CN110112894B - Power switch device drive circuit and power electronic equipment - Google Patents
Power switch device drive circuit and power electronic equipment Download PDFInfo
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- CN110112894B CN110112894B CN201910446502.XA CN201910446502A CN110112894B CN 110112894 B CN110112894 B CN 110112894B CN 201910446502 A CN201910446502 A CN 201910446502A CN 110112894 B CN110112894 B CN 110112894B
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- 238000002955 isolation Methods 0.000 claims abstract description 67
- 238000005070 sampling Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 230000004224 protection Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 238000004804 winding Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
The embodiment of the invention provides a power switch device driving circuit and power electronic equipment, wherein the power switch device driving circuit comprises a control circuit and a driving chip, and the power switch device driving circuit comprises the following components: the control circuit is used for generating a control signal, and the driving chip is integrated with a first isolation unit and a second isolation unit; wherein: the first isolation unit generates a driving signal according to the control signal received by the first primary side sub-circuit from the control circuit and outputs the driving signal to the control end of the power switching device through the first secondary side sub-circuit; the second isolation unit generates a feedback signal according to a feedback level received by the second primary side sub-circuit from the power switch device and outputs the feedback signal to the control circuit through the second secondary side sub-circuit. According to the embodiment of the invention, the power switch device is directly driven by the driving power supply, so that an isolation transmission circuit is omitted, the cost of the whole driving circuit can be effectively reduced, and the area is reduced.
Description
Technical Field
The embodiment of the invention relates to the field of power switching devices, in particular to a power switching device driving circuit and power electronic equipment.
Background
With the development of social industrialization, high-power switching devices, such as IGBTs (Insulated Gate Bipolar Transistor, insulated gate bipolar transistors), siC-MOSFETs (silicon carbide field effect transistors), and the like, have been widely used because of their advantages of high operating frequency, small switching loss, large element containers, and the like.
As shown in fig. 1, a drive control section of a present high-power switching device mainly includes a drive power supply 1 and a drive circuit 2. Wherein the drive power supply 1 realizes the isolated transmission of electric energy, the output of the drive power supply takes the output end (such as the emitter of IGBT) of the high-power switching device 3 as the level of the reference ground, and simultaneously supplies the energy required by driving the high-power switching device 3; the driving circuit 2 realizes isolation transmission of control signals, and the control signals sent from a controller such as an MCU (Microcontroller Unit, micro control unit), a DSP (DIGITAL SIGNAL Processing, digital signal processor) and the like are transmitted to a driving side of a control electrode (for example, a gate electrode of an IGBT) of the high-power switching device by means of magnetic isolation, optical isolation and the like.
Furthermore, in order to achieve protection of the power switching device, the driving circuit 2 often includes a driving chip 21 and a control circuit 22, and protection of the power switching device 3 is achieved by the driving chip 21. As shown in fig. 2, two isolation circuits, namely a protection signal isolation circuit 211 and a driving signal isolation circuit 212 are generally disposed in the driving chip 21, wherein the protection signal isolation circuit 211 realizes the transmission between the low voltage side and the high voltage side of the control end monitoring signal, desat (Desaturation ) protection signal, error feedback signal and other protection signals of the power switch device 3; the drive signal isolation circuit 212 enables the transfer of drive signals from the control circuit 22 from the low voltage side to the high voltage side (i.e. the controller side of the power switching device 3). The driving signal output of the driving chip 2 is generally connected with a push-pull circuit to amplify the driving signal capability, and the energy for driving the switching action of the power switching device is from the driving power supply 1.
However, in the drive control circuit of the power switching device described above, since the drive control circuit includes three isolation circuits of the drive power supply 1, the protection signal isolation circuit 211, and the drive signal isolation circuit 212, the overall cost is high and the volume is large.
Disclosure of Invention
The embodiment of the invention provides a novel power switch device driving circuit and power electronic equipment aiming at the problems of high overall cost and large volume caused by the fact that the driving circuit of the power switch device comprises a driving power supply, a protection signal isolation circuit and a driving signal isolation circuit.
The technical scheme for solving the technical problems in the embodiment of the invention is that a power switch device driving circuit is provided, which is characterized by comprising a control circuit and a driving chip, wherein: the control circuit is used for generating a control signal, and the driving chip is integrated with a first isolation unit and a second isolation unit; wherein:
the first isolation unit comprises a first primary side sub-circuit and a first secondary side sub-circuit, generates a driving signal according to the control signal received by the first primary side sub-circuit from the control circuit, and outputs the driving signal to the control end of the power switching device through the first secondary side sub-circuit;
the second isolation unit comprises a second primary side sub-circuit and a second secondary side sub-circuit, and generates a feedback signal according to a feedback level received by the second primary side sub-circuit from the power switch device and outputs the feedback signal to the control circuit through the second secondary side sub-circuit.
Preferably, the control signal generated by the control circuit is a square wave signal, and the working frequency of the first isolation unit is more than 100 times of the frequency of the square wave signal.
Preferably, the first isolation unit comprises a transformer, the first primary side sub-circuit comprises a first switching tube and a second switching tube, the first switching tube and the second switching tube are connected in series between two connection terminals of a primary side coil of the transformer, a connection point of the first switching tube and the second switching tube is connected with a reference ground, and the first switching tube and the second switching tube are driven according to a control signal from the control circuit; the center tap of the primary coil of the transformer is connected to the power supply pin of the driver chip.
Preferably, the first switching transistor and the second switching transistor are respectively N-channel enhancement type metal-oxide semiconductor field effect transistors, wherein: the drain electrode of the first switching tube is connected to one connecting terminal of the primary coil of the transformer, the drain electrode of the second switching tube is connected to the other connecting terminal of the primary coil of the transformer, the source electrodes of the first switching tube and the second switching tube are respectively connected with a reference ground, and signals input to the grid electrodes of the first switching tube and the second switching tube are complementary.
Preferably, the first primary side sub-circuit comprises four third switching tubes, the four third switching tubes are connected into an H-bridge direct current chopper, and the four third switching tubes are driven according to control signals from the control circuit respectively.
Preferably, the first primary side sub-circuit comprises two fourth switching tubes, the two fourth switching tubes are connected into a half-bridge direct current chopper, and the two fourth switching tubes are driven according to control signals from the control circuit respectively.
Preferably, the first secondary side sub-circuit comprises a filter element, and converts the driving signal in the form of high-frequency pulses into the driving signal in the form of a square wave through the filter element; the first secondary side sub-circuit outputs a driving signal in the form of a square wave to the power switching device.
Preferably, the control signal generated by the control circuit is a high-frequency pulse wave, and the first isolation unit directly converts the high-frequency pulse wave into a driving signal having the same waveform as the high-frequency pulse wave.
Preferably, the power switching device driving circuit further comprises a sampling unit for sampling an output current of the power switching device, and the second primary side sub-circuit comprises a current feedback element and acquires a sampled current signal from the sampling unit through the current feedback element; the second isolation unit generates a feedback signal according to the sampled current signal and transmits the feedback signal to the control circuit through a second secondary sub-circuit, and the control circuit adjusts the duty ratio of the high-frequency pulse wave according to the feedback signal.
The embodiment of the invention also provides power electronic equipment, which comprises a power switch device and the power switch device driving circuit, wherein the output end of the power switch device driving circuit is connected to the control end of the power switch device.
According to the power switch device driving circuit and the power electronic equipment, the driving power supply and the driving signal isolation circuit are integrated into the first isolation unit of the driving chip, so that the cost of the whole driving circuit can be effectively reduced, and the area is reduced. In addition, the power switch device is driven in a high-frequency pulse mode, so that the transmission error rate of a driving signal can be reduced, and the size of the isolation transformer can be reduced.
The embodiment of the invention can also directly generate the control signal in the form of the pulse width modulation signal by the control circuit, thereby omitting a high-frequency control structure of a switching tube in a driving chip. In addition, the embodiment of the invention can flexibly adjust the voltage of the driving signal and the form of the driving signal according to the actual working condition of the power switch device, thereby reducing the switching loss of the power switch device.
Drawings
FIG. 1 is a schematic diagram of a prior art power switching device drive control scheme;
FIG. 2 is a schematic diagram of a drive circuit in a prior art power switching device drive control scheme;
FIG. 3 is a schematic diagram of a power switching device driving circuit according to an embodiment of the present invention;
Fig. 4 is a schematic waveform diagram of a control signal and a driving voltage in a driving circuit of a power switching device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a first isolation unit in a power switching device driving circuit according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a power switching device driving circuit according to another embodiment of the present invention;
fig. 7 is a schematic diagram of a power switching device driving circuit according to another embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 3, a schematic diagram of a power switching device driving circuit according to an embodiment of the present invention is provided, and the power switching device driving circuit may be applied to driving a power switching device (for example, IGBT, siC-MOSFET, etc.) in power electronic devices such as an inverter, a switching power supply, etc. The power switching device driving circuit of the present embodiment includes a control circuit 41, a driving chip 42.
The control circuit 41 may be specifically composed of a control chip (e.g., MCU, DSP, etc.) and peripheral circuits, and may generate control signals according to control instructions from an upper computer, feedback states of power switching transistors, or operation states of related devices. The control signal output terminal of the control circuit 41 is connected to the control signal input pin of the driving chip 42, and outputs the control signal generated thereby to the control signal input pin of the driving chip 42. The control signal is typically a square wave V con as shown in fig. 4.
The driving chip 42 has a driving signal output pin, and the driving signal output pin may be connected to a control terminal of the power switching device 3 (for example, a gate of an IGBT or a gate of a silicon carbide field effect transistor), and the driving chip 42 may generate a driving signal according to a signal of the control signal input pin (i.e., a control signal output by the control circuit 41) and output the driving signal to the control terminal of the power switching device 3, thereby implementing on-off control of the power switching device 3.
Specifically, the driving chip 42 is integrated with a first isolation unit 421 and a second isolation unit 422. The first isolation unit 421 includes a first primary side sub-circuit 4211 and a first secondary side sub-circuit 4212, wherein the first primary side sub-circuit 4211 is connected to a control signal input pin of the driving chip 42, the first secondary side sub-circuit 4212 is connected to a driving signal output pin of the driving chip 42, and the first isolation unit 421 generates a driving signal according to a control signal received by the first primary side sub-circuit 4211 from the control signal input pin, and outputs the driving signal to a control terminal of the power switching device 3 through the first secondary side sub-circuit 4212. The second isolation unit 422 includes a second primary side sub-circuit 4221 and a second secondary side sub-circuit 4222, wherein the second primary side sub-circuit 4221 is connected to the power switching device through a feedback voltage input pin of the driving chip 42, the second secondary side sub-circuit 4222 is connected to the control circuit 41 through a feedback signal output pin of the driving chip 42, and the second isolation unit 422 generates a feedback signal according to a feedback level received by the second primary side sub-circuit 4221 from the power switching device 3 and outputs the feedback signal to the control circuit 41 through the second secondary side sub-circuit 4222, thereby achieving various protections such as Desat protection, ASC protection (active short circuit protection) and the like of the power switching device. In practical applications, the second isolation unit 422 further obtains control signals such as an enable signal and a reset signal from the control circuit 41 to control the operation of the driving chip 42.
The power switch device driving circuit can effectively reduce the cost and area of the whole driving circuit by integrating the driving power supply and the driving signal isolation circuit into the first isolation unit 421 of the driving chip 42.
In particular, the control signal generated by the control circuit 41 is a square wave signal, and the operating frequency of the first isolation unit 421 in the driving chip 42 is much greater than the frequency of the control signal generated by the control circuit 41, for example, the operating frequency of the first isolation unit 421 is greater than 100 times the frequency of the control signal generated by the control circuit 41. In this way, the frequency of the driving signal generated by the first isolation unit 421 is much greater than the frequency of the control signal generated by the control circuit 41, as shown in fig. 4, the driving signal V dri is switched more frequently during the period that the control signal V con is at high level, so that even if the condition of wave loss during transmission exists, the influence on the final driving signal is small, and the transmission error rate of the driving signal is effectively reduced. In addition, the duty cycle of the driving signal can be adjusted according to the requirement, so that the purpose of optimizing the waveform of the driving signal of the power switch device 3 and reducing the switching loss of the power switch device 3 is achieved.
As shown in fig. 5, in one embodiment of the present invention, the first isolation unit 421 includes a transformer T, and the control signal from the control circuit 41 is connected to the primary winding of the transformer T via the first primary sub-circuit 4211, and the driving signal output pin of the driving chip 42 is connected to the secondary winding of the transformer T via the first secondary sub-circuit 4212. The input and output voltages of the first isolation unit 421 are determined by the transformation ratio of the primary and secondary windings of the transformer T, and can be controlled by an open loop.
Preferably, the first isolation unit 421 may include a push-pull circuit, that is, the first primary side sub-circuit 4211 includes a first switching tube Q1 and a second switching tube Q2, where the first switching tube Q1 and the second switching tube Q2 are connected in series between two connection terminals of a primary side coil of the transformer T, a connection point of the first switching tube Q1 and the second switching tube Q2 is connected to a reference ground, control ends of the first switching tube Q1 and the second switching tube Q2 are respectively connected to a control chip (a frequency of the control chip is an operating frequency of the first isolation unit 421), and the control chip implements on-off control of the first switching tube Q1 and the second switching tube Q2 according to a control signal. And, the power supply pin of the driving chip 42 is connected to the center tap of the primary winding of the transformer T. Since leakage inductance and copper resistance loss of the push-pull circuit are small, the operation efficiency of the first isolation unit 421 is high.
In particular, the first switching transistor Q1 and the second switching transistor Q2 in the first primary side sub-circuit 4211 may be N-channel enhancement type metal-oxide semiconductor field effect transistors, respectively, wherein: the drain electrode of the first switching tube Q1 is connected to one connecting terminal of the primary winding of the transformer T, the drain electrode of the second switching tube Q2 is connected to the other connecting terminal of the primary winding of the transformer T, the source electrodes of the first switching tube Q1 and the second switching tube Q2 are respectively connected with the reference ground, the grid electrodes of the first switching tube Q1 and the second switching tube A2 are respectively connected with the signal output end of the control chip, the levels of the grid electrodes of the input first switching tube Q1 and the second switching tube Q2 are complementary (namely, when the grid electrode of the first switching tube Q1 is at a low level, the grid electrode of the second switching tube Q2 is at a high level, and when the grid electrode of the first switching tube Q1 is at a high level, the grid electrode of the second switching tube Q2 is at a low level).
The first secondary sub-circuit 4212 may include a diode D s1, and a cathode of the diode D s1 is connected to one end of the secondary winding of the transformer T, and an anode is connected to the driving signal output pin of the driving chip 42. In addition, the first secondary side sub-circuit 4212 may further comprise a capacitor C s1 to absorb the spike in the driving signal, thereby improving the quality of the driving signal.
In another embodiment of the present invention, the first isolation circuit 421 may generate the driving signal by a full-bridge chopping method, that is, the first primary side sub-circuit 4211 includes four third switching tubes connected to form an H-bridge dc chopper, and control ends of the four third switching tubes are respectively connected to the control chip and are respectively driven by the control chip according to the control signal from the control circuit 41.
In addition, the first isolation circuit 421 may generate the driving signal by a half-bridge chopping method, that is, the first primary side sub-circuit 4211 includes two fourth switching tubes connected to form a half-bridge dc chopper, and control ends of the two fourth switching tubes are respectively connected to the control chip and are respectively driven by the control chip according to the control signal from the control circuit 41.
Fig. 6 is a schematic diagram of a driving circuit of a power switching device according to another embodiment of the present invention. As in the embodiment shown in fig. 3, the power switching device driving circuit of this embodiment also includes a control circuit 41 and a driving chip 42, in which a first isolation unit 421 and a second isolation unit 422 are integrated in the driving chip 42, and the first isolation unit 421 includes a first primary side sub-circuit 4211 and a first secondary side sub-circuit 4212. Also, the above-described first sub-circuit 4212 includes a filter element for converting a driving signal in the form of a high-frequency pulse into a driving signal in the form of a square wave, thereby making the power switching device driving circuit compatible with driving control of the power switching devices 3 of high frequency and low frequency.
Fig. 7 is a schematic diagram of a driving circuit of a power switching device according to still another embodiment of the present invention. The power switching device driving circuit of the present embodiment includes a control circuit 41 and a driving chip 42, a first isolation unit 421 and a second isolation unit 422 are integrated in the driving chip 42, and the second isolation unit 422 includes a second primary side sub-circuit 4221 and a second secondary side sub-circuit 4222.
Unlike the embodiments shown in fig. 3 and 6, the control circuit 41 has a high-frequency chopping function integrated therein, that is, the control signal generated by the control circuit 41 is a high-frequency pulse wave. At this time, the first isolation unit 421 of the driving chip 42 does not need to provide a switching tube and a control chip, and only needs to convert the high-frequency pulse wave into a driving signal having the same waveform as the input high-frequency pulse wave, so that compared with the embodiment of fig. 3, the control chip in the driving chip 42 can be omitted, and the calculation amount of the driving chip 42 can be reduced.
In addition, the power switching device driving circuit may further include a sampling unit for sampling the output current of the power switching device 3 (the sampling unit is independent of the driving chip 42), and accordingly, the second primary side sub-circuit 4221 includes a current feedback element and acquires a sampled current signal from the sampling unit through the current feedback element. The second isolation unit 422 converts the current signal obtained by the current feedback element into a feedback signal, and transmits the feedback signal to the control circuit 41 through the second secondary sub-circuit 4222, so that the control circuit 41 adjusts the duty ratio of the high-frequency pulse of the pulse width modulation signal according to the feedback signal, thereby realizing closed-loop control of the driving voltage, optimizing the driving voltage value, and realizing the effect of reducing the switching loss of the power switching device 3 according to the actual working condition.
The embodiment of the invention also provides power electronic equipment which can be an inverter, a switching power supply and the like in an electric automobile, and comprises a power switching device and the power switching device driving circuit, wherein a driving signal output pin of the power switching device driving circuit is connected to a control end of the power switching device.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910446502.XA CN110112894B (en) | 2019-05-27 | 2019-05-27 | Power switch device drive circuit and power electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910446502.XA CN110112894B (en) | 2019-05-27 | 2019-05-27 | Power switch device drive circuit and power electronic equipment |
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| CN110112894A CN110112894A (en) | 2019-08-09 |
| CN110112894B true CN110112894B (en) | 2024-11-26 |
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| CN201910446502.XA Active CN110112894B (en) | 2019-05-27 | 2019-05-27 | Power switch device drive circuit and power electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114256805A (en) * | 2021-12-20 | 2022-03-29 | 西安微电子技术研究所 | Highly integrated intelligent power distribution safety switch circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105939096A (en) * | 2015-03-06 | 2016-09-14 | 三垦电气株式会社 | Driving circuit for switching element |
| CN209805663U (en) * | 2019-05-27 | 2019-12-17 | 苏州汇川联合动力系统有限公司 | power switching device driving circuit and power electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449640B2 (en) * | 2004-08-10 | 2010-04-14 | 株式会社日立製作所 | Inverter device |
| JP5221268B2 (en) * | 2007-11-07 | 2013-06-26 | パナソニック株式会社 | Power switching element driving circuit, driving method thereof, and switching power supply device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105939096A (en) * | 2015-03-06 | 2016-09-14 | 三垦电气株式会社 | Driving circuit for switching element |
| CN209805663U (en) * | 2019-05-27 | 2019-12-17 | 苏州汇川联合动力系统有限公司 | power switching device driving circuit and power electronic equipment |
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