CN110098552A - Picosecond all-solid-state ultraviolet laser based on gallium oxide crystal - Google Patents
Picosecond all-solid-state ultraviolet laser based on gallium oxide crystal Download PDFInfo
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- CN110098552A CN110098552A CN201910361493.4A CN201910361493A CN110098552A CN 110098552 A CN110098552 A CN 110098552A CN 201910361493 A CN201910361493 A CN 201910361493A CN 110098552 A CN110098552 A CN 110098552A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of picosecond all-solid-state ultraviolet lasers, increase crystal including fundamental frequency light generating apparatus, frequency-doubling crystal and spectrum width, fundamental frequency light generating apparatus is for exporting fundamental frequency light, frequency-doubling crystal is used to the fundamental frequency light carrying out frequency multiplication, frequency doubled light is generated, spectrum width increases crystal using gallium oxide crystal for widening breadth of spectrum line to the frequency doubled light.The present invention can obtain the pulsewidth of 236.5nm and export for the ultraviolet laser of picosecond, have the advantages that high stability and high light beam quality, and compact-sized small and exquisite, be suitable for duplication of production and assembling.
Description
Technical field
The present invention relates to a kind of all-solid-state ultraviolet lasers based on gallium oxide crystal, more particularly to a kind of available picosecond
Picosecond all-solid-state ultraviolet laser based on gallium oxide crystal of pulse.
Background technique
All solid state laser has many advantages, such as that high-efficient, the service life is long and small in size.Also, its relatively other types of laser
Device is easier to obtain the laser of high power and high light beam quality, this make all solid state laser start scientific research, national defence, medical treatment and
The fields such as industry are widely applied.All solid state laser is at coherent optical detection, advanced manufacturing industry, environmental monitoring, material processing and place
Reason, ultrahigh density storage, optic communication, biological detection etc. have important attracting people's attention using the acquirement of picosecond laser technology
Progress, become the reliable tools of industrial microfabrication, these processing are being impossible with other methods before this.
Picosecond laser has the characteristics that picosecond ultrashort pulsewidth, repetition rate are adjustable, pulse energy is high.Picosecond pulse is wide
Degree can compare with the time of electric light relaxation, be sufficiently short to carry out " cold " ablation to material.Picosecond laser compares pulse width
Shorter femtosecond laser also has many advantages, amplifies due to not needing and broadens and compress pulse, and picosecond laser is set
Meter is without so complicated, therefore cost-effectiveness is higher, more reliable performance.Meanwhile picosecond pulse be still sufficiently short to deal with it is very smart
True and stressless microfabrication.
Currently, the exploitation of the ultraviolet solid-state laser based on nonlinear frequency conversion is answered in material processing or spectrum
With.And it is most commonly that four-time harmonic generates the 1064nm laser of Nd:YAG, many years ago just with commercialization.It is used below
250nm wavelength efficiency is higher, using such as manufacture Bragg grating or waveguide.Or the specific wavelength in ultraviolet light is needed to apply
In spectrum of use, hazardous compound is such as detected.And another method is used in the fundamental laser light device to work under lower wavelength, example
Such as the 946nm laser of Nd:YAG.Subsequent four-time harmonic generates the wavelength for leading to 236.5nm, is located at associated point
In the absorption band of son.It applies in improvised explosive devices or core radiation, biological and chemical ingredient etc..
Although diode pumping solid laser reaches its maturity, inevitably there is also many problems.For example, can use
In the frequency-doubling crystal of deep ultraviolet band is single, growth size is small, transfer efficiency is low.Currently, making device due to obtaining femtosecond pulse
The reasons such as design is complicated, higher cost, and performance is unstable are urgently to be resolved.
Summary of the invention
(1) technical problems to be solved
Present invention seek to address that existing solid-state UV laser output power and pulse energy be not high, can not achieve picosecond
(ps) the problem of grade pulse width.
(2) technical solution
In order to solve the above technical problems, the present invention proposes that a kind of picosecond all-solid-state ultraviolet laser, including fundamental frequency light occur
Device, frequency-doubling crystal, the fundamental frequency light generating apparatus for exporting fundamental frequency light, the frequency-doubling crystal be used for by the fundamental frequency light into
Row frequency multiplication generates frequency doubled light, this picosecond of all-solid-state ultraviolet laser further includes that spectrum width increases crystal, is used for the frequency doubled light
Widen breadth of spectrum line.
According to the preferred embodiment of the present invention, it is gallium oxide crystal that the spectrum width, which increases crystal,.
According to the preferred embodiment of the present invention, the gallium oxide crystal length is 10mm-50mm.
According to the preferred embodiment of the present invention, the gallium oxide crystal-cut be the two-sided plating 236.5nm of I type SHG and
236.5nm anti-reflection film, cutting angle θ=57.5 °.
According to the preferred embodiment of the present invention, the fundamental frequency light generating apparatus is Nd:YAG laser.
It according to the preferred embodiment of the present invention, further include polarization spectroscope, the fundamental frequency light is through the polarization spectroscope
After be incident on the frequency-doubling crystal.
According to the preferred embodiment of the present invention, the frequency-doubling crystal is at least one of following crystal: BiBo crystal,
Bbo crystal.
According to the preferred embodiment of the present invention, the frequency-doubling crystal is two, is BiBo crystal and bbo crystal respectively,
The fundamental frequency light is successively through BiBo crystal and bbo crystal frequency multiplication.
According to the preferred embodiment of the present invention, it is provided with plane beam splitter between the BiBo crystal and bbo crystal,
For filtering out longer wavelengths of light.
According to the preferred embodiment of the present invention, the frequency doubled light for widening breadth of spectrum line is exported by prism.
According to the preferred embodiment of the present invention, the prism is CaF2Material.
(3) beneficial effect
For previous solid-state UV laser, the all-solid-state ultraviolet laser of the invention based on gallium oxide crystal
Pulse width obviously broadens, and output power significantly increases, and pulse energy significantly improves, and repetition rate is tunable.Also, the present invention
Have the advantages that design is simple, cost-effectiveness is high, reliable performance compared to femto-second laser.
Detailed description of the invention
Fig. 1 is the optical path knot of the all-solid-state ultraviolet laser based on gallium oxide crystal of a specific embodiment of the invention
Composition.
Specific embodiment
Due to increasing after spectrum width makes pulse become picosecond magnitude, there is output power to become larger, pulse energy improves, repetition can
The advantages such as tuning.β-Ga2O3Forbidden bandwidth is 4.9eV, absorb cut-off side be located at 250nm, ultraviolet permeability up to 80% with
On, and there is good chemical stability and thermal stability.Therefore, the present invention chooses gallium oxide crystal as increase spectrum width
Crystal forms the all-solid-state ultraviolet laser of picosecond (ps) grade pulsewidth.
Generally speaking, ultraviolet laser proposed by the present invention includes fundamental frequency light generating apparatus, frequency-doubling crystal and optical path institute
The optical element needed.Fundamental frequency light generating apparatus exports fundamental frequency light, and the fundamental frequency light is carried out frequency multiplication by frequency-doubling crystal, generates frequency multiplication
Light.Frequency-doubling crystal can be it is multiple, to carry out many times frequency multiplication.In order to carry out the adjusting of polarization state, collimation, Yi Jineng to laser
The input for enough making the light selectivity of multiple frequencies, can be arranged each functional optical member, such as half-wave plate, convex lens in the optical path
Between mirror, reflecting mirror, plane beam splitter, polarization spectro, prism etc..The present invention is not limited to specifically use which kind of functional optical member
Part is also not necessarily limited to its specific quantity.
However, unlike the prior art when, ultraviolet laser of the invention further include have spectrum width increase crystal, be used for
Breadth of spectrum line is widened to the light after the frequency multiplication.As previously mentioned, the present invention proposes to increase crystalline substance as spectrum width using gallium oxide crystal
Body.In order to reach preferable effect, it is of the invention in require gallium oxide crystal (β-Ga2O3) length be 10mm-50mm, be cut into I
The two-sided plating 236.5nm of type SHG and 236.5nm anti-reflection film, cutting angle θ=57.5 °.
Preferably, fundamental frequency light generating apparatus of the invention is Nd:YAG laser.The frequency-doubling crystal is in following crystal
At least one: BiBo crystal, bbo crystal.In the specific implementation, the preferably described frequency-doubling crystal is two, is BiBo respectively
Crystal and bbo crystal, the fundamental frequency light is successively through BiBo crystal and bbo crystal frequency multiplication.It is arranged between BiBo crystal and bbo crystal
There is plane beam splitter, is used to filter out longer wavelengths of light.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
Fig. 1 is the all-solid-state ultraviolet laser based on gallium oxide crystal for the specific embodiment implemented according to the present invention
Light channel structure figure.
As shown in Figure 1, in this embodiment, fundamental frequency light generating apparatus is that the Nd:YAG for the actively Q-switched that pulsewidth is 45nm swashs
Light device 01, average output power 9.2W, peak power 10.2kW, repetition 20kHz.Laser crystal is business Nd:YAG
SCF module (Taranis model, Fibercryst), it is by 50mm long, 1mm diameter, 0.2% doping Nd:YAG, AR coating,
946nm stick is embedded in cooling system, is set in 12 DEG C.
In the embodiment, includes multiple half-wave plates 02,04,10 in optical path, be air-gap zero order wave plate.First half-wave
Piece 02, the second half duration 04 central wavelength be 946nm, plating mould be AR@920-960nm, having a size of 20mm.First half-wave plate
02, the second half duration 04 is set between Nd:YAG laser 01 and the first frequency-doubling crystal 06,10 central wavelength of third half-wave plate
For 473nm, plating mould is AR@450-490nm, having a size of 20mm, be set to the first frequency-doubling crystal 06 and the second frequency-doubling crystal 12 it
Between.Each half-wave plate is mainly used for adjusting the polarization state of laser.Each half-wave plate is air-gap, glued zero-th order waveplates or polymer zero level
Quartz wave-plate.
In addition, being additionally provided with polarization spectroscope (Polarizing between the first half-wave plate 02 and the second half duration 04
Beam Splitter, PBS) 03, it is wideband polarization beam-dividing cube, transmits extinction ratio: Tp:Ts > 1,000:1, transmission effect
Rate: Tp > 90%, reflection efficiency: Rs > 99.5%, coating range are 900-1300nm, mainly export intracavitary light polarization,
Light beam can be divided into the output of two beams.Polarization spectroscope (Polarizing Beam Splitter, PBS) 03 be air-gap or
Glued polarizing beam splitter cube, corresponding wavelength 900-1300nm.
In the embodiment, first frequency-doubling crystal 06 is BiBo crystal (bismuthtriborate, BiB3O6)；Second frequency multiplication
Crystal 12 is bbo crystal (barium metaborate, β-BaB2O4).BiBO crystal length is 10mm, is cut into the two-sided plating 946nm of I type SHG
With 473nm anti-reflection film, cutting angle θ=57.5 °.Crystal is placed in temperature control in 100 DEG C of baking oven, it is high-strength to be limited in
The Nonlinear optical absorption occurred under degree and repetition rate.Bbo crystal length be 7mm, be cut into the two-sided plating 473nm of I type SHG and
236.5nm anti-reflection film, cutting angle θ=57.5 °.Crystal is placed in temperature control in 100 DEG C of baking oven, it is high-strength to be limited in
The Nonlinear optical absorption occurred under degree and repetition rate.
Two plane beam splitters, i.e. the first plane beam splitting are set between the first frequency-doubling crystal 06 and the second frequency-doubling crystal 12
Mirror 07 and the second plane beam splitter 08.It is BK7, synthetic quartz or CaF2It is made, splitting ratio (reflection: penetrating) is 1:1.
In addition, further including having the first convex lens 05 and the second convex lens 11 and reflecting mirror 09 in the optical path of the embodiment.
Laser after frequency multiplication widens spectral line by gallium oxide crystal 13, finally, the laser after frequency multiplication is exported via equilateral prism 14.First
05 focal length of convex lens is 100mm, is coated with 946nm high transmittance film and 473nm highly reflecting films.Second convex lens, 11 focal length is 100mm, plating
There are 473nm high transmittance film and 236.5nm highly reflecting films.Reflecting mirror 09 is coated with 473nm highly reflecting films.
The laser issued as a result, from Nd:YAG laser 01 is by the first half-wave plate 02, polarization spectroscope 03 and the second half
Wave plate 04 is incident on the first convex lens 05, carries out frequency multiplication using the first frequency-doubling crystal BiBO crystal 06, then flat by first
Face beam splitter 07 and the second plane beam splitter 08 screen out feux rouges.Then, by reflecting mirror 09 change optical path direction, then using
Third half-wave plate 10 and the second convex lens 11 are focused the light into using the polarization state of half-wave plate adjustment light by convex lens.Then light
It is incident in the second frequency-doubling crystal (bbo crystal) 12 and carries out frequency multiplication again, be picosecond by 13 output pulse width of gallium oxide crystal
(ps) laser of grade is finally incident in equilateral prism 14, blue light and ultraviolet light separation after prism, to obtain
The ultraviolet laser that 236.5nm pulsewidth is ps grades exports.Wherein, equilateral prism 14 is CaF2Material.
When carrying out laser-related parameters measurement, we measure the light spot shape of its power for exporting laser and formation, this
It is to realize laser pulse of the pulse width at ps grades in solid-state UV laser for the first time.It can with laser provided in this embodiment
To obtain hot spot of the output pulse at 946nm, 473nm, 236.5nm.Pulse is ps grades of pulsewidths, power stability.The present invention adopts
Gallium oxide crystal widens the mechanism of pulsewidth, can increase output power, improve pulse energy and tunable repetition rate.
In conclusion the present invention have good practicability and operability, it is compact-sized it is small and exquisite, be suitable for duplication of production and
Assembling, suitable for mass production, cost is relatively low, laser unidirectionally exports, repetition rate is tunable, the pulse width of ps magnitude, height
The advantages that stability and high light beam quality, can be widely applied to the fields such as national defence, industry, medical treatment, scientific research, has and answers well
With prospect and commercial value.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (10)
1. a kind of picosecond all-solid-state ultraviolet laser, including fundamental frequency light generating apparatus, frequency-doubling crystal, the fundamental frequency light generating apparatus
For exporting fundamental frequency light, the frequency-doubling crystal is used to the fundamental frequency light carrying out frequency multiplication, generates frequency doubled light, it is characterised in that:
This picosecond of all-solid-state ultraviolet laser further includes that spectrum width increases crystal, is used to widen breadth of spectrum line to the frequency doubled light.
2. as described in claim 1 picosecond of all-solid-state ultraviolet laser, it is characterised in that: it is oxidation that the spectrum width, which increases crystal,
Gallium crystal.
3. as claimed in claim 2 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the gallium oxide crystal length is
10mm-50mm。
4. as claimed in claim 3 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the gallium oxide crystal-cut is I
The two-sided plating 236.5nm of type SHG and 236.5nm anti-reflection film, cutting angle θ=57.5 °.
5. according to any one of claims 1 to 4 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the fundamental frequency light
Generating device is Nd:YAG laser.
6. according to any one of claims 1 to 4 picosecond of all-solid-state ultraviolet laser, it is characterised in that: further include polarization
Spectroscope, the fundamental frequency light are incident on the frequency-doubling crystal after the polarization spectroscope.
7. according to any one of claims 1 to 4 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the frequency multiplication is brilliant
Body is at least one of following crystal: BiBo crystal, bbo crystal.
8. as claimed in claim 7 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the frequency-doubling crystal is two, point
It is not BiBo crystal and bbo crystal, the fundamental frequency light is successively through BiBo crystal and bbo crystal frequency multiplication.
9. as claimed in claim 8 picosecond of all-solid-state ultraviolet laser, it is characterised in that: the BiBo crystal and bbo crystal
Between be provided with plane beam splitter, be used to filter out longer wavelengths of light.
10. according to any one of claims 1 to 4 picosecond of all-solid-state ultraviolet laser, it is characterised in that: described to widen spectrum
The frequency doubled light of line width is exported by prism.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910361493.4A CN110098552A (en) | 2019-04-30 | 2019-04-30 | Picosecond all-solid-state ultraviolet laser based on gallium oxide crystal |
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| CN201910361493.4A CN110098552A (en) | 2019-04-30 | 2019-04-30 | Picosecond all-solid-state ultraviolet laser based on gallium oxide crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613958A (en) * | 2020-06-23 | 2020-09-01 | 青岛自贸激光科技有限公司 | Collinear dual-wavelength laser generator |
| CN112577647A (en) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
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| US4253733A (en) * | 1978-05-13 | 1981-03-03 | Uniwersytet Warszawski | Generator of a harmonic of laser light |
| CN1754013A (en) * | 2003-02-24 | 2006-03-29 | 学校法人早稻田大学 | B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
| CN106654850A (en) * | 2015-07-14 | 2017-05-10 | 中国科学院大连化学物理研究所 | Deep UV-visible region wavelength continuously adjustable nanosecond and picosecond pulsed laser |
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2019
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| US4253733A (en) * | 1978-05-13 | 1981-03-03 | Uniwersytet Warszawski | Generator of a harmonic of laser light |
| CN1754013A (en) * | 2003-02-24 | 2006-03-29 | 学校法人早稻田大学 | B-ga2o3 single crystal growing method, thin-film single crystal growing method, ga2o3 light-emitting device, and its manufacturing method |
| CN106654850A (en) * | 2015-07-14 | 2017-05-10 | 中国科学院大连化学物理研究所 | Deep UV-visible region wavelength continuously adjustable nanosecond and picosecond pulsed laser |
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| JUNGANG ZHANG,ET AL.: "growth and characterization of new transparent conductive oxides single crystals ß-Ga2O3:Sn", 《 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613958A (en) * | 2020-06-23 | 2020-09-01 | 青岛自贸激光科技有限公司 | Collinear dual-wavelength laser generator |
| CN112577647A (en) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
| CN112577647B (en) * | 2020-11-26 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | Stress test system and test method for semiconductor laser chip |
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