViniB is at high level. At this time, the switch transistor 621 and the switch transistor 622 are in the on state, and the switch transistor 623 is in the off state. At this time, the non-inverting terminal of the hysteresis comparator 624 is configured to receive the high-level signal VCC.
由于此时驱动晶体管611导通不久,所以晶体管漏电流影响可以被忽略,因此迟滞比较器624反相端电压VD可以被认为是理想状态该特定灰阶对应的发光器件阳极电压。在这个阶段,迟滞比较器624两输入端电压差(基本上等于晶体管611的阈值电压)小于迟滞比较器624窗口电压,即|VC-VD|<Vw。因此,迟滞比较器624可以配置为例如输出为高电平,即输出值Cout=1。Since the driving transistor 611 is turned on shortly at this time, the influence of the leakage current of the transistor can be ignored, so the voltage V D of the inverting terminal of the hysteresis comparator 624 can be considered as the anode voltage of the light emitting device corresponding to the specific gray scale in an ideal state. At this stage, the voltage difference between the two input terminals of the hysteresis comparator 624 (substantially equal to the threshold voltage of the transistor 611) is smaller than the window voltage of the hysteresis comparator 624, ie |V C −V D |<Vw. Therefore, the hysteresis comparator 624 can be configured, for example, to output a high level, ie output value Cout=1.
设置预跳变阶段的目的是对迟滞比较器624两输入端进行预充电,将反相端充电到理想状态下的发光器件阳极电压并保持,用于采用阶段进行比较使用;将同相输入端充电到高电平,以保证迟滞比较器624在采样阶段及时翻转的可能性。否则,迟滞比较器624的同相端会经历一段电压从0V升高到发光器件实际阳极电压的过程。在同相端电压攀升到发光器件实际阳极电压以前的大部分时间中,迟滞比较器输出值可能为0,即无论晶体管漏电流影响是否大到需要进行补偿,迟滞比较器的输出的结果均为需要补偿。这会导致对补偿控制信号的错误设置,浪费不必要的功耗。在预跳变阶段对迟滞比较器同相端充电到高电平可以使迟滞比较器的同相端更快的达到发光器件的阳极实际电压。The purpose of setting the pre-jump stage is to precharge the two input terminals of the hysteresis comparator 624, charge the inverting terminal to the anode voltage of the light-emitting device in an ideal state and maintain it, and use it for comparison in the adopting stage; charge the non-inverting input terminal to a high level to ensure the possibility of the hysteresis comparator 624 flipping in time during the sampling phase. Otherwise, the non-inverting terminal of the hysteresis comparator 624 will experience a period of voltage rising from 0V to the actual anode voltage of the light emitting device. In most of the time before the voltage of the non-inverting terminal climbs to the actual anode voltage of the light-emitting device, the output value of the hysteresis comparator may be 0, that is, no matter whether the influence of the leakage current of the transistor is large enough to be compensated, the result of the output of the hysteresis comparator is required. compensate. This can lead to incorrect settings of the compensation control signal, wasting unnecessary power consumption. Charging the non-inverting terminal of the hysteresis comparator to a high level in the pre-jump stage can make the non-inverting terminal of the hysteresis comparator reach the actual voltage of the anode of the light emitting device faster.
(2)采样工作阶段P2(2) Sampling working stage P2
在这个阶段,Vscan处在高电平,显示开关晶体管612的截止。初始化信号ViniA跳转为高电平,ViniB跳转为低电平。此时开关晶体管621和开关晶体管622处于截止状态,开关晶体管623导通。During this phase, Vscan is high, indicating the switching transistor 612 is off. The initialization signal ViniA jumps to a high level, and ViniB jumps to a low level. At this time, the switch transistor 621 and the switch transistor 622 are in the cut-off state, and the switch transistor 623 is turned on.
根据一个实施例,由于开关晶体管622处于截止状态,此时迟滞比较器624反相端电压VD由电容625提供,即当前灰阶发光器件在理想状态下的阳极电压,且VD在反馈补偿模块64的作用下保持稳定。迟滞比较器624同相端电压VC为在晶体管漏电流影响充分的情况下在当前灰阶发光器件的实际阳极电压。由于晶体管漏电流的存在,这时的VC会低于VD。According to an embodiment, since the switching transistor 622 is in the cut-off state, the voltage V D at the inverting terminal of the hysteresis comparator 624 is provided by the capacitor 625 at this time, that is, the anode voltage of the current gray-scale light-emitting device in an ideal state, and V D is in feedback compensation It remains stable under the action of module 64. The voltage V C of the non-inverting terminal of the hysteresis comparator 624 is the actual anode voltage of the current grayscale light-emitting device under the condition that the leakage current of the transistor is sufficiently affected. Due to the existence of transistor leakage current, V C will be lower than V D at this time.
如果|VD-VC|<Vw,迟滞比较器624输出为高电平,即Cout=1,即意味着对当前灰阶不需要进行补偿。如果|VD-VC|≥Vw,迟滞比较器624输出为低电平,即Cout=0,即意味着对当前灰阶需要进行补偿。If |V D −V C |<Vw, the output of the hysteresis comparator 624 is high level, that is, Cout=1, which means that compensation is not needed for the current gray scale. If |V D -V C |≥Vw, the output of the hysteresis comparator 624 is low level, that is, Cout=0, which means that the current gray scale needs to be compensated.
在对当前灰阶采样完毕后,采样电路接收对应下一个灰阶的数据信号,并再次执行P1和P2,直到寄存器631存储了全部灰阶对应的Cout值。After sampling the current gray scale, the sampling circuit receives the data signal corresponding to the next gray scale, and executes P1 and P2 again until the register 631 stores the Cout values corresponding to all gray scales.
在初始化阶段完成后,显示装置可以进入工作阶段。显示装置的控制模块会根据当前灰阶查找存储设备63内存储的相应Cout值,并将该值作为图2中补偿控制信号Vctrl,以控制像素电路中的补偿模块是否启动(例如Cout=Vctrl=1,不启动补偿模块;Cout=Vctrl=0,启动补偿模块)。After the initialization phase is completed, the display device can enter the working phase. The control module of the display device will search the corresponding Cout value stored in the storage device 63 according to the current gray scale, and use this value as the compensation control signal Vctrl in FIG. 1, do not start the compensation module; Cout=Vctrl=0, start the compensation module).
本发明还提出一种微显示装置。图8为根据本发明一个实施例的微显示装置的架构图。如图8所示,微显示装置可以包括数据驱动电路801、栅极驱动电路802、采样补偿电路803以及像素阵列804。The invention also provides a micro display device. FIG. 8 is a structural diagram of a micro display device according to an embodiment of the present invention. As shown in FIG. 8 , the micro display device may include a data driving circuit 801 , a gate driving circuit 802 , a sampling compensation circuit 803 and a pixel array 804 .
像素阵列804包括排列成行和列的多个显示像素电路,每个像素阵列均包含根据本申请实施例所提供的像素电路。数据驱动电路801经由多条数据线向像素阵列804提供数据电压信息,栅极驱动电路802经由多条扫描线向像素阵列804提供开关信号,从而使得像素阵列804能够在控制电路802的控制下基于数据电压信息来发出相应强度的光。The pixel array 804 includes a plurality of display pixel circuits arranged in rows and columns, and each pixel array includes a pixel circuit provided according to an embodiment of the present application. The data driving circuit 801 provides data voltage information to the pixel array 804 via a plurality of data lines, and the gate driving circuit 802 provides switching signals to the pixel array 804 via a plurality of scanning lines, so that the pixel array 804 can be controlled by the control circuit 802 based on Data voltage information to emit light of corresponding intensity.
采样补偿电路803在微显示装置初始化阶段工作,对全部灰阶信号进行采样,判断这些灰阶对应的数据信号中,哪些需要或不需要补偿,并将判断结果输出至存储设备。初始化阶段结束后,微显示装置进入工作阶段,根据存储设备中当前灰阶将对应的值来确定像素电路补偿模块的控制信号Vctrl。The sampling compensation circuit 803 works in the initialization stage of the micro-display device, samples all the grayscale signals, judges which of the data signals corresponding to these grayscales need to be compensated or not, and outputs the judgment result to the storage device. After the initialization phase is over, the micro display device enters the working phase, and the control signal Vctrl of the pixel circuit compensation module is determined according to the value corresponding to the current gray scale in the storage device.
具有上述结构的微显示装置能有效减少晶体管漏电流对像素电路的影响,而且减少晶体管漏电流的影响过程不受到发光器件老化影响。微显示装置中采样补偿电路能控制像素电路中反馈补偿模块是否开启,能有效减少电路功耗。The micro display device with the above structure can effectively reduce the influence of the transistor leakage current on the pixel circuit, and the process of reducing the influence of the transistor leakage current is not affected by the aging of the light-emitting device. The sampling compensation circuit in the microdisplay device can control whether the feedback compensation module in the pixel circuit is turned on, and can effectively reduce circuit power consumption.
本发明还提出了一种由本申请实施例所介绍的微显示装置像素电路的补偿方法。图9为该方法示意性流程图。The present invention also proposes a compensation method for the pixel circuit of the micro-display device introduced by the embodiment of the present application. Fig. 9 is a schematic flowchart of the method.
步骤901:采样侦测用于微显示装置的全部灰阶对应的数据信号,判断每一灰阶对应数据信号是否需要补偿,并存储所述侦测结果。Step 901: Sampling and detecting the data signals corresponding to all the gray scales used in the micro-display device, judging whether the data signals corresponding to each gray scale need to be compensated, and storing the detection results.
步骤902:在扫描信号的控制下接收与特定灰阶信号对应的数据信号。Step 902: Receive a data signal corresponding to a specific gray scale signal under the control of the scan signal.
步骤903根据所存储的侦测结果判断针对当前数据信号是否需要进行补偿,并输出相应补偿控制信号,以控制对微显示装置中像素阵列中各像素的补偿情况。Step 903 judges whether compensation is required for the current data signal according to the stored detection results, and outputs a corresponding compensation control signal to control the compensation of each pixel in the pixel array in the microdisplay device.
本申请所提供的像素结构以及相应的采用补偿电路和补偿方法提供了一种动态并且有针对性的补偿机制,可以针对不同的灰度动态的判断是否需要的对特定像素进行补偿。相较于不区分灰度不区分具体情况而进行统一补偿的结构,本申请所提供的微显示设备的功耗更低。另外,本申请中的设计利用了像素电路中原有的空余面积来安排该补偿模块,因此并不会增加原有像素的面积。The pixel structure provided in the present application and the corresponding compensation circuit and compensation method provide a dynamic and targeted compensation mechanism, which can dynamically determine whether to compensate a specific pixel for different gray levels. Compared with the structure that performs uniform compensation without distinguishing between gray levels and specific conditions, the power consumption of the microdisplay device provided by the present application is lower. In addition, the design in this application utilizes the original vacant area in the pixel circuit to arrange the compensation module, so the area of the original pixel will not be increased.
上述实施例仅供说明本发明之用,而并非是对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明范围的情况下,还可以做出各种变化和变型,因此,所有等同的技术方案也应属于本发明公开的范畴。The above-described embodiments are only for illustrating the present invention, rather than limiting the present invention. Those of ordinary skill in the relevant technical field can also make various changes and modifications without departing from the scope of the present invention. Therefore, all Equivalent technical solutions should also belong to the scope of the disclosure of the present invention.
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