[go: up one dir, main page]

CN110139457B - Sub-vacuum low-temperature plasma on-line continuous material processing device - Google Patents

Sub-vacuum low-temperature plasma on-line continuous material processing device Download PDF

Info

Publication number
CN110139457B
CN110139457B CN201811310125.9A CN201811310125A CN110139457B CN 110139457 B CN110139457 B CN 110139457B CN 201811310125 A CN201811310125 A CN 201811310125A CN 110139457 B CN110139457 B CN 110139457B
Authority
CN
China
Prior art keywords
sub
temperature plasma
vacuum
electrode group
phase high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811310125.9A
Other languages
Chinese (zh)
Other versions
CN110139457A (en
Inventor
万京林
李瞳玥
万良淏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Suman Plasma Technology Co ltd
Original Assignee
Nanjing Suman Plasma Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Suman Plasma Technology Co ltd filed Critical Nanjing Suman Plasma Technology Co ltd
Priority to CN201811310125.9A priority Critical patent/CN110139457B/en
Publication of CN110139457A publication Critical patent/CN110139457A/en
Application granted granted Critical
Publication of CN110139457B publication Critical patent/CN110139457B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/2406Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2437Multilayer systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00Applications of plasma devices
    • H05H2245/40Surface treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The utility model provides a sub-vacuum low temperature plasma on-line continuous material processing apparatus, includes unreeling mechanism, sub-vacuum low temperature plasma material processing equipment and unreels the mechanism, and sub-vacuum low temperature plasma material processing equipment includes more than one main cavity and multistage vacuum buffer chamber, and main cavity is located the centre, and buffer chamber at each level distributes in main cavity both sides symmetrically, arranges in proper order along the trend of material, seal through the baffle between main cavity and the buffer chamber or between the adjacent buffer chamber, be equipped with the through-hole in the middle part of the baffle, sub-vacuum low temperature plasma material processing equipment's electrode group runs through main cavity and each buffer chamber, and the material passes in the discharge gap of electrode group, the vacuum range of main cavity is 99900 ~10 Pa. The invention can realize continuous treatment of materials within a certain wide range in a sub-vacuum environment, and has better treatment effect on the materials compared with a normal pressure low temperature plasma treatment device, high working efficiency and stable work.

Description

Sub-vacuum low-temperature plasma on-line continuous material processing device
Technical Field
The invention relates to the technical field of low-temperature plasmas, in particular to a sub-vacuum low-temperature plasma online continuous material processing device.
Background
The plasma is a high-energy substance aggregation state, and contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, photons, free radicals and the like. The plasma treatment of the material can cause physical changes (such as etching, desorption, sputtering, injection, excitation, ionization and the like) and chemical changes (such as oxidation, decomposition, crosslinking, polymerization, grafting and the like) on the surface of the material, so as to achieve the aim of changing the surface characteristics (including hydrophilicity, hydrophobicity, adhesiveness, flame retardance, corrosion resistance, antistatic property and biocompatibility) of the material. The plasma may be generated by means of glow discharge, corona discharge, dielectric barrier discharge, radio frequency discharge, microwave discharge, etc. Dielectric barrier discharge is a non-equilibrium gas discharge with an insulating medium inserted into the discharge space. The space between two discharge electrodes is filled with a certain working gas, one or two electrodes are covered by an insulating medium, or the medium can be directly hung in the discharge space or filled in the space by adopting a granular medium, when a high enough alternating voltage is applied between the two electrodes, the gas between the electrodes can be broken down to generate discharge, namely dielectric barrier discharge is generated.
Dielectric Barrier Discharge (DBD) is an unbalanced gas discharge, also called dielectric barrier discharge or silent discharge, with an insulating medium inserted into the discharge space. The dielectric barrier discharge can generate discharge in a wide air pressure range from low air pressure to high air pressure, and can also work in a wide frequency range, the common working air pressure is 10 4~106, and the power supply frequency can be from 50Hz to 1MHz. The electrode structure is variously designed. The space between two discharge electrodes is filled with a certain working gas, one or two electrodes are covered by an insulating medium, or the medium can be directly hung in the discharge space or filled in the space by adopting a granular medium, when a high enough alternating voltage is applied between the two electrodes, the gas between the electrodes can be broken down to generate discharge, namely dielectric barrier discharge is generated. In practical applications, the pipeline type electrode structure is widely applied to various chemical reactors, while the flat plate type electrode structure is widely applied to modification, grafting, surface tension improvement, cleaning and hydrophilic modification of polymers, metal films and plates in industry.
Disclosure of Invention
Aiming at the problems that the normal pressure low temperature plasma treatment device has insufficient material treatment effect and high treatment temperature, can not treat the fiber covered by the fiber tows, is difficult to realize continuous treatment in a vacuum environment, can not collect treatment energy near the material, and has high requirement on the vacuum environment, the invention provides a sub-vacuum low temperature plasma online continuous material treatment device which can realize uniform low temperature plasma of glow discharge under the sub-vacuum condition and can effectively and continuously treat the required treatment material.
The technical scheme of the invention is as follows:
The utility model provides a sub-vacuum low temperature plasma on-line continuous material processing apparatus, includes unreeling mechanism, sub-vacuum low temperature plasma material processing equipment and winding mechanism, its characterized in that:
The sub-vacuum low-temperature plasma material treatment equipment comprises more than one main cavity and multistage vacuum buffer cavities, wherein the main cavity is positioned in the middle, the buffer cavities at all stages are symmetrically distributed at two sides of the main cavity and are sequentially distributed along the trend of a material to be treated, the space between the main cavity and the buffer cavities or between adjacent buffer cavities is sealed by a partition plate, the middle part of the partition plate is provided with a through hole for a dielectric barrier structure electrode group and the material to pass through, the electrode group of the sub-vacuum low-temperature plasma material treatment equipment penetrates through the main cavity and each buffer cavity, the material passes through a discharge gap of the electrode group, and the vacuum range of the main cavity is 99900-10 Pa.
In addition to the above, a further improved or preferred embodiment further includes:
The electrode group is closely abutted against the inner wall of the through hole, and the discharge gap is controlled between 1 mm and 300 mm.
The electrode group comprises a positive phase high-voltage electrode group and a negative phase high-voltage electrode group, the positive phase high-voltage electrode group comprises more than one positive phase high-voltage electrode, the negative phase high-voltage electrode group comprises more than one negative phase high-voltage electrode, the positive phase high-voltage electrode is connected with a positive phase high-voltage output end of a plasma excitation power supply, and the negative phase high-voltage electrode is connected with a negative phase high-voltage output end of the plasma excitation power supply.
The plasma excitation power supply is a differential power supply, and the output amplitude of the positive phase high-voltage output end and the output amplitude of the negative phase high-voltage output end are equal and opposite.
And one ends of the outer sides of the two outermost buffer cavities are respectively provided with an atmosphere inlet, and the atmosphere inlets are connected with an atmosphere gas cylinder.
The electrode group is an electrode with a metal hollow tube arranged inside and a corundum, quartz or ceramic blocking medium covered outside, and the metal hollow tube is connected with the cooling fan.
The beneficial effects are that:
The device for processing the linear material by the sub-vacuum low-temperature plasma on line can realize continuous processing of the linear material in a sub-vacuum environment, can meet the requirement that the surface tension and the surface energy of the material are improved after the material is processed, has better processing effect on the material compared with a normal-pressure low-temperature plasma processing device, has low processing temperature and energy concentrated near the processed material, can process fiber parts which are mutually overlapped in a bundle of fibers, has high working efficiency and stable work, ensures that a main cavity stably maintains the dynamic balance state of the sub-vacuum through the barrier function of a buffer cavity, and breaks the bottleneck that glow discharge can be realized only below kilopascal level. The invention has low requirement on vacuum environment, easy vacuum pumping, low equipment cost, energy conservation, high concentration of treatment atmosphere and capability of applying various gases.
Drawings
FIG. 1 is a schematic diagram of the right-hand view structure of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
Fig. 2 is a schematic diagram of the front view structure of the sub-vacuum low temperature plasma on-line continuous material processing apparatus.
FIG. 3 is a schematic top view of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
Fig. 4 is a schematic left-hand view of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
Fig. 5 is a schematic perspective view of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
Fig. 6 is a schematic perspective view of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
FIG. 7 is a schematic diagram of the internal structure of a sub-vacuum low temperature plasma on-line continuous material processing apparatus.
Detailed Description
In order to further clarify the technical scheme and working principle of the present invention, the present invention will be described in detail with reference to the drawings and the specific embodiments.
The device for processing the sub-vacuum low-temperature plasma online continuous material comprises an unreeling mechanism 1, sub-vacuum low-temperature plasma material processing equipment 2, a reeling mechanism 4, a foundation pin 5, a differential feed dielectric barrier discharge low-temperature plasma power supply, a vacuumizing device, an atmosphere control system, an electrical control system, a cooling system and other components.
The unreeling mechanism 1 and the reeling mechanism 4 are respectively arranged at the left side and the right side of the sub-vacuum low-temperature plasma material processing equipment 2, the positions corresponding to the feed inlet and the discharge outlet of the sub-vacuum low-temperature plasma material processing equipment 2 are provided with a reel and an adjusting knob, and the tightness of the reel is adjusted through the adjusting knob according to the types of the linear materials during operation, so that the linear materials are prevented from being broken in the unreeling and reeling processes. The winding mechanism 4 is driven by a motor to rotate, and meanwhile, the guide rail of the winding wire swings left and right, and when the processed linear material is wound on the winding disc through the godet wheel, the guide rail of the winding wire swings left and right to enable the linear material to be uniformly wound on the winding disc.
As shown in fig. 7, the sub-vacuum low-temperature plasma material processing apparatus 2 includes two main cavities 16 and two secondary vacuum buffer cavities 19, the two main cavities 16 are located in the middle, and the two secondary vacuum buffer cavities 19 are symmetrically disposed at two sides of the two main cavities 16. The space between the main cavity 16 and the buffer cavity 19 is closed by a partition board, a through hole for allowing an electrode group and a linear material to pass through is arranged in the middle of the partition board, the electrode group transversely penetrates through the two main cavities 16 and the secondary vacuum buffer cavity 19, and the linear material passes through a discharge gap of the electrode group.
In this embodiment, the sub-vacuum low-temperature plasma material processing apparatus 2 preferably adopts a control method of the working voltage of the counter electrode by using a differential feeding dielectric barrier discharge low-temperature plasma apparatus (e.g. a differential feeding dielectric barrier discharge low-temperature plasma device disclosed in patent document CN 200720035097.5), that is, adopts a differential power supply as an excitation power supply of plasma. The dielectric barrier structure electrode group arranged in the sub-vacuum low-temperature plasma material processing equipment 2 comprises a positive high-voltage electrode group and a negative high-voltage electrode group, and the discharge gap is a gap between the positive high-voltage electrode group and the negative high-voltage electrode group, and materials pass through the middle of the two electrode groups. The positive high-voltage electrode group comprises more than one positive high-voltage electrode, the negative high-voltage electrode group is provided with a corresponding number of negative high-voltage electrodes, the positive high-voltage electrodes are connected with the positive high-voltage output end of the differential plasma excitation power supply, the negative high-voltage electrodes are connected with the negative high-voltage output end of the differential plasma excitation power supply, and the magnitudes (basically) of output signals of the positive high-voltage output end and the negative high-voltage output end are equal and opposite in phase. The positive phase high voltage electrode and/or the negative phase high voltage electrode adopts an electrode with a metal hollow tube 17 arranged inside and a corundum, quartz or ceramic blocking medium covered outside.
The atmosphere control system consists of an atmosphere cylinder 11, an air inlet pipeline provided with an atmosphere control valve 10 and a flowmeter, and is provided with a plurality of groups of atmosphere cylinders, and after being connected into a secondary vacuum buffer cavity, the atmosphere control system can be used for mixing multiple atmospheres. The vacuum pumping equipment comprises a vacuum pump 7 and an exhaust pipeline provided with a vacuum control valve 6, wherein the air outlet of each main cavity 16 is connected with the exhaust pipeline through a sub-vacuum air extraction flange 20, and a secondary vacuum buffer cavity 19 is connected with the exhaust pipeline through a secondary buffer vacuum air extraction flange 14. The secondary buffer vacuum pumping flange 14 is arranged at one end of the outer side of the secondary vacuum buffer cavity 19, the secondary buffer vacuum pumping flange 14 is respectively provided with an atmosphere inlet 8, and the atmosphere inlet 8 is connected with the atmosphere gas cylinder 11 through the gas inlet pipeline.
The cooling system comprises a part for cooling the inside of the electrode, and the vacuum pump 7 is used for evacuating the main cavity 16 and the secondary vacuum buffer cavity 19. The cooling inside the electrode is realized through the vortex fan 9, the vortex fan 9 is connected with a metal hollow tube 17 inside the electrode, and an air source is continuously introduced into the electrode, so that the temperature inside the electrode is kept stable when the temperature reaches a certain degree. In this embodiment, the cooling of the main cavity 16, the secondary vacuum buffer cavity 19 and the outside of the electrode is achieved by the vacuum pump 7, so that no additional mechanism is added. The bottom of the sub-vacuum low-temperature plasma material processing equipment 2 is provided with a vacuum pump pumping and vacuum breaking port.
The electrical control system comprises a control touch screen 3 arranged above the sub-vacuum low-temperature plasma material processing equipment 2 and used as an interface for realizing man-machine interaction.
In the device of the invention, the vacuum range of the main cavity 16 is 99900-10 Pa, so that the bottleneck that the glow discharge can be realized only when the vacuum degree is below the kilopascal level is broken. Based on the above embodiment, more stages of vacuum extraction may be provided, i.e., the buffer chambers may be provided in more stages, for example, three stages, four stages, etc. of buffer chambers are sequentially provided outside (i.e., the feeding and discharging directions) the two-stage vacuum buffer chambers 19, so as to ensure that plasma discharge environments under different vacuum requirements are achieved. The separator can be used for isolating adjacent buffer cavities, and through holes are formed in the separator, so that the electrode group penetrates through the main cavity and all the buffer cavities. Because the device is used for continuously processing the linear material, when the linear material enters the sub-vacuum low-temperature plasma material processing equipment 2 and passes through the equipment 2, the outside atmosphere and the buffer cavity, the buffer cavity and the middle of the main cavity are not communicated with gas, the buffer cavity can be used as a vacuum degree protection barrier of the main cavity, the vacuum pump 7 continuously works to stably maintain the required sub-vacuum environment, namely, the vacuum degree of the buffer cavity is lower than that of the main cavity 16, and in general, the vacuum degree of each buffer cavity gradually decreases towards the directions of the feed inlet and the discharge outlet of the sub-vacuum low-temperature plasma material processing equipment 2.
In order to reduce the communication between the secondary vacuum buffer chamber 19 and the external atmosphere, and between the main chamber 16 and the secondary vacuum buffer chamber 19, the through holes on the partition board are designed as small as possible, so that the electrode group abuts against the inner wall of the through holes, and the discharge gap can be controlled to be between 1 and 300mm generally.
The device of the embodiment is simple and convenient to operate, strong in controllability, uniform in plasma generated in a sub-vacuum state and good in treatment effect.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the foregoing embodiments, which have been described in the foregoing embodiments and description merely illustrates the principles of the invention, and various changes and modifications may be made therein without departing from the spirit and scope of the invention, the scope of which is defined in the appended claims, specification and their equivalents.

Claims (6)

1. The utility model provides a sub-vacuum low temperature plasma on-line continuous material processing apparatus, includes unreeling mechanism (1), sub-vacuum low temperature plasma material processing equipment (2) and winding mechanism (4), its characterized in that:
The sub-vacuum low-temperature plasma material treatment equipment (2) comprises more than one main cavity (16) and a multi-stage vacuum buffer cavity (19), wherein the main cavity (16) is positioned in the middle, the buffer cavities (19) at all stages are symmetrically distributed on two sides of the main cavity (16) and are sequentially distributed along the trend of required treatment materials, the space between the main cavity (16) and the buffer cavities (19) or between adjacent buffer cavities (19) is sealed by a partition plate, the middle part of the partition plate is provided with a through hole for passing through a dielectric barrier structure electrode group and the materials, the electrode group of the sub-vacuum low-temperature plasma material treatment equipment (2) penetrates through the main cavity (16) and each buffer cavity (19), the materials pass through a discharge gap of the electrode group, and the vacuum range of the main cavity (16) is 99900-10 Pa.
2. A sub-vacuum low temperature plasma on-line continuous material processing apparatus according to claim 1, wherein the outer surface of the electrode group is abutted against the inside of the through hole, and the discharge gap is controlled to be between 1 and 300 mm.
3. The device for processing the online continuous material of the sub-vacuum low-temperature plasma according to claim 1, wherein the electrode group comprises a positive phase high-voltage electrode group and a negative phase high-voltage electrode group, the positive phase high-voltage electrode group comprises more than one positive phase high-voltage electrode, the negative phase high-voltage electrode group comprises more than one negative phase high-voltage electrode, the positive phase high-voltage electrode is connected with a positive phase high-voltage output end of a plasma excitation power supply, and the negative phase high-voltage electrode is connected with a negative phase high-voltage output end of the plasma excitation power supply.
4. A sub-vacuum low-temperature plasma online continuous material processing device according to claim 3, wherein the plasma excitation power supply is a differential power supply, and the output amplitude of the positive phase high-voltage output end and the output amplitude of the negative phase high-voltage output end are equal and opposite.
5. The sub-vacuum low-temperature plasma online continuous material processing device according to claim 1, wherein one end of the outer side of each of the two outermost buffer cavities (19) is provided with an atmosphere inlet (8), and the atmosphere inlets (8) are connected with an atmosphere gas cylinder (11).
6. The device for on-line continuous material processing of sub-vacuum low-temperature plasma according to any one of claims 1 to 5, wherein the electrode group is an electrode with a metal hollow tube inside and a corundum, quartz or ceramic blocking medium covered outside, and the metal hollow tube is connected with a fan for ventilation and cooling.
CN201811310125.9A 2018-11-06 2018-11-06 Sub-vacuum low-temperature plasma on-line continuous material processing device Active CN110139457B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811310125.9A CN110139457B (en) 2018-11-06 2018-11-06 Sub-vacuum low-temperature plasma on-line continuous material processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811310125.9A CN110139457B (en) 2018-11-06 2018-11-06 Sub-vacuum low-temperature plasma on-line continuous material processing device

Publications (2)

Publication Number Publication Date
CN110139457A CN110139457A (en) 2019-08-16
CN110139457B true CN110139457B (en) 2024-05-24

Family

ID=67568331

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811310125.9A Active CN110139457B (en) 2018-11-06 2018-11-06 Sub-vacuum low-temperature plasma on-line continuous material processing device

Country Status (1)

Country Link
CN (1) CN110139457B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110611986A (en) * 2019-09-16 2019-12-24 南京珀斯佩特电子科技有限公司 Low-temperature plasma flat plate type reciprocating intelligent processing equipment and use method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2080611A (en) * 1980-06-21 1982-02-03 Shinetsu Chemical Co An apparatus for continuous treatment of a continuous-length material with low temperature plasma
CN202099616U (en) * 2011-05-06 2012-01-04 宁波表面工程研究中心 Film and fiber surface plasma continuous processing device
CN102390069A (en) * 2011-10-28 2012-03-28 南京林业大学 Atmospheric-pressure and low-temperature plasma continuous treatment device of wooden thin plates
CN102505447A (en) * 2011-09-27 2012-06-20 东华大学 Device and method for continuously processing fiber surface by atmospheric low temperature radio frequency plasma
CN103052251A (en) * 2012-12-07 2013-04-17 常州中科常泰等离子体科技有限公司 Cold plasma glow discharge generator under low vacuum state
CN104768316A (en) * 2015-04-21 2015-07-08 南京苏曼等离子科技有限公司 Large-discharge-interval normal temperature glow discharge low-temperature plasma material processing device
CN209593870U (en) * 2018-11-06 2019-11-05 南京苏曼等离子科技有限公司 Sub- vacuum low-temperature plasma on-line continuous material handling device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090297409A1 (en) * 2008-05-30 2009-12-03 Buchanan Walter R Discharge plasma reactor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2080611A (en) * 1980-06-21 1982-02-03 Shinetsu Chemical Co An apparatus for continuous treatment of a continuous-length material with low temperature plasma
CN202099616U (en) * 2011-05-06 2012-01-04 宁波表面工程研究中心 Film and fiber surface plasma continuous processing device
CN102505447A (en) * 2011-09-27 2012-06-20 东华大学 Device and method for continuously processing fiber surface by atmospheric low temperature radio frequency plasma
CN102390069A (en) * 2011-10-28 2012-03-28 南京林业大学 Atmospheric-pressure and low-temperature plasma continuous treatment device of wooden thin plates
CN103052251A (en) * 2012-12-07 2013-04-17 常州中科常泰等离子体科技有限公司 Cold plasma glow discharge generator under low vacuum state
CN104768316A (en) * 2015-04-21 2015-07-08 南京苏曼等离子科技有限公司 Large-discharge-interval normal temperature glow discharge low-temperature plasma material processing device
CN209593870U (en) * 2018-11-06 2019-11-05 南京苏曼等离子科技有限公司 Sub- vacuum low-temperature plasma on-line continuous material handling device

Also Published As

Publication number Publication date
CN110139457A (en) 2019-08-16

Similar Documents

Publication Publication Date Title
US6416633B1 (en) Resonant excitation method and apparatus for generating plasmas
EP1383359A2 (en) Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
EP2180768A1 (en) Apparatus and method for treating an object
CN102026468A (en) Dielectric barrier corona discharge reactor
US20110192348A1 (en) RF Hollow Cathode Plasma Generator
CN105903321A (en) Low-energy-consumption low-temperature plasma gas reaction device
WO2007115309A2 (en) Apparatus and method for treating a workpiece with ionizing gas plasma
US20200383197A1 (en) Atmospheric pressure linear rf plasma source for surface modification and treatment
CN110139457B (en) Sub-vacuum low-temperature plasma on-line continuous material processing device
JP6122383B2 (en) Apparatus and method for the treatment of gaseous media and use of the apparatus for the treatment of gaseous media, liquids, solids, surfaces or any combination thereof
CN102883515A (en) Array device of atmospheric pressure flat dielectric barrier plasma jet discharge
KR101664541B1 (en) Low temperature atmospheric pressure plasma jet device
CN109168243B (en) Normal temperature and pressure plasma plate, film sheet or micro material treatment equipment
CN105050304A (en) U-shaped plate type dielectric-barrier-discharge-based low-temperature plasma reactor and reactive system
EP3163983A1 (en) Apparatus for indirect atmospheric pressure plasma processing
CN209593870U (en) Sub- vacuum low-temperature plasma on-line continuous material handling device
CN113101389A (en) A kind of plasma sterilization device, preparation method of sterilization gas and sterilization method
CN1220409C (en) An active gas generating method and apparatus thereof
KR100420129B1 (en) Plasma surface treatment apparatus using multiple electrodes array
CN103922457B (en) Plasma discharging device
CN110708851A (en) Large-gap uniform dielectric barrier discharge plasma surface treatment device under atmospheric pressure
CN215163116U (en) Device for modifying metal surface
CN109587921A (en) A kind of plasma jet generating device coupling high energy electron
KR101692218B1 (en) Dielectric barrier plasma generation device for removing volatile organic compounds and method for removing them using same
JP4772215B2 (en) Atmospheric pressure plasma processing equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant