CN110459479B - Barrier layer deposition method, bottom metal film of gold bump and preparation method thereof - Google Patents
Barrier layer deposition method, bottom metal film of gold bump and preparation method thereof Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 263
- 238000000151 deposition Methods 0.000 title claims abstract description 98
- 239000010931 gold Substances 0.000 title claims abstract description 34
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims description 28
- 238000013459 approach Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000012360 testing method Methods 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 49
- 230000035882 stress Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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Abstract
The invention provides a barrier layer deposition method, a bottom metal film of a gold bump and a preparation method thereof, wherein the deposition method is used for forming a barrier layer group on a substrate and comprises the following steps of forming the barrier layer group on the substrate, and the steps comprise: sequentially depositing at least three superposed barrier layers along the direction far away from the substrate to form a barrier layer group; wherein, the process air pressure adopted when the barrier layer of the uppermost layer and the barrier layer of the lowermost layer are deposited is lower than the process air pressure adopted when the rest barrier layers are deposited, so that the compactness of the barrier layer of the uppermost layer and the barrier layer of the lowermost layer is improved. The barrier layer deposition method provided by the invention can successfully pass the PCT test, and does not need to adopt higher process temperature, thereby avoiding the occurrence of events such as TiW target off-target and the like which seriously affect the product yield.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a barrier layer deposition method, a bottom metal film of a gold bump and a preparation method thereof.
Background
In the mainstream market, Gold bump (Gold Bumping) technology is widely applied in the field of Integrated Circuit (IC) packaging of Liquid Crystal Display (LCD), and in the Gold bump preparation process, it is particularly critical to prepare a good bottom metal film (UBM).
Fig. 1 is a structural diagram of a conventional gold bump. Referring to fig. 1, the process of fabricating the gold bump is as follows: a barrier layer 2 is first formed on a substrate 1 to serve as an underlying metal film. And then, photoresist coating, exposure, electroplating and other steps are carried out to finish the manufacture of the gold bump 3, and finally, the redundant barrier layer 2 is removed by wet etching.
Fig. 2 is a structural diagram of a conventional barrier layer, and referring to fig. 2, the barrier layer includes a TiW layer 21 and an Au layer 22 disposed on the TiW layer 21. Among them, the TiW layer 21 serves to adhere to the substrate 1 and to isolate the Au layer 22. The Au layer 22 serves as a seed layer for Au. In the process of manufacturing the TiW layer 21, higher process air pressure is generally adopted to enable the stress of the TiW layer 21 to meet the requirement, even if the stress reaches between-400 Mpa and-0 Mpa; meanwhile, in the process of manufacturing the Au layer 22, a low process pressure is generally used to maintain the stress of the Au layer 22 between 0Mpa and 200Mpa, so as to control the overall stress of the entire barrier layer between-100 Mpa and 0Mpa to meet the process requirements.
However, in practical application, the prior art has the following disadvantages:
firstly, because the high process pressure (greater than 15 mtorror) is used for manufacturing the TiW layer 21, the TiW material is very loose, and the TiW grains are large, so that the TiW layer cannot pass the PCT (pressure Cookiest, high-pressure accelerated aging life test).
Secondly, in order to improve the compactness of the film, the whole process for manufacturing the TiW layer 21 needs to adopt a higher process temperature, which is likely to generate events that the yield of the product is seriously affected by the target miss of the TiW target material and the like in the long-term continuous production.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a barrier layer deposition method, a bottom metal film of a gold bump and a preparation method thereof, which can successfully pass a PCT test and do not need to adopt higher process temperature, thereby avoiding the occurrence of the events of TiW target off-target and the like which seriously affect the product yield.
To achieve the object of the present invention, there is provided a barrier layer deposition method for forming a barrier layer set on a substrate, the barrier layer deposition method including a step of forming a barrier layer set on a substrate, the step including:
sequentially depositing at least three superposed barrier layers along the direction far away from the substrate to form the barrier layer group; wherein, the process air pressure adopted when the barrier layer of the uppermost layer and the barrier layer of the lowermost layer are deposited is lower than the process air pressure adopted when the rest barrier layers are deposited, so that the compactness of the barrier layer of the uppermost layer and the barrier layer of the lowermost layer is improved.
Optionally, the overall stress of the barrier layer group is adjusted by adjusting a process gas pressure used in depositing each barrier layer, and/or by adjusting a deposition thickness of each barrier layer.
Optionally, the process pressure used for depositing the uppermost barrier layer and the lowermost barrier layer is less than 3 mTorr.
Optionally, the process pressure used to deposit the remaining barrier layers is greater than 10 mTorr.
Optionally, depositing a first barrier layer, a second barrier layer and a third barrier layer on the substrate in sequence;
reducing the process air pressure adopted during the deposition of the first barrier layer and the third barrier layer to enable the overall stress of the barrier layer group to approach a negative value; or the whole stress of the barrier layer group approaches to a positive value by increasing the process air pressure adopted during the deposition of the second barrier layer.
Optionally, depositing a first barrier layer, a second barrier layer and a third barrier layer on the substrate in sequence;
reducing the deposition thickness of the second barrier layer and simultaneously increasing the deposition thicknesses of the first barrier layer and the third barrier layer to enable the overall stress of the barrier layer group to approach a negative value; or the overall stress of the barrier layer group approaches a positive value by increasing the deposition thickness of the second barrier layer and simultaneously reducing the deposition thicknesses of the first barrier layer and the third barrier layer.
Optionally, after depositing the first barrier layer and before depositing the second barrier layer, the following steps are performed:
adjusting the process gas introduced into the process chamber to maintain the pressure in the process chamber at the process gas pressure used in depositing the second barrier layer;
and, after depositing the second barrier layer, and before depositing the third barrier layer, performing the steps of:
and adjusting the process gas introduced into the process chamber so as to keep the pressure in the process chamber at the process gas pressure adopted during the deposition of the third barrier layer.
Optionally, the flow rate of the process gas is 20-40 sccm.
As another technical scheme, the invention also provides a preparation method of the bottom metal film of the gold bump, which comprises the steps of depositing a barrier layer group on a substrate by adopting the barrier layer deposition method provided by the invention; the barrier layer is TiW;
depositing a seed layer on the uppermost barrier layer; the seed crystal layer is Au.
As another technical scheme, the invention also provides a bottom metal film of the gold bump, which is prepared by adopting the preparation method provided by the invention.
The invention has the following beneficial effects:
the invention provides a barrier layer deposition method for forming a barrier layer group on a substrate, which comprises the following steps of: sequentially depositing at least three superposed barrier layers along the direction far away from the substrate to form a barrier layer group; wherein, the process air pressure adopted when the uppermost barrier layer and the lowermost barrier layer are deposited is lower than that adopted when the rest barrier layers are deposited, so that the compactness of the uppermost barrier layer and the lowermost barrier layer is improved. The process pressure for depositing the uppermost barrier layer and the lowermost barrier layer is lower, so that the compactness of the uppermost barrier layer and the lowermost barrier layer can be improved, the adhesion between the lowermost barrier layer and the substrate can be improved, and the water vapor entering the uppermost barrier layer can be reduced, so that the seed crystal layer can be prevented from falling off from the uppermost barrier layer.
According to the bottom metal film of the gold bump and the preparation method thereof, the PCT test can be successfully passed by adopting the barrier layer deposition method, and higher process temperature is not required, so that the occurrence of the events of target off-target and the like which seriously affect the product yield can be avoided.
Drawings
FIG. 1 is a diagram of a conventional gold bump;
FIG. 2 is a structural view of a conventional barrier layer;
FIG. 3A is a block flow diagram of a method for depositing a barrier layer according to the present invention;
FIG. 3B is a block diagram of a barrier layer obtained by the barrier layer deposition method of the present invention;
FIG. 4 is a block diagram of a barrier layer obtained using a barrier layer deposition process provided by an embodiment of the present invention;
FIG. 5 is a block diagram of a process for forming barrier layers;
fig. 6 is a graph of the overall stress of a barrier layer as a function of process gas pressure.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the barrier layer deposition method, the metal film of the gold bump and the preparation method thereof provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 3A and 3B together, the barrier layer deposition method provided by the present invention is used to form a barrier layer group on a substrate. The method includes a step S1 of forming a barrier layer group on a substrate, the step S1 including:
at least three stacked barrier layers are deposited sequentially in a direction away from the substrate 5 to form a group of barrier layers.
Wherein the three barrier layers are respectively an uppermost barrier layer 41, a lowermost barrier layer 43 and the remaining barrier layers (42 i.., 42i + n) therebetween. Further, the process gas pressure for depositing the uppermost barrier layer 41 and the lowermost barrier layer 43 is lower than the process gas pressure for forming the remaining barrier layers (42 i.., 42i + n) to improve the denseness of the uppermost barrier layer 41 and the lowermost barrier layer 43.
Preferably, the process pressure for depositing the uppermost barrier layer 41 and the lowermost barrier layer 43 is less than 3mTorr, so that the compactness of the uppermost barrier layer 41 and the lowermost barrier layer 43 can meet the requirement, i.e., the effect of small and compact grains is achieved, the adhesion between the lowermost barrier layer 43 and the substrate 5 is increased, the water vapor entering the uppermost barrier layer 41 is reduced, and the seed layer 6 can be prevented from falling off from the uppermost barrier layer 41.
In addition, the remaining barrier layers (42 i.., 42i + n) are preferably deposited using a process gas pressure greater than 10mTorr to obtain a relatively less dense barrier layer that can function to adjust the overall stress of the barrier layer stack.
In practical applications, each of the barrier layers may be TiW.
Optionally, after the step S1 is completed, the method further includes:
the seed layer 6 is formed on the uppermost barrier layer 43.
The seed layer 6 is Au.
By using a plurality of barrier layers and making the process pressure for depositing the uppermost barrier layer 41 and the lowermost barrier layer 43 lower than the process pressure for depositing the remaining barrier layers (42 i., 42i + n), the compactness of the uppermost barrier layer 41 and the lowermost barrier layer 43 can be improved, so that the adhesion between the lowermost barrier layer 43 and the substrate 5 can be increased, the water vapor entering the uppermost barrier layer 41 can be reduced, and the seed layer 6 can be prevented from falling off from the uppermost barrier layer 41. Therefore, the barrier layer prepared by the barrier layer deposition method provided by the invention can successfully pass the PCT test without adopting higher process temperature, thereby avoiding the occurrence of events such as target off-target and the like which seriously affect the product yield.
In addition, the density of the barrier layer obtained by the barrier layer deposition method provided by the invention is far higher than that of a film obtained in the prior art, so that the adaptability of the barrier layer to target materials and deposition process equipment is higher, and the barrier layer deposition method can be applied to deposition process equipment produced by different manufacturers and different types of target materials.
Preferably, referring to fig. 6, the abscissa is the process air pressure; the ordinate is the bulk stress of the barrier layer stack. As can be seen from the curve of the overall stress of the barrier layer group along with the process gas pressure shown in fig. 6, the overall stress of the barrier layer group approaches a positive value as the process gas pressure is higher, that is, the value of the overall stress gradually increases to zero or above. Conversely, the lower the process gas pressure, the more negative the overall stress of the barrier layer set, i.e., the value of the overall stress gradually decreases to zero or below zero. Based on this, by setting different process air pressures for forming each barrier layer, the overall stress of the barrier layer group can be adjusted to reach an ideal value. By ideal, it is meant that the sum of the bulk stress of the barrier layer stack and the stress of the seed layer approaches zero.
In addition, since the thickness variation of each barrier layer can also affect the overall stress of the barrier layer group, that is, the greater the thickness of the uppermost barrier layer 41 and the lowermost barrier layer 43, and the smaller the sum of the thicknesses of the remaining barrier layers (42 i., 42i + n) therebetween, the more negative the overall stress of the barrier layer group becomes; conversely, the smaller the thickness of the uppermost barrier layer 41 and the lowermost barrier layer 43, the greater the sum of the thicknesses of the remaining barrier layers (42 i.., 42i + n) lying therebetween, the more positive the overall stress of the barrier layer group approaches. Based on the above, the overall stress of the barrier layer group is adjusted to reach a desired value by setting different thicknesses of the respective barrier layers.
In practical application, only different process air pressures used for forming the barrier layers may be set, or only different thicknesses of the barrier layers may be set, or different process air pressures used for forming the barrier layers and different thicknesses of the barrier layers may be set, respectively, to adjust the overall stress of the barrier layer group to achieve an ideal value.
The following describes in detail a specific embodiment of the barrier layer deposition method provided by the present invention. Referring to fig. 4, in the present embodiment, a first barrier layer 43, a second barrier layer 42 and a third barrier layer 41 are sequentially deposited on a substrate 5. Moreover, the process air pressure for depositing the first barrier layer 43 and the third barrier layer 41 is lower than the process air pressure for depositing the second barrier layer 42, so that the compactness of the first barrier layer 43 and the third barrier layer 41 is higher, the adhesion between the first barrier layer 43 and the substrate 5 is increased, the water vapor entering the third barrier layer 41 is reduced, the seed crystal layer 6 can be prevented from falling off from the uppermost barrier layer 41, the PCT test can be successfully passed, the higher process temperature is not required, and the events that the yield of products is seriously affected by the target falling off and the like can be avoided.
Preferably, the overall stress of the barrier layer group, i.e., the first barrier layer 43, the second barrier layer 42, and the third barrier layer 41, is made to approach a negative value within a fixed range, such as-200 Mpa to 0Mpa, by reducing the process gas pressure applied in steps S10 and S30. Alternatively, the overall stress of the barrier layer group may be made to approach a positive value by increasing the process pressure used in step S20.
And/or, by reducing the deposition thickness of the second barrier layer 42, while increasing the deposition thickness of the first and third barrier layers 43, 41, the overall stress of the barrier layer group approaches a negative value; alternatively, the overall stress of the barrier layer group may be made to approach a positive value by increasing the deposition thickness of the second barrier layer 42 while decreasing the deposition thickness of the first barrier layer 43 and the third barrier layer 41. This contributes to improvement in film adhesion.
It should be noted that the above-mentioned lowering or increasing of the process pressure means that a relatively low or relatively high process pressure is used when setting the process pressure, for example, the relatively low process pressure is a pressure value within a range of less than 3mTorr, the relatively high process pressure is a pressure value within a range of more than 10mTorr, and the above-mentioned increasing or decreasing of the deposition thickness of the barrier layer means that a larger or smaller deposition thickness of the barrier layer is used when setting the deposition thickness of the barrier layer.
The overall stress of first barrier layer 43, second barrier layer 42, and third barrier layer 41 is adjusted to a desired value by adjusting the process gas pressure used in depositing first barrier layer 43, second barrier layer 42, and third barrier layer 41, and/or by adjusting the deposition thickness of first barrier layer 43, second barrier layer 42, and third barrier layer 41.
Preferably, after the deposition of the first barrier layer 43, and before the deposition of the second barrier layer 42, the following steps are carried out:
the process gas introduced into the process chamber is adjusted to maintain the pressure within the process chamber at the process gas pressure used during deposition of the second barrier layer 42, thereby ensuring that the film properties of the second barrier layer 42 meet the process requirements.
And, after depositing the second barrier layer 42, and before depositing the third barrier layer 41, performing the steps of:
the process gas introduced into the process chamber is adjusted to maintain the pressure in the process chamber at the process gas pressure used during deposition of the third barrier layer 41, thereby ensuring that the film properties of the third barrier layer 41 meet the process requirements.
Preferably, the flow rate of the process gas is 20-40 sccm, and preferably 30sccm, so as to ensure normal starting.
Specific methods for forming each barrier layer are described in detail below. Specifically, as shown in fig. 5, forming each barrier layer includes the steps of:
s100, introducing process gas into the process chamber, and simultaneously opening a valve for discharging the process gas in the process chamber;
the flow of the process gas discharged from the process chamber is regulated by controlling the valve, so that the air pressure in the process chamber can reach a preset value;
s200, starting a direct current power supply to excite the process gas in the process chamber to form plasma;
and S300, depositing to form a barrier layer.
In step S200 and step S300, the valve is always kept in an open state.
Preferably, in the step S100, the flow rate of the process gas is 10 to 30 sccm; in the step S200, the flow rate of the process gas is 15-35 sccm; the output power of the direct current power supply is 400-600W; in the step S300, the output power of the DC power supply is 2000-4000W.
The following is a specific process recipe of the above barrier layer deposition method:
step 1, introducing process gas into the process chamber, and simultaneously opening a valve for discharging the process gas in the process chamber. The process parameters adopted in the step 1 are as follows: the process gas is argon, and the flow rate is 6 sccm; the process time was 3 s.
And 2, starting a direct current power supply to excite the process gas in the process chamber to form plasma. The process parameters adopted in the step 2 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 500W; the process time was 2 s.
And 3, depositing to form a first barrier layer 43. The process parameters adopted in the step 3 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 3000W; the process time was 30 s.
And step 4, introducing a process gas into the process chamber so as to keep the pressure in the process chamber at the process gas pressure for depositing the second barrier layer 42. The technological parameters adopted in the step 4 are as follows: the process gas is argon, and the flow rate is 30 sccm; the valve is kept in an open state; turning off the direct current power supply; the process time was 30 s.
And 5, maintaining the conveying of the process gas. The process parameters adopted in the step 5 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the process time was 3 s.
And 6, starting a direct current power supply to excite the process gas in the process chamber to form plasma. The process parameters adopted in the step 6 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 500W; the process time was 2 s.
And 7, depositing to form a second barrier layer 42. The process parameters adopted in the step 7 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 3000W; the process time was 51 s.
And 8, introducing process gas into the process chamber to keep the pressure in the process chamber at the process gas pressure for depositing the third barrier layer 41. The process parameters adopted in the step 8 are as follows: the process gas is argon, and the flow rate is 6 sccm; the valve is kept in an open state; turning off the direct current power supply; the process time was 10 s.
And 9, maintaining the conveying of the process gas. The process parameters adopted in the step 9 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the process time was 3 s.
And step 10, starting a direct current power supply to excite the process gas in the process chamber to form plasma. The process parameters adopted in the step 10 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 500W; the process time was 2 s.
And 11, depositing to form a third barrier layer 41. The process parameters adopted in the step 11 are as follows: the flow rate of the process gas is kept constant; the valve is kept in an open state; the output power of the direct current power supply is 3000W; the process time was 30 s.
Step 12, turning off a direct current power supply; stopping the delivery of the process gas; the valve is closed.
Experiments show that the barrier layer obtained by adopting the process formula can successfully pass the PCT verification.
As another technical scheme, the invention also provides a preparation method of the bottom metal film of the gold bump, which comprises the steps of depositing a barrier layer group on a substrate by adopting the barrier layer deposition method provided by the invention; the barrier layer is TiW.
And, depositing a seed layer on the uppermost barrier layer; the seed crystal layer is Au.
According to the preparation method of the bottom layer metal film of the gold bump, the PCT test can be successfully passed by adopting the barrier layer deposition method, and higher process temperature is not required, so that the occurrence of the events of target off-target and the like which seriously affect the product yield can be avoided.
As another technical solution, the present invention further provides a bottom metal film of a gold bump, which is manufactured by the method for manufacturing the bottom metal film of a gold bump according to the present invention.
The bottom metal film of the gold bump provided by the invention is prepared by the preparation method of the bottom metal film of the gold bump, can successfully pass the PCT test, and does not need to adopt higher process temperature, thereby avoiding the occurrence of the events of target off-target and the like which seriously affect the product yield.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. A method of depositing a barrier layer for forming a set of barrier layers on a substrate, the method comprising the step of forming a set of barrier layers on a substrate, the step comprising:
sequentially depositing at least three superposed barrier layers along the direction far away from the substrate to form the barrier layer group; wherein, the process air pressure adopted when the barrier layer of the uppermost layer and the barrier layer of the lowermost layer are deposited is lower than that adopted when the rest barrier layers are deposited, so as to improve the compactness of the barrier layer of the uppermost layer and the barrier layer of the lowermost layer;
the method comprises the following steps of depositing a first barrier layer, a second barrier layer and a third barrier layer on a substrate in sequence, and reducing process air pressure adopted during deposition of the first barrier layer and the third barrier layer to enable the overall stress of the barrier layer group to approach a negative value; or, the whole stress of the barrier layer group approaches to a positive value by improving the process air pressure adopted during the deposition of the second barrier layer;
or, sequentially depositing a first barrier layer, a second barrier layer and a third barrier layer on the substrate; reducing the deposition thickness of the second barrier layer and simultaneously increasing the deposition thicknesses of the first barrier layer and the third barrier layer to enable the overall stress of the barrier layer group to approach a negative value; or the overall stress of the barrier layer group approaches a positive value by increasing the deposition thickness of the second barrier layer and simultaneously reducing the deposition thicknesses of the first barrier layer and the third barrier layer.
2. The barrier layer deposition method of claim 1, wherein the overall stress of the barrier layer group is adjusted by adjusting a process gas pressure used in depositing each barrier layer and/or by adjusting a deposition thickness of each barrier layer.
3. The method of claim 1, wherein the process gas pressure used to deposit the uppermost barrier layer and the lowermost barrier layer is less than 3 mTorr.
4. The method of claim 1 wherein the remaining barrier layers are deposited using a process gas pressure greater than 10 mTorr.
5. The barrier layer deposition method of claim 1, wherein the following steps are performed after depositing the first barrier layer and before depositing the second barrier layer:
adjusting the process gas introduced into the process chamber to maintain the pressure in the process chamber at the process gas pressure used in depositing the second barrier layer;
and, after depositing the second barrier layer, and before depositing the third barrier layer, performing the steps of:
and adjusting the process gas introduced into the process chamber so as to keep the pressure in the process chamber at the process gas pressure adopted during the deposition of the third barrier layer.
6. The method of claim 5, wherein the flow rate of the process gas is 20-40 sccm.
7. A method for preparing an underlying metal film of a gold bump, which comprises depositing a barrier layer group on a substrate by using the barrier layer deposition method of any one of claims 1 to 6; the barrier layer is TiW;
depositing a seed layer on the uppermost barrier layer; the seed crystal layer is Au.
8. An underlying metal film of a gold bump, characterized by being produced by the production method according to claim 7.
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| PCT/CN2019/076740 WO2019214326A1 (en) | 2018-05-07 | 2019-03-01 | Deposition method, gold bump underlayer metal film and preparation method therefor |
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| JP2000100852A (en) * | 1998-09-25 | 2000-04-07 | Seiko Epson Corp | Semiconductor device and method of manufacturing the same |
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| US7071014B2 (en) * | 2002-10-30 | 2006-07-04 | Amberwave Systems Corporation | Methods for preserving strained semiconductor substrate layers during CMOS processing |
| US8003512B2 (en) * | 2009-02-03 | 2011-08-23 | International Business Machines Corporation | Structure of UBM and solder bumps and methods of fabrication |
| JP5660216B2 (en) * | 2011-07-15 | 2015-01-28 | 株式会社村田製作所 | Thin film device and method for manufacturing thin film device |
| CN106783800B (en) * | 2015-11-19 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Barrier layer of chip and preparation method thereof |
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| CN1125999A (en) * | 1994-02-18 | 1996-07-03 | 艾利森电话股份有限公司 | Electromigration-resistant metallization structures for interconnection with RF reactive sputtered titanium-tungsten and gold microcircuits |
| JP2000100852A (en) * | 1998-09-25 | 2000-04-07 | Seiko Epson Corp | Semiconductor device and method of manufacturing the same |
| CN101548030A (en) * | 2006-08-30 | 2009-09-30 | 朗姆研究公司 | Self assembled monolayer for improving adhesion between copper and barrier layer |
| JP2009071342A (en) * | 2009-01-08 | 2009-04-02 | Eudyna Devices Inc | Semiconductor device |
| CN104183481A (en) * | 2014-08-27 | 2014-12-03 | 上海华力微电子有限公司 | Method for improving deposition quality of metal barrier layer |
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| CN110459479A (en) | 2019-11-15 |
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