CN110459457A - A kind of application method of vacuum precleaning device and forming method, vacuum precleaning device - Google Patents
A kind of application method of vacuum precleaning device and forming method, vacuum precleaning device Download PDFInfo
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- CN110459457A CN110459457A CN201910763602.5A CN201910763602A CN110459457A CN 110459457 A CN110459457 A CN 110459457A CN 201910763602 A CN201910763602 A CN 201910763602A CN 110459457 A CN110459457 A CN 110459457A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000001179 sorption measurement Methods 0.000 claims abstract description 67
- 239000002131 composite material Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 210
- 238000002161 passivation Methods 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 14
- 239000006227 byproduct Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning In General (AREA)
Abstract
The application method of a kind of vacuum precleaning device and forming method, vacuum precleaning device, vacuum precleaning device includes: cavity wall, the power connection structure connecting with the cavity wall；Microscope carrier, the microscope carrier have loading end, and the microscope carrier is fixedly connected with the cavity wall；Baffle between the microscope carrier edge and the cavity wall, the baffle are detachably connected with the cavity wall and the microscope carrier respectively；Adsorption plate, the adsorption plate includes substrate and the several layers composite layer positioned at substrate surface, and the several layers composite layer is overlapped along perpendicular to adsorption plate surface direction, the adsorption plate is detachably connected with the baffle, and the composite aspect of the adsorption plate is towards the loading end of the microscope carrier.The performance of the vacuum precleaning device is improved.
Description
Technical field
The present invention relates to vacuum plant field more particularly to a kind of vacuum precleaning device and forming method thereof, vacuum are pre-
The application method of cleaning device.
Background technique
Photovoltaic industry, semiconductor, often use in liquid crystal display panel industry vacuum precleaning device come to product to be processed into
Row surface cleaning, to improve the surface cleanness of product to be processed, to guarantee the normal of product function to be processed.
In order to keep the good cleaning capacity of vacuum precleaning device, vacuum precleaning device needs time-based maintenance, vacuum
Component in precleaning device needs timing to replace and clean, and avoids influencing the reaction environment in vacuum precleaning device cavity.
However, the existing maintenance mode to vacuum precleaning device need to be improved.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of vacuum precleaning device and forming method thereof, vacuum precleaning to fill
The application method set, to improve the performance of vacuum precleaning device.
In order to solve the above technical problems, technical solution of the present invention provides a kind of vacuum precleaning device, comprising: cavity wall, with
The power connection structure of the cavity wall connection；Microscope carrier, the microscope carrier have loading end, the microscope carrier and the fixed company of the cavity wall
It connects；Baffle between the microscope carrier edge and the cavity wall, the baffle are removable with the cavity wall and the microscope carrier respectively
Unload connection；Adsorption plate, the adsorption plate includes substrate and the several layers composite layer positioned at substrate surface, and the several layers are compound
Layer is overlapped along perpendicular to adsorption plate surface direction, the adsorption plate is detachably connected with the baffle, and the adsorption plate is answered
Loading end of the conjunction level towards the microscope carrier.
Optionally, the single layer composite layer includes passivation layer and the oxide layer positioned at passivation layer surface；The passivation layer arrives
The distance of the substrate surface is less than the oxide layer to the distance of the substrate surface.
Optionally, the thickness range of the passivation layer is 10nm~500nm；The thickness range of the oxide layer be 30nm~
1×105nm。
Optionally, the stacking number of the composite layer is greater than or equal to 2.
Optionally, the material of the passivation layer includes silicon nitride, silicon oxynitride, silicon carbide, fire sand or aluminium oxide；Institute
The material for stating oxide layer includes silica.
Optionally, the thickness range of the adsorption plate is 1cm~4cm.
Optionally, the shape of the adsorption plate includes arc.
Correspondingly, technical solution of the present invention also provides a kind of method for forming any of the above-described vacuum precleaning device, comprising:
Initial cleanness device is provided, the initial cleanness device includes: cavity wall, the power connection structure connecting with the cavity wall；Microscope carrier,
The microscope carrier has loading end, and the microscope carrier is fixedly connected with the cavity wall；Between the microscope carrier edge and the cavity wall
Baffle, the baffle is detachably connected with the cavity wall and the microscope carrier respectively；Substrate, the substrate and the baffle are removable
Unload connection；Several layers composite layer, loading end of the several layers composite aspect towards the microscope carrier are formed in the substrate surface.
Optionally, the forming method of the composite layer includes: to form passivation layer in the substrate surface；In the passivation layer
Surface forms oxide layer.
Optionally, the forming method of the passivation layer includes chemical vapor deposition process or atom layer deposition process.
Optionally, the formation process of the oxide layer includes chemical vapor deposition process or atom layer deposition process.
Correspondingly, technical solution of the present invention also provides a kind of method using any of the above-described vacuum precleaning device, comprising:
Any of the above-described vacuum precleaning device is provided；The adsorption plate is cleaned, one layer for removing the absorption plate surface is compound
Layer.
Optionally, the method for removing the composite layer includes: the oxide layer of removal absorption plate surface, until exposing described
Passivation layer；The passivation layer exposed described in removal, until exposing next layer of composite layer.
Optionally, the technique for removing the oxide layer includes wet-etching technology.
Optionally, the technique for removing the passivation layer includes wet-etching technology.
Compared with prior art, technical solution of the present invention has the advantages that
Vacuum precleaning device in technical solution of the present invention, if the adsorption plate includes substrate and positioned at substrate surface
Dried layer composite layer, and the several layers composite layer is overlapped along perpendicular to adsorption plate surface direction, the material that the composite layer is selected
There is preferable adsorption capacity simultaneously and convenient for clean ability, then the composite layer is in the vacuum precleaning device
Adsorption capacity is preferable, while during cleaning the adsorption plate, the composite layer is easily removed and as by-product is arranged
Out, so that adsorption plate is convenient for cleaning.
Further, the membrane structure includes passivation layer and the oxide layer positioned at passivation layer surface, the oxide layer and institute
Passivation layer is stated with different etching selection ratios, thus when cleaning the adsorption plate, the oxide layer and the passivation layer energy
It is enough mutually to keep good pattern so that the adsorption plate is easy to be cleaned as stop-layer.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the vacuum precleaning device of an embodiment；
Fig. 2 to Fig. 4 is the schematic diagram of the section structure of the vacuum precleaning device forming process of the embodiment of the present invention；
Fig. 5 to Fig. 6 is the schematic diagram of the section structure of the vacuum precleaning device use process of the embodiment of the present invention.
Specific embodiment
As stated in the background art, the existing maintenance mode to vacuum precleaning device need to be improved.Now in conjunction with specific
Embodiment carry out analytic explanation.
Fig. 1 is the schematic diagram of the section structure of the vacuum precleaning device of an embodiment.
Referring to FIG. 1, the vacuum precleaning device includes cavity wall 100, the power supply connection knot being connect with the cavity wall 100
Structure 101；Microscope carrier 102, the microscope carrier 102 are connect with the cavity wall 100 by fixed link 103；Baffle 104, the baffle 104 divide
It is not fixedly connected with the cavity wall 100 and the microscope carrier 102；Adsorption plate 105, the adsorption plate 105 and the baffle 104 are removable
Unload connection.
In the vacuum precleaning device, the microscope carrier 102 is used for carrying substrate to be cleaned, the adsorption plate 105
In the byproduct particles that absorption is sputtered from the substrate surface to be cleaned, the byproduct particles is avoided to be sputtered onto vacuum chamber
After body, the substrate to be cleaned can be polluted again, while cavity wall 100 can also be polluted, and the stabilization of manufacturing process is unfavorable for.
However, the adsorption plate 105, after adsorbing certain particle, 105 surface of adsorption plate declines the adhesion strength of particle,
It can just be reused after need to cleaning, after being cleaned multiple times, the roughness on 105 surface of adsorption plate changes, to described
The adsorption capacity of byproduct particles is greatly reduced；Meanwhile being cleaned multiple times so that the thickness uniformity of the adsorption plate 105 is deteriorated,
The adsorption plate 105 after pattern changes changes the reaction condition in the vacuum precleaning device, from
And influence is produced on the technology stability of processing procedure.
To solve the above-mentioned problems, technical solution of the present invention provides a kind of vacuum precleaning device and forming method thereof, true
The application method of empty precleaning device, by forming several layers composite layer, the substrate and described several in the substrate surface
Layer composite layer forms the adsorption plate, and the adsorption plate has good adsorption capacity convenient for cleaning.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Fig. 2 to Fig. 4 is the schematic diagram of the section structure of the vacuum precleaning device forming process of the embodiment of the present invention.
Referring to FIG. 2, providing initial cleanness device.
The initial cleanness device includes: cavity wall 200, the power connection structure 201 connecting with the cavity wall 200；Microscope carrier
202, the microscope carrier 202 has loading end, and the microscope carrier 202 is fixedly connected with the cavity wall 200；Positioned at 202 side of microscope carrier
Baffle 204 between edge and the cavity wall 200, the baffle 204 are detachable with the cavity wall 200 and the microscope carrier 202 respectively
Connection；Substrate 205, the substrate 205 are detachably connected with the baffle 204.
The cavity wall 200 is used to form vacuum sealing cavity, provides reaction cavity for the cleaning procedure.
The material of the cavity wall 200 includes metal.In the present embodiment, the material of the cavity wall 200 include titanium alloy or
Aluminium alloy.
The power connection structure 201 provides electricity for being electrically connected with external power supply for the intracorporal ion of the reaction chamber
, so that the ion is moved according to certain electric field track.
In the present embodiment, the power connection structure 201 includes conductive coil, the conductive coil and DC power supply,
Intermediate frequency power supply or radio-frequency power supply electrical connection.
The microscope carrier 202 is fixedly connected by connecting rod 203 with the cavity wall 200, and the mode being fixedly connected is weldering
It connects.
The loading end of the microscope carrier 202 is for carrying the substrate to be cleaned, to clean to the substrate to be cleaned
Reaction.
The material of the microscope carrier 202 includes metal.In the present embodiment, the material of the microscope carrier 202 include titanium alloy or
Aluminium alloy.
The baffle 204 between 202 edge of microscope carrier and the cavity wall 200, and the baffle 204 respectively with institute
It states cavity wall 200 and the microscope carrier 202 is detachably connected, the baffle 204 avoids dirt for stop portions byproduct of reaction particle
Contaminate the cavity wall 200.
The material of the baffle 204 includes metal.In the present embodiment, the material of the baffle 204 include titanium alloy or
Aluminium alloy.
In the present embodiment, 204 surface of baffle has also carried out blasting treatment, so that 204 rough surface of the baffle
Degree becomes larger, with preferably absorbed portion byproduct of reaction particle.
The substrate 205 forms several composite layers offer structural supports on 205 surface of substrate for subsequent.
In the present embodiment, the material of the substrate 205 includes silica.
In the present embodiment, the shape of the adsorption plate includes arc.The adsorption plate of the arc is easily installed and cleans.
Fig. 3 and Fig. 4 are please referred to, Fig. 4 is the details enlarged drawing of region A in Fig. 3, is formed on 205 surface of substrate several
Layer composite layer, loading end of the several layers composite aspect towards the microscope carrier 202.
In the present embodiment, the several layers composite layer is overlapped along perpendicular to 205 surface direction of substrate.
The forming method of the composite layer includes: to form passivation layer 206 on 205 surface of substrate；In the passivation layer
206 surfaces form oxide layer 207.
The composite layer be used to adsorb as reactive ion bombard described in be placed in the substrate to be cleaned of 202 loading end of microscope carrier
And the byproduct particles sputtered, it is sputtered onto the vacuum cavity to avoid the byproduct particles, to pollute institute again
State substrate to be cleaned and cavity wall 200.
The several layers composite layer on 205 surface of the substrate 205 and the substrate forms the adsorption plate.
One layer of composite layer includes passivation layer 206 and the oxide layer 207 positioned at 206 surface of passivation layer.
In the present embodiment, the thickness range of the adsorption plate is 1cm~4cm.
In the present embodiment, the thickness range of the passivation layer is 10nm~500nm.
If the thickness of the passivation layer is too thick, taking a long time for the passivation layer is removed, is unfavorable for mentioning for production efficiency
It rises；If the thickness of the passivation layer is too small, the passivation layer is inadequate to the degree of protection of lower layer's oxide layer, in removal upper layer oxygen
During changing layer, the oxide layer of passivation layer lower layer can be caused to damage.
In the present embodiment, the thickness range of the oxide layer is 30nm~1 × 105nm。
If the thickness of the oxide layer is too small, the adsorption capacity of the oxide layer can weaken quickly, need frequently to described
Adsorption plate is cleaned, and process flow is increased；The time-consuming if thickness of the oxide layer is too thick, when removing the oxide layer
It is longer, it is unfavorable for the promotion of production efficiency.
The stacking number of the composite layer is greater than or equal to 2；In the present embodiment, the stacking number of the composite layer is 2.
In the present embodiment, in one layer of composite layer, the distance of the passivation layer 206 to 205 surface of substrate is small
The distance on 205 surface of substrate is arrived in the oxide layer 207.
The oxide layer 207 is used to adsorb the byproduct particles sputtered from substrate to be cleaned.
The passivation layer 206 and the oxide layer 207 have biggish etching selection ratio, thus 206 energy of the passivation layer
It reaches when cleaning the adsorption plate, stop-layer when as the oxide layer 207 for removing the absorption plate surface avoids the cleaning
The composite layer of liquid damage 206 bottom of passivation layer.
The material of the passivation layer includes silicon nitride, silicon oxynitride, silicon carbide, fire sand or aluminium oxide.
The material of the passivation layer and the material of the oxide layer have preferable adhesiveness, so that the passivation layer and institute
The combination for stating oxide layer is preferable, is not easy demoulding, improves the reliability of the adsorption plate；The material of the passivation layer and institute simultaneously
The material for stating oxide layer has biggish etching selection ratio, can be each other as etching stop layer.
In the present embodiment, the material of the passivation layer 206 includes silicon nitride.
The forming method of the passivation layer 206 includes chemical vapor deposition process or atom layer deposition process.
In the present embodiment, the forming method of the passivation layer 206 includes chemical vapor deposition process.The chemical gaseous phase
Depositing operation can quickly form the passivation layer 206 of compact structure.
In the present embodiment, the material of the oxide layer 207 includes silica.
The silica has preferable adsorption energy for the oxide particle sputtered from the substrate surface to be cleaned
The byproduct particles can be adsorbed on 207 surface of oxide layer to the maximum extent by power, and the byproduct particles is avoided to float
The cavity is floated on to pollute the substrate to be cleaned and the cavity wall 200.
The forming method of the oxide layer 207 includes chemical vapor deposition process or atom layer deposition process.
In the present embodiment, the forming method of the oxide layer 207 includes chemical vapor deposition process.The chemical gaseous phase
Depositing operation can quickly form the oxide layer 207 of compact structure.
So far, the adsorption plate of formation, the material that the composite layer of the absorption plate surface is selected have preferable
Adsorption capacity, then adsorption capacity of the composite layer in the vacuum precleaning device is preferable, the vacuum precleaning device
Working efficiency with higher.
Correspondingly, the embodiment of the present invention also provides a kind of vacuum precleaning device formed using the above method, continuing with
With reference to Fig. 3, comprising:
Cavity wall 200, the power connection structure 201 being electrically connected with the cavity wall 200；
Microscope carrier 202, the microscope carrier 202 have loading end, and the microscope carrier 202 is fixedly connected with the cavity wall 200；
Baffle 204 between 202 edge of microscope carrier and the cavity wall 200, the baffle 204 respectively with the chamber
Wall 200 is fixedly connected with the microscope carrier 202；
Adsorption plate, the adsorption plate include substrate 205 and the several layers composite layer positioned at substrate surface, and the several layers
Composite layer is overlapped along perpendicular to adsorption plate surface direction, and the adsorption plate is detachably connected with the baffle 204, and the absorption
Loading end of the composite aspect of plate towards the microscope carrier 202.
One layer of composite layer includes passivation layer 206 and the oxide layer 207 positioned at 206 surface of passivation layer；The passivation layer
206 distance to 205 surface of substrate is less than the distance that the oxide layer 207 arrives 205 surface of substrate.
The material of the passivation layer includes silicon nitride, silicon oxynitride, silicon carbide, fire sand or aluminium oxide；The oxidation
The material of layer includes silica.
The thickness range of the adsorption plate is 1cm~4cm.
The thickness range of the passivation layer is 10nm~500nm；The thickness range of the oxide layer be 30nm~1 ×
105nm。
The stacking number of the composite layer is greater than or equal to 2.
Fig. 5 to Fig. 6 is the schematic diagram of the section structure of the vacuum precleaning device use process of the embodiment of the present invention.
Referring to FIG. 3, providing the vacuum precleaning device.
Fig. 5 and Fig. 6 are please referred to, Fig. 6 is the details enlarged drawing of region B in Fig. 5, is cleaned to the adsorption plate, is removed
One layer of composite layer of the absorption plate surface.
The method for removing the composite layer includes: the oxide layer 207 of removal absorption plate surface, until exposing the passivation
Layer 206；The passivation layer 206 exposed described in removal, until exposing next layer of composite layer.
The oxide layer 207 has preferable adsorption capacity to the byproduct of reaction particle, thus described anti-removing
It after oxide layer 207 after answering, also needs to remove the passivation layer 206, to expose the oxidation layer surface of next layer of composite layer, to protect
The adsorption plate is held with preferable adsorption capacity.
The technique for removing the oxide layer 207 includes wet-etching technology or dry etch process.
In the present embodiment, the technique for removing the oxide layer 207 includes wet-etching technology.The wet-etching technology
Etching solution be hydrofluoric acid solution.
The solution for removing the oxide layer 207 is hydrofluoric acid solution, and the hydrofluoric acid solution is to the silica and nitridation
Silicon has biggish etching selection ratio, can avoid while removing clean oxide layer 207 to the oxide layer 207
The damage of the passivation layer 206 of bottom is greatly to the compound layer surface for hurting 206 bottom of passivation layer, thus to the composite layer table
The oxide layer in face causes to damage, and the surface topography of the adsorption plate is caused to change, to influence the absorption of the composite layer
Ability.
The technique for removing the passivation layer 206 includes wet-etching technology or dry etch process.
In the present embodiment, the technique for removing the passivation layer 206 includes wet-etching technology.The wet-etching technology
Etching solution be phosphoric acid solution.
The solution of the passivation layer 206 is removed for phosphoric acid solution, the phosphoric acid solution is to the silica and silicon nitride
With biggish etching selection ratio, can avoid while removing clean passivation layer 206 to 206 bottom of passivation layer
The composite layer in portion causes to damage, and the surface topography of the adsorption plate is caused to change, to influence the absorption of the composite layer
Ability.
So far, the adsorption plate is cleaned, the material that the composite layer of the absorption plate surface is selected has just
In clean ability, then during cleaning the adsorption plate, the composite layer is easily removed and as by-product is discharged,
So that adsorption plate is convenient for cleaning.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (15)
1. a kind of vacuum precleaning device characterized by comprising
Cavity wall, the power connection structure being connect with the cavity wall；
Microscope carrier, the microscope carrier have loading end, and the microscope carrier is fixedly connected with the cavity wall；
Baffle between the microscope carrier edge and the cavity wall, the baffle are removable with the cavity wall and the microscope carrier respectively
Unload connection；
Adsorption plate, the adsorption plate include substrate and the several layers composite layer positioned at substrate surface, and the several layers composite layer
It is overlapped along perpendicular to adsorption plate surface direction, the adsorption plate is detachably connected with the baffle, and the adsorption plate is compound
Loading end of the level towards the microscope carrier.
2. vacuum precleaning device as described in claim 1, which is characterized in that the single layer composite layer includes passivation layer and position
In the oxide layer of passivation layer surface；The distance of the passivation layer to the substrate surface is less than the oxide layer to the substrate table
The distance in face.
3. vacuum precleaning device as claimed in claim 2, which is characterized in that the thickness range of the passivation layer be 10nm~
500nm；The thickness range of the oxide layer is 30nm~1 × 105nm。
4. vacuum precleaning device as claimed in claim 3, which is characterized in that the stacking number of the composite layer is greater than or waits
In 2.
5. vacuum precleaning device as claimed in claim 2, which is characterized in that the material of the passivation layer include silicon nitride,
Silicon oxynitride, silicon carbide, fire sand or aluminium oxide；The material of the oxide layer includes silica.
6. vacuum precleaning device as described in claim 1, which is characterized in that the thickness range of the adsorption plate be 1cm~
4cm。
7. vacuum precleaning device as described in claim 1, which is characterized in that the shape of the adsorption plate includes arc.
8. a kind of form the method such as any one of claim 1 to 7 vacuum precleaning device characterized by comprising
Initial cleanness device is provided, the initial cleanness device includes: cavity wall, the power connection structure connecting with the cavity wall；
Microscope carrier, the microscope carrier have loading end, and the microscope carrier is fixedly connected with the cavity wall；Positioned at the microscope carrier edge and the cavity wall
Between baffle, the baffle is detachably connected with the cavity wall and the microscope carrier respectively；Substrate, the substrate and the baffle
It is detachably connected；
Several layers composite layer, loading end of the several layers composite aspect towards the microscope carrier are formed in the substrate surface.
9. the forming method of vacuum precleaning device as claimed in claim 8, which is characterized in that the formation side of the composite layer
Method includes: to form passivation layer in the substrate surface；Oxide layer is formed in the passivation layer surface.
10. the forming method of vacuum precleaning device as claimed in claim 9, which is characterized in that the formation of the passivation layer
Method includes chemical vapor deposition process or atom layer deposition process.
11. the forming method of vacuum precleaning device as claimed in claim 9, which is characterized in that the formation of the oxide layer
Technique includes chemical vapor deposition process or atom layer deposition process.
12. a kind of method using such as any one of claim 1 to 7 vacuum precleaning device characterized by comprising
The vacuum precleaning device as described in claim 1 to 7 is provided；
The adsorption plate is cleaned, one layer of composite layer of the absorption plate surface is removed.
13. the application method of vacuum precleaning device as claimed in claim 12, which is characterized in that remove the composite layer
Method includes: the oxide layer of removal absorption plate surface, until exposing the passivation layer；The passivation layer exposed described in removal,
Until exposing next layer of composite layer.
14. the application method of vacuum precleaning device as claimed in claim 13, which is characterized in that remove the oxide layer
Technique includes wet-etching technology.
15. the application method of vacuum precleaning device as claimed in claim 13, which is characterized in that remove the passivation layer
Technique includes wet-etching technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910763602.5A CN110459457A (en) | 2019-08-19 | 2019-08-19 | A kind of application method of vacuum precleaning device and forming method, vacuum precleaning device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111074236A (en) * | 2019-12-27 | 2020-04-28 | 重庆康佳光电技术研究院有限公司 | Chemical vapor deposition device |
| CN113091413A (en) * | 2021-04-30 | 2021-07-09 | Tcl华星光电技术有限公司 | Vacuum drying device |
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| CN113091413A (en) * | 2021-04-30 | 2021-07-09 | Tcl华星光电技术有限公司 | Vacuum drying device |
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