CN110182811A - A kind of reduction furnace auxiliary imaging system and autocontrol method - Google Patents
A kind of reduction furnace auxiliary imaging system and autocontrol method Download PDFInfo
- Publication number
- CN110182811A CN110182811A CN201910504843.8A CN201910504843A CN110182811A CN 110182811 A CN110182811 A CN 110182811A CN 201910504843 A CN201910504843 A CN 201910504843A CN 110182811 A CN110182811 A CN 110182811A
- Authority
- CN
- China
- Prior art keywords
- silicon rod
- image
- reduction furnace
- real
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000009467 reduction Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000003384 imaging method Methods 0.000 title claims abstract description 19
- 238000012544 monitoring process Methods 0.000 claims abstract description 32
- 239000000523 sample Substances 0.000 claims abstract description 20
- 238000003860 storage Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 161
- 229910052710 silicon Inorganic materials 0.000 claims description 155
- 239000010703 silicon Substances 0.000 claims description 155
- 238000005259 measurement Methods 0.000 claims description 56
- 238000012545 processing Methods 0.000 claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 229920005591 polysilicon Polymers 0.000 claims description 21
- 238000009529 body temperature measurement Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 7
- 238000003708 edge detection Methods 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 6
- 239000005052 trichlorosilane Substances 0.000 claims description 6
- 241000208340 Araliaceae Species 0.000 claims description 3
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 3
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 3
- 235000008434 ginseng Nutrition 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 238000007781 pre-processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 206010047571 Visual impairment Diseases 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001931 thermography Methods 0.000 description 3
- 238000004861 thermometry Methods 0.000 description 3
- 241001269238 Data Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004737 colorimetric analysis Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0044—Furnaces, ovens, kilns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a kind of reduction furnace auxiliary imaging system and autocontrol method, described includes infrared monitoring probe and analog-digital converter chip；The infrared monitoring probe includes CCD camera, infrared monitoring probe is fixed at reduction furnace visor, after light at reduction furnace visor passes through the lens focus of CCD camera into image, the light of image will be changed into charge parameter by CCD camera, digital signal is converted by analog-digital converter chip again, digital picture is converted to through overcompression storage, system handles digital picture, obtains control parameter.
Description
Technical field
The present invention relates to a kind of reduction furnace auxiliary imaging system and autocontrol methods.
Background technique
Flow field, temperature field equal distribution form in reduction furnace determine that reduction furnace uniquely can be changed is at design initial stage substantially
Nozzle quantity and distribution can carry out the adjusting in flow field, temperature field by blocking, changing the means such as nozzle diameter and height, but
The specification and quantity for being nozzle can not be changed within a blow-on period once confirming.The growth of polysilicon is dynamic process,
Electric current, flow, material proportion, silicon rod diameter are changing always in reduction furnace operational process, and the specification and quantity of nozzle can only expire
The requirement of certain time period in the sufficient cycle of operation needs the technological parameter for overall process to carry out automatically tracking adjusting；Reduction
The existing control method of furnace is that material is separately controlled with electric current, and temperature is the point thermometric by passing through observation window, is fanned out from point to area, and diameter
Measurement estimated completely by the working experience of worker, and adjust electric current by infrared radiation thermometer monitoring data and increase and decrease is mixed
Gas air inflow is closed, subjective factor, accidentalia are very high, are not able to satisfy electric current and charging and proportion during entire production run
Adjustment in real time.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of reduction furnace auxiliary imaging systems, including infrared monitoring to visit
Head, image processing module and analog-digital converter chip；
The infrared monitoring probe includes CCD camera, and infrared monitoring probe is fixed at reduction furnace visor, when reduction furnace regards
The light of Jing Chu by the lens focus of CCD camera at image after, the light of image will be changed into charge parameter by CCD camera,
Digital signal is converted by analog-digital converter chip again, is deposited through overcompression (such as half that image size boil down to is original)
Storage is converted to digital picture, and image processing module handles digital picture, calculates and obtains control parameter.
Described image processing module handles digital picture, calculates and obtains control parameter, specifically comprises the following steps:
Step a1, the digital picture are silicon rod pitch image, and silicon rod radial growth speed V and silicon rod are calculated first
Diameter D:
ST1=CT1×PT1,
DT1=ST1-S0+D0,
V=(ST2-ST1)/(T2-T1),
In formula, ST1For T1Moment calculates resulting silicon rod distance values, CT1For T1Moment silicon rod pitch image pixel value and silicon
Stick spacing actual pixels ratio (silicon rod spacing actual pixels by directly shot outside reduction furnace silicon rod pitch image obtain,
Reduction furnace silicon rod spacing is fixed in reduction furnace Design and manufacturing process, that is the distance between silicon rod and silicon rod are fixed
, for example the silicon rod spacing of all types of reduction furnaces is essentially 250 millimeters at present, the silicon core of selection is substantially 15*15, is existed in this way
The initial value of initial operating stage CCD measurement is exactly two silicon rod maximum spacing, and as time goes by, silicon rod is more and more thicker, and two
Spacing can gradually reduce between stick, the pixel value of silicon rod and the spatial pixel values without being obtained measured by silicon rod be it is different,
Thus obtain practical silicon rod diameter), PT1For T1Moment silicon rod pitch image pixel value；S0For silicon rod spacing initial measurement
Value；D0For silicon rod initial diameter, i.e. silicon core diameter；DT1For T1Moment calculates resulting silicon rod diameter；ST2For T2Moment calculates institute
The silicon rod distance values obtained, T2、T1The time detected for adjacent 2 times, general T2、T1Interval 5~10 seconds；
Step a2 is calculated and is obtained T1 moment instantaneous power consumption P and instantaneous feed stock conversion α:
P=UI/75.4 ρ DT1VL,
In formula, U T1Moment silicon rod total voltage, I T1Moment silicon rod total current, ρ are polysilicon density, and L is that silicon rod is long
Degree, Q are material trichlorosilane flow.
In the calculating process of step a1 and step a2, the diameter of setting silicon rod growth is consistent (silicon rod in reduction furnace
Height close to 3 meters, be inhomogenous in practical growth course, thus cause finished product silicon rod up and down stick it is different through difference, and
And each heat is different from, so in imaging measurement in order to which value is convenient, it is assumed that upper and lower stick diameter is consistent).
System further includes data acquisition module and optimal control module；
Described image processing module further includes vision measurement module and color comparison temperature measurement module.
System obtains other control parameters by executing following steps:
Step b1, the growth signals of polysilicon in reduction furnace are obtained by data acquisition module, and growth signals pass through modulus
After the analog-to-digital conversion of converter chip, the infrared image of silicon rod is obtained；
Step b2, infrared image is input in image processing module, by image denoising, smothing filtering, edge detection
After processing, obtaining picture edge characteristic information (can refer to: http://image-net.org/index), and be sent into vision survey
Measure module；
Step b3, the vision measurement module demarcate the intrinsic parameter of CCD camera, outer parameter, believe in edge feature
On the basis of breath, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, silicon is obtained
The real-time diameter data (silicon rod diameter D is calculated by the formula of step a1) of stick；
Step b4, the color comparison temperature measurement module obtain real-time temperature curve (the color comparison temperature measurement module benefit in reduction furnace
With the ratio thermometric of radiation intensity in two adjacent narrow wave bands.Colorimetric method thermometric uses wavelength narrow band comparison techniques, according to dimension
Grace deviates law, and the direction that the maximum monochromatic radioactive intensity of absolute black body reduces to wavelength when temperature increases is mobile, makes two
The brightness ratio of fixed wave length varies with temperature, therefore measures its brightness ratio and know relevant temperature), choose the temperature of best heat
As index is compared, (best temperature profile has been chosen in having run heat to line of writing music, and the standard of selection is seen: this heat deposition
Whether speed is maximum, whether maximum judges for unit power consumption whether minimum, fine and close material ratio), real-time measurement is obtained real-time
The temperature curve of temperature curve and best heat is compared, and is adjusted correction (computer adjust automatically), obtains best temperature
Degree evidence, so that entirely the temperature of reduction deposition process is in optimum state；
Step b5, the others control parameter includes the real-time diameter data of silicon rod and surface temperature data, by acquisition
The real-time diameter data of silicon rod, surface temperature data, instantaneous power consumption and instantaneous feed stock conversion are transported to optimal control module, optimization
According to these control parameters sending optimal control instruction, (reduction furnace silicon rod deposition is intermittent duty to control module, and each furnace is raw
Length is all had any different, and four indices the upper surface of have been run by artificial screening, is selected optimal index as index is compared and is inputted
Computer is used as to mark parameter, and the real data that real time monitoring measurement obtains also inputs computer and is compared, and compares out
Difference, by the way that completion correction is adjusted to electric current, charging proportion, for example, can be improved or reduce next hour hydrogen
The amount of substance and the ratio between the amount of trichlorosilane substance, matching reduces every time or increases 0.1).
The present invention also provides a kind of reduction furnace autocontrol methods, include the following steps:
Step c1, infrared monitoring probe are fixed at reduction furnace visor, and the light at reduction furnace visor passes through CCD camera
After lens focus is at image, the light of image will be changed into charge parameter by CCD camera, then be turned by analog-digital converter chip
It changes digital signal into, is converted to digital picture through overcompression storage, system handles digital picture, calculates and obtains control ginseng
Number, control parameter includes instantaneous power consumption and instantaneous feed stock conversion；
Step c2 obtains other control parameters:
The growth signals of polysilicon in reduction furnace are obtained by data acquisition module, growth signals pass through analog-digital converter core
After the analog-to-digital conversion of piece, the infrared image of silicon rod is obtained；
Infrared image is input in image processing module, after image denoising, smothing filtering, edge detection process,
Picture edge characteristic information is obtained, and is sent into vision measurement module；
The vision measurement module demarcates the intrinsic parameter of CCD camera, outer parameter, on the basis of edge feature information
On, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, the real-time of silicon rod is obtained
Diameter data；
The color comparison temperature measurement module obtains real-time temperature curve in reduction furnace, chooses the temperature curve conduct of best heat
Index is compared, the temperature curve of real time temperature curve and best heat that real-time measurement obtains is compared, is adjusted and entangles
Partially, optimum temperature data are obtained；
The others control parameter includes the real-time diameter data of silicon rod and optimum temperature data,
Step c2, by the real-time diameter data of the silicon rod of acquisition, optimum temperature data, instantaneous power consumption and instantaneous feed stock conversion
It is transported to optimal control module, optimal control module issues optimal control according to these control parameters and instructs.
Optimal control module can give control instruction to infrared monitoring probe or mechanical actuating mechanism through I/0 oral instructions, complete
At the adjustment of parameter.
The utility model has the advantages that present invention employs infrared imagery technique, infrared temperature-test technology, using digital image processing techniques as hand
Section, to acquire the key parameters such as silicon rod surface temperature distribution, stick diameter, developing as support can be to silicon rod in reduction furnace
The key parameters such as temperature, diameter are monitored on-line, by the way that monitoring data and production technology are carried out big data analysis, screening,
To optimal control technique.
The present invention uses flow monitoring instrument and auto-control valve, and mass flow controller etc. automates flow regulator,
Accurate adjusting in proportion is carried out to the Internal and external cycle flow of reduction furnace, to meet growth course material requirement.
The present invention writes control program, realizes the automation control of reduction furnace production by increasing related hardware.Pass through sieve
Outstanding Con trolling index is selected, outstanding production target is reappeared, passes through temperature field and flow field and the correlation data of nozzle flow rate, drop
The every consumption of low reduction.Unified same type of furnace operation formula, reduces cost.It solves material (TPS system) and automatically controlled (PLC system)
Data transmission problems.
After the present invention is for producing, the randomness of operator's adjusting process parameter can be greatly decreased, reduce and patrolled in furnace
It returns and checks number, 20 or more reduction furnaces are about arranged in reduction plant, check situation in furnace and adjust complete
Portion completes to need the cycle time of half an hour, and staff labor intensity can be greatly reduced in this way, and amendment correction data are timely, subtract
Few exception furnace frequency, increases single furnace output and production line total amount.Very high economic benefit can be brought to production.Initial estimate ratio
High 10% yield of use premise is calculated according to 120,000 yuan of polysilicon per ton, according to 50,000 tons of calculating are produced per year, can bring direct effect
600,000,000 yuan of benefit.
Detailed description of the invention
The present invention is done with reference to the accompanying drawings and detailed description and is further illustrated, it is of the invention above-mentioned or
Otherwise advantage will become apparent.
Fig. 1 is infrared imaging schematic illustration.
Fig. 2 is infrared thermoviewer.
Fig. 3 is double color infrared temperature measuring instrument schematic illustration.
Fig. 4 is double color infrared temperature measuring instrument.
Fig. 5 is reduction furnace silicon rod apparatus for detecting diameter.
Fig. 6 a is silicon rod diameter measurement growth schematic diagram early period.
Fig. 6 b is silicon rod diameter measurement Later growth schematic diagram.
Fig. 7 is system IR imaging schematic diagram.
Fig. 8 is working-flow figure.
Fig. 9 is silicon rod measurement position.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and embodiments.
A, automatic imaging system in reduction furnace
The technical principle of infrared thermal imaging: infrared thermal imaging is specific with the infrared ray of photoelectric technology detection object heat radiation
Band signal converts the signal into the image and figure differentiated for human vision, and by Preprocessing Technique, analysis is not
The gray scale of infrared image under co-wavelength to determine the temperature of object under test, and can further calculate out temperature value.Infrared heat
Imaging technique makes one to have surmounted dysopia, and thus people " can see " temperature distribution state of body surface.Briefly
It is object reflection infrared ray, is converted to temperature field after signal processing.(see Fig. 1 and Fig. 2, Fig. 2 be model MCS640 it is infrared at
As instrument.)
B, infrared temperature-test technology
Infrared radiation thermometer measures the temperature of a point, judges that detectable distance and detectable target are big with distance coefficient ratio
Small, what infrared thermometer measured is the mean temperature in a border circular areas.Thermal infrared imager is then by infrared image element, field angle
It is determined with spatial resolution, thermal infrared imager can generate thermal-induced imagery in real time,What is measured is the Temperature Distribution in a face.
, can be with displays temperature using the thermal imaging system of external import, but temperature accuracy only has 1 percent, increases infrared
Temperature measurer carries out temperature adjustmemt to imager, not only the accurate temperature of available point, can also calculate amendment by imaging, obtain
To the temperature value in the domain of face.
Double-colored thermometric: under selected two infrared wavelengths and certain bandwidth, the ratio between their radiation energy is with temperature
Variation and change.Using the different monochromatic filters of two groups of smaller bandwidths, the radiation energy in two close wave bands is collected, it will
They are compared again after being converted to electric signal, and finally thus ratio determines the temperature of measured target, therefore it can disappear substantially
It is higher using Two-color Measure Thermometer sensitivity of thermometry except the inconvenience that target material emissivity is adjusted, and the true temperature deviation of target
Smaller, the influence of tested person distance and therebetween absorbent is also smaller, and using effect is relatively good within the scope of medium and high temperature.Such as Fig. 3 institute
Show it is double color infrared temperature measuring instrument schematic illustration.Fig. 4 is double color infrared temperature measuring instrument.
C, silicon rod diameter measurement and the monitoring of silicon rod consistency
Silicon rod diameter measurement:
In terms of the operation control of reduction furnace, most of at present is to give phase according to the different phase of silicon rod deposition growing
The flow and proportion of matched reaction raw materials trichlorosilane and hydrogen, and reach suitable silicon rod by adjusting silicon rod heating power
Surface temperature makes polysilicon gradually deposition growing.Due to lacking effective means to silicon rod diameter context of detection, so producing
In stage judgement, mostly use and referred in the method for sedimentation time or artificial eye observation, can with certain subjectivity with it is accidental
Property, which is difficult to reach, is accurately controlled effect.
Silicon rod diameter measurement can judge method by temperature boundary, be obtained by Digital Image Processing, thus it is comprehensive into
And comprehensive each operating parameter comprehensively studies growth course, provides reference frame for reduction furnace running optimizatin.
Existing measurement method application:
Method one: detection device is mainly made of high temperature resistant fixed-focus digital camera, industrial computer, and camera is fixed
Sequential image acquisition is carried out at reduction furnace visor, is handled by the image that industrial computer acquires camera, by adopting
The proportionate relationship of the pixel and reality that collect image can calculate the spacing for obtaining 2 silicon rods of right opposite, and then calculate other institutes
Data are needed, detection device is as shown in figure 5, in Fig. 5, and 1 indicates reduction furnace, and 3 indicate silicon rod, and 2 be observation panel, and 4 be camera, and 5 are
Computer；Fig. 6 a is silicon rod diameter measurement growth schematic diagram early period.Fig. 6 b is silicon rod diameter measurement Later growth schematic diagram.
According to the ratio of the pixel value of acquisition silicon rod pitch image and actual range, silicon rod distance s can be calculated, and then are obtained
To silicon rod radial growth speed y and silicon rod diameter d:
S=C × P
D=S-S0+D0
V=(ST2-ST1)/(T2-T1)
In formula, C is the ratio of silicon rod pitch image pixel value and actual pixels, and P is silicon rod pitch image pixel value, S0For
Silicon rod spacing initial detecting value, D0For silicon rod initial diameter (silicon core diameter), ST2、ST1Resulting silicon is calculated for adjacent 2 detections
Stick distance values, T2、T1The time detected for adjacent 2 times.
Further combined with control parameters such as heating power, mass flows, it can calculate and obtain instantaneous power consumption P and instantaneous raw material turn
Rate α.
P=UI/75.4 ρ DVL
In formula, U is silicon rod total voltage, and I is silicon rod total current, and ρ is polysilicon density, and L is silicon rod length, and Q is material three
Chlorine hydrogen silicon flow.
Feature:
Assuming that the diameter of silicon rod growth is consistent；
Distance (220~240mm) is connected by electrode, the edge of two silicon rods of image procossing calculates silicon rod by difference
Average diameter；
The scalloping degree of silicon rod be after processing it is average, be unable to get the silicon rods such as Different electrodes circle, different height
Growth differences；
Instantaneous silicon rod diameter and inventory, the relationship of instantaneous electric power can individually be handled.
Main device:
Infrared monitoring probe includes: CCD (charge coupled cell, Charge Coupled Device, CCD) camera.CCD
It is made of a large amount of photosensitive unit, wherein photosensitive unit is otherwise known as " pixel " or " picture point ", and different photosensitive units exists
Spatially it is independently distributed.After light passes through lens focus into image, the light of image will be changed into charge parameter by CCD, then
It is converted into digital signal by analog-digital converter chip, common digital picture has been reformed into through overcompression storage.)
Image procossing and vision measurement module include: data acquisition module and image processing module.
Method two: multi-parameter combined measurement calculates
Method And Principle is with method one, using cordless, by mirror mouth to polysilicon temp and stick diameter outside furnace body
Ground measures.Infrared radiating light is imaged on near-infrared planar array detector after optical imaging system, and computer is to receiving
Image information handled, the parametric datas such as temperature, diameter and the growth rate of polysilicon are obtained after being calculated analytically；Finally
According to parametric datas such as the temperature of acquisition, diameter and growth rates, in conjunction at that time reaction condition and operating condition establish optimum control mould
Type, for as the foundation for instructing technique adjustment in polysilicon growth process.
Main purpose:
According to the actual working conditions of polycrystalline silicon reducing furnace and application environment feature, the heat based on near-infrared area array sensor
Silicon rod growth course is imaged and shows by imaging device；
Based on Digital Image Processing and computer vision measurement principle, the real-time online prison of silicon rod diameter in reduction furnace is realized
It surveys；
Based on twocolor thermometry, thermometric；
Relational database is established, convenient for the query analysis to historical data；
Monitoring data output interface is designed, realizes the data communication with Optimal Control System.
Entire polycrystalline silicon reducing furnace many reference amounts on-line monitoring system mainly forms: near-infrared planar array detector, scene are explosion-proof
Electric box, industrial treatment computer, DATA REASONING and analysis software etc..
System is broadly divided into three parts:
(1) many reference amounts infrared monitoring probe includes: near-infrared optical system and imaging device.
(2) infrared image processing and vision measurement module include: data acquisition module and image processing module.
Image processing module includes: vision measurement module and color comparison temperature measurement module；
(3) optimal control module includes: data-interface and optimal control module.
Wherein, the near-infrared optical system that imaging device uses, near-infrared planar array detector real-time monitoring device is entire
The core component of measuring system, it is made of the part such as near-infrared planar array detector, High Temperature Optical camera lens, high temperature dwell sheath, main
Wanting function is exactly the infrared image for obtaining polysilicon in reduction furnace.Using the growth of double camera mode observation polysilicon, in this way
It can be to avoid because using one camera the shortcomings that closer distance cannot observe polysilicon completely.System IR as shown in Figure 7 at
As schematic diagram.
Workflow is as follows:
1) growth signals that polysilicon in reduction furnace is obtained using many reference amounts infrared monitoring probe, are carried out analog-to-digital conversion, obtained
Obtain the infrared image of silicon rod；
2) infrared image of above-mentioned acquisition is input in image processing module, is passing through image denoising, smothing filtering, side
After a series of processing such as edge detection, more complete clearly image information and edge feature information are obtained, and be sent into vision survey
Measure module；
3) in vision measurement module, the inside and outside parameter of infrared CCD camera is demarcated, extracts edge in step 2
On the basis of, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, silicon rod is obtained
Real-time diameter data.
4) it in color comparison temperature measurement module, completes grey scale curve and is fitted, temperature is demarcated, complete thermometric；
5) by the silicon rod diameter and surface temperature data of acquisition, optimal control module is transported to by data output interface,
For the different type of furnaces and operating condition, measurement data is analyzed, corresponding closed optimized control model is provided.
It is working-flow figure as shown in Figure 8.
Combined optimization:
Infrared thermal imagery acquisition unit (monitoring probe) acquires heat radiation images in reduction furnace, and the access of infrared digital video is placed in
Multimode fibre adapter in live electrical control cabinet, signal will be delivered in control room in a manner of optical transport, through fiber adapters
Computer picture information analysis and control system are sent into after device photoelectric conversion.Computer carries out the data image signal of input pre-
Processing automatically identifies silicon rod target, and according to diameter processing after a series of processing such as image preprocessing, Dynamic Recognition
Module and correcting algorithm complete silicon rod diameter measurement, and on the one hand give real-time display in monitor is incorporated to number to the data measured
According to library, on the other hand by network transmission to control system, by issuing control instruction after control system on-line optimization.
Computer long-distance control software can give control instruction to high temperature monitoring through I/0 oral instructions by interface manipulation and visit
Head or mechanical actuating mechanism, complete the adjustment of parameter.When needing data base querying history, only it need to input heat (batch) number and click " inquiry "
It can be obtained temperature change in this furnace growth course to record.
Feature:
The detection of silicon rod surface temperature measurement: obtaining the infrared image of polysilicon at different wavelengths using near-infrared imaging technology,
Two-color thermometry is relied on, is calculated by colorimetric, to determine the temperature on more silicon rod surfaces.
Silicon rod diameter measurement: obtaining the dual-view of polycrystalline silicon rod using double CCD from different perspectives, based on existing for dual-view
' parallax ', to obtain the three-dimensional coordinate information of polycrystalline silicon rod diameter.
Infrared images pre-processing: edge positioning.
Jointly control: only temperature feedback Current Voltage.
Disadvantage: monitoring point: bottom silicon rod homogeneity assumes and single-point monitoring；
Multi-parameter linkage control only has the relationship feedback of diameter, temperature and Current Voltage；
The precision problem of image preprocessing needs the accurate software of algorithm to cooperate infrared imagery technique and calculate silicon rod
Diameter and temperature, for example, the extraction algorithm at silicon rod edge, the temperature gray scale algorithm of thermometric, angle algorithm of imaging etc., thus
Improve the accuracy of optimal control；
It is silicon rod measurement position as shown in Figure 9.The improvement of measurement method and silicon rod property judgement unanimous between the higher and lower levels:
The above method one and method two, especially method two, if it is possible to which the image processing problem for solving infrared imaging disappears
Lens effect caused by except the gas oven cavity atmosphere disturbance because of technique growth course, solves the edge positioning of silicon rod, and image is accurate
Algorithm etc. can form the instant recording of stick diameter, temperature in conjunction with other high-precision hardware.But the practical of silicon rod grew
Cheng Zhong, inconsistent above and below stick diameter, the inconsistent phenomenon of Internal and external cycle is common, a certain silicon rod for being unable to single-measurement bottom obtains stick
The parameters such as diameter, temperature are to technological parameters such as electric current, voltage, flow, the molar ratios of the full furnace that links.It therefore is optimization measurement system
System needs to carry out imaging and thermometric in top cross-bar position.
The present invention provides a kind of reduction furnace auxiliary imaging systems, including infrared monitoring probe, image processing module and mould
Number converter chip；
The infrared monitoring probe includes CCD camera, and infrared monitoring probe is fixed at reduction furnace visor, when reduction furnace regards
The light of Jing Chu by the lens focus of CCD camera at image after, the light of image will be changed into charge parameter by CCD camera,
Digital signal is converted by analog-digital converter chip again, is deposited through overcompression (such as half that image size boil down to is original)
Storage is converted to digital picture, and image processing module handles digital picture, calculates and obtains control parameter.
Described image processing module handles digital picture, calculates and obtains control parameter, specifically comprises the following steps:
Step a1, the digital picture are silicon rod pitch image, and silicon rod radial growth speed V and silicon rod are calculated first
Diameter D:
ST1=CT1×PT1,
DT1=ST1-S0+D0,
V=(ST2-ST1)/(T2-T1),
In formula, ST1For T1Moment calculates resulting silicon rod distance values, CT1For T1Moment silicon rod pitch image pixel value and silicon
Stick spacing actual pixels ratio (silicon rod spacing actual pixels by directly shot outside reduction furnace silicon rod pitch image obtain,
Reduction furnace silicon rod spacing is fixed in reduction furnace Design and manufacturing process, that is the distance between silicon rod and silicon rod are fixed
, for example the silicon rod spacing of all types of reduction furnaces is essentially 250 millimeters at present, the silicon core of selection is substantially 15*15, is existed in this way
The initial value of initial operating stage CCD measurement is exactly two silicon rod maximum spacing, and as time goes by, silicon rod is more and more thicker, and two
Spacing can gradually reduce between stick, the pixel value of silicon rod and the spatial pixel values without being obtained measured by silicon rod be it is different,
Thus obtain practical silicon rod diameter), PT1For T1Moment silicon rod pitch image pixel value；S0For silicon rod spacing initial measurement
Value；D0For silicon rod initial diameter, i.e. silicon core diameter；DT1For T1Moment calculates resulting silicon rod diameter；ST2For T2Moment calculates institute
The silicon rod distance values obtained, T2、T1The time detected for adjacent 2 times, general T2、T1Interval 5~10 seconds；
Step a2 is calculated and is obtained T1 moment instantaneous power consumption P and instantaneous feed stock conversion α:
P=UI/75.4 ρ DT1VL,
In formula, U T1Moment silicon rod total voltage, I T1Moment silicon rod total current, ρ are polysilicon density, and L is that silicon rod is long
Degree, Q are material trichlorosilane flow.
In the calculating process of step a1 and step a2, the diameter of setting silicon rod growth is consistent (silicon rod in reduction furnace
Height close to 3 meters, be inhomogenous in practical growth course, thus cause finished product silicon rod up and down stick it is different through difference, and
And each heat is different from, so in imaging measurement in order to which value is convenient, it is assumed that upper and lower stick diameter is consistent).
System further includes data acquisition module and optimal control module；
Described image processing module further includes vision measurement module and color comparison temperature measurement module.
System obtains other control parameters by executing following steps:
Step b1, the growth signals of polysilicon in reduction furnace are obtained by data acquisition module, and growth signals pass through modulus
After the analog-to-digital conversion of converter chip, the infrared image of silicon rod is obtained；
Step b2, infrared image is input in image processing module, by image denoising, smothing filtering, edge detection
After processing, obtaining picture edge characteristic information (can refer to: http://image-net.org/index), and be sent into vision survey
Measure module；
Step b3, the vision measurement module demarcate the intrinsic parameter of CCD camera, outer parameter, believe in edge feature
On the basis of breath, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, silicon is obtained
The real-time diameter data (silicon rod diameter D is calculated by the formula of step a1) of stick；
Step b4, the color comparison temperature measurement module obtain real-time temperature curve (the color comparison temperature measurement module benefit in reduction furnace
With the ratio thermometric of radiation intensity in two adjacent narrow wave bands.Colorimetric method thermometric uses wavelength narrow band comparison techniques, according to dimension
Grace deviates law, and the direction that the maximum monochromatic radioactive intensity of absolute black body reduces to wavelength when temperature increases is mobile, makes two
The brightness ratio of fixed wave length varies with temperature, therefore measures its brightness ratio and know relevant temperature), choose the temperature of best heat
As index is compared, (best temperature profile has been chosen in having run heat to line of writing music, and the standard of selection is seen: this heat deposition
Whether speed is maximum, whether maximum judges for unit power consumption whether minimum, fine and close material ratio), real-time measurement is obtained real-time
The temperature curve of temperature curve and best heat is compared, and is adjusted correction (computer adjust automatically), obtains best temperature
Degree evidence, so that entirely the temperature of reduction deposition process is in optimum state；
Step b5, the others control parameter includes the real-time diameter data of silicon rod and surface temperature data, by acquisition
The real-time diameter data of silicon rod, surface temperature data, instantaneous power consumption and instantaneous feed stock conversion are transported to optimal control module, optimization
According to these control parameters sending optimal control instruction, (reduction furnace silicon rod deposition is intermittent duty to control module, and each furnace is raw
Length is all had any different, and four indices the upper surface of have been run by artificial screening, is selected optimal index as index is compared and is inputted
Computer is used as to mark parameter, and the real data that real time monitoring measurement obtains also inputs computer and is compared, and compares out
Difference, by the way that completion correction is adjusted to electric current, charging proportion, for example, can be improved or reduce next hour hydrogen
The amount of substance and the ratio between the amount of trichlorosilane substance, matching reduces every time or increases 0.1).
The present invention also provides a kind of reduction furnace autocontrol methods, include the following steps:
Step c1, infrared monitoring probe are fixed at reduction furnace visor, and the light at reduction furnace visor passes through CCD camera
After lens focus is at image, the light of image will be changed into charge parameter by CCD camera, then be turned by analog-digital converter chip
It changes digital signal into, is converted to digital picture through overcompression storage, system handles digital picture, calculates and obtains control ginseng
Number, control parameter includes instantaneous power consumption and instantaneous feed stock conversion；
Step c2 obtains other control parameters:
The growth signals of polysilicon in reduction furnace are obtained by data acquisition module, growth signals pass through analog-digital converter core
After the analog-to-digital conversion of piece, the infrared image of silicon rod is obtained；
Infrared image is input in image processing module, after image denoising, smothing filtering, edge detection process,
Picture edge characteristic information is obtained, and is sent into vision measurement module；
The vision measurement module demarcates the intrinsic parameter of CCD camera, outer parameter, on the basis of edge feature information
On, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, the real-time of silicon rod is obtained
Diameter data；
The color comparison temperature measurement module obtains real-time temperature curve in reduction furnace, chooses the temperature curve conduct of best heat
Index is compared, the temperature curve of real time temperature curve and best heat that real-time measurement obtains is compared, is adjusted and entangles
Partially, optimum temperature data are obtained；
The others control parameter includes the real-time diameter data of silicon rod and optimum temperature data,
Step c2, by the real-time diameter data of the silicon rod of acquisition, optimum temperature data, instantaneous power consumption and instantaneous feed stock conversion
It is transported to optimal control module, optimal control module issues optimal control according to these control parameters and instructs.
Optimal control module can give control instruction to infrared monitoring probe or mechanical actuating mechanism through I/0 oral instructions, complete
At the adjustment of parameter.
The present invention provides a kind of reduction furnace auxiliary imaging system and autocontrol methods, implement the technical solution
There are many method and approach, the above is only a preferred embodiment of the present invention, it is noted that for the common of the art
For technical staff, various improvements and modifications may be made without departing from the principle of the present invention, these are improved and profit
Decorations also should be regarded as protection scope of the present invention.The available prior art of each component part being not known in the present embodiment is subject to reality
It is existing.
Claims (7)
1. a kind of reduction furnace auxiliary imaging system, which is characterized in that turn including infrared monitoring probe, image processing module and modulus
Parallel operation chip；
The infrared monitoring probe includes CCD camera, and infrared monitoring probe is fixed at reduction furnace visor, at reduction furnace visor
Light by the lens focus of CCD camera at image after, the light of image will be changed into charge parameter by CCD camera, then be led to
It crosses analog-digital converter chip and is converted into digital signal, be converted to digital picture through overcompression storage, image processing module is to number
Image is handled, and is calculated and is obtained control parameter.
2. system according to claim 1, which is characterized in that described image processing module handles digital picture,
It calculates and obtains control parameter, specifically comprise the following steps:
Step a1, the digital picture are silicon rod pitch image, and silicon rod radial growth speed V is calculated first and silicon rod is straight
Diameter:
ST1=CT1×PT1,
DT1=ST1-S0+D0,
V=(ST2-ST1)/(T2-T1),
In formula, ST1For T1Moment calculates resulting silicon rod distance values, CT1For T1Between moment silicon rod pitch image pixel value and silicon rod
Ratio away from actual pixels, PT1For T1Moment silicon rod pitch image pixel value；S0For silicon rod spacing initial measurement；D0For silicon rod
Initial diameter, i.e. silicon core diameter；DT1For T1Moment calculates resulting silicon rod diameter；ST2For T2Moment calculates resulting silicon rod spacing
Value；
Step a2 is calculated and is obtained T1 moment instantaneous power consumption P and instantaneous feed stock conversion α:
P=UI/75.4 ρ DT1VL,
In formula, U T1Moment silicon rod total voltage, I T1Moment silicon rod total current, ρ are polysilicon density, and L is silicon rod length, and Q is
Material trichlorosilane flow.
3. system according to claim 2, which is characterized in that in the calculating process of step a1 and step a2, set silicon
The diameter of stick growth is consistent.
4. system according to claim 3, which is characterized in that system further includes data acquisition module and optimal control mould
Block；
Described image processing module further includes vision measurement module and color comparison temperature measurement module.
5. system according to claim 4, which is characterized in that system obtains other control ginsengs by executing following steps
Number:
Step b1, the growth signals of polysilicon in reduction furnace are obtained by data acquisition module, and growth signals pass through analog-to-digital conversion
After the analog-to-digital conversion of device chip, the infrared image of silicon rod is obtained；
Step b2, infrared image is input in image processing module, by image denoising, smothing filtering, edge detection process
Afterwards, picture edge characteristic information is obtained, and is sent into vision measurement module；
Step b3, the vision measurement module demarcates the intrinsic parameter of CCD camera, outer parameter, in edge feature information
On the basis of, the tracking at zonule edge is carried out, the pixel value of measurement and effective unit scale are converted, silicon rod is obtained
Real-time diameter data；
Step b4, the color comparison temperature measurement module obtain real-time temperature curve in reduction furnace, choose the temperature curve of best heat
As index is compared, the temperature curve of real time temperature curve and best heat that real-time measurement obtains is compared, is adjusted
Whole correction obtains optimum temperature data；
Step b5, the others control parameter includes the real-time diameter data of silicon rod and optimum temperature data, by the silicon rod of acquisition
Real-time diameter data, optimum temperature data, instantaneous power consumption and instantaneous feed stock conversion are transported to optimal control module, optimal control
Module issues optimal control instruction according to these control parameters.
6. a kind of reduction furnace autocontrol method, which comprises the steps of:
Step c1, infrared monitoring probe are fixed at reduction furnace visor, the camera lens that the light at reduction furnace visor passes through CCD camera
After being focused into image, the light of image will be changed into charge parameter by CCD camera, then is converted by analog-digital converter chip
Digital signal is converted to digital picture through overcompression storage, and system handles digital picture, calculates and obtains control parameter,
Control parameter includes instantaneous power consumption and instantaneous feed stock conversion；
Step c2 obtains other control parameters:
The growth signals of polysilicon in reduction furnace are obtained by data acquisition module, growth signals are by analog-digital converter chip
After analog-to-digital conversion, the infrared image of silicon rod is obtained；
Infrared image is input in image processing module, after image denoising, smothing filtering, edge detection process, is obtained
Picture edge characteristic information, and it is sent into vision measurement module；
The vision measurement module demarcates the intrinsic parameter of CCD camera, outer parameter, on the basis of edge feature information,
The tracking for carrying out zonule edge, the pixel value of measurement and effective unit scale are converted, and obtain the real-time straight of silicon rod
Diameter data；
The color comparison temperature measurement module obtains real-time temperature curve in reduction furnace, chooses the temperature curve of best heat as comparison
Index is compared the temperature curve of real time temperature curve and best heat that real-time measurement obtains, is adjusted correction, obtains
Obtain optimum temperature data；
The others control parameter includes the real-time diameter data of silicon rod and optimum temperature data,
Step c2 conveys the real-time diameter data of the silicon rod of acquisition, optimum temperature data, instantaneous power consumption and instantaneous feed stock conversion
To optimal control module, optimal control module issues optimal control according to these control parameters and instructs.
7. according to the method described in claim 6, it is characterized in that, optimal control module can send control instruction to machinery
Executing agency completes the adjustment of parameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910504843.8A CN110182811A (en) | 2019-06-12 | 2019-06-12 | A kind of reduction furnace auxiliary imaging system and autocontrol method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910504843.8A CN110182811A (en) | 2019-06-12 | 2019-06-12 | A kind of reduction furnace auxiliary imaging system and autocontrol method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110182811A true CN110182811A (en) | 2019-08-30 |
Family
ID=67721409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910504843.8A Pending CN110182811A (en) | 2019-06-12 | 2019-06-12 | A kind of reduction furnace auxiliary imaging system and autocontrol method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110182811A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111429508A (en) * | 2020-03-19 | 2020-07-17 | 亚洲硅业(青海)股份有限公司 | Silicon core furnace control system and method |
| CN111596636A (en) * | 2020-06-19 | 2020-08-28 | 亚洲硅业(青海)股份有限公司 | Polycrystalline silicon reduction furnace control method and device and electronic equipment |
| CN112251807A (en) * | 2020-10-21 | 2021-01-22 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation system and preparation method |
| CN114088210A (en) * | 2020-08-04 | 2022-02-25 | 宝山钢铁股份有限公司 | Method for measuring surface temperature distribution of coke oven carbonization chamber wall |
| CN115477304A (en) * | 2022-09-27 | 2022-12-16 | 新特能源股份有限公司 | Reduction furnace regulation and control method, device and related equipment |
| CN115557504A (en) * | 2022-11-08 | 2023-01-03 | 新特能源股份有限公司 | Efficient and intelligent rod-detaching cleaning method for reduction furnace |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226050A (en) * | 2008-01-08 | 2008-07-23 | 西安理工大学 | Double-camera Czochralski single crystal diameter measurement method based on digital signal processor |
| CN101597060A (en) * | 2009-06-27 | 2009-12-09 | 东方电气集团东方汽轮机有限公司 | Video monitoring device for polysilicon growth |
| CN102795627A (en) * | 2012-06-19 | 2012-11-28 | 合肥瑞石测控工程技术有限公司 | Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace |
| CN103814149A (en) * | 2011-07-13 | 2014-05-21 | Memc电子材料有限公司 | Methods and systems for monitoring and controlling silicon rod temperature |
| CN104535003A (en) * | 2014-11-29 | 2015-04-22 | 内蒙古神舟硅业有限责任公司 | Detection device and detection method for detecting the growth rate and diameter of polycrystalline silicon rod |
| CN106461580A (en) * | 2014-06-17 | 2017-02-22 | 信越化学工业株式会社 | Surface temperature calculation method and control method for polycrystalline silicon rod, method for production of polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon ingot |
| JP6114687B2 (en) * | 2013-12-02 | 2017-04-12 | 信越化学工業株式会社 | Method for measuring surface temperature of polycrystalline silicon rod and method for producing polycrystalline silicon |
| CN107473229A (en) * | 2017-08-22 | 2017-12-15 | 宜昌南玻硅材料有限公司 | A kind of full-automatic closed loop of reduction furnace in polycrystalline silicon production is fed and the control method of power supply |
| CN107555439A (en) * | 2016-06-30 | 2018-01-09 | 新特能源股份有限公司 | Polycrystalline silicon growth electric current autocontrol method and device |
-
2019
- 2019-06-12 CN CN201910504843.8A patent/CN110182811A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226050A (en) * | 2008-01-08 | 2008-07-23 | 西安理工大学 | Double-camera Czochralski single crystal diameter measurement method based on digital signal processor |
| CN101597060A (en) * | 2009-06-27 | 2009-12-09 | 东方电气集团东方汽轮机有限公司 | Video monitoring device for polysilicon growth |
| CN103814149A (en) * | 2011-07-13 | 2014-05-21 | Memc电子材料有限公司 | Methods and systems for monitoring and controlling silicon rod temperature |
| CN102795627A (en) * | 2012-06-19 | 2012-11-28 | 合肥瑞石测控工程技术有限公司 | Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace |
| JP6114687B2 (en) * | 2013-12-02 | 2017-04-12 | 信越化学工業株式会社 | Method for measuring surface temperature of polycrystalline silicon rod and method for producing polycrystalline silicon |
| CN106461580A (en) * | 2014-06-17 | 2017-02-22 | 信越化学工业株式会社 | Surface temperature calculation method and control method for polycrystalline silicon rod, method for production of polycrystalline silicon rod, polycrystalline silicon rod, and polycrystalline silicon ingot |
| CN104535003A (en) * | 2014-11-29 | 2015-04-22 | 内蒙古神舟硅业有限责任公司 | Detection device and detection method for detecting the growth rate and diameter of polycrystalline silicon rod |
| CN107555439A (en) * | 2016-06-30 | 2018-01-09 | 新特能源股份有限公司 | Polycrystalline silicon growth electric current autocontrol method and device |
| CN107473229A (en) * | 2017-08-22 | 2017-12-15 | 宜昌南玻硅材料有限公司 | A kind of full-automatic closed loop of reduction furnace in polycrystalline silicon production is fed and the control method of power supply |
Non-Patent Citations (2)
| Title |
|---|
| BATAVIN, V.V. ET AL: "Measurement of the thickness of thin polycrystalline silicon-silicon dioxide-single crystal silicon structures using infrared ellipsometry", 《SOVIET MICROELECTRONICS》 * |
| 刘祥: "多晶硅还原炉内硅棒直径在线监测系统的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111429508A (en) * | 2020-03-19 | 2020-07-17 | 亚洲硅业(青海)股份有限公司 | Silicon core furnace control system and method |
| CN111429508B (en) * | 2020-03-19 | 2021-08-31 | 亚洲硅业(青海)股份有限公司 | Silicon core furnace control system and method |
| CN111596636A (en) * | 2020-06-19 | 2020-08-28 | 亚洲硅业(青海)股份有限公司 | Polycrystalline silicon reduction furnace control method and device and electronic equipment |
| CN111596636B (en) * | 2020-06-19 | 2021-08-03 | 亚洲硅业(青海)股份有限公司 | Polycrystalline silicon reduction furnace control method and device and electronic equipment |
| CN114088210A (en) * | 2020-08-04 | 2022-02-25 | 宝山钢铁股份有限公司 | Method for measuring surface temperature distribution of coke oven carbonization chamber wall |
| CN114088210B (en) * | 2020-08-04 | 2024-05-14 | 宝山钢铁股份有限公司 | Method for measuring surface temperature distribution of oven wall of coke oven carbonization chamber |
| CN112251807A (en) * | 2020-10-21 | 2021-01-22 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation system and preparation method |
| CN112251807B (en) * | 2020-10-21 | 2022-08-30 | 亚洲硅业(青海)股份有限公司 | Silicon core preparation system and preparation method |
| CN115477304A (en) * | 2022-09-27 | 2022-12-16 | 新特能源股份有限公司 | Reduction furnace regulation and control method, device and related equipment |
| CN115477304B (en) * | 2022-09-27 | 2023-08-22 | 新特能源股份有限公司 | Reducing furnace regulation and control method and device and related equipment |
| CN115557504A (en) * | 2022-11-08 | 2023-01-03 | 新特能源股份有限公司 | Efficient and intelligent rod-detaching cleaning method for reduction furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110182811A (en) | A kind of reduction furnace auxiliary imaging system and autocontrol method | |
| CN100464167C (en) | Method and device for real-time correcting infrared measuring temperature | |
| US12163941B2 (en) | Method and device for monitoring comprehensive growth of potted lettuce | |
| CN101476939B (en) | Double-CCD temperature field measuring apparatus and method | |
| CN102538983B (en) | CCD (Charge Coupled Device) temperature measuring device | |
| CN105675549A (en) | Portable crop parameter measurement and growth vigor intelligent analysis device and method | |
| CN104198396B (en) | The method that polarization-hyperspectral technique diagnosis crop N P and K wanes | |
| CN107588854B (en) | High precision measuring temperature method based on built-in reference body | |
| CN103575405A (en) | Thermal imaging camera with graphical temperature plot | |
| CN101608997B (en) | Spatial two-dimensional spectral data acquisition device and acquisition method | |
| CN101275870A (en) | An objective evaluation method of infrared thermal imager MRTD | |
| CN103018196A (en) | Fast detection method for rape water demand information | |
| CN110186566B (en) | Two-dimensional real temperature field imaging method and system based on light field camera multispectral temperature measurement | |
| CN108507674A (en) | A kind of nominal data processing method of light field light spectrum image-forming spectrometer | |
| CN109060731B (en) | Device and method for testing spectral transmittance of infrared optical system | |
| CN209656661U (en) | A kind of wheat high throughput phenotypic information acquisition device | |
| Wei et al. | The research on compensation algorithm of infrared temperature measurement based on intelligent sensors | |
| CN200996876Y (en) | Temperature field detection device in metal powder laser forming process | |
| CN105092054A (en) | Testing evaluation device for pyroelectric non-refrigeration infrared focal plane detector | |
| CN109087341B (en) | Fusion method of close-range hyperspectral camera and ranging sensor | |
| CN102128686B (en) | Infrared microscopic thermodetector | |
| CN205697730U (en) | Medical human thermal source collecting device | |
| CN110608800B (en) | Method, device and system for measuring solar radiation illuminance of atmospheric absorption band | |
| CN111458025A (en) | Device and method for remote sensing reflectivity conversion | |
| CN110146173A (en) | Thermometric consistency desired result method based on infrared temperature-test technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190830 |
|
| RJ01 | Rejection of invention patent application after publication |