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CN110137230B - OLED display panel and manufacturing method thereof - Google Patents

OLED display panel and manufacturing method thereof Download PDF

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Publication number
CN110137230B
CN110137230B CN201910421446.4A CN201910421446A CN110137230B CN 110137230 B CN110137230 B CN 110137230B CN 201910421446 A CN201910421446 A CN 201910421446A CN 110137230 B CN110137230 B CN 110137230B
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CN110137230A (en
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史婷
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

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Abstract

The invention discloses an OLED display panel and a manufacturing method thereof. The OLED display panel includes: a TFT substrate; an electrode layer on the TFT substrate; a pixel defining layer on the TFT substrate and the electrode layer, the pixel defining layer forming a pixel opening on the electrode layer; a pixel thin film in the pixel opening; the film thickness of the central area of the pixel film is within a first preset range, and the contact height of the pixel film and at least two opposite side walls of the pixel opening is within a second preset range, so that the efficiency of the panel is effectively improved, and the service life of the panel is effectively prolonged.

Description

OLED display panel and manufacturing method thereof
Technical Field
The invention relates to the technical field of display panels, in particular to an OLED display panel and a manufacturing method thereof.
Background
Organic electroluminescent diodes (OLEDs) have become a new technology in the display field due to their advantages of high brightness, self-luminescence, fast response, and low driving voltage, but their wide-scale commercialization is limited due to the high preparation cost of vacuum thermal evaporation. The inkjet printing technology has the advantages of high material utilization rate and the like, is a key technology for solving the problem of large-size OLED display cost, and is to drop functional material ink into a predetermined pixel region by using a plurality of nozzles and obtain a required thin film through drying.
The thickness and the shape of the pixel film are very important for the OLED light-emitting characteristics, and especially in the solution processing process, the optimization of the thickness and the shape of the pixel film is very important. The film in the prior art has higher climbing in the pixel opening, which can cause a leakage current path to be generated in the device and reduce the service life of the device; the uniformity of the film is poor, which directly results in poor uniformity of light emission, and greatly reduces the efficiency and service life of the device.
Disclosure of Invention
The embodiment of the invention provides an OLED display panel and a manufacturing method thereof, and aims to solve the problems of low efficiency and short service life of the conventional OLED panel caused by the appearance of a pixel film.
An embodiment of the present invention provides an OLED display panel, including:
a TFT substrate;
an electrode layer on the TFT substrate;
a pixel defining layer on the TFT substrate and the electrode layer, the pixel defining layer forming a pixel opening on the electrode layer;
a pixel thin film in the pixel opening; the film thickness of the central area of the pixel film is within a first preset range, and the contact height of the pixel film and at least two opposite side walls of the pixel opening is within a second preset range.
Further, the central area of the pixel film is larger than 80% of the cross section of the pixel film, and the first preset range is TAve-10％～TAve+10%, the second preset range being TAve～1.2TAve(ii) a Wherein, TAveIs the average film thickness of the central area of the pixel thin film.
Further, the pixel thin film is prepared through an ink-jet printing process, and the film thickness of the pixel thin film is obtained through adjusting the drying temperature and the vacuum drying condition in the ink-jet printing process.
Further, a hole injection layer, a hole transport layer and a light emitting layer are sequentially arranged in the pixel opening, and the pixel film comprises at least one of the hole injection layer, the hole transport layer and the light emitting layer.
Further, if the pixel thin film comprises the hole injection layer, the average film thickness of the central area of the hole injection layer is 30-40 nm, the drying temperature for preparing the hole injection layer is 10 ℃, and the vacuum degree reaches 1.5pa within 140s under the vacuum drying condition.
Further, if the pixel thin film includes the hole transport layer, the average film thickness of the central region of the hole transport layer is 20nm, the drying temperature for preparing the hole injection layer is 25 ℃, and the vacuum degree reaches 1.5pa in 140s under vacuum drying conditions.
Further, if the pixel film comprises a light emitting layer, the light emitting layer comprises a red light emitting layer, a blue light emitting layer or a green light emitting layer, the average film thickness of the center region of the red light emitting layer and the center region of the green light emitting layer is 50-60 nm, the average film thickness of the center region of the blue light emitting layer is 40nm, the drying temperature for preparing the red light emitting layer is 25 ℃, the drying temperature for preparing the green light emitting layer is 55 ℃, the drying temperature for preparing the blue light emitting layer is 35 ℃, and the vacuum degree reaches 1.5pa in 80 s.
The embodiment of the invention also provides a manufacturing method of the OLED display panel, which comprises the following steps:
providing a TFT substrate;
forming an electrode layer on the TFT substrate;
forming a pixel defining layer on the TFT substrate and the electrode layer, and the pixel defining layer forming a pixel opening on the electrode layer;
forming a pixel thin film in the pixel opening; the film thickness of the central area of the pixel film is within a first preset range, and the contact height of the pixel film and at least two opposite side walls of the pixel opening is within a second preset range.
Further, the central area of the pixel film is larger than 80% of the cross section of the pixel film, and the first preset range is TAve-10％～TAve+10%, the second preset range being TAve～1.2TAve(ii) a Wherein, TAveIs the average film thickness of the central area of the pixel thin film.
Further, the forming of the pixel thin film in the pixel opening specifically includes:
and forming a pixel thin film with a required film thickness in the pixel opening by adjusting the drying temperature and the vacuum drying condition in the ink-jet printing process.
The invention has the beneficial effects that: the pixel thin film in the pixel opening is arranged, the film thickness of the central area of the pixel thin film is enabled to be located in a first preset range, uniformity of the pixel thin film is guaranteed, the contact height of the pixel thin film and at least two opposite side walls of the pixel opening is enabled to be located in a second preset range, a leakage current path generated inside a panel due to the fact that the contact height is too high is avoided, and therefore efficiency and service life of the panel are effectively improved.
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In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention;
fig. 2 is another schematic structural diagram of an OLED display panel according to an embodiment of the present invention;
fig. 3 is a schematic flow chart illustrating a manufacturing method of an OLED display panel according to an embodiment of the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
Fig. 1 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
The OLED display panel provided by the embodiment of the invention comprises a TFT substrate 11; an electrode layer 12 on the TFT substrate 11; a pixel defining layer 13 on the TFT substrate 11 and the electrode layer 12, and the pixel defining layer 13 forms a pixel opening 15 on the electrode layer 12; a pixel film 14 in the pixel opening.
Specifically, the electrode layer 12 may be a transparent conductive film (ITO), and the electrode layer 12 includes a plurality of electrodes arranged in an array, which may be anodes. The pixel defining layer 13 is disposed on the TFT substrate 11 and on a portion of the electrode layer 12, the pixel defining layer 13 has a plurality of pixel openings 15 arranged in an array, and the plurality of pixel openings 15 are disposed in one-to-one correspondence with the plurality of electrodes. The pixel opening 15 is provided with sub-pixels, which include, but are not limited to, a red sub-pixel, a blue sub-pixel, or a green sub-pixel. The sub-pixels in the pixel openings 15 include a pixel film 14, and the pixel film 14 has a predetermined film profile.
The preset film morphology is that the central area of the pixel film 14 is substantially uniformly arranged, and the thickness of the edge area of the pixel film 14 is within a certain range. As shown in fig. 1, the central region of the pixel film 14 refers to a partial pixel film region centered on the central point B of the pixel film 14, and the edge region of the pixel film 14 refers to a pixel film region from the central region to the sidewall of the pixel opening 15.
Specifically, the film thickness of the central region of the pixel thin film 14 is within a first preset range, and the contact height between the pixel thin film 14 and at least two opposite side walls of the pixel opening 15 is within a second preset range. As shown in fig. 1, the highest contact points of the pixel thin film 14 and the two opposite side walls of the pixel opening 15 are a1 and a2, respectively, and the contact heights of the pixel thin film 14 and the two opposite side walls of the pixel opening 15 are the film thicknesses at a1 and a 2. The thicknesses of the films at the positions A1 and A2 can be the same or different, and the thickness of the film at the center point B can be larger than the thicknesses of the films at the positions A1 and A2 or smaller than the thicknesses of the films at the positions A1 and A2. The film thicknesses at positions a1 and a2 are within a second predetermined range, and the contact heights of the pixel thin film 14 and the two other sidewalls (not shown) of the pixel opening 15 may also be within the second predetermined range.
In a specific embodiment, the central area of the pixel film 14 is greater than 80% of the cross section of the pixel film 14, and the first predetermined range is TAve-10％～TAve+10%, the second preset range being TAve～1.2TAve(ii) a Wherein, TAveIs the average film thickness of the central region of the pixel thin film 14.
It should be noted that the area of the cross section of the pixel thin film 14 is the area of the sub-pixel, and at least 80% of the pixel thin films are substantially uniformly disposed, that is, at least 80% of the film thickness of the pixel thin film is located at TAve-10％～TAve+10%, the contact height of the pixel film 14 and at least two opposite side walls of the pixel opening 15 is at TAve～1.2TAveIn the meantime.
Further, as shown in fig. 2, the sub-pixel in the pixel opening 15 includes a Hole Injection Layer (HIL)16, a Hole Transport Layer (HTL)17, an emission layer (EML)18, and the like, which are sequentially provided on the electrode layer 12. The light emitting layer in the red sub-pixel is a red light emitting layer, the light emitting layer in the blue sub-pixel is a blue light emitting layer, and the light emitting layer in the green sub-pixel is a green light emitting layer. The pixel film 14 includes at least one of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18, that is, at least one functional layer of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18 has the film morphology of the pixel film.
Further, the pixel thin film 14 is prepared by an inkjet printing process, and the film thickness of the pixel thin film 14 is obtained by adjusting the drying temperature and the vacuum drying condition in the inkjet printing process. Average film thickness T of central region required for different filmsAveThe drying temperature and vacuum drying conditions for preparing the film are different. The average film thickness T of the central regions of the hole injection layer 16, the hole transport layer 17 and the light-emitting layer 18AveAnd the process conditions are shown in table 1.
Figure BDA0002066128510000051
TABLE 1
Wherein, the temperature value in the process condition is a drying temperature value, the slow pumping means that the vacuum degree can reach 1.5pa in 140s, and the fast pumping means that the vacuum degree can reach 1.5pa in 80 s.
Specifically, if the pixel thin film includes the hole injection layer 16, the average film thickness of the central region of the hole injection layer 16 is 30 to 40nm, the drying temperature for preparing the hole injection layer 16 is 10 ℃, and the vacuum degree reaches 1.5pa in 140s under vacuum drying conditions.
If the pixel thin film includes the hole transport layer 17, the average film thickness of the central region of the hole transport layer 17 is 20nm, the drying temperature for preparing the hole injection layer 17 is 25 ℃, and the vacuum degree reaches 1.5pa in 140s under vacuum drying conditions.
If the pixel film comprises the light-emitting layer 18, the light-emitting layer comprises a red light-emitting layer, a blue light-emitting layer or a green light-emitting layer, the average film thickness of the central area of the red light-emitting layer and the central area of the green light-emitting layer is 50-60 nm, the average film thickness of the central area of the blue light-emitting layer is 40nm, the drying temperature for preparing the red light-emitting layer is 25 ℃, the drying temperature for preparing the green light-emitting layer is 55 ℃, the drying temperature for preparing the blue light-emitting layer is 35 ℃, and the vacuum degree reaches 1.5pa in 80 s.
By adjusting the drying temperature and the vacuum drying condition of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18, a thin film with good corresponding uniformity is obtained, and the contact height of the thin film and the side wall of the pixel opening is reduced. In addition, the thickness of the film can also be adjusted by adjusting the viscosity, surface tension, and the like of the ink in the inkjet printing process.
Now, the performance change before and after the adjustment of the process conditions is described by taking a red organic electroluminescent device as an example, as shown in table 2, before the adjustment of the process conditions, the photochromic of the device is (0.66,0.34), the current efficiency is 100%, and the lifetime of the device is 100%. Through the adjustment of the process conditions, the appearance and the thickness of the thin film in the device are improved, the efficiency of the device is improved by a small margin (5 percent), and the service life of the device is greatly improved (69 percent), so that the efficiency and the service life of the OLED display panel are effectively improved.
Figure BDA0002066128510000061
TABLE 2
Therefore, the OLED display panel provided in this embodiment can set the pixel thin film in the pixel opening, so that the film thickness of the central area of the pixel thin film is within a first preset range, so as to ensure the uniformity of the pixel thin film, and the contact heights of the pixel thin film and at least two opposite side walls of the pixel opening are within a second preset range, so as to avoid generating a leakage current path inside the panel due to the excessively high contact heights, thereby effectively improving the device efficiency and prolonging the device life.
Fig. 3 is a schematic flow chart of a method for manufacturing an OLED display panel according to an embodiment of the present invention.
The method for manufacturing the OLED display panel provided in this embodiment includes:
101. a TFT substrate is provided.
102. And forming an electrode layer on the TFT substrate.
In this embodiment, as shown in fig. 1, the electrode layer 12 may be a transparent conductive film (ITO), and the electrode layer 12 includes a plurality of electrodes arranged in an array, and the electrode may be an anode.
103. A pixel defining layer is formed on the TFT substrate and the electrode layer, and the pixel defining layer forms a pixel opening on the electrode layer.
In this embodiment, as shown in fig. 1, the pixel defining layer 13 is located on the TFT substrate 11 and on a portion of the electrode layer 12, the pixel defining layer 13 has a plurality of pixel openings 15 arranged in an array, and the plurality of pixel openings 15 and the plurality of electrodes are arranged in a one-to-one correspondence.
104. Forming a pixel thin film in the pixel opening; the film thickness of the central area of the pixel film is within a first preset range, and the contact height of the pixel film and at least two opposite side walls of the pixel opening is within a second preset range.
In this embodiment, the pixel opening 15 has a sub-pixel disposed therein, and the sub-pixel includes, but is not limited to, a red sub-pixel, a blue sub-pixel, or a green sub-pixel. The sub-pixels in the pixel openings 15 include a pixel film 14, and the pixel film 14 has a predetermined film profile. The preset film morphology is that the central area of the pixel film 14 is substantially uniformly arranged, and the thickness of the edge area of the pixel film 14 is within a certain range. As shown in fig. 1, the central region of the pixel film 14 refers to a partial pixel film region centered on the central point B of the pixel film 14, and the edge region of the pixel film 14 refers to a pixel film region from the central region to the sidewall of the pixel opening 15.
Specifically, the film thickness of the central region of the pixel thin film 14 is within a first preset range, and the contact height between the pixel thin film 14 and at least two opposite side walls of the pixel opening 15 is within a second preset range. As shown in fig. 1, the highest contact points of the pixel thin film 14 and the two opposite side walls of the pixel opening 15 are a1 and a2, respectively, and the contact heights of the pixel thin film 14 and the two opposite side walls of the pixel opening 15 are the film thicknesses at a1 and a 2. The thicknesses of the films at the positions A1 and A2 can be the same or different, and the thickness of the film at the center point B can be larger than the thicknesses of the films at the positions A1 and A2 or smaller than the thicknesses of the films at the positions A1 and A2. The film thicknesses at positions a1 and a2 are within a second predetermined range, and the contact heights of the pixel thin film 14 and the two other sidewalls (not shown) of the pixel opening 15 may also be within the second predetermined range.
In a specific embodiment, the central area of the pixel film 14 is greater than 80% of the cross section of the pixel film 14, and the first predetermined range is TAve-10％～TAve+10%, the second preset range being TAve～1.2TAve(ii) a Wherein, TAveIs the average film thickness of the central region of the pixel thin film 14.
It should be noted that the area of the cross section of the pixel thin film 14 is the area of the sub-pixel, and at least 80% of the pixel thin films are substantially uniformly disposed, that is, at least 80% of the film thickness of the pixel thin film is located at TAve-10％～TAve+10%, the contact height of the pixel film 14 and at least two opposite side walls of the pixel opening 15 is at TAve～1.2TAveIn the meantime.
Specifically, step 104 includes:
and forming a pixel thin film with a required film thickness in the pixel opening by adjusting the drying temperature and the vacuum drying condition in the ink-jet printing process.
In this embodiment, the pixel thin film 14 includes at least one of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18, that is, at least one functional layer of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18 has the film morphology of the pixel thin film. Average film thickness T of central region required for different filmsAveThe drying temperature and vacuum drying conditions for preparing the film are different.
By adjusting the drying temperature and the vacuum drying condition of the hole injection layer 16, the hole transport layer 17 and the light emitting layer 18, a thin film with good corresponding uniformity is obtained, and the contact height of the thin film and the side wall of the pixel opening is reduced. In addition, the thickness of the film can also be adjusted by adjusting the viscosity, surface tension, and the like of the ink in the inkjet printing process.
As can be seen from the above, the method for manufacturing an OLED display panel provided in this embodiment can set the pixel thin film in the pixel opening, so that the film thickness of the central region of the pixel thin film is within a first preset range, so as to ensure the uniformity of the pixel thin film, and the contact heights of the pixel thin film and at least two opposite sidewalls of the pixel opening are within a second preset range, so as to avoid generating a leakage current path inside the panel due to an excessively high contact height, thereby effectively improving the device efficiency and prolonging the device life.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.

Claims (9)

1. An OLED display panel, comprising:
a TFT substrate;
an electrode layer on the TFT substrate;
a pixel defining layer on the TFT substrate and the electrode layer, the pixel defining layer forming a pixel opening on the electrode layer;
a pixel thin film in the pixel opening; the film thickness of the central area of the pixel thin film is within a first preset range, and the contact height of the pixel thin film and at least two opposite side walls of the pixel opening is within a second preset range; the first preset range is TAve-10%~ TAve+10%, the second preset range being TAve~1.2TAve(ii) a Wherein, TAveThe average film thickness of the central area of the pixel thin film is obtained;
if the pixel thin film comprises a hole injection layer, the average film thickness of the central area of the hole injection layer is 30-40 nm, the drying temperature for preparing the hole injection layer is 10 ℃, and the vacuum degree reaches 1.5pa within 140s under the vacuum drying condition.
2. The OLED display panel of claim 1, wherein the central area of the pixel film is greater than 80% of the cross-section of the pixel film.
3. The OLED display panel according to claim 2, wherein the pixel thin film is prepared by an inkjet printing process, and the film thickness of the pixel thin film is obtained by adjusting a drying temperature and a vacuum drying condition in the inkjet printing process.
4. The OLED display panel of claim 3, wherein a hole injection layer, a hole transport layer and a light emitting layer are sequentially disposed in the pixel opening, and the pixel thin film further comprises at least one of the hole transport layer and the light emitting layer.
5. The OLED display panel according to claim 4, wherein if the pixel thin film comprises the hole transport layer, the average film thickness of the central region of the hole transport layer is 20nm, the drying temperature for preparing the hole injection layer is 25 ℃, and the vacuum degree reaches 1.5pa in 140s under vacuum drying conditions.
6. The OLED display panel according to claim 4, wherein if the pixel thin film includes a light emitting layer including a red light emitting layer, a blue light emitting layer or a green light emitting layer, an average film thickness of a central region of the red light emitting layer and the green light emitting layer is 50 to 60nm, an average film thickness of a central region of the blue light emitting layer is 40nm, a drying temperature for preparing the red light emitting layer is 25 ℃, a drying temperature for preparing the green light emitting layer is 55 ℃, a drying temperature for preparing the blue light emitting layer is 35 ℃, and a vacuum degree of the red light emitting layer, the blue light emitting layer and the green light emitting layer reaches 1.5pa in 80 s.
7. A manufacturing method of an OLED display panel is characterized by comprising the following steps:
providing a TFT substrate;
forming an electrode layer on the TFT substrate;
forming a pixel defining layer on the TFT substrate and the electrode layer, and the pixel defining layer forming a pixel opening on the electrode layer;
forming a pixel thin film in the pixel opening; the film thickness of the central area of the pixel thin film is within a first preset range, and the contact height of the pixel thin film and at least two opposite side walls of the pixel opening is within a second preset range; the first preset range is TAve-10%~ TAve+10%, the second preset range being TAve~1.2TAve(ii) a Wherein, TAveThe average film thickness of the central area of the pixel thin film is obtained; if the pixel thin film comprises a hole injection layer, the average film thickness of the central area of the hole injection layer is 30-40 nm, the drying temperature for preparing the hole injection layer is 10 ℃, and the vacuum degree reaches 1.5pa within 140s under the vacuum drying condition.
8. The method of claim 7, wherein a central area of the pixel film is greater than 80% of a cross-section of the pixel film, and the first predetermined range is TAve-10%~ TAve+10%, the second preset range being TAve~1.2TAve(ii) a Wherein, TAveIs the average film thickness of the central area of the pixel thin film.
9. The method for manufacturing the OLED display panel according to claim 8, wherein the forming of the pixel thin film in the pixel opening specifically includes:
and forming a pixel thin film with a required film thickness in the pixel opening by adjusting the drying temperature and the vacuum drying condition in the ink-jet printing process.
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