CN110416049B - CCP etching device and method capable of adjusting edge radio frequency plasma distribution - Google Patents
CCP etching device and method capable of adjusting edge radio frequency plasma distribution Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 29
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention discloses a CCP etching device capable of adjusting the distribution of edge radio frequency plasma, which comprises: the upper electrode and the lower electrode are oppositely arranged; the radio frequency power source is connected with the lower electrode or the upper electrode; the bias power source is connected with the lower electrode; the edge electrode is annular, is arranged at the periphery of the lower electrode and is concentric with the lower electrode; one end of the impedance adjusting unit is connected with the edge electrode, and the other end of the impedance adjusting unit is grounded so as to form an edge radio frequency current grounding path; an electrostatic chuck disposed above the lower electrode; and the insulating ring is arranged above the extension part at the periphery of the lower electrode, and the edge electrode is embedded in the insulating ring. The advantages are that: the passive adjustment of the edge radio frequency coupling is realized by configuring the edge electrode and the impedance matching device to control the radio frequency ground loop impedance.
Description
Technical Field
The invention relates to the technical field of capacitive coupling plasma processing devices for processing semiconductor devices, in particular to a CCP etching device capable of adjusting edge radio frequency plasma distribution and a method thereof.
Background
In ccp (capacitive Coupled plasma) etching, edge effect is easily generated due to discontinuity of rf electromagnetic field at the edge of a substrate or wafer to be processed, and the edge effect is sensitive to the geometry and material of an edge process element, for example, a plasma Focus Ring (Focus Ring) tightly attached to a wafer becomes smaller in size with the increase of usage time due to plasma etching, so that the distribution of an edge sheath layer also gradually changes with time, which results in the deterioration of etching effect, for example, the inclination angle of an etching hole or a trench becomes larger with the decrease of the height of the Focus Ring, which affects the lifetime of the edge element, thereby increasing the usage cost of a consumable part.
To improve the edge effect and maintain the stability of the etching effect, one approach is to compensate for sheath distortion due to dimensional changes of the etching components. The prior art mostly adopts an active adjustment method, i.e. an electrode is added on the edge ring, and then the edge sheath layer distribution is adjusted by feeding a radio frequency or direct current voltage through the electrode, as shown in fig. 1, in which 100 ' is a schematic view of a local structure of the CCP etching apparatus, 101 ' is a substrate to be processed, 102 ' is an electrostatic chuck, 103 ' is an upper electrode which is usually grounded, 104 ' is a lower electrode, 105 ' is a radio frequency power source connected with a lower electrode 104 ', 106 ' is a bias power source, 107 ' is a matching circuit, 108 ' is a filter, 109 ' is a focusing ring, since the edge ring can also be called an edge ring at the edge of the wafer, 110 ' is an insulating sleeve for isolation, the defect of this is that another path of power input (i.e. the bias power source 106 ', the matching circuit 107 ' is a filter 108 ') must be added, and must be effectively isolated from the radio frequency power source 105 ' added on the electrostatic chuck 102 ', increasing the cost and complexity of the engineering implementation.
As shown in fig. 2, it is a schematic structural diagram of another conventional CCP etching apparatus, which employs a dual-frequency capacitive discharge rf mode, where dual-frequency refers to rf power (composed of an rf power source HF generator and an impedance matching unit HF matching network, with a high frequency of 40Mhz-200 Mhz) for controlling plasma density and bias power (composed of a bias power source LF generator and an impedance matching unit LF matching network, with a low frequency of 100kHZ-10 Mhz) for controlling sheath thickness and dc bias voltage of plasma, and in the diagram, 201 ' is a cavity, 202 ' is a moving ring, 203 ' is a confinement ring for controlling discharge, neutralization and charged particles therein of reaction gas and byproducts, so as to substantially confine plasma discharge to a processing region, 204 ' is a showerhead, 205 ' is a substrate to be processed, 206 ' is an electrostatic chuck, 207 ' is a process kit, 208 ' is an insulating ring, and 209 ' is a covering ring for isolating the plasma, so as to prevent the plasma from directly contacting the electrostatic chuck to cause current conduction, thereby preventing the electrostatic chuck 206 ' from being damaged by the plasma. The electrode structure in the CCP etching device is a parallel electrode, radio frequency power applies high frequency to a lower (or upper) electrode, generally to the lower electrode, and the main radio frequency loop is that current is coupled to the upper electrode from the lower electrode through plasma and is grounded through a reaction cavity. Since the edge of the electrode is far from the side wall of the chamber, the RF current directly coupled from the edge of the electrode to the side wall of the chamber is small, so that the distribution of the RF current in the plasma is mainly controlled by the gap and the size of the upper and lower electrodes. The small lateral current does not effectively adjust the rf power level in the peripheral region of the wafer edge (process kit 207 '/edge ring 109').
Disclosure of Invention
The invention aims to provide a CCP etching device capable of adjusting the distribution of edge radio frequency plasma and a method thereof, which control the impedance of a radio frequency grounding loop by configuring an edge electrode and an impedance matching device and realize the passive adjustment of edge radio frequency coupling.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a CCP etching device capable of adjusting the distribution of edge radio frequency plasma is characterized by comprising:
the upper electrode and the lower electrode are oppositely arranged;
the radio frequency power source is connected with the lower electrode or the upper electrode;
the bias power source is connected with the lower electrode;
the edge electrode is annular, is arranged at the periphery of the lower electrode and is concentric with the lower electrode;
one end of the impedance adjusting unit is connected with the edge electrode, and the other end of the impedance adjusting unit is grounded so as to form an edge radio frequency current grounding path;
an electrostatic chuck disposed above the lower electrode;
and the insulating ring is arranged above the extension part at the periphery of the lower electrode, and the edge electrode is embedded in the insulating ring.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution, wherein the impedance adjusting unit comprises:
a capacitor and an inductor connected in series.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution further includes:
and the control unit is connected with the capacitor and/or the inductor in the impedance adjusting unit to adjust the impedance of the impedance adjusting unit.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution, wherein:
the capacitance and/or inductance may be variable.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution further includes:
and the sensor is arranged in the edge radio frequency current grounding path to acquire radio frequency parameters.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution further includes:
and the control unit is connected with the impedance adjusting unit and the sensor so as to monitor the change of the radio frequency parameters and adjust the impedance of the impedance adjusting unit on line according to the change condition.
The above CCP etching apparatus capable of adjusting edge rf plasma distribution, wherein:
the electrostatic chuck is used for fixing a wafer to be etched, and further comprises a process kit positioned above the insulating ring, wherein the process kit surrounds the wafer, and the diameter of the inner side wall of the edge electrode is larger than or equal to the diameter of the outer side of the process kit.
A method for adjusting the distribution of edge radio frequency plasma is realized by adopting the CCP etching device, and is characterized in that:
simultaneously applying a radio frequency power source and a bias power source to the lower electrode;
the impedance of the impedance adjusting unit is adjusted according to the requirement to adjust the edge radio frequency coupling, so that the aim of adjusting the etching uniformity is fulfilled.
The method for adjusting the edge rf plasma distribution, wherein:
the impedance adjusting unit comprises a capacitor and an inductor which are connected in series;
the impedance adjusting method of the impedance adjusting unit comprises the following steps:
adjusting the capacitance value and the inductance value, and selecting a first inductance value to match with a first variable capacitance value to realize the adjustment of high impedance of 40MHz-200MHz at high frequency and impedance of 100kHz-10MHz at low frequency;
and adjusting the capacitance value and the inductance value, and selecting a second inductance value to match with a second variable capacitance value so as to realize the adjustment of the high impedance of the low frequency of 100kHz-10MHz and the impedance of the high frequency of 40MHz-200 MHz.
Compared with the prior art, the invention has the following advantages: by configuring the edge electrode and the impedance matching device, the impedance of the radio frequency grounding loop is controlled, the passive adjustment of the edge radio frequency coupling is realized, the use of an additional power supply, a radio frequency input and a radio frequency isolation device is reduced, the design of a cavity is simplified, and the hardware cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a partial structure of a CCP etching apparatus in the prior art;
FIG. 2 is a schematic structural diagram of another CCP etching apparatus in the prior art;
FIG. 3 is a schematic structural diagram of a CCP etching apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a CCP etching apparatus according to another embodiment of the present invention;
FIG. 5 is an equivalent RF loop diagram of an impedance adjustment unit of the CCP etching apparatus according to the embodiment of the present invention;
FIG. 6 is a graph showing a relationship between a capacitance and a radio frequency impedance curve when the edge low frequency ground impedance is adjusted in the CCP etching apparatus according to the embodiment of the present invention;
fig. 7 is a graph showing a relationship between a capacitance and a radio frequency impedance when the CCP etching apparatus adjusts the edge high-frequency ground impedance in the embodiment of the present invention.
Detailed Description
The present invention will now be further described by way of the following detailed description of a preferred embodiment thereof, taken in conjunction with the accompanying drawings.
As shown in fig. 3, the present invention provides a CCP etching apparatus capable of adjusting edge rf plasma distribution, which is a dual-frequency plasma system, and includes: an upper electrode and a lower electrode which are oppositely arranged in the cavity 1; a radio frequency power source (usually 40MHz-200 MHz) connected to the lower electrode for exciting the reaction gas between the upper electrode and the lower electrode into plasma, which usually consists of an HF generator and an HF matching network; a bias power source (usually at 100kHz-10 MHz) connected to the lower electrode or the upper electrode for controlling the distribution of plasma energy, i.e. the thickness of the plasma sheath and the dc bias voltage, and generally composed of an LF generator and an LF matching network, in this embodiment, the lower electrode is connected as an example; the edge electrode 10 is arranged in the cavity 1, is annular, is arranged at the periphery of the lower electrode and is concentric with the lower electrode; an impedance adjusting unit 11, one end of which is connected to the edge electrode 10 and the other end of which is grounded, forms an edge rf current grounding path, i.e. from the lower electrode to the upper electrode to the edge electrode 10 and then to ground, so as to control the rf grounding loop impedance, i.e. by controlling the grounded rf current passing through the edge electrode, the edge rf coupling is adjusted to achieve the purpose of adjusting the plasma characteristics and the sheath distribution.
Usually, the CCP etching apparatus further includes: the electrostatic chuck 6 is used for adsorbing a substrate 5 to be processed, and the electrostatic chuck 6 is arranged above the lower electrode; an insulating ring 8 disposed above the extension part of the periphery of the lower electrode, a moving ring 2 disposed on the inner wall of the chamber 1, a shower head 4 disposed below the upper electrode for spraying a reaction gas, a process kit 7, a limiting ring 3, and a cover ring 9, as shown in fig. 3, in this embodiment, the edge electrode 10 may be embedded in the insulating ring 8.
As shown in fig. 4, a sensor may be further disposed in the edge rf current ground path to collect rf parameters, and the control unit may be connected to the impedance adjusting unit and the sensor to monitor changes of the rf parameters and adjust the impedance of the impedance adjusting unit on line according to the changes.
As shown in fig. 5, it is an equivalent rf loop of the edge electrode 10, wherein the impedance adjusting unit 11 includes: the number of the capacitors and the inductors is not limited, and preferably, the capacitors and/or the inductors are variable, the control unit is connected with at least one capacitor or inductor in the impedance adjusting unit, so as to achieve the purpose of adjusting the impedance of the impedance adjusting unit, and the specification of the radio frequency element can be selected to be different according to requirements, so as to form different impedances for low frequency or high frequency, thereby controlling the magnitude of the ground coupling current of the radio frequency power with different frequencies at the edge.
The invention also provides a method for adjusting the distribution of the edge radio frequency plasma, which is realized by adopting the CCP etching device and comprises the following steps: simultaneously applying a radio frequency power source and a bias power source to the lower electrode; the impedance of the impedance adjusting unit is adjusted according to the requirement to adjust the edge radio frequency coupling, so that the aim of adjusting the etching uniformity is fulfilled.
As shown in fig. 6 and 7, the influence of the capacitance on the high frequency and the low frequency is shown, the capacitance mainly has a limiting effect on the low frequency current, while in a dual-frequency plasma system, the impedance of the inductance to the high frequency (> 10 MHz) is much larger than the impedance to the low frequency (< 10 MHz), based on the relationship, in the embodiment where the impedance adjusting unit 11 includes the capacitance and the inductance connected in series, the impedance adjusting method of the impedance adjusting unit 11 is: adjusting the capacitance value and the inductance value, and selecting a first inductance value to match with a first variable capacitance value to realize the adjustment of high impedance of 40MHz-200MHz at high frequency and impedance of 100kHz-10MHz at low frequency; the capacitance and inductance values are adjusted, and the second inductance value is selected to match the second variable capacitance value, so as to realize the adjustment of the high impedance of the low frequency of 100kHz-10MHz and the impedance of the high frequency of 40MHz-200MHz, wherein the values of the first and second capacitance values or the first and second variable inductance values mentioned herein can be calculated by those skilled in the art according to the impedance requirements for the high frequency and the low frequency, and the first inductance value should be a larger inductance value, the second inductance value should be a smaller inductance value, the first inductance value > the second inductance value, the first variable capacitance value should be a larger variable capacitance value, the second variable capacitance value should be a smaller variable capacitance value, and the first variable capacitance value > the second variable capacitance value.
The impedance adjusting unit of the present invention selects the current flowing into the ground terminal through the edge electrode by adjusting the impedance, but the present invention aims to adjust the plasma distribution reaching the edge region of the wafer, i.e. above the annular process kit 7, and requires sufficient rf power to be supplied above the process kit 7, so that the edge electrode 10 is not suitable to be disposed between the lower electrode and the process kit 7 to prevent a large amount of rf power from being directly conducted away to the process kit 7. Therefore, the edge electrode 10 of the present invention needs to be located between the process kit 7 and the sidewall of the reaction chamber, i.e., the diameter of the inner sidewall of the edge electrode 10 needs to be equal to or larger than the diameter of the outer sidewall of the process kit 7.
In summary, the edge electrode and the impedance matching device are configured to control the rf ground loop impedance, so as to realize passive adjustment of the edge rf coupling, reduce the use of additional power supplies, rf input and rf isolation devices, simplify the cavity design, and reduce the hardware cost.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A CCP etching apparatus capable of adjusting edge rf plasma distribution, comprising:
the upper electrode and the lower electrode are oppositely arranged;
the radio frequency power source is connected with the lower electrode or the upper electrode;
the bias power source is connected with the lower electrode;
the edge electrode is annular, is arranged at the periphery of the lower electrode and is concentric with the lower electrode;
one end of the impedance adjusting unit is connected with the edge electrode, and the other end of the impedance adjusting unit is grounded so as to form an edge radio frequency current grounding path;
an electrostatic chuck disposed above the lower electrode;
the insulating ring is arranged above the extension part at the periphery of the lower electrode, and the edge electrode is embedded in the insulating ring;
the electrostatic chuck is used for fixing a wafer to be etched, and further comprises a process kit positioned above the insulating ring, wherein the process kit surrounds the wafer, and the diameter of the inner side wall of the edge electrode is larger than or equal to the diameter of the outer side of the process kit.
2. The CCP etching apparatus of claim 1 wherein said impedance adjusting unit comprises:
a capacitor and an inductor connected in series.
3. A CCP etching apparatus of adjustable edge rf plasma profile as recited in claim 2, further comprising:
and the control unit is connected with the capacitor and/or the inductor in the impedance adjusting unit to adjust the impedance of the impedance adjusting unit.
4. A CCP etching apparatus of adjustable edge rf plasma distribution as recited in claim 3 wherein:
the capacitance and/or inductance may be variable.
5. A CCP etching apparatus of adjustable edge rf plasma profile as recited in claim 1, further comprising:
and the sensor is arranged in the edge radio frequency current grounding path to acquire radio frequency parameters.
6. The apparatus for CCP etching with adjustable edge RF plasma distribution of claim 5, further comprising:
and the control unit is connected with the impedance adjusting unit and the sensor so as to monitor the change of the radio frequency parameters and adjust the impedance of the impedance adjusting unit on line according to the change condition.
7. A method of adjusting edge rf plasma distribution using the CCP etching apparatus of claim 1, characterized in that:
simultaneously applying a radio frequency power source and a bias power source to the lower electrode;
the impedance of the impedance adjusting unit is adjusted according to the requirement to adjust the edge radio frequency coupling, so that the aim of adjusting the etching uniformity is fulfilled.
8. The method of claim 7, wherein the step of adjusting the edge rf plasma profile comprises:
the impedance adjusting unit comprises a capacitor and an inductor which are connected in series;
the impedance adjusting method of the impedance adjusting unit comprises the following steps:
adjusting the capacitance value and the inductance value, and selecting a first inductance value to match with a first variable capacitance value to realize the adjustment of high impedance of 40MHz-200MHz at high frequency and impedance of 100kHz-10MHz at low frequency;
and adjusting the capacitance value and the inductance value, and selecting a second inductance value to match with a second variable capacitance value so as to realize the adjustment of the high impedance of the low frequency of 100kHz-10MHz and the impedance of the high frequency of 400MHz-200MHz, wherein the first inductance value is larger than the second inductance value.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810400178.3A CN110416049B (en) | 2018-04-28 | 2018-04-28 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
| TW108108926A TWI732190B (en) | 2018-04-28 | 2019-03-15 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
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| CN201810400178.3A CN110416049B (en) | 2018-04-28 | 2018-04-28 | CCP etching device and method capable of adjusting edge radio frequency plasma distribution |
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| CN110416049B true CN110416049B (en) | 2022-02-11 |
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|---|---|---|---|---|
| WO2023240003A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Rf and dc frequency and phase locked pulsed edge tilt control system |
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| CN112103163B (en) * | 2019-06-17 | 2022-06-17 | 北京北方华创微电子装备有限公司 | Bottom electrode device and related plasma system |
| CN112838040B (en) * | 2019-11-25 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
| CN113130284B (en) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| US11887820B2 (en) * | 2020-01-10 | 2024-01-30 | COMET Technologies USA, Inc. | Sector shunts for plasma-based wafer processing systems |
| CN111211078A (en) * | 2020-01-14 | 2020-05-29 | 长江存储科技有限责任公司 | Wafer calibration device and method and wafer edge etching equipment and method |
| CN113838734B (en) * | 2020-06-24 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate processing method |
| CN111681976B (en) * | 2020-07-01 | 2024-09-27 | 上海邦芯半导体科技有限公司 | Inductive coupling edge etching reaction device and edge etching method |
| CN114664622B (en) * | 2020-12-23 | 2024-07-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and adjusting method |
| CN114695045A (en) * | 2020-12-29 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | Plasma etching equipment |
| CN115249606B (en) * | 2021-04-28 | 2025-02-14 | 中微半导体设备(上海)股份有限公司 | Plasma processing device, lower electrode assembly and forming method thereof |
| CN113936988B (en) * | 2021-10-12 | 2022-12-09 | 大连理工大学 | An edge plasma distribution adjustment device |
| CN114203514A (en) * | 2021-12-14 | 2022-03-18 | 拓荆科技股份有限公司 | Wafer support base and process chamber |
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| CN103915308A (en) * | 2012-12-31 | 2014-07-09 | 中微半导体设备(上海)有限公司 | A kind of etching method and etching device of double radio frequency pulsed plasma |
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| WO2023240003A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Rf and dc frequency and phase locked pulsed edge tilt control system |
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| CN110416049A (en) | 2019-11-05 |
| TW201946150A (en) | 2019-12-01 |
| TWI732190B (en) | 2021-07-01 |
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