CN110350882B - L-band miniature chip type high-power limiter - Google Patents
L-band miniature chip type high-power limiter Download PDFInfo
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- CN110350882B CN110350882B CN201910748467.7A CN201910748467A CN110350882B CN 110350882 B CN110350882 B CN 110350882B CN 201910748467 A CN201910748467 A CN 201910748467A CN 110350882 B CN110350882 B CN 110350882B
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- 230000000670 limiting effect Effects 0.000 claims abstract description 100
- 238000001514 detection method Methods 0.000 claims abstract description 33
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- 238000002955 isolation Methods 0.000 claims abstract description 29
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- 230000004044 response Effects 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 3
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- 230000001133 acceleration Effects 0.000 abstract description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G11/00—Limiting amplitude; Limiting rate of change of amplitude
- H03G11/02—Limiting amplitude; Limiting rate of change of amplitude by means of diodes
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Abstract
The invention provides an L-band miniature chip type high-power limiter, which comprises a high-thermal-conductivity high-frequency microwave printed circuit board, wherein the high-thermal-conductivity high-frequency microwave printed circuit board is provided with: the high-isolation amplitude limiting circuit comprises a coupling circuit for performing power coupling on an input signal, a detection circuit for performing power detection on the coupled signal, a direct-current bias circuit for performing acceleration response on an amplitude limiting circuit, a high-power amplitude limiting circuit for performing amplitude limitation on an input high-power signal, an impedance matching circuit A and an impedance matching circuit B for performing standing wave improvement on each element of the amplitude limiter, and a high-isolation amplitude limiting circuit for performing deep amplitude limiting on an output signal; the printed circuit board adopts a ceramic printed circuit board, the characteristics of the ceramic printed circuit board and the dual-purpose mode of one board realize the purposes of high heat dissipation and miniature chip size of the limiter, the combination connection between circuits solves the defects of low power and low response speed, and the combination of the ceramic printed circuit board and the miniature board realizes the ultra-high power limiter on the miniature board.
Description
Technical Field
The invention belongs to the technical field of microwave control circuits, and particularly relates to an L-band micro chip type high-power limiter.
Background
The high-power limiter is a microwave control device commonly used in a wireless receiving and transmitting system, particularly a high-power radar system, is generally used at the front end of a receiving system, and is used for preventing a transmitter from leaking power, and a large signal such as adjacent radar irradiation, close-range target scattering and the like from entering a receiver to burn sensitive devices such as low noise amplifier and the like.
With the rapid development of electronic warfare systems in recent years, radar transmit power is rapidly increasing, which puts severe demands on the power-resistant performance of limiters. Meanwhile, miniaturization, tile type and modularization development of the radio frequency front end of the phased array radar have become necessary trends, and the traditional high-power limiter is supposed to be eliminated due to the large-size defect of the traditional high-power limiter. Therefore, development of miniaturized high-power limiters has been urgent.
Disclosure of Invention
The invention aims to provide an L-band miniature chip type high-power limiter, which aims to solve the defects of large size, small passing power and low response speed of a conventional limiter and realize the ultra-high-power limiter on a miniature substrate.
The technical aim of the invention is realized by the following technical scheme: the L-band miniature chip type high-power limiter comprises a high-thermal-conductivity high-frequency microwave printed circuit board, wherein the high-thermal-conductivity high-frequency microwave printed circuit board is provided with: the high-isolation amplitude limiting circuit comprises a coupling circuit for performing power coupling on an input signal, a detection circuit for performing power detection on the coupled signal, a direct current bias circuit for performing acceleration response on an amplitude limiting circuit, a high-power amplitude limiting circuit for performing amplitude limitation on an input high-power signal, an impedance matching circuit for performing standing wave improvement on each element of the amplitude limiter, and a high-isolation amplitude limiting circuit for performing deep amplitude limiting on an output signal;
the input end of the coupling circuit is a signal input end, the output end of the coupling circuit is electrically connected with one input end of the high-power amplitude limiting circuit, the coupling end of the coupling circuit is electrically connected with the input end of the detection circuit, the output end of the detection circuit is electrically connected with the input end of the direct-current biasing circuit, the output end of the direct-current biasing circuit is electrically connected with the other input end of the high-power amplitude limiting circuit, the impedance matching circuit comprises an impedance matching circuit A and an impedance matching circuit B, the output end of the high-power amplitude limiting circuit is electrically connected with the input end of the impedance matching circuit A, the output end of the impedance matching circuit A is electrically connected with the input end of the high-isolation amplitude limiting circuit, and the output end of the impedance matching circuit B is a signal output end.
By adopting the technical scheme, after a high-power radio frequency signal enters a signal input end, the high-power radio frequency signal is coupled to a detection circuit through a coupling circuit, the detection circuit converts the radio frequency signal into direct-current voltage and transmits the direct-current voltage to a direct-current bias circuit, and the direct-current bias circuit transmits current to limiting diodes D1-D3 in the high-power limiting circuit so as to rapidly conduct the limiting diodes D1-D3 and accelerate the starting of the limiting function of the limiting diodes D1-D3; meanwhile, the coupled radio frequency signals are further transmitted to a high-power amplitude limiting circuit, and the output level of the input radio frequency signals is reduced to about 30-35 dBm from the maximum 56dBm power level after the input radio frequency signals pass through the high-power amplitude limiting circuit under the influence of the amplitude limiting effect of the high-power amplitude limiting circuit; further, the signal is transmitted to a rear-stage high-isolation amplitude limiting circuit, the high-isolation amplitude limiting circuit can further limit the amplitude of the signal with the amplitude of 30-35 dBm, and the output level after the amplitude limiting of the high-isolation amplitude limiting circuit is generally 8-12 dBm; the signal output of this power level range generally does not affect the devices in the receiving system. By combining the high-power amplitude limiting circuit and the high-isolation amplitude limiting circuit, the continuous wave signal with the power of hundreds of watts (the typical power is 56dBm at maximum) is limited to be output with the power of 10 milliwatts (the typical power is 10 dBm), so that the function of protecting a receiving system from being burnt by the amplitude limiter when the high-power transmitting signal exists is realized.
Preferably, the coupling circuit comprises a capacitor C1, a four-port directional coupler and a resistor R2, wherein one end of the capacitor C1 is connected with the signal input end in series, the other end of the capacitor C1 is connected with the input end of the directional coupler in series, the isolation end of the directional coupler is connected with one end of the resistor R2 in series, and the other end of the resistor R2 is grounded.
By adopting the technical scheme, the coupling circuit adopts the principle of a 1/4 wavelength air line microstrip coupler, and adopts a mode that a planar circuit and a high-thermal-conductivity high-frequency microwave printed circuit substrate are integrally designed to directly draw the coupler circuit on the high-thermal-conductivity high-frequency microwave printed circuit substrate, so that no additional device is required to be added; similarly, the resistor R2 adopts a thin film circuit technology, the resistor R2 is realized in the high-heat-conductivity high-frequency microwave printed circuit board, and an additional chip resistor is not required to be placed, so that the input high-power signal is subjected to power coupling and is transmitted to the detection circuit.
Preferably, the detection circuit comprises a schottky diode D6, a schottky diode D7 and a resistor R1, the schottky diode D6 and the schottky diode D7 are connected in parallel in the same direction, the anode ends of the schottky diode D6 and the schottky diode D7 which are connected in parallel are connected in series with the coupling end of the directional coupler, the cathode ends of the schottky diode D6 and the schottky diode D7 which are connected in parallel are connected with one end of the resistor R1, and the other end of the resistor R1 is grounded.
By adopting the technical scheme, the detection circuit uses the Schottky diode detection principle to convert the coupling power signal into voltage and transmit the voltage to the direct current bias circuit for feeding.
Preferably, the high-power amplitude limiting circuit comprises amplitude limiting diodes D1, D2 and D3, wherein the amplitude limiting diodes D1, D2 and D3 are connected in parallel in the same direction, the anodes of the amplitude limiting diodes D1, D2 and D3 are commonly connected to the output end of the directional coupler, and the cathodes of the amplitude limiting diodes D1, D2 and D3 are grounded.
By adopting the technical scheme, the high-power amplitude limiting circuit uses the PIN diode conductivity modulation principle, the amplitude limiting diodes D1, D2 and D3 are all high-voltage-resistant PIN diodes, and are connected in a parallel circuit mode to improve the power resistance value of the amplitude limiting circuit, and the input high-power signal is subjected to preliminary amplitude limiting, so that the amplitude of the signal output after amplitude limiting is less than or equal to 35dBm.
Preferably, the dc bias circuit includes a capacitor C4 and an inductor L1, where the capacitor C4 is connected in parallel with the resistor R1, and the inductor L1 is connected in series between the microstrip line where the clipping diodes D1-D3 are located and the capacitor C4.
By adopting the technical scheme, the direct current bias circuit uses the choke coil principle to transmit the voltage and current generated by the detection circuit to the three limiting diodes of the high-power limiting circuit so as to accelerate the response of the limiting diodes, and meanwhile, the performance of the radio frequency circuit is not affected.
Preferably, the high-isolation clipping circuit includes a capacitor C2, a capacitor C3, a clipping diode D4 and a clipping diode D5, where one end of the capacitor C2 is connected in series with the impedance matching circuit a, the other end of the capacitor C2 is connected in series with one end of the capacitor C3, the other end of the capacitor C3 is connected in series with the impedance matching circuit B, the negative electrode of the clipping diode D4 is connected in parallel with the positive electrode of the clipping diode D5, and the parallel end is connected between the capacitor C2 and the capacitor C3, and the positive electrode of the clipping diode D4 is grounded with the negative electrode of the clipping diode D5.
By adopting the technical scheme, the high-isolation amplitude limiting circuit uses the PIN diode conductivity modulation principle, the amplitude limiting diodes D4 and D5 adopt thin I-layer PIN diodes, and then the two diodes reduce the leakage level in a parallel circuit mode, so that the amplitude of the signal output after deep amplitude limiting is less than or equal to 12dBm.
Preferably, the impedance matching circuit a includes an inductance L2, where the inductance L2 is connected in series between the microstrip line where the limiting diodes D1-D3 are located and the capacitor C2; the impedance matching circuit B comprises a capacitor C5, one end of the capacitor C5 is connected with a capacitor C3, and the other end of the capacitor C5 is grounded.
By adopting the technical scheme, the impedance matching circuits A and B jointly play a role in standing wave improvement on all elements of the limiter, the microstrip step impedance conversion principle is utilized, and the impedance matching is carried out on the limiter circuit by adopting the inductor and the capacitor, so that impedance mismatch caused by the capacitance value of the diode and the capacitance value of the bonding pad is reduced, the circuit insertion loss and standing wave are improved, and the power capacity of the limiter is further improved.
Preferably, the high-thermal-conductivity high-frequency microwave printed circuit board is a ceramic high-thermal-conductivity high-frequency microwave printed circuit board.
By adopting the technical scheme, the ceramic high-heat-conductivity high-frequency microwave printed circuit board is used as a carrier of a printed circuit board circuit and a carrier for radiating by the limiter chip, so that the extra radiating measure like a conventional limiting module is not needed; 2. the ceramic substrate has the advantages of high dielectric constant, ultralow dielectric loss, excellent material hardness, corrosion resistance, stripping resistance and the like.
Preferably, the high-thermal conductivity high-frequency microwave printed circuit board has an overall size of 6mm×3.2mm×2mm.
By adopting the technical scheme, the area is only 1/10-1/20 of that of the conventional limiter under the same power level, and the volume is 1/20-1/50 of that of the conventional limiter. Under the same heat dissipation condition, the power capacity of the module is improved by 3-5 times compared with that of a conventional module.
Compared with the prior art, the invention has the beneficial effects that:
1. the coupling circuit and the detection circuit are adopted to detect the high-power radio frequency signals, and the detection voltage generated by the detection is transmitted to the high-power amplitude limiting circuit, so that the response speed of a diode in the high-power amplitude limiting circuit is increased, compared with a conventional amplitude limiter, the starting speed is obviously increased, the 'blind area' time of the amplitude limiter is greatly shortened, and the risk that a receiving system is burnt in the 'blind area' time is greatly reduced;
2. the impedance matching circuit is adopted, so that standing waves and losses of the limiter circuit are improved, the integral standing waves of the circuit after the limiter is matched are smaller than 1.2, heat consumption caused by power loss caused by the insertion loss of the limiter is reduced, and the upper limit of the power resistance value of the limiter is further improved;
3. the circuit design is carried out by adopting a mode of combining a high-power amplitude limiting circuit and a high-isolation amplitude limiting circuit: on one hand, the high-power amplitude limiting circuit improves the maximum power resistance value of the amplitude limiter; on the other hand, the high-isolation amplitude limiting circuit reduces the leakage power value of the output of the amplitude limiter, and the leakage power value and the leakage level capability of the whole amplitude limiter are improved simultaneously;
4. the aluminum nitride ceramic substrate is used as the limiter substrate, is not only a carrier of a printed circuit, but also an integral base of the limiter, has the dual-purpose function of one plate, and simultaneously has the advantages of high dielectric constant, ultralow dielectric loss, excellent material hardness, corrosion resistance, stripping resistance and the like, compared with the conventional microwave high-thermal conductivity high-frequency microwave printed circuit substrate, the dielectric constant is improved by 3 times, the loss angle is positively cut down by 50 percent, the thermal conductivity is improved by 100 times, the heat dissipation performance is greatly improved, no additional radiator device is required to be introduced, and the integral size is greatly reduced; the heat consumption caused by the insertion loss of the ceramic substrate is further reduced, and the integrated heat dissipation performance of the same volume is improved by more than 20 times compared with that of a conventional microwave high-heat-conductivity high-frequency microwave printed circuit substrate;
5. the whole size of the limiter is greatly reduced due to the material selection of the high-heat-conductivity high-frequency microwave printed circuit substrate and the design that the local circuit is directly drawn on the substrate, the area is only 1/20-1/10 of that of the conventional limiter, and the volume is 1/20-1/100 of that of the conventional limiter, so that the limiter has the advantage of miniaturization.
Drawings
FIG. 1 is a structural flow diagram of an embodiment;
fig. 2 is a schematic circuit diagram of an embodiment.
Reference numerals: 201. a high-power amplitude limiting circuit; 202. a coupling circuit; 203. a detection circuit; 204. a DC bias circuit; 205. a high isolation clipping circuit; 206. an impedance matching circuit.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, an L-band micro chip type high-power limiter includes a high-thermal conductivity high-frequency microwave printed circuit board, on which: the high-power limiter comprises a coupling circuit 202 for coupling power to an input signal, a detection circuit 203 for detecting power of the coupled signal, a DC bias circuit 204 for accelerating response of a limiter circuit, a high-power limiter circuit 201 for limiting amplitude of the input high-power signal, an impedance matching circuit 206 for improving standing waves of elements of the limiter, and a high-isolation limiter circuit 205 for deeply limiting an output signal.
The input end of the coupling circuit 202 is a signal input end, the output end is electrically connected to one of the input ends of the high-power amplitude limiting circuit 201, the coupling end is electrically connected to the input end of the detection circuit 203, the output end of the detection circuit 203 is electrically connected to the input end of the direct-current biasing circuit 204, the output end of the direct-current biasing circuit 204 is electrically connected to the other input end of the high-power amplitude limiting circuit 201, the impedance matching circuit 206 comprises an impedance matching circuit A and an impedance matching circuit B, the output end of the high-power amplitude limiting circuit 201 is electrically connected to the input end of the impedance matching circuit A, the output end of the impedance matching circuit A is electrically connected to the input end of the high-isolation amplitude limiting circuit 205, the output end of the high-isolation amplitude limiting circuit 205 is electrically connected to the input end of the impedance matching circuit B, and the output end of the impedance matching circuit B is a signal output end.
Particularly important, the high-heat-conductivity high-frequency microwave printed circuit board is a ceramic high-heat-conductivity high-frequency microwave printed circuit board, has the advantage of dual purposes of one board, and can be used as a carrier of a printed circuit and also as a base of the whole limiter; because of the characteristics of the board, compared with a conventional microwave circuit substrate, the dielectric constant is improved by 3 times, the loss angle is reduced by 50 percent in forward cutting, the heat conductivity is improved by more than 100 times, the heat conductivity of copper is basically achieved, the heat dissipation performance is excellent, an additional radiator device is not required to be introduced, and the overall size is further reduced; the heat consumption caused by the insertion loss of the ceramic printed circuit substrate is further reduced, and the integrated heat dissipation performance of the same volume is improved by more than 20 times compared with that of a conventional module.
Specifically, as shown in fig. 2, the coupling circuit 202 includes a capacitor C1, a four-port directional coupler and a resistor R2, one end of the capacitor C1 is connected in series with the signal input end, the other end of the capacitor C1 is connected in series with the input end of the directional coupler, the isolation end of the directional coupler is connected in series with one end of the resistor R2, and the other end of the resistor R2 is grounded. The coupling circuit 202 directly draws the coupler circuit on the circuit substrate by using a principle of a 1/4 wavelength air line microstrip coupler and adopting a MOM microwave simulation tool in Advanced Design System electromagnetic simulation software, so that no additional device is required to be added, and the volume of the limiter is reduced to a certain extent; similarly, the resistor R2 is realized in a ceramic substrate by adopting a thin film circuit technology, and an additional chip resistor is not required to be placed, so that the size reduction of the limiter is greatly facilitated.
As shown in fig. 2, the detection circuit 203 includes a schottky diode D6, a schottky diode D7 and a resistor R1, where the schottky diode D6 and the schottky diode D7 are connected in parallel in the same direction, and the anode ends of the two parallel connection are connected in series to the coupling end of the directional coupler, the cathode ends of the two parallel connection are connected with one end of the resistor R1, and the other end of the resistor R1 is grounded. The detection circuit 203 converts the coupled power signal into a direct current voltage by using the schottky diode detection principle, and the schottky diodes D6 and D7 respond extremely fast (< 10nS level), so the detection circuit 203 can realize instantaneous detection of the input signal power.
As shown in fig. 2, the dc bias circuit 204 includes a capacitor C4 and an inductor L1, the capacitor C4 is connected in parallel with a resistor R1, and the inductor L1 is connected in series between the microstrip line where the clipping diodes D1-D3 are located and the capacitor C4.
The high-power amplitude limiting circuit 201 comprises amplitude limiting diodes D1, D2 and D3, the amplitude limiting diodes D1, D2 and D3 are connected in parallel in the same direction, the anodes of the amplitude limiting diodes D1, D2 and D3 are commonly connected to the output end of the directional coupler, and the cathodes of the amplitude limiting diodes D1, D2 and D3 are grounded.
The DC bias circuit 204 transmits the voltage generated by the detection to the anodes of the limiting diodes D1-D3 by using a choke coil principle; when a high-power signal is input, the coupling circuit 202 transmits the signal to the detection circuit 203 in real time, and the response of the Schottky diodes D6-D7 is extremely fast (less than 10nS level), and the response of the limiting diodes D1-D3 is slower (more than 10 mu S level), so that the detection voltage is biased at the anodes of the limiting diodes D1-D3 through the choke inductor L1, the response of the limiting diodes D1-D3 is extremely fast, the quick response of the high-power limiting tube is realized, and the power resistance level of the limiter in the signal input is greatly improved.
The high-isolation clipping circuit 205 includes a capacitor C2, a capacitor C3, a clipping diode D4 and a clipping diode D5, where one end of the capacitor C2 is connected in series with the impedance matching circuit 206A, the other end of the capacitor C2 is connected in series with one end of the capacitor C3, the other end of the capacitor C3 is connected in series with the impedance matching circuit 206B, the negative electrode of the clipping diode D4 and the positive electrode of the clipping diode D5 are connected in parallel on the microstrip line, and the parallel end is connected between the capacitor C2 and the capacitor C3, and the positive electrode of the clipping diode D4 and the negative electrode of the clipping diode D5 are grounded. When a high-power signal is input, the amplitude of the signal with hundreds of watts can be reduced to be within 5 watts (the amplitude limiting isolation is about 15dB to 20 dB) through the amplitude limiting diodes D1 to D3 of the primary high-power, and the signal is subjected to multi-stage amplitude limiting through the high-isolation amplitude limiting diodes D4 and D5, so that the amplitude of the signal output after amplitude limiting is less than or equal to +10dBm (the amplitude limiting isolation is more than or equal to 25 dB), and the signal intensity of the power level is generally smaller than the maximum allowable input radio frequency power of devices such as low noise amplifier, switch, mixer and the like in a receiver circuit, thereby protecting a later-stage circuit from being burnt.
The impedance matching circuit A comprises an inductor L2, and the inductor L2 is connected in series between a microstrip line where the limiting diodes D1-D3 are positioned and a capacitor C2; the impedance matching circuit B comprises a capacitor C5, one end of the capacitor C5 is connected with the capacitor C3, and the other end of the capacitor C5 is grounded. An inductance L2 and a capacitance C2 are connected in series between the high power limiter circuit 201 and the high isolation limiter circuit 205 for impedance matching the limiter circuit. The microwave printed board used by the circuit has higher dielectric constant, the linewidth of the 50 omega microstrip is narrower, and the minimum sizes of the limiting diode, the single-layer capacitor and the like used are all above 0.3mm, so that the size of the assembled bonding pad is wider than the size of the 50 omega impedance line, which leads to unmatched circuit impedance, and therefore, an inductive element is needed to carry out impedance tuning on the circuit. After tuning, the insertion loss and standing wave of the limiter are greatly improved, and the power capacity of the limiter is improved.
Furthermore, the components used by the limiter are bare chip packages except the chip inductor, and the components are mounted on the ceramic printed circuit substrate by adopting a eutectic process, so that the limiter comprises the following components: the whole size of the limiter is 6mm multiplied by 3.2mm multiplied by 2mm, the area is only 1/10-1/20 of that of the conventional limiter, the volume is 1/20-1/50 of that of the conventional limiter, the size of the limiter is greatly reduced, and the power capacity is improved by 5-10 times under the same heat dissipation condition, and the limiter has high-power performance and small miniature volume; the second technology makes the limiter have the performance and extremely high reliability which are difficult to achieve by the conventional limiter, and has very good application prospect.
In addition, the 1/4 wavelength air line microstrip coupler principle, schottky diode detection principle, choke coil principle, microstrip step impedance transformation and PIN diode conductance modulation principle are conventional knowledge in the microwave field, and will not be described in detail here.
The above description is only a preferred embodiment of the present invention, and the protection scope is not limited to the example, and the technical solutions under the concept of the present invention should be within the protection scope of the present invention. It should also be noted that modifications and adaptations to those skilled in the art without departing from the principles of the present invention are intended to be comprehended within the scope of the present invention.
Claims (2)
1. The L-band miniature chip type high-power limiter comprises a high-heat-conductivity high-frequency microwave printed circuit board, and is characterized in that the high-heat-conductivity high-frequency microwave printed circuit board is provided with: a coupling circuit (202) for coupling power to an input signal, a detection circuit (203) for detecting power to the coupled signal, a DC bias circuit (204) for accelerating response to a limiter circuit, a high-power limiter circuit (201) for limiting amplitude of the input high-power signal, an impedance matching circuit (206) for improving standing waves of each element of the limiter, and a high-isolation limiter circuit (205) for deeply limiting an output signal;
the input end of the coupling circuit (202) is a signal input end, the output end of the coupling circuit is electrically connected with one input end of the high-power amplitude limiting circuit (201), the coupling end of the coupling circuit is electrically connected with the input end of the detection circuit (203), the output end of the detection circuit (203) is electrically connected with the input end of the direct-current bias circuit (204), the output end of the direct-current bias circuit (204) is electrically connected with the other input end of the high-power amplitude limiting circuit (201), the impedance matching circuit (206) comprises an impedance matching circuit A and an impedance matching circuit B, the output end of the high-power amplitude limiting circuit (201) is electrically connected with the input end of the impedance matching circuit A, the output end of the impedance matching circuit A is electrically connected with the input end of the high-isolation amplitude limiting circuit (205), and the output end of the high-isolation amplitude limiting circuit (205) is electrically connected with the input end of the impedance matching circuit B, and the output end of the impedance matching circuit B is a signal output end;
the coupling circuit (202) comprises a capacitor C1, a four-port directional coupler and a resistor R2, wherein one end of the capacitor C1 is connected with the signal input end in series, the other end of the capacitor C1 is connected with the input end of the directional coupler in series, the isolation end of the directional coupler is connected with one end of the resistor R2 in series, and the other end of the resistor R2 is grounded;
the detection circuit (203) comprises a Schottky diode D6, a Schottky diode D7 and a resistor R1, wherein the Schottky diode D6 and the Schottky diode D7 are connected in parallel in the same direction, the anode ends of the Schottky diode D6 and the Schottky diode D7 which are connected in parallel are connected in series with the coupling end of the directional coupler, the cathode ends of the Schottky diode D6 and the Schottky diode D7 which are connected in parallel are connected with one end of the resistor R1, and the other end of the resistor R1 is grounded;
the high-power amplitude limiting circuit (201) comprises amplitude limiting diodes D1, D2 and D3, wherein the amplitude limiting diodes D1, D2 and D3 are connected in parallel in the same direction, the anodes of the amplitude limiting diodes D1, D2 and D3 are commonly connected to the output end of the directional coupler, and the cathodes of the amplitude limiting diodes D1, D2 and D3 are grounded;
the direct current bias circuit (204) comprises a capacitor C4 and an inductor L1, wherein the capacitor C4 is connected with a resistor R1 in parallel, and the inductor L1 is connected between a microstrip line where limiting diodes D1-D3 are arranged and the capacitor C4 in series;
the high-isolation amplitude limiting circuit (205) comprises a capacitor C2, a capacitor C3, an amplitude limiting diode D4 and an amplitude limiting diode D5, wherein one end of the capacitor C2 is connected in series with an impedance matching circuit (206) A, the other end of the capacitor C2 is connected in series with one end of the capacitor C3, the other end of the capacitor C3 is connected in series with an impedance matching circuit (206) B, the negative electrode of the amplitude limiting diode D4 and the positive electrode of the amplitude limiting diode D5 are connected in parallel, the parallel end is connected between the capacitor C2 and the capacitor C3, and the positive electrode of the amplitude limiting diode D4 and the negative electrode of the amplitude limiting diode D5 are grounded;
the impedance matching circuit A comprises an inductor L2, and the inductor L2 is connected in series between a microstrip line where the limiting diodes D1-D3 are positioned and a capacitor C2; the impedance matching circuit B comprises a capacitor C5, one end of the capacitor C5 is connected with a capacitor C3, and the other end of the capacitor C5 is grounded;
the high-thermal-conductivity high-frequency microwave printed circuit substrate is a ceramic high-thermal-conductivity high-frequency microwave printed circuit substrate.
2. The L-band microchip type high power limiter of claim 1, wherein the high thermal conductivity high frequency microwave printed circuit board has an overall size of 6mm x 3.2mm x 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910748467.7A CN110350882B (en) | 2019-08-14 | 2019-08-14 | L-band miniature chip type high-power limiter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910748467.7A CN110350882B (en) | 2019-08-14 | 2019-08-14 | L-band miniature chip type high-power limiter |
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| Publication Number | Publication Date |
|---|---|
| CN110350882A CN110350882A (en) | 2019-10-18 |
| CN110350882B true CN110350882B (en) | 2024-02-02 |
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| CN201910748467.7A Active CN110350882B (en) | 2019-08-14 | 2019-08-14 | L-band miniature chip type high-power limiter |
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| CN114614784B (en) * | 2022-05-11 | 2022-08-02 | 深圳市鼎阳科技股份有限公司 | Ultra-wideband adjustable amplitude limiter |
| CN115065330B (en) * | 2022-06-08 | 2024-11-26 | 中国舰船研究设计中心 | Miniature high-power microwave limiter based on passive detection bias circuit and microassembly |
| CN114793098B (en) * | 2022-06-23 | 2022-09-20 | 成都世源频控技术股份有限公司 | Self-adaptive high-power amplitude limiting circuit with fast recovery |
| CN115598427B (en) * | 2022-12-14 | 2023-03-14 | 四川斯艾普电子科技有限公司 | Coupling detector based on thick film and thin film integration and implementation method thereof |
| CN116582141A (en) * | 2023-04-26 | 2023-08-11 | 广东圣大通信有限公司 | A Large Dynamic Limiter Circuit and Receiver |
| CN116707576B (en) * | 2023-05-29 | 2024-05-07 | 北京华通时空通信技术有限公司 | High-power switch filter group based on PIN diode |
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