CN110364625A - A kind of perovskite quantum dot phototransistor for weak light detection and preparation method - Google Patents

Abstract

An embodiment of the present invention provides a perovskite quantum dot phototransistor for weak light detection, which is characterized by comprising: a base substrate with an upper surface level; a gate electrode is located on the base substrate; a gate dielectric layer and a base liner The bottom fully surrounds the gate electrode, and the projected area is equal to the base substrate; the metal oxide semiconductor film is located on the gate dielectric layer; the source and drain metal electrodes are located on the gate dielectric layer and the metal oxide semiconductor film; the charge transport interface layer is located on the source and drain In the middle of the metal electrode; the perovskite quantum dot material layer is located directly above the charge transport interface layer and completely covers the charge transport interface layer; the projected area of the metal oxide semiconductor film, the charge transport interface layer film, and the perovskite quantum dot material layer is equal to the gate electrode .

Description

A kind of perovskite quantum dot phototransistor for weak light detection and preparation method

technical field

The invention relates to the field of photodetectors, in particular to a perovskite quantum dot phototransistor for weak light detection and a preparation method.

Background technique

Metal oxide semiconductor thin film transistors, especially indium gallium zinc oxide (IGZO) thin film transistors have the characteristics of stability, high mobility, transparency, and good uniformity, and are widely used in display panel arrays and detector arrays. Low absorptivity and no strong photoresponse to weak light. Perovskite quantum dot materials have the characteristics of high light absorption rate, wide light absorption range, long carrier diffusion length, long carrier lifetime, adjustable band gap, etc. The excellent light absorption properties of perovskite quantum dot materials make their It is also widely used in the field of photodetectors. In order to achieve better low-light intensity detection, a new type of phototransistor detector can be prepared by combining perovskite quantum dot materials with metal oxide transistors.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide a perovskite quantum dot phototransistor for weak light detection and a preparation method thereof. The perovskite quantum dot material is combined with a metal oxide semiconductor transistor through a dense charge transport interface layer to provide a phototransistor with wide spectral response, low dark current, strong detection of weak light, and simple fabrication process. It has a high success rate and has great potential in the field of photodetectors.

In order to achieve the above purpose, on the one hand, an embodiment of the present invention provides a perovskite quantum dot phototransistor for weak light detection, which is characterized in that: it includes:

A base substrate 1 with an upper surface level;

The gate electrode 2 is located on the base substrate 1;

The gate dielectric layer 3 and the base substrate 1 completely surround the gate electrode 2, and the projected area is equal to the base substrate 1;

The metal oxide semiconductor film 4 is located on the gate dielectric layer 3;

The source-drain metal electrode 5 is located on the gate dielectric layer 3 and the metal oxide semiconductor thin film 4;

The charge transport interface layer 6 is located in the middle of the source-drain metal electrode 5;

The perovskite quantum dot material layer 7 is located directly above the charge transport interface layer 6 and completely covers the charge transport interface layer 6;

The projected area of the metal oxide semiconductor thin film 4 , the charge transport interface layer thin film 6 , and the perovskite quantum dot material layer 7 is equal to the gate electrode 2 .

Further, the base substrate 1 is at least one of: silicon substrate, glass substrate, quartz substrate, polyimide PI substrate, polyethylene terephthalate PET substrate and polyethylene naphthalene Ethylene glycol formate PEN substrate;

Further, the gate electrode 2 and the source-drain metal electrode 5 are molybdenum, gold, silver, aluminum, copper material electrodes;

Further, the gate dielectric layer 3 is made of silicon oxide SiOx, silicon nitride SiNx, aluminum oxide Al ₂ O ₃ , and hafnium oxide HfO ₂ ;

Further, the materials of the metal oxide semiconductor thin film 4 include: indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, aluminum doped zinc oxide AZO, zinc tin oxide ZTO, magnesium zinc oxide MZO;

Further, the material of the charge transport interface layer 6 includes: fullerene C60, fullerene derivative PCBM, fullerene derivative ICBA, mixture of fullerene and polymethyl methacrylate PMMA;

Further, the chemical formula of the material of the perovskite quantum dot material layer 7 is ABX ₃ , and A includes methylamine ions CH ₃ NH ₃ ⁺ , methyl diamine ions NH ₂ CHNH ₂ ⁺ , cesium ions CS ⁺ , and rubidium ions Rb ⁺ ; B includes lead ion Pb ²⁺ , tin ion Sn ²⁺ , bismuth ion Bi ²⁺ , europium ion Eu ²⁺ ; X includes iodide ion I ^- , chloride ion Cl ^- or bromide ion Br ^- ; the perovskite The quantum dot material layer has a broadband absorption range.

Further, the thickness of the gate electrode 2 is 30 nm to 200 nm;

Further, the thickness of the gate dielectric layer 3 is 100 nm to 400 nm;

Further, the thickness of the metal oxide semiconductor thin film 4 is 10 nm to 100 nm;

Further, the thickness of the source-drain metal electrode 5 is 30nm to 200nm, the length of the formed channel is 1um to 100um, and the width is 1um to 1000um;

Further, the thickness of the charge transport interface layer 6 is 10 nm to 90 nm;

Further, the diameter of the perovskite quantum dot material layer 7 is 2-10 nm, and the thickness is 2-20 nm.

On the other hand, an embodiment of the present invention provides a method for fabricating a perovskite quantum dot phototransistor for low-light detection, characterized in that it includes:

The gate electrode 2 is deposited on the base substrate 1 by a magnetron sputtering method or a vacuum evaporation method, and a gate electrode pattern is formed by a photolithography process;

The gate electrode dielectric layer 3 is deposited on the base substrate 1 and the gate electrode 2 by a magnetron sputtering method or a chemical vapor deposition method, and a gate electrode pattern is formed by a photolithography process;

The metal oxide semiconductor thin film 4 is deposited on the gate electrode dielectric layer 3 by a magnetron sputtering method or a solution processing method, and a block active region pattern is formed by a photolithography process;

The source-drain metal electrode 5 is deposited on the gate dielectric layer 3 and the metal oxide semiconductor thin film 4 by magnetron sputtering or vacuum evaporation, and a source-drain metal electrode pattern is formed by a photolithography process; The metal oxide oxide semiconductor thin film 4 has a certain overlap;

The device is annealed in an oxygen atmosphere, a nitrogen atmosphere or an air atmosphere, the annealing temperature is 100°C to 450°C, and the annealing time is 0.5 hours to 4 hours;

A solution spin coating method, or a blade coating method, or a spraying method, or a vacuum evaporation method, or a chemical vapor deposition method, or a screen printing method, or a roll-to-roll printing method is used to prepare a film on the oxide semiconductor thin film 4. A charge transport interface layer 6 is formed; a layer 7 of perovskite quantum dot material is prepared on the charge transport interface layer 6 by a solution spin coating method, a blade coating method, or a spray coating method.

Further, through at least one of silicon substrate, glass substrate, quartz substrate, polyimide PI substrate, polyethylene terephthalate PET substrate and polyethylene naphthalate PEN substrate A kind of making the base substrate 1;

Further, the gate electrode 2 is made of molybdenum, gold, silver, aluminum, and copper material electrodes;

Further, the gate dielectric layer 3 is made of materials of silicon oxide SiOx, silicon nitride SiNx, aluminum oxide Al ₂ O ₃ , and hafnium oxide HfO ₂ .

Further, the metal oxide semiconductor thin film 4 is made of indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, aluminum doped zinc oxide AZO, zinc tin oxide ZTO, and magnesium zinc oxide MZO materials;

Further, the source-drain metal electrode 5 is fabricated by using molybdenum, gold, silver, aluminum, and copper material electrodes;

Further, the charge transport interface layer 6 is made by a mixture of fullerene C60, fullerene derivative PCBM, fullerene derivative ICBA, fullerene and polymethyl methacrylate PMMA;

Further, the chemical formula of the material of the perovskite quantum dot material layer 7 is ABX ₃ ; A includes methylamine ion CH ₃ NH ₃ ⁺ , methyl diamine ion NH ₂ CHNH ₂ ⁺ , cesium ion CS ⁺ , rubidium ion Rb ⁺ ; B includes lead ion Pb ²⁺ , tin ion Sn ²⁺ , bismuth ion Bi ²⁺ , europium ion Eu ²⁺ ; X includes iodide ion I ^- , chloride ion Cl ^- or bromide ion Br ^- ; the perovskite The quantum dot material layer has a broadband absorption range.

Further, the thickness of the gate electrode 2 is set to be 30 nm to 200 nm;

Further, the thickness of the gate dielectric layer 3 is set to be 100 nm to 400 nm;

Further, the thickness of the metal oxide semiconductor thin film 4 is set to be 10 nm to 100 nm.

Further, the thickness of the source-drain metal electrode 5 is set to be 30nm to 200nm, the length of the formed channel is 1um to 100um, and the width is 1um to 1000um;

Further, the thickness of the charge transport interface layer 6 is set to be 10 nm to 90 nm;

Further, the diameter of the perovskite quantum dot material layer 7 is set to be 2-10 nm, and the thickness is set to be 2-20 nm.

The above technical solution has the following beneficial effects: the embodiment of the present invention adopts a metal oxide semiconductor film as a phototransistor channel material, a perovskite quantum dot material as a light absorption layer material, and a charge transport interface layer film combines the metal oxide semiconductor film and calcium The titanium oxide quantum dot material layer is separated to prepare a transistor with a metal oxide semiconductor thin film and a perovskite quantum dot material layer separated by a charge transport interface layer, which not only uses the metal oxide represented by indium gallium zinc oxide IGZO The characteristics of high mobility, transparency and good uniformity of the material semiconductor, and the use of perovskite quantum dot material, a light absorbing material with excellent performance, uses its strong absorption characteristics for low light intensity, long carrier diffusion length, and band width. The feature of adjustable gap overcomes the weakness of the metal oxide semiconductor material represented by IGZO, which has a large forbidden band width and cannot effectively absorb weak light, and can be adjusted by adjusting the content of X element in the perovskite quantum dot material. Adjust the forbidden band width. The charge transport interface layer film separates the perovskite quantum dot material layer from the metal oxide semiconductor film, avoiding the IGZO village caused by the ions of the perovskite quantum dot material layer entering the metal oxide semiconductor film represented by IGZO. deterioration of material properties. Therefore, the phototransistor for weak light detection prepared by combining the metal oxide semiconductor/perovskite quantum dot hybrid structure can fully combine the high mobility of the metal oxide semiconductor thin film and the high light absorption performance of the perovskite quantum dot material layer. The transistor has the technical effect of low dark current, wide spectral response, and high light response to low light intensity; the preparation method of the embodiment of the present invention has good compatibility with the current silicon-based process platform, the preparation process of the transistor is simple, and the success rate of the transistor is high.

Description of drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.

1 is a schematic structural diagram of a phototransistor in Embodiment 1 of the present invention;

Fig. 2 is the flow chart of the preparation method of phototransistor according to the present invention;

Fig. 3 is the transfer curve of the phototransistor of implementation 1 of the present invention under the ultraviolet light of wavelength 350nm;

Fig. 4 is the transfer curve of the phototransistor of embodiment 1 of the present invention under visible light illumination of wavelength 500nm;

5 is the transfer curve of the phototransistor and the metal oxide intrinsic phototransistor in the embodiment 1 of the present invention under the irradiation of weak light intensity in the ultraviolet region;

Reference numerals are indicated as: 1-base substrate, 2-gate electrode, 3-gate dielectric layer, 4-metal oxide semiconductor thin film, 5-source-drain metal electrode, 6-charge transport interface layer, 7-perovskite Mine quantum dot material layer.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

In order to achieve the above purpose, on the one hand, an embodiment of the present invention provides a perovskite quantum dot phototransistor for weak light detection, which is characterized in that: it includes:

a base substrate with an upper surface level;

the gate electrode is located on the base substrate;

The gate dielectric layer and the base substrate fully surround the gate electrode, and the projected area is equal to the base substrate;

The metal oxide semiconductor thin film is on the gate dielectric layer;

The source-drain metal electrodes are located on the gate dielectric layer and the metal oxide semiconductor thin film;

The charge transport interface layer is located between the source-drain metal electrodes;

The perovskite quantum dot material layer is located just above the charge transport interface layer and completely covers the charge transport interface layer;

The projected area of the metal oxide semiconductor thin film, the charge transport interface layer thin film, and the perovskite quantum dot material layer is equal to the gate electrode.

Further, the basic substrate is at least one of: silicon substrate, glass substrate, quartz substrate, polyimide PI substrate, polyethylene terephthalate PET substrate and polyethylene naphthalate Glycol ester PEN substrate;

Further, the gate electrode and the source-drain metal electrode are molybdenum, gold, silver, aluminum, copper material electrodes;

Further, the gate dielectric layer is made of silicon oxide SiOx, silicon nitride SiNx, aluminum oxide Al ₂ O ₃ , and hafnium oxide HfO ₂ ;

Further, the material of the metal oxide semiconductor thin film includes: one or more of indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, aluminum doped zinc oxide AZO, zinc tin oxide ZTO, and magnesium zinc oxide MZO kind;

Further, the material of the charge transport interface layer includes: fullerene C60, fullerene derivative PCBM, fullerene derivative ICBA, blend of fullerene and its derivatives and polymethyl methacrylate PMMA one or more of the bodies;

Further, the chemical formula of the material of the perovskite quantum dot material layer is ABX ₃ , and A includes methylamine ion CH ₃ NH ₃ ⁺ , methyldiamine ion NH ₂ CHNH ₂ ⁺ , cesium ion CS ⁺ , rubidium ion Rb ⁺ And the blend formed by mixing these kinds of cations according to a certain proportion; B includes lead ions Pb ²⁺ , tin ions Sn ²⁺ , bismuth ions Bi ²⁺ , europium ions Eu ²⁺ and these kinds of cations according to a certain proportion The resulting blend is mixed; X includes iodide ion I ^- , chloride ion Cl ^- or bromide ion Br ^- ; the perovskite quantum dot material has a broad absorption range.

Further, the thickness of the gate electrode is 30nm to 200nm;

Further, the thickness of the gate dielectric layer is 100nm to 400nm;

Further, the thickness of the metal oxide semiconductor thin film is 10 nm to 100 nm;

Further, the thickness of the source-drain metal electrode is 30nm to 200nm, the length of the formed channel is 1um to 100um, and the width is 1um to 1000um;

Further, the thickness of the charge transport interface layer is 10nm to 90nm;

Further, the diameter of the perovskite quantum dot material layer is 2-10 nm, and the thickness is 2-20 nm.

On the other hand, the present invention provides a method for fabricating a perovskite quantum dot phototransistor for weak light detection, characterized in that it includes:

1. Basic substrate cleaning

A glass substrate or a silicon substrate covered with 300 nm silicon dioxide was selected as the substrate material. Before the experiment, the substrates were sonicated in deionized water, acetone, and alcohol for 15 minutes each. Dry under nitrogen.

2. Preparation of gate electrode, taking the preparation of metal Mo as an example

Put the substrate into the magnetron sputtering stage. When the vacuum in the sputtering stage box reaches 1.5×10 ^-3 Pa, argon gas Ar is introduced to make the vacuum degree in the chamber stable at 0.36Pa, and the sputtering with DC power of 80W is used. For 150 s, a Mo thin film with a thickness of 150 nm was obtained. The gate electrode is patterned by photolithographic techniques.

The gate electrode is grown on the base substrate by a magnetron sputtering method or a vacuum evaporation method, and a gate electrode pattern is formed by a photolithography process.

3. Preparation of gate dielectric layer, taking the preparation of SiO ₂ as an example

The sample was put into the reaction chamber of the plasma-enhanced chemical vapor deposition PECVD system, the reaction chamber was pumped to high vacuum, the temperature of the reaction chamber was raised to 300 °C, and the radio frequency power was 30 W, and then the flow rate of 100 sccm of SiH ₄ and 400sccm of N ₂ O, the pressure is controlled at 0.13Pa, and a 200 nm thick SiO ₂ film is grown.

The gate electrode dielectric layer is grown on the gate electrode by a magnetron sputtering method or a chemical vapor deposition method, and a gate electrode pattern is formed by a photolithography process.

4. Preparation of metal oxide semiconductor layers, taking the preparation of indium gallium zinc oxide IGZO as an example

(1) Preparation of IGZO thin films

Put the sample into the magnetron sputtering stage, when the vacuum in the sputtering stage box reaches 5×10 ^-4 Pa, pass argon gas Ar and oxygen O2, the flow ratio is 47:3, and use the DC power of 100W to sputter for 300s , a 40 nm thick IGZO film was obtained.

(2) Graphicalization of IGZO

Spin-coat the photoresist, photolithography and etch the IGZO film with dilute hydrochloric acid; remove the photoresist with acetone ultrasonically.

The metal oxide semiconductor thin film is directly grown on the gate electrode dielectric layer by magnetron sputtering method or solution processing method, and a block-shaped active area pattern is formed by a photolithography process.

5. Preparation of source-drain metal electrode Mo

(1) Preparation before magnetron sputtering

The photoresist is spin-coated, and the effective area is exposed by photolithography, and the ineffective area is covered by the photoresist.

(2) Preparation of Mo electrode

Put the photoetched substrate into the magnetron sputtering stage. When the vacuum in the sputtering stage box reaches 9.9 × 10 ^-4 Pa, argon gas Ar is introduced to stabilize the vacuum in the chamber at 0.36 Pa, and a DC power supply is used. The power of 80W was used for sputtering for 150s to obtain a Mo thin film with a thickness of 150nm, and a source-drain pattern was formed by stripping.

(3) The sample is placed in the reaction chamber of the iso-RIE system, and the gate electrode is opened.

The source-drain metal electrodes are grown directly on the gate dielectric layer by the magnetron sputtering method or the vacuum evaporation method, and the source-drain metal electrode pattern is formed by a photolithography process; at this time, the source-drain metal electrodes and the metal oxide oxide The semiconductor thin films have a certain overlap.

6. Annealing treatment

The transistor device with the fabricated metal oxide thin film was annealed under the condition of pure oxygen at 250° C. for 1 hour.

The device is annealed in an oxygen atmosphere, a nitrogen atmosphere or an air atmosphere, the annealing temperature is 100° C. to 450° C., and the annealing time is 0.5 hour to 4 hours.

7. Preparation of charge transport interface layer film, taking the fullerene derivative PCBM as an example.

A 20 mg/ml solution of PCBM was dropped onto the IGZO transistor for spin coating at 2000 rpm for 40 s, and then annealed at 100 °C for 10 min.

A layer is prepared on the oxide semiconductor thin film by a solution spin coating method, a blade coating method, a spray coating method, a vacuum evaporation method, a chemical vapor deposition method, a screen printing method, or a roll-to-roll printing method the charge transport interface layer (6);

8. Preparation of perovskite quantum dot layer, taking inorganic perovskite CsPbBr ₃ as an example.

Drop 20mg/ml of PCBM solution onto the PCBM and spin for 45s at 2000 rpm, and let it dry naturally.

A layer of perovskite quantum dot material is prepared on the charge transport interface layer by a solution spin coating method, a blade coating method, or a spray coating method.

To sum up, it can be seen that the process of preparing IGZO transistors is compatible with traditional silicon-based processes, and the spin coating process for preparing PCBM and perovskite quantum dots is also suitable for large-area preparation processes, which ensures that the phototransistor has a large area in the detection field and is integrated. requirements.

Corresponding to the above method embodiment, FIG. 3 is the transfer curve of the phototransistor in Embodiment 1 of the present invention under ultraviolet light with a wavelength of 350 nm. Fig. 4 is the transfer curve of the phototransistor of the embodiment 1 of the present invention under the irradiation of visible light with a wavelength of 500 nm; Fig. 5 is the transfer of the phototransistor of the embodiment 1 of the present invention and the metal oxide intrinsic phototransistor under the irradiation of weak light intensity in the ultraviolet region curve.

Photoelectric performance test: the source-drain voltage is 30V, the gate electrode voltage changes from -30V to 20V, the light intensity is 8.95μW/cm ² and 207.3μW/cm ² , and the wavelengths are 350nm ultraviolet light and 500nm visible light.

From the above, it can be seen that the test wavelength range of the phototransistor combined with the metal oxide semiconductor/perovskite quantum dots ranges from the ultraviolet region to the visible region, and due to the introduction of the perovskite quantum dots, compared with the intrinsic metal oxide phototransistor, the device has better performance. There is a better response for low light intensities (8.95 μW/cm ² ).

The specific embodiments described above further describe the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. a kind of perovskite quantum dot light electric transistor for weak light detection, it is characterised in that: include:

The base substrate (1) of upper surface level；

Gate electrode (2) is located on base substrate (1)；

Gate dielectric layer (3) and base substrate (1) all-around-gate electrode (2), and projected area is equal to base substrate (1)；

Metal oxide semiconductor films (4) are located on gate dielectric layer (3)；

Source and drain metal electrodes (5) are located on gate dielectric layer (3) and metal oxide semiconductor films (4)；

It is intermediate that charge transport interface layer (6) is located at source and drain metal electrodes (5)；

Perovskite quanta point material layer (7) is located at right above charge transport interface layer (6) and charge transport interface layer is completely covered (6)；

Metal oxide semiconductor films (4), charge transport interface layer film (6), perovskite quanta point material layer (7) perspective plane Product is equal to gate electrode (2).

2. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that: Include:

The base substrate (1) is at least one: silicon substrate, quartz substrate, polyimides PI substrate, gathers to benzene at glass substrate Naphthalate PET substrate and polyethylene naphthalate PEN substrate；

The gate electrode (2) and source and drain metal electrodes (5) are molybdenum, gold, silver, aluminium, copper product electrode；

The gate dielectric layer (3) is silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al₂O₃, hafnium oxide HfO₂Material.

3. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that: Include:

The material of the metal oxide semiconductor films (4) include: indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；

The material of the charge transport interface layer (6) includes: Fullerene C20, fullerene derivate PCBM, fullerene derivate The mixture of ICBA, fullerene and polymetylmethacrylate；

The chemical formula of the material of the perovskite quanta point material layer (7) is ABX₃；A includes methylamine ion CH₃NH₃ ⁺, methanediamine from Sub- NH₂CHNH₂ ⁺, cesium ion CS⁺, rubidium ion Rb⁺；B includes lead ion Pb²⁺, tin ion Sn²⁺, bismuth ion Bi²⁺, europium ion Eu²⁺； X includes iodide ion I^-, chloride ion Cl^-Or bromide ion Br^-；The perovskite quanta point material layer has broadband absorption range.

4. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that: Include:

The gate electrode (2) is with a thickness of 30nm to 200nm；

The gate dielectric layer (3) is with a thickness of 100nm to 400nm；

The metal oxide semiconductor films (4) with a thickness of 10nm to 100nm.

5. a kind of perovskite quantum dot light electric transistor for weak light detection according to claim 1, it is characterised in that: Include:

The source and drain metal electrodes (5) are 1um to 100um, width 1um with a thickness of 30nm to 200nm, the channel length of formation To 1000um；

The charge transport interface layer (6) with a thickness of 10nm to 90nm；

The diameter of the perovskite quanta point material layer (7) is 2-10nm, with a thickness of 2-20nm.

6. a kind of perovskite quantum dot optoelectronic preparation method of transistor for weak light detection, it is characterised in that: include:

Gate electrode (2) is deposited on base substrate (1) using magnetron sputtering method or vacuum vapour deposition, is formed by lithographic process Gate electrode figure；

Base substrate (1) and gate electrode (2) are deposited on using magnetron sputtering method or chemical vapour deposition technique gate electrode dielectric layer (3) On, gate electrode figure is formed by lithographic process；

Metal oxide semiconductor films (4) are deposited on by gate electrode dielectric layer (3) using magnetron sputtering method or solution processing method On, blocky active area figure is formed by lithographic process；

Source and drain metal electrodes (5) are deposited on by gate dielectric layer (3) and metal oxide using magnetron sputtering method or vacuum vapour deposition On semiconductive thin film (4), source and drain metal electrodes figure is formed by lithographic process；The source and drain metal electrodes (5) and metal oxygen Compound oxide semiconductor thin-film (4) has certain overlapping；

Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature is 100 DEG C to 450 DEG C, Annealing time is 0.5 hour to 4 hours；

Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk-screen printing Method or roll-to-roll print process prepare a layer charge transport interface layer (6) on oxide semiconductor thin-film (4)；

One layer of perovskite quantum dot is prepared on charge transport interface layer (6) using solution spin-coating method or knife coating or spray coating method Material layer (7).

7. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6, It is characterized in that: including:

By silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, polyethylene terephtalate substrate and Polyethylene naphthalate PEN substrate at least one makes the base substrate (1)；

Pass through gate electrode (2) described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；

Pass through silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al₂O₃, hafnium oxide HfO₂Material makes the gate dielectric layer (3).

8. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6, It is characterized in that: including:

Pass through indium gallium zinc oxide IGZO, indium zinc tin oxide IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesiam-zinc-oxygen Compound MZO material makes the metal oxide semiconductor films (4)；

Pass through source and drain metal electrodes (5) described in molybdenum, gold, silver, aluminium, copper product electrode fabrication；

Pass through Fullerene C20, fullerene derivate PCBM, fullerene derivate ICBA, fullerene and polymethyl methacrylate The mixture material of PMMA makes the charge transport interface layer (6)；

The chemical formula for making the material of the perovskite quanta point material layer (7) is ABX₃；A includes methylamine ion CH₃NH₃ ⁺, first two Amine ion NH₂CHNH₂ ⁺, cesium ion CS⁺, rubidium ion Rb⁺；B includes lead ion Pb²⁺, tin ion Sn²⁺, bismuth ion Bi²⁺, europium ion Eu²⁺；X includes iodide ion I^-, chloride ion Cl^-Or bromide ion Br^-；The perovskite quanta point material layer has broadband absorption model It encloses.

9. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6, It is characterized in that: including:

The gate electrode (2) is set with a thickness of 30nm to 200nm；

The gate dielectric layer (3) is set with a thickness of 100nm to 400nm；

Be arranged the metal oxide semiconductor films (4) with a thickness of 10nm to 100nm.

10. a kind of perovskite quantum dot light electric transistor preparation method for weak light detection according to claim 6, It is characterized in that: including:

The source and drain metal electrodes (5) are set with a thickness of 30nm to 200nm, the channel length of formation is 1um to 100um, width For 1um to 1000um；

Be arranged the charge transport interface layer (6) with a thickness of 10nm to 90nm；

The diameter that the perovskite quanta point material layer (7) is arranged is 2-10nm, with a thickness of 2-20nm.