CN110268630A - Revolution for high side switches controls - Google Patents
Revolution for high side switches controls Download PDFInfo
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- CN110268630A CN110268630A CN201880011210.7A CN201880011210A CN110268630A CN 110268630 A CN110268630 A CN 110268630A CN 201880011210 A CN201880011210 A CN 201880011210A CN 110268630 A CN110268630 A CN 110268630A
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- side switches
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- 239000003990 capacitor Substances 0.000 claims abstract description 69
- 238000005070 sampling Methods 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 33
- 230000005611 electricity Effects 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000009286 beneficial effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 240000002853 Nelumbo nucifera Species 0.000 description 3
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 3
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0029—Circuits or arrangements for limiting the slope of switching signals, e.g. slew rate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/096—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
Disclose a kind of circuit that the rotational speed for high side switches controls.The circuit includes sample and level shift circuit.The sample and level shift circuit are connected to the high side switches.The circuit further includes sampling capacitor, and the sampling capacitor is configured to be sampled the input voltage for corresponding to the sample and level shift circuit.In addition, the circuit includes charge-limited circuit.The sampling capacitor is configured to charge to the grid capacitance of the high side switches.The charge-limited circuit is configured to limit the speed of the charge for the grid capacitance for being transferred to the high side switches per unit time.
Description
Technical field
This disclosure relates to the switch based on transistor, and more particularly, to the revolution control for high side switches.
Apply for priority
This application claims the India submitted on April 10th, 2017 application 201711012738 priority, this application it is interior
Hold accordingly to be incorporated by herein.
Background technique
High side switches can be used in driving various loads, and can be consequently used in many different applications.For driving
The canonical system and method for dynamic high side switches utilize charge pump.Charge pump is DC to DC converter, and the DC to DC converter is used
Capacitor generates the power supply of high voltage or lower voltage as energy-storage travelling wave tube.About high side switches, in addition to for being applied to drive
Except the DC electric current of dynamic high side switches, also relies on charge pump and supply other circuit blocks (such as amplifier).This method needs
Large capacitor is used in charge pump, to supply DC load current.If necessary to integrated solution on chip, large capacitor can
Occupy valuable surface area.In order to solve this problem, some systems realize external capacitor, to supply DC electric current.Although this
The required surface area of chip is reduced, but includes then additional pin, to connect external capacitor.Use charge pump design
With for driving, high side switches are unfavorable for needing the case where reducing chip size or cost sensitivity and therefore need to reduce inserts
The situation of foot number.In addition, being unfavorable for needing external component as few as possible (such as, external capacitor) using charge pump design
Situation, because external component also increases integral material inventory (BOM) and cost.
In general, high side switches include three main elements: passing through element, grid control block and input logic block.It is logical
Crossing element is usually transistor, which is usually Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or laterally expands
Dispersed metallic oxide semi conductor transistor (LDMOS).Ldmos transistor is considered as a type of MOSFET.Pass through element
It operates in linear region, the electric current from power supply is transmitted to load.Grid control block is supplied to by the grid of element
Voltage should be switched to " on " or "off" by element.Input logic block explains on/off signal and triggers grid
Control block will be switched to " on " or "off" by element.
In electronic device, rotational speed is defined as voltage change per unit time.More than the rotational speed energy of circuit
Enough lead to distorted signals.In addition, being more than the amount increase that rotational speed can result in electromagnetic radiation (EME), so that it is simultaneous to violate electromagnetism
Capacitive (EMC) standard, and may interfere with other electronic devices.Therefore, rotational speed can cause the operation of corresponding circuits
It significantly limits.Addition demand limiter is capable of providing certain control to rotational speed, but the solution is big there is still a need for using
Charge pump.
Fig. 1 is the circuit-level signal of the known system and method for driving high side switches using extra current limiter
Figure.As shown, charge pump 2 is connected to current controller 4.Current controller 4 includes amplifier 6 and transistor 10.Herein, institute
Transistor 10 is p-channel metal-oxide semiconductor (MOS) (pMOS).Current controller 4 is supplied by charge pump 2, and based on by
The voltage difference that resistor 12,24 generates comes control output end.The positive rail of amplifier 6 is powered by charge pump 2, and amplifier 6
Negative rail powered by supply voltage 8.Current-sense resistor 12 connects between charge pump 2 and amplifier 6.Current sense
FET 14 is connected between amplifier 6 and output pin 18.High side switches FET16 has drain side, which is connected to electricity
Lotus pump 2, gate electrode side is connected to the output end of amplifier 6 via transistor 10, and source side is connected to output pin 18.Output
Pin 18 is for connecting the system to circuit load 20.In addition, resistor 32 connects between the gate electrode side and source side of FET 16
It connects.Circuit further includes clock generator 22.Resistor 24 connects between charge pump 2 and amplifier 6.Circuit further includes load base
Standard 26.In addition as shown, FET 28 and resistor 30 are connected in series for when high side switches FET 16 is 'switched '.Electric current
Limiter 34 is for providing certain control to the rotational speed of high side switches FET 16.
Referring also to Fig. 1, charge pump 2 needs to transmit significantly due to its connection with amplifier 6 and high side switches FET 16
Export electric current.Using current controller 4 by the grid quick charge of high side switches to required voltage VGS, drawn greatly from charge pump 2
Measure electric current.Therefore, charge pump 2 includes relatively large capacitor, is made it difficult in the circuit integration to one single chip by Fig. 1.Greatly
Integrated capacitor increases die size, and thereby increases product cost.If large capacitor is located at outside, become to need
Additional pins are wanted, and any external capacitor can increase BOM cost, to increase the cost of whole system.Use current limit
The rotational speed that device 34 controls high side switches FET 16 results in the need for large charge pump 2.
Therefore, it is necessary to a kind of for controlling the improved system and method for the rotational speed of high side switches.
Summary of the invention
Via the presently disclosed system (including sampling and level shift circuit) for controlling high side switches rotational speed
Meet aforementioned needs with method.
Disclose a kind of exemplary circuit that the rotational speed for high side switches controls.The circuit includes sample and level
Shift circuit.Sample and level shift circuit are connected to high side switches.Circuit further includes sampling capacitor, and sampling capacitor
It is configured to be sampled the input voltage for corresponding to sample and level shift circuit.In addition, circuit includes that can be achieved as electricity
The charge-limited mechanism on road.Sampling capacitor is configured to charge to the grid capacitance of high side switches.Charge-limited mechanism
It is configured to limit the speed of the charge for the grid capacitance for being transferred to high side switches per unit time.
It discloses a kind of for controlling the illustrative methods of the rotational speed of high side switches.This method includes to sample and electricity
Translational shifting circuit supplies input current.This method further includes being sampled to input voltage.Sampling capacitor is configured for defeated
Enter the sampling of voltage.In addition, this method includes carrying out level shift to input voltage.This method includes using sampling capacitor pair
The grid capacitance of high side switches charges.In addition, this method includes charge of the supply on restriction to sampling capacitor, the charge by
To the limitation of at least one current slot.
Detailed description of the invention
Fig. 1 is the signal for driving the known system of high side switches and the circuit-level of method for using demand limiter
Figure.
Fig. 2 is an embodiment according to the system and method for the rotational speed for controlling high side switches of the disclosure
Circuit-level schematic diagram.
Fig. 3 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.
Fig. 4 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.
Fig. 5 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.
Specific embodiment
Before explaining in detail any embodiment of the invention, it should be understood that the present invention be not limited in its application with
The structure detail and component layout for proposing in lower description or showing in the following figures.The present invention can have other embodiment party
Case, and can be practiced or carried out in various ways.In addition, it will be appreciated that the phraseology and terminology used herein are for retouching
The purpose stated, and be not considered as restrictive.The use purport of "include", "comprise" herein or " having " and its modification
Covering items listed thereafter and its equivalent and addition item.Unless specified or limited otherwise, otherwise term " installation ",
" connection ", " support " and " connection " and its variations are widely used, and cover and both be mounted directly and install indirectly, even
It connects, support and couples.In addition, " connection " and " connection " is not limited to physics or mechanical connection or connection.
Following discussion is presented to enable those skilled in the art to manufacture and use embodiment of the present invention.To shown
The various modifications of embodiment will be readily apparent to those of skill in the art, and the General Principle of this paper can be applied
In other embodiments and application without departing from embodiment of the present invention.Therefore, embodiment of the present invention is not intended to limit
The embodiment shown in, but should meet and the consistent widest range of principles and features disclosed herein.In detail below
Embodiment will be read with reference to attached drawing, and in different attached drawings, similar element has similar appended drawing reference.It is not necessarily to scale
The attached drawing of drafting shows selected embodiment, and is not intended to be limited to the range of embodiment of the present invention.Technology people
Member is it will be recognized that example provided herein has many useful alternatives fallen into the range of embodiment of the present invention
Case.
The embodiment of the disclosure provides the system and method for the rotational speed for controlling high side switches, which opens
It closes for being selectively supplied with electric power to output loading.
Fig. 2 is an embodiment according to the system and method for the rotational speed for controlling high side switches of the disclosure
Circuit-level schematic diagram.In one embodiment, it is possible to provide sample and level shift circuit 40.Sample and level shift electricity
Road 40 may be connected to voltage supply 42.Voltage supply 42 can be the output end of amplifier (for example, operational amplifier).It may be selected
Ground, voltage supply 42 can supply fixed or variable supply voltage.In certain embodiments, voltage supply 42 is 1.8 volts, 2.5
Volt, 3.3 volts or 5 volts may be beneficial.Selectively, any other voltage level can be supplied 42 supplies by voltage.Sample and
Level shift circuit 40 may include multiple switch 50,52,54,56.Sample and level shift circuit 40 may also include sampling capacitor
Device 58.In addition, sample and level shift circuit 40 may include field effect transistor (FET) 60.Turning round control piece 80 may include electricity
Chute 82,84,86, these current slots can be connected in parallel.Revolution control piece 80 can be connected in parallel with FET 60.
In a non-limiting example, as shown in Fig. 2, high side switches 70 can be n-channel metal-oxide semiconductor (MOS)
Field effect transistor (nMOS transistor) or n-channel LDMOS transistor (nLDMOS transistor).
NLDMOS transistor is considered as a type of nMOS transistor.It in some cases, can using different types of transistor
It can be beneficial.One output end of sample and level shift circuit 40 may be connected to the gate electrode side of high side switches 70.Flash is opened
The drain side for closing 70 may be connected to voltage supply 48.Output pin 72 may be connected to circuit load.In certain non-limiting implementations
In scheme, lower edge switch can be included and be connected to output pin 72, so that high side switches 70 and lower edge switch constitute half-bridge
Configuration.
Referring still to Fig. 2, when driving high side switches 70, sample and level shift circuit 40 can eliminate the need to charge pump
It wants.The voltage that sampling capacitor 58 can supply 42 to voltage is sampled.Then, sampling capacitor 58 can be used for high side switches
70 grid lateral capacitance charges.The charging of grid lateral capacitance can make 70 " on " of high side switches.In a non-limiting reality
It applies in scheme, when 70 " on " of high side switches, input voltage supplying to circuit can be loaded.
In another non-limiting embodiment, the grid capacitance of high side switches 70 can be used as holding capacitor device.Therefore,
Holding capacitor device may not be needed DC load.Sample and level shift circuit 40 can not supply any DC electric current.It is non-at another
In restricted embodiment, explicit holding capacitor device can be connected in parallel with the grid capacitance of high side switches 70.Equally, holding capacitor
Device may not be needed DC load.
In certain non-limiting embodiments, with charge pump power amplifier on the contrary, voltage supply 48,42 for
Answer fixed voltage.In the case where amplifier is used as voltage supply 42, amplifier can be used as short circuit current controller.In certain feelings
It the use of different amplifier configurations or different types of amplifier may be beneficial under condition.In some cases, including amplify
Device may be it is beneficial, the amplifier be configured in common-mode voltage range from voltage supply 48 drops to than voltage supply 48
Low several volts and work.Amplifier can be designed specifically to handle high common mode input and low output common mode electricity
Pressure.
It in some cases, may be beneficial, 48,42 3.3 volts of supply of these voltages supply including voltage supply 48,42
Voltage.Selectively, voltage supply 48,42 can supply any other predetermined voltage level, including 5 volts, 12 volts, 14 volts, 24 volts
With 48 volts of voltage.In some cases, at least one voltage that Vehicular battery is used in voltage supply 48,42 is supplied may
It is beneficial.In some cases, at least one voltage supply that voltage is supplied in 48,42 has in 4.5 volts to 60 volts ranges
Interior supply voltage may be beneficial.In one non-limiting embodiment, voltage supply 48,42 can be configured to pre-
The voltage (i.e. ramp voltage) that interior increase of fixing time respectively is supplied.
In one non-limiting embodiment, disclosed system can be the integrated circuit on one single chip.It is integrated
1/3 of the chip list area as used in charge pump system as shown in Figure 1 can be used in circuit.Selectively, disclosed to be
As used in charge pump system as shown in Figure 1 up to 99% chip list area can be used in system.In some cases, will
It may be beneficial that sampling capacitor 58, which is specifically comprised in the integrated circuit on one single chip,.In a non-limiting implementation
In scheme, sampling capacitor 58 is smaller than capacitor associated with charge pump system shown in FIG. 1.In some non-limiting realities
It applies in scheme, sampling capacitor can be in the capacitance range of 2pF to 250pF.
In one non-limiting embodiment, the quantity of pin included by the disclosure is smaller than electricity as shown in Figure 1
The quantity of pin included by lotus pumping system.In a non-limiting example, the disclosure may include charge such as shown in FIG. 1
Few one pin of pumping system.In another non-limiting example, the disclosure may include charge pump system such as shown in FIG. 1
It is up to three pins less.
In one non-limiting embodiment, current slot 82,84,86 can be controlled respectively and is stored in sampling capacitor 58
Charge amount.It is being operated by which of selection current slot 82,84,86 current slot, high side switches 70 also may be selected
Charging rotational speed.Therefore, each of current slot 82,84,86 current slot may both correspond to high side switches 70 not
It charges with rotational speed.When not needing rotational speed control, FET 60 can be used for making each of current slot 82,84,86
Current slot short circuit.It, may be to the V of high side switches 70 by controlling the amount for the charge being stored in sampling capacitor 58GSCharging
Speed is controlled.When FET 60 keeps current slot 82,84,86 short-circuit, sampling capacitor 58 can reach fully charged and right
The rotational speed that high side switches 70 charge is relatively high.The rotational speed of high side switches 70 can be programmable.
Fig. 3 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.In one embodiment, it is possible to provide sample and level shift circuit 40.Sample and level shift
Circuit 40 may be connected to voltage supply 42.Voltage supply 42 can be the output end of amplifier (for example, operational amplifier).It is optional
Ground is selected, voltage supply 42 can supply fixed or variable supply voltage.In certain embodiments, voltage supply 42 be 1.8 volts,
2.5 volts, 3.3 volts or 5 volts may be beneficial.Selectively, any other voltage level can be supplied 42 supplies by voltage.Sample
It may include multiple switch 50,52,54,56 with level shift circuit 40.Sample and level shift circuit 40 may also include sampling electricity
Container 58.In addition, sample and level shift circuit 40 may include field effect transistor (FET) 60.Turning round control piece 88 may include
At least one current slot 82, the current slot are tunable.Revolution control piece 88 can be connected in parallel with FET 60.
In a non-limiting example, as shown in figure 3, high side switches 70 can be n-channel metal-oxide semiconductor (MOS)
Field effect transistor (nMOS transistor) or n-channel LDMOS transistor (nLDMOS transistor).
NLDMOS transistor is considered as a type of nMOS transistor.It in some cases, can using different types of transistor
It can be beneficial.One output end of sample and level shift circuit 40 may be connected to the gate electrode side of high side switches 70.Flash is opened
The drain side for closing 70 may be connected to voltage supply 48.Output pin 72 may be connected to circuit load.In certain non-limiting implementations
In scheme, lower edge switch can be included and be connected to output pin 72, so that high side switches 70 and lower edge switch constitute half-bridge
Configuration.
Referring still to Fig. 3, when driving high side switches 70, sample and level shift circuit 40 can eliminate the need to charge pump
It wants.The voltage that sampling capacitor 58 can supply 42 to voltage is sampled.Then, sampling capacitor 58 can be used for high side switches
70 grid lateral capacitance charges.The charging of grid lateral capacitance can make 70 " on " of high side switches.In a non-limiting reality
It applies in scheme, when 70 " on " of high side switches, input voltage supplying to circuit can be loaded.
In one non-limiting embodiment, current slot 82 controls the amount for the charge being stored in sampling capacitor 58.
By selecting current slot 82, the rotational speed of the charging of high side switches 70 also may be selected.When not needing rotational speed control,
FET 60 can be used for keeping current slot 82 short-circuit.It, may be to flash by controlling the amount for the charge being stored in sampling capacitor 58
The V of switch 70GSCharging rate controlled.When FET 60 keeps current slot 82 short-circuit, sampling capacitor 58 be can reach completely
Charging, and the rotational speed to charge to high side switches 70 is relatively high.The rotational speed of high side switches 70 can be programmable
's.
Referring to figs. 2 and 3, it is obvious that when at least one current slot 82 is implemented, any amount can be able to achieve
Current slot.Referring to fig. 2, a non-restrictive illustrative embodiment includes three current slots 82,84,86 being connected in parallel.
Alternatively it may include any number of current slot being connected in parallel.Any one current slot in current slot 82,84,86
It is tunable and selectable.
Fig. 4 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.In one embodiment, it is possible to provide sample and level shift circuit 90.Sample and level shift
Circuit 90 may be connected to voltage supply 42.Voltage supply 42 can be the output end of amplifier (for example, operational amplifier).It is optional
Ground is selected, voltage supply 42 can supply fixed or variable supply voltage.In certain embodiments, voltage supply 42 for 1.8 volts,
2.5 volts, 3.3 volts or 5 volts may be beneficial.Selectively, any other voltage level can be supplied 42 supplies by voltage.Sample
It may include multiple switch 50,52,54,56 with level shift circuit 40.Sample and level shift circuit 40 may also include sampling electricity
Container 92.Revolution control can be realized via sampling capacitor 92.
In a non-limiting example, as shown in figure 4, high side switches 70 can be n-channel metal-oxide semiconductor (MOS)
Field effect transistor (nMOS transistor) or n-channel LDMOS transistor (nLDMOS transistor).
NLDMOS transistor is considered as a type of nMOS transistor.It in some cases, can using different types of transistor
It can be beneficial.One output end of sample and level shift circuit 40 may be connected to the gate electrode side of high side switches 70.Flash is opened
The drain side for closing 70 may be connected to voltage supply 48.Output pin 72 may be connected to circuit load.In certain non-limiting implementations
In scheme, lower edge switch can be included and be connected to output pin 72, so that high side switches 70 and lower edge switch constitute half-bridge
Configuration.
Referring still to Fig. 4, when driving high side switches 70, sample and level shift circuit 90 can eliminate the need to charge pump
It wants.The voltage that sampling capacitor 92 can supply 42 to voltage is sampled.Then, sampling capacitor 92 can be used for high side switches
70 grid lateral capacitance charges.The charging of grid lateral capacitance can make 70 " on " of high side switches.In a non-limiting reality
It applies in scheme, when 70 " on " of high side switches, input voltage supplying to circuit can be loaded.
In one non-limiting embodiment, sampling capacitor 92 can be adjustable.It in some cases, including can
It may be beneficial for adjusting sampling capacitor 92, because sampling capacitor 92 can then serve as charge-limited mechanism.In the non-limit
In property embodiment processed, sampling capacitor corresponds to sample and level shift circuit.Therefore, the capacitor for adjusting sampling capacitor 92 can
Realize the revolution control of high side switches 70.
Fig. 5 is another embodiment party according to the system and method for the rotational speed for controlling high side switches of the disclosure
The schematic diagram of the circuit-level of case.In one embodiment, it is possible to provide sample and level shift circuit 96.Sample and level shift
Circuit 96 may be connected to voltage supply 98.Sample and level shift circuit 40 may include multiple switch 50,52,54,56.Sample and
Level shift circuit 40 may also include sampling capacitor 58.
In a non-limiting example, as shown in figure 5, high side switches 70 can be n-channel metal-oxide semiconductor (MOS)
Field effect transistor (nMOS transistor) or n-channel LDMOS transistor (nLDMOS transistor).
NLDMOS transistor is considered as a type of nMOS transistor.It in some cases, can using different types of transistor
It can be beneficial.One output end of sample and level shift circuit 96 may be connected to the gate electrode side of high side switches 70.Flash is opened
The drain side for closing 70 may be connected to voltage supply 48.Output pin 72 may be connected to circuit load.In certain non-limiting implementations
In scheme, lower edge switch can be included and be connected to output pin 72, so that high side switches 70 and lower edge switch constitute half-bridge
Configuration.
Referring still to Fig. 5, when driving high side switches 70, sample and level shift circuit 96 can eliminate the need to charge pump
It wants.The voltage that sampling capacitor 96 can supply 98 to voltage is sampled.Then, sampling capacitor 96 can be used for high side switches
70 grid lateral capacitance charges.The charging of grid lateral capacitance can make 70 " on " of high side switches.In a non-limiting reality
It applies in scheme, when 70 " on " of high side switches, input voltage supplying to circuit can be loaded.
Voltage supply 98 can supply fixed or variable supply voltage.In certain embodiments, voltage supply 42 is 1.8
Volt, 2.5 volts, 3.3 volts or 5 volts may be beneficial.Selectively, any other voltage level can be supplied 42 supplies by voltage.
In one non-limiting embodiment, voltage supply 98 can be configured to increase supplied voltage in the given time (i.e.
Ramp voltage).In one non-limiting embodiment, voltage supply 98 can be used as charge-limited mechanism.Adjustable voltage supplies
The voltage for corresponding to and charging to sampling capacitor can be limited by answering 98.Therefore, it can control the rotational speed of high side switches.
In one non-limiting embodiment, revolution control circuit may include other kinds of charge-limited mechanism.Electricity
Lotus limiting mechanism can limit the sampling current of sampling capacitor 58.In certain non-limiting embodiments, charge-limited mechanism
The sampling voltage of sampling capacitor 58 can be limited.Sampling current can be in the range of 5 μ A to 5mA.Sampling voltage can be in final mesh
In the range of mark gate source voltage 0% to 100%.Charge-limited mechanism can be configured to limitation and correspond to sample and level shifting
The frequency of position circuit.
Although it will be understood by those of skill in the art that being carried out above in association with specific embodiment and example to the present invention
Description, but the present invention might not be limited so, and other each embodiments, example, using, from embodiment, example,
The modifications and variations used are intended to be covered by the appended claims.All public affairs of herein cited each patent and publication
It opens content to be herein incorporated by reference, as each such patent or publication are incorporated by herein.
Various feature and advantage of the invention are elaborated in following following claims.
Claims (23)
1. a kind of rotational speed control circuit for high side switches, the circuit include:
Sample and level shift circuit, the sample and level shift circuit are connected to the high side switches；
Charge-limited circuit；With
Sampling capacitor, the sampling capacitor are configured to:
The input voltage for corresponding to the sample and level shift circuit is sampled；And
It charges to the grid capacitance of the high side switches；And
Wherein the charge-limited circuit is configured to limit the grid capacitance for being transferred to the high side switches per unit time
The speed of charge.
2. circuit according to claim 1, wherein the charge-limited circuit, which is further configured to limitation, corresponds to institute
State the electric current of sampling capacitor.
3. circuit according to claim 1, wherein the charge-limited circuit, which is further configured to limitation, corresponds to institute
State the voltage of sampling capacitor.
4. circuit according to any one of claim 1-3, wherein the charge-limited circuit is further configured to limit
System corresponds to the sampling capacitor of the sample and level shift circuit.
5. circuit according to any one of claim 1-3, wherein the charge-limited circuit is further configured to limit
System corresponds to the frequency of the sample and level shift circuit.
6. circuit according to any one of claims 1-5, wherein the high side switches are that n-channel metal oxide is partly led
Body field effect transistor (nMOS transistor).
7. circuit according to claim 1 to 6, wherein being used for the rotational speed control of the high side switches
Circuit processed is the integrated circuit on one single chip.
8. circuit described in any one of -7 according to claim 1, wherein the charge-limited circuit includes that adjustable voltage supplies
It answers.
9. circuit according to claim 1 to 8, wherein the charge-limited circuit includes the sampling capacitor
Device.
10. circuit according to claim 1 to 9, in which:
The sampling capacitor is adjustable sampling capacitor；And
The charge-limited circuit includes the sampling capacitor.
11. a kind of method for controlling the rotational speed of high side switches, which comprises
Input current is supplied to sample and level shift circuit；
Using being configured for being sampled input voltage the sampling capacitor that the input voltage is sampled；
Level shift is carried out to the input voltage；
It is charged using grid capacitance of the sampling capacitor to the high side switches；And
The charge of the sampling capacitor is given in supply on restriction, and the charge is limited by least one current slot.
12. according to the method for claim 11, further includes: transistor and at least one described current slot are connected in parallel,
And the transistor is connected to remove any charge-limited for corresponding at least one current slot.
13. method described in any one of 1-12 according to claim 1 further includes corresponding to different high side switches revolution speed
Degree selects a current slot at least one described current slot or at least one described current slot.
14. method described in any one of 1-13 according to claim 1 further includes the electricity that limitation corresponds to the sampling capacitor
Stream.
15. method described in any one of 1-13 according to claim 1 further includes the electricity that limitation corresponds to the sampling capacitor
Pressure.
16. method described in any one of 1-15 according to claim 1 further includes that limitation corresponds to the sample and level shift
The sampling capacitor of circuit.
17. method described in any one of 1-16 according to claim 1 further includes that limitation corresponds to the sample and level shift
The frequency of circuit.
18. method described in any one of 1-17 according to claim 1, wherein the high side switches are n-channel metal oxide
Semiconductor field effect transistor (nMOS transistor).
19. method described in any one of 1-18 according to claim 1, wherein the rotational speed is by integrated on one single chip
Circuit control.
20. method described in any one of 1-19 according to claim 1, wherein charge-limited is supplied by adjustable voltage and is executed.
21. method described in any one of 1-20 according to claim 1, wherein charge-limited is also held by the sampling capacitor
Row.
22. a kind of switchgear, comprising:
High side switches；With
Any one circuit in circuit described in -10 according to claim 1.
23. a kind of microcontroller, comprising:
High side switches；With
Any one circuit in circuit described in -10 according to claim 1.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN201711012738 | 2017-04-10 | ||
| IN201711012738 | 2017-04-10 | ||
| US15/916,421 US10516333B2 (en) | 2018-03-09 | 2018-03-09 | Slew control for high-side switch |
| US15/916,421 | 2018-03-09 | ||
| PCT/US2018/026686 WO2018191154A1 (en) | 2017-04-10 | 2018-04-09 | Slew control for high-side switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110268630A true CN110268630A (en) | 2019-09-20 |
| CN110268630B CN110268630B (en) | 2023-09-05 |
Family
ID=63711294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880011210.7A Active CN110268630B (en) | 2017-04-10 | 2018-04-09 | Swing control for high side switch |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102498234B1 (en) |
| CN (1) | CN110268630B (en) |
| TW (1) | TW201842725A (en) |
| WO (1) | WO2018191154A1 (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742193A (en) * | 1996-10-24 | 1998-04-21 | Sgs-Thomson Microelectronics, Inc. | Driver circuit including preslewing circuit for improved slew rate control |
| US20060164872A1 (en) * | 2005-01-21 | 2006-07-27 | Sanken Electric Co., Ltd. | Switching power source device of resonance type |
| CN101196631A (en) * | 2006-12-04 | 2008-06-11 | 恩益禧电子股份有限公司 | Capacitive load driving circuit, method for driving capacitive load, and method for driving liquid crystal display device |
| US20140159687A1 (en) * | 2012-12-07 | 2014-06-12 | Samsung Electronics Co., Ltd. | Adaptive Power Converters and Methods of Operating the Same |
| US9240780B1 (en) * | 2014-07-21 | 2016-01-19 | Continental Automotive Systems, Inc. | Preventing voltage pulse propagation in a disabled capacitive feedback slew-controlled switch |
| CN107078736A (en) * | 2014-10-10 | 2017-08-18 | 宜普电源转换公司 | The QRR of high voltage zero bootstrapping supply |
| CN107820679A (en) * | 2015-06-11 | 2018-03-20 | Ksr Ip控股有限责任公司 | DV/DT controls in MOSFET gate drivers |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258662A (en) * | 1992-04-06 | 1993-11-02 | Linear Technology Corp. | Micropower gate charge pump for power MOSFETS |
| US6566827B2 (en) | 2000-11-09 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Disk drive apparatus and motor |
| JP4168836B2 (en) * | 2003-06-03 | 2008-10-22 | ソニー株式会社 | Display device |
| JP2012109916A (en) * | 2010-11-19 | 2012-06-07 | Sanken Electric Co Ltd | Load drive circuit |
| TWI465013B (en) * | 2012-03-15 | 2014-12-11 | Univ Nat Chiao Tung | High-side driver circuit |
| JP6046988B2 (en) * | 2012-11-19 | 2016-12-21 | ローム株式会社 | Switch drive circuit |
-
2018
- 2018-04-09 KR KR1020197022569A patent/KR102498234B1/en active Active
- 2018-04-09 WO PCT/US2018/026686 patent/WO2018191154A1/en active Application Filing
- 2018-04-09 CN CN201880011210.7A patent/CN110268630B/en active Active
- 2018-04-10 TW TW107112217A patent/TW201842725A/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742193A (en) * | 1996-10-24 | 1998-04-21 | Sgs-Thomson Microelectronics, Inc. | Driver circuit including preslewing circuit for improved slew rate control |
| US20060164872A1 (en) * | 2005-01-21 | 2006-07-27 | Sanken Electric Co., Ltd. | Switching power source device of resonance type |
| CN101196631A (en) * | 2006-12-04 | 2008-06-11 | 恩益禧电子股份有限公司 | Capacitive load driving circuit, method for driving capacitive load, and method for driving liquid crystal display device |
| US20140159687A1 (en) * | 2012-12-07 | 2014-06-12 | Samsung Electronics Co., Ltd. | Adaptive Power Converters and Methods of Operating the Same |
| US9240780B1 (en) * | 2014-07-21 | 2016-01-19 | Continental Automotive Systems, Inc. | Preventing voltage pulse propagation in a disabled capacitive feedback slew-controlled switch |
| CN107078736A (en) * | 2014-10-10 | 2017-08-18 | 宜普电源转换公司 | The QRR of high voltage zero bootstrapping supply |
| CN107820679A (en) * | 2015-06-11 | 2018-03-20 | Ksr Ip控股有限责任公司 | DV/DT controls in MOSFET gate drivers |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018191154A1 (en) | 2018-10-18 |
| KR102498234B1 (en) | 2023-02-09 |
| TW201842725A (en) | 2018-12-01 |
| CN110268630B (en) | 2023-09-05 |
| KR20190133665A (en) | 2019-12-03 |
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