CN110296663B - Method for calculating thickness of all-band ultralow-reflection surface film layer - Google Patents
Method for calculating thickness of all-band ultralow-reflection surface film layer Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 21
- 238000004364 calculation method Methods 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000035699 permeability Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910002974 CaO–SiO2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
本发明公开了一种全波段超低反射表面膜层厚度计算方法，用于计算物质表面超低反射膜层的最佳厚度。本发明得到最佳超低反射表面膜层厚度dmin，相邻物质折射率n1、n2以及入射光实现超低反射的最大波长λmax的对应关系，即
The invention discloses a method for calculating the thickness of a full-wavelength ultra-low reflection surface film layer, which is used for calculating the optimum thickness of the ultra-low reflection film layer on the material surface. The present invention obtains the optimal ultra-low reflection surface film thickness d min , the corresponding relationship between the refractive indices n 1 , n 2 of adjacent substances and the maximum wavelength λ max of the incident light to achieve ultra-low reflection, namely,
Description
Technical Field
The invention relates to a method for determining a theoretical value of the thickness of an ultralow-reflection film on a substance surface, belonging to the field of preparation technology and application of clean energy materials and optical materials.
Background
With the development of society and economy, the problems of realizing efficient utilization of solar energy, improving optical information processing efficiency, reducing light pollution on surfaces of metal, glass, ceramic and the like, reducing light reflection of screens and the like become important research subjects all over the world. The surface of the reflecting material can reduce the reflection of light and increase the transmittance of light by preparing an ultralow reflecting film. At present, the preparation methods of the ultra-low reflection film are many, and mainly comprise a magnetron sputtering method, a sol-gel dip coating method, a vacuum evaporation method, an etching method and the like. In the existing preparation method, as the corrosion method has the advantages of controllable reaction conditions, simple equipment requirements, easy realization of batch production, environmental protection and the like, people are more and more concerned (Liqiang Liu, Broad band and Omnidirectional, New arly zero reflective photo polymeric Glass, adv.Mater.2012,24, 6318-.
Experimental results show that when the ultra-low reflection film layer reaches or exceeds a certain thickness, a good ultra-low reflection effect can be achieved. For the ultra-low reflection film layer, the antireflection effect of the film with a thinner thickness is not ideal, and the manufacturing cost of the film with a thicker thickness is increased. Therefore, the determination of the thickness of the optimal antireflection film layer has important research significance and practical value. However, there is no theoretical determination method for the thickness of the ultra-low reflection film between different interfaces. To obtain the optimal thickness of the reflective film, the thickness of the ultra-low reflective film is gradually increased in a laboratory, and the optimal thickness of the reflective film is determined through practical tests. Therefore, the method for calculating the thickness of the all-band ultralow-reflection surface film layer is of great significance.
Disclosure of Invention
Aiming at the situation that the existing method for calculating the thickness of the ultralow reflection film with the interface gradient refractive index has theoretical deficiency, the invention provides a method for calculating the thickness of the full-wave-band ultralow reflection surface film, which is used for calculating the optimal thickness of the ultralow reflection film on the surface of a substance. The invention obtains the optimal thickness d of the ultralow reflection film layerminRefractive index n of adjacent substance1、n2And maximum wavelength λ of incident lightmaxThe corresponding relationship of (1). The theoretical calculation method for the thickness of the ultralow-reflection surface film layer can perfectly correspond to experimental tests, and has important guiding significance for determining the thickness of the ultralow-reflection surface film layer on the surface of a substance.
The invention relates to a method for calculating the thickness of a full-wave band ultra-low reflection surface film layer, which is characterized in that,
when the refractive index of the material surface ultra-low reflection film is continuously changed between the medium 1 and the medium 2, the optimal ultra-low reflection surface film layer thickness d for realizing ultra-low reflection of incident light between the medium 1 and the medium 2minComprises the following steps:
wherein λ ismaxMaximum wavelength, n, for achieving ultra-low reflection of incident light1And n2Respectively, the refractive indices of incident light through the adjacent substance medium 1 and medium 2.
The medium 1 may be a gas, a liquid or a non-metallic solid, and the medium 2 may be a gas, a liquid or a non-metallic solid.
The expression for the thickness of the optimal ultra-low reflection film layer includes, in addition to the equality relationship ═ further: other expressions or other forms such as the number greater than or equal to "≧" of the formula:
n is above1Corresponding to the refractive index, n, of the medium 12Corresponding to the refractive index of the medium 2, n when the medium changes1And n2The values are different.
Lambda of abovemaxThe maximum wavelength for realizing ultralow reflection of incident light can be arbitrarily selected.
The method for calculating the thickness of the ultra-low reflection film on the surface of the substance is suitable for calculating the thickness of the antireflection film on interfaces of gas-solid, liquid-solid, solid-solid and the like, and is particularly suitable for calculating the thickness of the surface film of the ultra-low reflection glass. The calculation formula of the invention has no correlation with the preparation method of the surface film layer (such as acid-base corrosion, vacuum evaporation method and the like), and the surface film with the refractive index continuously changed between the medium 1 and the medium 2 can be used. The results of the computational simulation and the experimental matching analysis are shown in fig. 1-2. The method finally obtains the thickness d of the ultralow-reflection film layer on the surface of the substance through theoretical calculationminRefractive index n of adjacent substance1、n2The corresponding relationship of (1). The calculation formula is simple and practical, and theoretical guidance can be provided for actual production of the ultralow-reflection film.
Drawings
FIG. 1 is a schematic view of an antireflection film layer structure obtained by a calculation formula of the thickness of a full-wave-band ultra-low reflection surface film layer according to the present invention;
FIG. 2 is a comparison of the effect of the thickness of the ultra-low reflection film calculated by the theory of the present invention and the actual thickness of the ultra-low reflection film on the reflectivity.
Detailed Description
Example 1:
the invention relates a light reflection coefficient calculation formula with constants such as dielectric constant epsilon and magnetic permeability mu of different substances through Maxwell equations corresponding to antireflection films among different interfaces, and applies an impedance Z (x) formula of light entering a medium 2 from a medium 1 to the interface antireflection filmFinally obtaining the optimal thickness d of the film layer on the ultra-low reflection surfaceminRefractive index n with adjacent substance1、n2The corresponding relationship of (1).
Wherein λ ismaxMaximum wavelength, n, for achieving ultra-low reflection of incident light1And n2Respectively, the refractive indices of incident light through the adjacent substance medium 1 and medium 2.
With air and Na2O-CaO-SiO2The system ultra-white glass is used as an interface model to calculate as follows:
(1) with air and Na2O-CaO-SiO2System ultra-white glass as interface model, n1＝1，n2Sleeving the ultra-low reflection film layer into a calculation formula of the ultra-low reflection film layer to obtain the thickness of the ultra-low reflection film layer on the surface of the ultra-white glass and the maximum wavelength lambda for realizing ultra-low reflection of incident lightmaxThe corresponding relation is as follows:
(2) maximum wavelength lambda for achieving ultra-low reflection of incident lightmaxWhen the thickness is 600nm, the thickness of the ultra-low reflection film layer is as follows:
the schematic structural diagram of the ultra-low reflection film layer on the surface of the ultra-white glass of the embodiment is shown in fig. 1. It can be seen from the figure that the ultra-low reflection film layer is located at the interface of the two substances, and the thickness of the ultra-low reflection film layer can be related to the refractive indexes of the two substances, the wavelength of incident light and other properties through a thickness calculation formula of the ultra-low reflection film layer.
The obtained reflectance corresponding relationship between the thickness of the ultra-low reflection film (0 nm, 360nm and 800nm respectively) and the actual thickness of the ultra-low reflection film (0 nm, 360nm and 800nm respectively) of the ultra-white glass is shown in fig. 2 by adopting the method for calculating the thickness of the all-band ultra-low reflection surface film. As can be seen from the figure, the calculation method proposed in this embodiment can be consistent with the actual situation.
The method for calculating the thickness of the full-wave-band ultralow-reflection surface film layer can provide theoretical guidance for research and preparation of the ultralow-reflection film layer.
Example 2
(1) With air-Ge20Sb12Se68The chalcogenide glass is an interface model, and the refractive index of the glass is 2.588. Obtaining the maximum wavelength corresponding relation between the thickness of the ultralow reflection film layer on the surface of the chalcogenide glass and the ultralow reflection of the incident light:
(2) maximum wavelength lambda for achieving ultra-low reflection of incident lightmaxThe thickness of the ultra-low reflection film layer is as follows when the thickness is 5000 nm:
example 3
(1) The air-Si is taken as an interface model, and the refractive index of Si is n-4. Obtaining the maximum wavelength corresponding relation between the thickness of the Si surface ultralow reflection film layer and the ultralow reflection of the incident light:
(2) maximum wavelength lambda for achieving ultra-low reflection of incident lightmaxWhen the thickness is 1200nm, the thickness of the ultra-low reflection film layer is as follows:
example 4
(1) The refractive index of the silica glass is 1.2 with air-silica glass as an interface model. Obtaining the corresponding relation between the thickness of the ultralow reflection film layer on the surface of the quartz glass and the maximum wavelength of the incident light for realizing ultralow reflection:
(2) maximum wavelength lambda for achieving ultra-low reflection of incident lightmaxWhen the thickness is 300nm, the thickness of the ultra-low reflection film layer is as follows:
example 5
As described in example 1, except that: the interface model in the step (1) is a water-glass interface.
Example 6
As described in example 1, except that: the interface model in step (1) is a benzene-glass interface.
Example 7
As described in example 1, except that: the interface model in step (1) is a glycerol-glass interface.
Example 8
As described in example 1, except that: the interface model in step (1) is an ethanol-glass interface.
Example 9
As described in example 1, except that: the interface model in step (1) is a glass-glass interface.
Example 10
As described in example 1, except that: the interface model in step (1) is a glass-ceramic interface.
Example 11
As described in example 1, except that: the expression of the thickness of the antireflection film layer in the step (1) is as follows:
d≥202.4nm。
Claims (2)
1. A method for calculating the thickness of a full-wave band ultra-low reflection surface film layer is characterized in that,
the reflection coefficient calculation formula of light is connected with the dielectric constant epsilon and the magnetic permeability mu constant of different substances through Maxwell equations corresponding to the antireflection film layers among different interfaces, and the impedance Z (x) formula of the light entering the medium 2 from the medium 1 is applied to the interface antireflection film layers to obtain the optimal ultralow reflection surface film layer thickness dminRefractive index n with adjacent substance1、n2The corresponding relationship of (a);
when the refractive index of the ultralow-reflection film on the surface of the substance is continuously changed between the medium 1 and the medium 2, the optimal ultralow-reflection surface film layer thickness d for realizing ultralow reflection of sunlight between the medium 1 and the medium 2minComprises the following steps:
wherein λ ismaxMaximum wavelength, n, for achieving ultra-low reflection of incident light1And n2The refractive indices of incident light through the adjacent substance medium 1 and medium 2, respectively;
wherein medium 1 is a gas, a liquid or a non-metallic solid, and medium 2 is a gas, a liquid or a non-metallic solid; when the medium is changed, n1And n2The values are different.
2. A method for calculating the thickness of a full-wave band ultra-low reflection surface film layer is characterized in that,
the method comprises the steps of associating a light reflection coefficient calculation formula with dielectric constants epsilon and magnetic permeability mu constants of different substances through Maxwell equations corresponding to antireflection film layers among different interfaces, applying an impedance Z (x) formula of light entering a medium 2 from a medium 1 to the interface antireflection film layer, and obtaining the thickness d and phase of the ultralow-reflection surface film layerRefractive index n of adjacent substance1、n2The corresponding relationship of (a);
when the refractive index of the material surface ultra-low reflection film is continuously changed between the medium 1 and the medium 2, the thickness d of the ultra-low reflection surface film layer for realizing the ultra-low reflection of sunlight between the medium 1 and the medium 2 is as follows:
wherein λ ismaxMaximum wavelength, n, for achieving ultra-low reflection of incident light1And n2The refractive indices of incident light through the adjacent substance medium 1 and medium 2, respectively;
wherein medium 1 is a gas, a liquid or a non-metallic solid, and medium 2 is a gas, a liquid or a non-metallic solid; when the medium is changed, n1And n2The values are different.
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| CN102320164A (en) * | 2011-08-15 | 2012-01-18 | 西北核技术研究所 | Multilayer medium high-reflecting film for variable angle laser incidence |
| CN103196865A (en) * | 2013-03-13 | 2013-07-10 | 清华大学 | Method for simultaneously measuring thickness and refractive index of birefringent element |
| CN103487404A (en) * | 2013-09-30 | 2014-01-01 | 苏州阿特斯阳光电力科技有限公司 | Test method for refractive index of solar cell antireflection film |
| CN105157585A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Standard interference piece fitting method capable of acquiring film thickness and refractivity simultaneously |
| WO2018221923A1 (en) * | 2017-05-31 | 2018-12-06 | (주)아모레퍼시픽 | Cosmetic material thickness measuring device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102877049B (en) * | 2012-10-17 | 2014-08-06 | 山东建筑大学 | Preparation method of co-doped transparent conductive thin film |
| CN103744132B (en) * | 2014-01-28 | 2017-01-04 | 张家港康得新光电材料有限公司 | A kind of antireflection structure and antireflective film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102320164A (en) * | 2011-08-15 | 2012-01-18 | 西北核技术研究所 | Multilayer medium high-reflecting film for variable angle laser incidence |
| CN103196865A (en) * | 2013-03-13 | 2013-07-10 | 清华大学 | Method for simultaneously measuring thickness and refractive index of birefringent element |
| CN103487404A (en) * | 2013-09-30 | 2014-01-01 | 苏州阿特斯阳光电力科技有限公司 | Test method for refractive index of solar cell antireflection film |
| CN105157585A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Standard interference piece fitting method capable of acquiring film thickness and refractivity simultaneously |
| WO2018221923A1 (en) * | 2017-05-31 | 2018-12-06 | (주)아모레퍼시픽 | Cosmetic material thickness measuring device and method |
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