CN110246952A - A kind of LED wafer color-changing device - Google Patents
A kind of LED wafer color-changing device Download PDFInfo
- Publication number
- CN110246952A CN110246952A CN201910383338.2A CN201910383338A CN110246952A CN 110246952 A CN110246952 A CN 110246952A CN 201910383338 A CN201910383338 A CN 201910383338A CN 110246952 A CN110246952 A CN 110246952A
- Authority
- CN
- China
- Prior art keywords
- resistant layer
- led chip
- chip
- layer
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
Landscapes
- Led Device Packages (AREA)
Abstract
本发明公开一种LED晶片变色装置,包括透明耐温层以及烧结形成在透明耐温层外表面上的荧光粉层,所述透明耐温层的内表面一侧对应蓝光晶片并与蓝光晶片之间形成间隙。与现有技术相比,本发明在需要在较大功率LED晶片上应用时,高的光通量所产生的热量并不会对所形成的LED产品造成任何影响,如此确保所制成的LED产品可以持续性的工作。
The invention discloses an LED chip discoloration device, which comprises a transparent temperature-resistant layer and a phosphor layer formed by sintering on the outer surface of the transparent temperature-resistant layer. gaps between. Compared with the prior art, when the present invention needs to be applied on a higher-power LED chip, the heat generated by the high luminous flux will not have any impact on the formed LED product, thus ensuring that the produced LED product can continuous work.
Description
技术领域technical field
本发明涉及LED领域,具体涉及的是一种LED晶片变色装置。The invention relates to the field of LEDs, in particular to an LED chip discoloration device.
背景技术Background technique
基于成本以及耐衰减等方面的原因,蓝光晶片是市场上LED领域应用最广的晶片,为了实现对外发出白光、绿光、红光或者其它各种各样的光,一般来说都是在蓝光晶片的前方形成一个封装层,所述封装层是由硅胶和荧光粉混合而成,所述荧光粉根据当前产品所需颜色而进行匹配性设计,如此由蓝光晶片发出的蓝光经过封装层之后,即可形成实际所需颜色的光,从而满足各种颜色的常规发光需求。Based on reasons such as cost and attenuation resistance, blue light chips are the most widely used chips in the LED field on the market. An encapsulation layer is formed in front of the chip. The encapsulation layer is a mixture of silica gel and fluorescent powder. The phosphor powder is designed for matching according to the color required by the current product. In this way, after the blue light emitted by the blue chip passes through the encapsulation layer, The light of the actual required color can be formed, so as to meet the conventional lighting requirements of various colors.
但是,由于硅胶和荧光粉混合形成的封装层需要让蓝光晶片所产生的光通过,再结合硅胶自身具有较差的耐热性,对于较大功率的蓝光晶片,其形成较大光通量会直接造成封装层发热并毁坏,使得常规硅胶和荧光粉的封装方式无法应用在较大功率的LED晶片上,如此给实际产品设计带来了困扰,有鉴于此,本申请人针对上述问题深入研究,遂有本案产生。However, because the encapsulation layer formed by the mixture of silica gel and phosphor powder needs to allow the light generated by the blue light chip to pass through, combined with the poor heat resistance of the silica gel itself, for a blue light chip with a higher power, the larger luminous flux formed will directly cause The encapsulation layer is heated and destroyed, so that the encapsulation method of conventional silica gel and phosphor powder cannot be applied to higher power LED chips, which brings troubles to the actual product design. This case arises.
发明内容Contents of the invention
本发明的主要目的在于提供一种LED晶片变色装置,以解决现有技术中采用蓝光晶片作为发光晶片,再进行变色处理的过程中会容易因为光通量较大而发生硅胶封装层损坏的问题。The main purpose of the present invention is to provide an LED chip discoloration device to solve the problem in the prior art that the blue light chip is used as the light-emitting chip, and the silicone encapsulation layer is easily damaged due to the large luminous flux during the discoloration process.
为了达成上述目的,本发明的解决方案是:In order to achieve the above object, the solution of the present invention is:
一种LED晶片变色装置,其中,包括透明耐温层以及烧结形成在透明耐温层外表面上的荧光粉层,所述透明耐温层的内表面一侧对应蓝光晶片并与蓝光晶片之间形成间隙。An LED chip discoloration device, which includes a transparent temperature-resistant layer and a phosphor layer formed on the outer surface of the transparent temperature-resistant layer by sintering, and one side of the inner surface of the transparent temperature-resistant layer corresponds to a blue chip and is in between A gap is formed.
进一步,所述荧光粉层中的荧光粉为红色荧光粉或绿色荧光粉。Further, the phosphor in the phosphor layer is red phosphor or green phosphor.
进一步,所述变色装置还包括位于LED晶片侧沿的支撑座,所述透明耐温层安装在支撑座上并让透明耐温层下表面和蓝光晶片之间形成有间隙。Further, the discoloration device also includes a support seat located on the side edge of the LED chip, the transparent temperature-resistant layer is installed on the support seat and a gap is formed between the lower surface of the transparent temperature-resistant layer and the blue light chip.
进一步,所述透明耐温层为蓝宝石玻璃。Further, the transparent heat-resistant layer is sapphire glass.
采用上述结构后,本发明涉及一种LED晶片变色装置,由于其是采用透明耐温层作为基底材料,其具有透光性好以及耐温性能佳的特点,由此当需要在较大功率LED晶片上应用时,高的光通量所产生的热量并不会对产品造成任何影响,如此确保所制成的LED产品可以持续性的工作。After adopting the above structure, the present invention relates to an LED chip discoloration device. Since it uses a transparent temperature-resistant layer as the base material, it has the characteristics of good light transmission and good temperature resistance. When applied on the wafer, the heat generated by the high luminous flux will not have any impact on the product, so as to ensure that the manufactured LED products can continue to work.
附图说明Description of drawings
图1为本发明涉及一种LED晶片变色装置的结构示意图。FIG. 1 is a schematic structural view of an LED chip discoloration device according to the present invention.
图2为本发明涉及的变色装置和LED晶片之间配合的示意图。Fig. 2 is a schematic diagram of cooperation between the color changing device and the LED chip involved in the present invention.
图中:In the picture:
透明耐温层-1;荧光粉层-2;蓝光晶片-3;Transparent temperature-resistant layer-1; Phosphor powder layer-2; Blu-ray chip-3;
支撑座-4;基板-6。Support seat-4; substrate-6.
具体实施方式Detailed ways
为了进一步解释本发明的技术方案,下面通过具体实施例来对本发明进行详细阐述。In order to further explain the technical solution of the present invention, the present invention will be described in detail below through specific examples.
如图1所示,本发明涉及的一种LED晶片变色装置,包括透明耐温层1以及烧结形成在透明耐温层1外表面上的荧光粉层2,所述透明耐温层1的内表面一侧对应蓝光晶片3并与蓝光晶片3之间形成间隙H。需要说明的是,所述透明耐温层1的外表面是指背向蓝光晶片3的一侧,所述内表面是指朝向蓝光晶片3的一侧。As shown in Figure 1, an LED chip discoloration device related to the present invention includes a transparent temperature-resistant layer 1 and a phosphor layer 2 formed on the outer surface of the transparent temperature-resistant layer 1 by sintering, and the inner surface of the transparent temperature-resistant layer 1 is One side of the surface corresponds to the blue light chip 3 and forms a gap H with the blue light chip 3 . It should be noted that the outer surface of the transparent heat-resistant layer 1 refers to the side facing away from the blue light chip 3 , and the inner surface refers to the side facing the blue light chip 3 .
在本实施例中,所述荧光粉层2中的荧光粉为红色荧光粉或绿色荧光粉;当然也可以为其它颜色的荧光粉,在此不做限定,具体根据实际需要来选择。In this embodiment, the fluorescent powder in the fluorescent powder layer 2 is red fluorescent powder or green fluorescent powder; of course, it can also be fluorescent powder of other colors, which are not limited here and are selected according to actual needs.
如图2所示,作为一种具体实施例,所述变色装置还包括位于LED晶片侧沿的支撑座4,所述透明耐温层1安装在支撑座4上并让透明耐温层1下表面和蓝光晶片3之间形成有间隙H。所述支撑座4可以仅起到支撑的作用,也可以同时起到散热的作用,比如采用铜基板来实现;图中所述LED晶片即为蓝光晶片,其下方设置有基板6。As shown in Figure 2, as a specific embodiment, the discoloration device also includes a support base 4 located on the side edge of the LED chip, and the transparent heat-resistant layer 1 is installed on the support base 4 and allows the transparent heat-resistant layer 1 to be lowered. A gap H is formed between the surface and the blue light chip 3 . The support base 4 can only play a role of support, or it can also play a role of heat dissipation at the same time, for example, by using a copper substrate; the LED chip in the figure is a blue light chip, and a substrate 6 is arranged below it.
作为本发明的一种具体选择,所述透明耐温层1为蓝宝石玻璃,其同时具有透明以及耐温两个特性。As a specific option of the present invention, the transparent heat-resistant layer 1 is sapphire glass, which has two characteristics of transparency and temperature resistance.
由于本发明上述结构并未解决密封的问题,如此请参照图2所示,其是采用外部再增设玻璃透镜的方式来解决,直接在变色装置这块暂时不解决。Since the above-mentioned structure of the present invention does not solve the problem of sealing, please refer to FIG. 2, it is solved by adding a glass lens outside, and the color changing device is not solved for the time being.
综上,本发明涉及一种LED晶片变色装置,由于其是采用透明耐温层1作为基底材料,其具有透光性好以及耐温性能佳的特点,由此当需要在较大功率LED晶片上应用时,高的光通量所产生的热量并不会对产品造成任何影响,如此确保所制成的LED产品可以持续性的工作。To sum up, the present invention relates to an LED chip discoloration device. Since it uses the transparent heat-resistant layer 1 as the base material, it has the characteristics of good light transmission and good temperature resistance. When it is applied on the screen, the heat generated by the high luminous flux will not have any impact on the product, so as to ensure that the manufactured LED products can continue to work.
上述实施例和图式并非限定本发明的产品形态和式样,任何所属技术领域的普通技术人员对其所做的适当变化或修饰,皆应视为不脱离本发明的专利范畴。The above-mentioned embodiments and drawings do not limit the form and style of the product of the present invention, and any appropriate changes or modifications made by those skilled in the art should be considered as not departing from the patent scope of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910383338.2A CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910383338.2A CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110246952A true CN110246952A (en) | 2019-09-17 |
Family
ID=67883853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910383338.2A Pending CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110246952A (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101169235A (en) * | 2007-09-05 | 2008-04-30 | 昌鑫光电(东莞)有限公司 | White light LED with improved structure |
CN101629707A (en) * | 2009-08-05 | 2010-01-20 | 深圳雷曼光电科技有限公司 | LED lamp and encapsulating method thereof |
KR20130070043A (en) * | 2011-12-19 | 2013-06-27 | 엘지디스플레이 주식회사 | Light emitting diode and liquid crystal display device using the same |
CN203746900U (en) * | 2014-01-29 | 2014-07-30 | 中山市宏晟祥光电照明科技有限公司 | A white LED |
CN109545910A (en) * | 2018-10-10 | 2019-03-29 | 华中科技大学 | A kind of direct White-light LED chip manufacturing method having high thermal stability |
CN209766471U (en) * | 2019-05-08 | 2019-12-10 | 格瑞电子(厦门)有限公司 | LED wafer color changing device |
-
2019
- 2019-05-08 CN CN201910383338.2A patent/CN110246952A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101169235A (en) * | 2007-09-05 | 2008-04-30 | 昌鑫光电(东莞)有限公司 | White light LED with improved structure |
CN101629707A (en) * | 2009-08-05 | 2010-01-20 | 深圳雷曼光电科技有限公司 | LED lamp and encapsulating method thereof |
KR20130070043A (en) * | 2011-12-19 | 2013-06-27 | 엘지디스플레이 주식회사 | Light emitting diode and liquid crystal display device using the same |
CN203746900U (en) * | 2014-01-29 | 2014-07-30 | 中山市宏晟祥光电照明科技有限公司 | A white LED |
CN109545910A (en) * | 2018-10-10 | 2019-03-29 | 华中科技大学 | A kind of direct White-light LED chip manufacturing method having high thermal stability |
CN209766471U (en) * | 2019-05-08 | 2019-12-10 | 格瑞电子(厦门)有限公司 | LED wafer color changing device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018205455A1 (en) | Structure of white led cob packaged using csp chip and flip blue led chip, and manufacturing method | |
US8581284B2 (en) | Semiconductor light-emitting device and manufacturing method | |
JP6448365B2 (en) | Light emitting device and projection device | |
CN107180902A (en) | LED lamp bead and LED/light source | |
TW201017932A (en) | Light emitting device having a refractory phosphor layer | |
WO2012144030A1 (en) | Light emitting device and method for manufacturing same | |
WO2010123052A1 (en) | Light-emitting device | |
CN110165041A (en) | Light emitting device, its manufacturing method and display module | |
CN104201272A (en) | Light-emitting diode (LED) full-color chip on board (COB) mode packaging method | |
TW201735405A (en) | LED chip seal containing phosphor, LED package including the same, and manufacturing method thereof | |
CN108767100A (en) | Backlight module and preparation method thereof | |
CN101126863A (en) | Light-emitting diode light source module with heat radiation structure | |
CN105280795A (en) | Lighting Unit and Lighting Module | |
CN104037302B (en) | LED (light-emitting diode) package assembly | |
CN105870294A (en) | Packaging method and structure of high-power LED | |
CN209766471U (en) | LED wafer color changing device | |
CN110246952A (en) | A kind of LED wafer color-changing device | |
CN107221594A (en) | Ceramic substrate LED of one side light extraction and preparation method thereof | |
JP5846182B2 (en) | Method for manufacturing light emitting device | |
CN207517729U (en) | The luminous uniform planar LED light source of one kind | |
CN101783341B (en) | LED light source module with heat dissipation structure | |
CN107195754A (en) | A kind of LED encapsulation structure and method for packing for eliminating yellow hot spot | |
TWI568030B (en) | Method of manufacturing a light emitting diode package | |
JP2012119544A (en) | Led light emitting body | |
CN221447197U (en) | Full spectrum LED packaging structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190917 |