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CN110208676A - Front end reads the equivalent noise charge test circuit and test method of integrated circuit - Google Patents

Front end reads the equivalent noise charge test circuit and test method of integrated circuit Download PDF

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CN110208676A
CN110208676A CN201910419196.0A CN201910419196A CN110208676A CN 110208676 A CN110208676 A CN 110208676A CN 201910419196 A CN201910419196 A CN 201910419196A CN 110208676 A CN110208676 A CN 110208676A
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integrated circuit
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end readout
readout integrated
equivalent noise
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高武
段懿玮
姚英朋
李志军
周军
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Northwestern Polytechnical University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2856Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads

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Abstract

本发明涉及一种前端读出集成电路的等效噪声电荷测试电路及测试方法,根据前端读出芯片的等效噪声电荷与探测器电容两者之间的关系,首先将前端读出芯片置于测量系统内,完成电气测试准备。其次,利用FPGA控制开关的状态实现不同的探测器电容值,并测量出不同电容下的等效噪声电荷值,通过线性拟合计算出等效噪声斜率。再次,将输入端邦定线挑断,计算出零输入电容条件下的等效噪声电荷值。最后,提出测试得到的前端读出集成电路等效噪声电荷公式。该方法能够实现前端读出集成电路等效噪声电荷参数的全自动测试,适合于大批量前端读出集成电路芯片测试,效率高,成本低,对于前端读出集成电路的性能评价具有科学的指导意义。

The invention relates to a front-end readout integrated circuit equivalent noise charge test circuit and a test method. According to the relationship between the equivalent noise charge of the front-end readout chip and the detector capacitance, firstly, the front-end readout chip is placed in the Within the measurement system, complete electrical test preparation. Secondly, the state of the FPGA control switch is used to realize different detector capacitance values, and the equivalent noise charge values under different capacitances are measured, and the equivalent noise slope is calculated by linear fitting. Again, break the bonding wire at the input end and calculate the equivalent noise charge value under the condition of zero input capacitance. Finally, the equivalent noise charge formula of the front-end readout integrated circuit obtained from the test is proposed. This method can realize the fully automatic test of the equivalent noise charge parameters of the front-end readout integrated circuit, is suitable for the test of large-scale front-end readout integrated circuit chips, has high efficiency and low cost, and has scientific guidance for the performance evaluation of the front-end readout integrated circuit significance.

Description

前端读出集成电路的等效噪声电荷测试电路及测试方法Equivalent noise charge test circuit and test method for front-end readout integrated circuit

技术领域technical field

本发明属于前端读出集成电路的等效噪声电荷测试电路及测试方法,涉及采用基于FPGA的测试电路对模拟前端读出集成电路的等效噪声电荷进行自动测试。The invention belongs to an equivalent noise charge test circuit and a test method of a front-end readout integrated circuit, and relates to an FPGA-based test circuit for automatically testing the equivalent noise charge of an analog front-end readout integrated circuit.

背景技术Background technique

前端读出集成电路是半导体辐射探测器系统的核心电子元器件。由电荷灵敏放大器和脉冲成形放大器组成的模拟前端读出集成电路简化原理图如图1所示。等效噪声电荷(ENC)是评价前端读出集成电路的一个重要性能指标,其定义为:The front-end readout integrated circuit is the core electronic component of the semiconductor radiation detector system. The simplified schematic diagram of the analog front-end readout IC consisting of a charge-sensitive amplifier and a pulse-shaping amplifier is shown in Figure 1. Equivalent noise charge (ENC) is an important performance index for evaluating front-end readout integrated circuits, which is defined as:

其中,是前端读出集成电路输出电压积分噪声均方根值,AQ为前端读出集成电路电荷-电压转换增益。ENC的单位为ENC反映了芯片中前端读出集成电路的噪声水平。ENC值越小,表明前端读出集成电路的噪声水平越低。精确测量前端读出集成电路的ENC对于整个半导体辐射探测器系统的噪声设计非常重要。特别是在大批量前端读出集成电路芯片研发过程中,采用全自动的测试方法,对于降低前端读出芯片的测试成本非常必要。in, is the root mean square value of the integrated noise of the output voltage of the front-end readout integrated circuit, and A Q is the charge-voltage conversion gain of the front-end readout integrated circuit. The unit of ENC is ENC reflects the noise level of the front-end readout integrated circuit in the chip. The smaller the ENC value, the lower the noise level of the front-end readout IC. Accurately measuring the ENC of the front-end readout IC is very important for the noise design of the entire semiconductor radiation detector system. Especially in the development process of large-scale front-end readout integrated circuit chips, it is very necessary to adopt a fully automatic test method to reduce the test cost of front-end readout chips.

文献1:W.Gao,S.Li,Y.Duan,et al.Design and Characterization of a Low-Noise Front-End Readout ASIC in 0.18μm CMOS Technology for CZT/Si-PINDetectors[J]. IEEE Transactions on Nuclear Science,2018,PP(99):1-1。详细介绍了前端读出集成电路的系统级ENC模型,可以推导得出前端读出集成电路的ENC与探测器寄生电容Cd之间的关系为:Document 1: W.Gao, S.Li, Y.Duan, et al.Design and Characterization of a Low-Noise Front-End Readout ASIC in 0.18μm CMOS Technology for CZT/Si-PINDetectors[J]. IEEE Transactions on Nuclear Science, 2018, PP(99): 1-1. The system-level ENC model of the front-end readout integrated circuit is introduced in detail, and the relationship between the ENC of the front-end readout integrated circuit and the parasitic capacitance C d of the detector can be deduced as:

其中,k为玻尔兹曼常数,T为环境绝对温度,gm0为前端读出芯片前置放大器输入晶体管的跨导,常数γn当输入管工作在饱和区时取2/3,tp为前端读出芯片成形器的成形时间,Kf为低频噪声的系数,Cox为单位面积的栅氧化层电容,W0和L0分别为芯片输入晶体管的宽度和长度,Cf为前置放大器的反馈电容,Cin为前置放大器输入端电容,ENCi为与电流噪声相关的分量,ENCconst为与电源噪声相关的分量。当前端读出集成电路制造完成后,k、T、γn、tp、gm0、Kf、Cox、W0、L0、Cf、Cin均为常数,当Cd足够大时,公式(1)中后两项之和远小于第一项的值,则ENC可以近似为Among them, k is the Boltzmann constant, T is the absolute temperature of the environment, g m0 is the transconductance of the input transistor of the preamplifier of the front-end readout chip, the constant γ n is 2/3 when the input tube works in the saturation region, and t p is the shaping time of the front-end readout chip shaper, K f is the coefficient of low frequency noise, C ox is the gate oxide layer capacitance per unit area, W 0 and L 0 are the width and length of the input transistor of the chip, and C f is the front The feedback capacitance of the amplifier, C in is the capacitance of the input terminal of the preamplifier, ENC i is the component related to the current noise, and ENC const is the component related to the power supply noise. When the front-end readout integrated circuit is fabricated, k, T, γ n , t p , g m0 , K f , C ox , W 0 , L 0 , C f , C in , and are constants, when C d is large enough, the sum of the last two terms in formula (1) is much smaller than the value of the first term, then ENC can be approximated as

且ENC0=k(Cf+Cin),则公式(2)可以改写为make And ENC 0 =k(C f +C in ), then formula (2) can be rewritten as

ENC=ENC0+kCd (4)ENC=ENC 0 +kC d (4)

因此,测试ENC随Cd变化的关系,需要完成ENC0和k两个参数的测试。Therefore, to test the relationship between ENC and C d changes, it is necessary to complete the test of the two parameters of ENC 0 and k.

文献2:刘辉.辐射探测前端读出集成电路可测性设计技术研究[D].西北工业大学,2016.。提出了一种手动测量芯片等效噪声电荷的方法,测试系统如图2所示,分别由被测芯片、电源及偏置电流产生电路、耦合电容、可变电容电路、驱动放大器等组成。使用该测试系统测量ENC共有两步。第一步,通过将图中电容Cx手动替换成不同电容值的直插式电容器,依次求出对应电容值下的ENC测试值,通过拟合可以得到k;第二步,挑断前端读出集成电路输入端的邦定线,测试得到零输入电容条件下的输出噪声,计算得到ENC0Document 2: Liu Hui. Research on testability design technology of radiation detection front-end readout integrated circuit [D]. Northwestern Polytechnical University, 2016. A method for manually measuring the equivalent noise charge of a chip is proposed. The test system is shown in Figure 2, which consists of the chip under test, power supply and bias current generation circuit, coupling capacitor, variable capacitor circuit, and drive amplifier. There are two steps to measuring ENC with this test system. In the first step, by manually replacing the capacitor C x in the figure with an in-line capacitor with a different capacitance value, the ENC test value under the corresponding capacitance value is obtained in turn, and k can be obtained through fitting; the second step is to pick out the front-end read Get the bonding wire at the input end of the integrated circuit, test the output noise under the condition of zero input capacitance, and calculate ENC 0 .

使用该方法测试ENC,每次测量都需要手动拔插电容器,操作起来较为复杂,测试效率低下,不适合大批量前端读出芯片的测试。而且,多次插拔会引起接触点损坏,导致随机误差,使测量结果不精确。Using this method to test ENC requires manual plugging and unplugging of capacitors for each measurement. The operation is more complicated and the test efficiency is low. It is not suitable for testing large-scale front-end readout chips. Moreover, multiple plugging and unplugging can cause damage to the contact points, resulting in random errors and inaccurate measurements.

发明内容Contents of the invention

要解决的技术问题technical problem to be solved

为了避免现有技术的不足之处,本发明提出一种前端读出集成电路的等效噪声电荷测试电路及测试方法,用于大批量前端读出集成电路芯片等效噪声电荷性能的测试,提高测试效率,降低测试成本。同时,也为辐射探测器前端读出系统的低噪声设计提供技术支持。In order to avoid the deficiencies of the prior art, the present invention proposes a front-end readout integrated circuit equivalent noise charge test circuit and a test method for testing the equivalent noise charge performance of a large number of front-end readout integrated circuit chips, improving Test efficiency, reduce test cost. At the same time, it also provides technical support for the low-noise design of the radiation detector front-end readout system.

技术方案Technical solutions

一种前端读出集成电路的等效噪声电荷测试电路,包括电源及偏置电流产生电路、信号发生器和耦合电容;其特征在于还包括FPGA芯片、晶振、N个电容以及与电容串联的MOS管;信号发生器串接耦合电容CT,与被测芯片之间并联N个电容与MOS 管的串联电路,每个MOS管的G极与FPGA芯片的I/O端口连接;晶振的信号输出端与FPGA芯片的时钟端口连接;FPGA芯片的电源端口与电源及偏置电流连接。所述N个电容的容值不同,选择N个电容的容值遵循下述原则:A front-end readout integrated circuit equivalent noise charge test circuit, including a power supply and a bias current generating circuit, a signal generator and a coupling capacitor; it is characterized in that it also includes an FPGA chip, a crystal oscillator, N capacitors and a MOS connected in series with the capacitor tube; the signal generator is connected in series with the coupling capacitor C T , and a series circuit of N capacitors and MOS tubes is connected in parallel with the chip under test, and the G pole of each MOS tube is connected to the I/O port of the FPGA chip; the signal output of the crystal oscillator The terminal is connected to the clock port of the FPGA chip; the power port of the FPGA chip is connected to the power supply and the bias current. The capacitance values of the N capacitors are different, and the capacitance values of the N capacitors are selected according to the following principles:

其中,Cd为探测器寄生电容。Among them, C d is the parasitic capacitance of the detector.

一种利用所述前端读出集成电路的等效噪声电荷测试电路测试芯片的等效噪声电荷的方法,其特征在于步骤如下:A method of using the front end to read out the equivalent noise charge of the integrated circuit to test the equivalent noise charge of the chip, characterized in that the steps are as follows:

步骤1、测试前端读出集成电路的电荷转换增益:将被测前端读出集成电路的输入端口与测试电路的耦合电容CT输出端连接,被测前端读出集成电路的电源端口与测试电路的电源及偏置电流产生电路的输出端口连接;被测前端读出集成电路的读出通道的输出端口与示波器连接;Step 1, test the charge conversion gain of the front-end readout integrated circuit: connect the input port of the tested front-end readout integrated circuit with the coupling capacitor CT output end of the test circuit, and connect the power port of the tested front-end readout integrated circuit with the test circuit The power supply and the output port of the bias current generating circuit are connected; the output port of the readout channel of the readout integrated circuit of the front end under test is connected with the oscilloscope;

设置好信号发生器中电压脉冲的大小ΔVin,记录此时的耦合电容Cc的大小,那么此时前端读出集成电路的输入电荷量QinSet the size of the voltage pulse ΔV in in the signal generator, record the size of the coupling capacitance C c at this time, then the input charge Q in of the front-end readout integrated circuit at this time is

利用示波器测量得到前端读出集成电路的输出电压交流值vout,通过下式 Use the oscilloscope to measure the output voltage AC value v out of the front-end readout integrated circuit, through the following formula

得到前端读出电路的电荷转换增益AQObtain the charge conversion gain A Q of the front-end readout circuit;

步骤2、测试前端读出集成电路的ENC斜率:Step 2. Test the ENC slope of the front-end readout integrated circuit:

通过FPGA编程控制,设置MOS管的控制信号D0~Dn,从全“0”到全“1”变化,测试每次变化时前端读出集成电路输出噪声的均方根值 Through FPGA programming control, set the control signal D 0 ~ D n of the MOS tube, change from all "0" to all "1", and test the root mean square value of the output noise of the integrated circuit read out by the front end at each change

计算不同电容条件下的等效噪声电荷值ENC(i)Calculate the equivalent noise charge value ENC(i) under different capacitance conditions

将测到的输入总电容Cx和ENG(i)值进行二维组合,即Ci与所测ENC(i)一一对应;Two-dimensional combination of the measured input total capacitance C x and ENG(i) values, that is, one-to-one correspondence between C i and the measured ENC(i);

采用线性拟合得到拟合直线,计算拟合后直线的斜率k,该斜率即为前端读出集成电路的ENC斜率,单位为 The fitted straight line is obtained by linear fitting, and the slope k of the fitted straight line is calculated. This slope is the ENC slope of the front-end readout integrated circuit, and the unit is

其中:in:

Ci为测试电路中N个电容中的第i个电容,Di为与第i个电容串联的开关MOS管的状态;C i is the i-th capacitor among the N capacitors in the test circuit, and D i is the state of the switch MOS tube connected in series with the i-th capacitor;

所述每次噪声电压稳定时的均方根值的测试方法:关掉信号发生器,使输入到前端读出集成电路的电荷为零,利用示波器测量前端读出集成电路的输出电压噪声,将示波器的采用时间窗口调至最大,记录噪声电压稳定时的均方根值 The test method of the root mean square value when the noise voltage is stable each time: turn off the signal generator, make the charge input to the front-end readout integrated circuit be zero, use an oscilloscope to measure the output voltage noise of the front-end readout integrated circuit, and Adjust the time window of the oscilloscope to the maximum, and record the root mean square value when the noise voltage is stable

步骤3、测量零电容条件下前端读出集成电路的ENC:Step 3. Measure the ENC of the front-end readout integrated circuit under the condition of zero capacitance:

挑断被测前端读出集成电路的邦定金线,使得前端读出集成电路输入端的总电容为零,测量出此时前端读出芯片的噪声均方根值计算出此时的前端读出集成Pick off the bonding gold wire of the front-end readout integrated circuit under test, so that the total capacitance at the input end of the front-end readout integrated circuit is zero, and measure the noise root mean square value of the front-end readout chip at this time Calculate the front-end readout integration at this time

电路等效噪声电荷:Circuit equivalent noise charge:

步骤4、生成前端读出芯片的等效噪声电荷公式:Step 4. Generate the equivalent noise charge formula of the front-end readout chip:

将上面步骤求出的k和ENC0代入下述公式,得出前端读出芯片等效噪声电荷与探测器电容间的关系Substitute k and ENC 0 calculated in the above steps into the following formula to obtain the relationship between the equivalent noise charge of the front-end readout chip and the detector capacitance

ENC=ENC0+kCd ENC=ENC 0 +kC d

Cd为探测器寄生电容。C d is the detector parasitic capacitance.

有益效果Beneficial effect

本发明提出的一种前端读出集成电路的等效噪声电荷测试电路及测试方法,根据前端读出芯片的等效噪声电荷与探测器电容两者之间的关系,首先将前端读出芯片置于测量系统内,完成电气测试准备。其次,利用FPGA控制开关的状态实现不同的探测器电容值,并测量出不同电容下的等效噪声电荷值,通过线性拟合计算出等效噪声斜率。再次,将输入端邦定线挑断,计算出零输入电容条件下的等效噪声电荷值。最后,提出测试得到的前端读出集成电路等效噪声电荷公式。该方法能够实现前端读出集成电路等效噪声电荷参数的全自动测试,适合于大批量前端读出集成电路芯片测试,效率高,成本低,对于前端读出集成电路的性能评价具有科学的指导意义。The equivalent noise charge test circuit and test method of a front-end readout integrated circuit proposed by the present invention, according to the relationship between the equivalent noise charge of the front-end readout chip and the detector capacitance, first set the front-end readout chip to In the measurement system, complete the electrical test preparation. Secondly, the state of the FPGA control switch is used to realize different detector capacitance values, and the equivalent noise charge values under different capacitances are measured, and the equivalent noise slope is calculated by linear fitting. Again, break the bonding wire at the input end and calculate the equivalent noise charge value under the condition of zero input capacitance. Finally, the equivalent noise charge formula of the front-end readout integrated circuit obtained from the test is proposed. This method can realize the fully automatic test of the equivalent noise charge parameters of the front-end readout integrated circuit, is suitable for the test of large-scale front-end readout integrated circuit chips, has high efficiency and low cost, and has scientific guidance for the performance evaluation of the front-end readout integrated circuit significance.

用本发明方法可以在FPGA的控制下,自动改变前端读出芯片输入端电容的大小,自动测量得到多组等效噪声电荷数据,通过拟合直线可以得出噪声斜率,最终给出不同探测器电容与等效噪声电荷间的关系。本发明提出的测量方法,效率更高、误差更小,更接近于仿真结果。With the method of the present invention, under the control of the FPGA, the size of the input capacitance of the front-end readout chip can be automatically changed, multiple sets of equivalent noise charge data can be obtained by automatic measurement, the noise slope can be obtained by fitting a straight line, and finally different detectors can be obtained. The relationship between capacitance and equivalent noise charge. The measurement method proposed by the invention has higher efficiency, smaller error and is closer to the simulation result.

附图说明Description of drawings

图1模拟前端读出集成电路简化原理图;Fig. 1 simplified schematic diagram of analog front-end readout integrated circuit;

图2文献[2]采用的ENC测量系统;Figure 2 ENC measurement system used in literature [2];

图3本发明提出的ENC测量系统;The ENC measurement system proposed by the present invention in Fig. 3;

图4前端读出芯片探测器电容与等效噪声电荷间的关系。Figure 4 The relationship between the front-end readout chip detector capacitance and the equivalent noise charge.

具体实施方式Detailed ways

现结合实施例、附图对本发明作进一步描述:Now in conjunction with embodiment, accompanying drawing, the present invention will be further described:

(1)测量系统(1) Measurement system

本发明提出的测量系统如图3所示。该测量系统分别由被测芯片、电源及偏置电流产生电路、FPGA芯片、耦合电容、开关电容网络、晶振、驱动放大器等组成。与文献[2]测试系统的不同之处在于,采用贴片电容器代替直插式电容器,将多个不同电容值的贴片电容器一次性焊接在测试板上,每个电容器使用串联开关进行控制,开关采用MOS管实现。当开关闭合时,电容器接入至电荷灵敏放大器输入端;当开关断开时,电容器与电荷灵敏放大器输入端断开,接入电容值为零。通过FPGA编程生成控制MOS管M0~Mn的控制信号D0~Dn,得到不同电容值组合。用于测试的输入电荷量由阶跃电压信号通过一个交流耦合的串行电容产生。其中,阶跃电压信号由信号发生器产生。前端读出集成电路输出电压通过一个驱动缓冲器接入到示波器中进行测量。The measurement system proposed by the present invention is shown in FIG. 3 . The measurement system is composed of the chip under test, power supply and bias current generation circuit, FPGA chip, coupling capacitor, switched capacitor network, crystal oscillator, drive amplifier and so on. The difference from the test system in literature [2] is that chip capacitors are used instead of in-line capacitors, multiple chip capacitors with different capacitance values are welded on the test board at one time, and each capacitor is controlled by a series switch. The switch is realized by MOS tube. When the switch is closed, the capacitor is connected to the input terminal of the charge sensitive amplifier; when the switch is opened, the capacitor is disconnected from the input terminal of the charge sensitive amplifier, and the connected capacitance value is zero. The control signals D 0 -D n for controlling the MOS transistors M 0 -M n are generated through FPGA programming to obtain combinations of different capacitance values. The input charge used for the test is generated by a step voltage signal through an AC-coupled series capacitor. Among them, the step voltage signal is generated by the signal generator. The front-end readout integrated circuit output voltage is connected to the oscilloscope through a drive buffer for measurement.

具体电路连接:信号发生器串接耦合电容CT,与被测芯片之间并联N个电容与 MOS管的串联电路,每个MOS管的G极与FPGA芯片的I/O端口连接;晶振的信号输出端与FPGA芯片的时钟端口连接;FPGA芯片的电源端口与电源及偏置电流连接。所述N个电容的容值不同,选择N个电容的容值遵循下述原则:Specific circuit connection: the signal generator is connected in series with the coupling capacitor C T , and the series circuit of N capacitors and MOS tubes is connected in parallel with the chip under test, and the G pole of each MOS tube is connected to the I/O port of the FPGA chip; the crystal oscillator The signal output end is connected with the clock port of the FPGA chip; the power port of the FPGA chip is connected with the power supply and the bias current. The capacitance values of the N capacitors are different, and the capacitance values of the N capacitors are selected according to the following principles:

其中,Cd为探测器寄生电容。Among them, C d is the parasitic capacitance of the detector.

(2)测试步骤(2) Test steps

第一步:测试前端读出集成电路的电荷转换增益Step 1: Test the charge conversion gain of the front-end readout IC

测试前端读出集成电路的电荷转换增益:将被测前端读出集成电路的输入端口与测试电路的耦合电容CT输出端连接,被测前端读出集成电路的电源端口与测试电路的电源及偏置电流产生电路的输出端口连接;被测前端读出集成电路的读出通道的输出端口与示波器连接;Test the charge conversion gain of the front-end readout integrated circuit: connect the input port of the tested front-end readout integrated circuit with the coupling capacitance C T output end of the test circuit, and connect the power port of the tested front-end readout integrated circuit with the power supply and the test circuit The output port of the bias current generation circuit is connected; the output port of the readout channel of the readout integrated circuit of the front end under test is connected with the oscilloscope;

将前端读出集成电路连接至测量系统内,设置好信号发生器中电压脉冲的大小ΔVin,记录此时的耦合电容Cc的大小,那么此时前端读出集成电路的输入电荷量QinConnect the front-end readout integrated circuit to the measurement system, set the size of the voltage pulse ΔV in in the signal generator, and record the size of the coupling capacitance C c at this time, then the input charge Q in of the front-end readout integrated circuit at this time for

利用示波器测量得到前端读出集成电路的输出电压交流值vout,通过公式(6)计算得到前端读出电路的电荷转换增益。The AC value v out of the output voltage of the front-end readout integrated circuit is measured by an oscilloscope, and the charge conversion gain of the front-end readout circuit is calculated by formula (6).

第二步:测试前端读出集成电路的ENC斜率Step 2: Test the ENC slope of the front-end readout IC

采用精确的分立电容组合来模拟探测器寄生电容,通过FPGA控制各个开关MOS 管的状态来实现不同的电容值,假设接入的总电容值为Cx,则Cx等于Precise discrete capacitor combination is used to simulate the parasitic capacitance of the detector, and the state of each switch MOS tube is controlled by FPGA to achieve different capacitance values. Assuming that the total capacitance value connected is C x , then C x is equal to

其中,第i个开关MOS管导通时,Di为1;断开时,Di为0。各个分立电容的值可以根据实际探测器电容大小自行选择,并满足以下条件Wherein, when the i-th switch MOS transistor is turned on, D i is 1; when it is turned off, D i is 0. The value of each discrete capacitor can be selected according to the actual detector capacitance and meet the following conditions

通过FPGA编程控制,设置控制信号D0~Dn,从全“0”到全“1”变化,测试前端读出集成电路输出噪声的均方根值。其测试方法如下:关掉信号发生器,使输入到前端读出集成电路的电荷为零,利用示波器测量前端读出集成电路的输出电压噪声,将示波器的采用时间窗口调至最大,保证进入窗口的噪声电压样本足够多,记录每次噪声电压稳定时的均方根值利用公式(1)计算得到不同电容条件下的等效噪声电荷值ENC(i)。将测到的输入总电容和ENC值进行组合,采用线性拟合得到拟合直线,计算拟合后直线的斜率k,该斜率即为前端读出集成电路的ENC斜率,单位为 Through the FPGA programming control, set the control signal D 0 ~ D n , change from all "0" to all "1", and the test front-end reads the root mean square value of the output noise of the integrated circuit. The test method is as follows: turn off the signal generator, make the charge input to the front-end readout integrated circuit be zero, use the oscilloscope to measure the output voltage noise of the front-end readout integrated circuit, and adjust the oscilloscope’s adoption time window to the maximum to ensure that the input into the window There are enough noise voltage samples, and the root mean square value is recorded each time the noise voltage is stable Use formula (1) to calculate the equivalent noise charge value ENC(i) under different capacitance conditions. Combine the measured input total capacitance and ENC value, use linear fitting to get a fitted straight line, and calculate the slope k of the fitted straight line, which is the ENC slope of the front-end readout integrated circuit, and the unit is

第三步:测量零电容条件下前端读出集成电路的ENCStep 3: Measure the ENC of the front-end readout IC under zero-capacitance conditions

挑断前端读出集成电路的邦定金线,使得前端读出集成电路输入端的总电容为零,测量出此时前端读出芯片的噪声均方根值利用通过公式(1)计算出此时的前端读出集成电路等效噪声电荷ENC0Pick off the bonding gold wire of the front-end readout integrated circuit, so that the total capacitance of the input end of the front-end readout integrated circuit is zero, and measure the root mean square value of the noise of the front-end readout chip at this time The equivalent noise charge ENC 0 of the front-end readout integrated circuit at this time is calculated by formula (1).

第四步:提出前端读出芯片的等效噪声电荷公式Step 4: Propose the equivalent noise charge formula of the front-end readout chip

将上面步骤求出的k和ENC0代入公式(4),即可得出前端读出芯片等效噪声电荷与探测器电容间的关系,通过画图可以得出二者间的具体关系图。Substituting k and ENC 0 calculated in the above steps into formula (4), the relationship between the equivalent noise charge of the front-end readout chip and the detector capacitance can be obtained, and the specific relationship between the two can be obtained by drawing a graph.

具体实施方式:Detailed ways:

测试设备:LeCroy示波器,安捷伦81160A信号发生器,安捷伦电源,示波器,万用表,西门子BW34Si-PIN探测器,前端读出ASIC芯片(SENSROC12),0805封装的贴片电容,SOT-23封装的N型MOSFET晶体管。Test equipment: LeCroy oscilloscope, Agilent 81160A signal generator, Agilent power supply, oscilloscope, multimeter, Siemens BW34Si-PIN detector, front-end readout ASIC chip (SENSROC12), chip capacitor in 0805 package, N-type MOSFET in SOT-23 package transistor.

前端读出集成电路的等效噪声电荷测试电路:The equivalent noise charge test circuit of the front-end readout integrated circuit:

第一步:将前端读出芯片放置于测量系统内,设置信号发生器的电压脉冲为10mV,取耦合电容为1pF,通过公式(3)计算的出此时的输入电荷量为62500e-,探测器电容取1pF,输出波形峰值为576mV,噪声均方根值为1.22mV,通过公式(4) 计算出等效噪声电荷为132.3e-。Step 1: Place the front-end readout chip in the measurement system, set the voltage pulse of the signal generator to 10mV, take the coupling capacitance as 1pF, and calculate the input charge at this time as 62500e- through formula (3), detect If the capacitance of the capacitor is 1pF, the peak value of the output waveform is 576mV, and the root mean square value of the noise is 1.22mV. The equivalent noise charge calculated by the formula (4) is 132.3e-.

第二步:选择C1、C2、C3、C4和C5分别焊接上电容值为1pF、2pF、4pF、10pF 和20pF的电容,FPGA控制Di使探测器电容Cd分别为1pF、3pF、5pF、10pF和20pF,重复第一步分别计算出ENC为132.3e-、164.9e-、193.1e-、278e-和436.1e-,通过拟合出来的直线得到等效噪声电荷斜率为15.9e-/pF。Step 2: Select C1, C2, C3, C4, and C5 to weld capacitors with capacitance values of 1pF, 2pF, 4pF, 10pF, and 20pF respectively, and FPGA controls D i so that the detector capacitance C d is 1pF, 3pF, 5pF, 10pF and 20pF, repeat the first step to calculate the ENC as 132.3e-, 164.9e-, 193.1e-, 278e- and 436.1e- respectively, and the equivalent noise charge slope is 15.9e-/pF obtained by fitting the straight line .

第三步:挑断前端读出芯片的邦定金线,测得此时的噪声均方根值为1.1mV,输入电荷量为62500e-,输出波形峰值为576mV,此时的等效噪声电荷ENC0为119e-。Step 3: Cut off the bonded gold wire of the front-end readout chip. The measured RMS value of the noise at this time is 1.1mV, the input charge is 62500e-, and the peak value of the output waveform is 576mV. The equivalent noise charge ENC at this time 0 is 119e-.

第四步:该前端读出芯片的等效噪声电荷为:119e-+15.9e-/pF,重复测试三块不同的芯片,做出的等效噪声电荷与探测器电容间的关系图如图4所示,从图中可以看出,相比于文献[2]来说,误差更小,更接近于仿真结果。Step 4: The equivalent noise charge of the front-end readout chip is: 119e-+15.9e-/pF, repeated tests on three different chips, and the relationship between the equivalent noise charge and the detector capacitance is shown in the figure 4, it can be seen from the figure that compared with literature [2], the error is smaller and closer to the simulation results.

用本发明方法可以在FPGA的控制下,自动改变探测器电容的大小,得到多组数据,计算出所对应的前端读出芯片等效噪声电荷值,通过拟合直线可以得出噪声斜率,最终给出不同探测器电容与等效噪声电荷间的关系。相比于两值拟合噪声斜率来说,误差更小,更接近于仿真结果。该方法也适合于大批量前端读出集成电路芯片测试,效率高,成本低,对于前端读出集成电路的性能评价具有科学的指导意义。Under the control of the FPGA, the method of the present invention can automatically change the size of the detector capacitance, obtain multiple sets of data, calculate the equivalent noise charge value of the corresponding front-end readout chip, and obtain the noise slope by fitting a straight line, and finally give The relationship between different detector capacitances and equivalent noise charges is shown. Compared with the two-value fitting noise slope, the error is smaller and closer to the simulation result. The method is also suitable for testing large quantities of front-end readout integrated circuit chips, has high efficiency and low cost, and has scientific guiding significance for performance evaluation of front-end readout integrated circuits.

Claims (2)

1.一种前端读出集成电路的等效噪声电荷测试电路,包括电源及偏置电流产生电路、信号发生器和耦合电容;其特征在于还包括FPGA芯片、晶振、N个电容以及与电容串联的MOS管;信号发生器串接耦合电容CT,与被测芯片之间并联N个电容与MOS管的串联电路,每个MOS管的G极与FPGA芯片的I/O端口连接;晶振的信号输出端与FPGA芯片的时钟端口连接;FPGA芯片的电源端口与电源及偏置电流连接。所述N个电容的容值不同,选择N个电容的容值遵循下述原则:1. The equivalent noise charge test circuit of a kind of front end readout integrated circuit, comprises power supply and bias current generation circuit, signal generator and coupling capacitance; It is characterized in that also comprising FPGA chip, crystal oscillator, N electric capacity and with electric capacity series connection MOS tube; the signal generator is connected in series with the coupling capacitor C T , and a series circuit of N capacitors and MOS tubes is connected in parallel with the chip under test, and the G pole of each MOS tube is connected to the I/O port of the FPGA chip; the crystal oscillator The signal output end is connected with the clock port of the FPGA chip; the power port of the FPGA chip is connected with the power supply and the bias current. The capacitance values of the N capacitors are different, and the capacitance values of the N capacitors are selected according to the following principles: 其中,Cd为探测器寄生电容。Among them, C d is the parasitic capacitance of the detector. 2.一种利用权利要求1所述前端读出集成电路的等效噪声电荷测试电路测试芯片的等效噪声电荷的方法,其特征在于步骤如下:2. a method utilizing the equivalent noise charge test chip of the equivalent noise charge test circuit test chip of the front end readout integrated circuit according to claim 1, is characterized in that the steps are as follows: 步骤1、测试前端读出集成电路的电荷转换增益:将被测前端读出集成电路的输入端口与测试电路的耦合电容CT输出端连接,被测前端读出集成电路的电源端口与测试电路的电源及偏置电流产生电路的输出端口连接;被测前端读出集成电路的读出通道的输出端口与示波器连接;Step 1, test the charge conversion gain of the front-end readout integrated circuit: connect the input port of the tested front-end readout integrated circuit with the coupling capacitor CT output end of the test circuit, and connect the power port of the tested front-end readout integrated circuit with the test circuit The power supply and the output port of the bias current generating circuit are connected; the output port of the readout channel of the readout integrated circuit of the front end under test is connected with the oscilloscope; 设置好信号发生器中电压脉冲的大小ΔVin,记录此时的耦合电容Cc的大小,那么此时前端读出集成电路的输入电荷量QinSet the size of the voltage pulse ΔV in in the signal generator, record the size of the coupling capacitance C c at this time, then the input charge Q in of the front-end readout integrated circuit at this time is 利用示波器测量得到前端读出集成电路的输出电压交流值vout,通过下式Use the oscilloscope to measure the output voltage AC value v out of the front-end readout integrated circuit, through the following formula 得到前端读出电路的电荷转换增益AQObtain the charge conversion gain A Q of the front-end readout circuit; 步骤2、测试前端读出集成电路的ENC斜率:Step 2. Test the ENC slope of the front-end readout integrated circuit: 通过FPGA编程控制,设置MOS管的控制信号D0~Dn,从全“0”到全“1”变化,测试每次变化时前端读出集成电路输出噪声的均方根值 Through FPGA programming control, set the control signal D 0 ~ D n of the MOS tube, change from all "0" to all "1", and test the root mean square value of the output noise of the integrated circuit read out by the front end at each change 计算不同电容条件下的等效噪声电荷值ENC(i)Calculate the equivalent noise charge value ENC(i) under different capacitance conditions 将测到的输入总电容Cx和ENC(i)值进行二维组合,即Ci与所测ENC(i)一一对应;Two-dimensional combination of the measured input total capacitance C x and ENC(i) values, that is, one-to-one correspondence between C i and the measured ENC(i); 采用线性拟合得到拟合直线,计算拟合后直线的斜率k,该斜率即为前端读出集成电路的ENC斜率,单位为 The fitted straight line is obtained by linear fitting, and the slope k of the fitted straight line is calculated. This slope is the ENC slope of the front-end readout integrated circuit, and the unit is 其中:in: Ci为测试电路中N个电容中的第i个电容,Di为与第i个电容串联的开关MOS管的状态;C i is the i-th capacitor among the N capacitors in the test circuit, and D i is the state of the switch MOS tube connected in series with the i-th capacitor; 所述每次噪声电压稳定时的均方根值的测试方法:关掉信号发生器,使输入到前端读出集成电路的电荷为零,利用示波器测量前端读出集成电路的输出电压噪声,将示波器的采用时间窗口调至最大,记录噪声电压稳定时的均方根值 The test method of the root mean square value when the noise voltage is stable each time: turn off the signal generator, make the charge input to the front-end readout integrated circuit be zero, use an oscilloscope to measure the output voltage noise of the front-end readout integrated circuit, and Adjust the time window of the oscilloscope to the maximum, and record the root mean square value when the noise voltage is stable 步骤3、测量零电容条件下前端读出集成电路的ENC:Step 3. Measure the ENC of the front-end readout integrated circuit under the condition of zero capacitance: 挑断被测前端读出集成电路的邦定金线,使得前端读出集成电路输入端的总电容为零,测量出此时前端读出芯片的噪声均方根值计算出此时的前端读出集成电路等效噪声电荷:Pick off the bonding gold wire of the front-end readout integrated circuit under test, so that the total capacitance at the input end of the front-end readout integrated circuit is zero, and measure the noise root mean square value of the front-end readout chip at this time Calculate the equivalent noise charge of the front-end readout integrated circuit at this time: 步骤4、生成前端读出芯片的等效噪声电荷公式:Step 4. Generate the equivalent noise charge formula of the front-end readout chip: 将上面步骤求出的k和ENC0代入下述公式,得出前端读出芯片等效噪声电荷与探测器电容间的关系Substitute k and ENC 0 calculated in the above steps into the following formula to obtain the relationship between the equivalent noise charge of the front-end readout chip and the detector capacitance ENC=ENC0+kCd ENC=ENC 0 +kC d Cd为探测器寄生电容。C d is the detector parasitic capacitance.
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