CN110307919B - High-sensitivity wide-range capacitive force sensor and preparation method thereof - Google Patents
High-sensitivity wide-range capacitive force sensor and preparation method thereof Download PDFInfo
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- CN110307919B CN110307919B CN201910701969.4A CN201910701969A CN110307919B CN 110307919 B CN110307919 B CN 110307919B CN 201910701969 A CN201910701969 A CN 201910701969A CN 110307919 B CN110307919 B CN 110307919B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
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Abstract
The invention discloses a high-sensitivity wide-range capacitive force sensor and a preparation method thereof, and belongs to the technical field of sensors. The high-sensitivity wide-range capacitive force sensor comprises a silicon substrate and a glass lining plate which are bonded, wherein the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron silicon film and a first silicon film upper electrode are sequentially formed on the surface of the upper silicon film; a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron silicon film is covered on the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second boron silicon film and a second silicon film upper electrode are sequentially formed on the surface of the second boron silicon film; the high-sensitivity wide-range capacitive force sensor also comprises a substrate electrode which is positioned on the top surface of the glass lining plate.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a high-sensitivity wide-range capacitive force sensor and a preparation method thereof.
Background
The force sensor is widely applied to life and industry, and is widely applied to various industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, aerospace, military industry, electric power, machine tools and the like. The types of force sensors are rich, and common force sensors comprise capacitive force sensors, resistance strain gauge force sensors, piezoelectric force sensors, resonant force sensors and the like. The capacitive force sensor has the advantages of simple structure, good temperature stability, low price, high sensitivity and strong overload capacity. With the progress and development of technology, the requirements on the force sensor are higher and higher, and the volume requirements are smaller and the sensitivity is higher.
Disclosure of Invention
The invention aims to provide a high-sensitivity wide-range capacitive force sensor and a preparation method thereof, so as to realize a force sensor with small volume, high sensitivity and wide range.
In order to solve the technical problems, the invention provides a high-sensitivity wide-range capacitive force sensor, which comprises a silicon substrate and a glass lining plate which are bonded,
the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron silicon film and a first silicon film upper electrode are sequentially formed on the surface of the upper silicon film;
a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron silicon film is covered on the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second silicon film upper electrode is formed on the surface of the second boron silicon film;
the high-sensitivity wide-range capacitive force sensor also comprises a substrate electrode which is positioned on the top surface of the glass lining plate.
Optionally, the substrate electrode is located at a center position of the glass liner plate.
Optionally, the first portion of the substrate electrode and the first borosilicate film form a first parallel plate capacitance, and the second portion and the second borosilicate film form a second parallel plate capacitance.
Optionally, one end of the lower silicon cantilever is connected with the silicon substrate, and the other end of the lower silicon cantilever is suspended; the upper surface of the lower silicon cantilever is flush with the silicon substrate.
Optionally, one end of the upper silicon film is suspended, and the other end is connected with the silicon substrate through the medium.
Optionally, the upper silicon film is higher than the lower silicon cantilever, and the upper silicon film can contact the lower silicon cantilever when bending downwards.
Optionally, the thickness of the upper silicon film is smaller than the thickness of the lower silicon cantilever.
The invention also provides a preparation method of the high-sensitivity wide-range capacitive force sensor, which comprises the following steps:
providing a silicon wafer, removing a part of silicon film layer and a corresponding silicon oxide intermediate layer on the surface of the silicon wafer, forming an upper silicon film and exposing a part of silicon substrate;
performing concentrated boron diffusion on the surfaces of the upper silicon film and the exposed part of the silicon substrate to form a first boron silicon film and a second boron silicon film;
photoetching to form an upper electrode pattern, and forming a first silicon film upper electrode and a second silicon film upper electrode;
etching the back surface of the silicon substrate by a certain thickness, performing back surface photoetching to form a lower silicon cantilever, and separating and releasing the upper silicon film and the lower silicon cantilever from the back surface by adopting hydrofluoric acid wet etching;
providing a glass lining plate, and sputtering a layer of chrome gold on the glass lining plate to serve as a substrate electrode;
and bonding the processed silicon chip and the glass lining plate to form the high-sensitivity wide-range capacitive force sensor.
Optionally, the substrate of the silicon wafer is 100 crystal directions.
Optionally, magnetron sputtering electrode metal aluminum is adopted to form the first silicon film upper electrode and the second silicon film upper electrode.
The invention provides a high-sensitivity wide-range capacitive force sensor and a preparation method thereof, wherein the high-sensitivity wide-range capacitive force sensor comprises a silicon substrate and a glass lining plate which are bonded, and the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron silicon film and a first silicon film upper electrode are sequentially formed on the surface of the upper silicon film; a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron silicon film is covered on the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second silicon film upper electrode is formed on the surface of the second boron silicon film; the high-sensitivity wide-range capacitive force sensor also comprises a substrate electrode which is positioned on the top surface of the glass lining plate.
The invention has the following beneficial effects:
the force sensitive beams with two different sensitivities are utilized, the upper silicon film force sensitive beam is thinner and more sensitive to force, so that the force sensor is more sensitive in small force, the lower silicon cantilever beam is thicker and less sensitive to force, can bear larger force, and the measuring range of the force sensor is increased;
the lower silicon cantilever beam plays a role in supporting the upper silicon film to a certain extent and protecting the upper silicon film, so that the sensor is more reliable;
the magnitude of the two capacitance values is utilized to reflect the magnitude of the force, so that the requirement on a peripheral measurement circuit is low, and the method is simple and reliable; can be processed by adopting a silicon micromachining technology, and has reliable process, easy batch manufacturing and low cost.
Drawings
FIG. 1 is a schematic diagram of a high sensitivity wide range capacitive force sensor provided by the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a high-sensitivity wide-range capacitive force sensor provided by the invention;
FIG. 3 is a schematic diagram of a structure providing a silicon wafer;
FIG. 4 is a schematic illustration of a portion of a silicon thin film layer and corresponding silicon oxide intermediate layer over a silicon wafer;
FIG. 5 is a schematic illustration of forming a first boron silicon film and a second boron silicon film;
FIG. 6 is a schematic illustration of forming a first silicon upper film electrode and a second silicon upper film electrode;
FIG. 7 is a schematic illustration of etching a thickness on the back side of a silicon substrate;
FIG. 8 is a schematic diagram of the release of the upper silicon membrane and the lower silicon cantilever;
fig. 9 is a schematic illustration of forming a substrate electrode on a glass liner.
Detailed Description
The invention provides a high-sensitivity wide-range capacitive force sensor and a preparation method thereof, and the high-sensitivity wide-range capacitive force sensor and the preparation method thereof are described in further detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
Example 1
The invention provides a high-sensitivity wide-range capacitive force sensor, and the structure of the high-sensitivity wide-range capacitive force sensor is shown in figure 1. The high-sensitivity wide-range capacitive force sensor comprises a silicon substrate 1 and a glass lining plate 2 which are bonded; wherein, the first end of the silicon substrate 1 is connected with an upper silicon film 3 through a medium 8; a first boron silicon film 51 and a first silicon film upper electrode 61 are sequentially formed on the surface of the upper silicon film 3; a second end of the silicon substrate 1 is provided with a lower silicon cantilever beam 4, and the second end of the silicon substrate 1 and the upper surface of the lower silicon cantilever beam 4 are covered with a second boron silicon film 52; the second borosilicate film 52 and the second upper silicon film electrode 62 are sequentially formed on the surface of the second borosilicate film 52. Further, the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode 7, wherein the substrate electrode 7 is positioned on the top surface of the glass lining plate 2 and positioned at the center position of the glass lining plate 2, namely the center position of the substrate electrode 7 is overlapped with the center position of the glass lining plate 2. The first portion of the substrate electrode 7 and the first borosilicate film 51 form a first parallel plate capacitor, the second portion and the second borosilicate film 52 form a second parallel plate capacitor, and the capacitance values of the two capacitors can reflect the stress of the sensor.
Specifically, one end of the lower silicon cantilever beam 4 is connected with the silicon substrate 1, and the other end is suspended; the upper surface of which is flush with the silicon substrate 1. One end of the upper silicon film 3 is suspended, and the other end is connected with the silicon substrate 1 through the medium 8. The upper silicon film 3 is higher than the lower silicon cantilever 4, and has a gap with a certain distance from the upper surface of the lower silicon cantilever 4, and the upper silicon film 3 can contact with the lower silicon cantilever 4 when being bent downwards. The thickness of the upper silicon thin film 3 is much thinner than that of the lower silicon cantilever 4, and has higher sensitivity to force.
Referring to fig. 1, the right half of the substrate electrode 7 and the first borosilicate film 51 constitute a first parallel plate capacitance, and the left half and the second borosilicate film 52 constitute a second parallel plate capacitance. When a small force is applied to the sensor, the upper silicon film 3 is deformed first, the distance between the first boron silicon film 51 and the substrate electrode 7 becomes smaller, the first parallel plate capacitance becomes larger, the upper silicon film 3 does not contact the lower silicon cantilever 4, and the second parallel plate capacitance is unchanged. When the applied force continues to increase, the deformation of the upper silicon film 3 increases, the first parallel plate capacitance increases more and more, the upper silicon film 3 contacts the lower silicon cantilever 4, when the applied force is sufficiently large, the upper silicon film 3 causes the lower silicon cantilever 4 to deform, the distance between the second boron silicon film 52 and the substrate electrode 7 decreases, and the second parallel plate capacitance increases. Therefore, the magnitude of the stress of the sensor can be measured according to the magnitude of the capacitance values of the first parallel plate and the second parallel plate of the sensor capacitance, and the sensor has the characteristics of high sensitivity and wide range.
The high-sensitivity wide-range capacitive force sensor provided by the invention utilizes two capacitors to reflect the force. The sensor is provided with two force sensitive beams with different force sensitivities, when smaller force is applied to the sensor, the upper silicon film is deformed firstly but cannot contact the lower silicon cantilever beam, the capacitance value of the first capacitor is changed, and the capacitance value of the second capacitor is kept unchanged; when the applied force is continuously increased, the deformation of the upper silicon film is larger and larger, the capacitance value of the first capacitor is larger and larger, and when the applied force is large enough, the upper silicon film can contact the lower silicon cantilever beam, and when the lower silicon cantilever beam is deformed, the capacitance value of the second capacitor is also changed. Therefore, the sensor can measure smaller force and higher sensitivity, and can also measure larger force, and has wider measuring range.
Example two
The invention provides a preparation method of a high-sensitivity wide-range capacitive force sensor, a flow diagram is shown in fig. 2, and the preparation method comprises the following steps:
step S21, providing a silicon wafer, removing a part of silicon film layer and a corresponding silicon oxide intermediate layer on the surface of the silicon wafer to form an upper silicon film and expose a part of silicon substrate;
s22, performing concentrated boron diffusion on the surfaces of the upper silicon film and the exposed part of the silicon substrate to form a first boron silicon film and a second boron silicon film;
step S23, photoetching to form an upper electrode pattern, and forming a first silicon film upper electrode and a second silicon film upper electrode;
step S24, etching a certain thickness from the back of the silicon substrate, performing back photoetching to form a lower silicon cantilever, and separating and releasing the upper silicon film and the lower silicon cantilever from the back by adopting hydrofluoric acid wet etching;
step S25, providing a glass lining plate, and sputtering a layer of chrome gold on the glass lining plate to serve as a substrate electrode;
and step S26, bonding the processed silicon wafer and the glass lining plate to form the high-sensitivity wide-range capacitive force sensor.
Firstly, providing a silicon wafer with a substrate of 100 crystal directions as shown in fig. 3, removing a part of silicon film layers and corresponding silicon oxide intermediate layers 8 (namely media) above the silicon wafer by a reactive ion etching process to form an upper silicon film 3 and expose a silicon substrate 1 of a lower part as shown in fig. 4;
then, as shown in fig. 5, a first boron silicon film 51 and a second boron silicon film 52 are formed by performing boron concentration diffusion on the surface of the upper silicon thin film 3 and the upper surface of the exposed portion of the silicon substrate 1 (the left side of the silicon substrate 1 in the drawing);
then, forming an upper electrode pattern by photolithography, and forming a first silicon film upper electrode 61 and a second silicon film upper electrode 62 by magnetron sputtering of electrode metal aluminum; referring to fig. 6, the first silicon film upper electrode 61 is formed on the first boron silicon film 51, and the second silicon film upper electrode 62 is formed on the second boron silicon film 52;
etching the back surface of the silicon substrate 1 by adopting tetramethyl ammonium hydroxide to a certain thickness, as shown in fig. 7, performing back surface photoetching to form a lower silicon cantilever 4, protecting the front surface by using glue, and separating and releasing the upper silicon film 3 and the lower silicon cantilever 4 from the back surface by adopting hydrofluoric acid wet etching, as shown in fig. 8;
selecting a glass lining plate 2, performing standard cleaning, and sputtering a layer of chrome gold on the glass lining plate 2 as a substrate electrode 7, as shown in fig. 9;
finally, a silicon-glass bonding process is used to bond the processed silicon wafer shown in fig. 8 and the processed glass lining plate 2 shown in fig. 9 to form the sensor shown in fig. 1.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (6)
1. A high-sensitivity wide-range capacitive force sensor comprises a silicon substrate (1) and a glass lining plate (2) which are bonded, and is characterized in that,
the first end of the silicon substrate (1) is connected with an upper silicon film (3) through a medium (8); a first boron silicon film (51) and a first silicon film upper electrode (61) are sequentially formed on the surface of the upper silicon film (3);
a lower silicon cantilever beam (4) is formed at the second end of the silicon substrate (1), and a second boron silicon film (52) is covered on the second end of the silicon substrate (1) and the upper surface of the lower silicon cantilever beam (4); a second silicon film upper electrode (62) is formed on the surface of the second boron silicon film (52);
the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode (7) which is positioned on the top surface of the glass lining plate (2);
a first part of the substrate electrode (7) and the first boron silicon film (51) form a first parallel plate capacitor, and a second part and the second boron silicon film (52) form a second parallel plate capacitor;
one end of the lower silicon cantilever beam (4) is connected with the silicon substrate (1), and the other end is suspended; the upper surface of the lower silicon cantilever beam (4) is flush with the silicon substrate (1);
one end of the upper silicon film (3) is suspended, and the other end is connected with the silicon substrate (1) through the medium (8);
the upper silicon film (3) is higher than the lower silicon cantilever (4), and the upper silicon film (3) can contact the lower silicon cantilever (4) when being bent downwards.
2. A high sensitivity wide range capacitive force sensor according to claim 1, characterized in that the substrate electrode (7) is located in the central position of the glass backing plate (2).
3. A high sensitivity wide range capacitive force sensor as claimed in claim 1, characterized in that the thickness of the upper silicon membrane (3) is smaller than the thickness of the lower silicon cantilever (4).
4. A method for manufacturing a high sensitivity wide range capacitive force sensor based on the method of claim 1, comprising the steps of:
providing a silicon wafer, removing a part of silicon film layer and a corresponding silicon oxide intermediate layer on the surface of the silicon wafer, forming an upper silicon film and exposing a part of silicon substrate;
performing concentrated boron diffusion on the surfaces of the upper silicon film and the exposed part of the silicon substrate to form a first boron silicon film and a second boron silicon film;
photoetching to form an upper electrode pattern, and forming a first silicon film upper electrode and a second silicon film upper electrode;
etching the back surface of the silicon substrate by a certain thickness, performing back surface photoetching to form a lower silicon cantilever, and separating and releasing the upper silicon film and the lower silicon cantilever from the back surface by adopting hydrofluoric acid wet etching;
providing a glass lining plate, and sputtering a layer of chrome gold on the glass lining plate to serve as a substrate electrode;
and bonding the processed silicon chip and the glass lining plate to form the high-sensitivity wide-range capacitive force sensor.
5. The method of claim 4, wherein the substrate of the silicon wafer has a crystal orientation of 100.
6. The method of manufacturing a high sensitivity wide range capacitive force sensor of claim 4, wherein the first silicon upper film electrode and the second silicon upper film electrode are formed using magnetron sputtering electrode metal aluminum.
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