CN110408956A - The method of silicon ion in solution is removed in a kind of chloralkali process - Google Patents
The method of silicon ion in solution is removed in a kind of chloralkali process Download PDFInfo
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- CN110408956A CN110408956A CN201910731483.5A CN201910731483A CN110408956A CN 110408956 A CN110408956 A CN 110408956A CN 201910731483 A CN201910731483 A CN 201910731483A CN 110408956 A CN110408956 A CN 110408956A
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- nanofiltration membrane
- dechlorination
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 238000003843 chloralkali process Methods 0.000 title claims abstract description 15
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 238000001728 nano-filtration Methods 0.000 claims abstract description 34
- 150000003839 salts Chemical class 0.000 claims abstract description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000001914 filtration Methods 0.000 claims abstract description 12
- 238000006298 dechlorination reaction Methods 0.000 claims abstract description 11
- -1 silicon ion Chemical class 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 7
- 230000007774 longterm Effects 0.000 claims abstract description 6
- 239000011734 sodium Substances 0.000 claims abstract description 6
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001424 calcium ion Inorganic materials 0.000 claims abstract description 5
- 239000003014 ion exchange membrane Substances 0.000 claims abstract description 5
- 229910001425 magnesium ion Inorganic materials 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims abstract description 4
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 230000001376 precipitating effect Effects 0.000 claims abstract description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 3
- 239000000706 filtrate Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 20
- 239000012267 brine Substances 0.000 claims description 9
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 12
- 125000004122 cyclic group Chemical group 0.000 abstract description 2
- 235000002639 sodium chloride Nutrition 0.000 description 29
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 15
- 239000011780 sodium chloride Substances 0.000 description 10
- 238000000108 ultra-filtration Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 235000011121 sodium hydroxide Nutrition 0.000 description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000008014 freezing Effects 0.000 description 3
- 238000007710 freezing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229910003641 H2SiO3 Inorganic materials 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001471 micro-filtration Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- UJQGVDNQDFTTLZ-VNHYZAJKSA-N 2-[(2r,4ar,8as)-4a-methyl-8-methylidene-1,2,3,4,5,6,7,8a-octahydronaphthalen-2-yl]prop-2-enoic acid Chemical compound C1CCC(=C)[C@@H]2C[C@H](C(=C)C(O)=O)CC[C@]21C UJQGVDNQDFTTLZ-VNHYZAJKSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000007832 Na2SO4 Substances 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010889 donnan-equilibrium Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000008235 industrial water Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D36/00—Filter circuits or combinations of filters with other separating devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/34—Simultaneous production of alkali metal hydroxides and chlorine, oxyacids or salts of chlorine, e.g. by chlor-alkali electrolysis
- C25B1/46—Simultaneous production of alkali metal hydroxides and chlorine, oxyacids or salts of chlorine, e.g. by chlor-alkali electrolysis in diaphragm cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B15/00—Operating or servicing cells
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
The invention discloses a kind of methods that silicon ion in solution is removed in chloralkali process, comprising the following steps: suitable sodium carbonate and sodium hydroxide is added into raw material salt first, precipitating, filtering remove calcium ions and magnesium ions；Filtrate is passed through ion-exchange membrane electrolyzer, adjusting pH is 10-11, and Na is then added2SO3, dechlorination, solution oxide reduction potential ORP < 200mV are carried out, dechlorination is completed；Pre-filtering is carried out to the solution that dechlorination is completed using cartridge filter, the pH of filtering water outlet is controlled in 10-10.5, nanofiltration membrane system is pumped directly into after suitable antisludging agent is added, nanofiltration system penetrating fluid and raw material salt mixing circulation use, and the nanofiltration membrane system is using the alkaline-resisting nanofiltration membrane that can be run steadily in the long term under alkaline condition.Nanofiltration membrane is 60-70% to the rejection of Si, can effectively remove the silicon in solution, avoids silicon in cyclic process from being enriched with, damages amberplex；It is can be avoided in the process using a large amount of hydrochloric acid, reduces process costs.
Description
Technical field
The present invention relates to chloralkali process technical fields, and in particular to the side of silicon ion in solution is removed in a kind of chloralkali process
Method.
Background technique
During chloralkali process prepares caustic soda, needs to remove calcium, magnesium, barium, strontium, the silicon plasma in solution, make it
Content meets the upper film requirement of amberplex, and Fig. 1 is traditional chloralkali process figure, uses deep sea salt, rock salt and ground first
Lower brine is added two alkali, pH is strict controlled between 10-12, while removing calcium ions and magnesium ions, silicon can be given birth to as raw material salt
It at biggish solid particle, is removed by filtration, then upper ion-exchange membrane electrolyzer generates saturated common salt water electrolysis in the process
Light salt brine is recycled again usually as raw material, and the pH for the light salt brine that amberplex comes out needs usually in 2-3 by pH tune
It is whole to 10 or more, Na is added2SO3Dechlorination is carried out, through pre-filtering, before upper nanofiltration membrane carries out denitration, a large amount of hydrochloric acid is added will
It is tuned into neutral meta-acid, there is carbonate in the form of bicarbonate radical, avoids fouling, while meeting common nanofiltration membrane cannot
The requirement operated in the stronger environment of alkalinity for a long time.The process can consume a large amount of hydrochloric acid, cause higher operating cost, and
Hydrochloric acid belongs to the precursor chemicals that are included in of country, than relatively hazardous in use process.
Summary of the invention
It is found in actual production process, it, still will be true either using deep sea salt, rock salt and subsurface brine as raw material salt
Empty salt uses industrial water dissolution as raw material salt, and for a period of time, silicon all can be exceeded in amberplex water inlet, to ion exchange for operation
Film damages.Analyze reason discovery: in antecedent chemical treatment process, pH is difficult to be strict controlled between 10-12, if
PH is excessively high in the process, it will dissolves the silicon generated precipitating, while making the SiO in the solid particulate matters such as sandstone2Dissolution, most
Cause the silicone content in ion exchange coating solution exceeded eventually.In addition, since nanofiltration denitration principle is the Donnan effect of film,
Film depends on the electrostatic interaction between ion and film to the rejection effect of salt, and in pH < 10, silicon is usually with H2SiO3Form deposit
Electroneutral is being presented, nanofiltration membrane is to H2SiO3Cutoff performance it is poor.Therefore, traditional technique is difficult to be effectively removed silicon, special
It is not as light salt brine constantly recycles, silicon is enriched in the entire system, certain content is accumulated to, more than the upper film of amberplex
It is required that being damaged to amberplex.
Present invention aims to overcome that disadvantage of the existing technology, seek to design removing in solution in a kind of chloralkali process
The method of silicon ion, which solve, since enrichment or process regulation are bad, caused silicon ion contains in existing chloralkali process
Amount is more than the requirement of upper amberplex, and then the problem of damage amberplex, while solving hydrochloric acid in denitrification process and consuming
Measure big problem.
To achieve the above object, the invention adopts the following technical scheme:
A kind of method that silicon ion in solution is removed in chloralkali process, specifically includes the following steps:
(1) suitable sodium carbonate and sodium hydroxide is added into raw material salt first, precipitating, filtering remove calcium ions and magnesium ions；
(2) step (1) filtrate is passed through ion-exchange membrane electrolyzer, sodium hydroxide is added into electrolytic cell water outlet light salt brine
Adjusting pH is 10-11, and Na is then added2SO3, dechlorination, solution oxide reduction potential ORP < 200mV are carried out, dechlorination is completed；
(3) pre-filtering is carried out to the solution that step (2) dechlorination is completed using cartridge filter, after suitable antisludging agent is added
It is pumped directly into nanofiltration membrane system, nanofiltration system penetrating fluid and raw material salt mixing circulation use；Under this condition, silicon mainly with
HSiO3 -And SiO3 2-Form exist, nanofiltration membrane is 60-70% to the rejection of Si, can effectively remove the silicon in solution, keep away
Exempt from silicon ion to be enriched in light salt brine cyclic process, and then influences the normal work of amberplex；The nanofiltration membrane system is adopted
With the alkaline-resisting nanofiltration membrane that can be run steadily in the long term under alkaline condition.
Preferably, nanofiltration membrane can in the case where pH=10-11 normal use, such as Tao Shi production alkaline-resisting nanofiltration
Film, the operation which can be steady in a long-term under the conditions of stronger alkaline environment, the distinguishing feature of this special nanofiltration membrane are
The thickness of aramid layer is very high, and the aperture of normal ultrafiltration membrane is 20-200nm, the ultrafiltration membrane bottom that common nanofiltration membrane is usually selected
The aperture of material is larger, then carries out interface polymerization reaction as ground, generates PA layers, and the PA thickness degree is and special than relatively thin
Nanofiltration membrane uses the biggish ultrafiltration membrane ground in aperture of ultrafiltration membrane ground, aperture can be selected close to the ultrafiltration membrane of 200nm, then
Cross-polymerization reaction is carried out, the interface polymerization reaction time is extended, its reaction is made to generate the aramid layer of higher caliper, the nanofiltration
Film can be steady in a long-term under the conditions of stronger alkaline environment operation, but need to control its running temperature lower than 35 DEG C.
In order to further guarantee the stable operation of nanofiltration membrane, in step (3), pre-filtering is discharged pH control in 10-10.5.
Compared with the prior art, the invention has the following beneficial effects: (1) nanofiltration membrane is 60-70% to the rejection of Si,
The silicon in solution can be effectively removed, avoids silicon in cyclic process from being enriched with, damages amberplex；(2) it can be avoided during
Using a large amount of hydrochloric acid, process costs are reduced；(4) it is reduced during two alkali is added without strictly controlling pH
The requirement of control process.
Detailed description of the invention
Fig. 1 is traditional chloralkali process process flow chart.
Fig. 2 is the flow chart that the method for silicon ion in solution is removed in chloralkali process of the present invention.
Specific embodiment:
Invention is described further with attached drawing combined with specific embodiments below.
Embodiment 1
As shown in Fig. 2, the present invention is deep sea salt, rock salt first by adding a certain proportion of water, salt dissolving processing is carried out, is changed
The concentration of sodium chloride is 290-300g/L in salt water after salt, two alkali, additional amount is then added into water are as follows: NaOH 0.2-0.4g/
L, Na2CO30.5-1g/L is chemically treated, and the calcium ions and magnesium ions in water are removed, and is precipitated subsequently into sedimentation basin, is used microfiltration membranes
It is filtered, microfiltration membranes are polysulfones, polyether sulfone or polyvinylidene fluoride, feed water pressure < 10bar, high to the rate of recovery of solution
In 99%, the particulate that partial size is 0.01-0.1 μm can be filtered out, for removing the suspended matter in solution, after filtering it
Solution turbidity < 0.5NTU, then upper high performace ion exchange membrane electrolytic cell carries out alkaline, and it is light salt brine that electrolytic cell, which comes out,
NaCl content is usually 190-210g/L, and pH 2-3 contains the free chlorine of high level at this time in water, it is necessary to be added and carry out
Dechlorination processing, this step need for the pH value of solution to be adjusted to 10-10.5, add Na2SO3,Na2SO3Additive amount can guarantee and
Free chlorine in water reacts slightly excessive completely, controls the oxidation-reduction potential ORP < 200mV of its system, removes the trip in water
From chlorine, the free chlorine in water is 0, and then upper cartridge filter is filtered, and filtered salt water pH is controlled in 10-10.5, on
Alkaline-resisting nanofiltration membrane, NaCl is 190-230g/L, Na in the feeding liquid of nanofiltration membrane herein2SO4For 8-12g/L；Temperature is 40-45 DEG C；
Pressure is 20-25bar；PH is 10-10.5；Chlorine residue is 0；ORP < 200mV；Turbidity < 1NTU；SiO2For 10-15ppm, use
Multistage nanofiltration system, the standard block room which is connected in a series arrangement by several form, and each element cell is built-in
The diameter dimension for having 5-6 standard is 8 cun of nanofiltration membrane unit modules, and the intake pressure of water inlet is 20-25bar, and temperature is lower than
35℃.In 12-15m3Under the flow of inlet water of/h, the section flow control of nanofiltration membrane component is in 280-300mm/s, the section flow velocity
Concentration polarization effect can be reduced to greatest extent, to reduce fouling membrane to greatest extent.The rate of recovery of the nanofiltration system is logical
Often it can achieve 80% or more, the rejection to sodium sulphate is 96% or more, to SiO2Rejection be 60-70%, infiltration
It is mainly NaCl in liquid, penetrating fluid will be squeezed into salt dissolving pond a certain amount of salt of addition and be reused, and concentrate will enter freezing
Crystal system carries out freezing and crystallizing, crystallizes out Na2SO4·10H2O, freezing liquid squeeze into nanofiltration system charging carry out again denitration and
Desiliconization processing.
Claims (3)
1. removing the method for silicon ion in solution in a kind of chloralkali process, which comprises the following steps:
(1) suitable sodium carbonate and sodium hydroxide is added into raw material salt first, precipitating, filtering remove calcium ions and magnesium ions；
(2) step (1) filtrate is passed through ion-exchange membrane electrolyzer, sodium hydroxide is added into electrolytic cell water outlet light salt brine and adjusts
PH is 10-11, and Na is then added2SO3, dechlorination, solution oxide reduction potential ORP < 200mV are carried out, dechlorination is completed；
(3) the solution progress pre-filtering completed using cartridge filter to dechlorination is added after suitable antisludging agent to be pumped directly into and be received
Filter membrane system is handled, and nanofiltration system penetrating fluid and raw material salt mixing circulation use, and nanofiltration membrane is 60- to the rejection of Si
70%, the nanofiltration membrane system is using the alkaline-resisting nanofiltration membrane that can be run steadily in the long term under alkaline condition.
2. removing the method for silicon ion in solution in chloralkali process according to claim 1, which is characterized in that nanofiltration membrane energy
Enough operations steady in a long-term in the case where pH=10-11.
3. removing the method for silicon ion in solution in chloralkali process according to claim 1, which is characterized in that step (3)
In, pre-filtering is discharged pH control in 10-10.5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910731483.5A CN110408956B (en) | 2019-08-08 | 2019-08-08 | Method for removing silicon ions in solution in chlor-alkali process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910731483.5A CN110408956B (en) | 2019-08-08 | 2019-08-08 | Method for removing silicon ions in solution in chlor-alkali process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111087096A (en) * | 2019-12-16 | 2020-05-01 | 中盐金坛盐化有限责任公司 | Method for removing silicon element in liquid salt by using boiler tail gas |
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| CN101925535A (en) * | 2007-12-28 | 2010-12-22 | 犹德有限公司 | Removal of silicon from brine |
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| CN105110536A (en) * | 2015-08-19 | 2015-12-02 | 石家庄工大化工设备有限公司 | Recycling method for high-salinity wastewater containing sodium chloride and sodium sulfate |
| CN110054204A (en) * | 2019-05-19 | 2019-07-26 | 蓝星(北京)化工机械有限公司 | The method for preparing bronsted lowry acids and bases bronsted lowry using sodium sulphate in dechlorination light salt brine |
-
2019
- 2019-08-08 CN CN201910731483.5A patent/CN110408956B/en active Active
Patent Citations (4)
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|---|---|---|---|---|
| CN101925535A (en) * | 2007-12-28 | 2010-12-22 | 犹德有限公司 | Removal of silicon from brine |
| CN102502986A (en) * | 2011-10-26 | 2012-06-20 | 中国石化江汉油田分公司盐化工总厂 | Comprehensive utilization method of ionic membrane electrolytic saline solution waste liquid |
| CN105110536A (en) * | 2015-08-19 | 2015-12-02 | 石家庄工大化工设备有限公司 | Recycling method for high-salinity wastewater containing sodium chloride and sodium sulfate |
| CN110054204A (en) * | 2019-05-19 | 2019-07-26 | 蓝星(北京)化工机械有限公司 | The method for preparing bronsted lowry acids and bases bronsted lowry using sodium sulphate in dechlorination light salt brine |
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| Title |
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| Μ.С.施克罗勃 等，: "《蒸汽轮机发电厂的水处理和水工况 上册》", 30 April 1966, 中国工业出版社，第1版 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111087096A (en) * | 2019-12-16 | 2020-05-01 | 中盐金坛盐化有限责任公司 | Method for removing silicon element in liquid salt by using boiler tail gas |
| CN111087096B (en) * | 2019-12-16 | 2022-05-24 | 中盐金坛盐化有限责任公司 | Method for removing silicon element in liquid salt by using boiler tail gas |
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