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CN110233419A - The encapsulating structure of laser diode - Google Patents

The encapsulating structure of laser diode Download PDF

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Publication number
CN110233419A
CN110233419A CN201810184324.3A CN201810184324A CN110233419A CN 110233419 A CN110233419 A CN 110233419A CN 201810184324 A CN201810184324 A CN 201810184324A CN 110233419 A CN110233419 A CN 110233419A
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Prior art keywords
electrode
carrier
electrically connected
laser diode
support plate
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陈冠铭
吴世桢
吕引栋
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Himax Technologies Ltd
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Himax Technologies Ltd
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Priority to CN201810184324.3A priority Critical patent/CN110233419A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本发明提出一种激光二极管的封装结构,包含激光芯片、第一载板以及第二载板。第一载板的第一表面具有第一电极及第二电极,激光芯片设置于第一载板的第一表面上,以及第二载板的第二表面具有第三电极及第四电极。第一电极及第二电极通过非打线工艺分别电性连接至第三电极及第四电极。

The present invention provides a packaging structure of a laser diode, comprising a laser chip, a first carrier and a second carrier. The first surface of the first carrier has a first electrode and a second electrode, the laser chip is arranged on the first surface of the first carrier, and the second surface of the second carrier has a third electrode and a fourth electrode. The first electrode and the second electrode are electrically connected to the third electrode and the fourth electrode respectively through a non-wire bonding process.

Description

激光二极管的封装结构Package Structure of Laser Diode

技术领域technical field

本发明涉及一种激光二极管的封装结构,尤其涉及一种不须打线工艺的激光二极管的封装结构。The invention relates to a packaging structure of a laser diode, in particular to a packaging structure of a laser diode which does not require a wire bonding process.

背景技术Background technique

随着光电产业的发展,激光二极管已是常见的产品,而由于激光二极管具有高功率、快传输以及频宽较窄的优点,因此被广泛地应用。With the development of the optoelectronic industry, laser diodes have become common products, and due to the advantages of high power, fast transmission and narrow bandwidth, laser diodes are widely used.

图1为现有技术的激光二极管的封装结构。如图1所示,现有的激光二极管是通过打线50(bonding wire)的方式电性连接至外部,因为打线结构较占空间,例如,打线结构的单一电极宽度便占了100微米,而使得现有的激光二极管在空间上难以缩减。另外,在高功率激光二极管封装中,其针对单一电极的打线数目动辄百条以上,而连接线的数量太多会使得检测时无法确认每一条线的电性是否皆能够相通,这样则会使良率无法保证,且使用时间一长可能会因为有更多的连接线无法持续导通,而无法继续承受大电流负载,导致激光二极管损毁的情况。FIG. 1 is a package structure of a laser diode in the prior art. As shown in Figure 1, the existing laser diode is electrically connected to the outside by bonding wire 50 (bonding wire), because the bonding wire structure takes up a lot of space, for example, the single electrode width of the bonding wire structure occupies 100 microns , making it difficult to reduce the space of existing laser diodes. In addition, in the high-power laser diode package, the number of bonding wires for a single electrode is often more than a hundred, and the number of connecting wires is too large to make it impossible to confirm whether the electrical properties of each wire can be connected during testing. The yield rate cannot be guaranteed, and the laser diode may be damaged if it is used for a long time because there are more connecting lines that cannot be continuously conducted and cannot continue to withstand high current loads.

故如何改善打线工艺对激光二极管封装的影响,仍有待解决。Therefore, how to improve the impact of the wire bonding process on the laser diode package remains to be resolved.

发明内容Contents of the invention

有鉴于上述现有技术的问题,本发明的其中的一目的在于提供一种激光二极管的封装结构,以期通过非打线的方式与封装载板连接,不具有断线疑虑,有效地提升了元件可靠度。In view of the above-mentioned problems in the prior art, one of the objects of the present invention is to provide a packaging structure of laser diodes, in order to connect to the packaging substrate in a non-wire-bonded manner, without any doubts about disconnection, and effectively improve the components. reliability.

因此,为达上述目的,本发明提供一种激光二极管的封装结构,包含激光芯片、第一载板以及第二载板。第一载板的第一表面具有第一电极及第二电极,激光芯片设置于第一载板的第一表面上,以及第二载板的第二表面具有第三电极及第四电极。第一电极及第二电极通过非打线工艺分别电性连接至第三电极及第四电极。Therefore, to achieve the above purpose, the present invention provides a packaging structure of a laser diode, including a laser chip, a first carrier and a second carrier. The first surface of the first carrier has a first electrode and a second electrode, the laser chip is arranged on the first surface of the first carrier, and the second surface of the second carrier has a third electrode and a fourth electrode. The first electrode and the second electrode are respectively electrically connected to the third electrode and the fourth electrode through a non-wire bonding process.

较佳地,第一电极及第二电极可通过银胶分别电性连接至第三电极及第四电极。Preferably, the first electrode and the second electrode are respectively electrically connected to the third electrode and the fourth electrode through silver glue.

较佳地,第一电极及第二电极可通过焊锡分别电性连接至第三电极及第四电极。Preferably, the first electrode and the second electrode are respectively electrically connected to the third electrode and the fourth electrode through solder.

较佳地,可进一步包含第三载板,第三载板的第三表面具有第五电极及第六电极,及第三载板的第四表面具有第七电极及第八电极,第五电极及第六电极分别电性连接至第七电极及第八电极,其中第一载板的第五表面具有第九电极及第十电极,第一电极及第二电极分别通过穿孔电性连接至第九电极及第十电极,第九电极及第十电极通过银胶或焊锡分别电性连接至第五电极及第六电极,以及第七电极及第八电极通过银胶或焊锡分别电性连接至第三电极及第四电极。Preferably, it may further include a third carrier, the third surface of the third carrier has a fifth electrode and a sixth electrode, and the fourth surface of the third carrier has a seventh electrode and an eighth electrode, and the fifth electrode and the sixth electrode are respectively electrically connected to the seventh electrode and the eighth electrode, wherein the fifth surface of the first substrate has the ninth electrode and the tenth electrode, and the first electrode and the second electrode are respectively electrically connected to the first electrode through the through hole. The ninth electrode and the tenth electrode, the ninth electrode and the tenth electrode are respectively electrically connected to the fifth electrode and the sixth electrode through silver glue or solder, and the seventh electrode and the eighth electrode are respectively electrically connected to the the third electrode and the fourth electrode.

较佳地,各穿孔内可分别填充有导电材料。Preferably, each through hole can be filled with conductive material respectively.

较佳地,第五电极及第七电极可为一体成形的L形电极,及第六电极及第八电极可为一体成形的L形电极。Preferably, the fifth electrode and the seventh electrode can be integrally formed L-shaped electrodes, and the sixth electrode and the eighth electrode can be integrally formed L-shaped electrodes.

较佳地,第一表面与第五表面可相对。Preferably, the first surface is opposite to the fifth surface.

较佳地,可进一步包含第三载板,设置于第一载板的第五表面上,以支撑第一载板,其中第一表面与第五表面相对。Preferably, it may further include a third carrier disposed on the fifth surface of the first carrier to support the first carrier, wherein the first surface is opposite to the fifth surface.

较佳地,可进一步包含第三载板,第三载板的第三表面具有第五电极及第六电极,及第三载板的第四表面具有第七电极及第八电极,第五电极及第六电极分别电性连接至第七电极及第八电极,其中第一载板的第一电极及第二电极通过银胶或焊锡分别电性连接至第五电极及第六电极,以及第七电极及第八电极通过银胶或焊锡分别电性连接至第三电极及第四电极。Preferably, it may further include a third carrier, the third surface of the third carrier has a fifth electrode and a sixth electrode, and the fourth surface of the third carrier has a seventh electrode and an eighth electrode, and the fifth electrode and the sixth electrode are electrically connected to the seventh electrode and the eighth electrode respectively, wherein the first electrode and the second electrode of the first substrate are respectively electrically connected to the fifth electrode and the sixth electrode through silver glue or solder, and the The seventh electrode and the eighth electrode are respectively electrically connected to the third electrode and the fourth electrode through silver glue or solder.

较佳地,第五电极及第七电极可为一体成形的L形电极,及第六电极及第八电极可为一体成形的L形电极。Preferably, the fifth electrode and the seventh electrode can be integrally formed L-shaped electrodes, and the sixth electrode and the eighth electrode can be integrally formed L-shaped electrodes.

承上所述,依据本发明其可具有一或多个下述优点:Based on the above, according to the present invention, it can have one or more of the following advantages:

1.电极之间通过银胶电性连接,使第一载板的第一表面的第一电极及第二电极通过非打线工艺分别电性连接至第二载板的第二表面的第三电极及第四电极,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。1. The electrodes are electrically connected by silver glue, so that the first electrode and the second electrode on the first surface of the first carrier are respectively electrically connected to the third electrodes on the second surface of the second carrier through a non-bonding process. The electrodes and the fourth electrode do not have the possibility of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

2.电极之间通过焊锡电性连接,使第一载板的第一表面的第一电极及第二电极通过非打线工艺分别电性连接至第二载板的第二表面的第三电极及第四电极,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。2. The electrodes are electrically connected by solder, so that the first electrode and the second electrode on the first surface of the first carrier are respectively electrically connected to the third electrode on the second surface of the second carrier through a non-bonding process And the fourth electrode, there is no fear of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

3.通过穿孔的方式,使电极之间通过非打线工艺电性连接,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。3. Through the method of perforation, the electrodes are electrically connected through a non-bonding process, and there is no doubt about disconnection, which effectively improves the reliability of the components and reduces the packaging space.

4.通过第三载板以支撑第一载板。4. Pass the third carrier to support the first carrier.

附图说明Description of drawings

图1为现有技术的激光二极管的封装结构图。FIG. 1 is a package structure diagram of a laser diode in the prior art.

图2为本发明一实施方式的激光二极管的封装结构图。FIG. 2 is a package structure diagram of a laser diode according to an embodiment of the present invention.

图3为本发明另一实施方式的激光二极管的封装结构图。FIG. 3 is a package structure diagram of a laser diode according to another embodiment of the present invention.

图4为本发明另一实施方式的激光二极管的封装结构图。FIG. 4 is a package structure diagram of a laser diode according to another embodiment of the present invention.

图5为本发明另一实施方式的激光二极管的封装结构图。FIG. 5 is a package structure diagram of a laser diode according to another embodiment of the present invention.

图6为本发明另一实施方式的第一载板结构图。FIG. 6 is a structural diagram of a first carrier according to another embodiment of the present invention.

附图说明:Description of drawings:

1:第一载板1: The first carrier board

2:第二载板2: Second carrier board

3:第三载板3: The third carrier board

4:激光芯片4: Laser chip

5:银胶或焊锡5: Silver glue or solder

6:穿孔6: perforation

11:第一电极11: First electrode

12:第二电极12: Second electrode

13:第三电极13: The third electrode

14:第四电极14: The fourth electrode

15:第五电极15: Fifth electrode

16:第六电极16: The sixth electrode

17:第七电极17: Seventh electrode

18:第八电极18: Eighth electrode

19:第九电极19: ninth electrode

20:第十电极20: Tenth electrode

21:第一表面21: First Surface

22:第二表面22: Second Surface

23:第三表面23: Third Surface

24:第四表面24: Fourth Surface

25:第五表面25: Fifth Surface

具体实施方式Detailed ways

本发明的优点、特征以及达到的技术方法将参照例示性实施例及所附图式进行更详细地描述而更容易理解,且本发明可以不同形式来实现,故不应被理解仅限于此处所陈述的实施例,相反地,对所属技术领域具有通常知识者而言,所提供的实施例将使本公开更加透彻与全面且完整地传达本发明的范畴,且本发明将仅为所附加的申请专利范围所定义。The advantages, features, and technical methods achieved by the present invention will be described in more detail with reference to exemplary embodiments and accompanying drawings to make it easier to understand, and the present invention can be implemented in different forms, so it should not be understood as being limited to what is shown here The stated embodiments, on the contrary, for those skilled in the art, the provided embodiments will make the present disclosure more thorough and complete and fully convey the scope of the present invention, and the present invention will only be appended The scope of the patent application is defined.

本发明下述一或多个实施方式公开一种激光二极管的封装结构。通过下述实施方式所公开的一种激光二极管的封装结构,可通过非打线的方式与电极连接,不具有断线疑虑,有效地提升了元件可靠度。One or more embodiments of the present invention disclose a packaging structure of a laser diode. A packaging structure of a laser diode disclosed in the following embodiments can be connected to electrodes in a non-wire-bonding manner, without any fear of disconnection, and effectively improves component reliability.

请参阅图2,图2为本发明一实施方式的激光二极管的封装结构图。一种激光二极管的封装结构,包含激光芯片4、第一载板1以及第二载板2。激光芯片4,可为激光二极管的发光元件。第一载板1的第一表面21具有第一电极11及第二电极12,而激光芯片4设置于第一载板1的第一表面21上,激光芯片4可通过银胶、焊锡或唯一一次的打线与第一载板1的第二电极12电性连接。另外第二载板2的第二表面22具有第三电极13及第四电极14,而第一载板1是设置于第二载板2的第二表面22上。第一电极11及第二电极12通过非打线工艺分别电性连接至第三电极13及第四电极14,例如:第一电极11及第二电极12可直接通过银胶5分别电性连接至第三电极13及第四电极14,或第一电极11及第二电极12可直接通过焊锡5分别电性连接至第三电极13及第四电极14。具体而言,本发明的电极可由铜、镍、金、银或其合金等导电金属性材质制成,本发明的载板可用树脂、玻璃或陶瓷等具有绝缘性的材料形成。Please refer to FIG. 2 . FIG. 2 is a package structure diagram of a laser diode according to an embodiment of the present invention. A package structure of a laser diode, including a laser chip 4 , a first carrier 1 and a second carrier 2 . The laser chip 4 can be a light emitting element of a laser diode. The first surface 21 of the first carrier 1 has the first electrode 11 and the second electrode 12, and the laser chip 4 is arranged on the first surface 21 of the first carrier 1, the laser chip 4 can be made by silver glue, solder or only One wire bonding is electrically connected to the second electrode 12 of the first carrier 1 . In addition, the second surface 22 of the second carrier 2 has the third electrode 13 and the fourth electrode 14 , and the first carrier 1 is disposed on the second surface 22 of the second carrier 2 . The first electrode 11 and the second electrode 12 are respectively electrically connected to the third electrode 13 and the fourth electrode 14 through a non-bonding process, for example: the first electrode 11 and the second electrode 12 can be directly electrically connected through the silver glue 5 To the third electrode 13 and the fourth electrode 14 , or the first electrode 11 and the second electrode 12 can be directly electrically connected to the third electrode 13 and the fourth electrode 14 respectively through the solder 5 . Specifically, the electrodes of the present invention can be made of conductive metallic materials such as copper, nickel, gold, silver or their alloys, and the carrier of the present invention can be formed of insulating materials such as resin, glass or ceramics.

以上,电极之间通过银胶或焊锡5电性连接,使第一载板1的第一表面21的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第二表面22的第三电极13及第四电极14,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。Above, the electrodes are electrically connected by silver glue or solder 5, so that the first electrode 11 and the second electrode 12 on the first surface 21 of the first carrier 1 are respectively electrically connected to the second carrier by a non-wire bonding process. The third electrode 13 and the fourth electrode 14 on the second surface 22 of the 2 have no fear of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

请参阅图3,图3为本发明另一实施方式的激光二极管的封装结构图。一种激光二极管的封装结构,包含激光芯片4、第一载板1、第二载板2以及第三载板3。激光芯片4,可为激光二极管的发光元件。第一载板1的第一表面21具有第一电极11及第二电极12,而激光芯片4设置于第一载板1的第一表面21上,激光芯片4可通过银胶、焊锡或唯一一次的打线与第一载板1的第二电极12电性连接。另外,第二载板2的第二表面22具有第三电极13及第四电极14,而第一载板1是设置于第二载板2的第二表面22上。此外,第三载板3设置于第一载板1的第五表面25上,以支撑第一载板1。具体而言,第一表面21与第五表面25彼此相对。第一电极11及第二电极12通过非打线工艺分别电性连接至第三电极13及第四电极14,例如:第一电极11及第二电极12可直接通过银胶5分别电性连接至第三电极13及第四电极14,或第一电极11及第二电极12可直接通过焊锡5分别电性连接至第三电极13及第四电极14。具体而言,本发明的电极可由铜、镍、金、银或其合金等导电金属性材质制成,本发明的载板可用树脂、玻璃或陶瓷等具有绝缘性的材料形成。Please refer to FIG. 3 . FIG. 3 is a package structure diagram of a laser diode according to another embodiment of the present invention. A packaging structure of a laser diode, comprising a laser chip 4 , a first carrier 1 , a second carrier 2 and a third carrier 3 . The laser chip 4 can be a light emitting element of a laser diode. The first surface 21 of the first carrier 1 has the first electrode 11 and the second electrode 12, and the laser chip 4 is arranged on the first surface 21 of the first carrier 1, the laser chip 4 can be made by silver glue, solder or only One wire bonding is electrically connected to the second electrode 12 of the first carrier 1 . In addition, the second surface 22 of the second carrier 2 has the third electrode 13 and the fourth electrode 14 , and the first carrier 1 is disposed on the second surface 22 of the second carrier 2 . In addition, the third carrier 3 is disposed on the fifth surface 25 of the first carrier 1 to support the first carrier 1 . Specifically, the first surface 21 and the fifth surface 25 are opposite to each other. The first electrode 11 and the second electrode 12 are respectively electrically connected to the third electrode 13 and the fourth electrode 14 through a non-bonding process, for example: the first electrode 11 and the second electrode 12 can be directly electrically connected through the silver glue 5 To the third electrode 13 and the fourth electrode 14 , or the first electrode 11 and the second electrode 12 can be directly electrically connected to the third electrode 13 and the fourth electrode 14 respectively through the solder 5 . Specifically, the electrodes of the present invention can be made of conductive metallic materials such as copper, nickel, gold, silver or their alloys, and the carrier of the present invention can be formed of insulating materials such as resin, glass or ceramics.

以上,电极之间通过银胶或焊锡5电性连接,使第一载板1的第一表面21的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第二表面22的第三电极13及第四电极14,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。Above, the electrodes are electrically connected by silver glue or solder 5, so that the first electrode 11 and the second electrode 12 on the first surface 21 of the first carrier 1 are respectively electrically connected to the second carrier by a non-wire bonding process. The third electrode 13 and the fourth electrode 14 on the second surface 22 of the 2 have no fear of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

请参阅图4,图4为本发明另一实施方式的激光二极管的封装结构图。一种激光二极管的封装结构,包含激光芯片4、第一载板1、第二载板2以及第三载板3。激光芯片4,可为激光二极管的发光元件。第一载板1的第一表面21具有第一电极11及第二电极12,而激光芯片4设置于第一载板1的第一表面21上,激光芯片4可通过银胶、焊锡或唯一一次的打线与第一载板1的第二电极12电性连接。另外,第二载板2的第二表面22具有第三电极13及第四电极14,而第一载板1是设置于第二载板2的第二表面22上。此外,第三载板3的第三表面23具有第五电极15及第六电极16,以及第三载板3的第四表面24具有第七电极17及第八电极18,第五电极15及第六电极16分别电性连接至第七电极17及第八电极18,例如:第五电极15及第七电极17为一体成形的L形电极,及第六电极16及第八电极18为一体成形的L形电极,但不限于此。第一载板1的第一电极11及第二电极12直接通过银胶或焊锡5分别电性连接至第五电极15及第六电极16,以及第七电极17及第八电极18直接通过银胶或焊锡5分别电性连接至第三电极13及第四电极14。因此,第一载板1的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第三电极13及第四电极14。具体而言,本发明的电极可由铜、镍、金、银或其合金等导电金属性材质制成,本发明的载板可用树脂、玻璃或陶瓷等具有绝缘性的材料形成。Please refer to FIG. 4 . FIG. 4 is a package structure diagram of a laser diode according to another embodiment of the present invention. A packaging structure of a laser diode, comprising a laser chip 4 , a first carrier 1 , a second carrier 2 and a third carrier 3 . The laser chip 4 can be a light emitting element of a laser diode. The first surface 21 of the first carrier 1 has the first electrode 11 and the second electrode 12, and the laser chip 4 is arranged on the first surface 21 of the first carrier 1, the laser chip 4 can be made by silver glue, solder or only One wire bonding is electrically connected to the second electrode 12 of the first carrier 1 . In addition, the second surface 22 of the second carrier 2 has the third electrode 13 and the fourth electrode 14 , and the first carrier 1 is disposed on the second surface 22 of the second carrier 2 . In addition, the third surface 23 of the third carrier 3 has the fifth electrode 15 and the sixth electrode 16, and the fourth surface 24 of the third carrier 3 has the seventh electrode 17 and the eighth electrode 18, the fifth electrode 15 and the The sixth electrode 16 is electrically connected to the seventh electrode 17 and the eighth electrode 18 respectively, for example: the fifth electrode 15 and the seventh electrode 17 are L-shaped electrodes integrally formed, and the sixth electrode 16 and the eighth electrode 18 are integral Shaped L-shaped electrodes, but not limited thereto. The first electrode 11 and the second electrode 12 of the first carrier 1 are directly electrically connected to the fifth electrode 15 and the sixth electrode 16 through silver glue or solder 5, and the seventh electrode 17 and the eighth electrode 18 are directly connected to the fifth electrode 15 and the sixth electrode 18 through silver glue or solder 5. The glue or solder 5 is electrically connected to the third electrode 13 and the fourth electrode 14 respectively. Therefore, the first electrode 11 and the second electrode 12 of the first carrier 1 are respectively electrically connected to the third electrode 13 and the fourth electrode 14 of the second carrier 2 through a non-wire bonding process. Specifically, the electrodes of the present invention can be made of conductive metallic materials such as copper, nickel, gold, silver or their alloys, and the carrier of the present invention can be formed of insulating materials such as resin, glass or ceramics.

以上,电极之间通过银胶或焊锡5电性连接,使第一载板1的第一表面21的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第二表面22的第三电极13及第四电极14,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。Above, the electrodes are electrically connected by silver glue or solder 5, so that the first electrode 11 and the second electrode 12 on the first surface 21 of the first carrier 1 are respectively electrically connected to the second carrier by a non-wire bonding process. The third electrode 13 and the fourth electrode 14 on the second surface 22 of the 2 have no fear of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

请参阅图5及图6,图5为本发明另一实施方式的激光二极管的封装结构图,图6为本发明另一实施方式的第一载板结构图。一种激光二极管的封装结构,包含激光芯片4、第一载板1、第二载板2以及第三载板3。激光芯片4,可为激光二极管的发光元件。第一载板1的第一表面21具有第一电极11及第二电极12,而激光芯片4设置于第一载板1的第一表面21上,激光芯片4可通过银胶、焊锡或唯一一次的打线与第一载板1的第二电极12电性连接。另外,第二载板2的第二表面22具有第三电极13及第四电极14,而第一载板1是设置于第二载板2的第二表面22上。第三载板3的第三表面23具有第五电极15及第六电极16,以及第三载板3的第四表面24具有第七电极17及第八电极18,第五电极15及第六电极16分别电性连接至第七电极17及第八电极18,例如:第五电极15及第七电极17为一体成形的L形电极,及第六电极16及第八电极18为一体成形的L形电极,但不限于此。另外,第一载板1的第五表面25具有第九电极19及第十电极20,而第一表面21与第五表面25彼此相对。第一电极11及第二电极12直接通过穿孔6分别电性连接至第九电极19及第十电极20,各穿孔6内分别填充有导电材料。第一载板1的第九电极19及第十电极20直接通过银胶或焊锡5分别电性连接至第三载板3的第五电极15及第六电极16,以及第三载板3的第七电极17及第八电极18直接通过银胶或焊锡5分别电性连接至第二载板2的第三电极13及第四电极14。因此,第一载板1的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第三电极13及第四电极14。具体而言,本发明的电极可由铜、镍、金、银或其合金等导电金属性材质制成,本发明的载板可用树脂、玻璃或陶瓷等具有绝缘性的材料形成。Please refer to FIG. 5 and FIG. 6 , FIG. 5 is a package structure diagram of a laser diode according to another embodiment of the present invention, and FIG. 6 is a structure diagram of a first carrier board according to another embodiment of the present invention. A packaging structure of a laser diode, comprising a laser chip 4 , a first carrier 1 , a second carrier 2 and a third carrier 3 . The laser chip 4 can be a light emitting element of a laser diode. The first surface 21 of the first carrier 1 has the first electrode 11 and the second electrode 12, and the laser chip 4 is arranged on the first surface 21 of the first carrier 1, the laser chip 4 can be made by silver glue, solder or only One wire bonding is electrically connected to the second electrode 12 of the first carrier 1 . In addition, the second surface 22 of the second carrier 2 has the third electrode 13 and the fourth electrode 14 , and the first carrier 1 is disposed on the second surface 22 of the second carrier 2 . The third surface 23 of the third carrier 3 has the fifth electrode 15 and the sixth electrode 16, and the fourth surface 24 of the third carrier 3 has the seventh electrode 17 and the eighth electrode 18, the fifth electrode 15 and the sixth electrode The electrodes 16 are electrically connected to the seventh electrode 17 and the eighth electrode 18 respectively, for example: the fifth electrode 15 and the seventh electrode 17 are integrally formed L-shaped electrodes, and the sixth electrode 16 and the eighth electrode 18 are integrally formed L-shaped electrodes, but not limited thereto. In addition, the fifth surface 25 of the first carrier 1 has the ninth electrode 19 and the tenth electrode 20 , and the first surface 21 and the fifth surface 25 are opposite to each other. The first electrode 11 and the second electrode 12 are directly electrically connected to the ninth electrode 19 and the tenth electrode 20 respectively through the through holes 6 , and the through holes 6 are respectively filled with conductive materials. The ninth electrode 19 and the tenth electrode 20 of the first carrier 1 are directly electrically connected to the fifth electrode 15 and the sixth electrode 16 of the third carrier 3 through silver glue or solder 5, and the third electrode 3 of the third carrier 3. The seventh electrode 17 and the eighth electrode 18 are directly electrically connected to the third electrode 13 and the fourth electrode 14 of the second carrier 2 through silver glue or solder 5 . Therefore, the first electrode 11 and the second electrode 12 of the first carrier 1 are respectively electrically connected to the third electrode 13 and the fourth electrode 14 of the second carrier 2 through a non-wire bonding process. Specifically, the electrodes of the present invention can be made of conductive metallic materials such as copper, nickel, gold, silver or their alloys, and the carrier of the present invention can be formed of insulating materials such as resin, glass or ceramics.

综上所述,本发明的电极之间通过银胶或焊锡5及穿孔6电性连接,使第一载板1的第一表面21的第一电极11及第二电极12通过非打线工艺分别电性连接至第二载板2的第二表面22的第三电极13及第四电极14,不具有断线疑虑,有效地提升了元件可靠度且缩减封装空间。To sum up, the electrodes of the present invention are electrically connected through silver glue or solder 5 and through holes 6, so that the first electrode 11 and the second electrode 12 on the first surface 21 of the first carrier board 1 pass through a non-wire bonding process. The third electrode 13 and the fourth electrode 14 respectively electrically connected to the second surface 22 of the second carrier board 2 do not have the possibility of disconnection, which effectively improves the reliability of the components and reduces the packaging space.

以上所述的实施例仅为说明本发明的技术思想及特点,其目的在使本领域技术人员能够了解本发明的内容并据以实施,当不能以之限定本发明的保护范围,即大凡依本发明所揭示的精神所作的均等变化或修饰,仍应涵盖在本发明的权利要求书的保护范围内。The above-described embodiments are only to illustrate the technical ideas and characteristics of the present invention, and its purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. When it cannot limit the protection scope of the present invention, that is, generally The equal changes or modifications made by the spirit disclosed in the present invention shall still fall within the scope of protection of the claims of the present invention.

Claims (10)

1. a kind of encapsulating structure of laser diode, includes:
One laser chip;
One first surface of one first support plate, first support plate has a first electrode and a second electrode, which sets It is placed on the first surface of first support plate;And
One second surface of one second support plate, second support plate has a third electrode and one the 4th electrode;
Wherein the first electrode and the second electrode are respectively and electrically connected to the third electrode and the 4th by non-routing technique Electrode.
2. the encapsulating structure of laser diode as described in claim 1, wherein the first electrode and the second electrode pass through silver Glue is respectively and electrically connected to the third electrode and the 4th electrode.
3. the encapsulating structure of laser diode as described in claim 1, wherein the first electrode and the second electrode pass through weldering Tin is respectively and electrically connected to the third electrode and the 4th electrode.
4. the encapsulating structure of laser diode as described in claim 1, wherein further including a third support plate, which is carried There is one the 4th surface of one the 5th electrode and one the 6th electrode and the third support plate to have one the 7th electricity on one third surface of plate Pole and one the 8th electrode, the 5th electrode and the 6th electrode are respectively and electrically connected to the 7th electrode and the 8th electrode, In first support plate one the 5th surface have one the 9th electrode and 1 the tenth electrode, the first electrode and the second electrode difference It is electrically connected to the 9th electrode and the tenth electrode by a perforation, the 9th electrode and the tenth electrode pass through elargol or weldering Tin is respectively and electrically connected to the 5th electrode and the 6th electrode and the 7th electrode and the 8th electrode and passes through elargol or weldering Tin is respectively and electrically connected to the third electrode and the 4th electrode.
5. the encapsulating structure of laser diode as claimed in claim 4, wherein being respectively separately filled with conductive material in the perforation.
6. the encapsulating structure of laser diode as claimed in claim 4, wherein the 5th electrode and the 7th electrode are integrated The L shape electrode that the L shape electrode and the 6th electrode and the 8th electrode of forming are one of the forming.
7. the encapsulating structure of laser diode as claimed in claim 4, wherein the first surface is opposite with the 5th surface.
8. the encapsulating structure of laser diode as described in claim 1 is set to this wherein further including a third support plate On one the 5th surface of the first support plate, to support first support plate, wherein the first surface is opposite with the 5th surface.
9. the encapsulating structure of laser diode as described in claim 1, wherein further including a third support plate, which is carried There is one the 4th surface of one the 5th electrode and one the 6th electrode and the third support plate to have one the 7th electricity on one third surface of plate Pole and one the 8th electrode, the 5th electrode and the 6th electrode are respectively and electrically connected to the 7th electrode and the 8th electrode, In first support plate the first electrode and the second electrode by elargol or scolding tin be respectively and electrically connected to the 5th electrode and 6th electrode and the 7th electrode and the 8th electrode by elargol or scolding tin be respectively and electrically connected to the third electrode and 4th electrode.
10. the encapsulating structure of laser diode as claimed in claim 9, wherein the 5th electrode and the 7th electrode are integrated The L shape electrode that the L shape electrode and the 6th electrode and the 8th electrode of forming are one of the forming.
CN201810184324.3A 2018-03-06 2018-03-06 The encapsulating structure of laser diode Pending CN110233419A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112688159A (en) * 2021-03-19 2021-04-20 武汉仟目激光有限公司 Semiconductor laser chip package based on dual wavelength
CN114336264A (en) * 2021-03-19 2022-04-12 武汉仟目激光有限公司 Laser detection method based on dual-wavelength laser

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703561B1 (en) * 2001-09-06 2004-03-09 Finisar Corporation Header assembly having integrated cooling device
CN2819547Y (en) * 2005-06-16 2006-09-20 邹庆福 Package Structure of Laser Diode
CN1901238A (en) * 2005-07-20 2007-01-24 桦晶科技股份有限公司 Light-emitting diode (LED) packaging structure without wire bonding
CN101552214A (en) * 2008-04-02 2009-10-07 力成科技股份有限公司 Multi-chip stacking method and structure with halved routing process
CN107508141A (en) * 2017-08-16 2017-12-22 青岛海信宽带多媒体技术有限公司 The laser and optical module of a kind of coaxial packaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703561B1 (en) * 2001-09-06 2004-03-09 Finisar Corporation Header assembly having integrated cooling device
CN2819547Y (en) * 2005-06-16 2006-09-20 邹庆福 Package Structure of Laser Diode
CN1901238A (en) * 2005-07-20 2007-01-24 桦晶科技股份有限公司 Light-emitting diode (LED) packaging structure without wire bonding
CN101552214A (en) * 2008-04-02 2009-10-07 力成科技股份有限公司 Multi-chip stacking method and structure with halved routing process
CN107508141A (en) * 2017-08-16 2017-12-22 青岛海信宽带多媒体技术有限公司 The laser and optical module of a kind of coaxial packaging

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112688159A (en) * 2021-03-19 2021-04-20 武汉仟目激光有限公司 Semiconductor laser chip package based on dual wavelength
CN114336264A (en) * 2021-03-19 2022-04-12 武汉仟目激光有限公司 Laser detection method based on dual-wavelength laser

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