CN110099344B - MEMS structure - Google Patents
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- CN110099344B CN110099344B CN201910415702.9A CN201910415702A CN110099344B CN 110099344 B CN110099344 B CN 110099344B CN 201910415702 A CN201910415702 A CN 201910415702A CN 110099344 B CN110099344 B CN 110099344B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- Acoustics & Sound (AREA)
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Abstract
The present application provides a MEMS (microelectromechanical system) structure comprising: a substrate having a cavity disposed adjacent thereto and a first recess at a periphery of the cavity; and a piezoelectric composite vibration layer formed directly above the cavity and located in the middle of the first groove, wherein the substrate located at a portion between the first groove and the cavity supports the piezoelectric composite vibration layer, wherein a plurality of through holes penetrating the piezoelectric composite vibration layer are distributed on the entire surface of the piezoelectric composite vibration layer. The MEMS structure improves the displacement and deformation of the piezoelectric composite vibration layer under the action of sound pressure, reduces the residual stress, and further improves the sensitivity of the MEMS structure.
Description
Technical Field
The present application relates to the field of semiconductor technology, and in particular to a MEMS (Microelectro Mechanical Systems, i.e., microelectromechanical system) structure.
Background
MEMS microphones (microphones) mainly include both capacitive and piezoelectric. The MEMS piezoelectric microphone is a microphone prepared by using a micro-electromechanical system technology and a piezoelectric film technology, and has small size, small volume and good consistency due to the adoption of a semiconductor plane technology, bulk silicon processing and other technologies. Meanwhile, compared with a capacitor microphone, the MEMS piezoelectric microphone has the advantages of no need of bias voltage, large working temperature range, dust prevention, water prevention and the like, but has lower sensitivity, and restricts the development of the MEMS piezoelectric microphone. Among them, the large residual stress of the diaphragm is an important cause of low sensitivity.
Aiming at the problems of reducing the residual stress of the piezoelectric MEMS structure and improving the deformation of the vibrating membrane in the related art, no effective solution is proposed at present.
Disclosure of Invention
Aiming at the problem of larger residual stress in the related technology, the application provides an MEMS structure which can effectively reduce the residual stress.
The technical scheme of the application is realized as follows:
according to one aspect of the present application, there is provided a MEMS (microelectromechanical system) structure comprising:
a substrate having a cavity disposed adjacent thereto and a first recess at a periphery of the cavity;
and a piezoelectric composite vibration layer formed directly above the cavity and located in the middle of the first groove, wherein the substrate located at a portion between the first groove and the cavity supports the piezoelectric composite vibration layer, wherein a plurality of through holes penetrating the piezoelectric composite vibration layer are distributed on the entire surface of the piezoelectric composite vibration layer.
Wherein, the piezoelectricity compound vibration layer includes: a vibration supporting layer formed over the substrate; a first electrode layer formed over the vibration supporting layer; a first piezoelectric layer formed over the first electrode layer; and a second electrode layer formed over the first piezoelectric layer.
Wherein a dividing line constituted by connecting the plurality of through holes passes through a center point of the piezoelectric composite vibration layer, and divides the piezoelectric composite vibration layer into a plurality of regions.
Wherein the plurality of through holes on at least one of the dividing lines are arranged at equal intervals.
Wherein the shape of the plurality of through holes comprises a circle, an ellipse, a polygon and a petal shape.
Wherein the plurality of through holes continuously penetrate through the second electrode layer, the first piezoelectric layer, the first electrode layer, and the vibration supporting layer.
Wherein a second groove extends from an upper surface of the second electrode layer to a lower surface of the first electrode layer, and the plurality of through holes are formed in the second groove such that the plurality of through holes penetrate only the vibration supporting layer.
The first electrode layer and the second electrode layer are provided with at least two mutually isolated partitions, the mutually corresponding partitions of the first electrode layer and the second electrode layer form electrode layer pairs, and a plurality of electrode layer pairs are sequentially connected in series.
The vibration supporting layer comprises a single-layer or multi-layer composite film structure formed by silicon nitride, silicon oxide, monocrystalline silicon and polycrystalline silicon.
Wherein the vibration supporting layer comprises a piezoelectric material layer and electrode material layers positioned above and below the piezoelectric material layer, wherein the piezoelectric material layer comprises one or more layers of zinc oxide, aluminum nitride, an organic piezoelectric film, lead zirconate titanate (PZT) or a perovskite type piezoelectric film.
In the MEMS structure of the above embodiment, the piezoelectric composite vibration layer is formed directly above the cavity and is located in the middle of the first groove, so that a portion of the substrate material located between the first groove and the cavity supports the piezoelectric composite vibration layer, and further the piezoelectric composite vibration layer is converted from a solid state to a simple-support-like state, therefore, displacement and deformation of the piezoelectric composite vibration layer under the action of sound pressure are improved, residual stress is reduced, and further sensitivity of the MEMS structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
The various aspects of the present application may be better understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
FIG. 1 illustrates a cross-sectional view of a MEMS structure in accordance with some embodiments;
FIG. 2 illustrates a top view of a MEMS structure according to some embodiments;
FIGS. 3-9 illustrate cross-sectional views of intermediate stages in the fabrication of a MEMS structure, according to some embodiments;
FIG. 10 illustrates a flow chart of fabricating a MEMS structure, according to some embodiments.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application are within the scope of the protection of the present application.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. Specific examples of elements and arrangements will be described below to simplify the present application. These are, of course, merely examples and are not intended to be limiting. For example, the dimensions of the elements are not limited to the disclosed ranges or values, but may depend on the process conditions and/or the desired performance of the device. Furthermore, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which additional components may be formed between the first component and the second component, such that the first component and the second component may not be in direct contact. The various components may be arbitrarily drawn for simplicity and clarity.
Further, for ease of description, spatially relative terms such as "below", "lower", "above", "upper", and the like may be used herein to describe one element or component's relationship to another element(s) or component(s) as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, the term "made of" may mean "comprising" or "consisting of.
According to embodiments of the present application, a MEMS structure 100 is provided that can reduce low frequency acoustic leakage and improve microphone operation and manufacturing stability while reducing residual stress and improving diaphragm strain.
Referring to fig. 1, a MEMS structure 100 according to one embodiment of the present application is shown. The MEMS structure 100 will be described in detail below.
The MEMS structure 100 comprises a substrate 10, wherein the substrate 10 has a cavity 11 and a first recess 12 arranged adjacently, the first recess 12 being formed at the periphery of the cavity 11. The substrate 10 comprises silicon or any suitable silicon-based compound or derivative (e.g., silicon wafer, SOI, polysilicon on SiO 2/Si).
The piezoelectric composite vibration layer 20 is formed directly above the cavity 11 and is located in the middle of the first groove 12. And a plurality of through holes 25 penetrating the piezoelectric composite vibration layer 20 are distributed over the entire surface of the piezoelectric composite vibration layer 20.
In the MEMS structure 100 of the above embodiment, the piezoelectric composite vibration layer 20 is formed directly above the cavity 11 and is located in the middle of the first groove 12, so that a portion of the substrate material located between the first groove 12 and the cavity 11 supports the piezoelectric composite vibration layer 20, and further, the piezoelectric composite vibration layer 20 is converted from the solid state to the simple-support-like state, and therefore, the displacement and deformation of the piezoelectric composite vibration layer 20 under the action of sound pressure are improved, and further, the sensitivity of the MEMS structure 100 is improved.
In some embodiments, the piezoelectric composite vibration layer 20 includes a vibration support layer 24 formed over the substrate 10, a first electrode layer 21 formed over the vibration support layer 24, a first piezoelectric layer 22 formed over the first electrode layer 21, and a second electrode layer 23 formed over the first piezoelectric layer 22. The first piezoelectric layer 22 may convert the applied pressure into a voltage, and the first electrode layer 21 and the second electrode layer 23 may transmit the generated voltage to other integrated circuit devices.
In some embodiments, vibration supporting layer 24 comprises a single or multi-layer composite film structure of silicon nitride (Si 3N 4), silicon oxide, single crystal silicon, polysilicon, or other suitable supporting material.
In some embodiments, the vibration support layer 24 may include a piezoelectric material layer and electrode material layers located above and below the piezoelectric material layer. The piezoelectric material layer includes one or more layers of zinc oxide, aluminum nitride, an organic piezoelectric film, lead zirconate titanate (PZT), a perovskite-type piezoelectric film, or other suitable materials. In this case, the vibration supporting layer 24 functions as both a support and a piezoelectric.
In some embodiments, the first piezoelectric layer 22 includes zinc oxide, aluminum nitride, an organic piezoelectric film, lead zirconate titanate (PZT), a perovskite-type piezoelectric film, or other suitable material. The first electrode layer 21 and the second electrode layer 23 include a composite film of aluminum, gold, platinum, molybdenum, titanium, chromium, or other suitable materials.
Referring to fig. 2, in some embodiments, the piezoelectric composite vibration layer 20 has a plurality of through holes 25 that continuously penetrate through the vibration supporting layer 24, the first electrode layer 21, the first piezoelectric layer 22, and the second electrode layer 23. In some embodiments, a second groove (not shown in the drawings) is formed on the piezoelectric composite vibration layer 20, the second groove extending from the upper surface of the second electrode layer 23 to the lower surface of the first electrode layer 21, and a plurality of through holes 25 are formed in the second groove such that the plurality of through holes 25 penetrate only the vibration supporting layer 24.
In some embodiments, a dividing line formed by connecting the plurality of through holes 25 passes through the center point of the piezoelectric composite vibration layer 20, and divides the piezoelectric composite vibration layer 20 into a plurality of regions, which are independent of each other, and each independent region constitutes the piezoelectric thin film transducer of the cantilever-like structure. In this case, in the piezoelectric composite vibration layer 20 having the plurality of through holes 25, the edges of each region are only partially connected, so that the stress of the entire piezoelectric composite vibration layer 20 is released. Moreover, the plurality of through holes 25 can release residual stress existing in the deposition process of the piezoelectric composite vibration layer 20, and simultaneously combine with the cantilever-like structure, so that the "tight" piezoelectric composite vibration layer 20 becomes "soft", and each region of the piezoelectric composite vibration layer 20 obtains larger displacement and strain under the same sound pressure effect. It is noted that fig. 2 shows only five through holes 25, but more through holes 25 may be provided per dividing line for better cantilever-like structure.
In the embodiment shown in fig. 2, two dividing lines divide the piezoelectric composite vibration layer 20 into four regions. In some embodiments, the plurality of through holes 25 on at least one dividing line are arranged at equal intervals, so that the stress on the piezoelectric composite vibration layer 20 is distributed more uniformly. In some embodiments, the shape of the plurality of through holes 25 includes circular, elliptical, polygonal, petal-shaped.
In some embodiments, the first electrode layer 21 and the second electrode layer 23 have at least two mutually isolated partitions, and the mutually corresponding partitions of the first electrode layer 21 and the second electrode layer 23 constitute electrode layer pairs, and the plurality of electrode layer pairs are sequentially connected in series. Thus, a plurality of independent cantilever-like structure piezoelectric film transducers are electrically connected in series, thereby further improving the sensitivity of the MEMS structure 100.
Based on the MEMS structure 100 of the above embodiment, the residual stress of the piezoelectric composite vibration layer 20 is reduced, and the deformation of the piezoelectric composite vibration layer 20 under the action of sound pressure is improved, thereby improving the sensitivity of the MEMS structure 100.
Accordingly, referring to fig. 3-10 in combination, there is also provided a method of fabricating a MEMS (microelectromechanical system) structure, comprising:
referring collectively to fig. 3-4 and fig. 10, step S101: a piezoelectric composite vibration layer 20 is deposited on the front surface of the substrate 10.
Step S102: the method of forming the piezoelectric composite vibration layer 20 includes: a vibration supporting layer 24 is deposited on the substrate 10, a first electrode material is deposited on the vibration supporting layer 24, and the first electrode material is patterned to form a first electrode layer 21, and a portion of the vibration supporting layer 24 is exposed.
Referring to fig. 5 and 10, step S103: a piezoelectric material is deposited over the first electrode layer 21 and patterned to form a first piezoelectric layer 22.
Referring to fig. 6 and 10, step S104: a second electrode material is deposited over the first piezoelectric layer 22 and patterned to form a second electrode layer 23.
Referring to fig. 7 and 10, step S105: in some embodiments, the etching forms a plurality of through holes 25 that continuously penetrate the vibration supporting layer 24, the first electrode layer 21, the first piezoelectric layer 22, and the second electrode layer 23. In some embodiments, a second groove (not shown in the drawings) is etched on the piezoelectric composite vibration layer 20, the second groove extending from the upper surface of the second electrode layer 23 to the lower surface of the first electrode layer 21, and a plurality of through holes 25 are formed in the second groove such that the plurality of through holes 25 penetrate only the vibration supporting layer 24.
In some embodiments, a dividing line constituted by connecting the plurality of through holes 25 passes through the center point of the piezoelectric composite vibration layer 20, and divides the piezoelectric composite vibration layer 20 into a plurality of regions. The multiple regions are independent of each other, and each independent region constitutes a piezoelectric thin film transducer of cantilever-like structure.
In some embodiments, the plurality of vias 25 on at least one dividing line are disposed at equal intervals. In some embodiments, the shape of the plurality of through holes 25 includes circular, elliptical, polygonal, petal-shaped.
Step S106: a first groove 12 extending into the substrate 10 is etched on the exposed vibration supporting layer 24 at the periphery of the first electrode layer 21, the first piezoelectric layer 22, and the second electrode layer 23. The piezoelectric composite vibration layer 20 is converted from the solid support state to the similar simple support state, so that the displacement and deformation of the piezoelectric composite vibration layer 20 under the action of sound pressure are improved, and the sensitivity of the MEMS structure is further improved.
Referring to fig. 8-9 and 10, step S107: the back surface of the substrate 10 is etched to form a cavity 11, and a first groove 12 is provided at the periphery of the cavity 11. And, the vibration supporting layer 24, the first electrode layer 21, the first piezoelectric layer 22, and the second electrode layer 23 are formed directly above the cavity 11. The method specifically comprises the following steps: an insulating material and a photoresist are sequentially deposited on the back surface of the substrate 10 by a standard photolithography process, the photoresist is patterned to form a mask layer, and the exposed insulating material and the substrate 10 are etched to form the cavity 11. The insulating material on the back side of the substrate 10 is then removed.
Further, the method for manufacturing the MEMS device further includes etching the first electrode layer 21 and the second electrode layer 23 to form a third recess (not shown in the drawing) respectively, the third recess isolates the first electrode layer 21 and the second electrode layer 23 into at least two partitions, the partitions of the first electrode layer 21 and the second electrode layer 23 corresponding to each other form electrode layer pairs, and then sequentially connecting the plurality of electrode pairs in series, so that the piezoelectric thin film transducers of the plurality of cantilever structures are electrically connected in series, thereby further improving the sensitivity of the MEMS structure.
In summary, by means of the above technical solution of the present application, by adopting the method for manufacturing the MEMS structure, the residual stress of the piezoelectric composite vibration layer 20 is reduced, and the deformation of the piezoelectric composite vibration layer 20 under the action of sound pressure is improved, thereby improving the sensitivity of the MEMS structure.
The foregoing description of the preferred embodiments of the present application is not intended to be limiting, but rather is intended to cover any and all modifications, equivalents, alternatives, and improvements within the spirit and principles of the present application.
Claims (9)
1. A MEMS structure, comprising:
a substrate having a cavity disposed adjacent thereto and a first recess at a periphery of the cavity;
a piezoelectric composite vibration layer formed directly above the cavity and located in the middle of the first groove, wherein the substrate located at a portion between the first groove and the cavity supports the piezoelectric composite vibration layer, wherein a plurality of through holes penetrating the piezoelectric composite vibration layer are distributed on the entire surface of the piezoelectric composite vibration layer;
wherein the shape of the plurality of through holes comprises a circle, an ellipse, a polygon and a petal shape.
2. The MEMS structure of claim 1 wherein the piezoelectric composite vibration layer comprises:
a vibration supporting layer formed over the substrate;
a first electrode layer formed over the vibration supporting layer;
a first piezoelectric layer formed over the first electrode layer;
and a second electrode layer formed over the first piezoelectric layer.
3. The MEMS structure of claim 1, wherein a dividing line connecting the plurality of through holes passes through a center point of the piezoelectric composite vibration layer and divides the piezoelectric composite vibration layer into a plurality of regions.
4. A MEMS structure according to claim 3, wherein the plurality of vias on at least one of the dividing lines are arranged at equal intervals.
5. The MEMS structure of claim 2 wherein the plurality of vias extend continuously through the second electrode layer, the first piezoelectric layer, the first electrode layer, and the vibration supporting layer.
6. The MEMS structure of claim 2, wherein a second recess extends from an upper surface of the second electrode layer to a lower surface of the first electrode layer, and the plurality of through holes are formed within the second recess such that the plurality of through holes extend only through the vibration supporting layer.
7. The MEMS structure of claim 2 wherein the first electrode layer and the second electrode layer have at least two mutually isolated segments, the mutually corresponding segments of the first electrode layer and the second electrode layer forming electrode layer pairs, a plurality of the electrode layer pairs being serially connected in sequence.
8. The MEMS structure of claim 2 wherein the vibration-supporting layer comprises a single-layer or multi-layer composite film structure of silicon nitride, silicon oxide, single crystal silicon, polysilicon.
9. The MEMS structure of claim 2, wherein the vibration-supporting layer comprises a piezoelectric material layer and an electrode material layer located above and below the piezoelectric material layer, wherein the piezoelectric material layer comprises one or more of zinc oxide, aluminum nitride, an organic piezoelectric film, lead zirconate titanate, or a perovskite-type piezoelectric film.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110519679A (en) * | 2019-10-11 | 2019-11-29 | 安徽奥飞声学科技有限公司 | A kind of MEMS structure |
| CN111131986A (en) * | 2019-12-31 | 2020-05-08 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
| CN111131985A (en) * | 2019-12-31 | 2020-05-08 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
| CN111147993A (en) * | 2019-12-31 | 2020-05-12 | 歌尔股份有限公司 | Dustproof structure, microphone packaging structure and electronic equipment |
| CN111246356B (en) * | 2020-04-01 | 2024-11-26 | 安徽奥飞声学科技有限公司 | A MEMS structure and a method for forming the same |
| CN111405441B (en) * | 2020-04-16 | 2021-06-15 | 瑞声声学科技(深圳)有限公司 | Piezoelectric type MEMS microphone |
| CN111787473A (en) * | 2020-06-30 | 2020-10-16 | 歌尔微电子有限公司 | Miniature microphone particle blocker and MEMS microphone |
| CN214154838U (en) * | 2020-11-30 | 2021-09-07 | 瑞声科技（南京）有限公司 | Piezoelectric MEMS microphone |
| CN113490120A (en) * | 2021-07-07 | 2021-10-08 | 瑞声开泰科技(武汉)有限公司 | MEMS loudspeaker |
| CN113438588B (en) * | 2021-07-28 | 2023-04-28 | 成都纤声科技有限公司 | Micro-electromechanical system microphone, earphone and electronic equipment |
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