CN110149741A - The control method and semiconductor microactuator wave device of semiconductor microactuator wave device - Google Patents
The control method and semiconductor microactuator wave device of semiconductor microactuator wave device Download PDFInfo
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- CN110149741A CN110149741A CN201910462710.9A CN201910462710A CN110149741A CN 110149741 A CN110149741 A CN 110149741A CN 201910462710 A CN201910462710 A CN 201910462710A CN 110149741 A CN110149741 A CN 110149741A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 298
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000005611 electricity Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 235000013305 food Nutrition 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000009102 absorption Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000010411 cooking Methods 0.000 description 2
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- 239000000835 fiber Substances 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/6447—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors
- H05B6/645—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors using temperature sensors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/6447—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors
- H05B6/6464—Method of operation or details of the microwave heating apparatus related to the use of detectors or sensors using weight sensors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/66—Circuits
- H05B6/68—Circuits for monitoring or control
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/66—Circuits
- H05B6/68—Circuits for monitoring or control
- H05B6/687—Circuits for monitoring or control for cooking
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
The invention discloses a kind of control method of semiconductor microactuator wave device and semiconductor microactuator wave devices.Control method includes: to obtain energy needed for heat load to be added in semiconductor microactuator wave device；It opens semiconductor microactuator wave source and obtains the microwave source efficiency of the output power of power supply and the reflection power of semiconductor microactuator wave source and semiconductor microactuator wave source；According to the microwave energy of the accumulative output of the microwave source efficiency calculation semiconductor microactuator wave device of the output power of power supply, the reflection power of semiconductor microactuator wave source and semiconductor microactuator wave source；And in the case where the energy needed for the microwave energy of the accumulative output of semiconductor microactuator wave device is greater than or equal to heat load to be added, control semiconductor microactuator wave source is closed.So, the accuracy of the microwave energy obtained in this way is higher, and in the case where the accumulative microwave energy exported of semiconductor microactuator wave device is more than or equal to energy needed for heat load to be added in semiconductor microactuator wave device, control semiconductor microactuator wave source is closed, and accurately culinary art may be implemented in this way and control.
Description
Technical field
The present invention relates to fields of home appliance technology, more specifically, are related to a kind of controlling party of semiconductor microactuator wave device
Method and semiconductor microactuator wave device.
Background technique
In the related art, micro-wave oven is a kind of modernization cooking appliance using microwave heating of food.Micro-wave oven can be adopted
Microwave is generated with magnetron microwave or using semiconductor microwave generator.When testing the output energy of micro-wave oven, often
The method of rule is, according to IEC (International Electrotechnical Commission, international electrical standard),
Standard termination is heated in unit time, the energy then absorbed according to the temperature rise computational load of standard termination.Most pass through afterwards
Cross the output energy that micro-wave oven in the unit time is calculated.But existing micro-wave oven cannot accurately obtain micro-wave oven
Energy is exported, and cannot realize accurate culinary art control according to the microwave energy of output.
Summary of the invention
Embodiment of the present invention provides the control method and semiconductor microactuator wave device of a kind of semiconductor microactuator wave device.
The microwave equipment of embodiment of the present invention includes semiconductor microactuator wave source and the electricity that connect with the semiconductor microactuator wave source
Source, the control method include:
Obtain energy needed for heat load to be added in the semiconductor microactuator wave device；
It opens the semiconductor microactuator wave source and obtains the reflection of the output power and the semiconductor microactuator wave source of the power supply
The microwave source efficiency of power and the semiconductor microactuator wave source；
According to the output power of the power supply, the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
The microwave energy of the accumulative output of semiconductor microactuator wave device described in microwave source efficiency calculation；And
Needed for the microwave energy of the accumulative output of the semiconductor microactuator wave device is greater than or equal to the heat load to be added
In the case where energy, controls the semiconductor microactuator wave source and close.
In the control method of the semiconductor microactuator wave device of embodiment of the present invention, by the output power of the power supply of acquisition and
The microwave of the microwave source efficiency calculation semiconductor microactuator wave device output of the reflection power and semiconductor microactuator wave source of semiconductor microactuator wave source
The accuracy of energy, the microwave energy obtained in this way is higher, and big in the microwave energy of the accumulative output of semiconductor microactuator wave device
In or equal in the case where energy needed for heat load to be added in semiconductor microactuator wave device, control semiconductor microactuator wave source is closed, this
Sample may be implemented accurately to cook control, and user experience is good.
In some embodiments, energy needed for heat load to be added in the semiconductor microactuator wave device is obtained, comprising:
Obtain type, weight and the temperature data of the heat load to be added；
Energy needed for calculating the heat load to be added according to type, weight and the temperature data of the heat load to be added.
In some embodiments, the semiconductor microactuator wave device prestore the type, weight and temperature data of load with
The corresponding relationship of required energy calculates the heat load to be added according to the type, weight and temperature data of the heat load to be added
Required energy, comprising:
It is calculated according to type, weight and the temperature data of the heat load to be added and the corresponding relationship described to be heated negative
Energy needed for carrying.
In some embodiments, the output power of the power supply and the reflection power packet of the semiconductor microactuator wave source are obtained
It includes:
Obtain the output power of the power supply in preset duration and the reflection power of the semiconductor microactuator wave source；
According to the output power of the power supply, the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
The microwave energy of the accumulative output of semiconductor microactuator wave device described in microwave source efficiency calculation, comprising:
According to the reflection power of the output power of the power supply in the preset duration and the semiconductor microactuator wave source and
The microwave source efficiency of the semiconductor microactuator wave source obtains the microwave energy of the semiconductor microactuator wave device output in the preset duration
Amount；
Described half is calculated according to the microwave energy that semiconductor microactuator wave device described in multiple preset durations exports
The microwave energy of the accumulative output of conductor microwave equipment.In some embodiments, the quantity of the semiconductor microactuator wave source is multiple,
Obtain the reflection power of the semiconductor microactuator wave source, comprising:
Obtain the sum of the reflection power of all semiconductor microactuator wave sources.
Embodiment of the present invention provides a kind of semiconductor microactuator wave device comprising controller, semiconductor microactuator wave source and power supply,
The power supply connects the semiconductor microactuator wave source, and the controller connects the semiconductor microactuator wave source and the power supply, the control
Device processed is for obtaining energy needed for heat load to be added in the semiconductor microactuator wave device, and opens the semiconductor microactuator wave source simultaneously
Obtain the microwave source of the output power of the power supply and the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
Efficiency, and according to the output power of the power supply, the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
The microwave energy of the accumulative output of semiconductor microactuator wave device described in microwave source efficiency calculation, and it is tired in the semiconductor microactuator wave device
In the case where energy needed for the microwave energy of meter output is greater than or equal to the heat load to be added, the semiconductor microwave is controlled
Source is closed.
In the semiconductor microactuator wave device of embodiment of the present invention, pass through the output power and semiconductor microwave of the power supply of acquisition
The microwave energy of the microwave source efficiency calculation semiconductor microactuator wave device output of the reflection power and semiconductor microactuator wave source in source, such
The accuracy of the microwave energy arrived is higher, and is greater than or equal in the microwave energy of the accumulative output of semiconductor microactuator wave device and partly leads
In body microwave equipment in the case where energy needed for heat load to be added, control semiconductor microactuator wave source is closed, and essence may be implemented in this way
True culinary art control, user experience are good.
In some embodiments, the controller is used to obtain the type, weight and temperature number of the heat load to be added
According to, and energy needed for calculating the heat load to be added according to type, weight and the temperature data of the heat load to be added.
In some embodiments, the semiconductor microactuator wave device prestore the type, weight and temperature data of load with
The corresponding relationship of required energy, the controller are used for type, weight and temperature data and institute according to the heat load to be added
State energy needed for corresponding relationship calculates the heat load to be added.
In some embodiments, the controller is used to obtain output power and the institute of the power supply in preset duration
State the reflection power of semiconductor microactuator wave source, and output power and the semiconductor according to the power supply in the preset duration
The reflection power of microwave source and the microwave source efficiency of the semiconductor microactuator wave source obtain the semiconductor microactuator in the preset duration
The microwave energy of wave device output, and the microwave energy exported according to semiconductor microactuator wave device described in multiple preset durations
The microwave energy of the accumulative output of the semiconductor microactuator wave device is calculated in amount.
In some embodiments, the quantity of the semiconductor microactuator wave source is multiple, and the controller is all for obtaining
The sum of the reflection power of the semiconductor microactuator wave source.
The additional aspect and advantage of embodiments of the present invention will be set forth in part in the description, partially will be from following
Description in become obvious, or the practice of embodiment through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect and advantage of the invention is from combining in description of the following accompanying drawings to embodiment by change
It obtains obviously and is readily appreciated that, in which:
Fig. 1 is the flow chart of the control method of the semiconductor microactuator wave device of embodiment of the present invention.
Fig. 2 is the module diagram of the semiconductor microactuator wave device of embodiment of the present invention.
Fig. 3 is the structural schematic diagram of the semiconductor microactuator wave device of embodiment of the present invention.
Fig. 4 is another flow chart of the control method of the semiconductor microactuator wave device of embodiment of the present invention.
Fig. 5 is the another flow chart of the control method of the semiconductor microactuator wave device of embodiment of the present invention.
Main element symbol description:
Semiconductor microactuator wave device 100, semiconductor microactuator wave source 10, power supply 20, load 30, controller 40, cavity 50, transmission dress
Set 60, first detection module 70, the second detection module 80.
Specific embodiment
Embodiments of the present invention are described below in detail, the example of embodiment is shown in the accompanying drawings, wherein identical or class
As label indicate same or similar element or element with the same or similar functions from beginning to end.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of embodiments of the present invention, term " first ", " second " are used for description purposes only, and cannot understand
For indication or suggestion relative importance or implicitly indicate the quantity of indicated technical characteristic.Define as a result, " first ",
The feature of " second " can explicitly or implicitly include one or more feature.In embodiments of the present invention
In description, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of embodiments of the present invention, it should be noted that unless otherwise clearly defined and limited, term
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；Can be directly connected, can also indirectly connected through an intermediary, can be connection inside two elements or
The interaction relationship of two elements.For the ordinary skill in the art, can understand as the case may be above-mentioned
The concrete meaning of term in embodiments of the present invention.
Following disclosure provides many different embodiments or example is used to realize embodiments of the present invention not
Same structure.In order to simplify the disclosure of embodiments of the present invention, hereinafter the component of specific examples and setting are described.When
So, they are merely examples, and is not intended to limit the present invention.In addition, embodiments of the present invention can be in different examples
Repeat reference numerals and/or reference letter in son, this repetition are for purposes of simplicity and clarity, itself not indicate to be begged for
By the relationship between various embodiments and/or setting.In addition, the various specific techniques that embodiments of the present invention provide
With the example of material, but those of ordinary skill in the art may be aware that the application of other techniques and/or other materials make
With.
Fig. 1 and Fig. 2 is please referred to, the control method of the semiconductor microactuator wave device 100 of embodiment of the present invention can be applied to this
The semiconductor microactuator wave device 100 of invention embodiment.Semiconductor microactuator wave device 100 includes semiconductor microactuator wave source 10 and and semiconductor
The power supply 20 that microwave source 10 connects, control method include:
Step S10 obtains energy needed for heat load 30 to be added in semiconductor microactuator wave device 100；
Step S20, open semiconductor microactuator wave source 10 and obtain power supply 20 output power and semiconductor microactuator wave source 10 it is anti-
Penetrate the microwave source efficiency of power and semiconductor microactuator wave source 10；
Step S30, according to the reflection power and semiconductor microactuator wave source of the output power of power supply 20 and semiconductor microactuator wave source 10
The accumulative output of microwave source efficiency calculation semiconductor microactuator wave device 100 microwave energy；
It is to be heated negative to judge whether the microwave energy of the accumulative output of semiconductor microactuator wave device 100 is greater than or equal to by step S40
Energy needed for carrying 30；And
The microwave energy of the accumulative output of semiconductor microactuator wave device 100 be greater than or equal in semiconductor microactuator wave device 100 to
In the case where energy needed for heating load 30, step S50, control semiconductor microactuator wave source 10 is closed.
The control method of the semiconductor microactuator wave device 100 of embodiment of the present invention can be by the semiconductor of embodiment of the present invention
Microwave equipment 100 is realized.Semiconductor microactuator wave device 100 includes controller 40, and controller 40 connects semiconductor microactuator wave source 10 and electricity
Source 20.Wherein, step S10, step S20, step S30, step S40 and step S50 can be realized by controller 40.
That is, controller 40 is for obtaining energy needed for heat load 30 to be added in semiconductor microactuator wave device 100, and
It opens semiconductor microactuator wave source 10 and obtains the output power of power supply 20 and the reflection power and semiconductor microactuator of semiconductor microactuator wave source 10
The microwave source efficiency of wave source 10, and reflection power and semiconductor microactuator according to the output power of power supply 20, semiconductor microactuator wave source 10
The microwave energy of the accumulative output of the microwave source efficiency calculation semiconductor microactuator wave device 100 of wave source 10, and judge that semiconductor microwave is set
Whether the microwave energies of standby 100 accumulative outputs are greater than or equal to energy needed for heat load 30 to be added in microwave equipment 100, and
It is greater than or equal to heat load to be added in semiconductor microactuator wave device 100 in the microwave energy of the accumulative output of semiconductor microactuator wave device 100
In the case where energy needed for 30, control semiconductor microactuator wave source 10 is closed.
In the control method and semiconductor microactuator wave device 100 of the semiconductor microactuator wave device 100 of above embodiment, by obtaining
The microwave source efficiency meter of the output power of the power supply 20 taken and the reflection power of semiconductor microactuator wave source 10 and semiconductor microactuator wave source 10
The microwave energy of the accumulative output of semiconductor microactuator wave device 100 is calculated, the accuracy of the microwave energy obtained in this way is higher, and half
The microwave energy of the accumulative output of conductor microwave equipment 100 reaches energy needed for heat load to be added in semiconductor microactuator wave device 100
In the case where, control semiconductor microactuator wave source is closed, and may be implemented accurately to cook control in this way, user experience is good.
Specifically, semiconductor microactuator wave device 100 includes but is not limited to micro-wave oven, microwave oven etc..Semiconductor microactuator wave device
100 include cavity 50 and transmitting device 60.Heat load 30 to be added, as food can be placed in cavity 50.Transmitting device 60 is used for
The microwave that transferring semiconductor microwave source 10 generates.Transmitting device 60 includes waveguide and antenna.In one embodiment, semiconductor
Microwave equipment 100 can be semiconductor microwave oven.Semiconductor microactuator wave source 10 can produce the microwave signal of 2.4GHz~2.5GHz.Partly lead
The quantity of body microwave source 10 can be one or more.What the microwave signal that semiconductor microactuator wave source 10 generates can be coupled by antenna
Mode enters in the cavity 50 of semiconductor microactuator wave device 100.
The power supply 20 of present embodiment can be DC power supply 20, can be used for providing electricity to the work of semiconductor microactuator wave source 10
Can, so that semiconductor microactuator wave source 10 generates microwave signal.Controller 40 may include MCU (Microcontroller Unit, it is micro-
Control unit).
In the present embodiment, load 30 can be food, and in semiconductor microactuator wave device 100 needed for heat load 30 to be added
Energy be understood that for load 30 to be heated to energy required for culinary art is completed.The type of load 30 is different, then loads 30 institutes
Corresponding specific heat capacity also can be different.In the present embodiment, load 30 is heated to the kind of ripe required energy and load 30
Class and weight are related.
Please refer to figs. 2 and 3, and in the present embodiment, semiconductor microactuator wave device 100 includes first detection module 70, the
One detection module 70 is used to detect the output voltage and output electric current of power supply 20.After the starting of semiconductor microactuator wave source 10, controller
40 can obtain the output voltage and output electric current of power supply 20 by first detection module 70, further according to output voltage and output electricity
The output power of stream calculation power supply 20, and the output of power supply 20 can be calculated according to the output power of power supply 20 for controller 40
Energy.It should be noted that the quantity of power supply 20 can be one or more.In one embodiment, a power supply 20 can
Connect a semiconductor microactuator wave source 10.In another embodiment, a power supply 20 can connect multiple semiconductor microactuator wave sources 10.
First detection module 70 can be integrated in the detection circuit in controller 40, be also possible in 40 outside of controller and connect control
The circuit module of device 40 processed.
Semiconductor microactuator wave device 100 further includes the second detection module 80, and the second detection module 80 can detecte from cavity 50
The reflection power of reflected semiconductor microactuator wave source 10.Controller 40 can obtain semiconductor microactuator wave source from the second detection module 80
10 reflection power is calculated further according to the reflection power of semiconductor microactuator wave source 10 from the reflected energy of cavity 50, and power supply
20 output energy and the microwave energy that can be understood as 30 actual absorptions of load from the reflected energy differences of cavity 50,
That is the microwave energy in the accumulative output of present embodiment semiconductor microactuator wave device 100 can be regarded as 30 actual absorptions of load
Microwave energy.
In the present embodiment, the microwave source efficiency of semiconductor microactuator wave source 10 can be understood as semiconductor microactuator wave source 10 will be defeated
The electric energy entered is converted to the transformation efficiency of microwave energy.It should be noted that the microwave source efficiency of the semiconductor microactuator wave source 10 can
To be obtained in advance by many experiments, the microwave source efficiency of the semiconductor microactuator wave source 10 can be stored in advance in semiconductor microactuator wave device
In 100.
It should be noted that in some embodiments, the quantity of semiconductor microactuator wave source 10 be it is multiple, obtained in step S20
The reflection power for taking semiconductor microactuator wave source 10 includes: to obtain the sum of the reflection power of all semiconductor microactuator wave sources 10.
It is appreciated that the second detection module 80, which can detecte, is not supported 30 suctions by what multiple semiconductor microactuator wave sources 10 issued
It receives and the sum of reflected reflection power.
The microwave energy of the accumulative output of semiconductor microactuator wave device 100 be greater than or equal in semiconductor microactuator wave device 100 to
In the case where energy needed for heating load 30, that is to say, that the microwave energy of 30 actual absorptions of load, which is greater than or equal to, partly leads
Energy needed for heat load 30 to be added in body microwave equipment 100 illustrates that completion has been cooked in load 30, at this point, controller 40
Controllable semiconductor microactuator wave device 100 stops heating, i.e. control semiconductor microactuator wave source 10 is closed.
Referring to Fig. 1, in some embodiments, control method includes:
It is less than in the microwave energy of the accumulative output of semiconductor microactuator wave device 100 to be heated negative in semiconductor microactuator wave device 100
In the case where energy needed for carrying 30, return step S30.
The control method of the semiconductor microactuator wave device 100 of above embodiment can be by the controller 40 of embodiment of the present invention
It realizes.Controller 40 is used to be less than in semiconductor microactuator wave device 100 in the microwave energy of the accumulative output of semiconductor microactuator wave device 100
In the case where energy needed for heat load 30 to be added, according to the reflection power of the output power of power supply 20 and semiconductor microactuator wave source 10
Calculate the microwave energy of the accumulative output of semiconductor microactuator wave device 100.
It is appreciated that controller 40 constantly judges whether the microwave energy of the accumulative output of semiconductor microactuator wave device 100 is big
In or equal to energy needed for heat load 30 to be added in semiconductor microactuator wave device 100, in the accumulative output of semiconductor microactuator wave device 100
Microwave energy be less than in semiconductor microactuator wave device 100 in the case where energy needed for heat load 30 to be added, illustrate partly to lead at this time
The microwave energy of the accumulative output of body microwave equipment 100 is also cooked insufficient for load 30 to ripe degree, at this point, keeping partly leading
Body microwave source 10 continues starting, until the microwave energy of the accumulative output of semiconductor microactuator wave device 100 is greater than or equal to semiconductor microactuator
In wave device 100 in the case where energy needed for heat load 30 to be added, S50 is entered step.
Referring to Fig. 4, in some embodiments, step S10 includes:
Step S12 obtains type, weight and the temperature data of heat load 30 to be added；
Step S14, energy needed for calculating heat load 30 to be added according to type, weight and the temperature data of heat load 30 to be added
Amount.
The control method of above embodiment semiconductor microactuator wave device 100 can be by the semiconductor microwave of embodiment of the present invention
Equipment 100 is realized.Wherein, step S12 and step S14 can be realized by the controller 40 of present embodiment.That is, control
Device 40 is used to obtain type, weight and the temperature data of heat load 30 to be added, and according to the type of heat load 30 to be added, weight and
Energy needed for temperature data calculates heat load 30 to be added.
In this way, according to type, weight and the temperature data of heat load 30 to be added, and according to the type of heat load 30 to be added,
Energy needed for weight and temperature data calculate heat load 30 to be added can quickly and accurately obtain heat load 30 to be added in this way
Required energy.
It should be noted that the temperature data of present embodiment includes the initial temperature for loading 30 and the temperature of heating end
Degree.
In some embodiments, semiconductor microactuator wave device 100 prestore load 30 type, weight and temperature data with
The corresponding relationship of required energy, step S14 include:
Needed for calculating heat load 30 to be added according to type, weight and the temperature data of heat load 30 to be added and corresponding relationship
Energy.
The control method of above embodiment can be realized by the semiconductor microactuator wave device 100 of present embodiment.Controller 40
For energy needed for calculating heat load 30 to be added according to type, weight and the temperature data of heat load 30 to be added and corresponding relationship
Amount.
In this way, energy needed for can quickly and accurately calculating heat load 30 to be added in this way, accuracy is high.
Specifically, corresponding relationship may include heat Calculation formula: Q=cm Δ t, wherein the load 30 of Q expression Unit Weight
The heat absorbed, C indicate the specific heat capacity of load 30, and Δ t indicates the difference for the temperature that the initial temperature of load 30 and heating terminate
Value, m indicate the quality of load 30, that is, represent the weight of load 30.
The type of load 30 is related to the specific heat capacity of load 30.Load 30 can be the foods such as water, milk, rice, meat.No
Same food species correspond to different specific heat capacities.The initial temperature of load 30 is generally (25 DEG C, or the temperature being placed in refrigerator of room temperature
Degree), initial temperature can be the temperature of default, is also possible to be selected by user or semiconductor microactuator wave device 100 is utilized to have by oneself
Temperature sensor detects to obtain.It is also related with the type of load 30 to heat the temperature terminated.The type of different loads 30 is corresponding
The temperature that heating when culinary art is completed terminates is also not identical.It in the present embodiment, can be in advance in semiconductor microactuator wave device
Specific heat capacity corresponding to different 30 type of load of 100 storages and the culinary art temperature that required heating terminates when completing.It is different
Load 30 be heated to ripe temperature data can be by experimental calibration.
The type of load 30 can be selected by user, or be identified using the identification equipment that semiconductor microactuator wave device 100 is had by oneself.
In present embodiment, semiconductor microactuator wave device 100 includes identification equipment to identify the type of load 30.Identification equipment may include peace
Mounted in the camera of the cavity of semiconductor microactuator wave device 100, controller 40 will pass through the collected load chart of camera and number
It is matched according to the default template in library, when matching degree is greater than or equal to preset threshold, then identifies success.If recognition failures,
Prompt user is manually entered.
After the type for getting load 40, controller 40 can get 30 corresponding specific heat capacities of load and heat end
Temperature, according to formula heat Calculation formula: Q=cm Δ t calculates the heat absorbed required for the load 30 that weight is m.Separately
Outside, in semiconductor microactuator wave device 100, the microwave energy almost all being incident in cavity 50 is supported 30 sorption enhanceds as heat
Amount (small part microwave is that cavity 50 and air absorb), as long as therefore control the microwave energy that semiconductor microactuator wave device 100 exports,
That is the temperature that heating terminates is raised to when the microwave energy that semiconductor microactuator wave device 100 exports is equal to the load 30 to be heated
Cooking can be completed for required heat when spending.
In one embodiment, load 30 is water, and it is water that semiconductor microactuator wave device 100, which can load 30 with automatic identification, or
It is water that person user, which inputs load 30 to be heated, and controller 40 gets the ratio of water from the memory of semiconductor microactuator wave device 100
Thermal capacitance is 4.2 × 103J/ (kg DEG C), and semiconductor microactuator wave device 100 detects that the weight of water is 1kg.Semiconductor microwave is set
The standby initial temperature for detecting water is 25 degrees Celsius, and controller 40 gets water and is heated to temperature required for boiling and is
100 degrees Celsius.Controller 40 is according to type, weight and the temperature data and corresponding relationship of heat load 30 to be added, that is to say, that logical
Heat Calculation formula is crossed, Q=cm Δ t, calculating energy needed for heating water to boiling is Q=4.2 × 103J/ (kg DEG C) × 1
× (100 DEG C -25 DEG C)=3.15 × 105J。
Referring to Fig. 5, obtaining the output power and semiconductor microactuator wave source 10 of power supply 20 in step S20 in certain modes
Reflection power, comprising:
Step S22 obtains the output power of the power supply 20 in preset duration and the reflection power of semiconductor microactuator wave source 10；
Step S30 includes:
Step S32, according to the reflection power of the output power of the power supply 20 in preset duration and semiconductor microactuator wave source 10 and
The microwave source efficiency of semiconductor microactuator wave source 10 obtains the microwave energy that semiconductor microactuator wave device 100 exports in preset duration；
Step S34 is calculated according to the microwave energy that semiconductor microactuator wave device 100 in multiple preset durations exports and partly leads
The microwave energy of the accumulative output of body microwave equipment 100.
The control method of above embodiment can be realized by the semiconductor microactuator wave device 100 of present embodiment.Wherein, step
22, step S32 and step S34 can be realized by controller 40.Controller 40 is used to obtain the defeated of the power supply 20 in preset duration
The reflection power of power and semiconductor microactuator wave source 10 out, and output power and semiconductor microactuator according to the power supply 20 in preset duration
It is defeated that the reflection power of wave source 10 and the microwave source efficiency of semiconductor microactuator wave source 10 obtain semiconductor microactuator wave device 100 in preset duration
Microwave energy out, and half is calculated according to the microwave energy that semiconductor microactuator wave device 100 in multiple preset durations exports
The microwave energy of the accumulative output of conductor microwave equipment 100.
Specifically, in present embodiment, preset duration can be used as the unit time.Due to the electricity of semiconductor microactuator wave device 100
The output power in source may because of a variety of causes, such as the factors such as the variation of environment temperature, voltage fluctuation of power supply 20 and occur
Fluctuation, therefore can be in the unit time, such as in 2 seconds, 5 seconds or 10 seconds, the output power of power supply 20 is repeatedly adopted
Sample, and the output power data of power supply 20 obtained by sampling are handled to obtain the output work of the power supply 20 within this unit time
Rate, such as the multiple output power data obtained to sampling are averaged, using the average value as the electricity in this unit time
The output power in source 20.
To in the unit time, such as in 2 seconds, 5 seconds or 10 seconds, the reflection power of semiconductor microwave source 10 is carried out multiple
Sampling, and the reflection power data of semiconductor microactuator wave source obtained by sampling are handled to obtain the semiconductor within this unit time
The reflection power of microwave source, such as the reflection power data obtained to sampling are averaged, using the average value as this unit
The unit reflection power of semiconductor microactuator wave source 10 in time.
During calculating the microwave energy of the accumulative output of semiconductor microactuator wave device 100, can first calculate one it is default when
The microwave energy that semiconductor microactuator wave device 100 in length exports, specifically, the semiconductor microactuator wave device 100 in preset duration is defeated
Microwave energy out=(semiconductor microactuator wave source in the output power of preset duration interior power 20 × microwave source efficiency-preset duration
10 reflection power) × preset duration, the microwave energy for then exporting the semiconductor microactuator wave device 100 in multiple preset durations
It is added up to obtain the microwave energy of the accumulative output of semiconductor microactuator wave device 100.
It is appreciated that preset duration is shorter, the output power of the power supply 20 being calculated and semiconductor microactuator wave device 100
Reflection power gets over closing to reality performance number, and the microwave energy that the semiconductor microactuator wave device 100 of calculating exports can be more acurrate.
It should be noted that in other implementations, output power data to the power supply 20 in the unit time and
The reflection power data of semiconductor microactuator wave source 10 in unit time can reject some abnormal data, example when being sampled
Such as, the data of the output power of the data of the output power of excessively high power supply 20 or too low power supply 20.Or other real
It applies in mode, to the anti-of the semiconductor microactuator wave source 10 in the data and unit time of the output power of the power supply 20 in the unit time
The data for penetrating power are sampled seeks unit capacity and unit reflection power by way of weight.
Operating parameter of the user in the input interface input semiconductor microactuator wave device 100 of semiconductor microactuator wave device 100.Control
Device 40 obtains the output power of power supply 20 and the reflection power of semiconductor microactuator wave source 10.Specifically, it is read in preset duration
Multiple output power values of power supply 20 are simultaneously handled to obtain the output power of the power supply 20 in this preset duration, for example, 1 second
The data of the interior output power for reading 10 power supplys 20, and average value is calculated to obtain the output power of this 1 second interior power 20.Together
When, multiple data of the reflection power of the semiconductor microactuator wave source 10 read in this preset duration are simultaneously handled pre- to obtain this
If the output power of the semiconductor microactuator wave source 10 in duration.For example, reading the reflection power of 10 semiconductor microactuator wave sources 10 in 1 second
Data, and calculate average value to obtain the output power of semiconductor microactuator wave source 10 in this 1 second.Controller 40 is from semiconductor microwave
The memory of equipment 100 gets the microwave source efficiency of semiconductor microactuator wave source 10.
In one embodiment, microwave source efficiency is 90%, in first preset duration T1, the output power of power supply 20
Reflection power for G1, semiconductor microactuator wave source 10 is G2, then semiconductor microactuator wave device 100 exports in first preset duration
Microwave energy are as follows: W1=(G1 × 90%-G2) × T1.
In second unit time T2, the output power of power supply 20 is G3, and the output power of semiconductor microactuator wave source 10 is
G4, the then microwave energy that semiconductor microactuator wave device 100 exports within second unit time are as follows: W2=(G3 × 90%-G4) ×
T2。
In third unit time T3, the output power of power supply 20 is G5, and the output power of semiconductor microactuator wave source 10 is
G6, the then microwave energy that semiconductor microactuator wave device 100 exports within the third unit time are as follows: W3=(G5 × 90%-G6) ×
T3。
And so on, the microwave energy constantly exported to semiconductor microactuator wave device 100 in multiple preset durations adds up
To obtain the microwave energy W=W1+W2+W3+ ...+Wn of the accumulative output of semiconductor microactuator wave device.
Controller 40 judges whether the microwave energy W of the accumulative output of semiconductor microactuator wave device 100 is greater than or equal to semiconductor
Energy Q needed for heat load 30 to be added in microwave equipment 100 is big in the microwave energy W of the accumulative output of semiconductor microactuator wave device 100
In or equal in the case where energy Q needed for heat load 30 to be added in semiconductor microactuator wave device 100, semiconductor microactuator wave device is controlled
100 stop heating.The microwave energy of the accumulative output of semiconductor microactuator wave device 100 be W be less than in semiconductor microactuator wave device 100 to
In the case where energy Q needed for heating load 30, control semiconductor microactuator wave device 100 continues to heat, so that semiconductor microwave is set
The microwave energies of standby 100 accumulative outputs are gradually increased, be greater than until the microwave energy of the accumulative output of semiconductor microactuator wave device 100 or
Equal to energy Q needed for heat load 30 to be added in semiconductor microactuator wave device 100.
In the description of this specification, reference term " embodiment ", " some embodiments ", " schematically implementation
The description of mode ", " example ", specific examples or " some examples " etc. means the tool described in conjunction with the embodiment or example
Body characteristics, structure, material or feature are contained at least one embodiment or example of the invention.In the present specification,
Schematic expression of the above terms are not necessarily referring to identical embodiment or example.Moreover, the specific features of description, knot
Structure, material or feature can be combined in any suitable manner in any one or more embodiments or example.
Any process described otherwise above or method description are construed as in flow chart or herein, and expression includes
It is one or more for realizing specific logical function or process the step of executable instruction code module, segment or portion
Point, and the range of the preferred embodiment of the present invention includes other realization, wherein can not press shown or discussed suitable
Sequence, including according to related function by it is basic simultaneously in the way of or in the opposite order, Lai Zhihang function, this should be of the invention
Embodiment person of ordinary skill in the field understood.
Expression or logic and/or step described otherwise above herein in flow charts, for example, being considered use
In the order list for the executable instruction for realizing logic function, may be embodied in any computer-readable medium, for
Instruction execution system, device or equipment (such as computer based system, including the system of processing module or other can be from instruction
Execute system, device or equipment instruction fetch and the system that executes instruction) use, or combine these instruction execution systems, device or
Equipment and use.For the purpose of this specification, " computer-readable medium " can be it is any may include, store, communicating, propagating or
Transfer program uses for instruction execution system, device or equipment or in conjunction with these instruction execution systems, device or equipment
Device.The more specific example (non-exhaustive list) of computer-readable medium include the following: there are one or more wirings
Electrical connection section (control method), portable computer diskette box (magnetic device), random access memory (RAM), read-only memory
(ROM), erasable edit read-only storage (EPROM or flash memory), fiber device and portable optic disk is read-only deposits
Reservoir (CDROM).In addition, computer-readable medium can even is that the paper that can print described program on it or other are suitable
Medium, because can then be edited, be interpreted or when necessary with it for example by carrying out optical scanner to paper or other media
His suitable method is handled electronically to obtain described program, is then stored in computer storage.
It should be appreciated that each section of embodiments of the present invention can be with hardware, software, firmware or their combination come real
It is existing.In the above-described embodiment, multiple steps or method can be with storages in memory and by suitable instruction execution system
The software or firmware of execution is realized.For example, if realized with hardware, in another embodiment, ability can be used
Any one of following technology or their combination well known to domain is realized: being had for realizing logic function to data-signal
The discrete logic of logic gates, the specific integrated circuit with suitable combinational logic gate circuit, programmable gate array
(PGA), field programmable gate array (FPGA) etc..
Those skilled in the art are understood that realize all or part of step that above-described embodiment method carries
It suddenly is that relevant hardware can be instructed to complete by program, the program can store in a kind of computer-readable storage medium
In matter, which when being executed, includes the steps that one or a combination set of embodiment of the method.
In addition, each functional unit in various embodiments of the present invention can integrate in a processing module, it can also
To be that each unit physically exists alone, can also be integrated in two or more units in a module.It is above-mentioned integrated
Module both can take the form of hardware realization, can also be realized in the form of software function module.The integrated module
If in the form of software function module realize and when sold or used as an independent product, also can store one calculating
In machine read/write memory medium.
Storage medium mentioned above can be read-only memory, disk or CD etc..
Although embodiments of the present invention have been shown and described above, it is to be understood that above embodiment is
Illustratively, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be right
Above-mentioned implementation implementation is changed, modifies, replacement and variant.
Claims (10)
1. a kind of control method of semiconductor microactuator wave device, which is characterized in that the semiconductor microactuator wave device includes semiconductor microactuator
Wave source and the power supply connecting with the semiconductor microactuator wave source, the control method include:
Obtain energy needed for heat load to be added in the semiconductor microactuator wave device；
It opens the semiconductor microactuator wave source and obtains the output power of the power supply and the reflection power of the semiconductor microactuator wave source
With the microwave source efficiency of the semiconductor microactuator wave source；
According to the output power of the power supply, the microwave of the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
Source efficiency calculates the microwave energy of the accumulative output of the semiconductor microactuator wave device；And
Energy needed for being greater than or equal to the heat load to be added in the microwave energy of the accumulative output of the semiconductor microactuator wave device
In the case where, it controls the semiconductor microactuator wave source and closes.
2. control method according to claim 1, which is characterized in that obtain to be heated negative in the semiconductor microactuator wave device
Energy needed for carrying, comprising:
Obtain type, weight and the temperature data of the heat load to be added；
Energy needed for calculating the heat load to be added according to type, weight and the temperature data of the heat load to be added.
3. control method according to claim 2, which is characterized in that the semiconductor microactuator wave device prestores the kind of load
The corresponding relationship of class, weight and temperature data and required energy, according to type, weight and the temperature data of the heat load to be added
Energy needed for calculating the heat load to be added, comprising:
The heat load institute to be added is calculated according to type, weight and the temperature data of the heat load to be added and the corresponding relationship
The energy needed.
4. control method according to claim 1, which is characterized in that obtain the output power of the power supply and described partly lead
The reflection power of body microwave source includes:
Obtain the output power of the power supply in preset duration and the reflection power of the semiconductor microactuator wave source；
According to the output power of the power supply, the microwave of the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
Source efficiency calculates the microwave energy of the accumulative output of the semiconductor microactuator wave device, comprising:
According to the reflection power of the output power of the power supply in the preset duration and the semiconductor microactuator wave source and described
The microwave source efficiency of semiconductor microactuator wave source obtains the microwave energy of the semiconductor microactuator wave device output in the preset duration；
The semiconductor is calculated according to the microwave energy that semiconductor microactuator wave device described in multiple preset durations exports
The microwave energy of the accumulative output of microwave equipment.
5. control method according to claim 1, which is characterized in that the quantity of the semiconductor microactuator wave source be it is multiple, obtain
Take the reflection power of the semiconductor microactuator wave source, comprising:
Obtain the sum of the reflection power of all semiconductor microactuator wave sources.
6. a kind of semiconductor microactuator wave device, which is characterized in that including controller, semiconductor microactuator wave source and power supply, the power supply connects
The semiconductor microactuator wave source is connect, the controller connects the semiconductor microactuator wave source and the power supply, and the controller is for obtaining
Energy needed for heat load to be added in the semiconductor microactuator wave device is taken, and opens the semiconductor microactuator wave source and obtains the electricity
The microwave source efficiency of the reflection power and the semiconductor microactuator wave source of the output power in source and the semiconductor microactuator wave source, and according to
The microwave source efficiency meter of the output power of the power supply, the reflection power of the semiconductor microactuator wave source and the semiconductor microactuator wave source
Calculate the microwave energy of the accumulative output of the semiconductor microactuator wave device, and the microwave in the accumulative output of the semiconductor microactuator wave device
In the case where energy needed for energy is greater than or equal to the heat load to be added, controls the semiconductor microactuator wave source and close.
7. semiconductor microactuator wave device according to claim 6, which is characterized in that the controller is described to be added for obtaining
Type, weight and the temperature data of heat load, and according to the calculating of the type of the heat load to be added, weight and temperature data
Energy needed for heat load to be added.
8. semiconductor microactuator wave device according to claim 7, which is characterized in that the semiconductor microactuator wave device prestores negative
Type, weight and the temperature data of load and the corresponding relationship of required energy, the controller are used for according to the heat load to be added
Type, weight and temperature data and the corresponding relationship calculate the heat load to be added needed for energy.
9. semiconductor microactuator wave device according to claim 6, which is characterized in that the controller is for obtaining preset duration
The reflection power of the output power of the interior power supply and the semiconductor microactuator wave source, and according in the preset duration
The microwave source efficiency of the reflection power and the semiconductor microactuator wave source of the output power of power supply and the semiconductor microactuator wave source obtains
The microwave energy of the semiconductor microactuator wave device output in the preset duration, and according to described in multiple preset durations
The microwave energy of the accumulative output of the semiconductor microactuator wave device is calculated in the microwave energy of semiconductor microactuator wave device output.
10. semiconductor microactuator wave device according to claim 6, which is characterized in that the quantity of the semiconductor microactuator wave source is
Multiple, the controller is used to obtain the sum of the reflection power of all semiconductor microactuator wave sources.
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