CN110289240A - Bulk transfer head and transfer method for electronic components - Google Patents

Abstract

The invention discloses a mass transfer head and a transfer method for electronic components, and relates to the technical field of production of electronic components. In this case, the center-to-center distance between any two adjacent electronic component pick-up heads is equal; the memory alloy substrate deforms with the change of temperature. When the temperature rises, the memory alloy substrate stretches, and any two adjacent electronic component pick-up heads The center-to-center distance becomes larger; when the temperature decreases, the memory alloy substrate shrinks, and the center-to-center distance between any two adjacent electronic component pick-up heads becomes smaller. By adjusting the temperature, the distance between the fixed electronic component pick-up heads on the memory alloy substrate can be adjusted, which is flexibly applicable to different Micro-LED pitches and pixel pitches, effectively avoiding the waste of Micro-LED resources.

Description

Electronic component mass transfer head and transfer method

technical field

The invention relates to the technical field of electronic component production, and more specifically, to a mass transfer head and a transfer method for electronic components.

Background technique

Micro-LED is a display technology that miniaturizes and matrixes the LED structure, and individually drives and addresses each pixel. Since the brightness, life, contrast, response time, energy consumption, viewing angle and resolution of Micro-LED technology are superior to LCD and OLED technology, it is regarded as a new generation that can surpass OLED and traditional Micro-LED. display technology. However, due to the extremely high efficiency in the packaging process, the 99.9999% yield rate and the need for transfer accuracy within plus or minus 0.5 μm, the size of Micro-LED components is basically less than 50 μm and the number is tens of thousands to several million. A core technical problem that still needs to be overcome in the process of LED industrialization is the mass transfer technology of Micro-LED components.

In the prior art, after the growth of the Micro-LED on the growth substrate is completed, it will be cut into a plurality of Micro-LED elements arranged periodically. The entire surface of Micro-LED components is transferred to the transfer substrate in batches, and finally the Micro-LED components on the transfer substrate are transferred to the array substrate by using the pick-up head, thus realizing the process of transferring Micro-LEDs to the array substrate. Usually, one pick-up head corresponds to pick up a Micro-LED, the pitch of the pick-up head (that is, the distance between two adjacent pick-up heads) is fixed, and the pitch of the pick-up head is consistent with the pixel pitch of the display pixel on the display panel. However, the Micro-LED pitch on the growth substrate and the transfer substrate is different from the pixel pitch of the display pixel. Usually, the Micro-LED pitch=pixel pitch/n (n is an integer greater than 1), so the pickup head can pick up the Micro-LED pitch on the transfer substrate. -LEDs, only part of the Micro-LEDs on the transfer substrate can be picked up, and the rest of the Micro-LEDs will be wasted, resulting in a waste of LED resources.

Contents of the invention

In view of this, the present invention provides a mass transfer head and transfer method for electronic components. By adjusting the temperature, the distance between the pick-up heads of electronic components fixed on the memory alloy substrate can be adjusted, which is flexibly applicable to different Micro-LED pitches. and pixel pitch, effectively avoiding the waste of Micro-LED resources.

In the first aspect, the present application provides a mass transfer head for electronic components, including: a memory alloy substrate and a plurality of electronic component pick-up heads fixed on the first surface of the memory alloy substrate; at the same temperature, any two adjacent The center-to-center distances between the electronic component pickup heads are equal;

The memory alloy substrate deforms as the temperature changes, and when the temperature rises, the memory alloy substrate stretches, and the center-to-center distance between any two adjacent electronic component pick-up heads becomes larger; when the temperature decreases , the memory alloy substrate shrinks, and the center-to-center distance between any two adjacent electronic component pick-up heads becomes smaller.

In the second aspect, the present application provides a mass transfer method of electronic components based on the mass transfer head of electronic components, including:

Slowly increase the temperature in the initial state of normal temperature, so that the memory alloy substrate in the electronic component mass transfer head is stretched, and the temperature is controlled at T1, so that the center distance D1 between any two adjacent electronic component pick-up heads is equal to The center-to-center distance D0 between any two adjacent electronic components on the transfer substrate is equal;

Maintaining the temperature T1, moving the electronic component mass transfer head to the side of the transfer substrate facing the electronic component, so that the electronic component pick-up head and the electronic component are located between the memory alloy substrate and the transfer substrate. between the substrates, so that the electronic component transfer head is located directly above the electronic component;

Maintaining the temperature T1, moving the electronic component mass transfer head towards the electronic component, using the electronic component pickup head to pick up the electronic component, and detaching the electronic component from the transfer substrate;

Slowly increase the temperature so that the memory alloy substrate is stretched again, and control the temperature at T2, so that the center-to-center distance between any two adjacent electronic component pick-up heads carrying the electronic component increases to D2;

moving the electronic component mass transfer head carrying the electronic components directly above the array substrate, moving the electronic component mass transfer head toward the array substrate, and binding each of the electronic components to the On the array substrate, the electronic component is separated from the mass transfer head of the electronic component;

Lowering the temperature causes the memory alloy substrate in the mass transfer head of electronic components to shrink.

Compared with the prior art, the electronic component mass transfer head and transfer method provided by the present invention at least achieve the following beneficial effects:

In the electronic component mass transfer head and transfer method provided by the present application, a memory alloy substrate and a plurality of electronic component pick-up heads fixed on the first surface of the memory alloy substrate are introduced into the transfer head, and the memory alloy substrate can change with temperature. Change and deformation, when the temperature rises, the memory alloy substrate will stretch, making the center distance between the electronic component pick-up heads larger; when the temperature is lowered, the memory alloy substrate will shrink, making the electronic component pick-up heads The center distance becomes smaller. In this way, by adjusting the temperature, the distance between the fixed electronic component pick-up heads on the memory alloy substrate can be adjusted, which is flexibly applicable to different Micro-LED pitches and pixel pitches, effectively avoiding the waste of Micro-LED resources.

Of course, any product implementing the present invention does not necessarily need to achieve all the above-mentioned technical effects at the same time.

Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings.

Description of drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.

FIG. 1 is a top view of a mass transfer head for electronic components provided by an embodiment of the present application;

Fig. 2 shows a kind of AA' sectional view of the mass transfer head of electronic components provided in Fig. 1;

Fig. 3 shows a kind of correspondence diagram of temperature and deformation when TiNi alloy is used as memory alloy substrate;

Fig. 4 shows another kind of AA' sectional view of the mass transfer head of electronic components provided in Fig. 1;

Fig. 5 shows another kind of AA' sectional view of the mass transfer head of electronic components provided in Fig. 1;

FIG. 6 is a flow chart of a mass transfer method for electronic components provided by an embodiment of the present application;

Figure 7 shows a schematic diagram of the memory alloy substrate after stretching;

FIG. 8 is a schematic structural view of an electronic component located on a transfer substrate;

Fig. 9 is a diagram showing a relative positional relationship between the mass transfer head of electronic components and the electronic components on the transfer substrate;

Fig. 10 shows a schematic structural view of picking up electronic components by an electronic component pick-up head;

Fig. 11 shows a schematic diagram of the structure after stretching the memory alloy substrate carrying the electronic components;

FIG. 12 is a schematic diagram of the structure of transferring electronic components to an array substrate.

Detailed ways

Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

In all examples shown and discussed herein, any specific values should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have different values.

It should be noted that like numerals and letters denote like items in the following figures, therefore, once an item is defined in one figure, it does not require further discussion in subsequent figures.

In the prior art, after the growth of the Micro-LED on the growth substrate is completed, it will be cut into a plurality of Micro-LED elements arranged periodically. The entire surface of Micro-LED components is transferred to the transfer substrate in batches, and finally the Micro-LED components on the transfer substrate are transferred to the array substrate by using the pick-up head, thus realizing the process of transferring Micro-LEDs to the array substrate. Usually, one pick-up head corresponds to pick up a Micro-LED, the pitch of the pick-up head (that is, the distance between two adjacent pick-up heads) is fixed, and the pitch of the pick-up head is consistent with the pixel pitch of the display pixel on the display panel. However, the Micro-LED pitch on the growth substrate and the transfer substrate is different from the pixel pitch of the display pixel. Usually, the Micro-LED pitch=pixel pitch/n (n is an integer greater than 1), so the pickup head can pick up the Micro-LED pitch on the transfer substrate. -LEDs, only part of the Micro-LEDs on the transfer substrate can be picked up, and the rest of the Micro-LEDs will be wasted, resulting in a waste of LED resources.

In view of this, the present invention provides a mass transfer head and transfer method for electronic components. By adjusting the temperature, the distance between the pick-up heads of electronic components fixed on the memory alloy substrate can be adjusted, which is flexibly applicable to different Micro-LED pitches. and pixel pitch, effectively avoiding the waste of Micro-LED resources.

The following will describe in detail with reference to the drawings and specific embodiments.

Figure 1 is a top view of the electronic component mass transfer head provided by the embodiment of the present application, and Figure 2 is a AA' cross-sectional view of the electronic component mass transfer head provided in Figure 1, please refer to the figure 1 and FIG. 2, the present application provides a mass transfer head 100 for electronic components, including: a memory alloy substrate 10 and a plurality of electronic component pick-up heads 20 fixed on the first surface of the memory alloy substrate 10; The center-to-center distance between two adjacent electronic component pick-up heads 20 is equal;

The memory alloy substrate 10 deforms with the change of temperature. When the temperature rises, the memory alloy substrate 10 stretches, and the center distance between any two adjacent electronic component pick-up heads 20 becomes larger; when the temperature decreases, the memory alloy substrate 10 stretches. The substrate 10 shrinks, and the center-to-center distance between any two adjacent electronic component pick-up heads 20 becomes smaller.

It should be noted that FIG. 1 only schematically shows the situation that a plurality of electronic component pick-up heads 20 are included on the electronic component mass transfer head 100, and FIG. A relative positional relationship of the base 10 does not represent the actual size and quantity. In addition, the electronic component pick-up head 20 can also be flexibly set according to the actual situation, and FIG. 1 and FIG. 2 are only schematic illustrations.

Specifically, please continue to refer to FIG. 1 and FIG. 2. In the electronic component mass transfer head 100 provided by the embodiment of the present application, a memory alloy substrate 10 and a plurality of electronic components fixed on the first surface of the memory alloy substrate 10 are introduced to pick up For the heads 20, at a certain fixed temperature, the center-to-center distance between any two adjacent electronic component pick-up heads 20 is equal and remains unchanged. In particular, the above-mentioned memory alloy substrate 10 can be deformed with the change of temperature. When the temperature rises, the memory alloy substrate 10 will be stretched, so that the center distance between the electronic component pick-up heads 20 becomes larger; when the temperature is lowered, The memory alloy substrate 10 will shrink, so that the center-to-center distance between the pick-up heads 20 for electronic components becomes smaller. For example, when using the electronic component mass transfer head 100 to transfer Micro-LEDs, the temperature can be kept at a certain temperature, and the memory alloy substrate 10 is stretched or shrunk, so that the center distance between the electronic component pick-up heads 20 and the The center-to-center distances between the Micro-LEDs on the transfer substrate 50 are kept equal, so that the electronic component pick-up head 20 can pick up the Micro-LEDs one by one without causing waste of Micro-LED resources on the transfer substrate 50 . When using the mass transfer head 100 for electronic components to transfer Micro-LEDs to the array substrate, the pick-up heads for adjacent electronic components on the transfer head 100 can be flexibly adjusted by adjusting the temperature according to the display pixel pitch on the array substrate The center-to-center distance of 20 keeps the two equal, so that the Micro-LEDs can be accurately transferred to the array substrate in batches. Therefore, this application adopts the transfer head 100 of the memory alloy substrate 10, which can be applied to the mass transfer of Micro-LEDs with different spacing requirements, and can be flexibly adjusted between the electronic component pick-up heads 20 fixed on the memory alloy substrate 10 by adjusting the temperature. The spacing can not only be applicable to different Micro-LED pitches and pixel pitches, but also can effectively avoid the waste of Micro-LED resources.

In the mass transfer head 100 for electronic components provided in the embodiment of the present application, the methods for picking up Micro-LEDs by the electronic energy pick-up head 20 include electrostatic force adsorption, van der Waals force adsorption, electromagnetic force adsorption, etc. A certain amount of Micro-LED is precisely adsorbed, then transferred to the target array substrate, and released precisely.

Optionally, in the electronic component mass transfer head 100 provided in the embodiment of the present application, the memory alloy substrate 10 includes Au-Cd, Ag-Cd, Cu-Zn, Cu-Zn-Al, Cu-Zn-Sn, Cu -Zn-Si, Cu-Sn, Cu-Zn-Ga, In-Ti, Au-Cu-Zn, NiAl, Fe-Pt, Ti-Ni, Ti-Ni-Pd, Ti-Nb, U-Nb and Fe - at least one of Mn-Si.

Specifically, when the memory alloy substrate 10 is formed by using one or a combination of several of the above materials, the memory alloy substrate 10 has a two-way memory effect, which restores the high-temperature phase shape when heated, and restores the low-temperature phase when cooled. Therefore, by controlling the temperature increase or decrease, the stretching or shrinkage of the memory alloy substrate 10 can be controlled, and then the increase or decrease of the center-to-center distance between the adjacent electronic component pickup heads 20 can be controlled, realizing the pickup head 20 The function of flexible adjustment of the center distance between them.

Taking Ti-Ni alloy as an example, its deformation is different at different temperatures. Figure 3 shows a corresponding relationship between temperature and deformation when TiNi alloy is used as the memory alloy substrate 10. When the temperature is 50°C , its deformation is 20%, and when the temperature rises to 200°C, its deformation is 80%. It should be noted that the amount of deformation in this application refers to the amount of dimensional change. If the initial length of the memory alloy substrate is 1 meter, the deformation of 20% means that its length has become 1.2 meters.

Optionally, in the mass transfer head 100 for electronic components provided in the embodiment of the present application, the thickness of the memory alloy substrate 10 is H, where m*10nm≤H≤n*10 ³ nm, where 1≤m≤10 , 1≤n≤10.

In the present application, the electronic component pick-up head 20 is fixed on the first surface of the memory alloy substrate 10, and the memory alloy substrate 10 also includes a second surface opposite to the first surface. The memory alloy substrate 10 mentioned in the embodiment of the present application Thickness H refers to the vertical distance between the first surface and the second surface. When m*10nm≤H≤n*10 ³ nm, 1≤m≤10, 1≤n≤10, it is equivalent to setting the thickness of the memory alloy substrate 10 in the present application to be between tens of nm and several microns. The memory alloy substrate 10 within a thickness range can sensitively perceive the change of the ambient temperature, thereby accurately driving the electronic component pick-up head 20 to stretch or shrink, and then adjust the center between the adjacent electronic component pick-up heads 20 pitch, so that it meets the pitch requirements of the captured Micro-LED and the pitch requirements between display pixels on the array substrate.

Optionally, in the electronic component mass transfer head 100 provided in the embodiment of the present application, the electronic component pick-up head 20 and the memory alloy substrate 10 are integrally formed using the same material.

Specifically, when the electronic component pick-up head 20 and the memory alloy base 10 in the present application are integrally molded using the same material, the memory alloy base 10 and the electronic component pick-up head 20 can be completed in the same manufacturing process, and there is no need for electronic components. The component pick-up head 20 is independently provided with a special production process, which is beneficial to simplify the production process of the electronic component mass transfer head 100 and improve production efficiency.

It should be noted that when a large amount of Micro-LEDs are transferred by electrostatic force adsorption, van der Waals force adsorption, electromagnetic force adsorption, etc., even if the electronic component pick-up head 20 and the memory alloy substrate 10 are made of the same material, During the process of temperature change, although the volume of the pick-up head 20 will also change, the magnitude of the volume change is small, and will not affect the adsorption between the pick-up head 20 of the electronic component and the Micro-LED adsorbed thereon Therefore, the Micro-LED will not fall off from the electronic component pick-up head 20 due to the volume change of the electronic component pick-up head 20, and the reliable transfer of the Micro-LED can still be achieved.

Of course, it is only a preferred embodiment that the memory alloy substrate 10 and the electronic component pick-up head 20 are integrally molded with the same material in this application. In some other embodiments of the application, the electronic component pick-up head 20 can also be combined with The memory alloy substrate 10 is made separately, and then the two are fixed. The material of the pick-up head 20 can also be different from that of the memory alloy substrate 10. It can be made of an elastic material with a certain degree of stretchability, or it can be made of other materials, such as metal materials, which are not specifically limited in this application.

Optionally, FIG. 4 is another AA' cross-sectional view of the mass transfer head 100 for electronic components provided in FIG. The elastic base 30 is located on the second surface of the memory alloy base 10;

The maximum deformation of the elastic substrate 30 is greater than or equal to the deformation of the memory alloy substrate 10 .

Specifically, as another embodiment of the present application, in the mass transfer head 100 for electronic components, an elastic substrate 30 is also provided on the side of the memory alloy substrate 10 away from the pick-up head 20 for electronic components. The existence of the elastic substrate 30 can Start a certain protective effect on the memory alloy substrate 10. In the actual production process, the memory alloy substrate 10 can be evaporated on the elastic substrate 30 by normal evaporation, or covered on the elastic substrate 30 by PVD forming a film. In order to form a stronger adhesion between the two. In the process of deformation of the memory alloy substrate 10, the elastic substrate 30 can also deform together. When the application sets the maximum deformation of the elastic substrate 30 to be greater than or equal to the deformation of the memory alloy substrate 10, it can ensure that the elastic substrate 30 does not It will hinder the deformation process of the memory alloy substrate 10 .

Optionally, FIG. 5 shows another AA' sectional view of the electronic component mass transfer head provided in FIG. 1. In the electronic component mass transfer head provided in the embodiment of the present application, the memory alloy substrate 10 One side of the electronic component pick-up head 20 is also provided with a heating electrode 80, which is in direct contact with the memory alloy substrate 10 and uniformly covers the side of the memory alloy substrate away from the electronic component pick-up head 20. 10 is heated, the memory alloy substrate 10 can be controlled by the heating electrode 80 to be heated. It should be noted that when the heating electrode is arranged on one side of the memory alloy substrate 10 in a manner covering the entire surface, the uniform heating function of the memory alloy substrate can be realized, and the phenomenon of irregular expansion due to uneven heating of the memory alloy substrate can be avoided. Phenomenon.

Optionally, under normal temperature conditions, the area of the heating electrode 80 can be set larger than the area of the memory alloy substrate 10, to ensure that even after the memory alloy substrate 10 expands when heated, the heating electrode 80 can still cover the memory alloy substrate 10, This avoids the phenomenon that part of the memory alloy substrate 10 is not covered by the heating electrode 80 and thus unevenly heated. In addition, in order to make the memory alloy substrate 10 evenly heated, a heat equalizing material, such as graphite, can also be added between the heating electrode 80 and the memory alloy substrate 10, so that the memory alloy substrate can sense temperature changes more uniformly.

Further, please continue to refer to FIG. 5 , an opening is provided on the heating electrode 80 , the memory alloy substrate 10 is connected to the mechanical shaft 11 through the opening of the heating electrode 80 , and the mechanical shaft 11 is used to control the movement of the memory alloy 10 . Since the heating electrode 80 and the memory alloy 10 have different coefficients of thermal expansion, at different temperatures, the volume expansion of the two is also different, so the heating electrode 80 and the memory alloy 10 cannot be mechanically combined, so as to avoid the difference in body expansion and cause mutual dislocation. Therefore, the heating electrode 80 and the memory alloy 10 can be connected non-mechanically, such as only in surface contact, and even if the two expansions are different, the surface contact can be guaranteed. The heater electrode 80 may be electrically connected to an external control circuit.

It should be noted that FIG. 5 only shows an implementation manner of heating the memory alloy substrate, and in some other embodiments of the present application, other manners may also be used to heat the memory alloy substrate. For example, the mass transfer head for electronic components can be placed in a sealed space as a whole, and the temperature of the sealed space can be controlled to heat the memory alloy substrate.

Of course, in some other embodiments of the present application, the mass transfer head of electronic components may also include a temperature sensing element connected to the memory alloy substrate to detect the real-time temperature of the memory alloy substrate, so that the stretching of the memory alloy substrate Or the degree of shrinkage is more controllable, so that the electronic component pick-up head can more accurately pick up and bind the electronic components.

Based on the same inventive concept, the present application also provides a mass transfer method of electronic components based on the electronic component mass transfer head 100, please refer to FIG. 6, which shows the mass transfer of electronic components provided by the embodiment of the present application A flow chart of a method, the transfer method comprising:

Step 101. Slowly increase the temperature in the initial state of normal temperature, so that the memory alloy substrate 10 in the electronic component mass transfer head 100 is stretched, and the temperature is controlled at T1, so that any two adjacent electronic component pick-up heads 20 The center-to-center distance D1 between them is equal to the center-to-center distance D0 between any two adjacent electronic components located on the transfer substrate 50. Please refer to FIGS. 7 and 8. FIG. A schematic diagram, FIG. 8 is a schematic structural diagram of an electronic component 60 located on a transfer substrate 50, where the electronic component 60 may be, for example, a Micro-LED;

Step 102, please refer to FIG. 9 , keep the temperature T1, and move the mass transfer head 100 of the electronic component to the side of the transfer substrate 50 facing the electronic component, so that the electronic component pick-up head 20 and the electronic component 60 are located between the memory alloy substrate 10 and the transfer substrate 50, so that the electronic component transfer head 100 is located directly above the electronic component 60, FIG. 9 shows a relative positional relationship between the electronic component mass transfer head 100 and the electronic components on the transfer substrate 50;

Step 103, please refer to FIG. 10 , keep the temperature T1, move the electronic component bulk transfer head 100 towards the electronic component 60, and use the electronic component pick-up head 20 to pick up the electronic component 60, so that the electronic component 60 is separated from the transfer substrate 50, as shown in FIG. 10 Shown as a structural schematic diagram of electronic component pickup head 20 picking up electronic components;

Step 104, please refer to FIG. 11, slowly increase the temperature, so that the memory alloy substrate 10 is stretched again, and control the temperature at T2, so that the center-to-center distance between any two adjacent electronic component pick-up heads 20 carrying electronic components Increased to D2, Figure 11 shows a schematic structural view of the memory alloy substrate 10 carrying the electronic components after being stretched;

Step 105, please refer to FIG. 12 , move the electronic component mass transfer head 100 carrying the electronic components directly above the array substrate 90, move the electronic component mass transfer head 100 toward the array substrate 90, and bind the electronic components 60 On the array substrate 90, the electronic component 60 is separated from the mass transfer head 100 of the electronic component. FIG. 12 is a schematic structural diagram of transferring the electronic component to the array substrate 90;

Step 106 , lowering the temperature so that the memory alloy substrate 10 in the electronic component mass transfer head 100 shrinks.

Specifically, please refer to FIG. 6 to FIG. 12 , before the electronic component mass transfer head 100 is used to transfer electronic components, the application first adjusts the temperature so that the memory alloy substrate 10 is stretched, and the pick-up heads 20 of adjacent electronic components are stretched. The center-to-center distance D1 between them is equal to the center-to-center distance D0 between adjacent electronic components on the transfer substrate 50. In this way, in the process of picking up the electronic components 60, for example, refer to 8, the pickup head 20 and the electronic components on the transfer substrate 50 With a one-to-one correspondence, the entire electronic component can be transferred through the electronic component mass transfer head 100 at one time, thus avoiding the waste of LED resources. After the electronic components are adsorbed onto the pick-up heads 20, the center-to-center distance between the pick-up heads 20 of the electronic components is adjusted again by adjusting the temperature so that the center-to-center distance between the pick-up heads 20 of the electronic components becomes D2. The center-to-center distance between display pixels on the array substrate 90 is kept consistent, and then each electronic component can be precisely transferred to the array substrate 90 . In this way, by adjusting the temperature, the distance between the fixed electronic component pick-up heads 20 on the memory alloy substrate 10 can be adjusted, flexibly applicable to different Micro-LED pitches and pixel pitches, and effectively avoiding the waste of Micro-LED resources.

It should be noted that, considering that a sharp temperature change may cause problems such as cracks in the memory alloy material, when the memory alloy substrate is deformed by changing the temperature, the temperature change is performed slowly.

Optionally, when the temperature is increased slowly, the rate of temperature increase is V1, wherein, 5°C/min≤V1≤10°C/min.

Specifically, when the temperature is increased to deform the memory alloy substrate 10, the present application will control the rate of temperature increase at 5°C/min to 10°C/min, which can ensure that the memory alloy substrate 10 is deformed slowly and reliably, and It can effectively avoid the phenomenon that the temperature rises too fast and causes cracks in the memory alloy material.

Optionally, when the temperature is increased slowly, the temperature is increased at a uniform speed; the time required to increase from T1 to T2 is t, where t=(T2-T1)/V1.

Specifically, when the present application adjusts the deformation amount of the memory alloy substrate 10 by adjusting the temperature, it is preferable to increase the temperature in a uniform and slow manner, which is conducive to the memory alloy substrate 10 fully and accurately feeling the change of the ambient temperature, so that the deformation The process is carried out under the condition of fully sensing the ambient temperature, avoiding sudden changes in deformation due to sudden changes in temperature, and thus helping to improve the reliability of deformation of the memory alloy substrate 10 as the temperature changes.

Optionally, when the temperature is raised to T1, compared to the initial state at normal temperature, the deformation of the memory alloy substrate 10 in the electronic component mass transfer head 100 is S1; when the temperature is raised to T2, compared to the normal temperature In the initial state, the deformation amount of the memory alloy substrate 10 in the electronic component mass transfer head 100 is S2;

Wherein, D2-D0=S2*T2-S1*T1.

Specifically, usually, the center-to-center distance D2 between two adjacent display pixels on the array substrate is greater than the center-to-center distance D0 between two adjacent Micro LEDs on the growth substrate, and the electronic component pick-up head 20 sets the center-to-center distance as D0 After the Micro LED is picked up, the center-to-center distance between two adjacent electronic component pick-up heads 20 is increased by slowly increasing the temperature, so that it reaches D2, which is the distance between two adjacent display pixels on the array substrate. Center distances are equal. For different memory alloy substrates 10, corresponding to different deformation at different temperatures, this application can accurately calculate the center between two adjacent display pixels on the array substrate through the corresponding relationship between deformation and temperature at different temperatures. The corresponding relationship between the center distance D0 between two adjacent Micro LEDs on the growth substrate, so as to accurately control the deformation of the memory alloy, and thus help to improve the performance of the memory alloy substrate 10 formed by using different materials. Deformation accuracy.

Optionally, in the above step 106, the temperature is lowered so that the memory alloy substrate 10 in the electronic component mass transfer head 100 shrinks, specifically:

Lower the temperature to T1, so that the memory alloy substrate 10 in the mass transfer head 100 of electronic components shrinks, and the center-to-center distance between any two adjacent electronic component pick-up heads 20 is reduced from D2 to D1, using the electronic component pick-up head 20 Repeat the electronic component transfer operation;

Alternatively, the temperature is lowered to normal temperature, so that the memory alloy substrate 10 in the electronic component mass transfer head 100 shrinks to the initial state.

Specifically, after the batch transfer of a group of electronic components is completed, the shrinkage of the memory alloy substrate 10 can be controlled by lowering the temperature, and the distance between the pick-up heads 20 of adjacent electronic components can be reduced. When the distance is reduced to D1, it can Carry out the batch transfer of a new group of electronic components again; when the batch transfer of electronic components is completed, the temperature can be returned to normal temperature, so that the memory alloy substrate 10 shrinks to the initial state; thereby achieving reasonable control by raising or lowering the temperature The effect of the deformation amount of the memory alloy substrate 10 .

It can be seen from the above embodiments that the electronic component mass transfer head and transfer method provided by the present invention at least achieve the following beneficial effects:

In the electronic component mass transfer head and transfer method provided in the embodiments of the present application, a memory alloy substrate and a plurality of electronic component pick-up heads fixed on the first surface of the memory alloy substrate are introduced into the transfer head, and the memory alloy substrate can be Deformation occurs due to changes in temperature. When the temperature rises, the memory alloy substrate will stretch, making the center distance between the electronic component pick-up heads larger; when the temperature is lowered, the memory alloy substrate will shrink, making the electronic component pick-up head The center distance between them becomes smaller. In this way, by adjusting the temperature, the distance between the fixed electronic component pick-up heads on the memory alloy substrate can be adjusted, which is flexibly applicable to different Micro-LED pitches and pixel pitches, effectively avoiding the waste of Micro-LED resources.

Although some specific embodiments of the present invention have been described in detail through examples, those skilled in the art should understand that the above examples are for illustration only and not intended to limit the scope of the present invention. Those skilled in the art will appreciate that modifications can be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (10)

1. A mass transfer head for electronic components, characterized in that it comprises: a memory alloy substrate and a plurality of electronic component pick-up heads fixed on the first surface of the memory alloy substrate; at the same temperature, any two adjacent The center-to-center distance between the electronic component pickup heads is equal; The memory alloy substrate deforms as the temperature changes, and when the temperature rises, the memory alloy substrate stretches, and the center-to-center distance between any two adjacent electronic component pick-up heads becomes larger; when the temperature decreases , the memory alloy substrate shrinks, and the center-to-center distance between any two adjacent electronic component pick-up heads becomes smaller. 2. The electronic component mass transfer head according to claim 1, wherein the memory alloy substrate comprises Au-Cd, Ag-Cd, Cu-Zn, Cu-Zn-Al, Cu-Zn-Sn, Cu-Zn-Si, Cu-Sn, Cu-Zn-Ga, In-Ti, Au-Cu-Zn, NiAl, Fe-Pt, Ti-Ni, Ti-Ni-Pd, Ti-Nb, U-Nb and At least one of Fe-Mn-Si. 3. The mass transfer head for electronic components according to claim 1, wherein the thickness of the memory alloy substrate is H, where m*10nm≤H≤n*10 ³ nm, where 1≤m≤ 10, 1≤n≤10. 4 . The mass transfer head for electronic components according to claim 1 , wherein the pick-up head for electronic components and the memory alloy substrate are integrally formed of the same material. 5. The mass transfer head for electronic components according to claim 1, further comprising an elastic base, the elastic base is located on the second surface of the memory alloy base; The maximum deformation of the elastic base is greater than or equal to the deformation of the memory alloy base. 6. A mass transfer method for electronic components based on the mass transfer head for electronic components according to any one of claims 1-5, characterized in that it comprises: Slowly increase the temperature in the initial state of normal temperature, so that the memory alloy substrate in the electronic component mass transfer head is stretched, and the temperature is controlled at T1, so that the center distance D1 between any two adjacent electronic component pick-up heads is equal to The center-to-center distance D0 between any two adjacent electronic components on the transfer substrate is equal; Maintaining the temperature T1, moving the electronic component mass transfer head to the side of the transfer substrate facing the electronic component, so that the electronic component pick-up head and the electronic component are located between the memory alloy substrate and the transfer substrate. between the substrates, so that the electronic component transfer head is located directly above the electronic component; Maintaining the temperature T1, moving the electronic component mass transfer head towards the electronic component, using the electronic component pickup head to pick up the electronic component, and detaching the electronic component from the transfer substrate; Slowly increase the temperature so that the memory alloy substrate is stretched again, and control the temperature at T2, so that the center-to-center distance between any two adjacent electronic component pick-up heads carrying the electronic component increases to D2; moving the electronic component mass transfer head carrying the electronic components directly above the array substrate, moving the electronic component mass transfer head toward the array substrate, and binding each of the electronic components to the On the array substrate, the electronic component is separated from the mass transfer head of the electronic component; Lowering the temperature causes the memory alloy substrate in the mass transfer head of electronic components to shrink. 7 . The mass transfer method of electronic components according to claim 6 , wherein when the temperature is raised slowly, the rate of temperature rise is V1, wherein 5° C./min≦V1≦10° C./min. 8. The mass transfer method of electronic components according to claim 7, characterized in that, when the temperature is slowly raised, the temperature is raised at a uniform speed; the time required to increase from T1 to T2 is t, where t=( T2-T1)/V1. 9. The method for mass transfer of electronic components according to claim 6, characterized in that, when the temperature is raised to T1, compared with the initial state at normal temperature, the shape of the memory alloy substrate in the mass transfer head of the electronic components The variable is S1; when the temperature is raised to T2, compared with the initial state at normal temperature, the deformation of the memory alloy substrate in the mass transfer head of the electronic component is S2; Wherein, D2-D0=S2*T2-S1*T1. 10. The method for mass transfer of electronic components according to claim 6, characterized in that the temperature is lowered so that the memory alloy substrate in the mass transfer head of electronic components shrinks, specifically: Lower the temperature to T1, so that the memory alloy substrate in the electronic component mass transfer head shrinks, and the center distance between any two adjacent electronic component pick-up heads is reduced from D2 to D1, and the electronic component pick-up head is used to repeat Carry out electronic component transfer operations; Alternatively, the temperature is lowered to normal temperature, so that the memory alloy substrate in the electronic component mass transfer head shrinks to the initial state.