CN110311643A - A kind of thin film bulk acoustic wave resonator and preparation method thereof - Google Patents
A kind of thin film bulk acoustic wave resonator and preparation method thereof Download PDFInfo
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- CN110311643A CN110311643A CN201910706032.6A CN201910706032A CN110311643A CN 110311643 A CN110311643 A CN 110311643A CN 201910706032 A CN201910706032 A CN 201910706032A CN 110311643 A CN110311643 A CN 110311643A
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- 238000002360 preparation method Methods 0.000 title claims description 51
- 239000010409 thin film Substances 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims description 83
- 239000010408 film Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000005422 blasting Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910003438 thallium oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The present invention provides a kind of thin film bulk acoustic wave resonator and preparation method thereof.Preparation method includes: to provide first substrate and the second substrate；The first groove is formed on the first substrate；At least one set of longitudinal Bragg reflection grid are formed in the second substrate, every group includes at least two layers film material plies with not acoustic impedance；The side that the second substrate is provided with longitudinal Bragg reflection grid is bonded with the side that first substrate is provided with the first groove；Piezo-electric stack structure is formed away from the side of first substrate in the second substrate；At least one set of lateral reflecting grating is formed in the fringe region of piezo-electric stack structure, to complete the preparation of the thin film bulk acoustic wave resonator.Thin film bulk acoustic wave resonator prepared by the present invention is respectively provided with reflecting grating on laterally and longitudinally, is conducive to for acoustic wave energy to be limited in device effective coverage, and realization can fall into effect, can be further improved the Q value of device, to make resonator frequency stability with higher.
Description
Technical field
The present invention relates to a kind of resonators, and in particular to a kind of thin film bulk acoustic wave resonator and preparation method thereof.
Background technique
Being achieved in that of radio-frequency filter most mainstream surface acoustic wave (Surface Acoustic Wave, SAW) is filtered at present
Wave device and the filter for being based on thin film bulk acoustic wave resonator (Film Bulk Acoustic Resonator, FBAR) technology.SAW
Filter is used below proper in 1.5GHz due to its own limitation.However, current home control network communication protocol is
Already using the frequency range for being greater than 2.5GHz, the filter based on FBAR technology at this moment must be used.
The structure and preparation method of FBAR device have had very much, in previous structure and preparation method, frequently with silicon
Support construction is done, using PSG as sacrificial layer material, forms air-gap finally by corrosion PSG sacrificial layer.In ideal situation
In, FBAR device only excites the acoustic wave mode along film thickness direction, these modes are passed along the thickness direction of piezoelectric layer
It broadcasts, referred to as longitudinal mechanical wave.But in practice, time-varying electric field is applied to FBAR device upper/lower electrode, can motivated simultaneously vertical
To the acoustic wave modes such as sound wave and transverse sound wave and high-order harmonic wave, transverse sound wave and high-order harmonic wave can significantly reduce FBAR device
Performance.It is exactly to pass through to reduce FBAR active area (top electrode, lower electrode there are many structure in existing FBAR design structure
Overlapping region between piezoelectric layer) the acoustics loss of boundary improves the performance of resonator.For example, being powered in FBAR device
Frame (Frame) is arranged in pole edge, is distinguished into central area and edge frame area for active, this two region generates impedance mismatching,
Part desired pattern can be returned to active area by impedance mismatching, improve the energy limit of the device active region FBAR, and then improve device
Part Q value.Not fully due to the acoustic impedance mismatch that is formed in this way, although sound wave energy can be reduced to a certain extent
The leakage of amount, but still acoustic wave energy is had toward horizontal and vertical leakage.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of film bulk acoustic resonator is provided
Device and preparation method thereof.
The first aspect of the present invention provides a kind of preparation method of thin film bulk acoustic wave resonator, comprising the following steps:
S110, first substrate and the second substrate are provided；
S120, the first groove is formed on the first substrate；
S130, at least one set of longitudinal Bragg reflection grid, longitudinal direction Prague described in every group are formed on the second substrate
Reflecting grating includes at least two layers film material plies with not acoustic impedance；
S140, side and the first substrate setting that the second substrate is provided with to longitudinal Bragg reflection grid
There is the side of first groove to be bonded；
S150, piezo-electric stack structure, the piezoelectric pile are formed away from the side of the first substrate in the second substrate
Stack structure is contacted with longitudinal Bragg reflection grid；
S160, at least one set of lateral reflecting grating is formed in the fringe region of the piezo-electric stack structure, it is described thin to complete
The preparation of membrane body acoustic resonator.
Optionally, the second substrate includes body silicon layer and the buried oxide layer being successively set on the body silicon layer and silicon knot
Structure layer；Step S130 is specifically included:
The graphical silicon structural layer, to form the second groove for running through the silicon structural layer；
The first film material layer and the second film are sequentially formed in the silicon structural layer surface and second groove
Material layer, the first film material layer and second film material plies have different acoustic impedances；
The silicon structural layer is processed by shot blasting, to remove the first film material layer for being located at the silicon structural layer surface
With the second film material plies, and the surface for making the silicon structural layer and second film material plies in second groove
Surface flushes, wherein the first film material layer and second film material plies in second groove are formed
The longitudinal direction Bragg reflection grid.
Optionally, after step s 140, before step S150 further include:
S141, the body silicon layer in the removal the second substrate and the buried oxide layer；
Step S150 is specifically included:
The piezo-electric stack structure is formed away from the side of the first substrate in the silicon structural layer.
Optionally, the step of the silicon structural layer forms the piezo-electric stack structure away from the side of the first substrate
It specifically includes:
Lower electrode metal layer, and the graphical lower electrode metal layer are formed, to form lower electrode, the lower electrode is at least
Part covers second film material plies；
Form piezoelectric layer；
Form upper electrode metal layer；
Form passivation layer；
Using the passivation layer as exposure mask, the upper electrode metal layer is etched, the top electrode is formed；Wherein, the lower electricity
Pole, the piezoelectric layer and the top electrode collectively constitute the piezo-electric stack structure.
Optionally, step S160 is specifically included:
The fringe region of the piezoelectric layer is patterned, it is recessed through at least one third of the piezoelectric layer with formation
Slot, at least one described third groove are corresponding with longitudinal Bragg reflection grid；Wherein, each third groove is adjacent thereto
Piezoelectric layer form the lateral reflecting grating based on air-gap.
Optionally, step S160 further include:
Third film material plies, the third film material plies and the piezoelectric layer are formed in each third groove
Acoustic impedance is different；Wherein, each third film material plies piezoelectric layer adjacent thereto forms the transverse direction reflection based on Prague
Grid.
Optionally, the first film material layer is silica, and second film material plies are aluminium nitride；And/or
The third film material plies are silicon dioxide layer, and the piezoelectric layer is aln layer.
Optionally, preparation method further includes carrying out after forming at least one third groove through the piezoelectric layer
Following step:
The graphical passivation layer, forms the first via hole for running through the passivation layer, and formed in first via hole
Top electrode lead-out wire, the top electrode lead-out wire are electrically connected with the top electrode；
The graphical piezoelectric layer, forms the second via hole for running through the piezoelectric layer, and formed in second via hole
Lower electrode outlet line, the lower electrode outlet line are electrically connected with the lower electrode.
Optionally, preparation method further includes the graphical piezoelectric layer, forms the second via hole for running through the piezoelectric layer, and
The following step carried out after electrode outlet line under being formed in second via hole:
Form release channel, the release channel sequentially pass through the piezo-electric stack structure extend to it is described first recessed
Slot connection；
XeF is provided into the release channel2Etching gas, etch the piezo-electric stack structure and first groove it
Between silicon structural layer so that first groove and the piezo-electric stack fabric connectivity.
The second aspect of the present invention is provided a kind of thin film bulk acoustic wave resonator, is prepared to be formed using the above method.
Thin film bulk acoustic wave resonator provided by the invention and preparation method thereof, respectively in thin film bulk acoustic wave resonator along base
At least one set of longitudinal Bragg reflection grid of plate length direction setting, can effectively reduce the loss of longitudinal sound wave, along substrate
At least one set of lateral reflecting grating is accordingly arranged in thickness direction, and there are two types of structures for transverse direction reflecting grating tool, and one kind is based on air-gap
Lateral reflecting grating, another kind is the lateral reflecting grating based on Prague, both can effectively reduce the damage of transverse sound wave
Consumption.Since at least one set of reflecting grating being arranged in both direction all has the film material plies of two-layer laminate, and the thin-film material
Layer has not acoustic impedance, can utilize the differential reflection sound wave of adjacent film material layer impedance, realize the maximum of acoustic wave energy
It utilizes, desired pattern can be returned to active area, be conducive to for acoustic wave energy to be limited in device effective coverage, realization can fall into work
With can be further improved the Q value of device, to make resonator frequency stability with higher.
Detailed description of the invention
Fig. 1 is the preparation flow figure of thin film bulk acoustic wave resonator of the present invention；
Fig. 2 is the preparation process flow step 1 of the embodiment of the present invention；
Fig. 3 is the preparation process flow step 2 of the embodiment of the present invention；
Fig. 4 is the preparation process flow step 3 of the embodiment of the present invention；
Fig. 5 is the preparation process flow step 4 of the embodiment of the present invention；
Fig. 6 is the preparation process flow step 5 of the embodiment of the present invention；
Fig. 7 is the preparation process flow step 6 of the embodiment of the present invention；
Fig. 8 is the preparation process flow step 7 of the embodiment of the present invention；
Fig. 9 is the preparation process flow step 8 of the embodiment of the present invention；
Figure 10 is the preparation process flow step 9 of the embodiment of the present invention；
Figure 11 is the preparation process flow step 10 of the embodiment of the present invention；
Figure 12 is the preparation process flow step 11 of the embodiment of the present invention；
Figure 13 is the preparation process flow step 12 of the embodiment of the present invention；
Figure 14 is the preparation process flow step 13 of the embodiment of the present invention；
Figure 15 is the preparation process flow step 14 of the embodiment of the present invention；
Figure 16 is the preparation process flow step 15 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague；
Figure 17 is the preparation process flow step 16 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague；
Figure 18 is the preparation process flow step 17 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague；
Figure 19 is the preparation process flow step 18 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague；
Figure 20 is the preparation process flow step 19 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague；
Figure 21 is the preparation process flow step 20 of the embodiment of the present invention, wherein (a) is the transverse direction reflection based on air-gap
Grid (b) are the lateral reflecting grating based on Prague.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
As shown in Figure 1, the first aspect of the present invention is thin film bulk acoustic wave resonator preparation method S100, specifically include following
Step:
S110, first substrate and the second substrate are provided；
S120, the first groove is formed on the first substrate；
S130, at least one set of longitudinal Bragg reflection grid, longitudinal direction Prague described in every group are formed on the second substrate
Reflecting grating includes at least two layers film material plies with not acoustic impedance；
S140, side and the first substrate setting that the second substrate is provided with to longitudinal Bragg reflection grid
There is the side of first groove to be bonded；
S150, piezo-electric stack structure, the piezoelectric pile are formed away from the side of the first substrate in the second substrate
Stack structure is contacted with longitudinal Bragg reflection grid；
S160, at least one set of lateral reflecting grating is formed in the fringe region of the piezo-electric stack structure, it is described thin to complete
The preparation of membrane body acoustic resonator.
The present invention is prepared for a kind of thin film bulk acoustic wave resonator, respectively FBAR device along substrate length direction be arranged to
Few one group of longitudinal direction Bragg reflection grid, can effectively reduce the loss of longitudinal sound wave, accordingly be arranged along substrate thickness direction
At least one set of transverse direction reflecting grating, structure that there are two types of transverse direction reflecting grating tools is a kind of for the lateral reflecting grating based on air-gap, another
Kind is the lateral reflecting grating based on Prague, and two kinds of lateral reflecting gratings can effectively reduce the loss of transverse sound wave.Due to two
Every group of reflecting grating that a side sets up all has the film material plies of at least two-layer laminate, and the film material plies have difference
Acoustic impedance can utilize the differential reflection sound wave of adjacent film material layer impedance, realize that the maximum of acoustic wave energy utilizes, can incite somebody to action
Desired pattern returns to active area, is conducive to for acoustic wave energy to be limited in device effective coverage, and realization can fall into effect, can be further
The Q value for improving device, to make resonator frequency stability with higher.
It will be hereafter described in detail with specific embodiment:
Fig. 2~21 are a kind of thin film bulk acoustic wave resonator preparation technology flow chart of the embodiment of the present invention, the preparation flow packet
It includes:
Step 1: providing the first substrate 100 of single or double polishing, which can be silicon wafer, can also be with
It is the substrates such as SiC, wherein polishing faces upward, single-sided polishing face can be any one side of first substrate, standard cleaning is carried out, referring to
Fig. 2.
Step 2: in the upper surface dry etching of first substrate 100, forming the first groove 101, Fig. 3 is seen, wherein first is recessed
The depth of slot 101 is the thickness of 0.1 μm of entire first substrate to the first substrate 100.It should be noted that the first groove 101
Thickness can specifically be set according to actual needs, can be 0.1 μm to the thickness for cutting through entire first substrate 100, that is to say, that
First groove 101 can run through first substrate.
Step 3: provide single or double polish the second substrate 200, the second substrate be soi wafer, wherein polish towards
On, standard cleaning is carried out, as shown in figure 4, the second substrate 200 successively includes body silicon layer 201 and sets gradually on body silicon layer
Buried oxide layer 202, silicon structural layer 203.
Step 4: silicon structural layer 203 being patterned and etched in the upper surface of the second substrate 200, forms through-silicon knot
Second groove 204 of structure layer, specifically, forming the second groove 204 around setting in the second substrate, as shown in Figure 5.
Step 5: it is thin that first with not acoustic impedance is sequentially depositing in 203 surface of silicon structural layer and the second groove 204
Membrane layers 300 and the second film material plies 400, referring to Fig. 6.
It should be noted that the first film material layer 300 can be silica, the second film material plies in the present embodiment
400 can be aluminium nitride, but not limited to this two kinds of materials, such as: the first film material layer 300 can also be silicon nitride, nitrogen
Silica, silicon carbide etc., the second film material plies 400 can also be tungsten, titanium oxide, thallium oxide etc., certainly, those skilled in the art
Member can also select some other material with different impedances, herein and be not especially limited according to actual needs.
Step 6: CMP planarization being carried out to the upper surface of silicon structural layer 203, throws longitudinal Bragg reflection gate region except design
Outer reflection grid material, specifically, throwing except the first film material layer 300 and the second film material positioned at 203 surface of silicon structural layer
The bed of material 400, and make the surface of silicon structural layer 203 and the flush of the second film material plies 400 in the second groove 204,
Wherein, the first film material layer 300 in the second groove 204 and the second film material plies 400 make silicon structural layer 203 and
The first film material layer 300 that is arranged on two grooves 204,400 thickness of the second film material plies are identical, to form longitudinal Prague
Reflecting grating, as shown in Figure 7.
It should be noted that longitudinal Bragg reflection grid can contain only a pair by silica-filled the first film material
The bed of material 300 and the combination that the second film material plies 400 are filled by aluminium nitride, can also contain multipair the first film material layer 300
With the combination of the second film material plies 400, determined with specific reference to actual needs.
It should be noted that since every group of longitudinal direction Bragg reflection grid all have at least two layers alternate film material plies,
And the film material plies have not acoustic impedance, can utilize the differential reflection sound wave of adjacent film material layer impedance, realization sound
The maximum of wave energy utilizes.
Step 7: the second substrate 200 being spun upside down, side and the first substrate of longitudinal Bragg reflection grid will be provided with
100 are provided with the side alignment of the first groove 101, as shown in Figure 8.
Step 8: the second substrate 200 and first substrate 100 being subjected to disk Direct Bonding, as shown in Figure 9.
Step 9: body silicon layer 201 and buried oxide layer 202 after removal bonding in the second substrate 200, as shown in Figure 10.
Step 10: the electrode metal in the case where silicon structural layer 203 is deposited away from the side of first substrate 100, and graphically lower electricity
Pole metal forms the lower electrode 500 of resonator, as shown in figure 11.
Step 11: depositing piezoelectric film forms piezoelectric layer 600, as shown in figure 12.
Step 12: deposition upper electrode metal 700, as shown in figure 13.
Step 13: deposit passivation layer material is simultaneously graphical, forms passivation layer 800, as shown in figure 14.
Step 14: using passivation layer as exposure mask, upper electrode metal 700 being performed etching, top electrode 700 is formed, such as Figure 15 institute
Show, it should be noted that be sequentially depositing the lower electrode 500 to be formed, piezoelectric layer 600 and top electrode 700 collectively constitute piezo-electric stack
Structure.
It should be noted that the material of the lower electrode 500 of piezo-electric stack structure and top electrode 700 can identical not yet
Together, for example including following material and combinations thereof: tungsten, silver, zirconium, molybdenum, platinum platinum, ruthenium, iridium, titanium tungsten, copper, titanium, chromium, hafnium, aluminium.Wherein
Piezoelectric film material include aluminium nitride, lithium niobate, lithium tantalate, lead zirconate titanate, zinc oxide, lithium tetraborate and its doping film or
Combination.
Step 15: piezoelectric layer 600 being patterned and etched, forms at least one third in 600 edge of piezoelectric layer
Groove 900, the third groove 900 of formation and adjacent piezoelectric layer 600 form the lateral reflecting grating based on air-gap, such as Figure 16
(a) shown in.
It should be noted that since the lateral reflecting grating based on air-gap has air-gap structure and piezoelectric layer, Neng Gouli
With the different impedance of air-gap structure piezoelectric layer adjacent thereto come reflected acoustic wave, realize that the maximum of acoustic wave energy utilizes.
Specifically, forming two third grooves 900 in 600 edge of piezoelectric layer, certainly, those skilled in the art can be with
According to actual needs, multiple third grooves also can be set, herein and be not especially limited.
In addition, the material different from piezoelectric layer acoustic impedance is filled in third groove 900 forms third film material plies, it should
Third film material plies piezoelectric layer 901 adjacent thereto forms the lateral reflecting grating based on Prague, as shown in Figure 16 (b).
It should be noted that third film material plies 900 can be silica, adj acent piezoelectric layer 901 in the present embodiment
It can be aluminium nitride, but not limited to this two kinds of materials, such as: third film material plies 900 can also be silicon nitride, nitrogen oxidation
Silicon, silicon carbide etc., adj acent piezoelectric layer 901 can also be tungsten, titanium oxide, thallium oxide etc., and certainly, those skilled in the art can be with
According to actual needs, some other material with different impedances is selected, herein and is not especially limited.Specifically, wherein base
Lateral reflecting grating in Prague can contain only a pair by silica-filled third film material plies 900 and by aluminium nitride
The combination of the adj acent piezoelectric layer 901 of filling can also contain the group of multipair third film material plies 900 and adj acent piezoelectric layer 901
It closes.
It should be noted that since every group of lateral reflecting grating based on Prague all has at least two layers alternate film material
The bed of material, and the film material plies have not acoustic impedance, can utilize the differential reflection sound wave of adjacent film material layer impedance, it is real
The maximum of existing acoustic wave energy utilizes.
Step 16: passivation layer 800 being patterned and etched, the first via hole 801 for running through passivation layer is formed, such as Figure 17
(a) and shown in (b).
Step 17: piezoelectric layer 600 being patterned and etched, the second via hole 601 for running through piezoelectric layer is formed, such as Figure 18
(a) and shown in (b).
Step 18: depositing and graphical top electrode contacts metal, 801 top electrodes for forming device are drawn in the first via hole
Line 1002, wherein, top electrode lead-out wire 1002 is electrically connected with top electrode 700, deposits and graphically descend electrode contact metal, the
The lower electrode outlet line 1001 of device is formed in two via holes 601, wherein lower electrode outlet line 1001 is electrically connected with lower electrode 500,
As shown in Figure 19 (a) and 19 (b).
Step 19: the front of device being performed etching, the release channel of etching silicon structural layer is opened, forms release channel
1100, which sequentially passes through piezo-electric stack structure to being connected to the first groove 101, specifically, release channel
1100 through-thickness sequentially pass through piezoelectric layer 600, lower electrode 500, silicon structural layer 203, in addition, release channel 1100 can also be with
Through-thickness sequentially passes through piezoelectric layer 800, top electrode 700, piezoelectric layer 600, lower electrode 500, silicon structural layer 203, such as Figure 20
(a) and shown in (b).
Step 20: device is placed in XeF2In, XeF2Gas is by release channel 1100, by device inside piezo-electric stack knot
203 partial etching of silicon structural layer between structure and the first groove 101, so that the first groove 101 and piezo-electric stack fabric connectivity,
The preparation for completing device, as shown in Figure 21 (a) and (b).
Second aspect forms a kind of thin film bulk acoustic wave resonator according to above-mentioned preparation method, before specific preparation method reference
Literary related record, therefore not to repeat here.The thin film bulk acoustic wave resonator includes the longitudinal Bragg reflection grid recorded above and cross
To reflecting grating, the acoustic wave energy of vertical and horizontal can effectively be inhibited to reveal, be conducive to acoustic wave energy being limited in device effective
Region, realization can fall into effect, can be further improved the Q value of device.
It is understood that embodiment of above is intended to be merely illustrative of the present and the illustrative embodiments that use,
However the present invention is not limited thereto.For those skilled in the art, do not depart from spirit of the invention and
In the case where essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of thin film bulk acoustic wave resonator, which comprises the following steps:
S110, first substrate and the second substrate are provided；
S120, the first groove is formed on the first substrate；
S130, at least one set of longitudinal Bragg reflection grid, longitudinal direction Bragg reflection described in every group are formed on the second substrate
Grid include at least two layers film material plies with not acoustic impedance；
S140, the side that the second substrate is provided with longitudinal Bragg reflection grid and first substrate setting are
State the side bonding of the first groove；
S150, piezo-electric stack structure, the piezo-electric stack knot are formed away from the side of the first substrate in the second substrate
Structure is contacted with longitudinal Bragg reflection grid；
S160, at least one set of lateral reflecting grating is formed in the fringe region of the piezo-electric stack structure, to complete the thin-film body
The preparation of acoustic resonator.
2. thin film bulk acoustic wave resonator preparation method according to claim 1, which is characterized in that the second substrate includes
Body silicon layer and the buried oxide layer and silicon structural layer being successively set on the body silicon layer；Step S130 is specifically included:
The graphical silicon structural layer, to form the second groove for running through the silicon structural layer；
The first film material layer and the second thin-film material are sequentially formed in the silicon structural layer surface and second groove
Layer, the first film material layer and second film material plies have different acoustic impedances；
The silicon structural layer is processed by shot blasting, to remove the first film material layer and for being located at the silicon structural layer surface
Two film material plies, and make the surface of the silicon structural layer and the surface of second film material plies in second groove
It flushes, wherein the first film material layer and second film material plies in second groove, described in formation
Longitudinal Bragg reflection grid.
3. thin film bulk acoustic wave resonator preparation method according to claim 2, which is characterized in that after step s 140,
Before step S150 further include:
S141, the body silicon layer in the removal the second substrate and the buried oxide layer；
Step S150 is specifically included:
The piezo-electric stack structure is formed away from the side of the first substrate in the silicon structural layer.
4. thin film bulk acoustic wave resonator preparation method according to claim 3, which is characterized in that carried on the back in the silicon structural layer
Side from the first substrate forms the step of piezo-electric stack structure and specifically includes:
Lower electrode metal layer, and the graphical lower electrode metal layer are formed, to form lower electrode, the lower electrode is at least partly
Cover second film material plies；
Form piezoelectric layer；
Form upper electrode metal layer；
Form passivation layer；
Using the passivation layer as exposure mask, the upper electrode metal layer is etched, the top electrode is formed；Wherein, the lower electrode, institute
It states piezoelectric layer and the top electrode collectively constitutes the piezo-electric stack structure.
5. thin film bulk acoustic wave resonator preparation method according to claim 4, which is characterized in that step S160 is specifically wrapped
It includes:
The fringe region of the piezoelectric layer is patterned, to form at least one the third groove for running through the piezoelectric layer,
At least one described third groove is corresponding with longitudinal Bragg reflection grid；Wherein, each third groove is adjacent thereto
The piezoelectric layer forms the lateral reflecting grating based on air-gap.
6. thin film bulk acoustic wave resonator preparation method according to claim 5, which is characterized in that step S160 further include:
Third film material plies, the acoustic resistance of the third film material plies and the piezoelectric layer are formed in each third groove
Anti- difference；Wherein, each third film material plies piezoelectric layer adjacent thereto forms the transverse direction reflection based on Prague
Grid.
7. thin film bulk acoustic wave resonator preparation method according to claim 6, which is characterized in that the first film material
Layer is silica, and second film material plies are aluminium nitride；And/or
The third film material plies are silicon dioxide layer, and the piezoelectric layer is aln layer.
8. thin film bulk acoustic wave resonator preparation method according to claim 7, which is characterized in that preparation method further include
Form the following step carried out after at least one third groove of the piezoelectric layer:
The graphical passivation layer, forms the first via hole for running through the passivation layer, and formed and powered in first via hole
Pole lead-out wire, the top electrode lead-out wire are electrically connected with the top electrode；
The graphical piezoelectric layer, forms the second via hole for running through the piezoelectric layer, and electric under formation in second via hole
Pole lead-out wire, the lower electrode outlet line are electrically connected with the lower electrode.
9. thin film bulk acoustic wave resonator preparation method according to claim 8, which is characterized in that preparation method further includes figure
Piezoelectric layer described in shape forms the second via hole for running through the piezoelectric layer, and electrode is drawn under formation in second via hole
The following step carried out after line:
Release channel is formed, the release channel sequentially passes through the piezo-electric stack structure and extends to be connected with first groove
It is logical；
XeF is provided into the release channel2Etching gas etches between the piezo-electric stack structure and first groove
Silicon structural layer, so that first groove and the piezo-electric stack fabric connectivity.
10. a kind of thin film bulk acoustic wave resonator, which is characterized in that method according to claims 1 to 9 prepares to be formed.
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