CN110272696A - Grinding back surface adhesive tape - Google Patents
Grinding back surface adhesive tape Download PDFInfo
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- CN110272696A CN110272696A CN201910179977.7A CN201910179977A CN110272696A CN 110272696 A CN110272696 A CN 110272696A CN 201910179977 A CN201910179977 A CN 201910179977A CN 110272696 A CN110272696 A CN 110272696A
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- Prior art keywords
- adhesive tape
- back surface
- grinding back
- semiconductor wafer
- grinding
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/50—Adhesives in the form of films or foils characterised by a primer layer between the carrier and the adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Laminated Bodies (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention provides a kind of grinding back surface adhesive tape, convex block, electrode protrusion are suitably followed when being pasted on the semiconductor wafer with concaveconvex shapes such as convex block, electrode protrusions, dent generation, wafer breakage generation rate are minimum when in addition overleaf grinding, and then convex block portion, electrode protrusion breakage generation rate are minimum when removing adhesive tape, residue glue can not be generated in glued face and be easily peeled off, the wafer thickness deviation after capable of sufficiently inhibiting grinding back surface.A kind of grinding back surface adhesive tape, the semiconductor wafer with substrate and the middle resin layer and adhesion coating that are sequentially formed on the substrate, the middle resin layer have 0.15 × 10 at 55~80 DEG C of any temperature6~1.51 × 106The storage modulus of Pa, the adhesion coating are made of the non-curable sticker comprising the acrylic acid series adhesion polymer with 2.0mgKOH/g or less acid value and 1.0~15.0mgKOH/g hydroxyl value as principal component.
Description
Technical field
The present invention relates to paste when carrying out the grinding back surface of semiconductor wafer in order to protect the surface of semiconductor wafer
Grinding back surface adhesive tape.
Background technique
About the semiconductor wafer of the state manufacture with major diameter, passing through photoresist, etching, ion implanting, polishing
Etc. after processes form scheduled circuit pattern, form electrode by sputtering on the surface of semiconductor wafer, according to becoming predetermined thickness
The mode of degree implements grinding back surface processing (hereinafter, being also recorded as " grinding back surface ".), further implement back side process as needed
(etching, polishing etc.), cutting off processing processing etc..
The works such as circuit and electrode are formed in semiconductor wafer surface.When carrying out above-mentioned grinding back surface, in order to anti-
Only the works is damaged by wound or contacts and is contaminated with lapping rejects or grinding water, has used in advance in semiconductor die
Piece surface mount is referred to as the adhesive tape of grinding back surface adhesive tape, removes the glue from semiconductor wafer after overleaf grinding
The method of band.
In order to make in overleaf grinding lapping rejects or grinding water not to invade semiconductor wafer surface, grinding back surface adhesion
Adhesive tape must sufficiently be sealed at semiconductor wafer surface when pasting.On the other hand, in order not to making the knot of semiconductor wafer surface
Structure object is damaged or pollution, must be easily sticker noresidue (residue glue) the case where when overleaf grinding is removed with adhesive tape
Lower desorption.
In addition, in recent years, along with the miniaturization of electronic equipment, densification, as half can be installed with minimum area
The method of conductor element, flip-chip installation just become mainstream.In the installation method, on the electrode of semiconductor element formed by
The convex block that solder, gold are constituted, the convex block and the wiring on circuit substrate are electrically engaged.For example, in the case where wafer-level packaging,
250~350 μm of the semiconductor wafer with convex block is up to using the height of the convex block.
But the semiconductor wafer with convex block is due on its surface there is big concaveconvex shape to add therefore, it is difficult to carry out film
Work is easy to produce (1) lapping rejects or grinding water intrusion, (2) are partly led if carrying out grinding back surface using common adhesive tape
Body wafer breakage, the thickness and precision of semiconductor wafer is deteriorated after (3) grinding back surface, (4) abradant surface generate dent (recess) this
The phenomenon that sample, therefore in the semiconductor wafer of lapping tape convex block, in order to follow the height and sorbent surface of above-mentioned convex block
Bumps, carried out grinding back surface processing using specially designed surface protection tape.Further, due to wanting to make grinding back surface
The thinner such requirement of the polishing thickness of chip afterwards is also still strong, therefore develops the various compositions with higher performance
Surface protection adhesive tape, the adhesive sheet of semiconductor wafer.
In patent document 1, when the back side for the poor big adherend of bumps provided on surface processes, in order to paste
Surface is protected and it is preferable to use can especially be ground adherend is ground to very thin with uniform thickness in surface
Mill, can prevent the purpose of adhesive sheet as the generation of dent, disclose a kind of surface protection adhesion of semiconductor wafer
Piece, for the adhesion being made of substrate, the middle layer being formed on the substrate and the adhering agent layer being formed in the middle layer
Piece, elasticity modulus of the middle layer at 40 DEG C is less than 1.0 × 106Pa。
In patent document 2, for offer in the height by the grinding back surface of chip to the bumps for being formed in wafer surface
When poor following, it can be realized and the intrusion wafer surface such as protect the bumps of wafer surface, prevent lapping rejects, grinding water and preventing from grinding
The purpose of the semiconductor wafer protection adhesive sheet of wafer breakage after mill discloses a kind of semiconductor wafer protection adhesion
Piece, for by it is more than substrate, at least one layer middle layer and adhering agent layer stack gradually made of semiconductor wafer protection with viscous
Piece, the binding temperature of the adhesive sheet and semiconductor wafer be 50 DEG C~100 DEG C, the middle layer with adhering agent layer contact side
Loss angle tangent (tan δ) under binding temperature is 0.5 or more, is being bonded temperature with the middle layer of adhering agent layer contact side
Loss modulus under degree is 0.005MPa~0.5MPa.
In patent document 3, the breakage of semiconductor wafer will not be generated grinding semiconductor chip for offer, seep
Leakage can be removed easily from semiconductor wafer, be able to suppress the mesh of the semiconductor wafer surface protection adhesive tape of residue glue
, a kind of semiconductor wafer surface protection adhesive tape is disclosed, to have the semiconductor of adhering agent layer on base material film
Wafer surface protection adhesive tape, is 0.3~10N/25mm for adhesion strength of the stainless steel at 23 DEG C, when being heated to 50 DEG C
Adhesion strength be 23 DEG C when adhesion strength 40% hereinafter, and the pure water after being just added dropwise to the adhering agent layer surface contact angle
It is 100 ° or more, the contact angle that pure water after ten minutes is added dropwise is 65 ° or more, and it is 20~50 that acid value is contained in the adhering agent layer
(mgKOH/g) (methyl) acrylic acid series polymeric compounds.
In patent document 4, it is sealed at semiconductor wafer, Er Qie securely in semiconductor wafer processing for offer
When removing can breakage without semiconductor wafer, the semiconductor wafer surface protection adhesive tape removed to residue glue mesh
, a kind of semiconductor wafer adhesive tape is disclosed, to exist in wafer surface with 20 μm or more of concave-convex chip
The semiconductor wafer adhesive tape of fitting is heated at a temperature of 60 DEG C or more, the semiconductor wafer is with adhesive tape at least by base
Material film, middle resin layer, surface this 3 layers of adhering agent layer composition, the fusing point of the base material film is more than 90 DEG C, and bending elastic modulus is
1GPa~10GPa, the middle resin layer is by ethylene-methyl acrylate copolymer resin, ethylene-ethyl acrylate copolymer resin
Or this 2 layers composition of any resin layer and polyvinyl resin layer in ethylene-butyl acrylate copolymer resin, base material film side is poly-
Ethylene resin layer, layer ratio be polyvinyl resin layer: copolymer resin layer=1:9~5:5, the middle resin layer with a thickness of convex
More than the height of block and fusing point is 50 DEG C~90 DEG C of range, and bending elastic modulus is 1MPa~100MPa.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2000-212530 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-258426 bulletin
Patent document 3: No. 5855299 bulletins of Japanese Patent No.
Patent document 4: Japanese Unexamined Patent Publication 2016-164953 bulletin
Summary of the invention
Subject to be solved by the invention
Using the adhesive sheet of patent document 1, it is able to suppress the thickness of the generation of dent after grinding back surface, chip
Spend deviation.However, since middle layer containing the acrylic acid series of acrylic acid series sticker and diisocyanate system curing agent by adhering
Agent composition or resin combination shape containing optical polymerism urethane acrylate system's oligomer and photopolymerization monomer
At, therefore elasticity modulus at 40 DEG C is smaller, the tan δ in addition within the scope of 0 DEG C~60 DEG C is larger.That is, due to centre
The viscosity of layer is strong (softness), therefore after adhesive sheet is pasted on chip, sticking when cutting adhesive tape along the periphery of chip
Cutting bits are possible to cause the pollution of chip, are carrying out grinding back surface to thinner to the higher chip with convex block of bump height
When, ooze out middle layer due to being applied to the pressure of adhesive sheet, it is possible to be unable to fully after inhibiting the breakage of chip, grinding
The deviation of wafer thickness.
Using the adhesive sheet of patent document 2, it can fit in positioned at semiconductor wafer surface to tight
Solder projection, even if the back side to semiconductor wafer is ground, can also make semiconductor wafer breakage rate, grinding water enchroachment (invasion)
The generation rate entered is 0%.However, loss angle tangent (tan δ) of the middle layer under binding temperature (50 DEG C~100 DEG C) is big extremely
0.5 or more, loss modulus as low as 0.005MPa~0.5MPa.That is, the viscosity due to middle layer is strong (softness), glue
Agent be embedded in tight together with middle layer in the bumps of the semiconductor wafer surfaces such as convex block, anchor effect becomes strong, for example,
Use ultraviolet hardening sticker as in the case where sticker, becomes difficult to remove sometimes, in this case, although not having
There is the breakage of chip, but due to the influence of the sticker elasticity modulus raising after ultraviolet curing, it is possible to produce convex block portion
It is damaged.
Using the adhesive tape of patent document 3,50 μm of surface segment difference or less can be followed with making it suitable for
Semiconductor wafer, can not generate semiconductor wafer breakage, leakage and easily from semiconductor wafer remove.However,
When removing adhesive tape, it is necessary to be heated to 50 DEG C, there are rooms for improvement in terms of workability, temperature management.In addition, due to
(methyl) acrylic acid series polymeric compounds for being 20~50 (mgKOH/g) containing acid value in adhering agent layer, thus it is close with the initial stage of chip
Whether conjunction property is high, when carrying out grinding back surface to the higher chip with convex block of bump height, it is unclear that can be without residue glue and appearance
It changes places and is removed.
Using the adhesive tape of patent document 4, even if in the case where having high convex block, distance between convex block
In the case where through thin space, in semiconductor wafer processing, melt middle resin layer and fitting by heating adhesive tape
Melt, convex block can be followed completely, be sealed at semiconductor wafer securely, and can be without the broken of semiconductor wafer in removing
Damage removes thin film semiconductor's chip to residue glue.However, sticker can follow completely the semiconductor dies such as convex block together with middle layer
The bumps on piece surface, anchor effect become strong, for example, use the sticker comprising radiation-curable polymer as sticker
In the case where, it is difficult to remove sometimes, in this case, although the not breakage of chip, due to viscous after ultraviolet curing
Agent elasticity modulus improve influence, it is possible to produce the breakage in convex block portion.
As long as described above, for being specifically designed with semiconductor wafers of concaveconvex shapes such as convex block, electrode protrusions
Previous surface protection adhesive tape, adhesive sheet, the generation for wafer breakage, the breakage of convex block portion after grinding back surface
Wafer thickness precision after rate, convex block peripheral portion, the residue glue of wafer surface, grinding just all can not fully meet, still deposit
In room for improvement.
The present invention is to solve the problems, such as above-mentioned previous invention, its purpose is to provide a kind of grinding back surface adhesive tape,
When being pasted on the semiconductor wafer with concaveconvex shapes such as convex block, electrode protrusions, convex block, electrode protrusion are compatibly followed, separately
When external progress grinding back surface, the generation of dent, the generation rate of wafer breakage are minimum, convex further when removing adhesive tape
Block portion, the generation rate of electrode protrusion breakage are minimum, can not generate residue glue on glued face and be easily peeled off, can be abundant
The thickness deviation of chip after inhibiting grinding back surface.
The method used for solving the problem
In view of the above subject, the inventors of the present invention are had made intensive studies, as a result, it has been found that: tool is pasted on by being made to heat
Have the semiconductor wafer surface of concaveconvex shape and at least by base material film, middle resin layer and non-radioactive line curing type adhering agent layer this
The semiconductor wafer adhesive tape structure of 3 layers of composition, and the energy storage mould by the middle resin layer within the scope of sticking temperature
The acid value and hydroxyl value for measuring (G ') and the adhering agent layer respectively provide in a specific range, are able to solve above-mentioned previous ask
Point is inscribed, thereby completing the present invention.
That is, the present invention provides a kind of grinding back surface adhesive tape, it is with substrate and to be sequentially formed in the substrate
On middle resin layer and adhesion coating semiconductor wafer grinding back surface adhesive tape, which is characterized in that
The middle resin layer has 0.15 × 10 at 55~80 DEG C of any temperature6~1.51 × 106The storage modulus of Pa
(G '),
The adhesion coating is by including third with 2.0mgKOH/g acid value below and the hydroxyl value of 1.0~15.0mgKOH/g
Olefin(e) acid system adhesion polymer makees non-curable as main component and (does not solidify) sticker structure because of the rear application of external energy
At.
Here, at 55~80 DEG C of any temperature, middle resin layer has 0.15 × 106~1.51 × 106The energy storage of Pa
Modulus (G ') refers to the storage modulus (G ') of the middle resin layer under some specific temperature within the temperature range of 55~80 DEG C
It is 0.15 × 106~1.51 × 106Pa。
In addition, above-mentioned middle resin layer preferably has the difference of height for the concaveconvex shape for being present in semiconductor wafer surface
1.2 times or more of thickness.
In addition, further, above-mentioned middle resin layer preferably comprises vinyl-vinyl acetate copolymer (EVA) and is formed.
In addition, further, above-mentioned vinyl-vinyl acetate copolymer (EVA) preferably comprises the acetic acid of 25~40 mass %
Vinyl acetate.
In addition, further, above-mentioned substrate preferably has 50~200 μm of thickness.
In addition, further, above-mentioned adhesion coating preferably has 10~50 μm of thickness.
In addition, further, above-mentioned adhesive tape joining in the semiconductor wafer surface with convex block and using microscope from
When surface is observed, if by observed by adhesive tape/diameter of convex block of measurement is set as rb, by the convex block periphery
Adhesive tape, which can not be sealed at semiconductor wafer surface and be formed by the diameter in round non-closely sealed portion, in portion is set as ra, then ra/rb's
Value preferably 1.15~1.50.
In addition, further, the difference of height for being present in the concaveconvex shape of above-mentioned semiconductor wafer surface is preferably 50~300 μ
m。
It is in addition, in some way, above-mentioned grinding back surface adhesive tape joining is viscous when the above-mentioned semiconductor wafer
Paste any temperature that temperature is 55~80 DEG C.
Invention effect
Grinding back surface adhesive tape of the invention is being pasted on the semiconductor with concaveconvex shapes such as convex block, electrode protrusions
When chip, compatibly follow convex block, electrode protrusion, when in addition overleaf grinding, the generation of dent, wafer breakage generation rate pole
Small, further when removing adhesive tape, convex block portion, the generation rate of electrode protrusion breakage are minimum, can be on glued face not
It generates residue glue and is easily peeled off, can sufficiently inhibit the thickness deviation of the chip after grinding back surface.
Detailed description of the invention
Fig. 1 is the section for indicating the layer structure of the grinding back surface adhesive tape as an embodiment of the invention
Figure.
Fig. 2 be will as an embodiment of the invention grinding back surface adhesive tape joining in solder projection
The sectional view when surface of semiconductor wafer.
Fig. 3 be will as an embodiment of the invention grinding back surface adhesive tape joining in solder projection
Across the top view of adhesive tape observation when the surface of semiconductor wafer.
Symbol description
1: substrate,
2: middle resin layer,
3: adhesion coating,
4: semiconductor wafer,
5: solder projection.
Specific embodiment
Fig. 1 is the section for indicating the layer structure of the grinding back surface adhesive tape as an embodiment of the invention
Figure.The grinding back surface adhesive tape of Fig. 1 has substrate 1 and the middle resin layer 2 being sequentially formed on the substrate and adhesion
Layer 3.As shown in Fig. 2, grinding back surface of the invention with adhesive tape joining in the surface of the semiconductor wafer with solder projection come
It uses.
The member of formation and layer structure of grinding back surface of the invention adhesive tape are not limited to embodiment shown in FIG. 1.
Grinding back surface of the invention also can have the layer in addition to substrate 1, middle resin layer 2 and adhesion coating 3 with adhesive tape.
Grinding back surface adhesive tape can also have before the use for protecting the peeling liner of the adhesive surface of adhesion coating 3
It pads (not shown).It is not particularly limited as such release liner, it can the suitably selection use from well known release liner.
It include paper, high molecular material, cloth, metal as long as substrate 1 has the material of the intensity of tolerance use environment
Foil etc..It is preferred that by vinyl chloride, polystyrene, polyimides, polyamide, poly- (tetrafluoroethene) and (polyethylene terephthalate
Ester, polyethylene naphthalate etc.) high molecular materials such as polyester constitute.Wherein, in the grinding back surface for carrying out semiconductor wafer
Afterwards, for transport without damaging becomes thin-walled and has become fragile semiconductor wafer, it is preferable to use the polyester film of high rigidity is as base
Material 1.In addition, if using polyester film as substrate 1, due to high rigidity and inviscid, at the back side of semiconductor wafer
Also the stickup of substrate 1 Yu chuck table is able to suppress after grinding.The form of these substrates be it is membranaceous, thickness is usually 50~
200 μm, preferably 75~100 μm.
If the thickness of substrate is thinner than 50 μm, it is likely that rigidity is insufficient and can not inhibit the semiconductor die after grinding back surface
The warpage of piece, it is possible to which the semiconductor wafer surface after overleaf grinding generates dent.If the thickness of substrate than 200 μ m-thicks,
Then when scroll state is made in adhesive tape, release liner is possible to peel off, semiconductor when removing adhesive tape after overleaf grinding
Chip is possible to damaged.
As needed, as well known in the art, by the way that paint base composition is applied to substrate or implements electricity to substrate
Dizzy processing or flame treatment, it is before the resin combination so as to resin layer between in the application, the surface of substrate is modified, it mentions
The resin combination of high middle resin layer and the cementability of substrate.Using polyethylene terephthalate or poly- naphthalenedicarboxylic acid
It is especially suitable using priming paint in the case where the substrate of glycol ester.
Middle resin layer 2 is to absorb the height as caused by concaveconvex shape when adhesion coating is pasted on semiconductor wafer surface
Its upper layer, that is, base material film surface is maintained the layer of flat condition by low difference.In addition to this, it may have as will not because back
The effect of the buffer layer of pressure, the appropriateness impacted and keep semiconductor wafer damaged when face is ground.Here, caused by concaveconvex shape
Difference of height refer to the surface for never forming the glued face of convex block, projected electrode to the highest order in convex block, projected electrode
The distance set.
Middle resin layer 2 adhesive tape joining in semiconductor wafer surface at a temperature of storage modulus (G ') be 0.15
×106~1.51 × 106Pa.If storage modulus of the middle resin layer 2 under sticking temperature is less than 0.15 × 106Pa, then excessively
Softness, therefore the bumps in glued face are seamlessly embedded in, in adhesive tape removing, convex block portion is possible to damaged, glued
Residue glue is easy to produce on face.On the other hand, if storage modulus of the middle resin layer 2 under sticking temperature be more than 1.51 ×
106Pa reduces the concave-convex tracing ability in glued face then due to really up to the mark, lapping rejects or grinding water when overleaf grinding
It is easy intrusion.Storage modulus of the middle resin layer 2 under sticking temperature is preferably 0.30 × 106Pa~1.00 × 106Pa。
Storage modulus (G ') of the middle resin layer 2 at 23 DEG C is preferably 5.00 × 106~7.00 × 106Pa.In semiconductor
When the grinding back surface of chip, the adhesive tape of stickup becomes 40 DEG C or so from room temperature, but if the storage modulus (G ') at 23 DEG C
For the range, then by adhesive tape joining after semiconductor wafer surface, when carrying out grinding back surface to semiconductor wafer, Neng Goufang
Middle resin layer is only set to flow or ooze out because being applied to the pressure of adhesive tape, therefore adhesive tape can suitably be kept
Semiconductor wafer can moderately mitigate impact when grinding back surface, to can press down in the grinding back surface of semiconductor wafer
The breakage of semiconductor wafer processed, after overleaf grinding, the dent for being able to suppress semiconductor wafer surface is generated, and makes semiconductor wafer
Thickness deviation become smaller.
From the viewpoint of adjusting the storage modulus under sticking temperature, middle resin layer 2 preferably comprises thermoplastic resin.Heat
Plastic resin can be one kind, in addition can also combine two or more use.
As the representative example of thermoplastic resin, polyethylene (PE) can be enumerated；Polybutene；Ethylene-propylene copolymer
(EPM), ethylene-propylene-diene copolymer (EPDM), ethylene-ethyl acrylate copolymer (EEA), ethylene-ethylacrylate-
Copolymer-maleic anhydride (EEAMAH), ethylene-methyl methacrylate glycidyl ester copolymer (EGMA), ethylene-methyl methacrylate
The ethylene copolymers such as copolymer (EMAA), vinyl-vinyl acetate copolymer (EVA)；Polyolefin copolymer；Butadiene-based bullet
The thermoplastic elastomer (TPE)s such as property body, ethylene-isoprene based elastomers, ester based elastomers；Thermoplastic polyester；The copolymerization of 12 system of polyamide
The polyamide resins such as object；Polyurethane；Polystyrene resin；Cellophane；Polyacrylate, polymethyl methacrylate etc. third
Olefin(e) acid system resin；Polyvinyl chloride resins such as vinyl chloride vinyl acetate copolymer etc..
In addition, the weight average molecular weight of above-mentioned thermoplastic resin ranges preferably from 20,000~300,000, further preferably
It is 30,000~250,000.
Middle resin layer 2 preferably comprises vinyl-vinyl acetate copolymer (EVA) and is formed.Include in middle resin layer
In the case where vinyl-vinyl acetate copolymer, even if the difference of height caused by the concaveconvex shape as semiconductor wafer surface is
In the case where 50~300 μm, also it is easy with the appropriate tracing ability for concaveconvex shape.In some mode, intermediate resin
Layer is substantially formed by vinyl-vinyl acetate copolymer.
Vinyl-vinyl acetate copolymer contains the vinyl acetate of 25~40 mass %.If the vinyl acetate of EVA
Content is less than 25 mass %, then the flexibility of middle resin layer becomes inadequate, and the concave-convex tracing ability in glued face is dropped
Low, if it exceeds 40 mass %, then middle resin layer becomes excessively soft, is easy to produce adhesion after the coiling, stablizes film and becomes
Obtain difficult, productivity reduction.
Contain the ethane-acetic acid ethyenyl ester of the vinyl acetate of 25~40 mass % in vinyl-vinyl acetate copolymer
In copolymer, particularly preferred melt flow rate (MFR) (MFR) is 2~700g/10 minutes, more preferably 5~400g/10 minutes.Such as
Fruit melt flow rate (MFR) is the range, then can have the appropriate tracing ability of the concaveconvex shape for semiconductor wafer surface, together
When can to the steadily melting extrusion of substrate 1 be film-made be used as middle resin layer.
Middle resin layer 2 can also include other compositions in the range of not damaging characteristic.As such ingredient, such as
Tackifier, plasticizer, softening agent, filler, antioxidant, anti-blocking agent etc. can be enumerated.Middle resin layer 2 can be by 1 layer of structure
At, it is possible to have the multilayered structure being made of identical type or different types of multilayer.There is multilayer knot in middle resin layer
In the case where structure, the thickness of middle resin layer refers to the aggregate thickness of multilayer.
When the thickness of middle resin layer 2 difference of height according to caused by the concaveconvex shape as glued face, bump are formed
The deviation of difference of height determines.The thickness of middle resin layer is, for example, 1.2 of the difference of height as caused by the concaveconvex shape in glued face
Times or more.If the thickness of middle resin layer is less than 1.2 times of the difference of height as caused by the concaveconvex shape in glued face, can not
It fully absorbs the concave-convex difference of height in glued face and glued face can not be sealed at, lapping rejects or grinding water when overleaf grinding
It is possible that invading.In addition, the prominent substrate in concave-convex protrusion when pasting adhesive tape due to glued face, overleaf grinds
Semiconductor wafer surface after mill is possible to generate dent, and semiconductor wafer thickness is possible to generate deviation.Middle resin layer
Thickness is preferably 1.4~1.6 times of the difference of height as caused by concaveconvex shape.
It as the method that middle resin layer 2 is laminated in substrate 1, is not particularly limited, such as method can be listed below,
That is: it is laminated with preprepared substrate 1 on one side passing through while extruder is membranaceous by 2 extrusion molding of middle resin layer
Method；The method that substrate 1 is squeezed out together with middle resin layer 2；The side for being coated with resin solution and drying on substrate 1 and being formed
Method etc..The method of extrusion can enumerate T mould extrusion molding, inflation method.
Adhesion coating 3 is closed by its and being sealed at semiconductor wafer surface, and is formed by sticker, which has
Keep minimum needed for semiconductor wafer in order to prevent in overleaf grinding lapping rejects or grinding water from invading, and overleaf in grinding
The adhesion strength of limit.Adhesion coating 3 is easily peeled off after must overleaf grinding, as long as the adhesion strength of sticker meets above-mentioned spy
Property, it is preferably as low as possible.
Adhesion coating 3 is 0.10N/25mm or more and 0.50N/25mm or less for adhesion strength of the stainless steel at 25 DEG C.?
In the case that the above-mentioned adhesion strength of adhesion coating is less than 0.10N/25mm, the closed of glued face is become inadequate, and overleaf grinds
Middle lapping rejects or grinding water are possible to invade glued face.In addition, adhesive tape is fitted in partly leading with concaveconvex shape
Adhesive tape is possible to float from wafer surface behind the surface of body chip.If the above-mentioned adhesion strength of adhesion coating is more than 0.50N/
25mm when being removed after then overleaf grinding, is possible to generate residue glue in glued face, is present in the knot in glued face
Structure object such as circuit pattern or electrode, convex block portion are possible to damage.
Adhesion coating 3 refers to " adhesion strength " of stainless steel: by the way that 2kg roll makes a round trip to adhere at 23 DEG C
Tape-stripping is on using the stainless steel that No. 280 water-fast pouncing papers are polished specified in JIS R 6253, by stickup
180 degree peel adhesion of the adhesion coating when being removed with the angle of 300mm/ minutes peeling rates and 180 degree for 23 DEG C.
Adhesion coating 3 is formed by the sticker that will not remain on glued face after the removing of glued face.It adheres as constituting
The sticker of layer 3, such as acrylic acid series sticker can be enumerated.Such as even if the case where the adhesive surface of adhesion coating is clamped with air
Under, specifically in the case where the convex block peripheral portion of the semiconductor wafer with convex block has been mixed into air, in order to removing when will not
Because occur in radiation-curing type acrylic acid series sticker the solidification caused by oxygen obstacle it is bad due to glued face
Residue glue is generated, preferably makees sticker as main component comprising acrylic acid series adhesion polymer, and in final manufacture processing
It is non-curable in the state of adhesive tape.
Term " main component " refers to the ingredient comprising being enough to determine the amount of the physical property of material and characteristic.In sticker,
Main component usually contains the amount of 50 mass % or more, 70 mass % or more or 85 mass % or more.As except main component with
The ingredient of outer sticker can enumerate the additives such as crosslinking agent, plasticizer, softening agent, filler, antioxidant.Term is " non-solid
The property changed " refers to that sticker does not have curing performance when removing adhering agent layer from semiconductor wafer surface.It is being incited somebody to action that is, referring to
When adhering agent layer is removed from semiconductor wafer surface, sticker will not be due to the rear application of the external energies such as radioactive ray irradiation, heat
Solidification.Gather specifically, referring to and not remaining photosensitive group, temperature-sensitive group etc. in the state that adhesive tape is processed into final manufacture
Close the sticker of reactive site, cross-linking reaction position.
Sticker comprising acrylic acid series adhesion polymer preferably have 2.0mgKOH/g acid value below and 1.0~
15.0mgKOH/g hydroxyl value.Here, acid value refers to hydrogen-oxygen required in order to neutralize acid ingredient contained in 1g object
Change the amount (mg) of potassium.In addition, hydroxyl value refers in order to by potassium hydroxide required for OH base acetylation contained in 1g object
Amount (mg).By by include acrylic acid series adhesion polymer sticker acid value and hydroxyl value be set as above range, from
And adhesion strength can be set as above-mentioned proper range in the combination of above-mentioned substrate 1 and middle resin layer 2, as a result, overleaf
Can prevent lapping rejects or grinding water from invading glued face in grinding, after overleaf grinding can on glued face without residue glue and
It is easily peeled off adhesive tape.
If the acid value of the sticker comprising acrylic acid series adhesion polymer is more than 2.0mgKOH/g, the stripping of adhesion coating
Become larger from power, is easy to generate residue glue in glued face.The acid value of sticker comprising acrylic acid series adhesion polymer is preferably
1.0mgKOH/g following.The acid value of sticker comprising acrylic acid series adhesion polymer is preferably 0, but is using acrylate
In the case where, it is substantially highly difficult to remove acid value completely.
If the hydroxyl value of the sticker comprising acrylic acid series adhesion polymer is less than 1.0mgKOH/g, especially exist
The compound that contains the isocyanate group reacted with hydroxyl is used as in the case where crosslinking agent, since the crosslinking in adhesion coating is close
Degree reduces, and cohesiveness reduces, therefore is easy to generate residue glue in glued face.If viscous comprising acrylic acid series adhesion polymer
The hydroxyl value of agent be more than 15.0mgKOH/g, then the peeling force of adhesion coating becomes larger, and is easy to generate residue glue in glued face.Include
The hydroxyl value of the sticker of acrylic acid series adhesion polymer is preferably 2.0~5.0mgKOH/g.
The specific example of acrylic acid series adhesion polymer has: at least having (methyl) acrylic monomer containing alkyl
(a1) as (methyl) acrylic acid series polymeric compounds (A) of monomer component.
As (methyl) acrylic monomer (a1) containing alkyl, specifically, can for example enumerate (methyl) acrylic acid first
Ester, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) butyl acrylate, (first
Base) isobutyl acrylate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) amyl acrylate, (methyl)
Hexyl 2-propenoate, (methyl) heptylacrylate, (methyl) 2-ethyl hexyl acrylate, (methyl) Isooctyl acrylate monomer, (methyl) acrylic acid
2- ethylhexyl, (methyl) nonyl acrylate, the different nonyl ester of (methyl) acrylic acid, (methyl) decyl acrylate, (methyl) acrylic acid
Isodecyl ester, (methyl) acrylic acid hendecane base ester, (methyl) dodecylacrylate, (methyl) tridecyl acrylate,
(methyl) acrylic acid tetradecane base ester, (methyl) acrylic acid pentadecane base ester, (methyl) aliphatic acrylate, (methyl) third
Olefin(e) acid heptadecane base ester, (methyl) octadecyl acrylate, (methyl) cyclohexyl acrylate etc..They can be used alone or
Using a variety of.In these substances, it is preferably selected from by (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propylene
In the group that propyl propionate, (methyl) isopropyl acrylate, (methyl) butyl acrylate and (methyl) 2-EHA form
At least one.In addition, using a variety of (methyl) acrylic monomers (a1) containing alkyl, it can be by a kind of use
Make principal monomer, other are used as comonomer.It should be noted that the alkyl of (methyl) acrylic monomer (a1) containing alkyl
Number is not particularly limited, but if considering production cost, then preferably 10 hereinafter, more preferably 8 or less.In addition, containing alkyl
(methyl) acrylic monomer (a1) is preferably calculated as 0 DEG C of monomer below with the glass transition temperature of homopolymer.
The total content of (methyl) acrylic monomer (a1) containing alkyl in (methyl) acrylic acid series polymeric compounds (A) is opposite
In monomer component total amount be preferably 50~100 mass %.
(methyl) acrylic acid series polymeric compounds (A) are as long as have a kind of above-mentioned (methyl) acrylic monomer (a1) containing alkyl
As principal monomer, it is also possible to that there is copolymerization of (methyl) acrylic monomer as comonomer containing functional group
Object.By using (methyl) acrylic monomer containing functional group, it can be improved other characteristics such as cohesiveness.
As (methyl) acrylic monomer containing functional group, specifically, can for example enumerate: (methyl) acrylic acid 2- hydroxyl
Base ethyl ester, (methyl) acrylic acid 2- hydroxy propyl ester, (methyl) acrylic acid 4- hydroxybutyl, the own ester of (methyl) acrylic acid 6- hydroxyl etc.
(methyl) acrylic monomer of hydroxyl；(methyl) the acrylic acid series list containing epoxy group such as (methyl) glycidyl acrylate
Body；Carboxylic (methyl) acrylic monomer such as (methyl) acrylic acid；(methyl) acrylamide, N, N- dimethyl (methyl) third
Acrylamide, N- butyl (methyl) acrylamide, N- methylol (methyl) acrylamide, N- hydroxymethyl-propane (methyl) acryloyl
(methyl) third of the amide-containings such as amine, N- methoxy (methyl) acrylamide, N- butoxymethyl (methyl) acrylamide
Olefin(e) acid system monomer；(methyl) acrylate, (methyl) acrylic acid N, N- dimethylamino ethyl ester, (methyl) acrylic acid uncle
Amino-containing (methyl) acrylic monomer such as butylaminoethyl；(methyl) acrylic acid series of the cyano-containings such as (methyl) acrylonitrile
Monomer；(methyl) acrylic acid series containing alkoxy such as (methyl) methoxyethyl acrylate, (methyl) ethoxyethyl acrylate
Monomer etc..They can be used alone or using a variety of.Such (methyl) acrylic monomer containing functional group is preferably with equal
The glass transition temperature meter of polymers is higher than 0 DEG C of monomer.
The total content of (methyl) acrylic monomer containing functional group in (methyl) acrylic acid series polymeric compounds (A) relative to
Monomer component total amount is preferably 0~30 mass %, but as long as according to the final sticker comprising acrylic acid series adhesion polymer
Acid value be 2.0mgKOH/g or less, the mode that hydroxyl is 1.0~15.0mgKOH/g range is suitably adjusted.
In addition, in order to improve other characteristics such as cohesiveness, (methyl) acrylic acid series polymeric compounds (A) can also further contain
Other monomers are as comonomer.As such other monomers, the list containing anhydride group such as maleic anhydride, itaconic anhydride can be enumerated
Body；The vinyl acetates such as vinyl acetate, vinyl propionate system monomer；The vinyl ethers such as methyl vinyl ether, ethyl vinyl ether system
Monomer；N-vinyl-2-pyrrolidone, N- methyl ethylene pyrrolidones, N- vinylpyridine, N- vinylpiperidone, N-
Vinyl pyrimidine, N- vinyl piperazine, N- vinylpyrazine, N- vinyl pyrrole, N- vinyl imidazole, N- vinylAzoles,
N- polyvinyl morpholinone, N- caprolactam, N- (methyl) acryloyl morpholine etc. have the monomer of the ring of nitrogen atom.It
Can be used alone or using a variety of.The total content of these other monomers is preferably 0~10 matter relative to monomer component total amount
Measure %, but as long as according to the acid value of the final sticker comprising acrylic acid series adhesion polymer become 2.0mgKOH/g or less,
The mode that hydroxyl becomes 1.0~15.0mgKOH/g range is suitably adjusted.
As the polymerization for synthesizing (methyl) acrylic acid series polymeric compounds (A), it is poly- that known solution can be enumerated
Legal, emulsion polymerization, mass polymerization, suspension polymerization etc., in these methods, the solution that preferred polymeric uniformly carries out are poly-
It is legal.Organic solvent when as progress polymerisation in solution, specifically, can for example enumerate ketone system, ester system, alcohol system, aromatic system
Organic solvent.These organic solvents can be used alone or using a variety of.In these substances, preferably toluene, ethyl acetate,
Isopropanol, benzyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone etc. are generally for (methyl) acrylic acid series polymeric compounds (A)
Good solvent and the organic solvent with 60~120 DEG C of boiling points.In addition, can enumerate α as polymerization initiator, α '-azo is double different
The double systems of the azos such as butyronitrile；The free-radical generating agents such as the organic peroxides such as benzoyl peroxide system.
The weight average molecular weight MwA of (methyl) acrylic acid series polymeric compounds (A) obtained such as aforesaid operations is preferably 100,000~100
Ten thousand, more preferably 300,000~700,000.If weight average molecular weight MwA less than 100,000, sometimes at high temperature sticker product flows,
Retentivity reduces, and generates residue glue in adherend sometimes.On the other hand, if weight average molecular weight MwA is greater than 1,000,000, have
When in synthesis and sticker ingredient gelatine when coating, or the concave-convex tracing ability in glued face is reduced.It needs to illustrate
, in the present specification, weight average molecular weight, number-average molecular weight and molecular weight distribution are by GPC (gel permeation chromatography)
The measured value (solvent: tetrahydrofuran) of polystyrene conversion.
Have (methyl) acrylic monomer containing functional group as comonomer in (methyl) acrylic acid series polymeric compounds (A)
In the case where, adhesion coating 3 can contain and the function using (methyl) acrylic monomer importing intramolecular containing functional group
The crosslinking agent of group's crosslinking.By using such crosslinking agent, it is capable of forming three-dimensional crosslinking structure, can be improved cohesiveness.
As crosslinking agent, specifically, can for example enumerate polyisocyanate system crosslinking agent, epoxy crosslinking agent, aziridine
It is crosslinking agent, melamine resin system crosslinking agent, urea resin system crosslinking agent, anhydride compound system crosslinking agent, the crosslinking of polyamines system
Agent, carboxylic polymer system crosslinking agent etc..These crosslinking agents can be used alone or using a variety of.It is excellent in these substances
Select the polyisocyanate system crosslinking agent for the isocyanate group for having reactivity excellent.
The content of crosslinking agent depends on the content of (methyl) acrylic monomer containing functional group, but relative to (methyl) third
100 mass parts of olefin(e) acid based polymer (A), preferably 0.1~10 mass parts.Crosslinking temperature is preferably 20~70 DEG C, crosslinking time
Preferably 1 day~7 days.
The thickness of adhesion coating 3 can the concave-convex difference of height, semiconductor wafer that do not damage circuit pattern face retentivity,
It is suitably selected in the range of protectiveness, but preferably 5~50 μm.More preferably 10~30 μm.If the thickness of adhesion coating is less than 5
μm, then adhesion strength is lower, and lapping rejects or grinding water are possible to invade when overleaf grinding.If the thickness of adhesion coating is more than 50 μ
M, then adhesion strength becomes larger, and is possible to generate residue glue in glued face in adhesive tape removing, it is possible to make convex block, projected electrode
Equal works are damaged.
As the method for forming adhesion coating 3, it is not particularly limited, such as formed by rubbing method.That is, with toluene, acetic acid
The organic solvents such as ethyl ester will adhere dilution agent and obtain adhesion coating coating liquid.Then, obtained adhesion coating coating liquid is coated with
Surface and drying in the middle resin layer 2 for being laminated in substrate 1 in advance, solidification, to form adhesion coating 3.As needed viscous
Be bonded release liner on layer 3.Alternatively, adhesion coating coating liquid can also be temporarily coated on to surface and the drying of release liner,
Then, the surface for being laminated in the middle resin layer 2 of substrate 1 in advance is fitted in together with release liner, is solidified to form it viscous
Layer 3.From the viewpoint of workability, preferably formed by the coating transfer printing of the latter.
Grinding back surface of the invention is preferably applied to the semiconductor wafer surface there are concaveconvex shape with adhesive tape.As
Concaveconvex shape, such as the shape of the works such as the salient pole of overshooting shape, circuit can be enumerated.Grinding back surface adhesion of the invention
The difference of height for the concaveconvex shape that adhesive tape can be applicable in does not specify, but is present in the height of the concaveconvex shape in above-mentioned glued face
Preferably 50~300 μm of low difference.
When grinding back surface of the invention is applied to grinding back surface with adhesive tape, grinding back surface is heated with adhesive tape
There is the temperature for the abundant flexibility deformed along the concaveconvex shape in glued face to adhesion coating and middle resin layer,
Adhesion coating is pasted on to the surface of semiconductor wafer.The temperature for pasting grinding back surface adhesive tape is usually 55~80 DEG C, excellent
It is selected as 60~75 DEG C.
As shown in figure 3, in the semiconductor wafer surface with convex block and leading in grinding back surface adhesive tape joining of the invention
When crossing microscope from surface, if by observed by adhesive tape/diameter of convex block of measurement is set as rb, this is convex
Adhesive tape, which can not be sealed at semiconductor wafer surface and be formed by the diameter in round non-closely sealed portion, in block peripheral portion is set as ra, then
ra/rbValue be preferably 1.15~1.50.ra/rbValue closer to 1.0, then mean that air can not be mixed into convex block substantially
Peripheral portion, adhesive tape follow convex block completely.However, in adhesive tape removing, making semiconductor wafer if followed completely
Convex block portion it is damaged a possibility that get higher.Grinding back surface adhesive tape of the invention is by by ra/rbValue be set as above range from
And formation not exclusively follows the appropriate of convex block and follows state, when combining with above-mentioned adhesion coating 3, is able to suppress when overleaf grinding
The breakage of semiconductor wafer, the convex block portion that semiconductor wafer is able to suppress in adhesive tape removing is damaged, and in glued face
Do not generate residue glue.In the case where applying radiation-curing type acrylic acid series sticker in sticker as described above, if endless
Convex block is followed entirely, then sometimes due to solidification caused by oxygen obstacle contained by air is bad and causes to generate glued face residual
Glue, but since the adhesion coating of grinding back surface adhesive tape of the invention is the non-curable adhesion coating with appropriate adhesion strength, because
Even if this is as shown in Fig. 2, be for example mixed into air, also residue glue can not be generated in glued face when adhesive tape is removed.Such as
Fruit ra/rbValue be more than 1.50, then a possibility that overleaf lapping rejects or grinding water invade glued face in grinding, gets higher.
After grinding back surface, grinding back surface of the invention with adhesive tape by make adhesion coating from glued emaciated face it is attached come
Removing.The desorption of adhesion coating from semiconductor wafer surface separation by carrying out grinding back surface with adhesive tape.Adhering agent layer
Contained sticker is non-curable, without carrying out radioactive ray irradiation or heating when removing.
Hereinafter, present invention will be further described in detail through examples, but the present invention is not limited to these Examples.It needs to illustrate
, hereinafter, " part " refers to " mass parts ".
Embodiment
(embodiment 1)
The production > of the laminated body of < substrate and middle resin layer
As substrate, prepare to utilize polyolefin in the one side of polyethylene terephthalate (PET) film (thickness: 75 μm)
It is substrate obtained by the easy bonding processing of fixed coating (thickness: 1 μm) implementation of resin.Thermoplastic resin as middle resin layer
Rouge uses ethylene-vinyl acetate copolymer resin (EVA) (vinyl acetate (VA) content: 32 mass %, melt flows speed
Rate: 30g/10 minutes), by extrusion by melting, formed in a manner of with a thickness of 350 μm on the fixed coating of above-mentioned substrate
Between resin layer, after next implementing sided corona treatment to the surface of middle resin layer, close protective film simultaneously in above-mentioned sided corona treatment face paste
Winding makes the laminated body of the substrate with protective film and middle resin layer.
The production > of < sticker solution A
By 44 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
0.3mgKOH/g, hydroxyl value: 3.2mgKOH/g, molecular weight Mw:40 ten thousand, solvent: toluene) 100 mass parts, toluene di-isocyanate(TDI)
It is crosslinking agent (solid component concentration: 75 mass %) 2.07 mass parts, the mixing of 28.07 mass parts of ethyl acetate, production is solid
The sticker solution A of 35 mass % of body constituent concentration.
The formation of < adhering agent layer and the production > of grinding back surface adhesive tape
On the face of the organosilicon processing side for the demoulding PET film (thickness: 38 μm) that one side is handled through organosilicon, after drying
Be coated with above-mentioned sticker solution A and drying with a thickness of 20 μm of mode, by the face paste of the adhering agent layer after drying together in protection
The face of the middle resin layer side of the laminated body of substrate and middle resin layer that film is largely stripped off and winding.Then, by gained
To volume be fed again into coating machine, after removing above-mentioned demoulding PET film, again again by polyethylene-based protective film (thickness: 100 μm)
Fit in the face of adhering agent layer.The volume is cured 72 hours in the environment of 40 DEG C, makes grinding back surface adhesive tape.
The measurement > of < adhesion strength (=peeling force)
For above-mentioned grinding back surface adhesive tape, adhesion strength is measured by the following method.Above-mentioned grinding back surface is used
Adhesive tape is heated to identical in the aftermentioned temperature of semiconductor die on piece with convex block as grinding back surface adhesive tape joining
75 DEG C, so that 2kg roll is made a round trip, so that above-mentioned grinding back surface be advised in using JIS R 6253 with adhesive tape joining
On the stainless steel that No. 280 fixed water-fast pouncing papers are polished, measurement is by the adhesion coating of stickup at 23 DEG C with 300mm/ minutes
Peeling rate and 180 degree angle removing when 180 degree peel adhesion.
The adhesion strength of above-mentioned grinding back surface adhesive tape is 0.40N/25mm (75 DEG C of sticking temperature).
The measurement > of < storage modulus (G ') and loss angle tangent (tan δ)
For middle resin layer used in above-mentioned grinding back surface adhesive tape, energy storage mould is measured by the following method
Measure (G ') and loss angle tangent (tan δ).Prepare the resin sample (500 μm of thickness) for being used for middle resin layer, uses Co., Ltd.
The determination of viscoelasticity device DMA6100 (ProductName) of high and new technology company, Hitachi measures dynamic viscoelastic, finds out energy storage mould
Amount.Determination condition: apply the shear strain of frequency 1Hz on one side, be changed to temperature from 0 DEG C on one side with 5 DEG C/min of heating rate
85 DEG C, find out loss modulus (G "), the value of storage modulus (G ') at each temperature.Loss angle tangent (tan δ) is calculated using following formula
Out.
Loss angle tangent (tan δ)=loss modulus (G ")/storage modulus (G ')
Storage modulus (G ') of the middle resin layer used in above-mentioned grinding back surface adhesive tape at 75 DEG C is 0.37
×106Pa, loss angle tangent (tan δ) are 0.30.In addition, the storage modulus (G ') at 23 DEG C is 5.62 × 106Pa, loss angle
Tangent (tan δ) is 0.08.
< grinding back surface adhesive tape joining is in the semiconductor die on piece > with convex block
As the semiconductor wafer with convex block, using the surface of 8 inch wafers (800 μm of thickness) with height below and
It is equipped at intervals with the chip of solder projection.
Solder bump height: 250 μm
Solder projection diameter: 350 μm
Solder projection spacing: 900 μm
As Belt sticking machine, using the RAD 3510 (ProductName) of LINTEC corporation, sticking temperature is set as 75 DEG C, applies on one side
Add the fixation pressure of 0.45MPa, on one side with the speed of 2.0mm/sec by grinding back surface adhesive tape joining in half with convex block
Conductor chip makes abradant sample.In this case, the thickness of middle resin layer is 1.4 times relative to bump height.
(embodiment 2)
Sticker solution A is changed to sticker solution B below to operate similarly with example 1 in addition to this, is made
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape
For 0.50N/25mm.
The production > of < sticker solution B
By 30 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
1.9mgKOH/g, hydroxyl value: 3.2mgKOH/g, molecular weight Mw:50 ten thousand, solvent: toluene) 100 mass parts, toluene di-isocyanate(TDI)
It is crosslinking agent (solid component concentration: 75 mass %) 0.24 mass parts, the mixing of 0.36 mass parts of ethyl acetate, makes solid
The sticker solution B of 30 mass % of constituent concentration.
(embodiment 3)
Sticker solution A is changed to sticker solution C below to operate similarly with example 1 in addition to this, is made
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape
For 0.33N/25mm.
The production > of < sticker solution C
By 60 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
0.1mgKOH/g, hydroxyl value: 15.0mgKOH/g, molecular weight Mw:45 ten thousand, solvent: toluene) 100 mass parts, toluene diisocynate
Ester system crosslinking agent (solid component concentration: 75 mass %) 0.6 mass parts, 72.1 mass parts of ethyl acetate are mixed, and production is solid
The sticker solution C of 35 mass % of body constituent concentration.
(embodiment 4)
Temperature by grinding back surface adhesive tape joining in the semiconductor die on piece with convex block is changed to 80 DEG C from 75 DEG C,
In addition to this, it operates similarly with example 1, makes grinding back surface adhesive tape and grinding sample.It should be noted that
Storage modulus (G ') of the middle resin layer used in above-mentioned grinding back surface adhesive tape at 80 DEG C is 0.19 × 106Pa,
Loss angle tangent (tan δ) is 0.45.In addition, the adhesion strength of above-mentioned grinding back surface adhesive tape is that 0.43N/25mm (pastes temperature
80 DEG C of degree).
(embodiment 5)
Temperature by grinding back surface adhesive tape joining in the semiconductor die on piece with convex block is changed to 55 DEG C from 75 DEG C,
In addition to this, it operates similarly with example 1, makes grinding back surface adhesive tape and grinding sample.It should be noted that
Storage modulus (G ') of the middle resin layer used in above-mentioned grinding back surface adhesive tape at 55 DEG C is 1.51 × 106Pa,
Loss angle tangent (tan δ) is 0.13.In addition, the adhesion strength of above-mentioned grinding back surface adhesive tape is that 0.22N/25mm (pastes temperature
55 DEG C of degree).
(embodiment 6)
As the thermoplastic resin of middle resin layer, ethylene-vinyl acetate copolymer resin (EVA) (acetic acid second is used
Enester (VA) content: 28 mass %, melt flow rate (MFR): 150g/10 minutes), in addition to this, operate similarly with example 1,
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion of above-mentioned grinding back surface adhesive tape
Power is 0.33N/25mm (75 DEG C of sticking temperature).In addition, middle resin layer used in above-mentioned grinding back surface adhesive tape exists
Storage modulus (G ') at 75 DEG C is 0.15 × 106Pa, loss angle tangent (tan δ) is 0.40, and storage modulus at 23 DEG C
(G ') is 6.84 × 106Pa, loss angle tangent (tan δ) are 0.08.
(embodiment 7)
As the thermoplastic resin of middle resin layer, two kinds of ethylene-acetate second that vinyl acetate content is different are used
Enoate copolymer resin (EVA) (vinyl acetate (VA) content: 32 mass %, melt flow rate (MFR): 30g/10 minutes and acetic acid
Vinyl acetate (VA) content: 42 mass %, melt flow rate (MFR): 70g/10 minutes) it is obtained with 1 to 1 quality than mixed melting
EVA (vinyl acetate (VA) content: 37 mass %, melt flow rate (MFR): 50g/10 minutes), in addition to this, with embodiment 1
It operates in the same way, makes grinding back surface adhesive tape and grinding sample.It should be noted that above-mentioned grinding back surface adhesion
The adhesion strength of adhesive tape is 0.45N/25mm (75 DEG C of sticking temperature).In addition, in used in above-mentioned grinding back surface adhesive tape
Between storage modulus (G ') of the resin layer at 75 DEG C be 0.18 × 106Pa, loss angle tangent (tan δ) they are 0.49, at 23 DEG C
Storage modulus (G ') is 4.73 × 106Pa, loss angle tangent (tan δ) are 0.08.
(embodiment 8)
The thickness of middle resin layer is changed to 300 μm, in addition to this, is operated similarly with example 1, the production back side is ground
Mill adhesive tape and grinding sample.In this case, the thickness of middle resin layer is 1.2 times relative to bump height.
It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.38N/25mm (75 DEG C of sticking temperature).
(embodiment 9)
The thickness of middle resin layer is changed to 400 μm, in addition to this, is operated similarly with example 1, the production back side is ground
Mill adhesive tape and grinding sample.In this case, the thickness of middle resin layer is 1.6 times relative to bump height.
It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.40N/25mm (75 DEG C of sticking temperature).
(embodiment 10)
The thickness of substrate is changed to 50 μm, in addition to this, is operated similarly with example 1, production grinding back surface is used viscous
Adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.45N/25mm (viscous
Paste 75 DEG C of temperature).
(embodiment 11)
The thickness of substrate is changed to 200 μm, in addition to this, is operated similarly with example 1, production grinding back surface is used viscous
Adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.23N/25mm (viscous
Paste 75 DEG C of temperature).
(embodiment 12)
The thickness of adhering agent layer is changed to 10 μm, in addition to this, is operated similarly with example 1, grinding back surface is made
With adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.18N/
25mm (75 DEG C of sticking temperature).
(embodiment 13)
The thickness of adhering agent layer is changed to 40 μm, in addition to this, is operated similarly with example 1, grinding back surface is made
With adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape is 0.48N/
25mm (75 DEG C of sticking temperature).
(comparative example 1)
Sticker solution A is changed to sticker solution D below to operate similarly with example 1 in addition to this, is made
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape
For 0.82N/25mm (75 DEG C of sticking temperature).
The production > of < sticker solution D
By 40 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
12.4mgKOH/g, hydroxyl value: 1.5mgKOH/g, molecular weight Mw:100 ten thousand, solvent: toluene), toluene di-isocyanate(TDI) system crosslinking
Agent (solid component concentration: 75 mass %) 1.2 mass parts, 15.66 mass parts of ethyl acetate are mixed, and production solid component is dense
Spend the sticker solution D of 35 mass %.
(comparative example 2)
Sticker solution A is changed to sticker solution E below to operate similarly with example 1 in addition to this, is made
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape
For 0.12N/25mm (75 DEG C of sticking temperature).
The production > of < sticker solution E
By 35 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
0.5mgKOH/g, hydroxyl value: 0.9mgKOH/g, molecular weight Mw:33 ten thousand, solvent: toluene) 100 mass parts, hexamethylene diisocyanate
Ester system crosslinking agent (solid component concentration: 100 mass %) 0.1 mass parts, 0.19 mass parts of ethyl acetate are mixed, and production is solid
The sticker solution E of 35 mass % of body constituent concentration.
(comparative example 3)
Sticker solution A is changed to adhesion agent solution F below to operate similarly with example 1 in addition to this, is made
Make grinding back surface adhesive tape and grinding sample.It should be noted that the adhesion strength of above-mentioned grinding back surface adhesive tape
For 0.52N/25mm (75 DEG C of sticking temperature).
The production > of < adhesion agent solution F
By the acrylic acid series sticker (acid value: < of 40 mass % of solid component concentration being made of acrylate copolymer
1mgKOH/g, hydroxyl value: 43mgKOH/g, molecular weight Mw:10 ten thousand, solvent: ethyl acetate, toluene) 20 mass parts, hexamethylene two
Isocyanates system crosslinking agent (solid component concentration: 100 mass %) 2.33 mass parts, the mixing of 0.32 mass parts of ethyl acetate are stirred
It mixes, makes the adhesion agent solution F of 35 mass % of solid component concentration.
(comparative example 4)
Temperature by grinding back surface adhesive tape joining in the semiconductor die on piece with convex block is changed to 85 DEG C from 75 DEG C,
In addition to this, it operates similarly with example 1, makes grinding back surface adhesive tape and grinding sample.It should be noted that
Storage modulus (G ') of the middle resin layer used in above-mentioned grinding back surface adhesive tape at 85 DEG C is 0.12 × 106Pa,
Loss angle tangent (tan δ) is 0.60.In addition, the adhesion strength of above-mentioned grinding back surface adhesive tape is that 0.45N/25mm (pastes temperature
85 DEG C of degree).
(comparative example 5)
Temperature by grinding back surface adhesive tape joining in the semiconductor die on piece with convex block is changed to 50 DEG C from 75 DEG C,
In addition to this, it operates similarly with example 1, makes grinding back surface adhesive tape and grinding sample.It should be noted that
Storage modulus (G ') of the middle resin layer used in above-mentioned grinding back surface adhesive tape at 50 DEG C is 1.88 × 106Pa,
Loss angle tangent (tan δ) is 0.13.In addition, the adhesion strength of above-mentioned grinding back surface adhesive tape is that 0.11N/25mm (pastes temperature
50 DEG C of degree).
(comparative example 6)
Sticker solution A is changed to the adhesion agent solution G below being made of ultraviolet hardening sticker, except this with
Outside, it operates similarly with example 1, makes grinding back surface adhesive tape and grinding sample.It should be noted that from above-mentioned
The substrate side of grinding back surface adhesive tape irradiates ultraviolet light (accumulated light: 300mJ/cm2) after adhesion strength be 0.02N/
25mm (75 DEG C of sticking temperature).
The production > of < adhesion agent solution G
By 33 mass % of solid component concentration be made of acrylate copolymer acrylic acid series sticker (acid value:
6.5mgKOH/g, hydroxyl value: 40.0mgKOH/g, molecular weight Mw:60 ten thousand, solvent: ethyl acetate) 100 mass parts, toluene two is different
Cyanate system crosslinking agent (solid component concentration: 45 mass %) 0.5 mass parts, 0.7 weight of alpha-alcohol ketone system Photoepolymerizationinitiater initiater
Portion, 10.3 mass parts of ethyl acetate are mixed, and make the adhesion agent solution G of 30 mass % of solid component concentration.
For the grinding back surface adhesive tape made in above-described embodiment 1~13 and comparative example 1~6 and grinding examination
Sample carries out test below, evaluates its performance.Evaluation result is recorded in following table 1~3.
< convex block tracing ability >
Grinding back surface is used from surface using the microscope " VHX-1000 " (ProductName) of Keyemce corporation
Adhesive tape joining, will be across adhesive tape observation/survey made of the semiconductor wafer surface with convex block when grinding sample
The diameter of fixed any convex block is set as rb, adhesive tape in the convex block peripheral portion can not be sealed at semiconductor wafer surface institute shape
At the diameter in the non-closely sealed portion of circle be set as ra, find out ra/rbValue, evaluate convex block tracing ability.It should be noted that about each
The measurement of diameter, 4 points of progress to all directions, using its average value as rb、raValue.
Generation rate (%) > of < grinding water (lapping rejects) intrusion
Grinding back surface adhesive tape joining is ground to use made of the semiconductor wafer surface with convex block for five pieces
Sample is ground using the silicon wafer grinder " DFG8540 " (ProductName) of disco (strain) corporation from the back side of chip
Until the thickness of chip becomes 250 μm.For the semiconductor wafer with convex block after five pieces of grinding back surfaces, micro- sem observation is used
Grinding water invades the state of wafer surface, and the generation rate of grinding water intrusion is calculated by following formula.
The generation rate (%) of grinding water intrusion=(chip block number/grinding chip block number of grinding water intrusion) × 100
Breakage rate (%) > of the semiconductor wafer with convex block after < grinding back surface
For the semiconductor wafer with convex block after five pieces of grinding back surfaces, pass through range estimation or the breakage of micro- sem observation chip
The state generated with crackle calculates the breakage rate of semiconductor wafer by following formula.
The breakage rate (%) of semiconductor wafer=(damaged chip block number/grinding chip block number) × 100
Breakage rate (%) > in the convex block portion of the semiconductor wafer with convex block after < grinding back surface
For any one piece in the semiconductor wafer with convex block after five pieces of grinding back surfaces, pass through micro- sem observation chip
Convex block portion damaged state, pass through following formula calculate semiconductor wafer convex block portion breakage rate.
The breakage rate (%) in the convex block portion of semiconductor wafer=(damaged convex block number/chip convex block number) × 100
The presence or absence of the dent generation of the semiconductor wafer with convex block after < grinding back surface >
For the semiconductor wafer with convex block after five pieces of grinding back surfaces, pass through the dent on visual observations wafer grinding surface
The presence or absence of generate.In addition, for, to the chip of dent, using the rough surface of Tylor Hobson corporation by visual observations
Degree meter " Surtoronic4 " (ProductName), measures the depth capacity Rz of dent, is determined according to benchmark below.
◎: dent is not observed by range estimation
Zero: by visual observations to dent, but depth capacity is less than 2.5 μm
×: by visual observations to dent, but depth capacity is 2.5 μm or more
The thickness deviation > of the semiconductor wafer with convex block after < grinding back surface
For the semiconductor wafer with convex block after five pieces of grinding back surfaces, dress is measured using the thickness system of ISIS corporation
Set the thickness and precision TTV (the minimum thickness of maximum gauge -) of " SemDex " (ProductName) measurement wafer face.Measuring interval is X-direction:
0.1mm, Y-direction: 10mm are measured chip whole face (range of 200mm × 200mm), are determined according to benchmark below.
Zero: TTV less than 3 μm
×: TTV is 3 μm or more
< grinding back surface removed with adhesive tape after the residue glue of the semiconductor wafer surface with convex block whether there is or not >
For the semiconductor wafer with convex block after five pieces of grinding back surfaces, pass through micro- sem observation grinding back surface adhesion glue
With removing after the semiconductor wafer surface with convex block residue glue whether there is or not.
[table 1]
[table 2]
[table 3]
As shown in Table 1 to Table 3, it is known that: embodiment 1~13 grinding back surface adhesive tape joining in band solder projection
Semiconductor wafer when, suitably follow solder projection, when in addition overleaf grinding, the generation of dent and the generation of wafer breakage
Seldom, further when removing adhesive tape, the generation of convex block portion breakage is few, can not generate residue glue in wafer surface and hold
It changes places removing, can sufficiently inhibit the deviation of the wafer thickness after grinding back surface.
In contrast, about the grinding back surface adhesive tape of comparative example 1, the acid value of sticker is high and is bonded securely
Residue glue is produced on solder projection when removing adhesive tape in the semiconductor wafer with solder projection.
The adhesion of crosslinking agent is utilized since the hydroxyl value of sticker is low about the grinding back surface adhesive tape of comparative example 2
Agent crosslinking is insufficient, therefore the cohesiveness of sticker is insufficient, and when removing adhesive tape, residue glue is produced on solder projection.
About the grinding back surface adhesive tape of comparative example 3, the hydroxyl value of sticker is high and is adhered to tape welding securely
The semiconductor wafer of material convex block produces residue glue when removing adhesive tape.
It is intermediate since tape-stripping temperature is higher than predetermined temperature about the grinding back surface adhesive tape of comparative example 4
The storage modulus of layer resin is reduced and is seamlessly embedded in the bumps of the semiconductor wafer with solder projection, in removing adhesion glue
When band, the breakage of solder projection is produced.
It is intermediate since tape-stripping temperature is lower than predetermined temperature about the grinding back surface adhesive tape of comparative example 5
The storage modulus of layer resin is high, grinds when will not follow the bumps of the semiconductor wafer with solder projection, therefore overleaf grind
Water immerses.
About the grinding back surface adhesive tape of comparative example 6, in the solder projection week of the semiconductor wafer with solder projection
Edge is mixed into air, and solidification when due to ultraviolet light irradiation is bad, causes when removing adhesive tape, produces on solder projection periphery
Residue glue is given birth to.
Industrial availability
In accordance with the invention it is possible to provide a kind of grinding back surface adhesive tape, it is being pasted on convex block, electrode protrusion etc.
When the semiconductor wafer of concaveconvex shape, convex block, electrode protrusion are suitably followed, when in addition overleaf grinding, the generation of dent, crystalline substance
The generation rate of piece breakage is minimum, and further when removing adhesive tape, convex block portion, the generation rate of electrode protrusion breakage are minimum, energy
It is enough not generate residue glue in glued face and be easily peeled off, it can sufficiently inhibit the thickness deviation of the chip after grinding back surface.
Claims (9)
1. a kind of grinding back surface adhesive tape, for substrate and the middle resin layer being sequentially formed on the substrate
With the grinding back surface adhesive tape of the semiconductor wafer of adhesion coating, which is characterized in that
The middle resin layer has 0.15 × 10 at 55~80 DEG C of any temperature6~1.51 × 106The storage modulus G ' of Pa,
The adhesion coating is constituted by making non-curable sticker as main component comprising acrylic acid series adhesion polymer, the propylene
Acid system adhesion polymer has the hydroxyl value of 2.0mgKOH/g acid value below and 1.0~15.0mgKOH/g.
2. grinding back surface adhesive tape according to claim 1, the middle resin layer, which has, is present in semiconductor die
1.2 times or more of thickness of the difference of height of the concaveconvex shape on piece surface.
3. grinding back surface adhesive tape according to claim 1 or 2, the middle resin layer includes ethylene-acetate second
Enoate copolymer EVA and formed.
4. grinding back surface adhesive tape described in any one of claim 1 to 3, the ethane-acetic acid ethyenyl ester is total
Polymers contains the vinyl acetate of 25~40 mass %.
5. grinding back surface adhesive tape according to claim 1 or 2, the substrate has 50~200 μm of thickness.
6. grinding back surface adhesive tape according to any one of claims 1 to 5, the adhesion coating has 5~50 μm
Thickness.
7. grinding back surface adhesive tape described according to claim 1~any one of 6 is being pasted on the semiconductor wafer
Surface and using microscope from surface from when, if by observed by adhesive tape/diameter of convex block that measures is set as
rb, adhesive tape in the convex block peripheral portion can not be sealed at semiconductor wafer surface and the diameter in the non-closely sealed portion of circle that is formed
It is set as ra, then ra/rbValue be 1.15~1.50.
8. grinding back surface adhesive tape according to any one of claims 1 to 7 is present in the semiconductor wafer table
The difference of height of the concaveconvex shape in face is 50~300 μm.
9. grinding back surface adhesive tape described according to claim 1~any one of 8, by the adhesive tape joining in
Any temperature that sticking temperature when the semiconductor wafer is 55~80 DEG C.
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| JP2018-046374 | 2018-03-14 | ||
| JP2018046374A JP7092526B2 (en) | 2018-03-14 | 2018-03-14 | Adhesive tape for back grind |
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| CN110272696B CN110272696B (en) | 2022-12-23 |
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| JP (1) | JP7092526B2 (en) |
| KR (1) | KR102585832B1 (en) |
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| CN115397614A (en) * | 2020-03-26 | 2022-11-25 | 富士纺控股株式会社 | Polishing pad, polishing unit, polishing apparatus, and method for manufacturing polishing pad |
| CN115605556A (en) * | 2020-05-22 | 2023-01-13 | 三井化学东赛璐株式会社（Jp） | Adhesive laminated film and method for manufacturing electronic device |
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| JP6678795B1 (en) * | 2019-04-08 | 2020-04-08 | 古河電気工業株式会社 | Electronic component tape and electronic component processing method |
| JP7569812B2 (en) | 2020-02-05 | 2024-10-18 | アールエム東セロ株式会社 | Suction assistant film and semiconductor wafer suction method |
| JP7563039B2 (en) | 2020-08-17 | 2024-10-08 | 東ソー株式会社 | Resin composition, modifier and composition containing the modifier |
| JPWO2022250128A1 (en) * | 2021-05-28 | 2022-12-01 | ||
| EP4350742A1 (en) * | 2021-05-28 | 2024-04-10 | Mitsui Chemicals Tohcello, Inc. | Method for producing electronic device |
| WO2022250129A1 (en) * | 2021-05-28 | 2022-12-01 | 三井化学東セロ株式会社 | Method for producing electronic device |
| US11898071B2 (en) * | 2021-06-21 | 2024-02-13 | Nitto Denko Corporation | Pressure-sensitive adhesive sheet for semiconductor wafer processing |
| KR102411362B1 (en) * | 2021-07-09 | 2022-06-22 | 구동필 | Adhesion film for wafer back grinding and its manufacturing method |
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| TWI806973B (en) | 2023-07-01 |
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| CN110272696B (en) | 2022-12-23 |
| KR20190108503A (en) | 2019-09-24 |
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| JP7092526B2 (en) | 2022-06-28 |
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