CN110329988A - A kind of compound sacrificial layer preparation method of RF-MEMS switch - Google Patents
A kind of compound sacrificial layer preparation method of RF-MEMS switch Download PDFInfo
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- CN110329988A CN110329988A CN201910643502.9A CN201910643502A CN110329988A CN 110329988 A CN110329988 A CN 110329988A CN 201910643502 A CN201910643502 A CN 201910643502A CN 110329988 A CN110329988 A CN 110329988A
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- sacrificial layer
- mems
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 150000001875 compounds Chemical class 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 238000004873 anchoring Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0107—Sacrificial metal
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of RF-MEMS to switch compound sacrificial layer preparation method, belongs to RF-MEMS device fabrication techniques field.This method include planarization filling, sacrificial metal layer ise, photoetching glue victim layer prepare and etc..Using the method for the present invention, the planarization of mems switch beam can be improved, realize the preparation of the low contact spacing switch beam of 10nm ~ 500nm, to improve the reliability of mems switch, reduce mems switch driving voltage.
Description
Technical field
The present invention relates to RF-MEMS device fabrication techniques fields, particularly relate to a kind of compound sacrificial layer system of RF-MEMS switch
Preparation Method.
Background technique
RF-MEMS(RF, that is, Radio Frequency, radio frequency；MEMS, that is, Micro-Electro-Mechanical
System, MEMS) switch because having low-loss, high-isolation, the advantages such as can integrate, be miniaturized, is used to lead to by wide model
In the civil fields such as the military fields such as letter, radar and miniature tunable antenna.
Sacrificial layer preparation process is an extremely important step process in RF-MEMS switch preparation process, RF-MEMS switch
Height-precision, flatness and the contact height of switch beam are mainly influenced by sacrificial layer preparation process.
Currently, conventional use of sacrificial layer technology be difficult to do it is thin so that switch beam contact height consistency be difficult to control,
In addition, influenced by base metal lines fluctuating, sacrificial layer is difficult to do flat, and then affects the voltage of switch, reliability, consistent
Property.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of RF-MEMS to switch compound sacrificial layer preparation method, this method
The sacrificial layer prepared has the characteristics that low thickness, high-flatness, help to improve the height-precision of switch beam, flatness and
Contact height consistency, and help to realize the low contact spacing of switch beam.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of compound sacrificial layer preparation method of RF-MEMS switch comprising following steps:
(1) in the MEMS substrate surface splash-proofing sputtering metal layer for needing to do sacrificial layer, and metal layer is patterned, thus realization pair
The planarization of MEMS substrate is filled；
(2) filled MEMS substrate deposited metal layer in the manner of sputtering again is planarized to step (1), thus preparation the
One sacrificial layer, the height of the first sacrificial layer are used to define the clearance distance of switch beam contact；
(3) the MEMS substrate after step (2) sputtering is taken out, carries out chemical wet etching and remove photoresist, removes the metal layer of beams of metal anchoring area；
(4) the MEMS substrate after step (3) etching being removed photoresist carries out thin glue photoetching, completes the preparation of the second sacrificial layer, and herein
Make the contact structure of switch beam by lithography in the process；First sacrificial layer and the second sacrificial layer collectively form metal and combine with photoresist
Heterogeneous Composite sacrificial layer；
(5) the MEMS substrate for obtaining step (4) carries out heat treatment for solidification, completes the system of the compound sacrificial layer of low thickness high-flatness
It is standby.
Optionally, the material of metal layer is copper, aluminium or nickel in the step (1) (2) (3).
Optionally, patterned mode is stripping method or etching method in the step (1).
Optionally, the thickness and precision of metal layer is ± 5% in the step (2).
The present invention is acquired compared with prior art to be had the beneficial effect that
1, compared with existing photoetching glue victim layer or metal etc. have shape-retaining ability sacrificial layer, the present invention is using planarization filling skill
The more preferably flatness of switch may be implemented in art, and flatness can be better than 10nm.
2, and by CMP(Chemical Mechanical Polishing, chemically mechanical polishing) mode realizes sacrificial layer
The mode of planarization is compared, and planarization filling mode of the invention can be to avoid cumbersome chemical mechanical polishing process, and to setting
Standby dependency degree is smaller.
3, compared with photoetching glue victim layer, the present invention in the manner of sputtering, can make thinner sacrificial layer, contact with
The low tone less than 0.3 μm may be implemented away from and capable of accurately being controlled spacing in hearth electrode.
In short, contact spacing can be adjusted by sputtering and realize flexibly control, and the method for the present invention using the method for the present invention
It is easier to be reliable for compared with the existing technology.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of sacrificial layer in the embodiment of the present invention.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and specific embodiments.
A kind of compound sacrificial layer preparation method of RF-MEMS switch comprising following steps:
(1) in the MEMS substrate surface splash-proofing sputtering metal layer for needing to do sacrificial layer, and metal layer is patterned, thus realization pair
The planarization of MEMS substrate is filled；
(2) filled MEMS substrate deposited metal layer in the manner of sputtering again is planarized to step (1), thus preparation the
One sacrificial layer, the height of the first sacrificial layer are used to define the clearance distance of switch beam contact；
(3) the MEMS substrate after step (2) sputtering is taken out, carries out chemical wet etching and remove photoresist, removes the metal layer of beams of metal anchoring area；
(4) the MEMS substrate after step (3) etching being removed photoresist carries out thin glue photoetching, completes the preparation of the second sacrificial layer, and herein
Make the contact structure of switch beam by lithography in the process；First sacrificial layer and the second sacrificial layer collectively form metal and combine with photoresist
Heterogeneous Composite sacrificial layer；
(5) the MEMS substrate for obtaining step (4) carries out heat treatment for solidification, completes the system of the compound sacrificial layer of low thickness high-flatness
It is standby.
Optionally, the material of metal layer is copper, aluminium or nickel in the step (1) (2) (3).
Optionally, patterned mode is stripping method or etching method in the step (1).
Optionally, the thickness and precision of metal layer is ± 5% in the step (2).
The following are a more specific examples:
A kind of compound sacrificial layer preparation method of RF-MEMS switch, comprising the following steps:
The MEMS substrate for needing to carry out sacrificial layer preparation is toasted, carries out photoetching with lift-off special glue, sputtering is flat
Smoothization filled layer layers of copper, is removed with stripper, realizes planarization filling.
In embodiment, lift-off special glue is LOR glue, prepares the structure being easily peeled off；Layers of copper uses DC low-power
Sputtering, thickness is consistent with the thickness profile for needing to planarize, and thickness range is 10nm ~ 500nm；Stripper uses NMP stripper,
The MEMS substrate sputtered is put into stripper, takes out after being impregnated 1 hour ~ 3 hours at 70 DEG C and is carried out with a large amount of deionized waters
Rinsing, nitrogen gun drying.Complete the preparation of planarization filled layer.
By stepTreated MEMS substrate hot plate heating, drying, progress second layer layers of copper sputtering；
In embodiment, by stepIt is middle complete planarization filling MEMS substrate drying carry out the sputtering of second layer layers of copper, sputtering according to
It is old to be sputtered using DC low-power；Thickness, that is, contact spacing of second of layers of copper, it can be achieved that 10nm ~ 500nm low tone away from contact, also
The contact of 0.5 ~ 2 μm of high spacing can be realized in this approach.
By stepThe MEMS substrate for completing sputtering carries out photoetching, is performed etching using copper etching liquid, removes switch beam
The layers of copper of anchoring area position, cleaning drying of then removing photoresist；
In embodiment, by stepThe MEMS substrate for completing sputtering carries out photoetching, and reticle defines the anchoring area of switch beam；Light
It carves using AZ6130 photoresist；Etching copper is using FeCl3 base etching liquid；It goes at 70 DEG C of glue to impregnate using AZ400T
10min ~ 40min removes photoresist.
By stepComplete anchoring area etching MEMS substrate carry out spin coating photoetching, photoresist with a thickness of 0.3 ~ 0.5 μm, into
Line mask exposure, development, define switch beam anchoring area and contact；
In embodiment, by stepThe MEMS substrate for completing anchoring area etching carries out spin coating photoetching, photoresist AZ1500, photoetching
Glue is with a thickness of 0.3 ~ 0.5 μm.
By stepThe MEMS substrate for completing photoetching is heat-treated on hot plate；
In embodiment, by stepThe MEMS substrate for completing photoetching, which is put on hot plate, carries out 10min ~ 30min at 90 ~ 110 DEG C
Heat treatment.
The low compound sacrificial layer preparation of contact spacing high-flatness switch beam is completed, the sacrificial layer prepared is as shown in Figure 1, figure
In there is MEMS silicon substrate 1, planarization filled layer 2, first layer Cu sacrificial layer 3, second layer photoresist layer 4 and contact structure 5.
In short, the sacrificial layer that the method for the present invention is prepared has the characteristics that low thickness, high-flatness, switch is helped to improve
Depth of beam precision, flatness and contact height consistency, and help to realize the low contact spacing of switch beam.Using this hair
The planarization of mems switch beam can be improved in bright technical solution, realizes the preparation of the low contact spacing switch beam of 10nm ~ 500nm,
To improve the reliability of mems switch, mems switch driving voltage is reduced.
It is to be appreciated that be intended merely to facilitate this field common for the above-mentioned narration for this patent specific embodiment
Technical staff understands this patent scheme and the exemplary description enumerated, does not imply that the protection scope of this patent is limited solely to
In this few example, those of ordinary skill in the art completely can the art of this patent scheme is made fully understand under the premise of,
In the form of not paying any creative work, by taking combination technique feature, replacement to each example cited by this patent
More technical characteristics etc. mode is added in some technical characteristics, obtains more specific embodiments, all these specific implementations
Mode is within the covering scope of patent claims book, and therefore, these new specific embodiments also should be in this patent
Protection scope within.
Claims (4)
1. a kind of RF-MEMS switchs compound sacrificial layer preparation method, which comprises the following steps:
(1) in the MEMS substrate surface splash-proofing sputtering metal layer for needing to do sacrificial layer, and metal layer is patterned, thus realization pair
The planarization of MEMS substrate is filled；
(2) filled MEMS substrate deposited metal layer in the manner of sputtering again is planarized to step (1), thus preparation the
One sacrificial layer, the height of the first sacrificial layer are used to define the clearance distance of switch beam contact；
(3) the MEMS substrate after step (2) sputtering is taken out, carries out chemical wet etching and remove photoresist, removes the metal layer of beams of metal anchoring area；
(4) the MEMS substrate after step (3) etching being removed photoresist carries out thin glue photoetching, completes the preparation of the second sacrificial layer, and herein
Make the contact structure of switch beam by lithography in the process；First sacrificial layer and the second sacrificial layer collectively form metal and combine with photoresist
Heterogeneous Composite sacrificial layer；
(5) the MEMS substrate for obtaining step (4) carries out heat treatment for solidification, completes the system of the compound sacrificial layer of low thickness high-flatness
It is standby.
2. RF-MEMS according to claim 1 switchs compound sacrificial layer preparation method, which is characterized in that the step (1)
(2) material of metal layer is copper, aluminium or nickel in (3).
3. RF-MEMS according to claim 1 switchs compound sacrificial layer preparation method, which is characterized in that the step (1)
In patterned mode be stripping method or etching method.
4. RF-MEMS according to claim 1 switchs compound sacrificial layer preparation method, which is characterized in that the step (2)
The thickness and precision of middle metal layer is ± 5%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910643502.9A CN110329988A (en) | 2019-07-17 | 2019-07-17 | A kind of compound sacrificial layer preparation method of RF-MEMS switch |
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| CN201910643502.9A CN110329988A (en) | 2019-07-17 | 2019-07-17 | A kind of compound sacrificial layer preparation method of RF-MEMS switch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113104806A (en) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | Preparation method of composite metal sacrificial layer of MEMS device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018734A (en) * | 2004-02-20 | 2007-08-15 | 无线微机电有限公司 | A method for making MEMS switch, and MEM device and its making method |
| CN101118819A (en) * | 2006-08-04 | 2008-02-06 | 精工爱普生株式会社 | MEMS switch and MEMS switch manufacturing method |
| US20080157625A1 (en) * | 2006-12-28 | 2008-07-03 | Sunonwealth Electric Machine Industry Co., Ltd. | Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer |
| CN101780944A (en) * | 2010-01-05 | 2010-07-21 | 上海集成电路研发中心有限公司 | Preparation method of MEMS microbridge structure |
| CN102205942A (en) * | 2011-05-13 | 2011-10-05 | 上海集成电路研发中心有限公司 | Manufacturing method of sacrifice layer of MEMS (Micro-electromechanical System) |
| CN104627956A (en) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | Preparation method of double-layer optical resist sacrificial layers of RF MEMS device |
| CN106298371A (en) * | 2016-08-30 | 2017-01-04 | 北京航天微电科技有限公司 | A kind of radio-frequency micro electromechanical switch based on superficial semiconductor technique and preparation method thereof |
-
2019
- 2019-07-17 CN CN201910643502.9A patent/CN110329988A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018734A (en) * | 2004-02-20 | 2007-08-15 | 无线微机电有限公司 | A method for making MEMS switch, and MEM device and its making method |
| CN101118819A (en) * | 2006-08-04 | 2008-02-06 | 精工爱普生株式会社 | MEMS switch and MEMS switch manufacturing method |
| US20080157625A1 (en) * | 2006-12-28 | 2008-07-03 | Sunonwealth Electric Machine Industry Co., Ltd. | Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer |
| CN101780944A (en) * | 2010-01-05 | 2010-07-21 | 上海集成电路研发中心有限公司 | Preparation method of MEMS microbridge structure |
| CN102205942A (en) * | 2011-05-13 | 2011-10-05 | 上海集成电路研发中心有限公司 | Manufacturing method of sacrifice layer of MEMS (Micro-electromechanical System) |
| CN104627956A (en) * | 2015-02-09 | 2015-05-20 | 中国电子科技集团公司第五十四研究所 | Preparation method of double-layer optical resist sacrificial layers of RF MEMS device |
| CN106298371A (en) * | 2016-08-30 | 2017-01-04 | 北京航天微电科技有限公司 | A kind of radio-frequency micro electromechanical switch based on superficial semiconductor technique and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| MOHAMEDGAD-EL-HAK: "《微机电系统设计与加工》", 28 February 2010 * |
| 刘卫国等: "《集成非制冷热成像探测阵列》", 30 June 2004 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113104806A (en) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | Preparation method of composite metal sacrificial layer of MEMS device |
| CN113104806B (en) * | 2021-03-11 | 2024-05-03 | 中国电子科技集团公司第五十四研究所 | Preparation method of MEMS device composite metal sacrificial layer |
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