CN110361643A - Ultraviolet-visible photosensitive composite dielectric gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) detector test macro and method - Google Patents

Abstract

The invention relates to the technical field of wafer-in-wafer testing, in particular to an ultraviolet-visible light-sensitive composite dielectric gate MOSFET detector testing system, including a wafer testing probe station, a testing and measuring instrument, a light source generation and adjustment system, system automatic control and data Processing software, the wafer test probe station is used to fix and test the DUT, the test measuring instrument is connected to the DUT, used for data detection and collection of the DUT, and the light source generation and adjustment system is used to emit the test light source To the wafer to be tested, it is used to control the output of the test light source for the test piece. The system automatic control and data processing software are respectively connected to the wafer test probe station and the light source generation and adjustment system. The test efficiency and packaging yield of the visible light photosensitive composite dielectric gate MOSFET detector improve the production efficiency and reduce the production cost.

Description

UV-Vis Photosensitive Composite Dielectric Gate MOSFET Detector Test System and Method

technical field

The invention relates to the technical field of wafer-in-chip testing, in particular to an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector testing system.

Background technique

The basic structure of each unit of the photosensitive composite dielectric gate MOSFET detector is that there are N-type semiconductor regions on both sides above the substrate P-type semiconductor material to form a source electrode and a drain electrode, and two layers of insulating dielectric materials and The control gate has an optoelectronic storage layer between the two layers of insulating dielectric materials; the second insulating medium in contact with the control gate is a material that prevents the charge stored in the optoelectronic storage layer from being lost to the gate, and the source and drain are collecting optoelectronics. The first insulating medium is the bottom medium, which is silicon oxide, Si0N or other high dielectric constant medium; the material of the second insulating medium layer is the top medium, which is silicon oxide/nitrogen Silicon oxide/silicon oxide, silicon oxide, aluminum oxide or other high dielectric constant dielectric materials; and at least one of the base layer or the gate surface is a transparent or translucent window for the detection wavelength of the detector.

For the testing of UV-Vis photosensitive composite dielectric gate MOSFET, in the prior art, it is usually firstly packaged and then connected to the testing system for testing;

Since the wafer production yield cannot reach 100%, if all chips are packaged first and then tested, bad samples will also be packaged, which will lead to an increase in workload and production costs, which will also seriously affect production. efficiency. In order to identify the performance and grade of the device before packaging, improve the test efficiency, and improve the yield rate, for the test of the UV-Vis photosensitive composite dielectric gate MOSFET, a system is required to realize the wafer-in-wafer test. Compared with the packaging-level system, the difficulty in the construction of the wafer-level in-wafer test system is that it not only needs to complete the light source generation, modulation and conduction devices, but also needs to design a complete method to achieve automatic coupling, automatic testing, Automatic data upload processing, automatic classification of product grades, etc.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector testing system, so as to solve the problems of low testing efficiency, high workload and high production cost of detector chips in the prior art.

In order to achieve the above purpose, the present invention provides the following technical solutions: an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system, including a wafer test probe station, a test and measurement instrument, a light source generation and adjustment system, system automatic control and data processing Software, the wafer test probe station is used for fixing and testing the DUT, the test and measurement instrument is connected to the DUT, and is used for data detection and collection of the DUT, the light source generation and adjustment system It is used to send out the test light source to the wafer DUT, and it is used to control the output of the test light source for the DUT. The automatic control and data processing software of the system is respectively connected with the wafer test probe station and the light source generation and adjustment system. Through the system automatic control and data processing software, the corresponding parameters are set, and the circular test probe station and the light source generation and the specific control of the adjustment system are carried out.

Preferably, the wafer test probe station is provided with a test platform for electrical probes and optical probes, the DUT is fixed on the test platform, and the DUT is excited by electrical or optical signals through the electrical probe and the optical probe, And collect the corresponding electrical or optical feedback signal information.

Preferably, the light source generation and adjustment system includes a xenon lamp light source, a condensing system, a chopper, a monochromator, an optical fiber, a calibration diode, and a light shielding system. The frequency of the gathered light source is adjusted, and the monochromator cooperates with the chopper to filter the light source of a specific wavelength and output the adjusted light source. The output light source is transmitted to the light shielding system through the optical fiber, and the light shielding system and the wafer test The probe station is mechanically fixed, and the output light source is first irradiated to the calibration diode for system calibration, and then the output light source is irradiated to the DUT for testing.

In order to achieve the above object, the present invention also provides the following technical solutions: a UV-Vis photosensitive composite dielectric gate MOSFET detector test system and a method of use, the steps of which are:

(1) When testing the operation of the whole system, the light source is first generated and the xenon light source in the adjustment system generates multi-band light;

(2) The emitted light is condensed into tiny light spots through the concentrating system, and is transmitted to the chopper through the optical path system;

(3) then conduct to the monochromator, and send commands to the monochromator through the system automatic control and data processing software, so that it can output light of a specific wavelength into the optical fiber through internal adjustment;

(4) The light is first introduced into the calibration diode placed in the light shielding system through the optical fiber, and then the data of the calibration diode is obtained as the reference data under the control of the system automatic control and data processing software for the calibration of the system;

(5) Light is introduced into the UV-Vis photosensitive composite dielectric gate MOSFET to be tested, which is placed in the light shielding system and fixed on the wafer and the device to be tested, through the optical fiber;

(6) Then, under the control of the system automatic control and data processing software, the optical fiber probe spatial movement control and coupling device controls the optical fiber to perform automatic optical coupling at the photosensitive surface of the device to be tested, and the coupling value is read by the testing and measuring instrument. Automatic control and data processing software determines whether the coupling result is optimal;

(7) After the coupling is completed, the system automatic control and data processing software will control the monochromator to generate monochromatic light in a certain wavelength range in turn as required, and then read the photocurrent responses under different light wavelengths in turn by controlling the testing and measuring instrument. value;

(8) Then the system automatic control and data processing software will integrate the wavelength and photocurrent response values to form the wavelength and photoresponse spectrum of the current device under test;

(9) After the current test of the device to be tested is completed, the system automatic control and data processing software controls the wafer test probe station to move to the next device to be tested, and the above process is repeated until all devices on the wafer are tested;

(10) Finally, the automatic control and data processing software of the system will sort out all the data of the current wafer, form the corresponding parameter vector diagram, and judge the yield rate. .

Compared with the prior art, the beneficial effects of the present invention are: the UV-Vis photosensitive composite dielectric gate MOSFET detector wafer-on-wafer automatic test and measurement system of the present invention includes a wafer-on-wafer light source generation or adjustment system, an automatic coupling system, an automatic The control system can realize the UV-Vis photosensitive composite dielectric gate MOSFET detector wafer in-wafer automatic test and measurement system, which greatly improves the UV-Vis photosensitive composite dielectric gate MOSFET detector test efficiency and packaging yield, improves production efficiency and reduces the cost of Cost of production.

Description of drawings

Fig. 1 is the system principle block diagram of the present invention;

Fig. 2 is the connection schematic diagram of the light source equipment of the present invention;

FIG. 3 is a schematic diagram of the construction of the light source system of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Referring to FIG. 1, the present invention provides a technical solution: an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system, including a wafer test probe station, a test and measurement instrument, a light source generation and adjustment system, system automatic control and data Processing software, the wafer test probe station is used for fixing and testing the DUT, the test measuring instrument is connected to the DUT, and is used for data detection and collection of the DUT, the light source is generated and adjusted The system is used to send a test light source to the wafer DUT, and is used to control the output of the test light source for the DUT. The automatic control and data processing software of the system is respectively connected with the wafer test probe station and the light source generation and adjustment system. , through the system automatic control and data processing software to set the corresponding parameters, as well as the specific control of the circular test probe station and light source generation and adjustment system, and the system automatic control and data processing software is integrated with the test system, system automatic control and data processing The software is connected with the test and measurement instrument, and can collect and integrate the data detected by the test and measurement instrument. The test and measurement instrument is a wafer electrical test instrument.

The wafer test probe station is provided with a test platform for electrical probes and optical probes, the DUT is fixed on the test platform, and the DUT is tested through the electrical probe and the optical probe. The wafer test probe station includes Wafer test probe station moving device, wafer and DUT fixing device, electrical probe device, electrical probe space movement control device, probe station anti-vibration system, vacuum pump or vacuum pipeline device, air compressor or compressed air Pipe device, fiber probe spatial movement control and coupling device.

As shown in Figure 2-3, the light source generation and adjustment system includes a xenon light source, a concentrating system, a chopper, a monochromator, an optical fiber, a calibration diode, and a light shielding system. Concentration, the chopper adjusts the frequency of the gathered light source. The monochromator cooperates with the chopper to filter the light source of a specific wavelength and output the adjusted light source. The output light source is transmitted to the light shielding system through the optical fiber. The system and the wafer test probe station are mechanically fixed, and the output light source is first irradiated to the calibration diode for system calibration, and then the output light source is irradiated to the DUT for testing. .

Xenon lamp light source, its spectral range is 185nm-2500nm; concentrating system, its minimum converging spot diameter is less than or equal to 5 microns, and its optical axis adjustable range is 20 mm; chopper, its frequency adjustment range is from 10 Hz to 24 kHz Optionally, its configured chopper plate is photochemically and demagnetized; a monochromator with a focal length of 260 mm, an aperture size of 3.9, a wavelength range of 200 nm to 2500 nm, a wavelength accuracy of 0.35 nm, and a wavelength resolution of 0.1 nanometer, the slit width is adjustable from 0.2 mm to 3 mm; the optical fiber is a multi-mode ultraviolet silica fiber with a numerical aperture of 0.22±0.02, and the light wave transmission range is from 190 nm to 1900 nm; the calibration diode, its spectral response range is from 190 nm to 1900 nm 1100 nm, the typical value of illuminance sensitivity is 0.5 ampere/watt, the peak wavelength of responsivity is 960 nm, and the minimum dark current is 50 pA; the typical value of electromagnetic shielding of light shielding system is greater than or equal to 20dB in the range of 0.5GHz to 20GHz. For light with a wavelength of 200 nanometers to 1100 nanometers, its light shielding ability is greater than or equal to 120dB.

An ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system and a method for using the same, the steps of which are:

(1) When testing the operation of the whole system, the light source is first generated and the xenon light source in the adjustment system generates multi-band light;

(2) The emitted light is condensed into tiny light spots through the concentrating system, and is transmitted to the chopper through the optical path system;

(3) then conduct to the monochromator, and send commands to the monochromator through the system automatic control and data processing software, so that it can output light of a specific wavelength into the optical fiber through internal adjustment;

(4) The light is first introduced into the calibration diode placed in the light shielding system through the optical fiber, and then the data of the calibration diode is obtained as the reference data under the control of the system automatic control and data processing software for the calibration of the system;

(5) Light is introduced into the UV-Vis photosensitive composite dielectric gate MOSFET to be tested, which is placed in the light shielding system and fixed on the wafer and the device to be tested, through the optical fiber;

(6) Then, under the control of the system automatic control and data processing software, the optical fiber probe spatial movement control and coupling device controls the optical fiber to perform automatic optical coupling at the photosensitive surface of the device to be tested, and the coupling value is read by the testing and measuring instrument. Automatic control and data processing software determines whether the coupling result is optimal;

(7) After the coupling is completed, the system automatic control and data processing software will control the monochromator to generate monochromatic light in a certain wavelength range in turn as required, and then read the photocurrent responses under different light wavelengths in turn by controlling the testing and measuring instrument. value;

(8) Then the system automatic control and data processing software will integrate the wavelength and photocurrent response values to form the wavelength and photoresponse spectrum of the current device under test;

(9) After the current test of the device to be tested is completed, the system automatic control and data processing software controls the wafer test probe station to move to the next device to be tested, and the above process is repeated until all devices on the wafer are tested;

(10) Finally, the automatic control and data processing software of the system will sort out all the data of the current wafer, form the corresponding parameter vector diagram, and judge the yield rate.

Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, and substitutions can be made in these embodiments without departing from the principle and spirit of the invention and modifications, the scope of the present invention is defined by the appended claims and their equivalents.

Claims (4)

1. an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system, is characterized in that: comprise wafer test probe station, test and measurement instrument, light source generation and adjustment system, system automatic control and data processing software, described wafer The test probe station is used for fixing and testing the DUT, the test and measuring instrument is connected to the DUT for data detection and collection of the DUT, and the light source generation and adjustment system is used to emit the test light source to The wafer DUT is used to control the output of the test light source for the DUT. The automatic control and data processing software of the system communicates with the wafer test probe station and the light source generation and adjustment system respectively, and the system automatically controls and data The processing software performs the setting of corresponding parameters, as well as the specific control of the circular test probe station and the light source generation and adjustment system. 2. The ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system according to claim 1, wherein the wafer test probe station is provided with a test platform for electrical probes and optical probes, and the test piece is fixed on the On the test platform, the DUT is excited by electrical or optical signals through electrical probes and optical probes, and corresponding electrical or optical feedback signal information is collected. 3. The ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system according to claim 1, wherein the light source generation and adjustment system comprises a xenon lamp light source, a concentrating system, a chopper, a monochromator, an optical fiber, Calibrate the diode and light shielding system. The light source generated by the xenon light source is collected by the light collecting system. The frequency of the collected light source is adjusted by the chopper. The monochromator cooperates with the chopper to filter the light source of a specific wavelength for the adjusted light source. The output light source is transmitted to the light shielding system through the optical fiber. The light shielding system and the wafer test probe station are mechanically fixed. The output light source is first irradiated to the calibration diode for system calibration, and then the output light source is irradiated to the Test on the DUT. 4. an ultraviolet-visible photosensitive composite dielectric gate MOSFET detector test system and a method of use, characterized in that: its steps are: (1) When testing the operation of the whole system, the light source is first generated and the xenon light source in the adjustment system generates multi-band light; (2) The emitted light is condensed into tiny light spots through the concentrating system, and is transmitted to the chopper through the optical path system; (3) then conduct to the monochromator, and send commands to the monochromator through the system automatic control and data processing software, so that it can output light of a specific wavelength into the optical fiber through internal adjustment; (4) The light is first introduced into the calibration diode placed in the light shielding system through the optical fiber, and then the data of the calibration diode is obtained as the reference data under the control of the system automatic control and data processing software for the calibration of the system; (5) Light is introduced into the UV-Vis photosensitive composite dielectric gate MOSFET to be tested, which is placed in the light shielding system and fixed on the wafer and the device to be tested, through the optical fiber; (6) Then, under the control of the system automatic control and data processing software, the optical fiber probe spatial movement control and coupling device controls the optical fiber to perform automatic optical coupling at the photosensitive surface of the device to be tested, and the coupling value is read by the testing and measuring instrument. Automatic control and data processing software determines whether the coupling result is optimal; (7) After the coupling is completed, the system automatic control and data processing software will control the monochromator to generate monochromatic light in a certain wavelength range in turn as required, and then read the photocurrent responses under different light wavelengths in turn by controlling the testing and measuring instrument. value; (8) Then the system automatic control and data processing software will integrate the wavelength and photocurrent response values to form the wavelength and photoresponse spectrum of the current device under test; (9) After the current test of the device to be tested is completed, the system automatic control and data processing software controls the wafer test probe station to move to the next device to be tested, and the above process is repeated until all devices on the wafer are tested; (10) Finally, the automatic control and data processing software of the system will sort out all the data of the current wafer, form the corresponding parameter vector diagram, and judge the yield rate.