CN110346052A - MEMS non-refrigerated infrared detector thermal parameters test circuit and test method - Google Patents
MEMS non-refrigerated infrared detector thermal parameters test circuit and test method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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Abstract
The present invention relates to the electricity self-test fields of the thermal parameters of infrared detector, and in particular to a kind of the thermal parameters test circuit and test method of MEMS non-refrigerated infrared detector.The MEMS non-refrigerated infrared detector thermal parameters test circuit includes: MEMS non-refrigeration infrared detector array, the infrared sensitive unit including multiple lines and multiple rows；Array gating switch for successively gating the sensing unit in MEMS non-refrigeration infrared detector array in turn, and exports the electrical signal that chosen sensing unit generates and gives amplification computing circuit；Amplify computing circuit, operation is amplified to the variation of electrical signal, and amplification operation result is exported to data processing module；Power module, the infrared sensitive unit power supply for being chosen to array gating switch；Device thermal capacitance C, thermal response time τ, thermal conductivity G, Blackbody response sensitivily R is calculated according to the actual test data of the amplification computing circuit in the data processing moduleIRWith infrared absorption efficiency eta.
Description
Technical field
The present invention relates to the electricity self-test fields of the thermal parameters of micro-nano device, and in particular to one kind is based on from thermal effect
The test circuit and method for the MEMS non-refrigerated infrared detector thermal parameters answered.
Background technique
MEMS (MEMS) is also referred to as the systems such as microelectromechanical systems or micromechanics, is in microelectric technique (half
Conductor manufacturing technology) on the basis of grow up.Common product includes accelerometer, microphone, gyroscope, humidity sensor
Device, gas sensor, infrared detector etc..Currently based on the hot MEMS sensor of thermal characteristics principle, be widely used in national defence,
The multiple fields such as medical treatment, safety, space flight, environmental monitoring, automotive electronics have micromation, intelligence, multi-functional, high integration
And the characteristics of mass production.
Infra-red radiation is a kind of electromagnetic wave energy that nature is generally existing, detects and acquire the infra-red radiation of object, can
With reconstruction of objects feature, in fields extensive application demands such as military affairs, industry, medical treatment, security protections.Non-refrigerated infrared detector
It is the fuel factor using infra-red radiation, infrared acquisition is realized by optical and thermal-electricity conversion, there is light weight, small in size, power consumption
The advantages that small, at low cost, become it is civilian and in, the military first choice of low side.
Non-refrigerated infrared detector includes infrared detector array and reading circuit two parts, and infrared detector array
It is the core of whole system.According to the sensing unit type of array, non-refrigerated infrared detector can be divided into diode
Type, resistor-type, thermocouple type, thermoelectric type or field-effect cast.The thermal parameters of infrared detector array depend on device
Material and structure information, determine the overall performance of detector.Its thermal parameters mainly includes thermal capacitance, thermal conductivity, thermal response
Time Blackbody response sensitivily and ir-absorbance, therefore these thermal parameters are accurately measured to the assessment of device thermal property and structure
Design optimization is of great significance.
Currently, the structure and process for thermal parameters design determine that relying primarily on emulation, estimation etc. designs roughly
Method, error is larger, and the design cycle is longer.And the domestic test for being directed to thermal parameters, it is both needed to by rare, expensive outer
Boundary's test equipment, test macro is complicated, and inconvenient, testing efficiency is low, especially for array type device, the time of test
It is at high cost.Therefore the self testing circuit of research MEMS non-refrigerated infrared detector thermal parameters has urgency and necessity.
Summary of the invention
The purpose of the present invention is being to overcome, supplementing the deficiencies in the prior art, it is red to provide a kind of MEMS non-brake method
External detector thermal parameters test circuit and test method, and the MEMS non-refrigerated infrared detector thermal parameters test circuit
And test method.
As the first aspect of the present invention, a kind of MEMS non-refrigerated infrared detector thermal parameters test circuit, institute are provided
Stating MEMS non-refrigerated infrared detector thermal parameters test circuit includes: blackbody radiation source, chopper, power module, MEMS non-
Freeze outer focal plane arrays (FPA), array gating switch, amplification computing circuit and data processing module；
The outer focal plane arrays (FPA) of the MEMS non-brake method, the infrared sensitive unit including multiple lines and multiple rows；Each sensing unit is logical
It can generate heat after electricity or after absorbing infra-red radiation, electrical signal corresponding with its temperature can be generated；
The array gating switch, for successively gating the sensing unit in MEMS non-refrigerated infrared detector in turn, and
It exports the electrical signal that chosen sensing unit generates and gives amplification computing circuit；
The amplification computing circuit is put for acquiring the variation of the electrical signal, and to the variation of electrical signal
Macrooperation is converted into digital signal and exports to data processing unit；
The power module, for powering to the selected sensing unit of array gating switch；
MEMS is calculated according to the actual test data of the amplification computing circuit output in the data processing unit
The thermal parameters of the sensing unit of non-refrigerated infrared detector.
Device thermal capacitance is calculated according to the actual test data of the amplification computing circuit in the data processing unit
C, thermal response time τ, thermal conductivity G, Blackbody response sensitivily RIRWith infrared absorption efficiency eta
Further, the power module includes voltage source and multiple pulse constant current units, MEMS Uncooled infrared detection
The corresponding pulse constant current unit of each column sensing unit of device；The pulse constant current unit is for giving each column sensing unit
Constant-current pulse signal is provided.
Each pulse constant current unit includes that one group of constant-current source and a constant-current source by shift register control select
Open up pass；
Further, the constant-current source gating switch is single-pole double-throw switch (SPDT), and constant-current source described in every group respectively includes two
A first constant-current source and the second constant-current source arranged side by side, it is double that the anode of described two constant-current sources arranged side by side is separately connected the hilted broadsword
Two branches of throw switch, state the negativing ending grounding of pulse constant current unit.
Further, first constant-current source is high constant-current source, and the second constant-current source is small current constant-current source, and the
The current value range of two constant-current sources is 0.1 μ A~10mA, and the current value range of the first constant-current source is 1 μ A~100mA.
Further,
The array gating switch includes:
Multiple row gating switches, the corresponding row gating switch of sensing unit described in every row；The of all row gating switches
One end is all connected with the output end of the voltage source, the second end of the corresponding row gating switch of every row and the row it is all sensitivity it is single
First first end connection；
Multiple column gating switches, the corresponding column gating switch of sensing unit described in each column, the as constant current of single-pole double throw
Source gating switch, the cathode ground connection of the pulse constant current unit.
Further, analog-digital conversion circuit as described ADC operational amplifier corresponding with column gating switch, the operation is put
The second end of the inverting input terminal connection respective column gating switch of big device, the normal phase input end connection of operational amplifier is with reference to electricity
Press VREF；
The output end of the operational amplifier is separately connected the input terminal of analog to digital conversion circuit ADC, the analog-to-digital conversion electricity
The output end of road ADC connects data processing module.
Further, it is connected between the inverting input terminal of the operational amplifier and the second end of column gating switch
Resistance R1；And resistance R2 is connected between the inverting input terminal of the operational amplifier and the output end of operational amplifier.
As a second aspect of the invention, a kind of MEMS non-refrigerated infrared detector thermal parameters test method, institute are provided
State MEMS non-refrigerated infrared detector thermal parameters test method:
The MEMS non-refrigerated infrared detector thermal parameters test method:
Step 1, MEMS non-refrigerated infrared detector thermal parameters are placed in working environment；
Step 2, first power module is accessed in test circuit, adjusts the electricity that voltage source makes pulse constant current unit both ends
It is pressed within the input range of operational amplifier；
Step 3, reference voltage V is configuredREFWork normally the operational amplifier in selection amplification computing circuit；
Step 4, array gating switch is controlled by shift register, so that controlling pulse constant current unit generates a pulse
Square wave current acquires the first constant-current source anode voltage and the second constant-current source anode voltage respectively, and the anode voltage of acquisition is made
For the anti-phase input of operational amplifier, and by operational amplifier amplification after, number is converted to by analog to digital conversion circuit ADC
Signal, then handled to obtain thermal capacitance, thermal conductivity and thermal response time by data processing module；
Step 5, array gating switch is controlled by shift register, the second constant-current source is selected to power to sensing unit, then will
The infrared light that blackbody radiation source gives off is incident on MEMS non-refrigerated infrared detector surface after chopper is modulated, respectively
Acquisition has infra-red radiation and without pulse constant current unit anode voltage under infra-red radiation, again by modulus after operational amplifier amplifies
Conversion circuit ADC is converted to digital signal, handles to obtain Blackbody response sensitivily finally by data processing module and infrared absorption is imitated
Rate；
Step 6, row gating switch and column gating switch are controlled, is selected next in the outer focal plane arrays (FPA) of MEMS non-brake method
A sensing unit, then repeatedly step 2~step 5, obtains the thermal parameters of other units of device；
Step 7, test is completed, and closes each device.
From the above as can be seen that provided by the invention tested based on MEMS non-refrigerated infrared detector thermal parameters
Circuit and test method, have following advantages compared with prior art:
(1) amplification computing circuit of the invention utilizes the constant-current source of reading circuit itself, when the control of pulse square wave electric current
Sequence requires simple；
(2) due to the amplification computing circuit that the common reading circuit of infrared detector is CTIA type, therefore this test method is complete
Complete utilization device itself reading circuit carries out thermal parameters test, changes to itself reading circuit minimum；
(3) test method of the invention completes the test of thermal parameters using the self-heating effect of device itself, it is only necessary to few
Measure excitation set and test equipment；
(4) test philosophy of the invention is to establish the initial non-equilibrium stage based on thermal balance to complete to measure, compared to biography
The thermostabilization test method of system, test method speed of the invention are faster, more efficient；
(5) test circuit of the invention may be implemented that chip-scale is integrated, and entire circuit system is by providing specific timing
Control is to complete corresponding function.
Detailed description of the invention
Fig. 1 is the structural block diagram of the embodiment of the present invention.
Fig. 2 is the circuit diagram of the embodiment of the present invention.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
As the first aspect of the present invention, a kind of MEMS non-refrigerated infrared detector calorifics based on self-heating effect is provided
Parameter detecting circuit is as depicted in figs. 1 and 2 that the thermal parameters of a non-refrigeration infrared detector array test circuit.
The MEMS non-refrigerated infrared detector thermal parameters test circuit includes: blackbody radiation source, chopper, power supply
Module, MEMS non-brake method outer focal plane arrays (FPA), array gating switch, amplify computing circuit and data processing module；
The light of the black body radiation is radiated on the outer focal plane arrays (FPA) of MEMS non-brake method by chopper, the copped wave
The light that device is used to control black body radiation reaches the outer focal plane arrays (FPA) of the MEMS non-brake method.
The MEMS non-refrigerated infrared detector, the infrared sensitive unit including multiple lines and multiple rows, each sensing unit are powered
It can generate heat afterwards or after absorbing infra-red radiation, electrical signal corresponding with its temperature can be generated；
The array gating switch for successively gating the sensing unit in MEMS infrared detector in turn, and exports institute
The electrical signal that the sensing unit chosen generates gives amplification computing circuit；
The amplification computing circuit is put for acquiring the variation of the electrical signal, and to the variation of electrical signal
Macrooperation is converted into digital signal and exports to data processing unit；
The power module, for powering to the selected sensing unit of array gating switch；
MEMS is calculated according to the actual test data of the amplification computing circuit output in the data processing unit
The thermal parameters of the sensing unit of infrared detector.
Device thermal capacitance is calculated according to the actual test data of the amplification computing circuit in the data processing unit
C, thermal response time τ, thermal conductivity G, Blackbody response sensitivily RIRWith infrared absorption efficiency eta；
It is understood that the present invention is based on sensors from heat effect and to combine extraneous black body radiation, it is electric using reading
The self-test of device thermal parameters is realized on road, and the reading circuit of test and the reading circuit of normal work are identical, operate letter
Just, measuring speed is fast, feature with high accuracy.And array gating switch controls the sensitivity in MEMS non-refrigerated infrared detector
Unit gates in turn, that is, is able to achieve the array class test of the sensing unit thermal parameters of MEMS non-refrigerated infrared detector.
Specifically, the power module includes voltage source and multiple pulse constant current units, MEMS non-refrigerated infrared detector
The corresponding pulse constant current unit of each column sensing unit；The pulse constant current unit to each column sensing unit for mentioning
For constant-current pulse signal.
Each pulse constant current unit includes that one group of constant-current source and a constant-current source by shift register control select
Open up pass；
Further, the constant-current source gating switch is single-pole double-throw switch (SPDT), and constant-current source described in every group respectively includes two
A first constant-current source and the second constant-current source arranged side by side, it is double that the anode of described two constant-current sources arranged side by side is separately connected the hilted broadsword
Two branches of throw switch, the negativing ending grounding of the pulse constant current unit.
It is to be understood that the constant current that the first constant-current source is provided with the second constant-current source differs greatly, it is double by hilted broadsword
Throw switch switches between two constant-current sources, the pulse current of one " one small one is big " is generated, so that detector generates one
A " one small one big " from thermal power.
The array gating switch includes:
Multiple row gating switches, the corresponding row gating switch of sensing unit described in every row；The of all row gating switches
One end is all connected with the output end of the voltage source, the second end of the corresponding row gating switch of every row and the row it is all sensitivity it is single
First first end connection；
Multiple column gating switches, the corresponding column gating switch of sensing unit described in each column, the as constant current of single-pole double throw
Source gating switch.
Further, the amplification computing circuit is operational amplifier corresponding with column gating switch, the operation amplifier
The second end of the inverting input terminal connection respective column gating switch of device, the normal phase input end of operational amplifier connect reference voltage
VREF；
The output end of the operational amplifier is separately connected the input terminal of analog to digital conversion circuit ADC, the analog-to-digital conversion electricity
The output end of road ADC connects data processing module.
Further, it is connected between the inverting input terminal of the operational amplifier and the second end of column gating switch
Resistance R1；And resistance R2 is connected between the inverting input terminal of the operational amplifier and the output end of operational amplifier.
It is understood that by the conducting of control row gating switch and the conducting of column gating switch, it is corresponding to control
Sensing unit gating.Wherein, the row gating switch is row shift register, and the column gating switch is column shift register.
It is to be understood that when some sensing unit in MEMS non-refrigerating infrared sensor array is strobed, then with
The row gating switch and column gating switch that this sensing unit is correspondingly connected with are both turned on, i.e. MEMS non-refrigeration infrared detector array
In some sensing unit when being strobed voltage source, the sensing unit and pulse constant current unit be sequentially connected in series forming circuit,
Constant current unit is controlled at this time
The gating circuit acquires the voltage signal of the sensing unit output end.Calculate the variation of the voltage signal
Measure Δ V.The data processing module is a kind of theory deduction knot by the equation of heat balance under the constant-current pulse signal function
The hardware module of the realizations such as fruit FPGA, single-chip microcontroller or DSP.
1. the theory analysis of thermal capacitance, thermal conductivity and thermal response time:
The theory deduction result of the equation of heat balance is as follows:
During the maximum value of the constant-current pulse signal, then the theory of sensing unit voltage variety Δ V t at any time
Derivation formula are as follows:
Wherein C is the thermal capacitance of device, and G is the thermal conductivity of device, and Δ V is the temperature difference of device sensing unit and environment, PshFor
Device under pulse high current from thermal power, Ps is under pulse low current from thermal power, and α is detector sensing unit
Voltage temperature coefficient.
When due to pulse duration t < < τ, then the first order Taylor series expansion of sensing unit voltage variety are as follows:
It can be seen that working as the burst length very in short-term, the relationship of sensing unit voltage variety at any time is linear function pass
System, if the linear function analytic expression fitted by actual test data are as follows: y=kt+b；Then the thermal capacitance and thermal conductivity of device can be with tables
It is shown as:
The thermal capacitance and thermal conductivity obtained according to actual test, and formula τ=C/G is combined, obtain the thermal response time τ of device.
2. the theory analysis of Blackbody response sensitivily and ir-absorbance:
If the ir radiant power that blackbody radiation source is incident on infrared detector surface is PIR, sponged by sensing unit
And the raised power of sensing unit temperature is caused to be PA, then ir-absorbance η can be indicated are as follows:
It is P when infrared detector receives powerIRInfra-red radiation after, the voltage variety of sensing unit is Δ
VIR, then the Blackbody response sensitivily of infrared detector are as follows:
It is P from thermal power under low current in no extraneous infra-red radiations, device caused due to self-heating effect
The voltage variety of sensing unit is Δ V, as Δ V=Δ VIRWhen, self-heating power P at this timesIt is red with being absorbed by sensing unit
External radiation power PAEqual, then the ir-absorbance η of infrared detector can be converted at this time are as follows:
Wherein self-heating power Ps=VI, V are the forward voltage of sensing unit, and I is the electric current for flowing through sensing unit；Detection
The calculation formula of the incident IR radiation power P IR of device are as follows:
Wherein A is infrared absorption area, τFFor the infrared transmittivity of detector camera lens, M is black matrix irradiation level, and d is black matrix
The aperture of radiation source, spacing of the D between infrared detector and blackbody radiation source.
Specifically, each pulse constant current unit includes that one group of constant-current source and one are issued by shift register
Pulse controlled constant-current source gating switch；The constant-current source gating switch is single-pole double-throw switch (SPDT), and constant-current source described in every group is divided equally
Not Bao Kuo two constant-current sources arranged side by side, respectively the first constant-current source and the second constant-current source, first constant-current source is that high current is permanent
Stream source, the second constant-current source is small current constant-current source, and the current value range of the second constant-current source is 0.1 μ A~10mA, the first constant current
The current value range in source is 1 μ A~100mA；Described two constant-current sources arranged side by side are separately connected the two of the single-pole double-throw switch (SPDT)
A branch, the shift register is used to control the gating of the single-pole double-throw switch (SPDT), to control the single-pole double-throw switch (SPDT)
It is switched between two constant-current sources, to obtain pulse square wave electric current, and controls the low current duration greater than heat sensor
Five times of unit thermal response time, high current duration are less than a thirtieth of thermal sensor unit thermal response time,
To allow the temperature of sensing unit to be higher than 2~10 DEG C of environment temperature for target.
Specifically, the amplification computing circuit is operational amplifier corresponding with column gating switch, and each operation is put
The second end of the inverting input terminal connection respective column gating switch of big device, for acquiring the electricity of respective column gating switch second end
It learns signal and the collected electrical signal of institute is amplified into operation；The normal phase input end of the operational amplifier connects reference voltage
VREF, the output end of the operational amplifier is separately connected the input terminal of analog to digital conversion circuit ADC, analog-digital conversion circuit as described
The output end of ADC connects data processing module.In the inverting input terminal of the operational amplifier and the second end of column gating switch
Between be connected with resistance R1；And it is connected between the inverting input terminal of the operational amplifier and the output end of operational amplifier
Second resistance R2.
As a second aspect of the invention, a kind of MEMS non-refrigerated infrared detector thermal parameters test method is provided,
The MEMS non-refrigerated infrared detector thermal parameters test method includes:
Step 1, MEMS non-refrigerated infrared detector thermal parameters are placed in working environment；
Step 2, first power module is accessed in test circuit, adjusts the electricity that voltage source makes pulse constant current unit both ends
It is pressed within the input range of operational amplifier；
Step 3, reference voltage V is configuredREFWork normally the operational amplifier in selection amplification computing circuit；
Step 4, array gating switch is controlled by shift register, so that controlling pulse constant current unit generates a pulse
Square wave current acquires the first constant-current source anode voltage and the second constant-current source anode voltage respectively, and the anode voltage of acquisition is made
For the anti-phase input of operational amplifier, and by operational amplifier amplification after, number is converted to by analog to digital conversion circuit ADC
Signal, then handled to obtain thermal capacitance, thermal conductivity and thermal response time by data processing module；
Step 5, array gating switch is controlled by shift register, the second constant-current source is selected to power to sensing unit, then will
The infrared light that blackbody radiation source gives off is incident on MEMS non-refrigerated infrared detector surface after chopper is modulated, respectively
Acquisition has infra-red radiation and without pulse constant current unit anode voltage under infra-red radiation, again by modulus after operational amplifier amplifies
Conversion circuit ADC is converted to digital signal, handles to obtain Blackbody response sensitivily finally by data processing module and infrared absorption is imitated
Rate；
Step 6, row gating switch and column gating switch are controlled, is selected next in the outer focal plane arrays (FPA) of MEMS non-brake method
A sensing unit, then repeatedly step 2~step 5, obtains the thermal parameters of other units of device；
Step 7, test is completed, and closes each device.
The principle of the present invention are as follows: pass through a pixel in row choosing and column selection switching gate infrared focal plane array, the picture
Member with constant-current source block coupled in series after with voltage source VddConnection forming circuit, constant current source module anode are defeated with amplification computing circuit
Enter connected, the output for amplifying computing circuit is connected with data processing module.First by single-pole double-throw switch (SPDT) in two constant-current sources
Between switch, one " one small one big " pulse current is generated, so that detector generates the self-heating of one " one small one is big "
Power.During pulse current, input signal of the voltage change of constant current source module as amplification computing circuit, quilt are acquired
To amplify computing circuit amplification, and carries out analog-to-digital conversion, the digital signal of output is received and processed by data processing module, thus
Obtain three thermal capacitance, thermal conductivity and thermal response time thermal parameters of device.Then by the fixed small constant current of selection of single-pole double-throw switch (SPDT)
Source, then the infrared light that blackbody radiation source gives off is incident on MEMS non-refrigerated infrared detector table after chopper is modulated
Face, acquisition has infra-red radiation and without constant-current source anode voltage under infra-red radiation respectively, again by ADC after operational amplifier amplifies
Module is converted to digital signal, handles to obtain Blackbody response sensitivily and two kinds of infrared absorption efficiency finally by data processing module
Thermal parameters.
It should be noted last that the above specific embodiment is only used to illustrate the technical scheme of the present invention and not to limit it,
Although being described the invention in detail referring to example, those skilled in the art should understand that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of the technical solution of the present invention, should all cover
In the scope of the claims of the present invention.
Claims (8)
1. a kind of MEMS non-refrigerated infrared detector thermal parameters test circuit, which is characterized in that the MEMS uncooled ir
Detector thermal parameters test circuit include: blackbody radiation source, chopper, power module, the outer focal plane arrays (FPA) of MEMS non-brake method,
Array gating switch amplifies computing circuit and data processing module；
The outer focal plane arrays (FPA) of the MEMS non-brake method includes the sensing unit of multiple lines and multiple rows；After each sensing unit is powered or
Person can generate heat after absorbing infra-red radiation, and can generate electrical signal corresponding with sensing unit temperature；
The array gating switch for successively gating the sensing unit in MEMS non-refrigerated infrared detector in turn, and exports
The electrical signal that the sensing unit chosen generates gives amplification computing circuit；
The amplification computing circuit amplifies fortune for acquiring the variation of the electrical signal, and to the variation of electrical signal
Calculation is converted into digital signal and exports to data processing unit；
The power module, for powering to the selected sensing unit of array gating switch；
MEMS non-brake method is calculated according to the actual test data of the amplification computing circuit output in the data processing unit
The thermal parameters of the sensing unit of infrared focus plane.
2. MEMS non-refrigerated infrared detector thermal parameters as described in claim 1 test circuit, which is characterized in that the electricity
Source module includes voltage source and multiple pulse constant current units, and each column sensing unit of MEMS non-refrigerated infrared detector is one corresponding
The pulse constant current unit；The pulse constant current unit is used to provide constant-current pulse signal to each column sensing unit.
3. the thermal parameters of MEMS non-refrigerated infrared detector as claimed in claim 2 test circuit, which is characterized in that each
The pulse constant current unit includes one group of constant-current source and a constant-current source gating switch controlled by shift register；
The constant-current source gating switch is single-pole double-throw switch (SPDT), and constant-current source described in every group respectively includes two the first perseverances arranged side by side
Stream source and the second constant-current source, the anode of described two constant-current sources arranged side by side are separately connected two branch of the single-pole double-throw switch (SPDT)
Road, the cathode ground connection of pulse constant current unit.
4. the thermal parameters of MEMS non-refrigerated infrared detector as claimed in claim 3 test circuit, which is characterized in that described
First constant-current source is high constant-current source, and the second constant-current source is small current constant-current source, and the current value range of the second constant-current source is
0.1 μ A~10mA, the current value range of the first constant-current source are 1 μ A~100mA.
5. the thermal parameters of MEMS non-refrigerated infrared detector as claimed in claim 2 test circuit, which is characterized in that
The array gating switch includes:
Multiple row gating switches, the corresponding row gating switch of sensing unit described in every row；The first end of all row gating switches
It is all connected with the output end of the voltage source, the second end of row gating switch corresponding to every row and all sensing units of the row the
One end connection；
Multiple column gating switches, the corresponding column gating switch of sensing unit described in each column, as the constant-current source choosing of single-pole double throw
Open up pass.
6. MEMS non-refrigerated infrared detector thermal parameters as claimed in claim 5 test circuit, which is characterized in that described to put
Macrooperation circuit includes: analog to digital conversion circuit ADC operational amplifier corresponding with column gating switch, the operational amplifier it is anti-
Phase input terminal connects the second end of respective column gating switch, and the normal phase input end of operational amplifier connects reference voltage VREF；
The output end of the operational amplifier is separately connected the input terminal of analog to digital conversion circuit ADC, analog-digital conversion circuit as described ADC
Output end connect data processing module.
7. MEMS non-refrigerated infrared detector thermal parameters as claimed in claim 6 test circuit, which is characterized in that described
Resistance R1 is connected between the inverting input terminal of operational amplifier and the second end of column gating switch；And the operational amplifier
Resistance R2 is connected between inverting input terminal and the output end of operational amplifier.
8. a kind of MEMS non-refrigerated infrared detector thermal parameters test method, which is characterized in that the MEMS uncooled ir
Detector thermal parameters test method:
Step 1, MEMS non-refrigerated infrared detector thermal parameters are placed in working environment；
Step 2, first power module is accessed in test circuit, adjusts voltage source and the voltage at pulse constant current unit both ends is being transported
Within the input range for calculating amplifier；
Step 3, reference voltage V is configuredREFWork normally the operational amplifier in selection amplification computing circuit；
Step 4, array gating switch is controlled by shift register, so that controlling pulse constant current unit generates a pulse square wave electricity
Stream, acquires the first constant-current source anode voltage and the second constant-current source anode voltage, and using the anode voltage of acquisition as operation respectively
The anti-phase input of amplifier, and by the operational amplifier amplification after, digital signal is converted to by analog to digital conversion circuit ADC, then
It is handled to obtain thermal capacitance, thermal conductivity and thermal response time by data processing module；
Step 5, array gating switch is controlled by shift register, selects the second constant-current source to give sensing unit power supply, then by black matrix
The infrared light that radiation source gives off is incident on MEMS non-refrigerated infrared detector surface after chopper is modulated, and acquisition has respectively
Infra-red radiation and without pulse constant current unit anode voltage under infra-red radiation, again by analog to digital conversion circuit after operational amplifier amplifies
ADC is converted to digital signal, handles to obtain Blackbody response sensitivily and infrared absorption efficiency finally by data processing module；
Step 6, row gating switch and column gating switch are controlled, next sensitivity in the outer focal plane arrays (FPA) of MEMS non-brake method is selected
Unit, then repeatedly step 2~step 5, obtains the thermal parameters of other units of device；
Step 7, test is completed, and closes each device.
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