CN110265522B - Display panel, display device, and manufacturing method of display panel - Google Patents

Abstract

The present invention provides a display panel, a display device and a manufacturing method of the display panel. The display panel includes a base substrate, a transistor array layer, a miniature light-emitting diode, and a negative photoresist layer; the transistor array layer is located on the base substrate; the transistor array layer includes a conductive pad on the side away from the base substrate; the miniature light-emitting diode, the negative light The resistive layers are all located on the side of the transistor array layer away from the base substrate; the conductive pads are electrically connected with the miniature light emitting diodes; the negative photoresist layer surrounds the miniature light emitting diodes. The transistor array layer drives the micro light-emitting diodes to emit light. The negative photoresist layer contacts the light emitting diodes, thereby fixing the micro light emitting diodes; the negative photoresist layer has a strong force for fixing the micro light emitting diodes, so as to prevent the micro light emitting diodes from easily detaching from the conductive pads on the transistor array layer. The transfer of the micro light-emitting diode will not collide with other film layers except the conductive pad on the side of the transistor array layer away from the substrate, and the transfer of the micro light-emitting diode will not cause damage.

Description

Display panel, display device, and method for manufacturing display panel

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of display, in particular to a display panel, a display device and a manufacturing method of the display panel.

[ background of the invention ]

Display panels used in mobile phones, tablet computers, and televisions mainly include liquid crystal display panels and organic light emitting display panels. However, the resolution and stability required by wearable devices, 3D projection devices, and VR/AR display devices are higher and higher, and the liquid crystal display panel and the organic light emitting display panel cannot meet the requirement of a high resolution display screen due to processes and materials, so the research and development and manufacturing of the micro light emitting diode display screen are more and more important. The micro light-emitting diode display screen refers to a high-density light-emitting diode array with small scale integrated on a panel, and the light-emitting diodes are positioned in pixels of the display screen, so that each pixel can be addressed and independently driven to be lightened, and the interval between the pixels is reduced from millimeter level to micron level. However, in the prior art, the yield of the micro light emitting diode is not good.

[ summary of the invention ]

In order to solve the above technical problems, the present invention provides a display panel, a display device, and a method of manufacturing the display panel.

In a first aspect, the present invention provides a display panel, including a substrate, a transistor array layer, a micro light emitting diode, and a negative photoresist layer;

the transistor array layer is positioned on the substrate base plate;

the transistor array layer comprises a conductive bonding pad at one side far away from the substrate base plate;

the micro light-emitting diode and the negative photoresist layer are both positioned on one side of the transistor array layer, which is far away from the substrate;

the conductive bonding pad is electrically connected with the micro light-emitting diode;

the negative photoresist layer surrounds the micro light emitting diode.

Optionally, the negative photoresist layer surrounds the conductive pad.

Optionally, a surface of the micro light emitting diode on a side away from the substrate base plate is flush with a surface of the negative photoresist layer on a side away from the substrate base plate.

Optionally, the display panel further comprises a metal reflective layer;

the metal reflecting layer is positioned on one side of the transistor array layer, which is far away from the substrate base plate, and surrounds the negative photoresist layer and the micro light-emitting diode.

Optionally, an interface between the metal reflective layer and the negative photoresist layer is a reflective surface, the reflective surface is inclined toward one side of the metal reflective layer, and an included angle between the reflective surface and the transistor array layer at one side of the metal reflective layer is 40 ° to 60 °.

Optionally, the surface of the micro light emitting diode on the side far away from the substrate base plate, the surface of the negative photoresist layer on the side far away from the substrate base plate, and the surface of the metal reflection layer on the side far away from the substrate base plate are flush.

Optionally, the display panel further comprises a black matrix;

the black matrix is positioned on one side of the metal reflecting layer, which is far away from the substrate base plate, and covers the metal reflecting layer.

Optionally, the black matrix exposes the micro light emitting diode and the negative photoresist layer.

Optionally, the transistor array layer comprises a pixel driving circuit;

the micro light emitting diode is overlapped with the pixel driving circuit.

Optionally, the conductive pad protrudes above the transistor array layer.

In a second aspect, the present invention provides a display device comprising the display panel.

In a third aspect, the present invention provides a method for manufacturing a display panel, including:

providing a substrate base plate;

forming a transistor array layer on the substrate base plate;

forming a micro light-emitting diode on one side of the transistor array layer far away from the substrate base plate;

forming a negative photoresist layer on one side of the transistor array layer far away from the substrate;

the transistor array layer comprises a conductive pad at one side far away from the substrate base plate;

the micro light-emitting diode is electrically connected with the conductive bonding pad;

the negative photoresist layer surrounds the micro light emitting diode.

Optionally, the method for manufacturing the display panel further includes:

forming a metal reflecting layer on one side of the transistor array layer far away from the substrate base plate;

wherein the metal reflective layer surrounds the negative photoresist layer and the micro light emitting diode.

Optionally, the method for manufacturing the display panel further includes:

forming a black matrix on one side of the metal reflecting layer far away from the substrate;

wherein the black matrix covers the metal reflective layer.

In the invention, the transistor array layer is electrically connected with the micro light-emitting diode through the conductive bonding pad. The driving current of the transistor array layer is transmitted to the micro light emitting diode through the conductive pad. The transistor array layer drives the micro light-emitting diode to emit light towards the side far away from the substrate base plate. The negative photoresist layer surrounds the micro light emitting diode at a side of the transistor array layer away from the substrate base plate. The negative photoresist layer contacts the light emitting diode to fix the micro light emitting diode. The contact surface between the negative photoresist layer and the micro light-emitting diode is larger than the contact surface between the conductive bonding pad on the transistor array layer and the micro light-emitting diode. Although the transistor array layer fixes the micro light emitting diode through the conductive pad, the force of fixing the micro light emitting diode through the conductive pad by the transistor array layer is small. The negative photoresist layer has a large acting force for fixing the micro light-emitting diode, so that the micro light-emitting diode is prevented from being easily separated from the conductive bonding pad on the transistor array layer. The micro light-emitting diode is formed on one side of the transistor array layer far away from the substrate base plate through transfer. The micro light emitting diode is transported before the negative photoresist layer is formed on the side of the transistor array layer far away from the substrate. At this time, the side of the transistor array layer away from the substrate base plate only has a conductive bonding pad without other film layers such as a negative photoresist layer and the like. The transportation of the micro light-emitting diode cannot collide with other films outside the conductive bonding pad on one side, far away from the substrate, of the transistor array layer, and the transportation of the micro light-emitting diode cannot cause damage.

[ description of the drawings ]

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a prior art display panel 100;

FIG. 2 is a schematic structural diagram of a display panel 200 according to an embodiment of the invention;

FIG. 3 is a schematic diagram of the display panel 200 of FIG. 2 at AA' according to the embodiment of the present invention;

FIG. 4 is a schematic diagram of another structure of a display panel 200 according to an embodiment of the invention;

FIG. 5 is a schematic diagram of the display panel 200 of FIG. 4 at BB' according to the embodiment of the present invention;

FIG. 6 is a schematic diagram of another structure of a display panel 200 according to an embodiment of the invention;

FIG. 7 is a schematic diagram of the display panel 200 of FIG. 6 at CC' according to the embodiment of the present invention;

FIG. 8 is a schematic diagram of another structure of a display panel 200 according to an embodiment of the invention;

FIG. 9 is a schematic diagram of a display device 300 according to an embodiment of the present invention;

FIG. 10 is a schematic process diagram of a method 400 for manufacturing a display panel according to an embodiment of the invention;

fig. 11 is another process diagram of a method 400 for manufacturing a display panel according to an embodiment of the invention.

[ detailed description ] embodiments

For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.

It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.

It should be understood that although the terms first, second, etc. may be used herein to describe devices in accordance with embodiments of the present invention, these devices should not be limited by these terms. These terms are only used to distinguish one device from another. For example, a first device may also be referred to as a second device, and similarly, a second device may also be referred to as a first device, without departing from the scope of embodiments of the present invention.

Fig. 1 is a schematic structural diagram of a display panel 100 in the prior art.

As shown in fig. 1, in the prior art, a display panel 100 includes a plurality of micro light emitting diodes 110. Wherein, the micro light emitting diode 110 is formed on the display panel 100 by the transfer. But instead. The transportation of the micro light emitting diodes 110 is liable to damage other films on the display panel 100, so that the yield of the display panel 100 is reduced.

In order to solve the above technical problems, the present invention provides a display panel, a display device, and a method of manufacturing the display panel.

FIG. 2 is a schematic structural diagram of a display panel 200 according to an embodiment of the invention; fig. 3 is a schematic structural diagram of the display panel 200 at AA' in fig. 2 according to the embodiment of the invention.

As shown in fig. 2 and 3, the display panel 200 includes a substrate 210, a transistor array layer 220, a micro light emitting diode 230, and a negative photoresist layer 240; the transistor array layer 220 is located on the substrate base plate 210; the transistor array layer 220 includes a conductive pad 221 on a side away from the substrate base 210; the micro light emitting diode 230 and the negative photoresist layer 240 are both located on the side of the transistor array layer 220 away from the substrate 210; the conductive pad 221 is electrically connected to the micro light emitting diode 230; the negative photoresist layer 240 surrounds the micro light emitting diodes 230.

In the embodiment of the present invention, the transistor array layer 220 is electrically connected to the micro light emitting diodes 230 through the conductive pads 221. The driving current of the transistor array layer 220 is transmitted to the micro light emitting diode 230 through the conductive pad 221. The transistor array layer 220 drives the micro light emitting diodes 230 to emit light toward the side away from the substrate base plate 210. At the side of the transistor array layer 220 away from the substrate base plate 210, the negative photoresist layer 240 surrounds the micro light emitting diodes 230. The negative photoresist layer 240 contacts the light emitting diode 230, thereby fixing the micro light emitting diode 230. The contact surface between the negative photoresist layer 240 and the micro light emitting diodes 230 is larger than the contact surface between the conductive pads 221 on the transistor array layer 220 and the micro light emitting diodes 230. Although the transistor array layer 220 fixes the micro light emitting diodes 230 through the conductive pads 221, the force of the transistor array layer 220 fixing the micro light emitting diodes 230 through the conductive pads 221 is small. The negative photoresist layer 240 has a strong force to fix the micro light emitting diodes 230 so as to prevent the micro light emitting diodes 230 from easily separating from the conductive pads 221 on the transistor array layer 220. The micro light emitting diode 230 is formed on the side of the transistor array layer 220 away from the substrate 210 by transportation. The micro light emitting diode 230 is transported before the negative photoresist layer 240 is formed on the side of the transistor array layer 220 away from the substrate 210. At this time, the side of the transistor array layer 220 away from the substrate 210 has only the conductive pad 221 and no other film layer such as the negative photoresist layer 240. The micro light emitting diode 230 is transported without colliding with other films except the conductive pad 221 on the side of the transistor array layer 220 away from the substrate base plate 210, and the transportation of the micro light emitting diode 230 is not damaged.

As shown in fig. 2 and 3, the negative photoresist layer 240 surrounds the conductive pad 221.

In the embodiment of the present invention, the transistor array layer 220 is electrically connected to the micro light emitting diode 230 through the conductive pad 221, and the negative photoresist layer 240 surrounds the conductive pad 221. The negative photoresist layer 240 separates the conductive pad 221 on the transistor array layer 220 from other conductive layers except the micro light emitting diode 230, so as to prevent the conductive pad 221 on the transistor array layer 220 from being shorted with other conductive layers except the micro light emitting diode 230. The negative photoresist layer 240 separates the plurality of conductive pads 221 on the transistor array layer 220 to prevent the plurality of conductive pads 221 on the transistor array layer 220 from being shorted with each other. Then, the transistor array layer 220 drives the micro light emitting diodes 230 to emit light toward the side away from the substrate base plate 210 through the conductive pads 221, respectively.

As shown in fig. 2 and 3, the surface of the micro light emitting diode 230 on the side away from the substrate 210 is flush with the surface of the negative photoresist layer 240 on the side away from the substrate 210.

In the embodiment of the present invention, the negative photoresist layer 240 surrounds the micro light emitting diodes 230, and the surface of the micro light emitting diodes 230 on the side away from the substrate 210 is flush with the surface of the negative photoresist layer 240 on the side away from the substrate 210. The negative photoresist layer 240 exposes only the top surface of the side of the micro light emitting diode 230 away from the substrate 210, so that the micro light emitting diode 230 emits light through the top surface of the side away from the substrate 210. The negative photoresist layer 240 is in full contact with the surface of the micro light emitting diode 230 other than the top surface of the substrate 210. The contact area between the negative photoresist layer 240 and the micro light emitting diode 230 is enlarged, and the force of the negative photoresist layer 240 fixing the micro light emitting diode 230 is increased to prevent the micro light emitting diode 230 from separating from the conductive pad 221 on the transistor array layer 220. The negative photoresist layer 240 does not protrude from the side of the micro light emitting diode 230 away from the substrate 210, and the thickness of the negative photoresist layer 240 in the vertical direction of the substrate 210 is smaller, so as to save the negative photoresist material of the negative photoresist layer 240.

FIG. 4 is a schematic diagram of another structure of a display panel 200 according to an embodiment of the invention; fig. 5 is a schematic structural diagram of the display panel 200 at BB' in fig. 4 according to the embodiment of the invention.

As shown in fig. 4 and 5, the display panel 200 further includes a metal reflective layer 250; the metal reflective layer 250 is disposed on the side of the transistor array layer 220 away from the substrate 210, and the metal reflective layer 250 surrounds the negative photoresist layer 240 and the micro light emitting diode 230.

In the embodiment of the present invention, at the side of the transistor array layer 220 away from the substrate 210, the metal reflective layer 250 surrounds the negative photoresist layer 240 and the micro light emitting diodes 230. The micro light emitting diode 230 emits light not only toward the side away from the substrate base plate 210 but also toward the negative photoresist layer 240. The light emitted from the micro light emitting diode 230 passes through the negative photoresist layer 240 and is reflected at the metal reflective layer 250 toward the side away from the substrate base plate 210. The light emitted from the micro light emitting diode 230 toward the side away from the substrate 210 is increased, and the light emitting rate of the micro light emitting diode 230 toward the side away from the substrate 210 is increased. The negative photoresist layer 240 is located between the micro light emitting diode 230 and the metal reflective layer 250, and the negative photoresist layer 240 separates the micro light emitting diode 230 from the metal reflective layer 250 to prevent the micro light emitting diode 230 from being short-circuited with the metal reflective layer 250. Meanwhile, the negative photoresist layer 240 is located between the conductive pad 221 on the transistor array layer 220 and the metal reflective layer 250, and the negative photoresist layer 240 separates the conductive pad 221 on the transistor array layer 220 from the metal reflective layer 250 so as to prevent the conductive pad 221 on the transistor array layer 220 from being shorted with the metal reflective layer 250.

As shown in fig. 4 and 5, the interface between the metal reflective layer 250 and the negative photoresist layer 240 is a reflective surface 251, the reflective surface 251 is inclined toward the metal reflective layer 250, and the included angle between the reflective surface 251 and the transistor array layer 220 at the metal reflective layer 250 side is 40 ° to 60 °.

In the embodiment of the present invention, the light-reflecting surface 251 between the metal reflective layer 250 and the negative photoresist layer 240 is inclined toward the metal reflective layer 250, and the included angle between the light-reflecting surface 251 and the transistor array layer 220 at the metal reflective layer 250 side is 40 ° to 60 °. On one hand, the included angle between the light reflecting surface 251 and the transistor array layer 220 at the side of the metal reflecting layer 250 is less than or equal to 60 °, the inclination of the light reflecting surface 251 with respect to the vertical direction of the transistor array layer 220 is larger, and the micro light emitting diode 230 emits light toward the negative photoresist layer 240 and the metal reflecting layer 250, and the light transmits through the negative photoresist layer 240 and the majority of the light is reflected at the metal reflecting layer 250 toward the side away from the substrate 210. The light emitted from the micro light emitting diode 230 toward the side away from the substrate 210 is greatly increased, and the light emitting rate of the micro light emitting diode 230 toward the side away from the substrate 210 is greatly increased. On the other hand, the included angle between the light reflecting surface 251 and the transistor array layer 220 at the side of the metal reflective layer 250 is greater than or equal to 40 °, the inclination of the light reflecting surface 251 with respect to the vertical direction of the transistor array layer 220 is not excessively large, and the distance between two adjacent micro light emitting diodes 230 is not excessively large, so as to ensure high resolution of the display panel 200.

As shown in fig. 4 and 5, the surface of the micro light emitting diode 230 on the side away from the substrate 210, the surface of the negative photoresist layer 240 on the side away from the substrate 210, and the surface of the metal reflective layer 250 on the side away from the substrate 210 are flush.

In the embodiment of the invention, the surface of the micro light emitting diode 230 on the side away from the substrate 210, the surface of the negative photoresist layer 240 on the side away from the substrate 210, and the surface of the metal reflective layer 250 on the side away from the substrate 210 are flush. The surface of the metal reflective layer 250 away from the substrate 210 is not lower than the surface of the negative photoresist layer 240 or the surface of the micro light emitting diode 230 away from the substrate 210, the reflective surface 251 between the metal reflective layer 250 and the negative photoresist layer 240 is larger, and the micro light emitting diode 230 emits light toward the negative photoresist layer 240 and the metal reflective layer 250, and the light transmits through the negative photoresist layer 240 and most of the light is reflected toward the side away from the substrate 210 at the metal reflective layer 250. The light emitted from the micro light emitting diode 230 toward the side away from the substrate 210 is greatly increased, and the light emitting rate of the micro light emitting diode 230 toward the side away from the substrate 210 is greatly increased. The surface of the metal reflective layer 250 on the side away from the substrate 210 is not higher than the surface of the negative photoresist layer 240 or the surface of the micro light emitting diode 230 on the side away from the substrate 210, and the thickness of the metal reflective layer 250 in the vertical direction of the substrate 210 is smaller, so as to save the metal material of the metal reflective layer 250.

FIG. 6 is a schematic diagram of another structure of a display panel 200 according to an embodiment of the invention; fig. 7 is a schematic structural diagram of the display panel 200 of fig. 6 at CC' according to the embodiment of the invention.

As shown in fig. 6 and 7, the display panel 200 further includes a black matrix 260; the black matrix 260 is located on the side of the metal reflective layer 250 away from the substrate base plate 210, and the black matrix 260 covers the metal reflective layer 250.

In the embodiment of the invention, the black matrix 260 is located on the side of the metal reflective layer 250 away from the substrate base plate 210, and the black matrix 260 covers the metal reflective layer 250. The metal reflective layer 250 not only reflects light emitted from the micro light emitting diode 230 toward the side away from the substrate base plate 210, but also reflects external light toward the side away from the substrate base plate 210. The black matrix 260 absorbs external light at a side of the metal reflective layer 250 away from the substrate base plate 210, and blocks the external light from reaching the metal reflective layer 250. This prevents the metal reflective layer 250 from reflecting external light toward the side away from the substrate 210 to interfere with the light emitted from the micro light emitting diode 230 toward the side away from the substrate 210.

As shown in fig. 6 and 7, the black matrix 260 exposes the micro light emitting diodes 230 and the negative photoresist layer 240.

In the embodiment of the invention, the black matrix 260 exposes the micro light emitting diode 230 and the negative photoresist layer 240, so that the light emitted from the light emitting diode 230 exits at the top surface of the micro light emitting diode 230 or the top surface of the negative photoresist layer 240 toward the side away from the substrate 210. The micro light emitting diodes 230 emit light toward the side away from the substrate 210, and the light exits at the top surface of the micro light emitting diodes 230 toward the side away from the substrate 210. The micro light emitting diode 230 emits light toward the negative photoresist layer 240, and the light firstly passes through the negative photoresist layer 240 for the first time and is reflected toward the side far from the substrate 210 at the interface between the negative photoresist layer 240 and the metal reflective layer 250, and then passes through the negative photoresist layer 240 for the second time and exits toward the side far from the substrate 210 at the top surface of the negative photoresist layer 240.

Fig. 8 is another schematic structural diagram of the display panel 200 according to the embodiment of the invention.

As shown in fig. 8, the transistor array layer 220 includes a pixel driving circuit; the micro light emitting diodes 230 overlap the pixel driving circuit.

In an embodiment of the present invention, the micro light emitting diode 230 overlaps with the pixel driving circuit in the transistor array layer 220. The pixel driving circuit in the transistor array layer 220 drives the micro light emitting diode 230 to emit light. The micro light emitting diode 230 emits light not only toward the side away from the substrate base plate 210 but also toward the transistor array layer 220. Light emitted from the micro light emitting diode 230 is reflected at the pixel driving circuit in the transistor array layer 220 toward the side away from the substrate 210. The light emitted from the micro light emitting diode 230 toward the side away from the substrate 210 is increased, and the light emitting rate of the micro light emitting diode 230 toward the side away from the substrate 210 is increased.

As shown in fig. 2 to 8, the conductive pad 221 protrudes on the transistor array layer 220.

In the embodiment of the invention, the conductive pad 221 protrudes from the transistor array layer 220, and the micro light emitting diode 230 is transferred to the side of the transistor array layer 220 away from the substrate 210, so that the conductive pad 221 is electrically connected with the micro light emitting diode 230. The micro light emitting diode 230 is transported before the negative photoresist layer 240 and the metal reflective layer 250 are formed on the side of the transistor array layer 220 away from the substrate 210. At this time, the side of the transistor array layer 220 away from the substrate 210 has only the conductive pad 221 without other film layers such as the negative photoresist layer 240 and the metal reflective layer 250. The micro light emitting diode 230 is transported without colliding with other films except the conductive pad 221 on the side of the transistor array layer 220 away from the substrate base plate 210, and the transportation of the micro light emitting diode 230 is not damaged.

Fig. 9 is a schematic structural diagram of a display device 300 according to an embodiment of the invention.

As shown in fig. 9, the display device 300 includes a display panel 200.

In the embodiment of the present invention, the display device 300 implements display by using the display panel 200, such as a smart phone or the like. The display panel 200 is described above and will not be described in detail.

Fig. 10 is a process diagram of a method 400 for manufacturing a display panel according to an embodiment of the invention.

As shown in fig. 10, the method 400 for manufacturing a display panel includes:

step S410, providing a substrate base plate 210;

step S420, forming a transistor array layer 220 on the substrate base 210;

step S430, forming a micro light emitting diode 230 on a side of the transistor array layer 220 away from the substrate base plate 210;

step S440, forming a negative photoresist layer 240 on a side of the transistor array layer 220 away from the substrate base plate 210;

the transistor array layer 220 includes a conductive pad 221 on a side away from the substrate base plate 210; the micro light emitting diode 230 is electrically connected to the conductive pad 221; the negative photoresist layer 240 surrounds the micro light emitting diodes 230.

In the embodiment of the present invention, the transistor array layer 220 is electrically connected to the micro light emitting diodes 230 through the conductive pads 221. The driving current of the transistor array layer 220 is transmitted to the micro light emitting diode 230 through the conductive pad 221. The transistor array layer 220 drives the micro light emitting diodes 230 to emit light. On the side of the transistor array layer 220 away from the substrate base plate 210, the negative photoresist layer 240 surrounds the micro light emitting diodes 230. The negative photoresist layer 240 contacts the light emitting diode 230, thereby fixing the micro light emitting diode 230. The contact surface between the negative photoresist layer 240 and the micro light emitting diode 230 is larger than the contact surface between the conductive pad 221 on the transistor array layer 220 and the micro light emitting diode 230. Although the transistor array layer 220 fixes the micro light emitting diodes 230 through the conductive pads 221, the force of the transistor array layer 220 fixing the micro light emitting diodes 230 through the conductive pads 221 is small. The negative photoresist layer 240 has a strong force to fix the micro light emitting diodes 230 so as to prevent the micro light emitting diodes 230 from easily separating from the conductive pads 221 on the transistor array layer 220. The micro light emitting diode 230 is formed on the side of the transistor array layer 220 away from the substrate 210 by transportation. The micro light emitting diode 230 is transported before the negative photoresist layer 240 is formed on the side of the transistor array layer 220 away from the substrate 210. At this time, the side of the transistor array layer 220 away from the substrate 210 has only the conductive pad 221 and no other film layer such as the negative photoresist layer 240. The micro light emitting diode 230 is transported without colliding with other films except the conductive pad 221 on the side of the transistor array layer 220 away from the substrate base plate 210, and the transportation of the micro light emitting diode 230 is not damaged.

Fig. 11 is another process diagram of a method 400 for manufacturing a display panel according to an embodiment of the invention.

As shown in fig. 11, the method 400 for manufacturing a display panel further includes:

step S450, forming a metal reflective layer 250 on a side of the transistor array layer 220 away from the substrate 210;

wherein the metal reflective layer 250 surrounds the negative photoresist layer 240 and the micro light emitting diodes 230.

In the embodiment of the present invention, the step of forming the metal reflective layer 250 on the side of the transistor array layer 220 away from the substrate 210 is performed after the step of forming the negative photoresist layer 240 on the side of the transistor array layer 220 away from the substrate 210. At the side of the transistor array layer 220 away from the substrate base plate 210, the metal reflective layer 250 surrounds the negative photoresist layer 240 and the micro light emitting diodes 230. The micro light emitting diode 230 emits light not only toward the side away from the substrate base plate 210 but also toward the negative photoresist layer 240. The light emitted from the micro light emitting diode 230 passes through the negative photoresist layer 240 and is reflected at the metal reflective layer 250 toward the side away from the substrate base plate 210. The light emitted from the micro light emitting diode 230 toward the side away from the substrate 210 increases, and the light extraction rate of the micro light emitting diode 230 toward the side away from the substrate 210 increases. The negative photoresist layer 240 is located between the micro light emitting diode 230 and the metal reflective layer 250, and the negative photoresist layer 240 separates the micro light emitting diode 230 from the metal reflective layer 250 to prevent the micro light emitting diode 230 from being short-circuited with the metal reflective layer 250. Meanwhile, the negative photoresist layer 240 is located between the conductive pad 221 on the transistor array layer 220 and the metal reflective layer 250, and the negative photoresist layer 240 separates the conductive pad 221 on the transistor array layer 220 from the metal reflective layer 250 so as to prevent the conductive pad 221 on the transistor array layer 220 from being shorted with the metal reflective layer 250.

As shown in fig. 11, the method 400 for manufacturing a display panel further includes:

step S460, forming a black matrix 260 on a side of the metal reflective layer 250 away from the substrate 210;

wherein the black matrix 260 covers the metal reflective layer 250.

In the embodiment of the invention, the step of forming the black matrix 260 on the side of the metal reflective layer 250 away from the substrate 210 is performed after the step of forming the metal reflective layer 250 on the side of the transistor array layer 220 away from the substrate 210. The black matrix 260 is located on the side of the metal reflective layer 250 away from the substrate base plate 210, and the black matrix 260 covers the metal reflective layer 250. The metal reflective layer 250 not only reflects light emitted from the micro light emitting diode 230 toward the side away from the substrate base plate 210, but also reflects external light toward the side away from the substrate base plate 210. The black matrix 260 absorbs external light at a side of the metal reflective layer 250 away from the substrate base plate 210, and blocks the external light from reaching the metal reflective layer 250. This prevents the metal reflective layer 250 from reflecting external light toward the side away from the substrate 210 to interfere with the light emitted from the micro light emitting diode 230 toward the side away from the substrate 210.

In summary, the present invention provides a display panel, a display device and a method for manufacturing the display panel. The display panel comprises a substrate, a transistor array layer, a micro light-emitting diode and a negative photoresist layer; the transistor array layer is positioned on the substrate base plate; the transistor array layer comprises a conductive bonding pad at one side far away from the substrate base plate; the micro light-emitting diode and the negative photoresist layer are positioned on one side of the transistor array layer away from the substrate; the conductive bonding pad is electrically connected with the micro light-emitting diode; the negative photoresist layer surrounds the micro light emitting diode. The transistor array layer drives the micro light-emitting diode to emit light. The negative photoresist layer contacts the light-emitting diode to fix the micro light-emitting diode; the negative photoresist layer has a large acting force for fixing the micro light-emitting diode, so that the micro light-emitting diode is prevented from being easily separated from the conductive bonding pad on the transistor array layer. The transportation of the micro light-emitting diode cannot collide with other films outside the conductive bonding pad on one side, far away from the substrate, of the transistor array layer, and the transportation of the micro light-emitting diode cannot cause damage.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (9)

1. A display panel, characterized in that, comprising a substrate substrate, a transistor array layer, a miniature light-emitting diode, and a negative photoresist layer; the transistor array layer is located on the base substrate; The transistor array layer includes a conductive pad on a side away from the base substrate; The micro light-emitting diode and the negative photoresist layer are both located on the side of the transistor array layer away from the base substrate; the conductive pad is electrically connected to the miniature light-emitting diode; the negative photoresist layer surrounds the micro light emitting diode; a metal reflection layer; the metal reflection layer is located on the side of the transistor array layer away from the base substrate, and the metal reflection layer surrounds the negative photoresist layer and the miniature light-emitting diode; black matrix; the black matrix is located on the side of the metal reflection layer away from the base substrate, and the black matrix covers the metal reflection layer; The interface between the metal reflective layer and the negative photoresist layer is a reflective surface, the reflective surface is inclined toward the side of the metal reflective layer, and the reflective surface and the transistor are located on the side of the metal reflective layer. The angle between the array layers is 40° to 60°. 2 . The display panel of claim 1 , wherein the negative photoresist layer surrounds the conductive pad. 3 . 3 . The display panel according to claim 1 , wherein the surface of the micro light-emitting diode on the side away from the base substrate is flush with the surface of the negative photoresist layer at the side away from the base substrate 3 . . 4 . The display panel according to claim 1 , wherein the surface of the micro light-emitting diode on the side away from the base substrate, the surface of the negative photoresist layer on the side away from the base substrate and the surface of the negative photoresist layer. The surface of the metal reflective layer on the side away from the base substrate is flush. 5 . The display panel of claim 1 , wherein the black matrix exposes the micro light emitting diodes and the negative photoresist layer. 6 . 6. The display panel according to claim 1, wherein the transistor array layer comprises a pixel driving circuit; The micro light-emitting diode overlaps the pixel driving circuit. 7 . The display panel of claim 1 , wherein the conductive pads protrude on the transistor array layer. 8 . 8. A display device, comprising the display panel according to any one of claims 1 to 7. 9. A method for manufacturing a display panel, comprising: Provide a base substrate; forming a transistor array layer on the base substrate; forming a miniature light emitting diode on the side of the transistor array layer away from the base substrate; forming a negative photoresist layer on the side of the transistor array layer away from the base substrate; Wherein, the transistor array layer includes a conductive pad on a side away from the base substrate; the miniature light-emitting diode is electrically connected to the conductive pad; the negative photoresist layer surrounds the micro light emitting diode; forming a metal reflection layer on the side of the transistor array layer away from the base substrate; Wherein, the metal reflective layer surrounds the negative photoresist layer and the miniature light-emitting diode; forming a black matrix on the side of the metal reflective layer away from the base substrate; Wherein, the black matrix covers the metal reflection layer; The interface between the metal reflective layer and the negative photoresist layer is a reflective surface, the reflective surface is inclined toward the side of the metal reflective layer, and the reflective surface and the transistor are located on the side of the metal reflective layer. The angle between the array layers is 40° to 60°.

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