CN110231731B - Thin film transistor liquid crystal display and method of fabricating the same - Google Patents
Thin film transistor liquid crystal display and method of fabricating the same Download PDFInfo
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- CN110231731B CN110231731B CN201910407664.2A CN201910407664A CN110231731B CN 110231731 B CN110231731 B CN 110231731B CN 201910407664 A CN201910407664 A CN 201910407664A CN 110231731 B CN110231731 B CN 110231731B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Liquid Crystal (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Polarising Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The present disclosure provides a thin film transistor liquid crystal display and a method of fabricating the same. The thin film transistor liquid crystal display comprises a backlight plate, a liquid crystal module arranged above the backlight plate, a wave plate alignment film arranged above the liquid crystal module, a first phase difference wave plate arranged above the wave plate alignment film, a thin film transistor layer arranged above the first phase difference wave plate, a second phase difference wave plate arranged above the thin film transistor layer, and a light filtering polaroid arranged above the second phase difference wave plate, so that the photo-induced leakage current is reduced, and the reflection of natural light caused by the reflection of metal wires on the side of the thin film transistor is reduced.
Description
[ technical field ] A method for producing a semiconductor device
The present disclosure relates to the field of display technologies, and in particular, to a thin film transistor liquid crystal display and a method for manufacturing the same.
[ background of the invention ]
The tft-lcd has the advantages of low power consumption, high contrast, and space saving, and has become the most popular display device in the market. Low temperature polysilicon is widely used in the fabrication of medium-small sized high resolution thin film transistor liquid crystal displays and active matrix organic light emitting diodes or panels of active matrix organic light emitting diodes.
In the conventional low-temperature polysilicon array technology, a top gate is usually adopted and a light shielding layer structure is additionally arranged, wherein a light shielding layer mask is required to be additionally arranged for preparing the light shielding layer, and an opaque pattern is formed below a thin film transistor channel. How to effectively reduce the photo-induced leakage current through the improvement of the device structure on the basis of saving the shading layer shade, reducing the product manufacturing period and reducing the production cost is an important content of the development of the low-temperature polysilicon thin film transistor liquid crystal display array technology.
Therefore, it is desirable to provide a thin film transistor display device and a method for fabricating the same to solve the problems of the prior art.
[ summary of the invention ]
To solve the above problems, the present disclosure provides a thin film transistor display device and a method for manufacturing the same, which can reduce photo-generated leakage current and reduce reflection of natural light at metal wirings on the thin film transistor side.
To achieve the above object, the present disclosure provides a thin film transistor liquid crystal display, which comprises a backlight panel; the liquid crystal module is arranged above the backlight plate; the wave plate alignment film is arranged above the liquid crystal module; the first phase difference wave plate is arranged above the wave plate alignment film; the thin film transistor layer is arranged above the first phase difference wave plate; the second phase difference wave plate is arranged above the thin film transistor layer; and a filter polarizer disposed above the second phase difference wave plate.
In one embodiment of the present disclosure, the liquid crystal module includes a liquid crystal layer; the color film alignment film is arranged below the liquid crystal layer; the color film is arranged below the color film alignment film; and the color film polaroid is arranged below the color film.
In one embodiment of the present disclosure, the first phase difference wave plate is a 3 λ/4 wave plate.
In one embodiment of the present disclosure, the second phase difference wave plate is a λ/4 wave plate.
In one embodiment of the present disclosure, the materials of the first phase difference wave plate and the second phase difference wave plate include polycarbonate and polyvinyl chloride.
In order to achieve the above object, the present disclosure further provides a method for manufacturing a thin film transistor liquid crystal display, the method comprising providing a thin film transistor layer, attaching a first phase difference wave plate below the thin film transistor layer; attaching a color film alignment film below the first phase difference wave plate; attaching a second phase difference wave plate above the thin film transistor layer; attaching a light filtering polaroid above the second phase difference wave plate; arranging a liquid crystal display module below the color film alignment film; and a backlight plate is arranged below the liquid crystal display module.
In one embodiment of the present disclosure, the liquid crystal display module includes a liquid crystal layer; the color film alignment film is arranged below the liquid crystal layer; the color film is arranged below the color film alignment film; and the color film polaroid is arranged below the color film.
In one embodiment of the present disclosure, the first phase difference wave plate is a 3 λ/4 wave plate.
In one embodiment of the present disclosure, the second phase difference wave plate is a λ/4 wave plate.
In one embodiment of the present disclosure, the materials of the first phase difference wave plate and the second phase difference wave plate include polycarbonate and polyvinyl chloride.
The thin film transistor liquid crystal display comprises a backlight plate, a liquid crystal module arranged above the backlight plate, a wave plate alignment film arranged above the liquid crystal module, a first phase difference wave plate arranged above the wave plate alignment film, a thin film transistor layer arranged above the first phase difference wave plate, a second phase difference wave plate arranged above the thin film transistor layer and a light filtering polaroid arranged above the second phase difference wave plate, so that leakage current is reduced, and reflection caused by reflection of natural light on metal wires on the side of the thin film transistor is reduced.
In order to make the aforementioned and other aspects of the present disclosure more comprehensible, preferred embodiments accompanied with figures are described in detail below:
[ description of the drawings ]
FIG. 1 is a schematic diagram of a TFT-LCD according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a TFT-LCD according to an embodiment of the present disclosure;
FIG. 3 is a flow chart illustrating a method of fabricating a TFT-LCD according to an embodiment of the present disclosure.
[ detailed description ] embodiments
The following description of the embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments in which the disclosure may be practiced. Directional phrases used in this disclosure, such as [ upper ], [ lower ], [ front ], [ back ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure.
In the drawings, elements having similar structures are denoted by the same reference numerals.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a tft-lcd according to an embodiment of the present disclosure. The thin film transistor liquid crystal display comprises a backlight plate B1; the liquid crystal module 200 is arranged above the backlight plate B1; a wave plate alignment film 300 disposed above the liquid crystal module 200; a first retardation wave plate 400 disposed above the wave plate alignment film 300; a thin film transistor layer 500 disposed above the first phase difference wave plate 400; the second phase difference wave plate 600 is arranged above the thin film transistor layer 500; and a filtering polarizer 700 disposed above the second phase difference wave plate 600.
In the structural arrangement of the tft-lcd according to the present disclosure, since the liquid crystal module 200 includes the light shielding sheet, the light emitted from the backlight B1 is shielded, and the metal wires located on the polysilicon channel of the tft layer 500 can also shield the light. Therefore, the light emitted by the backlight plate B1 is prevented from directly irradiating the polysilicon channel on the thin film transistor layer 500 to generate photo-generated leakage current.
Therefore, in the structure of the transistor liquid crystal display of the present disclosure, the liquid crystal module 200 and the metal lines on the polysilicon channel of the thin film transistor layer 500 block the light emitted from the backlight B1, so as to achieve the effect of reducing the number of light shielding layers disposed on the thin film transistor layer 500.
In one embodiment of the present disclosure, the first phase difference wave plate 400 is a 3 λ/4 wave plate.
In one embodiment of the present disclosure, the first retardation plate 400 is made of a film material including Polycarbonate (PC) or polyvinyl chloride (PVC) by uniaxial stretching.
In one embodiment of the present disclosure, the second phase difference wave plate 600 is a λ/4 wave plate.
In one embodiment of the present disclosure, the second phase difference wave plate 600 is made of a film material including Polycarbonate (PC) or polyvinyl chloride (PVC) by uniaxial stretching.
By making the included angle between the polarization direction of the filtering polarizer 700 and the o-axis and e-axis of the second phase difference wave plate 600 be 45 °, the incident light passing through the second phase difference wave plate 600 cannot exit the filtering polarizer 700 after being reflected by the metal wire of the thin film transistor layer 500, so as to achieve the effect of reducing the reflection of the natural light on the metal wire on the thin film transistor side. Further, describing that the incident linearly polarized light is converted into left-handed circularly polarized light, when the incident linearly polarized light is converted into left-handed circularly polarized light by the second phase difference wave plate 600, the left-handed circularly polarized light is converted into right-handed circularly polarized light after being reflected by the metal wire of the thin film transistor layer 500, and the right-handed circularly polarized light is converted into linearly polarized light perpendicular to the filtering polarizer 700 after passing through the second phase difference wave plate 600, so that the filtering polarizer 700 cannot be emitted.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a tft-lcd according to an embodiment of the disclosure. The liquid crystal module comprises a liquid crystal layer 210; a color film alignment film 220 disposed below the liquid crystal layer 210; a color film 230 disposed below the color film alignment film 220; and a color film polarizer 240 disposed below the color film 230.
In an embodiment of the present disclosure, the color film 230 further includes a light shielding film.
Referring to fig. 3, fig. 3 is a flow chart illustrating a method for fabricating a tft-lcd according to an embodiment of the present disclosure. The manufacturing method of the thin film transistor liquid crystal display comprises the following steps:
process S1: and providing a thin film transistor layer, and attaching a first phase difference wave plate below the thin film transistor layer.
In the process S2, a color film alignment film is attached below the first phase difference wave plate.
And a second phase difference wave plate is attached above the thin film transistor layer in the process S3.
And a process S4, attaching a filter polarizer above the second phase difference wave plate.
And a process S5, arranging a liquid crystal display module below the color film alignment film.
And a process S6, arranging a backlight plate below the liquid crystal display module.
In one embodiment of the present disclosure, the liquid crystal display module includes a liquid crystal layer; the color film alignment film is arranged below the liquid crystal layer; the color film is arranged below the color film alignment film; and the color film polaroid is arranged below the color film.
In one embodiment of the present disclosure, the first phase difference wave plate is a 3 λ/4 wave plate.
In one embodiment of the present disclosure, the second phase difference wave plate is a λ/4 wave plate.
In one embodiment of the present disclosure, the materials of the first phase difference wave plate and the second phase difference wave plate include polycarbonate and polyvinyl chloride.
In summary, in the thin film transistor liquid crystal display according to the embodiment of the disclosure, the thin film transistor liquid crystal display includes a backlight plate, a liquid crystal module disposed above the backlight plate, a wave plate alignment film disposed above the liquid crystal module, a first phase difference wave plate disposed above the wave plate alignment film, a thin film transistor layer disposed above the first phase difference wave plate, a second phase difference wave plate disposed above the thin film transistor layer, and a light filtering polarizer disposed above the second phase difference wave plate, so as to reduce a photo-generated leakage current and reduce a reflection of natural light caused by a metal wire reflection at a side of the thin film transistor.
The foregoing is merely a preferred embodiment of the present disclosure, and it should be noted that modifications and refinements may be made by those skilled in the art without departing from the principle of the present disclosure, and these modifications and refinements should also be construed as the protection scope of the present disclosure.
Claims (10)
1. A thin film transistor liquid crystal display, comprising:
a backlight plate;
the liquid crystal module is arranged above the backlight plate;
the wave plate alignment film is arranged above the liquid crystal module;
the first phase difference wave plate is arranged above the wave plate alignment film;
the thin film transistor layer is arranged above the first phase difference wave plate;
the second phase difference wave plate is arranged above the thin film transistor layer; and
the light filtering polaroid is arranged above the second phase difference wave plate;
the display light output by the backlight plate passes through the liquid crystal module and then is converted into the direction of an optical axis through the first phase difference wave plate and the second phase difference wave plate;
the liquid crystal module comprises a shading sheet which has a shading effect on light emitted by the backlight plate, and the phenomenon that the light emitted by the backlight plate directly irradiates a polycrystalline silicon channel on the thin film transistor layer to generate photo-induced leakage current is avoided.
2. The thin film transistor liquid crystal display of claim 1, wherein the liquid crystal module comprises:
a liquid crystal layer;
the color film alignment film is arranged below the liquid crystal layer;
the color film is arranged below the color film alignment film; and
and the color film polaroid is arranged below the color film.
3. The thin film transistor liquid crystal display of claim 1, wherein the first phase difference wave plate is a 3 λ/4 wave plate.
4. The thin film transistor liquid crystal display of claim 1, wherein the second phase difference wave plate is a λ/4 wave plate.
5. The thin film transistor liquid crystal display of claim 1, wherein the material of the first phase difference wave plate and the second phase difference wave plate comprises polycarbonate and polyvinyl chloride.
6. A method for manufacturing a thin film transistor liquid crystal display, comprising:
providing a thin film transistor layer, and attaching a first phase difference wave plate below the thin film transistor layer;
attaching a color film alignment film below the first phase difference wave plate;
attaching a second phase difference wave plate above the thin film transistor layer;
attaching a light filtering polaroid above the second phase difference wave plate;
arranging a liquid crystal display module below the color film alignment film;
a backlight plate is arranged below the liquid crystal display module;
the display light output by the backlight plate passes through the liquid crystal module and then is converted into the direction of an optical axis through the first phase difference wave plate and the second phase difference wave plate;
the liquid crystal module comprises a shading sheet which has a shading effect on light emitted by the backlight plate, and the phenomenon that the light emitted by the backlight plate directly irradiates a polycrystalline silicon channel on the thin film transistor layer to generate photo-induced leakage current is avoided.
7. The method of claim 6, wherein the liquid crystal display module comprises:
a liquid crystal layer;
the color film alignment film is arranged below the liquid crystal layer;
the color film is arranged below the color film alignment film;
and the color film polaroid is arranged below the color film.
8. The method of claim 6, wherein the first retardation wave plate is a 3 λ/4 wave plate.
9. The method of claim 6, wherein the second phase difference wave plate is a λ/4 wave plate.
10. The method of claim 6, wherein the first and second retardation plates are made of polycarbonate and polyvinyl chloride.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407664.2A CN110231731B (en) | 2019-05-16 | 2019-05-16 | Thin film transistor liquid crystal display and method of fabricating the same |
| PCT/CN2019/104867 WO2020228197A1 (en) | 2019-05-16 | 2019-09-09 | Thin film transistor liquid crystal display and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910407664.2A CN110231731B (en) | 2019-05-16 | 2019-05-16 | Thin film transistor liquid crystal display and method of fabricating the same |
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| Publication Number | Publication Date |
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| CN110231731A CN110231731A (en) | 2019-09-13 |
| CN110231731B true CN110231731B (en) | 2021-07-23 |
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| CN201910407664.2A Active CN110231731B (en) | 2019-05-16 | 2019-05-16 | Thin film transistor liquid crystal display and method of fabricating the same |
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| WO (1) | WO2020228197A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100433659B1 (en) * | 2001-05-17 | 2004-05-31 | 비오이 하이디스 테크놀로지 주식회사 | Apparatus for thin film transistor liquid crystal display device |
| JP4551246B2 (en) * | 2005-03-04 | 2010-09-22 | シャープ株式会社 | Liquid crystal display |
| JP4923921B2 (en) * | 2006-09-28 | 2012-04-25 | ソニー株式会社 | Liquid crystal device and electronic device |
| CN101377587A (en) * | 2007-08-30 | 2009-03-04 | 颖台科技股份有限公司 | Liquid crystal display and optical film |
| CN201174012Y (en) * | 2008-04-07 | 2008-12-31 | 信利半导体有限公司 | Semi-transmission semi-reflection TFT liquid crystal display |
| EP2383604B1 (en) * | 2009-01-27 | 2016-02-24 | Sharp Kabushiki Kaisha | Liquid crystal display apparatus |
| KR101882636B1 (en) * | 2015-01-09 | 2018-07-26 | 후지필름 가부시키가이샤 | Optical film, liquid crystal display device and method for producing optical film |
| US9964799B2 (en) * | 2015-03-17 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| CN107735723A (en) * | 2015-06-23 | 2018-02-23 | 夏普株式会社 | Liquid crystal display panel |
| US10591767B2 (en) * | 2015-07-29 | 2020-03-17 | Sharp Kabushiki Kaisha | Sunlight readable LCD with uniform in-cell retarder |
| CN105974649A (en) * | 2016-07-19 | 2016-09-28 | 京东方科技集团股份有限公司 | Display device and display method |
| CN110709761B (en) * | 2017-05-31 | 2022-06-28 | 夏普株式会社 | Liquid crystal display panel and liquid crystal display device |
| CN107884982B (en) * | 2017-12-27 | 2020-06-05 | 惠州市华星光电技术有限公司 | Liquid crystal display screen |
| CN108490675A (en) * | 2018-03-20 | 2018-09-04 | 惠州市华星光电技术有限公司 | A kind of liquid crystal display and preparation method thereof |
| CN108919538A (en) * | 2018-09-29 | 2018-11-30 | 信利光电股份有限公司 | A kind of display and electronic device |
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| WO2020228197A1 (en) | 2020-11-19 |
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