CN110471099A - A kind of ion transducer and preparation method thereof - Google Patents
A kind of ion transducer and preparation method thereof Download PDFInfo
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- CN110471099A CN110471099A CN201910574241.XA CN201910574241A CN110471099A CN 110471099 A CN110471099 A CN 110471099A CN 201910574241 A CN201910574241 A CN 201910574241A CN 110471099 A CN110471099 A CN 110471099A
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000002131 composite material Substances 0.000 claims abstract description 73
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- 229920005591 polysilicon Polymers 0.000 claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000012212 insulator Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 229910052752 metalloid Inorganic materials 0.000 claims abstract description 10
- 150000002738 metalloids Chemical class 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 13
- 238000005468 ion implantation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Pressure Sensors (AREA)
Abstract
The invention belongs to ion detection technical fields, are related to a kind of ion transducer, including silicon substrate, multiple first kind metal electrodes, multiple second metalloid electrodes, and be sequentially formed on the silicon substrate Basis insulating barrier, MULTILAYER COMPOSITE layer, polysilicon layer；Wherein, the insulating layer of composite layer by polysilicon layer and thereon is constituted, and the width of composite layer is sequentially reduced with far from silicon substrate；One electrode of multiple first kind metal electrodes is directly contacted with a side of polysilicon layer, and each of remaining electrode of multiple first metal electrodes is directly contacted with a side of one layer of composite layer respectively；One electrode of multiple second metalloid electrodes is directly contacted with another side of polysilicon layer, and each of remaining electrode of multiple second metal electrodes is directly contacted with another side of one layer of composite layer respectively；Each of the electrode of first kind and second kind electrode electrode are isolated with insulator layer each other.The resolution ratio of present invention raising ion energy detection method.
Description
Technical field
The present invention relates to ion detection technical fields more particularly to a kind of ion transducer and preparation method thereof.
Background technique
Ion implantation technique is the material modification method being introduced into the ion of dopant in solid.Due to ion implantation technique
With doping degree of purity is high, Doped ions concentration is not limited by equilirbium solid solubility, the ion concentration of injection and depth distribution are smart
Really controllable, solid temperature can unrestricted choice the features such as, be widely used the electricity in semiconductor material and photoelectric material
In terms of Properties Control.
Ion implantation dosage and ion implantation energy are two key parameters of ion implantation technique, ion implantation energy
Determine the depth of ion implanting, ion implantation energy is higher, and the depth of ion implanting is deeper.Tradition detects ion energy
Method is realized by measuring the resistivity change of silicon wafer injection zone, and error is larger.In order to overcome conventional ion to infuse
The disadvantages mentioned above for entering energy detection, application No. is the Patent Application Publication of CN201710564681.8 propose it is a kind of it is novel from
Sub- energy detection method and the device for implementing the detection method.But the ion energy detection method is asked there is also resolution ratio is low
Topic.
Summary of the invention
The present invention provides a kind of ion transducer and preparation method thereof, to improve the resolution of ion energy detection method
Rate.
In order to achieve the above object of the invention, the invention adopts the following technical scheme:
A kind of ion transducer, including silicon substrate (1), multiple first kind metal electrodes (5), multiple second metalloid electrodes
(6), and be sequentially formed on the silicon substrate (1) Basis insulating barrier (2), MULTILAYER COMPOSITE layer, polysilicon layer (7)；Wherein, multiple
It closes the insulating layer (4) of layer by polysilicon layer (3) and thereon to constitute, the width of composite layer successively subtracts with far from silicon substrate (1)
It is small；One electrode of multiple first kind metal electrodes (5) is directly contacted with a side of polysilicon layer (7), multiple first gold medals
Each of the remaining electrode for belonging to electrode (5) is directly contacted with a side of one layer of composite layer respectively；Multiple second eka-golds
An electrode for belonging to electrode (6) is directly contacted with another side of polysilicon layer (7), and multiple second metal electrodes (6) remain
Each of remaining electrode is directly contacted with another side of one layer of composite layer respectively；The electrode of first kind (5) and the second class
Each of electrode (6) electrode uses insulator layer (8) to be isolated each other.
Preferably, the Basis insulating barrier (2), the insulating layer (4) in composite layer, insulator layer (8) material
For silica, aluminium nitride or aluminium oxide.
Preferably, the Basis insulating barrier (2), the insulating layer (4) in composite layer, insulator layer (8) material
For silica.
The present invention also provides a kind of preparation methods of ion transducer, method includes the following steps:
The first step, on silicon substrate (1), be sequentially prepared Basis insulating barrier (2), first layer composite layer to n-th layer composite layer,
And polysilicon layer (7)；Wherein, the insulating layer (4) of every layer of composite layer by polysilicon layer (3) and thereon is constituted；N is greater than 1
Positive integer.
Second step is successively formed by etch process, and the width of composite layer is sequentially reduced with separate silicon substrate (1),
The width of polysilicon layer (7) is less than the width of n-th layer composite layer, and the two sides of composite layer, polysilicon layer (7) are ladder-like；
Third step prepares insulator layer (8)；
4th step is exposed and develops to the photoresist for being coated on surface, forms opposite two etching regions (a-1)；Its
In, etching region (a-1) is across insulator layer (8) and polysilicon layer (7)；
5th step is etched etching region (a-1), forms opposite two electrode districts (b-1)；Wherein, etch depth is big
In or be equal to the thickness of polysilicon layer (7), and be less than polysilicon layer (7) and n-th layer composite layer insulating layer (4) thickness it
With；
6th step is exposed and develops to the photoresist for being coated on surface, forms opposite two etching regions (a-2)；Its
In, etching region (a-2) is across insulator layer (8) and n-th layer composite layer；
7th step is etched etching region (a-2), forms opposite two electrode districts (b-2)；Wherein, etch depth is big
In or be equal to the thickness of polysilicon layer (7) and n-th layer composite layer, and less than polysilicon layer (7), n-th layer composite layer, N-1 layers
The sum of the thickness of the insulating layer (3) of composite layer；
8th step, and so on, the photoresist for being coated on surface is exposed and is developed, two opposite etching regions are formed
(a-N-i+2)；Wherein, etching region (a-N-i+2) is across insulator layer (8) and i-th layer of composite layer；To etching region (a-N-i+2)
It is etched, forms opposite two electrode districts (b-N-i+2)；Wherein, etch depth is greater than or equal to polysilicon (7) and n-th layer
To i-th layer of the sum of composite bed thickness；Wherein, i value is followed successively by N-1 ... ... 1；Until corresponding etching is deep when i value is 1
Degree is greater than or equal to the sum of the thickness of polysilicon layer (7) and n-th layer to the 1st layer of composite layer, and is less than polysilicon layer (7), n-th layer
To the 1st layer of composite layer and the sum of the thickness of Basis insulating barrier (2)；
9th step is respectively formed first kind metal electrode (5) and the second metalloid electrode in two opposite electrode districts
(6)。
Compared with prior art, the present invention beneficial effect is:
Ion transducer of the invention improves the resolution ratio of ion energy detection method, and preparation method is simple.
Detailed description of the invention
Fig. 1 is the top view of the ion transducer of the embodiment of the present invention.
Fig. 2 is the ion transducer of the embodiment of the present invention along the sectional view of Figure 1A-A ' line.
Fig. 3 is the ion transducer of the embodiment of the present invention along the sectional view of Figure 1B-B ' line.
Fig. 4-1~10 are the corresponding structural representations of each step in the preparation method of the ion transducer of the embodiment of the present invention
Figure.
Fig. 5 is the resolution ratio relatively knot of the resolution ratio of ion transducer of the present invention and the ion transducer device of the prior art
Fruit.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing to implementation of the invention
Example is described in further detail.
Fig. 1 is the top view of the ion transducer of the embodiment of the present invention, and Fig. 2-3 is that the ion of the embodiment of the present invention passes respectively
Sensor along A-A ' in Fig. 1 and B-B ' line sectional view.The ion transducer includes silicon substrate 1, multiple first kind metal electrodes
5, multiple second metalloid electrodes 6, and be sequentially formed on the silicon substrate 1 Basis insulating barrier 2, polysilicon layer 3- insulating layer
4 multiple composite layers, the polysilicon layers 7 constituted, wherein the width of composite layer is sequentially reduced, Duo Ge with far from silicon substrate 1
One electrode of a kind of metal electrode 5 and a side of polysilicon layer 7 directly contact, and multiple first kind metal electrodes 5 remain
One side of each of remaining electrode and a composite layer directly contacts, an electrode of multiple second metalloid electrodes 6
It is directly contacted with another side of polysilicon layer 7, each of remaining electrode of multiple second metalloid electrodes 6 and each
Another side of composite layer directly contacts, and each of the electrode of first kind 5 and second kind electrode 6 electrode are each other with insulation
Nitride layer 8 is isolated.
It should be noted that the material of insulating layer 4, insulator layer 8 in Basis insulating barrier 2, composite layer can be titanium dioxide
Insulating materials such as silicon, aluminium nitride, aluminium oxide but for reducing analytical error and preparation process angle, preferably silica.
In addition, composite layer is at least two layers.
Fig. 4 is one example of preparation method of ion transducer of the present invention, is illustrated by taking 2 layers of composite layer as an example.
The first step, such as Fig. 4-1, on silicon substrate 1, preparation Basis insulating barrier 2, polysilicon layer 3- insulating layer 4 constitute the
The second composite layer and polysilicon layer 7 that one composite layer, polysilicon layer 3- insulating layer 4 are constituted.The preparation method of above layers can
To refer to related art, this will not be repeated here for the embodiment of the present invention.
Second step is successively formed by etch process three times, the first composite layer and second such as Fig. 4-2,4-3 and 4-4
The width of composite layer with being sequentially reduced far from silicon substrate 1, the width of polysilicon layer 7 less than the second composite layer width, and
First composite layer, the second composite layer, polysilicon layer 7 two sides be it is ladder-like.
Third step prepares insulator layer 8 such as Fig. 4-5.The insulator layer 8 can use chemical vapor deposition or magnetic control
It is prepared by the method for sputtering.
4th step is exposed and develops to the photoresist for being coated on surface, form plasma etching area a- such as Fig. 4-6
1, wherein etching region a-1 is across insulator layer 8 and polysilicon layer 7.
5th step carries out plasma etching to etching region a-1, forms electrode district b-1 such as Fig. 4-7；Wherein, etch depth
More than or equal to the thickness of polysilicon layer 7, but it is less than the sum of the thickness of the insulating layer 3 of polysilicon layer 7 and the second composite layer.
6th step is exposed and develops to the photoresist for being coated on surface, form plasma etching area a- such as Fig. 4-8
2, wherein etching region a-2 is across insulating layer 8 and the second composite layer.
7th step carries out plasma etching to etching region a-2, forms electrode district b-2 such as Fig. 4-9；Wherein, etch depth
More than or equal to the thickness of polysilicon layer 7 and the second composite layer, but it is less than polysilicon layer 7, the second composite layer, first composite layer
The sum of the thickness of insulating layer 3.
8th step repeats the 6th step and the 7th step such as Fig. 4-10, forms electrode district b-3.
9th step forms multiple first kind metal electrodes 5, multiple second eka-golds at electrode district b-1, b-2 and b-3
Belong to electrode 6.
Fig. 5 is the resolution ratio of ion transducer of the present invention and the resolution ratio of prior art ion transducer.Wherein polysilicon
The polysilicon layer 3 of layer 7 and composite layer is with a thickness of 25nm, and the insulating layer 4 of composite layer is silicon dioxide layer, with a thickness of 5nm.
Meanwhile in order to compare with the ion transducer of the prior art, the two of one layer of 5nm are prepared on the surface of ion transducer of the invention
Silicon oxide layer.Polysilicon layer and silicon dioxide layer in the composite layer of the ion transducer of the prior art be also respectively 25nm and
5nm, structure can refer to the patent China application documents of CN201710564681.8.By taking arsenic ion injects as an example, and positive reason
Ion implanting depth peak value is in the polysilicon layer from device surface number third composite layer under condition.The ion transducer of the application
Application method is by the resistance change of the polysilicon layer where measurement ion implanting depth peak value, Lai Fanying ion implanting energy
Amount variation.So the present embodiment is the polysilicon layer resistance to monitor third composite layer.In addition, the prior art and of the invention
Ion transducer is all the change by measuring resistance, the variation of Lai Fanying ion energy.So the resolution ratio of ion transducer
It may be defined as:
K=| R1-R2 |/R1
Wherein, before K indicates that resolution ratio, R1 indicate that ion energy does not change, measured resistance；R2 indicates ion energy hair
After changing, measured resistance.
From figure 5 it can be seen that the ion that the resolution ratio of ion transducer disclosed by the invention is higher than the prior art passes
The resolution ratio of sensor.
It should be noted that detected for ease of the resistance to polysilicon layer, after polysilicon layer preparation is completed,
To the part other than its ion detection area into doping.Meanwhile in order to reduce the influence of the part other than ion pair ion detection area,
Ion barrier can also be set on the surface other than ion detection area.In addition, although the embodiment of the present invention is to detect ion
For ion when injection, but it is also suitable for other ions.
Above-described embodiment is only three layers with composite layer and is illustrated that this will not be repeated here for the composite layer of other numbers of plies.
The above is only a preferred embodiment of the present invention, it is not intended to restrict the invention.It should be pointed out that for this skill
For the those of ordinary skill in art field, without departing from the technical principles of the invention, can also make it is several improvement and
Modification, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of ion transducer, which is characterized in that including silicon substrate (1), multiple first kind metal electrodes (5), multiple second
Metalloid electrode (6), and be sequentially formed on the silicon substrate (1) Basis insulating barrier (2), MULTILAYER COMPOSITE layer, polysilicon layer
(7)；Wherein, the insulating layer (4) of composite layer by polysilicon layer (3) and thereon is constituted, and the width of composite layer is with far from silicon substrate
(1) it is sequentially reduced；One electrode of multiple first kind metal electrodes (5) is directly contacted with a side of polysilicon layer (7),
Each of remaining electrode of multiple first metal electrodes (5) is directly contacted with a side of one layer of composite layer respectively；It is more
One electrode of a second metalloid electrode (6) is directly contacted with another side of polysilicon layer (7), multiple second metal electricity
Each of remaining electrode of pole (6) is directly contacted with another side of one layer of composite layer respectively；The electrode of first kind (5) with
And each of second kind electrode (6) electrode uses insulator layer (8) to be isolated each other.
2. ion transducer according to claim 1, which is characterized in that exhausted in the Basis insulating barrier (2), composite layer
Edge layer (4), insulator layer (8) material be silica, aluminium nitride or aluminium oxide.
3. ion transducer according to claim 2, which is characterized in that exhausted in the Basis insulating barrier (2), composite layer
Edge layer (4), insulator layer (8) material be silica.
4. a kind of preparation method of ion transducer, which is characterized in that method includes the following steps:
The first step, on silicon substrate (1), be sequentially prepared Basis insulating barrier (2), first layer composite layer to n-th layer composite layer and
Polysilicon layer (7)；Wherein, the insulating layer (4) of every layer of composite layer by polysilicon layer (3) and thereon is constituted；N is just whole greater than 1
Number；
Second step is successively formed by etch process, and the width of composite layer is sequentially reduced, polycrystalline with far from silicon substrate (1)
The width of silicon layer (7) is less than the width of n-th layer composite layer, and the two sides of composite layer, polysilicon layer (7) are ladder-like；
Third step prepares insulator layer (8)；
4th step is exposed and develops to the photoresist for being coated on surface, forms opposite two etching regions (a-1)；Wherein, it loses
Area (a-1) is carved across insulator layer (8) and polysilicon layer (7)；
5th step is etched etching region (a-1), forms opposite two electrode districts (b-1)；Wherein, etch depth be greater than or
Equal to the thickness of polysilicon layer (7), and it is less than the sum of the thickness of the insulating layer (4) of polysilicon layer (7) and n-th layer composite layer；
6th step is exposed and develops to the photoresist for being coated on surface, forms opposite two etching regions (a-2)；Wherein, it loses
Area (a-2) is carved across insulator layer (8) and n-th layer composite layer；
7th step is etched etching region (a-2), forms opposite two electrode districts (b-2)；Wherein, etch depth be greater than or
Equal to the thickness of polysilicon layer (7) and n-th layer composite layer, and be less than polysilicon layer (7), n-th layer composite layer, N-1 layers it is compound
The sum of the thickness of the insulating layer (3) of layer；
8th step, and so on, the photoresist for being coated on surface is exposed and is developed, two opposite etching region (a- are formed
N-i+2)；Wherein, etching region (a-N-i+2) is across insulator layer (8) and i-th layer of composite layer；Etching region (a-N-i+2) is carried out
Etching, forms opposite two electrode districts (b-N-i+2)；Wherein, etch depth is greater than or equal to polysilicon (7) and n-th layer to i-th
The sum of the composite bed thickness of layer；Wherein, i value is followed successively by N-1 ..., and 1；Until corresponding etch depth is greater than when i value is 1
Or it is equal to the sum of the thickness of polysilicon layer (7) and n-th layer to the 1st layer of composite layer, and be less than polysilicon layer (7), n-th layer to the 1st
The composite layer of layer and the sum of the thickness of Basis insulating barrier (2)；
9th step is respectively formed first kind metal electrode (5) and the second metalloid electrode (6) in two opposite electrode districts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910574241.XA CN110471099B (en) | 2019-06-28 | 2019-06-28 | Ion sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910574241.XA CN110471099B (en) | 2019-06-28 | 2019-06-28 | Ion sensor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637701A (en) * | 2024-01-25 | 2024-03-01 | 粤芯半导体技术股份有限公司 | Semiconductor device and method for manufacturing the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379001A (en) * | 1978-07-19 | 1983-04-05 | Nippon Telegraph & Telephone Public Corp. | Method of making semiconductor devices |
| KR20010004974A (en) * | 1999-06-30 | 2001-01-15 | 김영환 | Method of manufacturing a semicondutor device |
| JP2003060207A (en) * | 2001-08-09 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| CN103050410A (en) * | 2012-10-30 | 2013-04-17 | 昆山工研院新型平板显示技术中心有限公司 | Manufacture method of low-temperature polycrystalline silicon thin film transistor and low-temperature polycrystalline silicon thin film transistor |
| CN106784018A (en) * | 2016-12-31 | 2017-05-31 | 江苏宏微科技股份有限公司 | Temperature sensing diode structure being integrated on transistor and preparation method thereof |
| CN107195566A (en) * | 2017-07-12 | 2017-09-22 | 田巍岐 | A kind of ion implantation energy monitoring method |
-
2019
- 2019-06-28 CN CN201910574241.XA patent/CN110471099B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379001A (en) * | 1978-07-19 | 1983-04-05 | Nippon Telegraph & Telephone Public Corp. | Method of making semiconductor devices |
| KR20010004974A (en) * | 1999-06-30 | 2001-01-15 | 김영환 | Method of manufacturing a semicondutor device |
| JP2003060207A (en) * | 2001-08-09 | 2003-02-28 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same |
| CN103050410A (en) * | 2012-10-30 | 2013-04-17 | 昆山工研院新型平板显示技术中心有限公司 | Manufacture method of low-temperature polycrystalline silicon thin film transistor and low-temperature polycrystalline silicon thin film transistor |
| CN106784018A (en) * | 2016-12-31 | 2017-05-31 | 江苏宏微科技股份有限公司 | Temperature sensing diode structure being integrated on transistor and preparation method thereof |
| CN107195566A (en) * | 2017-07-12 | 2017-09-22 | 田巍岐 | A kind of ion implantation energy monitoring method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637701A (en) * | 2024-01-25 | 2024-03-01 | 粤芯半导体技术股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN117637701B (en) * | 2024-01-25 | 2024-05-03 | 粤芯半导体技术股份有限公司 | Semiconductor device and method for manufacturing the same |
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| CN110471099B (en) | 2023-03-10 |
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