CN110379783A - Promote the method and structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance - Google Patents
Promote the method and structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance Download PDFInfo
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- CN110379783A CN110379783A CN201910609492.7A CN201910609492A CN110379783A CN 110379783 A CN110379783 A CN 110379783A CN 201910609492 A CN201910609492 A CN 201910609492A CN 110379783 A CN110379783 A CN 110379783A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 238000009413 insulation Methods 0.000 title claims abstract description 95
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 claims abstract description 85
- 230000001737 promoting effect Effects 0.000 claims abstract description 18
- 238000012856 packing Methods 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims description 41
- 230000005855 radiation Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 28
- 239000012212 insulator Substances 0.000 description 26
- 239000003292 glue Substances 0.000 description 17
- 238000001816 cooling Methods 0.000 description 16
- 238000002955 isolation Methods 0.000 description 10
- 238000009434 installation Methods 0.000 description 8
- 239000000499 gel Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 239000004568 cement Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000553 6063 aluminium alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Promote the method and structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance.High power semi-conductor packaging bottom plate and radiator are carried out to the heat dissipation of insulation mode by the heat conductive insulating pad of high thermal conductivity and good insulation preformance, it is insulated on a heat sink by pre-buried fastening nut insulating part to fastening nut and radiator simultaneously, so that forming insulation between fastening bolt structure and radiator, and it is filled by insulating fastening bolt structure so that large power semiconductor device bottom plate and heat conductive insulating pad, radiator three's binding face is seamless applying, fastening connection, the heat of high power semi-conductor packaging is transmitted to radiator using heat conductive insulating pad, promoting high power semi-conductor packaging opposite heat sink insulating capacity simultaneously, guarantee that it effectively radiates.The present invention is seamless applying by semiconductor packing device bottom plate, heat conductive insulating pad, radiator binding face by insulated bolt, effectively radiates while promoting high power semi-conductor packaging opposite heat sink insulating capacity.
Description
Technical field
The present invention relates to a kind of insulating radiation method and structure of power semiconductor package device, refer in particular to a kind of work
The insulating radiation method and structure of sparetime university's power semiconductor package device (such as IGBT), this kind of high power semi-conductor packaging
Insulating radiation method and structure can effectively improve the insulation performance of high power semi-conductor packaging opposite heat sink while protect
It is demonstrate,proved effectively to radiate；Belong to the insulating radiation technical field of high power semi-conductor encapsulation packaging.
Background technique
Power semiconductor package device is a kind of at present using a kind of very extensive power electronic devices, power semiconductor
Part category is numerous.Power semiconductor can be divided into ambipolar and monopole type power semiconductor according to carrier type.At present
The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) generallyd use on locomotive is just
Belong to a kind of power semiconductor package device of the high-power type of industrial applications.As the power semiconductor of this kind of high-power type seals
Dress device can generate a large amount of heat in operation, in order to avoid device because of high temperature scaling loss, it is necessary to carry out to power device scattered
Heat, at present for the heat dissipation of the power device of this type, be all generally by a radiator by power device heat directly or
Person is dispersed into air indirectly, to guarantee that power device is run steadily in the long term.The power applied in rail traffic is partly led
Body device, because of different geographical, the voltage that country variant power grid provides is different, and certain requirement on devices are applicable in different insulation etc.
Grade, if the power device period for individually developing the high class of insulation is long, it is desirable that one time order volume is big, at high cost.And by device
Part and radiator and short to the screw of fastening means this insulated heat radiation structure opposite development cycle that insulate, and to primary
Order volume is at low cost without too high requirement.And because the insulated heat radiation structure of exploitation, does not limit to the type selecting of device,
The insulation of exploitation different size size, different insulative grade can be required according to the outer dimension of device, different insulating radiations
Radiator structure, the exploitation of the high power device relative to the high class of insulation are had out using the radiator of such insulation system
The features such as hair period is short, technology that is at low cost, being not only restricted to the foreigner, while because of no connection for changing power device and radiator
Mode is connect, the felt pad between power device and radiator has in higher thermal coefficient, and this structure is made to have high-insulativity
Energy, high mechanical strength, high heat dispersion, thus with higher through flowing benefit.
By patent retrieval do not find have with the patent literature report of same technique of the present invention, have certain relationship with the present invention
Patent mainly have it is following:
1, Patent No. CN201210551326, entitled " radiator of power device ", applicant are as follows: ZTE Corporation's share
The patent of invention of Co., Ltd, which disclose a kind of radiators of power device, comprising: power device, radiating element,
And it is connected to the heat conductive insulating device between the power device and the radiating element, wherein the heat conductive insulating device
Welding is all made of with the power device and the radiating element or bonding way is connect, and the heat conductive insulating device is that ceramics are multiple
Close metal substrate.Although this patent is mentioned using ceramic-metal composite substrate, but still connected using welding or bonding way,
There are still be not connected firmly to lean in this way.
2, Patent No. CN201621167383.2, a kind of entitled " belt grounding resistor ", applicant are as follows: Guangdong good fortune
The utility model patent of moral Electronics Co., Ltd., which disclose a kind of belt grounding resistor, including resistor chain unit, electricity
Resistance row's unit includes resistance band, insulating part, boom and multiple brackets, and multiple brackets connect with boom and along the length side of boom
To arrangement, it to be isolated between two neighboring bracket by insulating part and is fixed, resistance band is integrally formed and continuous bend structure,
Multiple knees of resistance band are correspondingly arranged with multiple brackets, and each knee of resistance band is welded with corresponding bracket respectively
Connect fixation.
3, Patent No. CN201820006113, entitled " radiator and power mould for high voltage power device
Block ", applicant are as follows: the utility model patent of Delta Electronics Enterprise Management (Shanghai) Co., Ltd., which disclose a kind of use
In the radiator and power module of high voltage power device, radiator includes: substrate, thermal insulation layer, ceramic substrate and bullet
Piece；Ceramic substrate is installed on substrate, and power device is set on ceramic substrate；High voltage power device is fixed on ceramics by elastic slice
On substrate；Elastic slice includes: interconnecting piece and pressure section；Interconnecting piece is locked on substrate；One end of pressure section is connected to interconnecting piece, supports
The other end of splenium compresses high voltage power device on ceramic substrate；Thermal insulation layer be set between substrate and ceramic substrate and
Between ceramic substrate and high voltage power device, and then the capacity of heat transmission between high voltage power device, ceramic substrate and substrate is improved,
And the insulation between offer three.Thermal insulation layer described in the patent is still by the way of bonding by substrate and ceramics
Substrate equally exists problem noted earlier.
By carefully analyzing to these above-mentioned patents, although these patents have been directed to the radiating insulating of power device
Mode and structure, it was also proposed that some improved technology schemes, but by carefully analyzing, those improvement are all unsatisfactory for present high-speed rail
Contour stress levels requirement, is still all that will be connected between high-power component and radiator by the way of bonding, at most
Heat conductive isolation sheet only is increased in centre, but insulation connection is still carried out using glue sticking mode between heat conductive isolation sheet；Cause
This these patent all without solve between high-power component noted earlier and radiator due to the problems of glue sticking, institute
Still to need further to be subject to Improvement.
Summary of the invention
It is an object of the invention to the insulating radiation abilities for the high-power device packaging under specific application environment not
Enough problems propose a kind of novel high-power packaging radiating mode and structure, this kind of high-power packaging radiating mode
And structure can effectively solve the problems, such as that high power device insulating radiation ability is inadequate, effectively improve power device and radiator it
Between insulation performance, meet the high pressure resistant insulation cooling requirements in specific environment.
In order to reach this purpose, the present invention provides a kind of high power semi-conductor packagings to promote its opposite heat sink
Insulating capacity guarantees its effective heat dissipating method simultaneously, by high power semi-conductor packaging bottom plate and radiator by high thermal conductivity and
The heat conductive insulating pad of good insulation preformance carries out the heat dissipation of insulation mode, while being insulated on a heat sink by pre-buried fastening nut
Part insulate to fastening nut and radiator, so that forming insulation between fastening bolt structure and radiator, and passes through insulation
Fastening bolt structure fills so that large power semiconductor device bottom plate and heat conductive insulating pad, radiator three's binding face are seamless applying,
Fastening connection, is transmitted to radiator for the heat of high power semi-conductor packaging using heat conductive insulating pad, high-power being promoted
Semiconductor packing device opposite heat sink insulating capacity simultaneously, guarantees that it effectively radiates.
Further, described that the heat of high power semi-conductor packaging is transmitted to radiator using heat conductive insulating pad
It is that high power semi-conductor packaging and radiator are insulated by the heat conductive insulating pad of high thermal conductivity and good insulation preformance, and passes through
Insulating fastening bolt structure is seamless applying by large power semiconductor device bottom plate, heat conductive insulating pad, radiator three, so that big function
The heat of rate semiconductor packing device is transmitted to heat conductive insulating pad by bottom plate, then is delivered to radiator by heat conductive insulating dig pass, by
Radiator goes out the heat dissipation of large power semiconductor device.
Further, it is described by insulating fastening bolt structure by high power semi-conductor packaging bottom plate, it is thermally conductive absolutely
Seamless applying edge pad, radiator three's binding face are to prevent heat conductive insulating pad in high power semi-conductor packaging bottom plate and dissipate
Between hot device, plane is taken to fit together, and by insulating fastening bolt make high power semi-conductor packaging, it is thermally conductive absolutely
Edge pad, radiator fastening are linked together.
Further, the insulating fastening bolt structure is that nut is dielectrically separated from mode by nut insulation part to be embedded to
In radiator, then by fastening bolt across high power semi-conductor packaging body device bottom plate, by high power semi-conductor packaging bottom
Plate heat conductive insulating pad, radiator three's binding face are seamless applying so that high power semi-conductor packaging, heat conductive insulating pad, dissipate
Hot device fastening is linked together, and forms a kind of conductive structure of insulation.
It is further, described that nut is dielectrically separated from mode and is embedded in radiator by nut insulation part is in radiator
On be provided with nut insulation part embedment hole, by nut insulation part be threaded or it is cementing be embedded to embedment hole in, guarantee nut
Mutually insulated state is in radiator；It is connect when fastening bolt passes through high power semi-conductor packaging bottom plate with radiator
When, directly fastening screw screw-in is embedded in radiator top nut, forms bolt fastening connection.
Further, it includes nut and spiral shell in radiator that the nut is dielectrically separated from mode and is embedded to by nut insulation part
It is cementing that the connection of female insulating part, which is that thread connection or nut couple with nut insulation part,.
Further, the material of the nut insulation part is insulating materials, used in the coefficient of expansion and radiator of material
The expansion coefficient similar of material, including ceramics or polymer composite.
Further, the heat conductive insulating pad be high performance heat-conducting insulation material, including ceramics or macromolecule it is compound
Material；Heat conductive insulating pad is clipped between high power semi-conductor packaging bottom plate and radiator, guarantees large power semiconductor device
Opposing insulation, and efficient heat transfer are formed between radiator.
A kind of structure promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance, including radiator and high-power half
Conductor packaging bottom plate, high power semi-conductor packaging bottom plate fit together with radiator, are big function by radiator
Rate semiconductor packing device radiates；Insulating heat-conductive is accompanied between high power semi-conductor packaging bottom plate and radiator
Pad, high power semi-conductor packaging bottom plate is dielectrically separated from radiator, so that high power semi-conductor packaging bottom
Plate forms being bonded for insulating forms with radiator by insulating heat-conductive pad；It is embedded on a heat sink simultaneously and radiator insulation
Fastening nut, by the fastening nut of insulation by high power semi-conductor packaging bottom plate, insulating heat-conductive pad and radiator three
It fits closely together, forms the insulated heat radiation structure of high power semi-conductor packaging.
Further, the fastening nut is, fastening nut pre-buried on a heat sink by fastening nut insulating part
Can be nut with fastening nut insulating part and couple with nut insulation part is that thread connection or nut couple with nut insulation part and be
It is cementing.
The present invention has the advantages that
The present invention promotes high-power half and leads by increasing heat conductive insulating pad in high power semi-conductor packaging bottom plate and radiator
Body packaging opposite heat sink insulating capacity；Pre-buried fastening nut insulating part to fastening nut and dissipates on a heat sink simultaneously
Hot device insulate, and is promoted and is insulated between fastening bolt structure and radiator, will by insulated bolt structure to reach
High power semi-conductor packaging bottom plate, heat conductive insulating pad, radiator three's binding face are seamless applying, are fastenedly connected, and ensure big
The heat of power semiconductor is effectively passed to radiator, is promoting the insulation of high power semi-conductor packaging opposite heat sink
It effectively radiates while ability.Such insulated heat radiation structure is high with insulation performance, structure is reliable, can be according to different capacity device
Part, different insulative cooling requirements flexible design, development cycle short feature, can effectively solve high-power half under specific environment and lead
Body packaging guarantees that it effectively radiates while promoting insulation performance, guarantee its reliability application in certain circumstances.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of an embodiment of the present invention；
Fig. 2 is that Fig. 1 removes the water cooling insulating radiation device structural schematic diagram after high-power packaging and fastening screw；
Fig. 3 is the lateral structure schematic diagram of Fig. 2；
Fig. 4 is the A-A schematic cross-sectional view of Fig. 2；
Fig. 5 is the air-cooled insulating radiation device structural schematic diagram of second of embodiment
Fig. 6 is the schematic cross-sectional view of the line A-A of Fig. 5；
Fig. 7 is the partial enlarged view in Fig. 6 at B；
Fig. 8 is the rear view in Fig. 5；
Fig. 9 is the top view of Fig. 5；
Figure 10 is the nut built-in process schematic diagram of another insulation system.
Description of symbols: radiator (1), fastening nut insulating part (2), fastening nut (3), insulating heat-conductive pad (4), absolutely
Edge glue (5), high power semi-conductor packaging bottom plate (6), fastening screw (7).
Specific embodiment
It is next in the following with reference to the drawings and specific embodiments that the present invention is further explained.
Embodiment one
It can be seen that the present invention relates to high power semi-conductor packaging insulated heat radiation structures, including radiator by attached drawing 1-4
(1), pre-buried fastening nut insulating part (2) on a heat sink, fastening nut (3), high power semi-conductor packaging bottom plate (6)
Insulating heat-conductive pad (4) between radiator, and increase fastening nut (3) and the effect of radiator (1) heat conductive insulating creepage distance
Insulating cement (5).
Wherein, high power semi-conductor packaging bottom plate (6) fits together with radiator (1), is by radiator (1)
High power semi-conductor packaging radiates；: it is pressed from both sides between high power semi-conductor packaging bottom plate (6) and radiator (1)
There are insulating heat-conductive pad (4), high power semi-conductor packaging bottom plate (6) and radiator (1) are dielectrically separated from, so that big function
Rate semiconductor packing device bottom plate (6) forms being bonded for insulating forms with radiator (1) by insulating heat-conductive pad (4)；Exist simultaneously
The fastening nut (3) with radiator (1) insulation is embedded on radiator (1), by the fastening nut (3) of insulation by high-power half
Conductor packaging bottom plate (6), insulating heat-conductive pad (4) and radiator (1) three fit closely together, form high-power half and lead
The insulated heat radiation structure of body packaging.
The characteristics of the present embodiment, is: thermally conductive by being arranged between high power semi-conductor packaging bottom plate and radiator
Felt pad promotes high power semi-conductor packaging to radiator insulating capacity；It is exhausted by pre-buried fastening nut on a heat sink
Edge part carries out edge to fastening nut and radiator to promote insulating capacity between fastening bolt structure and radiator；Pass through increase
The width of fastening nut and the insulating cement (5) of heat conductive insulating creepage distance effect is further ensured that high-power half with thickness design
Insulation performance grade of the conductor packaging relative to radiator；By selecting the material of high thermal conductivity coefficient to lead as high-power half
Heat conductive insulating pad between body packaging bottom plate and radiator, while by the fastening bolt structure of insulation by high power semi-conductor
Packaging, heat conductive insulating pad, radiator three connection securely, guarantee that heat caused by high power semi-conductor packaging is effective
It is transmitted on radiator, reaches and guarantee that it effectively radiates while promoting high power device relative to radiator insulating capacity.
And:
The radiator (1): being that cooling radiator is carried out by liquid cooling mode；
The fastening nut insulating part (2), using the ceramic material with radiator material expansion coefficient similar；
The insulation fastening nut is to pass through spiral shell by an interior outer nut metalwork fastening nut (3) and firm nut insulation part
Line connecting mode or cementation method are combined into an entirety.
The heat conductive insulating pad (4) is that high performance heat-conducting insulation material is made, and heat conductive insulating pad is clamped in greatly
Between power semiconductor device package bottom plate and radiator, large power semiconductor device package floor and radiator base plate were guaranteed both
Energy efficient heat transfer, and opposing insulation；Heat conductive insulating pad includes that ceramics or polymer composite are made.
The insulating cement (5) is the glue of the high class of insulation, is disposed primarily in the periphery of fastening nut and connects felt pad
Periphery, mainly to further increase creepage distance.
The high power semi-conductor packaging bottom plate (6) is the 3300V power envelope that device producer has produced in enormous quantities
Fill the bottom plate of device；
The fastening screw (7) is common metal screw.
The water cooling ceramic wafer insulating radiation device has the pressure resistance DC10kV in power device band high pressure, does not hit within 1 minute
It wears, ability of the leakage current less than 20mA, insulation resistance >=2000M Ω ability.
Embodiment two
The principle of embodiment two and embodiment are only slightly different in structure first is that the same, are that a kind of high-power half is led
Body device isolation radiator, as shown in attached drawing 5-10, including substrate 201, insulator 202, nut 203, structure glue 204, ceramic wafer
205, cooling fin 206.
Substrate is manufactured using 6063 aluminium alloy plates, has superior antiseptic property after high thermal conductivity coefficient and anodic oxidation, thereon
1060 cooling fin of pure aluminum plate is used embedded with cooling fin 206(), IGBT power device installation place adds on substrate mounting surface faces (front)
Work has the heavy platform 207 of 2 director's cube shapes being recessed backward, is respectively machined with one on the bottom surface near the quadrangle of each heavy platform and is used for
The heavy platform threaded hole 208 of insulator is installed.
Insulator is internal and external screw thread structure, one aperture of medium design (small bottom outlet one).Insulator is machined with spiral shell in insulator on front
Pit, insulator lateral surface are machined with the insulator external screw thread to match with heavy platform threaded hole, are respectively equipped in each heavy platform threaded hole
One insulator.Locking glue is applied on insulator internal screw thread, insulator external screw thread.Insulator is made of aluminum oxide ceramic material, it
With excellent insulation performance and smaller dielectric constant and larger breakdown strength, pass through the heavy platform spiral shell on insulator external screw thread and substrate
Pit connects and uses locking glue locking, and aperture guarantees that insulator is bonded with substrate, bottom is small after insulator is packed into for assembling exhaust
Hole is filled with structure glue.
Nut is manufactured using rustproof aluminum alloy 3A21, is internal and external screw thread structure, and centre has a bottom outlet (small bottom outlet two) for assembling
Exhaust.Nut front is equipped with nut inner bolt hole, and nut lateral surface is machined with the nut external screw thread to match with insulator internal screw thread, porcelain
Nut is installed, insulator internal screw thread connect with nut external screw thread and uses locking glue locking in set internal thread hole.Nut end face (front)
A little higher than insulator, the bolt-connection of nut inner thread and installation IGBT power device.
Structure glue is to be locally filled with two component, and structure glue has certain capacity of heat transmission, for fill insulator and nut it
Between difference in height localized voids.Insulator front is coated with heat-conducting type bicomponent structural adhesive 204, and structure glue front is after hardening through adding
Work flushes completely with heavy platform cascaded surface, is convenient for subsequent installation al nitride ceramic board.Then pacify again after applying heat-conducting silicone grease in heavy platform
Fill ceramic wafer.
Ceramic wafer uses the al nitride ceramic board of good heat conductivity, and IGBT power device, ceramics are installed in ceramic wafer plane
It is equipped with the through-hole that passes through for bolt on plate with nut inner bolt hole corresponding position, IGBT power device is finally by being bolted to spiral shell
In female inner bolt hole.Al nitride ceramic board has excellent heat conductivity performance and higher heat-conductivity, has good bending strength, higher hard concurrently
Degree and smaller surface roughness, flatness and smaller dielectric constant, while there is larger electrical breakdown strength, it is adjacent after assembly
Ceramic wafer and the substrate on ceramic wafer periphery have certain interval, for installing the front of IGBT power device slightly on ceramic wafer after assembly
Higher than radiator base plate front.
Dummy slider boss is had on the radiator base plate back side, and heat dissipation film trap, cooling fin extruding substrate are machined on boss
Mode of texturing is fastened in heat dissipation film trap.Cooling fin uses fine aluminium plate material.
The novel air-cooled ceramic wafer insulating radiation device have in power device band high pressure pressure resistance 4kV, do not puncture within 1 minute,
Leakage current is less than the ability of 20mA, while nut inner bolt hole has reply cooling fin insulation resistance >=1000M Ω ability.
The assemble method of air cooling ceramic insulating radiation device, first gets out required components, material, tool and equipment.Again
It is assembled according to the following steps:
Step 1: processing heavy platform and dummy slider boss: the heavy platform at substrate front side IGBT power device installation place processing 4, Mei Gechen
One is respectively machined on bottom surface near the quadrangle of platform for installing the heavy platform threaded hole of insulator；Process heavy platform inner sidewall ladder
When, size positions are calculated, cascaded surface and mounted nut front flush are made；Dummy slider boss is processed in substrate back, convex
Processing heat dissipation film trap on platform；
Step 2: installation insulator and nut: locking glue is coated on insulator external screw thread and nut external screw thread, then in each heavy platform
It is respectively mounted an insulator in threaded hole, nut is installed in insulator；
Step 3: structure glue is applied: after locking glue is dry, because of the gap interstitital texture of difference in height formation between insulator and nut
Structure glue front is machined to flush with heavy platform inner sidewall cascaded surface by glue after structure adhesive curing, forms ceramic wafer mounting surface；
Step 4: installation ceramic wafer: heat-conducting silicone grease is applied on ceramic wafer mounting surface, then ceramic wafer is installed；Pay attention to making phase when installation
Between adjacent ceramic wafer, gap is remained on ceramic wafer side and substrate between the inner sidewall of heavy platform, ceramic wafer front is higher than base
Plate front, makes on ceramic wafer through-hole and nut inner threaded hole to just；
Step 5: after ceramic wafer is fixed, cooling fin installation cooling fin: is fastened on heat dissipation film trap with substrate deformation mode is squeezed
In；
Step 6: detecting and completes the assembling of air cooling ceramic insulating radiation device.
Embodiment three
The principle of embodiment three and embodiment are first is that the same, and only how slightly different in structure the mode of embedded nut is,
As shown in attached drawing 10, fastening nut 302 is fixed in the embedded hole 309 of radiator 301 by insulating gels；Fastening nut
Bottom is the nut cap 308 that outside is polygon, and nut cap 308 is greater than the diameter of nut body, nut cap 308 and nut body 303
It is whole to be embedded in the embedded hole 309 of radiator together, solid isolation is filled on the periphery of nut cap 308 and nut body 303
Gel 304, solid isolation gel 34 is after being filled in nut cap and nut body overall circumference, by being formed by curing insulator,
It is provided with convex block 310 in the embedded hole 309 of radiator 301, for blocking solid isolation gel, prevents solid isolation gel de-
It falls；Felt pad 305 is posted on solid isolation gel, and semiconductor devices 306 is posted on felt pad 305；Semiconductor devices 306 is logical
It crosses stud 307 to be fixed on radiator 301, the insulation system for forming semiconductor devices and radiator connects.
Above-mentioned listed embodiment, only carries out clear, complete description to technical solution of the present invention in conjunction with attached drawing；It is aobvious
So, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, all other embodiment obtained by those of ordinary skill in the art without making creative efforts, all
Belong to the scope of protection of the invention.
Description through the foregoing embodiment, it is known that the invention further relates to a kind of high power semi-conductor packagings to mention
It rises its opposite heat sink insulating capacity and guarantees its effective heat dissipating method simultaneously, by high power semi-conductor packaging bottom plate and heat dissipation
Device carries out the heat dissipation of insulation mode by the heat conductive insulating pad of high thermal conductivity and good insulation preformance, while on a heat sink by pre-buried
Fastening nut insulating part insulate to fastening nut and radiator so that being formed between fastening bolt structure and radiator exhausted
Edge, and filled by insulating fastening bolt structure so that large power semiconductor device bottom plate and heat conductive insulating pad, radiator three paste
Conjunction face is seamless applying, and the heat of high power semi-conductor packaging is transmitted to radiator using heat conductive insulating pad by fastening connection,
It is promoting high power semi-conductor packaging opposite heat sink insulating capacity simultaneously, is guaranteeing that it effectively radiates.
Further, described that the heat of high power semi-conductor packaging is transmitted to radiator using heat conductive insulating pad
It is that high power semi-conductor packaging and radiator are insulated by the heat conductive insulating pad of high thermal conductivity and good insulation preformance, and passes through
Insulating fastening bolt structure is seamless applying by large power semiconductor device bottom plate, heat conductive insulating pad, radiator three, so that big function
The heat of rate semiconductor packing device is transmitted to heat conductive insulating pad by bottom plate, then is delivered to radiator by heat conductive insulating dig pass, by
Radiator goes out the heat dissipation of large power semiconductor device.
Further, it is described by insulating fastening bolt structure by high power semi-conductor packaging bottom plate, it is thermally conductive absolutely
Seamless applying edge pad, radiator three's binding face are to prevent heat conductive insulating pad in high power semi-conductor packaging bottom plate and dissipate
Between hot device, plane is taken to fit together, and by insulating fastening bolt make high power semi-conductor packaging, it is thermally conductive absolutely
Edge pad, radiator fastening are linked together.
Further, the insulating fastening bolt structure is that nut is dielectrically separated from mode by nut insulation part to be embedded to
In radiator, then by fastening bolt across high power semi-conductor packaging body device bottom plate, by high power semi-conductor packaging bottom
Plate heat conductive insulating pad, radiator three's binding face are seamless applying so that high power semi-conductor packaging, heat conductive insulating pad, dissipate
Hot device fastening is linked together, and forms a kind of conductive structure of insulation.
It is further, described that nut is dielectrically separated from mode and is embedded in radiator by nut insulation part is in radiator
On be provided with nut insulation part embedment hole, by nut insulation part be threaded or it is cementing be embedded to embedment hole in, guarantee nut
Mutually insulated state is in radiator；It is connect when fastening bolt passes through high power semi-conductor packaging bottom plate with radiator
When, directly fastening screw screw-in is embedded in radiator top nut, forms bolt fastening connection.
Further, it includes nut and spiral shell in radiator that the nut is dielectrically separated from mode and is embedded to by nut insulation part
It is cementing that the connection of female insulating part, which is that thread connection or nut couple with nut insulation part,.
Further, the material of the nut insulation part is insulating materials, used in the coefficient of expansion and radiator of material
The expansion coefficient similar of material, including ceramics or polymer composite.
Further, the heat conductive insulating pad be high performance heat-conducting insulation material, including ceramics or macromolecule it is compound
Material；Heat conductive insulating pad is clipped between high power semi-conductor packaging bottom plate and radiator, guarantees large power semiconductor device
Opposing insulation, and efficient heat transfer are formed between radiator.
The present invention has the advantages that
Large power semiconductor device bottom plate and radiator base plate are fitted in by the present invention by the way of by by heat conductive isolation sheet
Together, and by clamping device by large power semiconductor device bottom plate and radiator base plate it is fastenedly connected, so that high-power half is led
Body device bottom plate and radiator base plate and heat conductive isolation sheet can fit closely and the fever of large power semiconductor device allowed to pass together
It is delivered to radiator, there is good heat dissipation effect, the high feature of insulation performance can effectively solve the heat dissipation of large power semiconductor device
Problem.
Claims (10)
1. a kind of method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance, it is characterised in that: by high-power half
Conductor packaging bottom plate and radiator carry out the heat dissipation of insulation mode by the heat conductive insulating pad of high thermal conductivity and good insulation preformance,
It is insulated on a heat sink by pre-buried fastening nut insulating part to fastening nut and radiator simultaneously, so that fastening bolt
Insulation is formed between structure and radiator, and filled by insulating fastening bolt structure so that large power semiconductor device bottom plate with lead
Thermal insulation pad, radiator three's binding face are seamless applying, fastening connection, using heat conductive insulating pad by high power semi-conductor wrapper
The heat of part is transmitted to radiator, is promoting high power semi-conductor packaging opposite heat sink insulating capacity simultaneously, is guaranteeing it
Effectively heat dissipation.
2. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as described in claim 1, feature exist
In: it is described that the heat of high power semi-conductor packaging is transmitted to radiator using heat conductive insulating pad is to lead high-power half
Body packaging and radiator are insulated by the heat conductive insulating pad of high thermal conductivity and good insulation preformance, and pass through insulating fastening bolt knot
Structure is seamless applying by large power semiconductor device bottom plate, heat conductive insulating pad, radiator three, so that high power semi-conductor wrapper
The heat of part is transmitted to heat conductive insulating pad by bottom plate, then is delivered to radiator by heat conductive insulating dig pass, will be high-power by radiator
The heat dissipation of semiconductor devices is gone out.
3. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 2, feature exist
In: it is described by insulating fastening bolt structure by high power semi-conductor packaging bottom plate, heat conductive insulating pad, radiator three
Seamless applying binding face is prevented heat conductive insulating pad between high power semi-conductor packaging bottom plate and radiator, is taken flat
Face paste is combined, and by insulating fastening bolt high power semi-conductor packaging, heat conductive insulating pad, radiator is fastened
It is linked together.
4. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 2, feature exist
In: the insulating fastening bolt structure is nut to be dielectrically separated from mode by nut insulation part to be embedded in radiator, then incite somebody to action
Fastening bolt pass through high power semi-conductor packaging body device bottom plate, by high power semi-conductor packaging bottom plate heat conductive insulating pad,
Radiator three's binding face is seamless applying, so that the fastening of high power semi-conductor packaging, heat conductive insulating pad, radiator is connected in
Together, a kind of conductive structure of insulation is formed.
5. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 4, feature exist
In: it is described that nut is dielectrically separated from mode and is embedded to by nut insulation part is to be provided with nut insulation on a heat sink in radiator
Part is embedded to hole, and nut insulation part is threaded or cementing be embedded to is embedded in hole, guarantees that nut is in phase with radiator
Mutual state of insulation；When fastening bolt, which passes through high power semi-conductor packaging bottom plate, to be connect with radiator, spiral shell will be directly fastened
Nail is screwed in and is embedded in radiator top nut, forms bolt fastening connection.
6. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 5, feature exist
In: the nut is dielectrically separated from mode and is embedded in radiator to couple including nut with nut insulation part by nut insulation part is
It is cementing that thread connection or nut couple with nut insulation part.
7. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 2, feature exist
In: the material of the nut insulation part is insulating materials, the coefficient of expansion of material and the coefficient of expansion of radiator material therefor
It is close, including ceramics or polymer composite.
8. the method for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 2, feature exist
In: the heat conductive insulating pad is high performance heat-conducting insulation material, including ceramics or polymer composite；Heat conductive insulating pad
It is clipped between high power semi-conductor packaging bottom plate and radiator, guarantees to be formed between large power semiconductor device and radiator
Opposing insulation, and efficient heat transfer.
9. a kind of structure for promoting the insulation of semiconductor devices opposite heat sink and heat dissipation performance, including radiator (1) and high-power
Semiconductor packing device bottom plate (6), high power semi-conductor packaging bottom plate (6) fit together with radiator (1), by dissipating
Hot device (1) is that high power semi-conductor packaging radiates；It is characterized by: in high power semi-conductor packaging bottom plate
(6) it is accompanied between radiator (1) insulating heat-conductive pad (4), to high power semi-conductor packaging bottom plate (6) and radiator (1)
It is dielectrically separated from, so that high power semi-conductor packaging bottom plate (6) is formed by insulating heat-conductive pad (4) and radiator (1)
The fitting of insulating forms；The fastening nut (3) with radiator (1) insulation is embedded on radiator (1) simultaneously, passes through insulation
Fastening nut (3) fits closely high power semi-conductor packaging bottom plate (6), insulating heat-conductive pad (4) and radiator (1) three
Together, the insulated heat radiation structure of high power semi-conductor packaging is formed.
10. promoting the structure of the insulation of semiconductor devices opposite heat sink and heat dissipation performance as claimed in claim 9, feature exists
In: the fastening nut (3) is pre-buried on a heat sink by fastening nut insulating part (2).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810743968.1A CN108695280A (en) | 2018-07-09 | 2018-07-09 | A kind of air cooling ceramic insulating radiation device and high pressure resistant insulation heat dissipating method |
| CN2018107439681 | 2018-07-09 |
Publications (2)
| Publication Number | Publication Date |
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| CN110379783A true CN110379783A (en) | 2019-10-25 |
| CN110379783B CN110379783B (en) | 2021-12-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810743968.1A Pending CN108695280A (en) | 2018-07-09 | 2018-07-09 | A kind of air cooling ceramic insulating radiation device and high pressure resistant insulation heat dissipating method |
| CN201910609492.7A Active CN110379783B (en) | 2018-07-09 | 2019-07-08 | Method and structure for improving insulation and heat dissipation performance of semiconductor device relative to radiator |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201810743968.1A Pending CN108695280A (en) | 2018-07-09 | 2018-07-09 | A kind of air cooling ceramic insulating radiation device and high pressure resistant insulation heat dissipating method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111867324A (en) * | 2020-06-30 | 2020-10-30 | 北京卫星制造厂有限公司 | Heat radiation structure suitable for spacecraft high-power device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113825343B (en) * | 2021-11-23 | 2022-02-08 | 华海通信技术有限公司 | Be applied to high-pressure optical communication equipment's insulating heat-transfer device |
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Also Published As
| Publication number | Publication date |
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| CN108695280A (en) | 2018-10-23 |
| CN110379783B (en) | 2021-12-14 |
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